For Printed Or Integrated Electrical Circuit, Or Semiconductor Device Patents (Class 510/175)
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Patent number: 11149231Abstract: A cleaning liquid containing at least one surfactant (A) selected from the group consisting of a polyoxyalkylene alkyl ether phosphoric acid, a polyoxyalkylene alkyl ether acetic acid and a polyoxyalkylene alkyl ether sulfonic acid and a chelating agent (C), which has a pH of 8 or more, and a cleaning liquid containing an oxidizing agent (B) and a chelating agent (C), which has a pH of 8 or more.Type: GrantFiled: March 31, 2020Date of Patent: October 19, 2021Assignee: Mitsubishi Chemical CorporationInventors: Ken Harada, Yutaro Takeshita, Toshiaki Shibata, Kan Takeshita
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Patent number: 11149235Abstract: A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.Type: GrantFiled: July 18, 2019Date of Patent: October 19, 2021Assignee: Entegris, Inc.Inventors: Daniela White, Elizabeth Thomas, Jun Liu, Michael White, Chao-Yu Wang, Donald Frye
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Patent number: 11127587Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.Type: GrantFiled: February 3, 2015Date of Patent: September 21, 2021Assignee: ENTEGRIS, INC.Inventors: Jun Liu, Elizabeth Thomas, Donald Frye
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Patent number: 11127590Abstract: A method for forming a high-k oxide includes forming a nanofog of Al2O3 nanoparticles and conducting subsequent ALD deposition of a dielectric on the nanofog. A nanofog oxide is adhered to an inert 2D or 3D surface, the nano oxide consisting essentially of sub 1 nm Al2O3 nanoparticles. Additional oxide layers can be formed on the nanofog. Examples are from the group of selected from the group consisting of ZrO2, HfZrO2, silicon or other doped HfO2 or ZrO2, ZrTiO2, HfTiO2, La2O3, Y2O3, Ga2O3, GdGaOx, and alloys thereof, including the ferroelectric phases of HfZrO2, silicon or other doped HfO2 or ZrO2.Type: GrantFiled: December 5, 2017Date of Patent: September 21, 2021Assignee: The Regents of the University of CaliforniaInventors: Iljo Kwak, Kasra Sardashti, Andrew Kummel
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Patent number: 11094526Abstract: A liquid composition for imparting alcohol-repellency to a semiconductor substrate material and a method for treating a semiconductor substrate surface using the liquid composition, are disclosed. The liquid composition contains: a surfactant (A) having a substituent of formula (1) (where n is an integer of 3 to 20), and an anionic hydrophilic group; and a compound (B) being selected from the group consisting of compounds having a polyethylenimine and a substituent of formula (2) or formula (3) (where R1, R2, R3 and R4 are each independently hydrogen or a C1-6 alkyl, alkenyl, alkynyl, or aryl, and X? is a fluoride ion, a chloride ion, a bromide ion, an iodide ion, a fluoroborate ion, a phosphate ion, an acetate ion, a trifluoroacetate ion, a sulfate ion, a hydrogen sulfate ion, a methane sulfate ion, a hydroxide ion, a perchlorate ion, or a nitrate ion).Type: GrantFiled: January 10, 2017Date of Patent: August 17, 2021Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Suguru Haraki, Kenji Shimada
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Patent number: 11085011Abstract: The invention provides a removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device.Type: GrantFiled: July 31, 2019Date of Patent: August 10, 2021Assignee: ENTEGRIS, INC.Inventors: Elizabeth Thomas, Michael White, Daniela White, Atanu Kumar Das
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Patent number: 11075073Abstract: A cleaning chemical composition suitable, for removing a passivation layer from a substrate, wherein the passivation layer comprises residues resulting from etching of said Substrate.Type: GrantFiled: June 29, 2018Date of Patent: July 27, 2021Inventors: Christian Pizzetti, Marine Audouin, Jérôme Daviot, Nicolas Pialot, Philippe Vernin
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Patent number: 11028343Abstract: In one aspect, provided is a cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition having excellent cleaning properties against ceria and being capable of reducing a temporal change in the solubility of ceria. In one aspect, the present disclosure relates to a cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition containing a component A, a component B, a component C, and a component D, the component A being sulfuric acid; the component B being ascorbic acid; the component C being at least one of thiourea and dithiothreitol and the component D being water.Type: GrantFiled: December 22, 2017Date of Patent: June 8, 2021Assignee: KAO CORPORATIONInventors: Daisuke Kayakubo, Jun Naganuma
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Patent number: 11016392Abstract: A solvent consisting essentially of: (A) a first component consisting of N,N-diethylacetamide (DEAC); (B) a second component consisting of 3-methoxy-N, N-dimethyl propionamide (M3DMPA); and (C) an optional third component consisting of one or more glycol ethers or glycol ether acetates; or a solvent consisting essentially of: (1) a first component consisting of one or more acyclic amides of Formula (I): and (2) an optional second component consisting of one or more of DEAC, M3DMPA, N,N-dimethylpropionamide, one or more glycol ethers or glycol ether acetates, and one or more cyclic amides of Formulae (II-IV).Type: GrantFiled: July 6, 2017Date of Patent: May 25, 2021Assignee: Dow Global Technologies LLCInventors: Qi Jiang, Xin Jiang, Hua Ren, Eungkyu Kim, Jianhai Mu, Kaoru Ohba, William J. Harris
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Patent number: 11017995Abstract: Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.Type: GrantFiled: July 19, 2019Date of Patent: May 25, 2021Assignee: Versum Materials US, LLCInventors: Chao-Hsiang Chen, Yi-Chia Lee, Wen Dar Liu, Chung-Yi Chang
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Patent number: 11004675Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.Type: GrantFiled: September 12, 2018Date of Patent: May 11, 2021Assignee: SEMES CO., LTD.Inventors: Hae-Won Choi, Ki-Moon Kang, Kihoon Choi, Anton Koriakin, Chan Young Heo, Jaeseong Lee, Kwon Taek Lim, Yong Hun Kim, Sang Ho Lee
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Patent number: 10988718Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.Type: GrantFiled: March 9, 2017Date of Patent: April 27, 2021Assignee: ENTEGRIS, INC.Inventors: Thomas Parson, Shrane-Ning Jenq, Steven Medd, Daniela White, Michael White, Donald Frye
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Patent number: 10964549Abstract: A wafer is polished by performing a chemical reaction to change a property of a first portion of a material layer on the wafer using a first chemical substance. A first rinse is performed to remove the first chemical substance and retard the chemical reaction. A mechanical polishing process is then performed to remove the first portion of the material layer.Type: GrantFiled: February 25, 2019Date of Patent: March 30, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Shen-Nan Lee, Teng-Chun Tsai, Chu-An Lee, Chen-Hao Wu, Chun-Hung Liao, Huang-Lin Chao
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Patent number: 10954480Abstract: Described herein is an aqueous composition for treating a substrate including patterns having line-space dimensions of 50 nm or below to prevent collapse of the patters, the composition comprising: a solvent system comprising water and a water-miscible organic solvent; a surface modifier that is a reaction product between an alkylamine and an organic acid; and an optional pH adjusting agent.Type: GrantFiled: September 25, 2018Date of Patent: March 23, 2021Assignee: Versum Materials US, LLCInventors: Jhih Kuei Ge, Yi-Chia Lee, Wen Dar Liu, Tianniu Rick Chen
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Patent number: 10947484Abstract: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.Type: GrantFiled: April 9, 2019Date of Patent: March 16, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Atsushi Mizutani, William A. Wojtczak, Yasuo Sugishima
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Patent number: 10884338Abstract: An object of the present invention is to provide a chemical liquid which has excellent defect inhibition performance and hardly breaks a transfer pipe line that a device for manufacturing the chemical liquid includes at the time of manufacturing the chemical liquid. Another object of the present invention is to provide a chemical liquid storage body, a manufacturing method of a chemical liquid, and a manufacturing method of a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent and an ion of at least one kind of atom selected from the group consisting of an Fe atom, a Cr atom, a Ni atom, and a Pb atom, in which in a case where the chemical liquid contains one kind of the ion, a content of the metal ion is 0.1 to 100 mass ppt, in a case where the chemical liquid contains two or more kinds of the ions, a content of each of the metal ions is 0.Type: GrantFiled: March 27, 2019Date of Patent: January 5, 2021Assignee: FUJIFILM CorporationInventor: Tetsuya Kamimura
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Patent number: 10844333Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.Type: GrantFiled: December 20, 2016Date of Patent: November 24, 2020Assignee: BASF SEInventors: Christian Daeschlein, Max Siebert, Michael Lauter, Piotr Przybylski, Julian Proelss, Andreas Klipp, Haci Osman Guevenc, Leonardos Leunissen, Roelf-Peter Baumann, Te Yu Wei
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Patent number: 10844335Abstract: Disclosed is a post-chemical-mechanical-polishing cleaning composition, which is capable of effectively removing impurities from the surface of a wafer substrate after chemical mechanical polishing and also of preventing the corrosion of metal line materials, and which includes choline hydroxide, tetrabutylammonium hydroxide, 1,2,4-triazole, 2-hydroxypyridine, and the remainder of ultrapure water.Type: GrantFiled: March 6, 2018Date of Patent: November 24, 2020Assignee: YOUNG CHANG CHEMICAL CO., LTDInventors: Seung Hun Lee, Seung Hyun Lee, Seong Hwan Kim
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Patent number: 10829722Abstract: Disclosed herein are multi-component, azeotrope-like compositions containing trans-dichloroethylene, 1,1,1,3,3-pentafluorobutane, and 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether. These compositions also form an azeotrope-like mixture with methanol. These compositions are useful as solvents in refrigeration flushing, oxygen system cleaning, foam blowing, and cleaning operations such as cold cleaning, vapor degreasing, and aerosol cleaners.Type: GrantFiled: December 21, 2017Date of Patent: November 10, 2020Assignee: ENVIRO TECH INTERNATIONAL, INC.Inventors: Richard J. DeGroot, Karl Loepke, Andrew Mavec
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Patent number: 10804111Abstract: A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin.Type: GrantFiled: September 15, 2016Date of Patent: October 13, 2020Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Keisuke Hashimoto, Yasunobu Someya, Takahiro Kishioka, Rikimaru Sakamoto
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Patent number: 10787628Abstract: The present disclosure is directed to non-corrosive cleaning compositions that are useful, e.g., for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.Type: GrantFiled: August 21, 2018Date of Patent: September 29, 2020Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Thomas Dory, Emil A. Kneer, Tetsuya Kamimura
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Patent number: 10790187Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.Type: GrantFiled: January 17, 2018Date of Patent: September 29, 2020Assignee: ENTEGRIS, INC.Inventors: Emanuel I. Cooper, Makonnen Payne, WonLae Kim, Eric Hong, Sheng-Hung Tu, Chieh Ju Wang, Chia-Jung Hsu
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Patent number: 10741409Abstract: A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.Type: GrantFiled: October 2, 2017Date of Patent: August 11, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Hyo Jung Kim, Ye Hwan Kim, Ki Hoon Jang, Byoung Ho Kwon, Bo Un Yoon
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Patent number: 10731109Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.Type: GrantFiled: April 11, 2018Date of Patent: August 4, 2020Assignee: ENTEGRIS, INC.Inventors: Donald Frye, Jun Liu, Daniela White, Michael White
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Patent number: 10711227Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.Type: GrantFiled: January 9, 2018Date of Patent: July 14, 2020Assignee: VERSUM MATERIALS US, LLCInventors: Wen Dar Liu, Yi-Chia Lee, William Jack Casteel, Jr., Tianniu Chen, Rajiv Krishan Agarwal, Madhukar Bhaskara Rao
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Patent number: 10696933Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 5) at least one quaternary ammonium hydroxide; and 6) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: October 22, 2019Date of Patent: June 30, 2020Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
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Patent number: 10676668Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.Type: GrantFiled: December 14, 2018Date of Patent: June 9, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Neng-Jye Yang, Kuo Bin Huang, Ming-Hsi Yeh, Shun Wu Lin, Yu-Wen Wang, Jian-Jou Lian, Shih Min Chang
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Patent number: 10651028Abstract: According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.Type: GrantFiled: October 2, 2015Date of Patent: May 12, 2020Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Toshiyuki Oie, Kenji Shimada
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Patent number: 10626353Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, water soluble sulfones, and water soluble ethers; 3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and 4) water.Type: GrantFiled: February 7, 2018Date of Patent: April 21, 2020Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Emil A. Kneer, Yasuo Sugishima
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Patent number: 10619126Abstract: The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.Type: GrantFiled: July 14, 2016Date of Patent: April 14, 2020Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Yasuo Sugishima, Keeyoung Park, Thomas Dory
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Patent number: 10590262Abstract: The present invention relates to novel surfactant mixtures comprising at least one compound A whose dynamic surface tension ?dyn. at a use concentration of 0.1% by weight and a bubble lifetime of 100 ms is <45 mN/m, and at least one compound B whose static surface tension ystat measured at a use concentration of 0.1% by weight is less than or equal to the static surface tension Ystat of compound A, to the use thereof as additives, for example in preparations for surface coating, such as paints, lacquers, protective coatings and special coatings in electronic or in optical applications. At least one compound in the novel surfactant mixture is a fluorosurfactant.Type: GrantFiled: July 26, 2013Date of Patent: March 17, 2020Assignee: Merck Patent GmbHInventors: Joerg Pahnke, Gerhard Jonschker, Steffen Schellenberger, Mathias Kaiser
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Patent number: 10577567Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.Type: GrantFiled: November 22, 2017Date of Patent: March 3, 2020Assignee: Entegris, Inc.Inventors: Makonnen Payne, Emanuel I. Cooper, WonLae Kim, Eric Hong, Sean Kim
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Patent number: 10533146Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.Type: GrantFiled: October 5, 2017Date of Patent: January 14, 2020Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Keeyoung Park, Emil A. Kneer, Thomas Dory, Tomonori Takahashi
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Patent number: 10501710Abstract: A cleaner composition consisting essentially of (A) 90.0-99.9 wt % of an organic solvent and (B) 0.1-10.0 wt % of a C3-C6 alcohol, and containing (C) 20-300 ppm of sodium and/or potassium is effective for cleaning a surface of a silicon semiconductor substrate. A satisfactory degree of cleanness is achieved within a short time and at a high efficiency without causing corrosion to the substrate.Type: GrantFiled: April 18, 2017Date of Patent: December 10, 2019Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masaya Ueno, Hideyoshi Yanagisawa
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Patent number: 10468243Abstract: In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.Type: GrantFiled: February 28, 2018Date of Patent: November 5, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Chung-Chieh Lee
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Patent number: 10468250Abstract: A rinse solution includes a surfactant and deionized water. The surfactant includes a compound having a branched structure, the compound having a branched structure including a hydrophobic group-containing main chain and a plurality of side chains that are branched from the main chain and have at least one hydrophilic functional group. A method of fabricating an integrated circuit device includes forming a photoresist pattern, followed by applying the rinse solution onto the photoresist pattern.Type: GrantFiled: October 28, 2016Date of Patent: November 5, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Ju-young Kim, Jeong-ju Park, Jin Park, Hai-sub Na
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Patent number: 10428271Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.Type: GrantFiled: August 28, 2014Date of Patent: October 1, 2019Assignee: Entegris, Inc.Inventors: Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Chia-Jung Hsu, Sheng-hung Tu, Chieh Ju Wang
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Patent number: 10400167Abstract: A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.Type: GrantFiled: November 21, 2016Date of Patent: September 3, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Wen Dar Liu, Yi-Chia Lee, Tianniu Chen, Thomas Mebrahtu, Aiping Wu, Edward Chia Kai Tseng, Gene Everad Parris
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Patent number: 10332914Abstract: A method of manufacturing an electronic device and an electronic device are disclosed. The manufacturing method including: forming a carbon nanotube electrode pattern on a substrate; placing the substrate on which the electron pattern is formed in a first oxidizing solution, to first dope the carbon nanotubes forming the electrode pattern; and spraying the electrode using a second oxidizing solution to second dope the carbon nanotubes forming the electrode pattern.Type: GrantFiled: June 17, 2015Date of Patent: June 25, 2019Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Jiuxia Yang, Feng Bai, Jiantao Liu
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Patent number: 10301581Abstract: Liquid cleaning compositions for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device, which comprise hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphonic acid at 0.0001-0.05% by mass, a compound having a group 13 element at 0.00005-0.5% by mass, and water.Type: GrantFiled: October 4, 2016Date of Patent: May 28, 2019Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Kimihiro Aoyama, Nobuo Tajima
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Patent number: 10260027Abstract: The invention provides a substrate detergent composition used for cleaning a surface of a substrate, comprising: (A) A quaternary ammonium salt: 0.1 to 2.0% by mass; (B) Water: 0.1 to 4.0% by mass; and (C) An organic solvent: 94.0 to 99.8% by mass. There can be provided a substrate detergent composition used for cleaning a surface of a substrate contaminated with a silicone component whose water contact angle is 100° or more.Type: GrantFiled: January 25, 2017Date of Patent: April 16, 2019Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masaya Ueno, Hideyoshi Yanagisawa
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Patent number: 10253282Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: December 21, 2016Date of Patent: April 9, 2019Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
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Patent number: 10199210Abstract: Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer.Type: GrantFiled: May 12, 2016Date of Patent: February 5, 2019Assignee: FUJIFILM CorporationInventors: Tetsuya Kamimura, Yasuo Sugishima, Atsushi Mizutani
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Patent number: 10196588Abstract: The objective of the present invention is in the field of cleaning agent in particular detergents. In particular, it relates to a novel detergent formulation for an automatic dishwashing. The formulation provides excellent cleaning and finishing; it is environmentally friendlier than traditional compositions and allows for a more energy efficient automatic dishwashing process.Type: GrantFiled: May 2, 2013Date of Patent: February 5, 2019Assignee: UNIVERSITI PUTRA MALAYSIAInventors: Raja Noor Zaliha Raja Abdul Rahman, Abu Bakar Salleh, Mahiran Basri, Izuddin Abdul Rahman
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Patent number: 10155921Abstract: The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.Type: GrantFiled: October 9, 2014Date of Patent: December 18, 2018Assignees: E I DUPONT NE NEMOURS AND COMPANY, EKC TECHNOLOGY INC.Inventor: Hua Cui
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Patent number: 10138117Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.Type: GrantFiled: July 31, 2014Date of Patent: November 27, 2018Assignee: Entegris, Inc.Inventors: Li-Min Chen, Steven Lippy, Daniela White, Emanuel I. Cooper
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Patent number: 10113141Abstract: An object of the present invention is to provide a good cleaning liquid for semiconductor device which is used after a CMP step, and the present invention relates to a cleaning liquid for semiconductor device containing the following components (1) to (5) or (1)? to (4)?: (1) an inorganic alkali; (2) a chelating agent; (3) an anionic surfactant selected from sulfonic acid type and sulfuric acid type anionic surfactants; (4) an amine oxide type surfactant; and (5) water, or (1)? an inorganic alkali; (2)? a carboxyl group-containing chelating agent; (3)? an anionic surfactant selected from a benzenesulfonic acid substituted with an alkyl group having from 8 to 20 carbon atoms and a salt thereof; and (4)? water.Type: GrantFiled: August 18, 2014Date of Patent: October 30, 2018Assignee: MITSUBISHI CHEMICAL CORPORATIONInventors: Ken Harada, Atsushi Ito, Toshiyuki Suzuki
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Patent number: 10100272Abstract: The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.Type: GrantFiled: July 17, 2015Date of Patent: October 16, 2018Assignee: Cabot Microelectronics CorporationInventors: Roman Ivanov, Cheng-yuan Ko, Fred Sun
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Patent number: 10073351Abstract: A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.Type: GrantFiled: December 9, 2015Date of Patent: September 11, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Rajiv Krishan Agarwal, Mark Richard Brown, Aiping Wu, David Barry Rennie, Yi-Chia Lee, Gene Everad Parris
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Patent number: 10032623Abstract: A cleaning method including a persulphuric acid producing step of causing a cleaning sulfuric acid solution to travel into an electrolyzing section and to circulate therethrough to produce persulphuric acid having a predetermined concentration by electrolysis in the electrolyzing section, a solution mixing step of mixing the sulfuric acid solution containing the persulphuric acid produced in the persulphuric acid producing step with a halide solution containing one or more types of halide ion without causing the solutions to travel into the electrolyzing section to produce a mixed solution having a post-mixture concentration of oxidant including the persulphuric acid that ranges from 0.001 to 2 mol/L, a heating step of heating the mixed solution, and a cleaning step of cleaning a semiconductor substrate by transporting the heated mixed solution to cause the heated mixed solution to come into contact with the semiconductor substrate.Type: GrantFiled: August 19, 2013Date of Patent: July 24, 2018Assignee: KURITA WATER INDUSTRIES LTD.Inventors: Yuichi Ogawa, Haruyoshi Yamakawa