For Printed Or Integrated Electrical Circuit, Or Semiconductor Device Patents (Class 510/175)
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Patent number: 9976111Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.Type: GrantFiled: April 26, 2016Date of Patent: May 22, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Wen Dar Liu, Yi-Chia Lee, William Jack Casteel, Jr., Tianniu Chen, Rajiv Krishan Agarwal, Madhukar Bhaskara Rao
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Patent number: 9972485Abstract: A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl? or Br?, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.Type: GrantFiled: December 22, 2015Date of Patent: May 15, 2018Inventor: Hua Cui
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Patent number: 9951302Abstract: According to the invention, the compositions and methods provide for the complete removal of synthetic glues or adhesives from a plurality of surfaces through the use of amide solvents in combination with surfactants, chelants, acidulants and/or additional bottle wash additives. Beneficially, the compositions and methods are suitable for use at lower temperatures, including below 35° C., and lower pH conditions, including from 5 to 10, from 6 to 9, and from 6 to 8, in comparison to conventional caustic-based adhesive removal compositions.Type: GrantFiled: October 12, 2016Date of Patent: April 24, 2018Assignee: ECOLAB USA INC.Inventors: Clinton Hunt, Jr., Kim R. Solomon, Ralf Krack
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Patent number: 9921481Abstract: The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern.Type: GrantFiled: February 26, 2014Date of Patent: March 20, 2018Assignee: AZ Electronic Materials (Luxembourg) S.à r.l.Inventors: Kazuma Yamamoto, Yoshihiro Miyamoto, Takashi Sekito, Tatsuro Nagahara
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Patent number: 9914902Abstract: This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant.Type: GrantFiled: December 28, 2015Date of Patent: March 13, 2018Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Bing Du, Thomas Dory, William A. Wojtczak
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Patent number: 9873856Abstract: An aerosolized HVAC/R system solvent for decontaminating HVAC/R components and line sets The solvent contains 25-90 wt % propellant, and 10-75 wt % solvent mixture which is about 60-95 wt % trans-1,2, dichloroethylene, about 5-20 wt % n-propanol, and an inerting constituent providing a weight percent ratio of the inerting constituent to n-propanol of less than 1.5. The solvent is packaged in a container that is connected to the HVAC/R components or line sets to be decontaminated for supplying the solvent mixture under pressure to the HVAC/R components or line sets.Type: GrantFiled: May 20, 2016Date of Patent: January 23, 2018Assignee: MAINSTREAM ENGINEERING CORPORATIONInventor: Ted J. Amundsen
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Patent number: 9873857Abstract: Provided is a cleaning composition, including, from about 0.01 weight % to about 10.0 weight % of a chelating agent, from about 0.01 weight to about 3.0 weight % of an organic acid containing a carboxyl group, from about 0.01 weight % to about 2.0 weight % of an inorganic acid, from about 1.0 weight % to about 15.0 weight % of an amine and water in an amount sufficient to bring the total weight of the cleaning composition to 100 weight %.Type: GrantFiled: December 17, 2015Date of Patent: January 23, 2018Assignees: SAMSUNG DISPLAY CO., LTD., LTCAM CO., LTD.Inventors: Dongeon Lee, Jinho Ju, Junhyuk Woo, Seokho Lee
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Patent number: 9687840Abstract: The invention includes compositions comprising curable imidazolium-functionalized poly(room-temperature ionic liquid) copolymers and homopolymers. The invention further includes methods of preparing and using the compositions of the invention. The invention further includes novel methods of preparing thin, supported, room-temperature ionic liquid-containing polymeric films on a porous support. In certain embodiments, the methods of the invention avoid the use of a gutter layer, which greatly reduces the overall gas permeance and selectivity of the composite membrane. In other embodiments, the films of the invention have increased gas selectivity and permeance over films prepared using methods described in the prior art.Type: GrantFiled: July 9, 2013Date of Patent: June 27, 2017Assignee: The Regents of the University of Colorado, a body corporateInventors: Douglas Gin, Trevor Carlisle, Richard Noble, Garret Nicodemus, William McDanel, Matthew Cowan
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Patent number: 9670137Abstract: New stabilizers for solutions of choline hydroxide and related quaternary trialkylalkanolamines are disclosed. The stabilizers are alkyl hydroxylamines, hydrazines, hydrazides, or derivates thereof, including compounds containing more than one such functionality. The new stabilizers are effective at concentrations less than about 1000 ppm, and choline hydroxide solutions stabilized with the compounds described herein typically have Gardner Color change less than about 2.0 after six months at reasonable temperatures.Type: GrantFiled: April 8, 2013Date of Patent: June 6, 2017Assignee: Huntsman Petrochemical LLCInventor: Dave C Ferguson
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Patent number: 9669354Abstract: A method for collecting carbon dioxide from flue gas of a power plant. The method includes: 1) mixing an organic amine, an ionic liquid, and water to obtain an aqueous solution of a composite absorbent; 2) spraying the aqueous solution of the composite absorbent into the flue gas to allow the flue gas flowing upwardly to fully contact with the downwardly sprayed aqueous solution of the composite absorbent and to allow CO2 in the flue gas to react with the composite absorbent to yield a solution rich in A.CO2 and B.CO2, where A represents the organic amine and B represents the ionic liquid; allowing the solution rich in A.CO2 and B.CO2 to stand and clarify to form different liquid layers; 3) thermally decomposing the mixed solution rich in A.CO2 and B.CO2 after heat exchange to release the chemically bound CO2.Type: GrantFiled: June 23, 2014Date of Patent: June 6, 2017Assignee: WUHAN KAIDI GENERAL RESEARCH INSTITUTE OF ENGINEERING & TECHNOLOGY CO., LTD.Inventors: Zhilong Wang, Yanfeng Zhang
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Patent number: 9593297Abstract: Compositions for removing residues from a semiconductor structure. The compositions comprise water, a base, a polydentate chelator, a degasser, and a fluorine source. The compositions comprise greater than or equal to approximately 99 wt % of the water and are formulated to exhibit a pH of from approximately 10.0 to approximately 12.0. Methods of forming and using the compositions are also disclosed.Type: GrantFiled: October 15, 2014Date of Patent: March 14, 2017Assignee: MICRON TECHNOLOGY, INC.Inventors: Cole S. Franklin, Jerome A. Imonigie
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Patent number: 9562211Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: December 3, 2014Date of Patent: February 7, 2017Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
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Patent number: 9535330Abstract: A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.Type: GrantFiled: October 30, 2012Date of Patent: January 3, 2017Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Yuriko Shirai, Naohisa Ueno, Takuya Ohhashi
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Patent number: 9528030Abstract: The invention provides a chemical-mechanical polishing composition that contains (a) abrasive particles, (b) an azole compound having an octanol-water log P of about 1 to about 2, (c) a cobalt corrosion inhibitor, wherein the cobalt corrosion inhibitor comprises an anionic head group and a C8-C14 aliphatic tail group, (d) a cobalt accelerator, (e) an oxidizing agent that oxidizes cobalt, and (f) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.Type: GrantFiled: October 21, 2015Date of Patent: December 27, 2016Assignee: Cabot Microelectronics CorporationInventors: Steven Kraft, Phillip W. Carter, Jason Seabold
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Patent number: 9494867Abstract: Disclosed are a rinse solution for lithography comprising water and a nonionic surfactant represented by the formula (I) (R1 and R2 may be the same as or different from each other and represent a hydrogen atom or a methyl group, R3 and R4 may be the same as or different from each other and represent a hydrogen atom, a methyl group or an ethyl group, R5 represents a hydrocarbon group having 2 to 5 carbon atoms, in which one or more of a double bond or triple bond are contained, or a phenylene group, and R6 and R7 may be the same as or different from each other and represent a hydrogen atom or a methyl group) and a method for forming a resist pattern by rinsing the resist pattern obtained by exposing and developing a photosensitive resist with the rinse solution for lithography described above.Type: GrantFiled: May 1, 2014Date of Patent: November 15, 2016Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.Inventors: Yuriko Matsuura, Sara Tsuyuki, Go Noya
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Patent number: 9490142Abstract: This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.Type: GrantFiled: April 9, 2015Date of Patent: November 8, 2016Assignee: Qualsig Inc.Inventors: Jiali Wu, Kellsie Shan
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Patent number: 9476016Abstract: A method of cleaning a mount substrate comprising the step of: preparing a cleaning solution and cleaning the mount substrate by using the cleaning solution. The cleaning solution is a chemical solution produced by providing organic amine as a content in a hydrocarbon-based solvent containing a ketone or an aromatic and by adding unsaturated carboxylic acid anhydride or carboxylic anhydride to this solvent.Type: GrantFiled: January 29, 2015Date of Patent: October 25, 2016Assignee: Mitsubishi Electric CorporationInventors: Yoshiyuki Kamo, Masaru Kinugawa
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Patent number: 9472420Abstract: Aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing titanium nitride (TiN or TiNxOy) etch residue.Type: GrantFiled: November 19, 2014Date of Patent: October 18, 2016Assignee: Air Products and Chemicals, Inc.Inventors: William Jack Casteel, Jr., Seiji Inaoka, Madhukar Bhaskara Rao, Brenda Faye Ross, Yi-Chia Lee, Wen Dar Liu, Tianniu Chen
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Patent number: 9458415Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR1) or thiocarbonyl (>C?S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (—OH) groups and does not comprise any carboxylic acid (—COOH) or carboxylate (—COO—) groups, and (C) an aqueous medium.Type: GrantFiled: January 24, 2013Date of Patent: October 4, 2016Assignee: BASF SEInventors: Yuzhuo Li, Shyam Sundar Venkataraman, Mingjie Zhong
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Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
Patent number: 9422513Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.Type: GrantFiled: December 2, 2014Date of Patent: August 23, 2016Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, David W. Minsek -
Patent number: 9375883Abstract: In a method for reconditioning data carriers having a plastic part, a reconditioning fluid is applied in a liquid phase to the data carrier, wherein the reconditioning fluid includes at least one solvent and at least one plasticizer, wherein the solvent is selected in such a way that it is substantially inert compared to the data carrier, wherein a non-volatile plasticizer is selected and the concentration of the plasticizer in the reconditioning fluid is selected such that the gradient of the change in volume of the data carrier owing to the replacement of plasticizer with the reconditioning fluid is positive.Type: GrantFiled: December 23, 2011Date of Patent: June 28, 2016Assignee: ÖSTERREICHISCHE AKADEMIE DER WISSENSCHAFTENInventors: Nadja Wallaszkovits, Peter Liepert, Lidija Spoljaric-Lukacic
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Patent number: 9360761Abstract: The present invention relates to a photoresist stripping composition for all process of manufacturing LCD, more specifically to a water-borne united photoresist stripping composition, as a weak basic composite comprising a tertiary alkanolamine, water, and an organic solvent. The composition according to the present invention prevents a corrosion of Al and Cu metal wiring in process of manufacturing LCD, has a good capability of removing photoresist, and is applied to all Al process, Cu process, an organic film process, and COA process.Type: GrantFiled: August 19, 2010Date of Patent: June 7, 2016Assignee: LTC Co., Ltd.Inventor: Ho Sung Choi
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Patent number: 9328318Abstract: A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.Type: GrantFiled: March 3, 2014Date of Patent: May 3, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Dnyanesh Chandrakant Tamboli, Rajkumar Ramamurthi, David Barry Rennie, Madhukar Bhaskara Rao, Gautam Banerjee, Gene Everad Parris
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Patent number: 9291910Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.Type: GrantFiled: September 27, 2013Date of Patent: March 22, 2016Assignee: Dynaloy, LLCInventors: Richard Dalton Peters, Travis W. Acra, Yuanmei Cao, Nichelle Maria Gilbert, Michael Tod Phenis, Kimberly Dona Pollard, Joshua Cummins, Meng Guo, Donald James Pfettscher
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Patent number: 9275851Abstract: Aqueous, nitrogen-free cleaning composition, preparation and use thereof are provided. The composition having a pH of from 5 to 8 comprises (A) an amphiphilic nonionic, water-soluble or water-dispersible surfactant and (B) a metal chelating agent selected from polycarboxylic acids having at least 3 carboxylic acid groups. The composition is used for removing residues and contaminants from semiconductor substrates.Type: GrantFiled: February 28, 2012Date of Patent: March 1, 2016Assignee: BASF SEInventors: Andreas Klipp, Vijay Immanuel Raman, Shyam Sundar Venkataraman, Raimund Mellies, Mingjie Zhong
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Patent number: 9256128Abstract: A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom. The anti-reflective layers are removed using a fluid.Type: GrantFiled: September 18, 2014Date of Patent: February 9, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Chang, Chen-Yu Liu
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Patent number: 9257270Abstract: A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl? or Br?, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.Type: GrantFiled: February 12, 2013Date of Patent: February 9, 2016Inventor: Hua Cui
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Patent number: 9212340Abstract: The present disclosure relates to a dimethyl sulfoxide composition suitable for cleaning polymer residue found on the devices used for processing plastic materials, in particular polyurethane.Type: GrantFiled: October 4, 2011Date of Patent: December 15, 2015Assignee: ARKEMA FRANCEInventors: Mélanie Vauthrin, Bernard Monguillon, Paul Guillaume Schmitt
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Patent number: 9190376Abstract: The present invention relates generally to and more particularly, to a method of fabricating a pillar interconnect structure with non-wettable sidewalls and the resulting structure. More specifically, the present invention may include exposing only the sidewalls of a pillar to an organic material that reacts with metal of the pillar to form an organo-metallic layer on sidewalls of the pillar. The organo-metallic layer may prevent solder from wetting on the sidewalls of the pillar during subsequent bonding/reflow processes.Type: GrantFiled: May 15, 2014Date of Patent: November 17, 2015Assignee: International Business Machines CorporationInventors: Charles L. Arvin, Brian M. Erwin, Eric D. Perfecto, Wolfgang Sauter, Thomas A. Wassick
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Patent number: 9176388Abstract: Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature, the first feature and the second feature being separated at a first distance. A rinse material is applied to the polymer layer including the first feature and the second feature. The rinse material is removed from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other. A third feature is formed based on the first feature and the second feature being in contact with each other.Type: GrantFiled: November 5, 2013Date of Patent: November 3, 2015Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chun-Liang Tai, Bi-Ming Yen, Chun-Hung Lee, De-Fang Chen
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Patent number: 9179551Abstract: The present invention provides a method for producing a printed-wiring board in a semi-additive process, comprising the steps of: providing a chemical copper plating 4 on an insulation layer 3 or forming a copper thin film on the insulation layer 3 using a sputtering method; subjecting the obtained copper surface 4 to a roughening treatment using an etching solution containing 0.1 to 3% by mass of hydrogen peroxide, 0.3 to 5% by mass of sulfuric acid, 0.1 to 3 ppm of halogen ion and 0.003 to 0.3% by mass of tetrazoles; attaching a dry film resist 5 to the copper surface 4 after the roughening treatment to perform exposure and development and providing an electrolytic copper plating 7 to an opening 6 after the exposure; and subjecting the remaining dry film resist to a stripping treatment using a resist stripping liquid containing 0.5 to 20% by mass of monoethanolamine, 0.2 to 10% by mass of quaternary ammonium hydroxide, 0.01 to 10% by mass of ethylene glycols and 0.01 to 0.5% by mass of azoles.Type: GrantFiled: July 16, 2014Date of Patent: November 3, 2015Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Kenichi Takahashi, Kazuhiko Ikeda
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Patent number: 9171715Abstract: Atomic layer deposition processes for forming germanium oxide thin films are provided. In some embodiments the ALD processes can include the following: contacting the substrate with a vapor phase tetravalent Ge precursor such that at most a molecular monolayer of the Ge precursor is formed on the substrate surface; removing excess Ge precursor and reaction by products, if any; contacting the substrate with a vapor phase oxygen precursor that reacts with the Ge precursor on the substrate surface; removing excess oxygen precursor and any gaseous by-products, and repeating the contacting and removing steps until a germanium oxide thin film of the desired thickness has been formed.Type: GrantFiled: March 13, 2013Date of Patent: October 27, 2015Assignee: ASM IP HOLDING B.V.Inventor: Raija H. Matero
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Patent number: 9165760Abstract: A cleaning composition is provided. The cleaning composition includes at least one polyamino-polycarboxylic acid or at least one salt thereof, at least one solvent, at least one substituted or non-substituted phenethylamine and water. The solvent is selected from a group consisting of glycols.Type: GrantFiled: October 16, 2013Date of Patent: October 20, 2015Assignee: UWIZ Technology Co., Ltd.Inventors: Yu-Chi Fu, Wen-Tsai Tsai, Ming-Hui Lu, Song-Yuan Chang
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Patent number: 9159558Abstract: Methods are disclosed for reducing the number of defects in a directed self-assembled structure formed on a guiding pre-pattern (e.g., a chemical pre-pattern) on a substrate. A first layer comprising a first self-assembly material is applied onto the guiding pre-pattern, with the first self-assembly material forming domains whose alignment and orientation are directed by the guiding pre-pattern; as a result, a first self-assembled structure is formed. The first self-assembled structure is washed away, and a second layer comprising a second self-assembly material is then applied. The second self-assembly material forms a second self-assembled structure having fewer defects than the first self-assembled structure.Type: GrantFiled: March 15, 2013Date of Patent: October 13, 2015Assignee: International Business Machines CorporationInventors: Joy Cheng, Daniel P. Sanders, Melia Tjio
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Patent number: 9146471Abstract: A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50° C. of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to <0.5% of a quaternary ammonium hydroxide, and (C) <5% by weight of water; method for its preparation, a method for manufacturing electrical devices and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.Type: GrantFiled: April 20, 2010Date of Patent: September 29, 2015Assignee: BASF SEInventor: Andreas Klipp
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Patent number: 9074170Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: GrantFiled: October 20, 2009Date of Patent: July 7, 2015Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey A. Barnes, Brian Benac, Karl E. Boggs, Lin Feng, Jun Liu, Melissa A. Petruska, Xiaodong Yan, Peng Zhang
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Patent number: 9068153Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.Type: GrantFiled: September 29, 2010Date of Patent: June 30, 2015Assignee: FUJIFILM CorporationInventors: Tomonori Takahashi, Kazutaka Takahashi, Atsushi Mizutani, Hiroyuki Seki, Hideo Fushimi, Tomoo Kato
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Patent number: 9069259Abstract: Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, a secondary solvent, and less than about 3 wt. % water. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.Type: GrantFiled: February 5, 2013Date of Patent: June 30, 2015Assignee: Dynaloy, LLCInventors: Michael Phenis, Laurl Johnson, Raymond Chan, Diane Scheele, Kimberly Pollard
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Patent number: 9063431Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.Type: GrantFiled: July 15, 2011Date of Patent: June 23, 2015Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey A. Barnes, Steven Lippy, Peng Zhang, Rekha Rajaram
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Patent number: 9057953Abstract: A thinner composition for a reduced resist coating process includes an alkyl lactate, cyclohexanone, and an alkyl acetate, wherein an alkyl substituent of the alkyl acetate is a C1 to C5 non-ether based alkyl group.Type: GrantFiled: August 30, 2012Date of Patent: June 16, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyo-jin Yun, Sung-gun Shin, Hyo-sun Lee, Byung-uk Kim, Hyun-woo Kim, Suk-il Yoon, Oh-hwan Kweon
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Patent number: 9058975Abstract: Presented is a cleaning solution according to one embodiment of the present invention that includes a corrosion inhibitor, a solubilizing agent, an oxygen scavenger, and a complexing agent also capable as a pH adjustor. Another embodiment of the present invention includes cleaning solutions that include a pH adjustor, an optional complexing agent, and a corrosion inhibitor. The cleaning solutions may have a solubilizing agent optionally present, may have a surfactant optionally present, and may have a dielectric etchant optionally present.Type: GrantFiled: September 7, 2008Date of Patent: June 16, 2015Assignee: Lam Research CorporationInventors: Artur Kolics, Fritz Redeker
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Publication number: 20150147836Abstract: The disclosure provides a cleaning agent composition for a flat panel display device, including: polyaminocarboxylic acid; alkali base; a nonionic surfactant; and a fluoride component. The cleaning agent composition for the flat panel display device can effectively remove metal oxides and organic contaminants on the substrate without impairing a transparent conductive layer.Type: ApplicationFiled: July 15, 2014Publication date: May 28, 2015Inventors: In-Bae Kim, Jong-Hyun Choung, Young Min Moon, Hong Sick Park, Hyeon Jeong Sang, Jae Woo Jeong, Min Hee Kim, Young Jin Park, Sang-Moon Yun, Sang Dai Lee, Hyun Cheol Jeong
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Publication number: 20150144160Abstract: The present invention provides an etchant which is a reaction product of sulfuric acid and ammonium persulfate, wherein the concentration of the ammonium persulfate is 1˜25%, the concentration of the sulfuric acid is 98%. The etchant is produced by adding the ammonium persulfate into the sulfuric acid at a temperature of 100 to 200 degree Celsius. According to the present invention, the ammonium persulfate substitute the conventional oxidizing agent of hydrogen peroxide. Since the ammonium persulfate is in a powder form, the operation becomes more convenient. Furthermore, since sulfuric acid is formed as a by-product instead of water, the etchant will not be diluted after being used for many times, which reduces the production cost.Type: ApplicationFiled: March 27, 2013Publication date: May 28, 2015Inventors: Sally Ann Henry, Jintao Huang, Jia Ma, Yi Wu, Yujia Su
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Publication number: 20150136728Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.Type: ApplicationFiled: April 29, 2014Publication date: May 21, 2015Applicants: Samsung Display Co., Ltd., Cowon Innotech Inc.Inventors: Bong-Yeon Kim, Jin-Ho Ju, Jun-Hyuk Woo, Jung-Hwan Song, Seok-Ho Lee, Seong-Sik Jeon, Jong-Su Han
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Publication number: 20150140820Abstract: A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.Type: ApplicationFiled: April 26, 2013Publication date: May 21, 2015Applicant: WAKO PURE CHEMICAL INDUSTRIES, LTD.Inventors: Hiromi Kawada, Hironori Mizuta, Tsuneaki Maesawa
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Patent number: 9034810Abstract: The present invention is directed to provide a semiconductor surface treating agent; composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used.Type: GrantFiled: September 1, 2010Date of Patent: May 19, 2015Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Hironori Mizuta, Takuhiro Kimura
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Publication number: 20150133356Abstract: A process for cleaning a semi-conductor wafer comprising providing etched wafer containing metal pillars, contacting the etched wafer with a cleaning solution, removing the wafer from the cleaning solution, wherein the resulting wafer is substantially free of post etch residues and photoresist residues without etching the metal pillars by the cleaning solution, the cleaning solution comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; and E. an organic base comprising an amine compound. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.Type: ApplicationFiled: January 21, 2015Publication date: May 14, 2015Applicant: Dynaloy, LLCInventors: Kimberly Dona Pollard, Donald James Pfettscher, Meagan Hatfield, Spencer Erich Hochstetler, Nichelle Maria Gilbert, Michael Tod Phenis
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Patent number: 9029308Abstract: A chemical composition for cleaning a medium is provided. For some embodiments, the chemical composition comprises a nonionic surfactant, an inorganic salt, a glycol compound, a chelating agent, and deionized water. For example, the chemical composition may comprise between about 1% and 5% of nonionic surfactant, between about 2% and 6% by weight of an inorganic salt, between about 5% and 10% by weight of a glycol compound, between about 5% and 10% by weight of a chelating agent, and deionized water.Type: GrantFiled: March 28, 2012Date of Patent: May 12, 2015Assignee: WD Media, LLCInventors: Soh Kian Koo, Kok Kin Yap, EE Boon Quah
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Publication number: 20150114429Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.Type: ApplicationFiled: May 17, 2013Publication date: April 30, 2015Applicants: ATMI Taiwan Co., Ltd., Advanced Technology Materials, Inc.Inventors: Shrane Ning Jenq, Karl E. Boggs, Jun Liu, Nicole Thomas
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Publication number: 20150118839Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).Type: ApplicationFiled: October 24, 2014Publication date: April 30, 2015Inventors: Robert L. Bruce, Sebastian U. Engelmann, Eric A. Joseph, Mahmoud Khojasteh, Masahiro Nakamura, Satyavolu S. Papa Rao, Bang N. To, George G. Totir, Yu Zhu