Abstract: In one form, a memory controller includes a command queue, an arbiter, a refresh logic circuit, and a final arbiter. The command queue receives and stores memory access requests for a memory. The arbiter selectively picks accesses from the command queue according to a first type of accesses and a second type of accesses. The first type of accesses and the second type of accesses correspond to different page statuses of corresponding memory accesses in the memory. The refresh logic circuit generates a refresh command to a bank of the memory and provides a priority indicator with the refresh command whose value is set according to a number of pending refreshes. The final arbiter selectively orders the refresh command with respect to memory access requests of the first type accesses and the second type accesses based on the priority indicator.

Abstract: A multi-tenant storage system can store clear text data and associated clear text checksum received from a storage tenant using their associated cryptographic key (“cryptokey”). When the clear text data is compressible, cryptographic data (“cryptodata”) is generated from a concatenation of the clear text checksum and compressed clear text data using the cryptokey. A cryptographic checksum (“cryptochecksum”) is generated from the cryptodata. When the clear text data is uncompressible, cryptographic data (“cryptodata”) is generated by encrypting the clear text data using the cryptokey with an extra verification step to make sure the clear text checksum can be rebuilt during the read request. A cryptographic checksum (“cryptochecksum”) is generated from the cryptodata. The cryptodata and associated cryptochecksum are stored in the multi-tenant storage system, so that repairs to damaged cryptodata can be made using the associated cryptochecksum.

Abstract: An apparatus includes a plurality of memory devices and a control circuit. The control circuit may be configured to operate with the memory devices having a first data width in a first mode and with the memory devices having a second data width in a second mode. The control circuit may be configured to implement two differential data strobe input/output circuits. The differential data strobe input/output circuits each may have driver and termination control inputs that are independently programmable. The differential data strobe input/output circuits may be configured to be connected in parallel when the control circuit is operating in the second mode.

Abstract: A semiconductor device includes a synthesis control signal generation circuit and a data output control circuit. The synthesis control signal generation circuit generates a synthesis control signal for determining a burst sequence from a latch control signal in response to a first burst mode command and a second burst mode command. The data output control circuit outputs data included in a bank group as internal data in response to the synthesis control signal.

Abstract: Embodiments include receiving configuration information including a match criterion for packets received at a network device in a network and a pool of layer 3 addresses associated with a set of servers in the network, resolving layer 2 destination addresses based on the layer 3 addresses of the servers, and programming a hardware layer of the network device based, at least in part, on the match criterion, the pool of layer 3 addresses, and the layer 2 destination addresses. Specific embodiments include configuring a policy to indicate that packets from an external source are to be forwarded to a server of the set of servers. Further embodiments include receiving a packet at the network device, and matching the packet to the pool of layer 3 addresses and the resolved layer 2 addresses based, at least in part, on the match criterion programmed in the hardware layer.

Abstract: A data storage device includes a nonvolatile memory device including a plurality of memory blocks; and a device controller configured to control the nonvolatile memory device such that, when a first refresh scan command is received from a host device, a first refresh scan operation for the plurality of memory blocks is performed and then a first refresh scan result for the first refresh scan operation is transmitted to the host device, and when a first refresh operation command is received from the host device, a first refresh operation for the nonvolatile memory device is performed.

Abstract: A semiconductor system may include a host, a memory controller and a memory apparatus. The host may generate a mirror request when a program requiring a mirroring operation is executed. The memory controller may generate mirror information based on the mirror request. The memory apparatus may dynamically perform the mirroring operation based on the mirror information.

Abstract: A dedupe module is provided. The dedupe module includes: a host interface; a dedupe engine to receive a data request from a host system via the host interface; a memory controller; a plurality of memory modules, each memory module being coupled to the memory controller; and a read cache for caching data from the memory controller for use by the dedupe engine.

Abstract: A data processing system includes a processing unit that forms a base die and has a group of through-silicon vias (TSVs), and is connected to a memory system. The memory system includes a die stack that includes a first die and a second die. The first die has a first surface that includes a group of micro-bump landing pads and a group of TSV landing pads. The group of micro-bump landing pads are connected to the group of TSVs of the processing unit using a corresponding group of micro-bumps. The first die has a group of memory die TSVs. The subsequent die has a first surface that includes a group of micro-bump landing pads and a group of TSV landing pads connected to the group of TSVs of the first die. The first die communicates with the processing unit using first cycle timing, and with the subsequent die using second cycle timing.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for memory array addressing. An addressing circuit is configured to receive an address for an operation on an array of multiple memory regions. An address includes a row address and a column address both multiplexed into the address and received with an activate command for an operation. A row buffer for an array of multiple memory regions is configured to store data identified by multiplexed row and column addresses from the multiple memory regions. Data of an operation is selected from a row buffer based on a second address received with a subsequent command for the operation.

Abstract: A technique forms storage containers within a group of storage devices. The technique involves partitioning each storage device of the group of storage devices into slices having a same storage size. The technique further involves creating, from the slices having the same storage size, first extents having a first extent width and second extents having a second extent width. The first extent width is different from the second extent width. The technique further involves provisioning (i) at least one first extent from the first extents having the first extent width to form a first storage container within the group of storage devices and (ii) at least one second extent from the second extents having the second extent width to form a second storage container within the group of storage devices. The first storage container and the second storage container share at least one storage device.

Abstract: An embodiment of an extensible memory hub may include one or more upstream interface ports to couple the extensible memory hub to the controller, one or more downstream interface ports to couple the extensible memory hub to one or more of the nonvolatile memory and another extensible memory hub, and a clock circuit to provide a first clock signal at a first frequency to the one or more upstream interface ports and a second clock signal at a second frequency to the one or more downstream interface ports, where the first frequency may be different from the second frequency. Other embodiments are disclosed and claimed.

Abstract: A storage apparatus accessed by using a memory bus is disclosed. The apparatus includes an interface controller, a storage module, a storage controller, a command register, a status register, and a buffer. In addition, the interface controller can be electrically connected to a memory module interface of a computer system. The interface controller receives an access command for accessing the storage module sent by a CPU. The interface controller writes the access command into the command register, and records a current access status or result by using the status register. The storage controller performs status setting on the status register according to the access command in the command register, and performs a corresponding read/write operation on the storage module.

Abstract: An apparatus for enqueuing kernels on a device-side is introduced to incorporate with at least a MXU (Memory Access Unit) and a CSP (Command Stream Processor): The CSP, after receiving a first command from the MXU, executes commands of a ring buffer, thereby enabling an EU (Execution Unit) to direct the MXU to allocate space of the ring buffer for a first hardware thread and subsequently write second commands of the first hardware thread into the allocated space of the ring buffer according to an instruction of a kernel.

Abstract: A multi-die memory device having fixed bandwidth interfaces can selectively connect portions of the interfaces of the multiple memory dies as a memory channel for the multi-die device. The selective application of the interface bits of the memory dies enables the application of ECC (error checking and correction) in memory devices that otherwise have insufficient connectors to exchange ECC information. The device includes circuitry to selectively apply CAS (column address select) signals to the memory dies to selectively connect the connectors of the memory dies. CAS selection can provide various configurations in which selected bits of a first memory die interface are combined with selected bit or bits of a second memory die interface to provide the device interface. The memory dies can operate in byte mode to apply only half of their data I/O (input/output) interface, with CAS doubled up to provide access to the memory arrays.

Abstract: A method and system for a DRAM having a first bank that includes a first sub-array (SA) and a second SA. The first SA includes a first storage unit coupled to a first row-buffer in a first sub-channel (FSC) and a second storage unit in a second sub-channel (SSC). The second SA includes a third storage unit and a fourth storage unit coupled to a second row-buffer. The first SA is associated with a first row address (RA) and the FSC is associated with a first column address (CA) stored in the FSC. The second SA is associated with a second RA and the SSC is associated with a second CA stored in the SSC. The first and second CAs are used to select portions of data from the first and second row-buffers, respectively, for output to a data bus.

Abstract: A method of coordinating memory commands in a high-bandwidth memory HBM+ system, the method including sending a host memory controller command from a host memory controller to a memory, receiving the host memory controller command at a coordinating memory controller, forwarding the host memory controller command from the coordinating memory controller to the memory, and scheduling, by the coordinating memory controller, a coordinating memory controller command based on the host memory controller command.

Abstract: A processor memory is stress tested with a variable list insertion depth using list insertion test segments with non-naturally aligned data boundaries. List insertion test segments are interspersed into test code of a processor memory tests to change the list insertion depth without changing results of the test code. The list insertion test segments are the same structure as the segments of the test code and have non-naturally aligned boundaries. The list insertion test segments include list insertion segments and load/store segments. The list insertion segments locate a current memory location using a fixed segment at a known location. The load/store segments load and store list elements in memory.

Abstract: There are provided a memory system and a method for operating the same. A memory system includes: a semiconductor memory device for outputting a ready/busy (R/B) signal by performing an internal operation in response to an operation command, and outputting status data by performing a status check operation in response to a status check command; and a controller for outputting the operation command and the status check command to the semiconductor memory device, and determining validity of the status data, based on the R/B signal.

Abstract: Disclosed embodiments relate to automatically providing updates to at least one vehicle. Operations may include receiving, at a server remote from the at least one vehicle, Electronic Control Unit (ECU) activity data from the at least one vehicle, the ECU activity data corresponding to actual operation of the ECU in the at least one vehicle; determining, at the server and based on the ECU activity data, a software vulnerability affecting the at least one vehicle, the software vulnerability being determined based on a deviation between the received ECU activity data and expected ECU activity data; identifying, at the server, an ECU software update based on the determined software vulnerability; and sending, from the server, a delta file configured to update software on the ECU with a software update corresponding to the identified ECU software update.

Abstract: A semiconductor memory apparatus may include a write data polarity change unit and a read data polarity change unit. The write data polarity change unit may invert a first data based on a write signal and a first bank address signal, and generate a write polarity change data. The read data polarity change unit may invert data outputted from a memory bank based on a read signal and the first bank address signal, and generate a read polarity change data.

Abstract: A temperature associated with the memory component is determined. A frequency to perform an operation on a memory cell associated with the memory component is determined based on the temperature associated with the memory component. The operation is performed on the memory cell at the determined frequency to transition the memory cell from a state associated with an increased error rate for data stored at the memory cell to another state associated with a decreased error rate for the data stored at the memory cell.

Abstract: The system, devices, and methods disclosed herein relate to online data expansion in disaster recovery enabled data storage systems. We disclose embodiments that allow storage devices, which are coupled to one another in a disaster recovery, data replication-type scenario, to perform storage expansion in most cases without having to disable remote replication during the expansion. The teachings of this patent application facilitate methods of expansion for data storage device pairings where the data storage devices are the same size or where the primary storage device is smaller than the secondary storage device. In both of these situations, expansion occurs without disabling disaster recovery. In the situation where the secondary storage device is larger than the primary device, expansion is allowed, with the caveat that disaster recovery must be disabled briefly.

Abstract: A method and apparatus of wear leveling control for storage class memory are disclosed. According to the present invention, whether current data to be written to a nonvolatile memory corresponds to a write cache hit is determined. If the current data to be written corresponds to the write cache hit, the current data are written to a write cache as well as to a designated location in the nonvolatile memory different from a destined location in the nonvolatile memory. If the current data to be written corresponds to a write cache miss, the current data are written to the destined location in the nonvolatile memory. If the current data to be written corresponds to the write cache miss and the write cache is not full, the current data is also written to the write cache. In another embodiment, the wear leveling control technique also includes address rotation process to achieve long-term wear leveling as well.

Abstract: The present disclosure provides a dynamic random access memory (DRAM), and a method of operating the same. The DRAM includes a memory row and a buffer. The memory row is configured to store a data, wherein the memory row does not provide the data to the buffer in response to a request to read the data. The buffer is configured to store the data as a temporarily-stored data, wherein the buffer provides the temporarily-stored data in response to the request.

Abstract: The present disclosure relates to an extensible memory hub. An apparatus may include a first extensible non-volatile memory (NVM) hub (EN hub). The first EN hub includes an upstream interface port configured to couple the first EN hub to an NVM controller or to a second EN hub; a downstream interface port configured to couple the first EN hub to a third EN hub or to a NVM device; at least one NVM device port, each NVM device port configured to couple the first EN hub to a respective NVM device via a NVM channel; and an EN hub controller. The EN hub controller includes command logic configured to initialize the first EN hub in response to an initialize chain command from the NVM controller, the initializing including enumerating each NVM device coupled to the first EN hub and each of one or more associated NVM dies.

Abstract: A memory system capable of being connected to a host, includes a non-volatile memory that includes a plurality of non-volatile memory dies, and a controller that is electrically connected to the non-volatile memory. The controller is configured to manage the plurality of non-volatile memory dies as a plurality of die sets, each die set including two or more of the non-volatile memory dies to which priorities are assigned respectively, select one die set from the plurality of die sets based on an identifier received from the host, and select, based on the assigned priorities, a non-volatile memory die from the selected die set as a writing destination die of write data received from the host.

Abstract: An apparatus includes a plurality of termination points and a clock mesh network. The termination points may be configured to send/receive timing signals. Each of the termination points may comprise an inductor. The clock mesh network may be configured to provide a path to transmit the timing signals from a clock source to a plurality of components and implement a condition using the inductors. The inductors for each of the termination points may be implemented to meet the condition. Values for the inductors may be determined based on characteristics of the clock mesh network. The condition may prevent power loss.

Abstract: A three-dimensional stacked (3DS) memory module includes multiple memory chips physically integrated with a data I/O chip. The data I/O chip includes multiple data interfaces and multiple respectively corresponding data buffers. A memory controller routes data traffic through all available data interfaces for maximum bandwidth. In some circumstances, the memory controller directs the data I/O chip to de-activate one or more of the data interfaces (for example, to reduce power consumption). All subsequent data traffic to and from the memory module is routed through the remaining active interfaces. All physical addresses in the 3DS memory module are addressable through the remaining active interfaces. In some circumstances, the memory controller directs the data I/O chip to re-activate some or all of the de-activated data interfaces. Once re-activated, subsequent data traffic to and from the memory module can again be routed through all active interfaces.

Abstract: The present disclosure relates to power systems. The teachings thereof may be embodied in power electronic systems. For example, a power electronic system for operating a load may comprise: a number of power modules connected to the load, each comprising at least one switching element and a local actuator; a superordinate controller for actuating the power modules; a device bus connected to the superordinate controller via which the control signals for actuating the power modules are transmitted; the superordinate controller transmitting the control signals in respective messages at predefined intervals of time; wherein all power modules scan a first communication edge of a received message and process it as a common time base of the system.

Abstract: A device and method dynamically optimize processing of a storage command within a storage system. The device and method execute a rule based on predetermined criteria and internal operation parameters of the storage system. An extended application program interface within the storage system provides internal operation parameters for use in execution of the rule. Based on execution of the rule, the storage system optimizes processing of the storage command.

Abstract: A control device, including: a first processor; a second processor which has a higher performance than the first processor; and a storage in which data is stored so as to be readable and writable by the second processor, wherein a part of the storage is usable as a common storage area which is readable and writable by the first processor and the second processor, in reading operation, the second processor reads first data from out of the common storage area in the storage and writes the first data to the common storage area, and the first processor reads the first data from the common storage area, and in writing operation, the first processor writes second data to the common storage area, and the second processor stores the second data out of the common storage area in the storage.

Abstract: Systems and methods are disclosed for wear-based access optimization. An apparatus may comprise a circuit configured to perform a data access operation at a target location of a memory, and determine a wear value of the target location. The circuit may compare the wear value to global wear value of other locations of the drive, and adjust data access parameters for the target location based on the comparison.

Abstract: A system includes at least one end-node, at least one edge node, and an edge cloud video headend. The at least one end node generally implements a first stage of a multi-stage hierarchical analytics and caching technique. The at least one edge node generally implements a second stage of the multi-stage hierarchical analytics and caching technique. The edge cloud video headend generally implements a third stage of the multi-stage hierarchical analytics and caching technique.

Abstract: A semiconductor memory device having a flexible refresh skip area includes a memory cell array including a plurality of rows to store data, a row decoder connected to the memory cell array, a refresh area storage unit to store a beginning address and an end address of a memory area that is to be refreshed in which the memory area that is to be refreshed does not include a refresh skip area having a size is selectively and/or adaptively changed, and a refresh control circuit connected to the row decoder and the refresh area storage unit. The refresh control circuit controls a refresh operation for the area that is to be refreshed and not for the refresh skip area.

Abstract: A semiconductor system may be configured to classify failure groups of data including erroneous bits and may replace a memory area in which the failure groups are stored with a redundancy area. The replacement of the memory area in which the failure groups are stored, with the redundancy area, may be performed according to priorities of the failure groups.

Abstract: In one embodiment, a cached memory device can include: (i) a memory array coupled to a system address bus and an internal data bus; (ii) a plurality of data buffers coupled to a system data bus, and to the memory array via the internal data bus; (iii) a plurality of valid bits, where each valid bit corresponds to one of the data buffers; (iv) a plurality of buffer address registers coupled to the system address bus, where each buffer address register corresponds to one of the data buffers; and (v) a plurality of compare circuits coupled to the system address bus, where each compare circuit corresponds to one of the data buffers.

Abstract: A processing device includes a first memory interface for accessing a first memory device of a main memory. Each first memory interface is compatible with Low-Power Double-Data-Rate (LPDDR) signaling. The processing device further includes a second memory interface, which has different signaling characteristics from the first memory interface, for accessing a second memory device of the main memory. The second memory device has an access latency higher than the first memory device and lower than a secondary storage device. The first memory device and the second memory device may be used as a dual memory or a two-tiered memory.

Abstract: In one embodiment, a memory device includes a clock receiver to receive a clock signal and a plurality of mode registers to store parameter information associated with a plurality of operating clock frequencies of the clock signal. The plurality of clock frequencies include a first clock frequency and a second clock frequency. The memory device also includes a command interface to receive commands synchronously with respect to the clock signal. The command interface receives a command that instructs the DRAM device to change operation from the first clock frequency to the second clock frequency.

Abstract: A memory system includes a storage device and a host device. The storage device includes a memory device and a device controller. The device controller is configured to store device information. The device information includes a level of a power supply voltage required for the memory device. The host device includes a host controller and a power management integrated circuit (PMIC). The host device is configured to send a query command to receive the device information from the device controller during a power setting period. The PMIC is configured to supply a first level of power supply voltage to the memory device during the power setting period and, after the power setting period, selectively supply one of the first level of power supply voltage and a second level of power supply voltage to the memory device. The first level of power supply voltage is lower than the second level of power supply voltage.

Abstract: An example system includes a memory controller; a memory bus coupled to the memory controller; and a dual inline memory module (DIMM) coupled to the memory controller through the memory bus. The DIMM includes a dynamic random access memory (DRAM) portion; a storage portion; and a gate array portion coupled to the memory bus to detect memory access signals and to store information related to the memory access signals on the storage portion.

Abstract: A USB-style data-transfer device employs volatile memory that is connected to an onboard power-storage device for data storage. Through this design, any data stored on the memory can be physically cleared by interrupting the supply of electrical power from the onboard power-storage device to the memory. Enhanced security relative to conventional USB flash devices is provided by the volatile memory-based USB-style data-transfer device as the memory can be physically cleared without being plugged into a computer system either automatically when the onboard power storage device runs out of electrical power to supply to the volatile memory, or by user initiation through either a programmed instruction to interrupt the supply of electric power after a set time period or the operation of a manual switch which interrupts the supply of electric power.

Abstract: A built-in self-test (BIST) circuit and a method of operating BIST circuit is disclosed. The BIST circuit is configured to generate a test pattern based on a plurality of test parameters and perform a test on at least one memory core. The method includes setting a sweep range including a sweep start point of a first test parameter and a sweep end point thereof; generating a first test pattern corresponding to each sweep point of the sweep range from the sweep start point of the first test parameter and the sweep end point thereof and providing the first test pattern to the at least one memory core; receiving output data corresponding to the first test pattern from the at least one memory core and comparing the output data and a predetermined reference data; and generating first test result information based on results of the comparing.

Abstract: Systems for page management using local page information are disclosed. The system may include a processor, including a memory controller, and a memory, including a row buffer. The memory controller may include circuitry to determine that a page stored in the row buffer has been idle for a time exceeding a predetermined threshold determine whether the page is exempt from idle page closures, and, based on a determination that the page is exempt, refrain from closing the page. Associated methods are also disclosed.

Abstract: There is described a storage controller, the storage controller having an array of entries, each entry associated with a partition of one or more partitions, wherein the controller comprises logic configured to identify a partition identifier of an entry and apply a policy to the entry based on or in response to the partition identifier.

Abstract: A bank interleaving controller may include a power calculator and a write driver. The power calculator may calculate a total power consumption by adding a power consumption of one or more memory banks that are performing write operations and an amount of power that is expected to be additionally consumed to write input data. The write driver may write the input data to a memory cell corresponding to an input address when the total power consumption is equal to or less than a reference power consumption.

Abstract: According to one embodiment, a memory system includes a memory and a memory controller. The memory includes a first buffer and a memory cell array. The memory controller includes a second buffer for receiving first data from a host. The memory controller transfers the first data to the first buffer without accumulating a predetermined size of the first data in the second buffer. The memory controller creates second data in the first buffer and programs the second data created in the first buffer into the memory cell array. The second data is formed of a plurality of third data. The third data is first data received from the memory controller by the memory. The size of the second data is equal to a size of a unit in which to program into the memory cell array.

Abstract: A technology is described for determining an idle page close timeout for a row buffer. An example memory controller may comprise a scoreboard buffer and a predictive timeout engine. The scoreboard buffer may be configured to store a number of page hits and a number of page misses for a plurality of candidate timeout values for an idle page close timeout. The predictive timeout engine may be configured to increment the page hits and the page misses in the scoreboard buffer according to estimated page hit results and page miss results for the candidate timeout values, and identify a candidate timeout value from the scoreboard buffer estimated to maximize the number of page hits to the number of page misses.

Abstract: System address reconstruction logic in accordance with one embodiment of the present description, reconstructs a system address from a channel address translated from the system address. The system address reconstruction logic includes logic configured to reconstruct one or more systems address fields as a function of the channel address, the number of memory controller target ways of the memory being equal to three, the number of bits of the granularity of interleaving of data among the memory controller target ways, the number of channels per memory controller target way, and the number of bits of the granularity of interleaving of data among the channels of a memory controller target way. Other aspects are described herein.

Abstract: A memory module includes a memory interface circuit and a training signal generator. The memory interface circuit includes a plurality of terminals for communicating with a memory controller, and the terminals comprise at least a plurality of data terminals. The training signal generator is coupled to the memory interface circuit, and is arranged for generating a training signal to the memory controller through only a portion of the data terminals or a specific terminal instead of the data terminals when the memory module receives a training request from the memory controller.