Abstract: A semiconductor memory system may include a read data manager configured to store data read from a memory device, a likelihood value mapper configured to map likelihood values to the data output from the data manager and output mapping data, and a decoder configured to perform low density parity check decoding on the mapping data by using a parity check matrix. The parity check matrix may be a k*N×M matrix including k*N×M submatrices, where k, N and M are independently an integer equal to or greater than 2.

Abstract: A storage apparatus is provided. The controller of the storage apparatus includes an error correction module and a data disordering module. The error correction module is configured to perform an error correction procedure for a data packet to be written into a flash memory module of the storage apparatus for generating sequence data codes containing the data packet and corresponding error correcting codes, wherein the data packet includes a data area recording data to be written and a spare area recording data related to the data packet. The data disordering module is configured to convert the sequence data codes into non-sequence data codes, wherein the data of the data area and the spare area and error correcting codes are dispersed in the non-sequence data codes. Accordingly, it is possible to effectively increase the safety of the data packet.

Abstract: Methods, apparatus, systems, and data structures may operate to combine block management data with a portion of data, to generate error correction data for the combined portion, and to store the data, the block management data, the error correction data for the combined portion, and error correction data for the data in a memory. Additional embodiments may operate to generate or store error correction data for each of a plurality of sectors of a page except for a particular sector in the page and combine block management data with the particular sector to generate a modified sector. Additional embodiments may operate to generate or store error correction data for the modified sector and combine the plurality of sectors, the error correction data for each of the plurality of sectors other than the particular page, and the block management data and the error correction data for the modified sector.

Abstract: Systems, methods, apparatus, and techniques are provided for writing data to a storage medium. A stripe of the storage medium is interfaced via one or more data transfer channels, where the stripe comprises a plurality of pages of the storage medium. A data stream is received and the data stream is portioned into a plurality of allocation units (AUs), where each AU in the plurality of AUs has a pre-determined byte length. A first portion of a selected AU from the plurality of AUs is written to a first page of the plurality of pages and a second portion of the selected AU is written to a second page of the plurality of pages by consecutively writing bytes of the selected AU from a starting byte on the first page to an ending byte on the second page.

Abstract: The present disclosure includes apparatuses and methods for physical page, logical page, and codeword correspondence. A number of methods include error coding a number of logical pages of data as a number of codewords and writing the number of codewords to a number of physical pages of memory. The number of logical pages of data can be different than the number of physical pages of memory.

Abstract: Systems, methods, apparatus, and techniques are provided for processing data from a storage medium. A stripe of data stored on the storage medium is read, where the stripe comprises a plurality of data allocation units (AUs) and a parity AU. Error correction decoding is applied to each of the plurality of data AUs to produce a plurality of decoded data AUs. It is determined whether a value of the parity AU is satisfied by values of bytes in the plurality of decoded data AUs. The plurality of decoded data AUs are output in response to a determination that the value of the parity AU is satisfied by the values of bytes in the plurality of decoded data AUs.

Abstract: A method includes, after data is stored at a data area of a memory device and error correction code (ECC) data corresponding to the data is stored at an ECC area corresponding to the data area, detecting a triggering condition. In response to detecting the triggering condition, the method also includes storing second ECC data in the ECC area, where the second ECC data includes redundant information for a first portion of the data area and storing third ECC data at the memory device. The third ECC data includes redundant information for a second portion of the data area.

Abstract: According to one embodiment, a semiconductor storage device includes a nonvolatile semiconductor memory and a controller. The nonvolatile semiconductor memory includes a firmware area capable of storing firmware used to execute either a normal mode or an autorun test mode and a user area capable of storing user data. The controller reads the firmware from the nonvolatile semiconductor memory and determines whether the firmware has been set in either the normal mode or the autorun test mode. The controller repeats erasing, writing, and reading in each block in the user area using a cell applied voltage higher than a voltage used in a normal mode, and enters a block where an error has occurred as a bad block.

Abstract: A system and method are provided for data recovery in a multi-level cell memory device. One or more bits may be programmed sequentially in one or more respective levels of multi-level cells in the memory device. An interruption of programming a subsequent bit in a subsequent second or greater level of the multi-level cells may be detected. Data may be recovered from the multi-level cells defining the one or more bits programmed preceding the programming interruption of the second or greater level.

Abstract: Some embodiments include apparatuses and methods having first memory cells, a first access line configured to access the first memory cells, second memory cells, and a second access line configured to access the second memory cells. One of such apparatuses can include a controller configured to cause data to be stored in a memory portion of the first memory cells, to cause a first portion of an error correction code associated with the data to be stored in another memory portion of the first memory cells, and to cause a second portion of the error correction code to be stored in the second memory cells. Other embodiments including additional apparatuses and methods are described.

Abstract: A system, computer readable medium and a method of operating a non volatile memory (NVM) array that comprises multiple NVM cells, the method comprises: receiving input data to be written to the non volatile memory; performing constraint coding on the input data to provide encoded data; wherein the constraint coding prevents the encoded data from comprising forbidden combinations of values; wherein the forbidden combinations of values are defined based on expected inter-cell coupling induced errors resulting from coupling between NVM cells; and writing the encoded data to the non volatile memory.

Abstract: A method and system to improve the performance and/or reliability of a solid-state drive (SSD). In one embodiment of the invention, the SSD has logic compress a block of data to be stored in the SSD. If it is not possible to compress the block of data below the threshold, the SSD stores the block of data without any compression. If it is possible to compress the block of data below the threshold, the SSD compresses the block of data and stores the compressed data in the SSD. In one embodiment of the invention, the SSD has logic to dynamically adjust or select the strength of the error correcting code of the data that is stored in the SSD. In another embodiment of the invention, the SSD has logic to provide intra-page XOR protection of the data in the page.

Abstract: A processor or other apparatus of an aspect may include a first cache, a first error correction code (ECC) logic for the first cache, a second cache, and a second ECC logic for the second cache. The apparatus may also include an interconnect coupled with or between the first cache and the second cache. The interconnect is operable to transmit data and also check bits corresponding to the data between the first cache and the second cache. A method of an aspect may include accessing data, and check bits corresponding to the data, from a first cache. The data and the check bits may be transmitted over an interconnect from the first cache to a second cache. The data and the check bits may be stored in the second cache. Other methods, apparatus, and systems are also disclosed.

Abstract: A portion of a nonvolatile memory array that is likely to contain, partially programmed data may be identified from a high sensitivity read, by applying stricter than usual ECC requirements, or using pointers to programmed sectors. The last programmed data may be treated as likely to be partially programmed data. Data in the identified portion may be copied to another location, or left where it is with an indicator to prohibit further programming to the same cells. To avoid compromising previously stored data during subsequent programming, previously stored data may be backed up. Backing up may be done selectively, for example, only for nonsequential data, or only when the previously stored data contains an earlier version of data being programmed. If a backup copy already exists, another backup copy is not created. Sequential commands are treated as a single command if received within a predetermined time period.

Abstract: An apparatus, system, and method are disclosed for managing data in a solid-state storage device. A solid-state storage and solid-state controller are included. The solid-state storage controller includes a write data pipeline and a read data pipeline The write data pipeline includes a packetizer and an ECC generator. The packetizer receives a data segment and creates one or more data packets sized for the solid-state storage. The ECC generator generates one or more error-correcting codes (“ECC”) for the data packets received from the packetizer. The read data pipeline includes an ECC correction module, a depacketizer, and an alignment module. The ECC correction module reads a data packet from solid-state storage, determines if a data error exists using corresponding ECC and corrects errors. The depacketizer checks and removes one or more packet headers. The alignment module removes unwanted data, and re-formats the data as data segments of an object.

Abstract: A channel has a first and a second end. The first end of the channel is coupled to a transmitter. The channel is capable of transmitting symbols selected from a symbol set from the first end to the second end. The channel exhibits incomplete error introduction properties. A code comprises a set of code words. The elements of the set of code words are one or more code symbols long. The code symbols are members of the symbol set. The minimum modified Hamming separation between the elements of the set of code words in light of the error introduction properties of the channel is greater than the minimum Hamming distance between the elements of the set of code words. A memory device, a method of using the channel, and a method of generating the code are also described.

Abstract: A controller is used for an electronic memory device which has multi-level cell (MLC) memory elements. The individual MLC memory elements are capable of storing at least two bits. The controller includes a physical interface to couple the controller to the electronic memory device. The controller also includes a processing unit coupled to the physical interface. The processing unit operates the electronic memory device using a restricted number of programming states for a single data bit. The restricted number of programming states includes first and second states used to represent a most significant bit (MSB) of the at least two bits of data of the designated programming states.

Abstract: Embodiments of the present disclosure describe methods, apparatus, and system configurations for providing rank-specific cyclic redundancy checks in memory systems.

Abstract: A method includes determining that a received data stream includes metadata and content, applying error control coding to the received metadata, disabling error control coding for the received content, and storing the metadata, the error control coding, and the content in a memory device.

Abstract: A memory system is provided. The memory system includes a nonvolatile memory and a controller. The nonvolatile memory includes a memory cell array and a read/write circuit configured to perform a read/write operation in the memory cell array during a read operation. The controller is configured to receive the read data from the nonvolatile memory, perform an error detection and correction operation on the read data. Upon detecting an error in a received portion of the read data, the controller is further configured to halt further transmission of the read data from the nonvolatile memory, perform the error detection and correction operation on the received portion of the read data to correct the detected error. After correcting the detected error in the received portion of the read data, the controller is configured to resume transmission of the read data from the nonvolatile memory.

Abstract: A flash memory device provided here comprises a user data area storing user data; and a security data area storing security data. The security data area stores a security data pattern in which first groups of memory cells storing security data are arranged respectively between second groups of memory cells storing dummy data.

Abstract: A method for determining a parity check matrix utilized in a flash memory system is disclosed. The parity check matrix comprises M×N blocks. The method comprises generating a first set of candidate blocks as candidates of a first set of blocks of the M×N blocks; calculating a plurality of first estimated results corresponding to the first set of candidate blocks; determining content of a first block of the M×N blocks according to a best result of the first estimated results; generating a second set of candidate blocks as candidates of a second set of blocks of the M×N blocks; calculating a plurality of second estimated results corresponding to the second set of candidate blocks by considering the content of the first block; determining content a second block of the M×N blocks according to the second estimated results.

Abstract: A method for reducing uncorrectable errors of a memory device regarding Error Correction Code (ECC) includes: performing majority vote according to data read at different times at a same address in order to generate majority vote data corresponding to the address; and checking whether the majority vote data has any uncorrectable error in order to determine whether to output the majority vote data as data of the address. An associated memory device and the controller thereof are further provided.

Abstract: A method of storing data includes receiving general purpose (GP) data and special Error Tolerant or Streaming (ETS) data, storing the GP data using a data storage method, and storing the ETS data using a different data storage method which affects the access rate, resilience to errors, data integrity, storage density, or storage capacity. The storage medium, which can include a disk drive, flash memory, or holographic memory, is utilized differently depending on the required Quality of Service in aspects including block size, storage of error correction codes, utilization of error correction codes, storage area density, physical format pattern, storage verification, or reaction to failed storage verification. For disk drives these differences include spacing between tracks; overlap between tracks; spiral track formatting; concentric track formatting, and size of blocks, and for flash memories these differences include levels per cell and number of cells.

Abstract: A data handling system includes a compressive sensing unit that receives a source date file. A sparseness module compressive sensing unit generates a sparse source data file by inducing sparseness into the source data file. A measurement module within the compressive sensing unit generates a compressed sensed source data file from the sparse source data file and based on a sensing matrix. The compressed sensed source data file is to be transmitted to a remote data storage facility for storage. A recovery unit generates the source data file from the compressed sensed source data file retrieved from the remote data storage facility and based upon the sensing matrix.

Abstract: Apparatuses, systems, and methods are disclosed for retiring storage regions. A determination module (a) determines that data stored in an Error Correcting Code (“ECC”) chunk contains ECC correctable errors, and (b) determines a bit error count for the ECC chunk. The ECC chunk is read from non-volatile solid-state storage media. A threshold module determines if the bit error count satisfies an ECC chunk error threshold. A storage region error module determines if a storage region that contains at least a portion of the ECC chunk satisfies region retirement criteria. The storage region may include a first portion on a first solid-state storage die and a second portion on a second solid-state storage die. A retirement module retires the storage region, including the first portion and the second portion in parallel, in response to the storage region containing at least a portion of the ECC chunk and satisfying the region retirement criteria.

Abstract: A custom decoding algorithm is introduced, in connection with a corresponding decoding structure, to resolve many complexity and large memory requirements of known decoders. A system. A variable node forms a confidence vector of four components, one component for each state of a memory cell, and passes the current primary component (e.g., the largest) to one or more check nodes. The check nodes calculate a temporary component and corresponding index based on all components received from the variable nodes, which they pass back to the respective variable nodes. The variable node updates the confidence vector based on the temporary nodes received from respective check nodes, and determines the correct state for corresponding memory cell based on which component in the confidence vector is currently the primary component.

Abstract: A Low-Density Parity-Check Convolutional Code (LPDCCC) decoder (10) for partial parallel decoding of low-density parity-check convolutional codes, the decoder comprising: a plurality of pipeline processors (11) to receive channel messages and edge-messages; each processor (11) having: a plurality of block processing units (BPUs) (13), each BPU (13) having a plurality of check node processors (CNPs) (14) to process check nodes that enter into the processor (11) and a plurality of variable node processors (VNPs) (15) to process variable nodes that are about to leave the processor (11); and a plurality of Random Access Memory (RAM) blocks (30) for dynamic message storage of the channel messages and the edge-messages; wherein in each processor (11), the VNPs (15) are directly connected to corresponding RAM blocks (30), and the CNPs (14) are directly connected to corresponding RAM blocks (30) such that the connections from the VNPs (15) and CNPs (14) to the corresponding RAM blocks (30) are pre-defined and fixed a

Abstract: Embodiments of the invention describe a dynamic read reference voltage for use in reading data from non-volatile memory cells. In embodiments of the invention, the read reference voltage is calibrated as the non-volatile memory device is used. Embodiments of the invention may comprise of logic and or modules to read data from a plurality of non-volatile memory cells using a first read reference voltage level (e.g., an initial read reference voltage level whose value is determined by the non-volatile device manufacturer). An Error Checking and Correction (ECC) algorithm is performed to identify whether errors exist in the data as read using the first read reference voltage level. If errors in the data as read are identified, a pre-determined value is retrieved to adjust the first read reference voltage level to a second read reference voltage level.

Abstract: A data reading method for a writable non-volatile memory module having physical pages is provided. The method includes grouping the physical pages into a plurality of physical page groups. The method also includes reading first data from a physical page of a first physical page group by applying a first threshold voltage set. The method still includes, when the first data can be corrected by an error checking and correcting circuit and an error bit number corresponding to the first data is not smaller than an error bit number threshold, calculating compensation voltages for the first threshold voltage set. The method further includes adjusting the first threshold voltage set by the compensation voltages and applying the adjusted first threshold voltage set to read data from the physical pages of the first physical page group. Accordingly, data stored in the rewritable non-volatile memory module can be correctly read.

Abstract: A storage module is configured to store data segments, such as error-correcting code (ECC) codewords, within an array comprising a plurality of columns. The ECC codewords may comprise ECC codeword symbols. The ECC symbols of a data segment may be arranged in a horizontal arrangement, a vertical arrangement, a hybrid channel arrangement, and/or vertical stripe arrangement within the array. The individual ECC symbols may be stored within respective columns of the array (e.g., may not cross column boundaries). Data of an unavailable ECC symbol may be reconstructed by use of other ECC symbols stored on other columns of the array.

Abstract: A technique for detecting an imminent read failure in a memory array includes determining whether a memory array, which does not exhibit an uncorrectable error correcting code (ECC) read during an initial array integrity check at a normal read verify voltage level, exhibits an uncorrectable ECC read during a subsequent array integrity check at a margin read verify voltage level. The technique also includes providing an indication of an imminent read failure for the memory array when the memory array exhibits an uncorrectable ECC read during the subsequent array integrity check. In this case, the margin read verify voltage level is different from the normal read verify voltage level.

Abstract: Embodiments of solid-state storage system are provided herein include data recovery mechanism to recover data upon detection of a read error (e.g., an uncorrectable ECC error) in a storage element such as a page. In various embodiments, the system is configured to determine optimal reference voltage value(s) by evaluating the reference voltage value(s) of page(s) that are related to the page where the failure occurred. The related page(a) may include a page that is paired with the initial page where the failure occurred (e.g., the paired pages reside in a common memory cell), or a neighboring page that is physically near the page where the initial page, and/or a paired page of the neighboring page. In another embodiment, the system is configured to perform a time-limited search function to attempt to determine optimal reference voltage values through an iterative process that adjusts voltage values in a progression to determine a set of values that can retrieve the data.

Abstract: A memory system includes an error checking and correction (ECC) engine configured to perform error checking and correction of data temporarily stored in a first memory array and data read out from the first memory array according to a first method, and perform error checking and correction of data stored in a second memory array after read out from the first memory array and data read out from the second memory array according to a second method, wherein the first method and the second method are selected in response to a control signal having at least a first logic level, and the second method checks and corrects data errors occurring at a higher rate compared the first method.

Abstract: According to example embodiments, a method of controlling a memory controller includes executing an error correction code (ECC) on first page data that has been read from a non-volatile memory device using a first read voltage level, estimating a second read voltage level for reading the first page data using metadata of second page data when an uncorrectable error is detected in the first page data according to a result of executing the ECC.

Abstract: A multi-level cell (MLC) memory device may include ‘a’ number of m-bit MLC memory cells; an encoder that encodes ‘k’ bits of data at a code rate of k/n to generate an encoded bit stream; and a signal mapping module that applies pulses to the MLC memory cells in order to write the encoded bit stream in the MLC memory cells. In the device, ‘a’ and ‘m’ may be integers greater than or equal to 2, ‘k’ and ‘n’ may be integers greater than or equal to 1, and ‘n’ may be greater than ‘k’. A method of storing data in the device may include encoding ‘k’ bits of data at a code rate of k/n to generate an encoded bit stream. A method of reading data from the device may include decoding ‘n’ bits of data at a code rate of n/k to generate a decoded bit stream.

Abstract: Methods and apparatus are disclosed related to a memory device, such as a flash memory device that includes an array of memory cells. One such method includes detecting values of charges stored in selected memory cells in the memory cell array. The method also includes processing the detected values in accordance with a Viterbi algorithm so as to determine data stored in the selected memory cells. In one embodiment, the flash memory cell array includes word lines and bit lines. Detecting the values of charges includes detecting values of charges stored in a selected row of memory cells by selecting one of the word lines. The Viterbi algorithm provides correct data where inter-signal interference between the cells affects the accuracy of read data. For example, the Viterbi algorithm can decode error correction codes (ECC).

Abstract: Embodiments of the present disclosure provide methods, systems, and apparatuses related to multilevel encoding with error correction. In some embodiments, data may be programmed and/or read from a matrix of nonvolatile memory cells with concatenated encoding/decoding schemes. In some embodiments, a calculation module may determine an actual bit per cell value of a given combination of parameters of a nonvolatile memory device. Still other embodiments may be described and claimed.

Abstract: According to an embodiment, a semiconductor storage device includes an error correction processing unit that executes encoding process related data to be dispersedly written over a plurality of memory areas and decoding process related data dispersedly written over the plurality of memory areas. A transfer management unit determines whether or not data related to the data transfer request is a target of the error correction process and causes the error correction processing unit to execute the error correction process only with respect to the data determined as the target of the error correction process.

Abstract: A non-volatile solid state memory device and method for balancing write/erase cycles among blocks to level block usage. The non-volatile solid state memory device includes a memory unit having data stored therein and a controller with logic for programming the memory unit according to a monitored occurrence of an error during a read operation. The method includes monitoring an occurrence of an error during a read operation in a memory unit of the device and programming the memory unit according to the monitored occurrence of the error.

Abstract: Systems and methods are provided that confront the problem of failed storage integrated circuits (ICs) in a solid state drive (SSD) by using a fault-tolerant architecture along with one error correction code (ECC) mechanism for random/burst error corrections and an L-fold interleaving mechanism. The systems and methods described herein keep the SSD operational when one or more integrated circuits fail and allow the recovery of previously stored data from failed integrated circuits and allow random/burst errors to be corrected in other operational integrated circuits. These systems and methods replace the failed integrated circuits with fully functional/operational integrated circuits treated herein as spare integrated circuits. Furthermore, these systems and methods improve I/O performance in terms of maximum achievable read/write data rate.

Abstract: A method for data storage includes encoding each of multiple data items individually using a first Error Correction Code (ECC) to produce respective encoded data items. The encoded data items are stored in a memory. The multiple data items are encoded jointly using a second ECC, so as to produce a code word of the second ECC, and only a part of the code word is stored in the memory. The stored encoded data items are recalled from the memory and the first ECC is decoded in order to reconstruct the data items. Upon a failure to reconstruct a given data item from a respective given encoded data item by decoding the first ECC, the given data item is reconstructed based on the part of the code word of the second ECC and on the encoded data items other than the given encoded data item.

Abstract: A read method in a flash memory system containing a flash memory and a memory controller includes updating a selected one of indexes of a selected one of blocks of the flash memory, in a wear-out table for indexing each of the blocks of the flash memory, and setting a start read level to start read retry on the selected block by referring to a read retry table corresponding to a wear-out degree included in the selected index when a current request of read retry on the selected block is received.

Abstract: A high reliability dual inline memory module with a fault tolerant address and command bus for use in a server. The memory module is a card approximately 151.35 mm or 5.97 inches long provided with about a plurality of contacts of which some are redundant, a plurality of DRAMs, a phase lock loop, a 2 or 32K bit serial EE PROM and a 28 bit and a 1 to 2 register having error correction code (ECC), parity checking, a multi-byte fault reporting circuitry for reading via an independent bus, and real time error lines for determining and reporting both correctable errors and uncorrectable error conditions coupled to the server's memory interface chip and memory controller or processor such that the memory controller sends address and command information to the register via address/command lines together with check bits for error correction purposes to the ECC/ Parity register.

Abstract: A solid-state mass storage device and method of operating the storage device to anticipate the failure of at least one memory device thereof before a write endurance limitation is reached. The method includes assigning at least a first memory block of the memory device as a wear indicator that is excluded from use as data storage, using pages of at least a set of memory blocks of the memory device for data storage, writing data to and erasing data from each memory block of the set in program/erase (P/E) cycles, performing wear leveling on the set of memory blocks, subjecting the wear indicator to more P/E cycles than the set of memory blocks, performing integrity checks of the wear indicator and monitoring its bit error rate, and taking corrective action if the bit error rate increases.

Abstract: The variability of outer code failure rate of memory pages of a solid state memory device can be reduced by selectively grouping the pages included in the outer code words. The data in the page groups are encoded into outer code words which are stored in the memory device. Encoding the data of the page groups and storing the encoded data includes intermittently accumulating an outer code parity as the pages are sequentially stored in the memory device according to a particular order. The pages can be randomly selected for the page groups or can be grouped based on predicted or measured failure rate information. In a memory device having multi-level memory cells, predicting the failure rate of a page can be based on whether the page is a most significant bit (MSB) page or a least significant bit (LSB) page.

Abstract: A storage module is configured to store data segments, such as error-correcting code (ECC) codewords, within an array comprising two or more solid-state storage elements. The data segments may be arranged in a horizontal arrangement, a vertical arrangement, a hybrid channel arrangement, and/or vertical stripe arrangement within the array. The data arrangement may determine input/output performance characteristics. An optimal adaptive data storage configuration may be based on read and/or write patterns of storage clients, read time, stream time, and so on. Data of failed storage elements may be reconstructed by use of parity data and/or other ECC codewords stored within the array.

Abstract: A storage device which includes a user area of a memory cell array; a buffer area configured to temporarily store compressed data to be written into the user area; and compressed data management logic configured to control the user area and the buffer area such that compressed data stored in the buffer area is written into the user area. The compressed data management logic manages compressed data to be written into the user area by an ECC block unit rather than by a page-size unit.

Abstract: In a solid state memory device, codewords stored in a unit of the memory device are decoded using an error correcting iterative decoding process. An average number of iterations needed for successfully decoding codewords of the unit is determined, and the average number of iterations is monitored. The average number of iterations can be taken as a measure of wear of the subject unit.

Abstract: A memory controller includes a memory interface that has multiple channels and carries out writing into a nonvolatile memory through each of the channels, a data buffer, an ECC (error correcting code) encoder for applying an error correction encoding processing on write data which are to be written into the nonvolatile memory to generate ECC data, a channel allocation part for allocating the channels to the write data and the ECC data based on a write data format of the nonvolatile memory, a write data reception processing part that stores the write data in the data buffer and outputs the write data to the ECC encoder, and a channel scheduler for transferring the write data stored in the data buffer and the ECC data to the channels of the memory interface as allocated by the channel allocation part.