Abstract: A data storage device may comprise a flash controller and an array of flash memory devices coupled to the flash controller. The array may comprise a plurality of S-Pages that may each comprise a plurality of F-Pages. In turn, each of the plurality of F-Pages may be configured to store a variable amount of data and a variable amount of error correction code. The flash controller may be configured to generate an error correction code across each F-Page of an S-Page and to store the generated error correction code within one or more F-Pages having the largest amount of data.

Abstract: A method for data storage includes storing data in a memory that includes one or more memory units, each memory unit including memory blocks. The stored data is compacted by copying at least a portion of the data from a first memory block to a second memory block, and subsequently erasing the first memory block. Upon detecting a failure in the second memory block after copying the portion of the data and before erasure of the first memory block, the portion of the data is recovered by reading the portion from the first memory block.

Abstract: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

Abstract: Systems and methods of encoding and decoding shaped data include determining a bit representation corresponding to a bit in a representation of a codeword that is read from a non-volatile memory of a data storage device. A soft metric corresponding to the bit representation is determined at least partially based on an amount of shaping of data.

Abstract: Some aspects of the present disclosure relate a method. The method attempts to write an expected multi-bit word to a memory location in memory. After writing of the multi-bit word has been attempted, an actual multi-bit word is read from the memory location. The actual multi-bit word is then compared with the expected multi-bit word to identify a number of erroneous bits and a number of correct bits stored in the memory location. The number of erroneous bits is re-written to the memory location without attempting to re-write the correct bits to the memory location.

Abstract: In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.

Abstract: Methods, systems, and devices are described for forward error correction for flash memory. Encoded data from flash memory may be used to generate a number of data streams. At each of a number of error detection sub-modules operating in parallel, a different one of the data streams is processed. Each error detection sub-module may detect whether a portion of the respective received stream contains an error, and forward the portion to an error correction module. The error correction module, physically separate from the error detection sub-modules, may correct the forwarded portions of the respective received streams containing an error. The age and error rate associated with the flash memory may be monitored, and a coding rate or other aspects may be dynamically adapted to account for these factors.

Abstract: Embodiments of the present disclosure describe methods, apparatus, and system configurations for providing rank-specific cyclic redundancy checks in memory systems.

Abstract: A joint encoding/decoding method for a solid state drive is provided. Firstly, a data-writing process is implemented for encoding a user data by a hard codec and a soft codec respectively, thereby generating a first number of parity bits and a second number of parity bits. Then, the user data, the first number of parity bits and the second number of parity bits are written into a flash memory module. Then, a data-reading process is implemented for decoding the user data by the hard codec according to the first number of parity bits. If the user data is successfully decoded, the user data is outputted. If the user data is unsuccessfully decoded, a step of decoding the user data by the soft codec according to the second number of parity bits is performed.

Abstract: A method for determining a parity check matrix utilized in a flash memory system is disclosed. The parity check matrix comprises M×N blocks. The method includes generating a first set of candidate blocks as candidates of a first set of blocks of the M×N blocks; calculating a plurality of first estimated results corresponding to the first set of candidate blocks; determining content of a first block of the M×N blocks according to a best result of the first estimated results; generating a second set of candidate blocks as candidates of a second set of blocks of the M×N blocks; calculating a plurality of second estimated results corresponding to the second set of candidate blocks by considering the content of the first block; determining content a second block of the M×N blocks according to the second estimated results.

Abstract: Various embodiments of the present inventions provide a symbol flipping LDPC decoding system. For example, a symbol flipping data processing system is disclosed that includes a low density parity check decoder operable to decode codewords and to identify unsatisfied parity checks, a symbol flipping controller operable to change values of at least one symbol in the codewords based on the unsatisfied parity checks to assist the low density parity check decoder to decode the codewords, a scheduler operable to control a decoding and symbol flipping mode in the low density parity check decoder and the symbol flipping controller, and a hard decision queue operable to store hard decisions for converged codewords from the low density parity check decoder.

Abstract: A system includes a flash memory, an encoder, a first interface, a decoder and a controller. The encoder is configured to (i) receive data, and (ii) encode the data based on an error correction code. The first interface is configured to (i) write the encoded data to a memory cells in the flash memory, and (ii) read the encoded data back from the memory cells. The decoder is configured to (i) decode the encoded data read back from the memory cells, and (ii) based on the decoded data, determine a number of decoding errors for the plurality of memory cells. The controller is configured to, in response to the number of decoding errors being greater than or equal to a first threshold, cease accessing the memory cells. The first threshold is less than a maximum number of errors correctable by the error correction code for the memory cells.

Abstract: Described embodiments provide a media controller to read data stored in a media. The media controller determines a value for each bit of a shortened codeword from the media. The shortened codeword includes a plurality of non-shortened bits of a full codeword, where the full codeword includes the plurality of non-shortened bits and one or more shortened bits. Shortened bits correspond to bits unused in the shortened codeword. The media controller converts the determined values for each bit of the shortened codeword into a first set of log-likelihood ratio (LLR) values. The full codeword is decoded using the first set of LLR values for the shortened codeword. The media controller dampens one or more LLR values corresponding to non-shortened bits of the codeword to produce a second set of LLR values and decodes the second set of LLR values.

Abstract: Data protection across multiple memory blocks can include writing a first portion of a codeword in a first memory block and writing a second portion of the codeword in a second memory block. The first memory block and the second memory block can be different memory blocks. The first portion of the codeword can be written in a different location in the first memory block than the second portion of the codeword is written in the second memory block.

Abstract: A semiconductor memory device includes a plurality of detecting code generators configured to generate a plurality of detecting codes to detect errors in a plurality of data items, respectively, a plurality of first correcting code generators configured to generate a plurality of first correcting codes to correct errors in a plurality of first data blocks, respectively, each of the first data blocks containing one of the data items and a corresponding detecting code, a second correcting code generators configured to generate a second correcting code to correct errors in a second data block, the second data block containing the first data blocks, and a semiconductor memory configured to nonvolatilely store the second data block, the first correcting codes, and the second correcting code.

Abstract: A memory device includes but is not limited to a non-volatile memory array and control logic integrated with and distributed over the non-volatile memory array. The control logic can be operable to maintain a plurality of copies of data in the non-volatile memory array and detect errors by comparison of selected ones of the plurality of copies.

Abstract: A storage medium receiving write data provided by a host device, providing read data to the host and including a first module and a second module is disclosed. The first module includes a first memory cell and a first controller. The first memory cell stores the write data. The first controller reads the first memory cell to generate a first accessing result. The second module includes a second memory cell and a second controller. The second memory cell stores the write data. The second controller reads the second memory cell. When the first accessing result has an error and the error cannot be corrected by the first controller, the first controller requests the second controller to read the second memory cell to generate a second accessing result, and the second controller serves the second accessing result as the read data and provides the read data to the host.

Abstract: A method of programming a non-volatile semiconductor memory device includes determining a number of bit cells that failed to program verify during a program operation. The bit cells are included in a subset of bit cells in an array of bit cells. The method further determines whether an Error Correction Code (ECC) correction has been previously performed for the subset of bit cells. The program operation is considered successful if the number of bit cells that failed to program verify after a predetermined number of program pulses is below a threshold number and the ECC correction has not been performed for the subset of bit cells.

Abstract: A method begins by a computing device determining that dispersed storage network (DSN) memory is to be accessed regarding data. The method continues when the computing device is paired with a DSN access token module with the DSN access token module retrieving a plurality of sets of at least a threshold number of dispersed storage (DS) error coding function slices from the DSN memory via the computing device. The method continues with at least one of the computing device and the DSN access token module decoding the plurality of sets of the at least a threshold number of DS error coding function slices using a default DS error coding function to recapture a DS error coding function and executing, by one or more of the computing device and the DSN access token module, the DS error coding function to access the DSN memory regarding the data.

Abstract: An output buffer circuit for a non-volatile memory comprises an error check circuit, an error correction circuit, a switch circuit, and three storage circuits. The error check circuit receives the plurality of data bits and the plurality of ECC bits from the non-volatile memory to determine if the plurality of data bits need to be corrected and generates a correction signal. The error correction circuit receives the plurality of data bits and the plurality of ECC bits and generates a plurality of corrected data bits in response to the correction signal. A switch enables the output buffer circuit to concurrently performs operations of error check, error correction, and transfer of data bits out of the output buffer circuit on three distinct pluralities of data bits. The switch allows reallocation of storage circuits to different operations without any data transfer.

Abstract: A method begins with a processing module receiving an access request for the data object. The method continues by ascertaining that the data object is divided into a plurality of data segments and that plurality of data segments are dispersed storage error encoded to produce a plurality of sets of encoded data slices. The method continues by ascertaining batching of the plurality of sets of encoded data slices, wherein the plurality of sets of encoded data slices are arranged into a set of batched encoded data slices. The method continues by outputting a set of access requests for the set of batched encoded data slices to storage units of the DSN.

Abstract: Memory devices and methods are described such as those that mix data and associated error correction code blocks between multiple memory device locations. Examples include mixing between multiple memory blocks, mixing between memory pages, mixing between memory chips and mixing between memory modules. In selected examples, memory blocks and associated error correction code are mixed between multiple levels of memory device hierarchy.

Abstract: Methods and apparatus are disclosed related to a memory device, such as a flash memory device that includes an array of memory cells. One such method includes detecting values of charges stored in selected memory cells in the memory cell array. The method also includes processing the detected values in accordance with a Viterbi algorithm so as to determine data stored in the selected memory cells. In one embodiment, the flash memory cell array includes word lines and bit lines. Detecting the values of charges includes detecting values of charges stored in a selected row of memory cells by selecting one of the word lines. The Viterbi algorithm provides correct data where inter-signal interference between the cells affects the accuracy of read data.

Abstract: A system for decoding data is disclosed. The system includes: an input interface configured to receive data associated with encoded data; a first decoder configured to decode a first subset of the encoded data to obtain a first portion of decoded data; a second decoder configured to decode a second subset of the encoded data to obtain a second portion of the decoded data, wherein the second portion includes decoded data not included in the first portion; and an output interface configured to output the decoded data.

Abstract: Cross-decoding assists decoding of an otherwise uncorrectable error when decoding a desired page of a multi-level-cell technology flash memory. A solid-state disk (SSD) controller adjusts space allocated to redundancy respectively within various pages (e.g. upper, middle, and lower pages) such that the respective pages have respective effective Bit Error Rates (BER)s, optionally including cross-decoding, that approach one another. Alternatively the controller adjusts the allocation to equalize decoding time (or alternatively access time), optionally including decoding time (accessing time) accrued as a result of cross-decoding when there is an otherwise uncorrectable error. The adjusting is via (a) respective ratios between allocation for ECC redundancy and user data space, and/or (b) respective coding rates and/or coding techniques for each of the various pages.

Abstract: Data move operations in a memory device are described that enable identification of data errors. Error detection circuitry in the memory device can be operated using parity data or ECC data stored in the memory. Results of the error detection can be accessed by a memory controller for data repair operations by the controller.

Abstract: A method of reading from a memory module which includes a plurality of memories is provided. The method includes reading data corresponding to a plurality of burst length units from the plurality of memories; correcting an error of the read data using a storage error correction code; and outputting the error corrected data by a unit of data corresponding to one burst length unit.

Abstract: Embodiments of the present disclosure describe apparatus, methods, computer-readable media and system configurations for dividing error correcting code (“ECC”) codewords into portions and storing the portions among multiple memory components. For example, a device may include non-volatile memory (“NVM”) including m die. A memory controller may be configured to store portions of an ECC codeword among the m die. In various embodiments, a memory controller and/or an iterative decoder such as a low-density parity-check (“LDPC”) decoder may be configured to decode ECC codewords based at least in part on reliability metrics associated with the m die. Other embodiments may be described and/or claimed.

Abstract: Approaches for decoding data read from memory cells of a nonvolatile, solid state memory involve attempting to decode hard data using a hard decoding process prior to a time that soft data is available to the decoder. The hard data includes information about the digital symbols stored in the memory cells without data confidence information. The soft data includes information about the digital symbols stored in the memory cells and data confidence information. In response to the hard decoding process failing to achieve convergence, after the soft data becomes available to the decoder, the soft data is decoded using a soft decoding process. The decoder generates an output of the decoded data after the hard decoding process or the soft decoding process achieves convergence.

Abstract: A method for data storage includes scrambling data for storage in a memory device using a given scrambling seed. A statistical distribution of the scrambled data is assessed, and a measure of randomness of the statistical distribution is computed. A scrambling configuration of the data is modified responsively to the measure of randomness, and the data having the modified scrambling configuration is stored in the memory device.

Abstract: According to one embodiment, a data storage apparatus includes a channel controller, an error correction controller, and an additional correction module. The channel controller is configured to control writing to and reading from the nonvolatile memories of respective channels. The error correction controller is configured to use inter-channel error correction codes during any read process, performing inter-channel correction process on those of the data items read under the control of the channel controller, which have been designated. The additional correction module is configured to designate, in accordance with errors detected by the channel controller, data items to additionally correct, and to notify the data items so designated to the error correction controller while the channel controller is reading the data necessary in the inter-channel correction process.

Abstract: Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental error correction codes, such as convolutional codes, are used. By using separate dimensions, the likelihood that a defect affects both error recovery techniques is lessened, thereby increasing the probability that error recovery can be performed successfully. In one example, block error correction codes are used for data stored along rows, and this data is stored in one level of multiple-level cells of the array. Supplemental error correction codes are used for data stored along columns, such as along the cells of a string, and the supplemental error correction codes are stored in a different level than the error correction codes.

Abstract: System and methods for proactively refreshing portions of a nonvolatile memory including a memory system that proactively refreshes a portion of nonvolatile memory based on data associated with the portion. The data may include the time elapsed since the portion was last refreshed, the number of times the portion has been cycled, and the average operating temperature of the nonvolatile memory. A portion of nonvolatile memory, when meeting certain criteria determined from the data, may be proactively refreshed during a downtime when the nonvolatile memory is not otherwise being accessed.

Abstract: A data storage system configured to adaptively code data is disclosed. In one embodiment, a data storage system controller determines a common memory page size, such as an E-page size, for a non-volatile memory array. Based on the common memory page size, the controller selects a low-density parity-check (LDPC) code word length from a plurality of pre-defined LDPC code word lengths. The controller determines LDPC coding parameters for coding data written to or read from the memory array based on the selected LDPC code word length. By using the plurality of pre-defined LDPC code word lengths, the data storage system can support multiple non-volatile memory page formats, including memory page formats in which the common memory page size does not equal any LDPC code word length of the plurality of pre-defined LDPC code word lengths. Flexibility and efficiency of data coding can thereby be achieved.

Abstract: The disclosure is related to an apparatus and methods for addressing variations in bit error rates amongst data storage segments. In a particular embodiment, an apparatus includes a controller that detects variations in bit error rates amongst different segments of a plurality of segments in a storage medium. The controller also adjusts a read/write operation parameter according to the detected variations amongst the bit error rates in the plurality of segments.

Abstract: According to one embodiment, a data storage apparatus comprises a channel controller, an encoding module, and a data controller. The channel controller configured to control data input and output to and from nonvolatile memories for channels. The encoding module configured to generate encoded data for an interchannel error correction process, using data stored in each of the nonvolatile memories. The data controller configure to manage the encoded data in units of logical blocks when the channel controller writes the encoded data in parallel to the channels, and to allocate parity data contained in the encoded data to planes of the same channel in each logical block.

Abstract: Apparatuses, systems, and methods are disclosed to manage non-volatile media. A method includes determining a configuration parameter for a set of storage cells of a non-volatile recording medium. A method includes reading data from a set of storage cells using a determined configuration parameter. A method includes adjusting a configuration parameter based on read data.

Abstract: A method for performing a static wear leveling on a flash memory is disclosed. Accordingly, a static wear leveling unit is disposed with a block reclamation unit of either a flash translation layer or a native file system in the flash memory, and utilizes less memory space to trace a distribution status of block leveling cycles of each physical block of the flash memory. Based on the distribution record of the block leveling cycles, the number of the leveling cycles less than a premeditated threshold would be found while the system idles. Then the static wear leveling unit requests the block reclamation unit to level the found blocks. Before leveling the found block, the rarely updated data is compelled to move from one block to another block which is leveled frequently, whereby accurate wear leveling cycles for the blocks can be averaged extremely.

Abstract: A nonvolatile memory device comprises a memory cell array comprising a selected page comprising multiple error correction code (ECC) units, and a voltage generation unit configured to generate a read voltage to read data from the selected page. Read voltage levels are set individually for the respective ECC units according to data detection results for each of the ECC units. During a read retry section performed with respect to selected ECC units of the selected page for which read errors have been detected, a re-read operation of the selected ECC units is performed according to the respective read voltage levels set for the selected ECC units.

Abstract: Embodiments of the present disclosure provide methods, systems, and apparatuses related to multilevel encoding with error correction. In some embodiments, a plurality of bits may be encoded into a plurality of memory cells by responding to bits of the plurality of bits by changing the logic levels of corresponding groups of memory cells of the plurality of memory cells. Other embodiments may be described and claimed.

Abstract: An operating method of a semiconductor device may comprise monitoring error handling information for a data read from a semiconductor memory device; and generating a refresh request for one or more memory cells of the semiconductor memory device according to the error handling information.

Abstract: A computer system includes a memory controller coupled to a memory module containing several DRAMs. The memory module also includes a non-volatile memory storing row addresses identifying rows containing DRAM memory cells that are likely to lose data during normal refresh of the memory cells. Upon power-up, the data from the non-volatile memory are transferred to a comparator in the memory controller. The comparator compares the row addresses to row addresses from a refresh shadow counter that identify the rows in the DRAMs being refreshed. When a row of memory cells is being refreshed that is located one-half of the rows away from a row that is likely to loose data, the memory controller causes the row that is likely to loose data to be refreshed. The memory controller also includes error checking circuitry for identifying the rows of memory cells that are likely to lose data during refresh.

Abstract: A method of operating a memory controller includes reading data from a first block of a memory device; detecting degraded pages from a plurality of pages of the first block and counting a number of the degraded pages in the first block; and recharging or reclaiming the first block, which includes the degraded pages, based on the counted number of the degraded pages.

Abstract: The present invention relates to the field of data storage, and more particularly to an estimation technology in an error correction process of a flash memory. The present invention provides an error estimation module and an error estimation method thereof for a flash memory. The estimation module mainly includes a timer, a quantification index table, a storage page table, and an error index table. The error estimation method of a flash memory includes: creating rewriting and programming error a priori data, and estimating an error rate of the flash memory by using special physical signals in a flash memory device to provide proper error estimation for an error correction algorithm of the flash memory. The present invention is applicable to a solid-state hard disk controller, a flash memory controller, and the like, where the flash memory device is used as a storage medium, so that the reliability of the flash memory device is improved.

Abstract: Examples are disclosed for techniques associated with a read and write window budget for a two level memory (2LM) system. In some examples, a read and write window budget may be established for the 2LM system that includes a first level memory and a second level memory. The established read and write window budget may include a combination of a first set of memory addresses and a second set of memory addresses of the second level of memory. The first set of memory addresses may be associated with non-volatile memory cells having wider cell threshold voltage distributions compared to cell threshold voltage distributions for non-volatile memory cells associated with the second set of memory addresses. According to some examples, the established read and write window budget may part of a strategy to meet both a completion time threshold for a given amount of memory and an acceptable error rate threshold for the given amount of memory when fulfilling read or write requests to the second level memory.

Abstract: An apparatus may comprise a controller to retrieve data from a non-volatile memory, and an error correction module operable on the controller to read a memory cell of the non-volatile memory at a first set of sense conditions comprising a multiplicity of sense conditions. The error correction module may be further operable to set a first set of bits in an encoded output, the first set of bits comprising a logical state bit to indicate a logical state of the memory cell and one or more additional bits in the encoded output to indicate accuracy of the logical state bit based upon results of the read at the first set of sense conditions, the first set of sense conditions comprising a greater number than that of the first set of bits. Other embodiments are disclosed and claimed.

Abstract: A flash memory and an accessing method thereof are provided. The accessing method includes steps of receiving a plurality of contiguous accessing commands, sequentially selecting a plurality of word lines corresponding to the accessing commands, and accessing a plurality of memory cells on each of the word lines according to the accessing commands sequentially. Here, any two of the contiguously selected word lines do not neighbor with each other.

Abstract: The present disclosure includes methods, devices, and systems for error detection/correction based memory management. One embodiment includes performing a read operation with respect to a particular group of memory cells of a memory device and, if the read operation results in an uncorrectable error, determining whether to retire the particular group of memory cells in response to a status of an indicator corresponding to the particular group of memory cells, wherein the status of the indicator indicates whether the particular group of memory cells has a previous uncorrectable error associated therewith.

Abstract: An accelerated erasure coding system includes a processing core for executing computer instructions and accessing data from a main memory, and a non-volatile storage medium for storing the computer instructions. The processing core, storage medium, and computer instructions are configured to implement an erasure coding system, which includes: a data matrix for holding original data in the main memory; a check matrix for holding check data in the main memory; an encoding matrix for holding first factors in the main memory, the first factors being for encoding the original data into the check data; and a thread for executing on the processing core. The thread includes: a parallel multiplier for concurrently multiplying multiple entries of the data matrix by a single entry of the encoding matrix; and a first sequencer for ordering operations through the data matrix and the encoding matrix using the parallel multiplier to generate the check data.

Abstract: Methods and apparatus to provide dynamic window to improve NAND (Not And) memory endurance are described. In one embodiment, a program-erase window associated with a NAND memory device is dynamically varied by starting with a higher erase verify (TEV) voltage and lowering the TEV voltage with subsequent cycles over a life of the NAND memory device based on a current cycle count value. Alternatively, the program-erase window is dynamically varied by starting with a higher erase verify (PV) voltage and erase verify (TEV) voltage and lowering the PV and TEV voltages with subsequent cycles over a life of the NAND memory device based on the current cycle count value. Other embodiments are also disclosed and claimed.