Abstract: Systems and methods of the present disclosure may be used to improve equalization module architectures for NAND cell read information. For example, embodiments of the present disclosure may provide for de-noising of NAND cell read information using a Multiple Shallow Threshold-Expert Machine Learning Models (MTM) equalizer. An MTM equalizer may include multiple shallow machine learning models, where each machine learning model is trained to specifically solve a classification task (e.g., a binary classification task) corresponding to a weak decision range between two possible read information values for a given NAND cell read operation. Accordingly, during inference, each read sample with a read value within a weak decision range is passed through a corresponding shallow machine learning model (e.g., a corresponding threshold expert) that is associated with (e.g., trained for) the particular weak decision range.

Abstract: A memory system is provided. The memory system includes an error correction code circuit configured to correct a maximum of N error bits in each of multiple read data and a monitor circuit configured to monitor multiple fail word addresses associated with M error bits, and further configured to output a first word address in the fail word addresses to replace first memory locations corresponding to the first word address. Each of the fail word addresses corresponds to one of multiple counter values, and the first word address corresponds to a maximum value of the counter values.

Abstract: Systems, apparatus, and methods related to configurable data protection circuitry. A memory includes a plurality of memory devices and a memory controller that can be coupled to the memory via a plurality of channels. The channels comprise respective subsets of the plurality of memory devices. The memory controller comprises data protection circuitry to accommodate a first codeword configuration of a number of codewords responsive to the plurality of memory devices having a first operating mode corresponding to a first input/output (I/O) width and accommodate a second codeword configuration of the number of codewords responsive to the plurality of memory devices having a second operating mode corresponding to a second I/O width, as well as switch between the first operating mode of the plurality of memory devices and the second operating mode of the plurality of memory devices.

Abstract: A method for collecting bit error information is provided. According to the method, a head node may encapsulate indication information into an IPv6 extension header of an IPv6 measurement request packet. The indication information indicates at least one intermediate node on a transmission path of the IPv6 measurement request packet to record bit error information into the IPv6 extension header. According to the application, the bit error information of the intermediate node on the transmission path can be collected.

Abstract: An electronic circuit and method for self-diagnosis of a data memory (RAM) is described comprising/using a first error correction code unit (ECCGEN1) for generating an error correction code (ECCIN) from user data (DIN) to be written into the data memory (RAM). The electronic circuit is arranged to feed the user data (DIN) written into the memory and the related error correction code (ECCIN) into the error check unit (ECCCHK/CORR) in the write cycle when writing the user data and the related error correction code (ECCIN) into the data memory (RAM) to provide a Latent Fault flag in case of a determined difference between the error correction code (ECCIN) and the countercheck code (CCCIN) calculated from the user data (DIN) by the error check unit (ECCCHK/CORR).

Abstract: A memory system includes a memory device and a memory controller. The memory device includes a plurality of memory cells. The memory controller includes an error correction code (ECC) circuit. The ECC circuit is configured to determine data rows of first write data that are not all zeros and store the determined data rows in buffer rows of a buffer along with corresponding row indexes. The memory controller is configured to write second data based on the buffer to the memory device.

Abstract: Systems, apparatus and methods are provided for providing an error correction code (ECC) architecture with flexible memory mapping. An apparatus may include an error correction code (ECC) engine, a multi-channel interface for one or more non-volatile storage devices, a memory including a plurality of memory units, a storage containing a plurality of mapping entries to indicate allocation status of the plurality of memory units and a memory mapping manager. The plurality of memory units may be coupled to the ECC engine and the multi-channel interface. The memory mapping manager may be configured to control allocation of the plurality of memory units and set allocation status in the plurality of mapping entries.

Abstract: A double data rate dual-in-line memory module (DDR DIMM), a memory system and an operation method thereof using a data buffer for error correction are disclosed. In an example, the DDR DIMM includes a first channel including a first group of DRAM chips and a first data buffer corresponding to the first group of DRAM chips; wherein: the first data buffer is configured to obtain all write data signals input to the first channel, encode write data of all the write data signals to generate a first ECC, and send the first ECC and the write data to the first group of DRAM chips in a write operation. The disclosure can realize excellent error detection and error correction within the memory module and can greatly reduce bit error rate of the entire memory module.

Abstract: A controller may include i) a storage memory configured to store N-bit read data and N reliability data units, ii) a decoder configured to execute a decoding operation for the read data based on the reliability data units, and iii) a processing circuit configured to determine a value of reliability data unit corresponding to I-th bit of read data based on an I-th bit of first read data, an I-th bit of second read data and a difference between first syndrome weight and second syndrome weight.

Abstract: A storage controller for writing first data to a first memory cell by performing programming of the first memory cell N-times, where N is a positive integer greater than 1, includes a write amplification manager and a central processing unit. The write amplification manager checks whether the first data is invalid data before an Nth programming of the first memory cell is performed, and the central processing unit does not perform the N-th programming of the first memory cell when the first data is the invalid data.

Abstract: A storage unit is disclosed. The storage unit may include storage for a component codeword. The component codeword may be stored in a block in the storage. The block may also store a block codeword. An interface may receive a read request for a chunk of data from a host and may send the chunk of data to the host. A circuit may read the component codeword from the block in the storage. An error correcting code (ECC) decoder may determine the chunk of data based at least in part on the component codeword.

Abstract: A method for performing data management of a memory device with aid of targeted protection control and associated apparatus are provided. The method may include: receiving a first host command from a host device; sending a first operating command to a non-volatile (NV) memory to read first stored data from a first location within the NV memory; monitoring a read count of the first location to determine whether the read count of the first location reaches a read count threshold; monitoring at least one error bit count of other stored data of at least one other location within the NV memory to determine whether the at least one error bit count reaches an error bit count threshold; and starting a targeted protection procedure to process second stored data, for preventing the second stored data from being damaged by at least one reading behavior of the host device.

Abstract: A method for intra-block recovery from memory page read failures of memory pages is provided. The method comprises providing a data storage device comprising a plurality of memory pages. Corresponding memory pages are physically organized as a plurality of blocks comprising each the corresponding pages, each memory page comprising a plurality of non-volatile memory cells. The method comprises grouping memory pages of a block into at least one window. Each window comprises a plurality of memory pages of the block. The method further comprises determining a window parity page for each window of the block for a recovery of page read failures of the memory pages of the block, and upon determining that a predefined number of memory pages of the window is written or not yet written, maintaining the determined window parity page as part of the related window of memory pages of the block or not.

Abstract: A method for collecting bit error information is provided. According to the method, a head node may encapsulate indication information into an IPv6 extension header of an IPv6 measurement request packet. The indication information indicates at least one intermediate node on a transmission path of the IPv6 measurement request packet to record bit error information into the IPv6 extension header. According to the application, the bit error information of the intermediate node on the transmission path can be collected.

Abstract: A memory transparent in-system built-in self-test may include performing in-system testing on subsets of memory cells over one or more test intervals of one or more test sessions. A test interval may include copying contents of a subset of memory cells to a register(s), writing test data (e.g., a segment of a pattern) to the subset of memory cells, reading back contents of the subset of memory cells, and restoring the content from the register(s) to the subset of memory cells. In-system testing may be performed on overlapping sets of memory cells. In-system testing may be performed on successive subsets of memory cells within a row (i.e., fast column addressing) and/or within a column (fast column addressing). In-system testing may be performed on sets of m blocks of memory cells during respective test intervals. The number of m blocks tested per interval may be configurable/selectable.

Abstract: A memory device includes a page buffer with a cache register and data registers, a memory array with a set of sub-blocks of memory cells configured as single-level cell (SLC) memory, and control logic. The control logic performs operations including: causing a first page of SLC data to be stored in the cache register; causing the first page of the SLC data to be moved from the cache register to a first data register; causing a subsequent page of the SLC data to be stored in the cache register; causing the SLC data stored in the cache register and in the data registers to be concurrently programmed to the set of sub-blocks, where the first page is programmed to a first sub-block and the subsequent page is programmed to a subsequent sub-block; and causing a subset of the operations for programming the set of sub-blocks to be performed in parallel.

Abstract: A decoder is disclosed with error correction for memory data. The decoder's error correction is extended to additional faulty bits by integrating a memory test into the error correction to identify faulty bits in the memory data. A method for correction can include writing a known pattern to the failing address (and possibly to neighboring addresses), reading the known pattern back and comparing the read data to the written pattern to identify the failing bits. The failing bits are then used together with the error correction data to correct memory data having multiple incorrect bits or to alert other components about the failing bit locations.

Abstract: A method of operating a memory system that comprises a memory device including a plurality of memory blocks and a memory controller, includes detecting a first memory block having a degradation count greater than or equal to a first reference value by the memory controller. A first command for the first memory block is transmitted to the memory device by the memory controller. A first voltage is applied to all of a plurality of word lines connected to the first memory block and a second voltage to a bit line connected to the first memory block in response to the first command by the memory device. The first voltage is greater than a voltage applied to turn on memory cells connected to all of the plurality of word lines. The second voltage is greater than a voltage applied to the bit line during program, read or erase operations.

Abstract: The present disclosure provides a data storage device. The data storage device includes a first area configured to store a first data; a second area configured to store a second data. The second data is associated with the first data, and the first data and/or the second data exclude an ECC.

Abstract: An apparatus comprising a memory array including a plurality of memory cells arranged in a plurality of columns and a plurality of rows is provided. The apparatus further comprises circuitry configured to perform an error detection operation on the memory array to determine a raw count of detected errors, to compare the raw count of detected errors to a threshold value to determine an over-threshold amount, to scale the over-threshold amount according to a scaling algorithm to determine a scaled error count, and to store the scaled error count in a user-accessible storage location.

Abstract: Methods, systems, and devices for a dynamic parity scheme are described. A memory system may include a memory device with multiple blocks of memory cells, where each block includes a first quantity of pages of memory cells storing data and a second quantity of pages of memory cells storing parity information associated with the data. In some cases, the memory system may increase the quantity of pages in a block of memory cells storing parity information to improve a reliability of the data stored in the block of memory cells. For example, the memory system may increase the quantity of pages storing parity information at the block of memory cells after performing a threshold quantity of access operations at the block of memory cells or in response to detecting more than a threshold quantity of errors in data stored at the block of memory cells.

Abstract: A storage unit is disclosed. The storage unit may include storage for a component codeword. The component codeword may be stored in a block in the storage. The block may also store a block codeword. An interface may receive a read request for a chunk of data from a host and may send the chunk of data to the host. A circuit may read the component codeword from the block in the storage. An error correcting code (ECC) decoder may determine the chunk of data based at least in part on the component codeword.

Abstract: A base die is configured to: receive first data in a writing phase, perform error correction code encoding processing to generate encoded data, and transmit second data to a memory die in the writing phase, wherein the second data includes the first data and the encoded data; and receive the second data from the memory die in a reading phase, perform error checking and correction processing, and transmit third data in the reading phase, wherein the third data is the first data after the error checking and correction processing.

Abstract: Embodiments are provided for error mitigation in quantum programs. In some embodiments, a system can include a processor that executes computer-executable components stored in memory. The computer-executable components include a compilation component that causes encoding of one or more qubits according to a circular repetition code at a time after operations on the one or more qubits and before readout.

Abstract: A method for execution by a storage network includes receiving a request pertaining to a data object. Metadata associated with the data object is determined and used to identify data segments associated with the data object and a set of storage units associated with the data segments. Based on a set of query requests, a response is received from a storage unit from the set of storage units. When the response indicates a storage environment that is unfavorable as compared to predetermined performance metrics, the storage network facilitates migration of encoded data slices associated with the storage unit to another storage unit.

Abstract: Systems and methods for propagating poison information are provided. Embodiments include receiving write data having a poison flag asserted indicating the data to be written to a memory device is erroneous. Embodiments further include converting the write data to a pre-fixed data pattern and generating a parity code, based upon, at least in part, the pre-fixed data pattern. Embodiments may also include injecting a correctable error into the write-data or parity code and writing the write data and parity code into the memory device. The correctable error injection may occur in the data or in the parity code and during the read the comparison may occur accordingly.

Abstract: Methods, systems, and devices for enhanced data reliability in multi-level memory cells are described. For a write operation, a host device may identify a first set of data to be stored by a set of memory cells at a memory device. Based on a quantity of bits within the first set of data being less than a storage capacity of the set of memory cells, the host device may generate a second set of data and transmit a write command including the first and second sets of data to the memory device. For a read operation, the host device may receive a first set of data from the memory device in response to transmitting a read command. The memory device may extract a second set of data from the first set of data and validate a portion of the first set of data using the second set of data.

Abstract: Methods, systems, and devices for dynamic memory management operation are described. A memory system may store data in a first block that includes a first type of memory cells configured to store a single bit of information (e.g., single level cells (SLCs)). The memory system may set a flag associated with the data indicating whether the data includes secure information and is to remain in a block that includes SLCs after a memory management operation (e.g., a garbage collection operation). The memory system may store, as part of the memory management operation for the first block and based on the flag, valid data of the first block in a second block that includes SLCs or a third block that includes a second type of memory cells configured to store two or more bits of information.

Abstract: An integrated circuit (IC) device for detecting errors within a register, the IC device includes registers and parity checking circuitry. The parity checking circuitry is coupled to the registers and comprises a first parity circuitry, a second parity circuit, and error detection circuitry. The first parity circuit receives first register values from the registers and determine a first value from the first register values. The second parity circuit is receives second register values from the registers and determines a second value from the second register values. The error detection circuitry compares the first value and the second value to detect a first error within the registers, and output an error signal indicating the first error.

Abstract: A method of operating a distributed storage system, the method includes identifying missing chunks of a file. The file is divided into stripes that include data chunks and non-data chunks. The method also includes identifying non-missing chunks available for reconstructing the missing chunks and reconstructing missing data chunks before reconstructing missing non-data chunks using the available non-missing chunks.

Abstract: A method and device for testing a conversion relationship between different reading manners in a flash memory chip and a readable storage medium are provided. Block reading is respectively performed, a bit error rate file is recorded, a test starting point, a test ending point and a test step length are is set in a block, the bit error rate file of the number of times of corresponding page reading is respectively recorded, and the number of times of page reading that is closest to the proportion of block error codes are found from the proportion of page error codes, a conversion of the number of times of block reading and the number of times of page reading is completed, conversion coefficients of the block reading and the page reading can be calculated for blocks in different states of a life cycle.

Abstract: A wireless transmit/receive unit (WTRU) may receive a constellation symbol that includes indications that each are associated with a respective WTRU of a plurality of WTRUs. The WTRU may determine that a first weight associated with a first indication of the indications is different than a second weight associated with a second indication of the indications. The indications may comprise indications of bits modulated at a multi-user constellation bit division multiple access modulator (MU-CBDMAM).

Abstract: Multiple independent point-to-point memory channels are operated, by at least one controller, in parallel to form a wider memory channel. The memory components on these point-to-point channels include the ability to connect to multiple (e.g., 2) instances of these independent memory channels. The controller operates multiple instances of the wider channels with the memory components configured in a clamshell mode. A single memory component is also operated in clamshell mode to provide error correction code information, independently of the other wider channels, to multiple instances of the wider memory channel.

Abstract: The present disclosure provides a terminal vibration evaluation method performed by an electronic device. The method includes: acquiring an actual vibration curve of a target terminal when a target game scenario is displayed; acquiring a predefined vibration description file associated with the target game scenario, and determining a predefined vibration curve according to the predefined vibration description file; determining target deviation data between the actual vibration curve and the predefined vibration curve; and determining, according to the target deviation data, whether vibration of the target terminal matches the target game scenario. The present disclosure provides a measurement solution used for determining whether terminal vibration matches a game scenario (for example, a game sound and a game picture), which helps improve a matching degree between terminal vibration and the game scenario, thereby improving a sense of substitution of the game and a sense of immersion of a player.

Abstract: Systems and methods are described for efficiently performing various operations at the granularity of a consistency group (CG) within a cross-site storage solution. An example of one of the various operations includes an independent and parallel resynchronization approach that independently brings individual volumes of a CG to a steady state of in-synchronization (InSync), thereby contributing to scalability of CGs by supporting CGs having a large number of member volumes without requiring a change to the resynchronization process. Another example includes preserving dependent write-order consistency when a remote mirror copy goes out-of-synchronization (OOS) for any reason by driving all member volumes OOS responsive to any member volume becoming OOS. Yet another example includes independent creation of snapshots by member volumes to support efficient and on-demand creation by an application of a common snapshots of all or a subset of peered member volumes of a CG with which the application is associated.

Abstract: Embodiments include receiving fixed size error checking and correction data blocks and metadata at a memory controller. Embodiments may include performing data to symbol mapping based upon the fixed size data blocks and providing an output of the data to symbol mapping to a first encoder without metadata configured for full detection correction of single device error and to a second encoder with metadata configured for partial detection correction of single device error. Embodiments may include receiving data at a memory based upon an output from the first encoder and the second encoder and receiving data from the memory at a first decoder without metadata configured for full detection correction of single device error and at a second decoder with metadata configured for partial detection correction. Embodiments may include re-mapping symbol data from the first decoder and the second decoder to actual data and generating output data blocks and metadata.

Abstract: A first serial management interface device includes one or more input/output pins and a controller coupled to the one or more input/output pins. The controller receives a first frame from a second serial management interface device via a first input/output pin and generates a first error code based on the first frame received from the second serial management interface device. The controller receives a second frame from the second serial management interface device via a second input/output pin subsequent to receiving the first frame. The second frame includes a second error code. The controller compares the first error code to the second error code to determine whether first error code and the second error code match.

Abstract: Methods, systems, and devices for coordinated error protection are described. A set of data and an indication of whether a first management procedure performed by a memory device on the set of data detected one or more errors in the set of data may be received at a host device. At the host device, a second error management procedure may be performed on the set of data received from the memory device. Based on the received indication and the second error management procedure, multiple bits indicating whether one or more errors associated with the set of data were detected at the memory device, the host device, or both may be generated. The set of data may be validated or discarded based on the multiple bits.

Abstract: A memory-testing circuit configured to perform a test of reference bits in a memory. In a read operation, outputs of data bit columns are compared with one or more reference bit columns. The memory-testing circuit comprises: a test controller and association adjustment circuitry configurable by the test controller to associate another one or more reference bit columns or one or more data bit columns with the data bit columns in the read operation. The test controller can determine whether the original one or more reference bit columns have a defect based on results from the two different association.

Abstract: A method for ingesting data artifacts into a recovery pod may include: identifying, by a first controller, a data artifact for ingestion; pulling, by the first controller, the data artifacts into the first datastore; confirming, by second controller, that a first airlock between the first zone and the second zone and a second airlock between a third zone and the second zone are closed; opening, by the second controller, the first airlock; identifying, by the second controller, the data artifacts in the first datastore; pulling, by the second controller, the data artifacts into a second datastore; confirming that the first airlock and the second airlock are closed; opening, by the second controller, the second airlock; identifying, by a third controller, the data artifacts in the second zone datastore; pulling, by the third controller, the data artifacts into a third zone datastore; and closing, by the second controller, the second airlock.

Abstract: A storage network operates by: issuing a read threshold number of read slice requests to storage units of a set of storage units, where the read threshold number of read slice requests identifies a read threshold number of encoded slices of a set of encoded slices corresponding to a data segment; when one or more other encoded data slices of the read threshold number of encoded slices is not received within a time threshold, facilitating receiving a decode threshold number of encoded slices of the set of encoded slices; decoding the decode threshold number of encoded slices to produce recovered encoded data slices, wherein a number of the recovered encoded data slices corresponds to the read threshold number minus a number of the encoded slices received within the time threshold; and outputting the recovered encoded data slices and the encoded slices of the read threshold number of encoded slices received within the time threshold.

Abstract: A storage device and a data accessing method are disclosed, wherein the storage device includes a memory circuit and a control circuit. The memory circuit includes a plurality of multi-level cells, and each of the multi-level cells is configured to store at least a first bit, a second bit and a third bit in at least a first page, a second page and a third page. The control circuit is configured to read the first bits according to a one-time reading operation related to the first bits, read the second bits according to M-times reading operations related to the second bits, and read the third bits according to N-times reading operations related to the third bits, wherein the difference between M and N is less than or equal to one.

Abstract: A semiconductor memory device includes: a core unit including first and second memory cell groups; and a control circuit. The control circuit is configured to, in response to a read command including designation of a first address and designation of a second address, read first data from the first memory cell group, read second data from the second memory cell group, and output third data and fourth data in parallel. The first and second addresses correspond to the first and second memory cell groups, respectively. The designation of the second address is made after the designation of the first address. The third data corresponds to the read first data. The fourth data corresponds to the read second data.

Abstract: A method can include receiving a request to read data from a block of a memory device, identifying a block family associated with the block of the memory device, identifying a voltage distribution parameter value associated with the block family, wherein the voltage distribution parameter value reflects an aggregate value of a corresponding voltage distribution associated with a plurality of memory cells of the block family, and determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the set of read levels corresponds to a respective voltage distribution of at least one memory cell comprised by the block of the memory device. The block family can be identified using a data structure that maps block identifiers to corresponding block family identifiers. The voltage distribution parameter value can be identified using a data structure that maps block family identifiers to corresponding voltage parameter values.

Abstract: The present disclosure generally relates to a codeword format for data storage and to methods and circuits for generating a codeword based on data to be written in memory and extracting data from a codeword read from memory. In an example, an integrated circuit includes a memory system and a controller circuit. The controller circuit is communicatively coupled to the memory system and is configured to: receive multi-bit data; generate a codeword based on the multi-bit data; and transmit to the memory system the codeword for writing to memory. The codeword has a format that includes first bit positions for the multi-bit data, second bit positions for a bitwise inversion of the multi-bit data, a third bit position for an odd parity value, and a fourth bit position for an even parity value. The odd and even parity values indicate an odd and even parity, respectively, of the multi-bit data.

Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a storage controller. The storage controller includes a command and address generator, an error detection module, and an interface circuit. The command and address generator generates a first command, an address, and a second command, the second command including an error detection signal for detecting a communication error in the first command and the address. The error detection module generates the error detection signal from the first command and the address. The interface circuit sequentially transmits the first command, the address, and the second command to the non-volatile memory. The first command indicates a type of a memory operation to be performed in the non-volatile memory, and the second command corresponds to a confirm command.

Abstract: An error correction coding apparatus that performs error correction coding using, as an error correction code sequence, a frame of m bits×n symbols input in m-bit parallel, where m and n are positive integers, includes: an error correction coding circuit that performs error correction coding using, as information bits, m bits×n symbols including known bits assigned to a bit sequence specified in the error correction code sequence and generate error correction coded parity bits; and a selector that replaces the known bits of the error correction code sequence with the parity bits.

Abstract: A memory system includes a main memory, an auxiliary memory, a redundancy circuit, an extension control terminal, and a multiplexer. The main memory has a line width, and includes a write data input. The auxiliary memory has the same line width as the main memory, and includes a write data input. The redundancy circuit includes and input and an output. The input is coupled to the write data input of the main memory. The multiplexer includes a first input, a second input, a control input, and an output. The first input is coupled to the write data input of the main memory. The second input is coupled to the output of the redundancy circuit. The control input is coupled to the extension control terminal. The output of the multiplexer is coupled to the write data input of the auxiliary memory.

Abstract: A system and method for managing a reduction in capacity of a memory sub-system. An example method involving a memory sub-system: detecting a failure of at least one memory device of the set, wherein the failure affects stored data; notifying a host system of a change in a capacity of the set of memory devices; receiving from the host system an indication to continue at a reduced capacity; and updating the set of memory devices to change the capacity to the reduced capacity.

Abstract: A display device includes an external memory device which stores a first integrated circuit (“IC”) driving information, an internal memory device which stores a second IC driving information generated by copying the first IC driving information, a buffer which receives the second IC driving information and detects an electrostatic discharge current, an error correction code calculator which determines a first error correction code of the first IC driving information and a second error correction code of the second IC driving information when the electrostatic discharge current is detected, and an error correction code comparator which compares the first error correction code and the second error correction code. The internal memory device selectively updates the second IC driving information to the first IC driving information based on a result of a comparison of the first error correction code and the second error correction code.