Abstract: Surface control apparatuses including an imaging member having a charge retentive surface for developing an electrostatic latent image thereon. The imaging member including a substrate, a photoconductive layer disposed on the substrate, and a surface control (SC) layer disposed on the outer surface of the imaging member. Image forming apparatuses having such surface control apparatuses installed and methods of reducing print defects using such image forming apparatuses.

Abstract: A Bi1-xSbx thin film is provided that includes a Dirac-cone with different degrees of anisotropy in their electronic band structure by controlling the stoichiometry, film thickness, and growth orientation of the thin film, so as to result in a consistent inverse-effective mass tensor including non-parabolic or linear dispersion relations.

Abstract: An electroactive material for use in an electrochemical cell, like a lithium-ion battery, is provided. The electroactive material comprises lithium titanate oxide (LTO) and has a surface coating with a thickness of less than or equal to about 30 nm that suppresses formation of gases within the electrochemical cell. Methods for making such materials and using such materials to suppress gas formation in electrochemical cells are likewise provided.

Abstract: The invention provides a graphene device structure and a method for manufacturing the same, the device structure comprising a graphene layer; a gate region in contact with the graphene layer; semiconductor doped regions formed in the two opposite sides of the gate region and in contact with the graphene layer, wherein the semiconductor doped regions are isolated from the gate region; a contact formed on the gate region and contacts formed on the semiconductor doped regions. The on-off ratio of the graphene device is increased through the semiconductor doped regions without increasing the band gap of the graphene material, i.e., without affecting the mobility of the material or the speed of the device, thereby increasing the applicability of the graphene material in CMOS devices.

Abstract: A nonwoven web of fibers that have a number average diameter of less than 1 micron. The web can have a Poisson Ratio of less than about 0.8, a solidity of at least about 20%, a basis weight of at least about 1 gsm, and a thickness of at least 1 micrometer.

Abstract: The present invention provides a process for producing pristine or non-oxidized nano graphene platelets (NGPs) that are highly conductive. The process comprises: (i) subjecting a graphitic material to a supercritical fluid at a first temperature and a first pressure for a first period of time in a pressure vessel and then (ii) rapidly depressurizing the fluid at a fluid release rate sufficient for effecting exfoliation of the graphitic material to obtain the NGP material. Conductive NGPs can be used as a conductive additive in transparent electrodes for solar cells or flat panel displays (e.g., to replace expensive indium-tin oxide), battery and supercapacitor electrodes, and nanocomposite for electromagnetic wave interference (EMI) shielding and static charge dissipation, etc.

Abstract: An electrically conductive multilayer stack including a first metal oxide layer including titanium oxide, a metal layer on the first metal oxide layer, and a second metal oxide layer including titanium oxide on the metal layer, at least one of the first metal oxide layer and the second metal oxide layer including a first region, a second region on the first region, and a third region on the second region, the first region and the third region each having a higher oxygen concentration than that of the second region is disclosed. Methods of manufacturing an electrically conductive multilayer stack are also disclosed.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a layered type lithium transition metal oxide. A material of the coating layer is a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.

Abstract: A thermal transpiration device and method of making the same. The device includes a pair of membranes having predetermined thicknesses in order to provide the device with strength and rigidity. The thickness of a portion of each membrane is reduced in the area where thermal transpiration occurs in order to optimize the effectiveness of the thermal transpiration device without scarifying structural integrity of the device.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a layered type lithium nickel cobalt manganese oxide. The coating layer comprises a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a spinel type lithium manganese oxide. The coating layer comprises a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A catalyst structure for an electrochemical cell includes a catalyst support structure, catalyst particles and an outer carbide film. The catalyst particles are deposited on the catalyst support structure. The outer carbide film is formed on the catalyst support structure. The outer carbide film surrounds the catalyst particles.

Abstract: Apparatus, systems and methods for processing covers for electronic devices are disclosed. In one embodiment, oleophobic coatings can be deposited on the covers. Oleophobicity of the coatings can be monitored. In one embodiment, glass members can pertain to cover glass for housings of the electronic devices.

Abstract: Disclosed herein is a sequential functionalization methodology for the covalent modification of nanotubes with between one and four repeat units of a polymer. Covalent attachment of oligomer units to the surface of nanotubes results in oligomer units forming an organic sheath around the nanotubes, polymer-functionalized-nanotubes (P-NTs). P-NTs possess chemical functionality identical to that of the functionalizing polymer, and thus provide nanoscale scaffolds which may be readily dispersed within a monomer solution and participate in the polymerization reaction to form a polymer-nanotube/polymer composite. Formation of polymer in the presence of P-NTs leads to a uniform dispersion of nanotubes within the polymer matrix, in contrast to aggregated masses of nanotubes in the case of pristine-NTs.

Abstract: A semiconductor-on-insulator structure and a method of forming the silicon-on-insulator structure including an integrated graphene layer are disclosed. In an embodiment, the method comprises processing a silicon material to form a buried oxide layer within the silicon material, a silicon substrate below the buried oxide, and a silicon-on-insulator layer on the buried oxide. A graphene layer is transferred onto the silicon-on-insulator layer. Source and drain regions are formed in the silicon-on-insulator layer, and a gate is formed above the graphene. In one embodiment, the processing includes growing a respective oxide layer on each of first and second silicon sections, and joining these silicon sections together via the oxide layers to form the silicon material. The processing, in an embodiment, further includes removing a portion of the first silicon section, leaving a residual silicon layer on the bonded oxide, and the graphene layer is positioned on this residual silicon layer.

Abstract: The present invention relates to negative-electrode active material for rechargeable lithium battery comprising: a core comprising material capable of doping and dedoping lithium; and, a carbon layer formed on the surface of the core, wherein the carbon layer has a three dimensional porous structure comprising nanopores regularly ordered on the carbon layer with a pore wall of specific thickness placed therebetween.

Abstract: In one embodiment, a magnetic head includes a sensor stack of thin films including a free layer; a hard bias structure comprising a first foundation layer, a second foundation layer formed on the first foundation layer and a hard bias layer formed above the second foundation layer, wherein portions of the first and second foundation layers positioned along a side wall of the sensor stack have a discrete island structure. Additional embodiments are also disclosed.

Abstract: A filtering film structure includes a film, a conductive layer and a dielectric layer. The film includes a plurality of holes. The conductive layer is disposed on the inner surface of the holes, and the dielectric layer is disposed on the conductive layer. When applying a voltage to the conductive layer, an electrical charge layer forms on the surface of the dielectric layer.

Abstract: Optical resonators that are enhanced with photoluminescent phosphors and are designed and configured to output light at one or more wavelengths based on input/pump light, and systems and devices made with such resonators. In some embodiments, the resonators contain multiple optical resonator cavities in combination with one or more photoluminescent phosphor layers or other structures. In other embodiments, the resonators are designed to simultaneously resonate at the input/pump and output wavelengths. The photoluminescent phosphors can be any suitable photoluminescent material, including semiconductor and other materials in quantum-confining structures, such as quantum wells and quantum dots, among others.

Abstract: A capping layer is formed over a hardmask layer to increase the etch resistance and overall performance of the hardmask layer. Embodiments include forming a hardmask layer over a substrate and forming a capping layer on the hardmask layer, the capping layer including a stack of at least two nanolayers.

Abstract: The present invention provides a modified curing agent for a thermosetting resin, such as epoxy resin. As one example, the epoxy curing agent comprises: (a) multiple nano graphene platelets; (b) a chemical functional group having multiple ends with a first end being bonded to a nano graphene platelet and at least a second end reactive with the epoxy resin; and (c) reactive molecules acting as a primary cross-linking agent for the epoxy resin; wherein the nano graphene platelet content is no less than 0.01% by weight based on the total weight of the modified curing agent. A modified curing agent containing reactive molecule-functionalized NGPs enable excellent dispersion of NGP in a resin matrix and the resulting nanocomposites exhibit much better properties than those of corresponding nanocomposites prepared by directly mixing dried NGPs with the thermosetting resins.

Abstract: A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500° C., where the annealing converts the non-conducting amorphous carbon disposed under the transition metal to conducting amorphous carbon. A portion of the pattern of the transition metal is removed from the surface of the substrate to expose the conducting amorphous carbon.

Abstract: The present disclosure provides solutions to probing an interface. With a noninvasive measuring device provided in one embodiment of the disclosure, an acoustic wave whose frequency is higher than approximately 300 GHz is generated to propagate in a buffering film. With measuring the reflection from the interface of an object to be measured interfacing with the buffering film, it is possible in one embodiment of the disclosure that at least one physical property of the interface may be analyzed, preferably with approximately 0.3 nm resolution.

Abstract: In a method for forming a device, a (110) silicon substrate is etched to form first trenches in the (110) silicon substrate, wherein remaining portions of the (110) silicon substrate between the first trenches form silicon strips. The sidewalls of the silicon strips have (111) surface orientations. The first trenches are filled with a dielectric material to from Shallow Trench Isolation (STI) regions. The silicon strips are removed to form second trenches between the STI regions. An epitaxy is performed to grow semiconductor strips in the second trenches. Top portions of the STI regions are recessed, and the top portions of the semiconductor strips between removed top portions of the STI regions form semiconductor fins.

Abstract: Present invention relates to a method for forming a nanofiltration hollow fiber membrane comprising a poly(amide-imide) (PAI) hollow fiber substrate having a polyethyleneimine (PEI)-cross-linked PAI surface layer. This membrane is suitable for forward osmosis applications. The method comprises contacting the PAI hollow fiber substrate with an aqueous solution of polyethyleneimine (PEI) under conditions suitable for cross-linking PAI in the surface layer of the PAI hollow fiber substrate by PEI.

Abstract: An anti-reflection coat includes an intermediate layer and a low refractive index layer sequentially stacked on a substrate, and preventing the reflection of incident light by optical interference effect, wherein the low refractive index layer is a film formed on the surface of the intermediate layer by a wet film formation method using a coating liquid including layer-constituting raw materials which includes hollow silica particles adhering each other with a binder, and the intermediate layer is a layer mainly composed of an organometallic compound which adheres well to the binder and having wettability to the coating liquid; and provides an optical device including the anti-reflection coat.

Abstract: Disclosed is a membrane electrode assembly with enhanced hydrophobicity and a method for manufacturing the same. In particular, a nano pattern with a high aspect ratio is formed in a catalyst support on the surface of a catalyst layer constituting the membrane electrode assembly using plasma etching. A hydrophobic thin film is then formed on the nano pattern formed in the catalyst support.

Abstract: A conformal coating that resists fouling by waterborne contamination in aquatic environments, a method for fabricating the coating, and a filter having such a coating are disclosed. The coating comprises a hydrophilic polymer and a surfactant wherein the surfactant undergoes a phase change upon exposure to a saline solution. Also disclosed are in situ methods for regenerating anti-fouling filters having the fouling resistant coating.

Abstract: A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.

Abstract: A method of depositing a thin gold coating on bipolar plate substrates for use in fuel cells includes depositing a gold coating onto at least one surface of the bipolar plate substrate followed by annealing the gold coating at a temperature between about 200° C. to 500° C. The annealed gold coating has a reduced porosity in comparison with a coating which has not been annealed, and provides improved corrosion resistance to the underlying metal comprising the bipolar plate.

Abstract: An organic light emitting display device includes a substrate; a first electrode layer formed on the substrate; an emission structure layer formed on the first electrode layer; an electron injection layer (EIL) formed immediately on the emission structure layer and comprising a composite layer of LiF:Yb; and a second electrode layer formed on the EIL.

Abstract: Provided are a meta-material and a method of fabricating the same. the metal-material may include a substrate, a metal layer on the substrate, and an active gain medium layer on the metal layer. The active gain medium layer and the metal layer may be configured to define hole patterns that may be periodically arranged to have a space smaller than a wavelength of an ultraviolet light, such that the active gain medium layer and the metal layer exhibit a negative refractive index in a wavelength region of the ultraviolet light.

Abstract: A semiconductor device and a method of fabricating a semiconductor device, wherein the method includes forming, on a substrate, a plurality of planarized fin bodies to be used for customized fin field effect transistor (FinFET) device formation; forming a nitride spacer around each of the plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film. The fabricated semiconductor device is adapted to be used in customized applications as a customized semiconductor device.

Abstract: Methods of manufacturing a solar cell module are provided. The method may include forming lower electrodes on a substrate, forming a light absorption layer on the lower electrodes and the substrate, patterning the light absorption layer to form a trench exposing the lower electrodes, and forming window electrodes using a conductive film. The conductive film extends from a top surface of the light absorption layer to a bottom of the trench along one-sidewall of the trench and is divided at another-sidewall of the trench.

Abstract: A fusion fuel capsule is disclosed having a substantially spherical ablator shell. The interior surface of the shell is lined with a nanoporous scaffold layer wetted with either a fully or partially liquid mixture of deuterium and tritium.

Abstract: Disclosed herein are a method of generating a two-dimensional hole gas (2DHG) using a type-2 quantum well formed using semiconductors with different electron affinities or band gap, and a high-speed p-type semiconductor device using the 2DHG. To this end, the method includes providing a semiconductor substrate; growing a first semiconductor layer on the semiconductor substrate, growing a second semiconductor layer with a different electron affinity or band gap from the first semiconductor layer on the first semiconductor layer, and growing a third semiconductor layer with a different electron affinity or band gap from the second semiconductor layer, thereby forming a type-2 quantum well; and forming a p-type doping layer in the vicinity of the type-2 quantum well, thereby generating the 2DHG.

Abstract: A solar power source is a multi-layer structure consisting of photovoltaic and quantum well thermoelectric modules in electrical contact with, but thermally insulating from, each other. The structure generates power when focused solar energy is directed at the photovoltaic module which generates power, heats up, and subsequently generates a thermal gradient in the thermoelectric module which generates additional power. The thermoelectric module may generate additional electrical energy using the Seebeck effect, or may cool the photovoltaic module using the Peltier effect.

Abstract: Metallic dry toner particles are prepared by dry blending resin particles with non-conductive metal oxide particles to form a dry blend. This dry blend is melt extruded under low shear conditions to form an extruded composition that is broken up into metallic dry toner particles. Each metallic dry toner particle consists essentially of a polymeric binder phase formed from the resin particles, and the non-conductive metal oxide particles dispersed within the polymeric binder phase. The metallic dry toner particles have a mean volume weighted diameter (Dvol) before fixing of 15 ?m to 40 ?m, and the non-conductive metal oxide particles are present in an amount of 20 to 50 weight %. The ratio of the metallic dry toner particle Dvolto the average equivalent circular diameter (ECD) of the non-conductive metal oxide particles in the metallic dry toner particles is greater than 0.1 and to 10.

Abstract: A method of forming a strained semiconductor channel, comprising: forming a relaxed SiGe layer on a semiconductor substrate; forming a dielectric layer on the relaxed SiGe layer and forming a sacrificial gate on the dielectric layer, wherein the dielectric layer and the sacrificial gate form a sacrificial gate structure; depositing an interlayer dielectric layer, which is planarized to expose the sacrificial gate; etching to remove the sacrificial gate and the dielectric layer to form an opening; forming a semiconductor epitaxial layer by selective semiconductor epitaxial growth in the opening; depositing a high-K dielectric layer and a metal layer; and removing the high-K dielectric layer and metal layer covering the interlayer dielectric layer by planarizing the deposited metal layer and high-K dielectric layer to form a metal gate. A semiconductor device manufactured by this process is also provided.

Abstract: The present invention provides molybdenum and tungsten nanostructures, for example, nanosheets and nanoparticles, and methods of making and using same, including using such nanostructures as catlysts for hydrogen evolution reactions.

Abstract: Cured fluoroelastomer compositions containing a phyllosilicate of the formula Mgx Si7-x O(28-2x)/2-(y/2) (OH)y, wherein x=1 to 5 and y=0 to (28-2x), said phyllosilicate having an average length of at least 50 nm in at least one dimension and an aspect ratio >3:1 are disclosed.

Abstract: A graphene substrate is doped with one or more functional groups to form an electronic device.

Abstract: A multi-mode interference includes a core portion suitable, at any point, for propagating an optical signal having multiple spatial modes. The core portion includes a shifting section for shifting phases of the spatial modes of the optical signal.

Abstract: The invention relates generally to a nanolaminate structure involving Al2O3 thin films as a main component. The nanolaminate is used between a top electrode and a bottom electode to form a capacitor. The naonolaminate layer comprises alternating layers of Al2O3 and TiO2 and an interfacial layer.

Abstract: Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.

Abstract: A negative electrode (10) for a lithium secondary battery, including a negative electrode collector (20), and a negative electrode active substance layer (30) that is supported on the negative electrode collector (20) and includes carbon nanowalls (32) which are formed on the negative electrode collector (20), and a negative electrode active substance (36) which is supported on the carbon nanowalls (32).

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract: A stacked electrode of an embodiment includes: a multi-layered graphene film and a metal wiring formed thereon, wherein the metal wiring contains randomly oriented metal nanowires, the multi-layered graphene film contains a laminate of graphene sheets, the graphene sheets each contain an aggregate of graphene plates, and the graphene plates have an average area of (A+B)2 nm2 or more, wherein A (nm) represents the average diameter of the metal nanowires, B (nm) satisfies the equation (1) of B2/(A+B)2=(1?X), and X represents the ratio of the area of the metal nanowires projected in the stacking direction of the stacked electrode.

Abstract: A longer-lasting lithium battery anode includes a current collector, an anode active material layer, and a protective film. The anode active material layer is coated on the current collector. The protective film is coated on the anode active material layer, and the protective film consists of inorganic particles.