Abstract: Semiconductor devices are formed with a thin layer of fully strain relaxed epitaxial silicon germanium on a substrate. Embodiments include forming a silicon germanium (SiGe) epitaxial layer on a semiconductor substrate, implanting a dopant into the SiGe epitaxial layer, and annealing the implanted SiGe epitaxial layer.

Abstract: Magnetic tunnel junction transistor devices and methods for operating and foaming magnetic tunnel junction transistor devices. In one aspect, a magnetic tunnel junction transistor device includes a first source/drain electrode, a second source/drain electrode, a gate electrode, and a magnetic tunnel junction disposed between the gate electrode and the second source/drain electrode. The magnetic tunnel junction includes a magnetic free layer that longitudinally extends between, and is overlapped by, the first and second source/drain electrodes. The gate electrode completely overlaps the magnetic free layer between the first and second source/drain electrodes. The magnetic tunnel junction transistor device switches a magnetization orientation of the magnetic free layer by application of a gate voltage to the gate electrode, thereby changing a resistance between the first and second source/drain electrodes through the magnetic free layer.

Abstract: Provided are a light emitting device, a method of fabricating the light emitting device, and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a first conductive layer under the second conductive type semiconductor layer and electrically connected to the first conductive type semiconductor layer, a second conductive layer under the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer, an insulation layer between the first conductive layer and the second conductive layer, and a tunnel barrier under the second conductive type semiconductor layer and disposed between the first conductive layer and the second conductive layer.

Abstract: Semiconductor devices are formed with a nano-electro-mechanical system (NEMS) logic or memory on a bulk substrate. Embodiments include forming source/drain regions directly on a bulk substrate, forming a fin connecting the source/drain regions, forming two gates, one on each side of the fin, the two gates being insulated from the bulk substrate, and forming a substrate gate in the bulk substrate. The fin is separated from each of the two gates and the substrate gate with an air gap.

Abstract: Methods for producing carbon films are disclosed herein. The methods include treating a carbon nanostructure with one or more dispersing agents, filtering the solution through a filter membrane to form the carbon film, releasing the carbon film from the filter membrane, and transferring the film onto a desired substrate without the use of sonication. Carbon films formed by said methods are also disclosed herein.

Abstract: In accordance with the purpose(s) of the present disclosure, as embodied and broadly described herein, embodiments of the present disclosure, in one aspect, relate to methods of making nanostructures (e.g., nanoparticles, nanofibers), systems for making nanostructures, and the like.

Abstract: An electrode for reduction of an oxidant including a phosphorus-doped carbon-containing catalyst represented by the chemical formula CNxPy, where x is from 0 to about 10 wt. % and y is from about 1 ppm to about 10 wt. %. A device for producing electricity by facilitating an electrochemical reaction between a fuel and an oxidant. The device including a first electrode for oxidizing the fuel to produce protons and electrons. The device further includes a second electrode in electrical communication with the first electrode when electrically connected to the external circuit. The second electrode includes a phosphorus-doped carbon-containing catalyst for reducing the oxidant and is represented by the chemical formula CNxPy, where x is from 0 to about 10 wt. % and y is from about 1 ppm to about 10 wt. %. The device further includes an electrolyte, such as, a membrane, separating the first electrode from the second electrode.

Abstract: Disclosed are an oxide thin film transistor resistant to light and bias stress, and a method of manufacturing the same. The method includes forming a gate electrode on a substrate; forming a gate insulating layer on an upper part including the gate electrode; forming a source electrode and a drain electrode on the insulating layer; forming an active layer insulated from the gate electrode by the gate insulating layer and formed of an oxide semiconductor and a diffusion barrier film; and forming a protective layer on a portion of the source electrode and drain electrode and the upper part including the active layer, wherein the diffusion barrier film reduces movement of holes and prevents ionized oxygen vacancies from being diffused.

Abstract: A surface-enhanced Raman spectroscopy substrate device, including a base substrate, a single or multiple layered nanostructure that contains metals, and a plasma coating. The nanostructure metal is selected from the group including silver, gold, platinum, copper, titanium, chromium, and combinations thereof. The plasma coating has a thickness of 1-200 nm and may locate on the nanostructure layer or on the base substrate. The plasma coating can precisely control the surface characteristics, including surface energy, hydrophilicity, and contact angle, of the SERS device and may then help to regulate the SERS substrate with well defined and uniform water/oil contact angle with small standard deviation. The water contact angle of the SERS substrate may range from 20 to 140 degrees.

Abstract: A base coat coating composition which is able to suppress cracking of a metal thin film, even when a tough top coat layer capable of satisfactorily protecting the metal thin film is formed on the metal thin film, and even when a heat resistance test is performed, as well as a composite film and a method for producing the composite film. Specifically, a base coat coating composition used for undercoating a metal thin film formed on a metal substrate, and containing a coating film-forming component which contains at least 30% by mass of an epoxy (meth)acrylate having a cyclic structure and has an average molecular weight between crosslinks of 180 to 1,000, as well as a composite film having a base coat layer obtained from the base coat coating composition, and a method for producing the composite film.

Abstract: There is provided an SOS substrate with reduced stress. The SOS substrate is a silicon-on-sapphire (SOS) substrate comprising a sapphire substrate and a monocrystalline silicon film on or above the sapphire substrate. The stress of the silicon film of the SOS substrate as measured by a Raman shift method is 2.5×108 Pa or less across an entire in-plane area of the SOS substrate.

Abstract: A process for producing nanocomposite materials for use in batteries includes electroactive materials are incorporated within a nanosheet host material. The process may include treatment at high temperatures and doping to obtain desirable properties.

Abstract: A method for mitigating eutrophication in a water body includes: adding a treating agent that contains nanosilicate platelets to an eutrophic water body, such that algae and suspended substances in the eutrophic water body are adsorbed by the nanosilicate platelets.

Abstract: In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

Abstract: The invention provides for a nanostructured silicon or holey silicon (HS) that has useful thermoelectric properties. The invention also provides for a device comprising the nanostructured silicon or HS. The HS can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.

Abstract: A top-emission organic light-emitting diode (OLED) structure is provided. The top-emission OLED structure includes a substrate, a reflective layer, a first conductive layer, a second conductive layer and an emissive layer. The reflective layer is disposed above the substrate. The reflective layer includes a first material, a second material and a third material. The first material is aluminum (Al), the second material is nickel (Ni), and the third material is selected form a group consisting of group 13 elements and group 14 elements of a periodic table of elements. The first conductive layer is disposed above the reflective layer. The second conductive layer is disposed above the first conductive layer. The emissive layer is disposed between the first conductive and the second conductive layer.

Abstract: A negative electrode for a lithium secondary battery that includes an organic-inorganic hybrid protective layer where the lithium ion conductivity of a polymer included in the organic-inorganic hybrid protective layer is about 10?4 S/cm or less, a method of manufacturing the same, and a lithium secondary battery employing the same.

Abstract: A semiconductor optical modulator with the Mach-Zender type is disclosed. The optical modulator of the invention cab driven by a single phase signal and reduce the chirping of the modulated light. Two waveguides of the Mach-Zender modulator each including an active layer showing the exciton resonance in the refractive index are connected with a resistor. The driving signal is applied to one of the waveguides, while, the signal is applied to the other waveguide through the resistor where the other waveguide is grounded through a resistor. Adjusting the resistance of two resistors and the amplitude of the applied signal, the Mach-Zender modulator shows a substantial modulation degree with substantially no chirping characteristic.

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Abstract: Devices are formed with an oxide liner and nitride layer before forming eSiGe spacers. Embodiments include forming first and second gate stacks on a substrate, forming an oxide liner over the first and second gate stacks, forming a nitride layer over the oxide liner, forming a resist over the first gate stack, forming nitride spacers from the nitride layer over the second gate stack, forming eSiGe source/drain regions for the second gate stack, subsequently forming halo/extension regions for the first gate stack, and independently forming halo/extension regions for the second gate stack. Embodiments include forming the eSiGe regions by wet etching the substrate with TMAH using the nitride spacers as a soft mask, forming sigma shaped cavities, and epitaxially growing in situ boron doped eSiGe in the cavities.

Abstract: An object of the present invention is to provide an exhaust emission control device of an internal combustion engine which is used in purification of exhaust gas and achieves both high catalytic activity at low temperature and high durability at high temperature. In an exhaust emission control device of an internal combustion engine of the present invention, a catalyst is disposed in an exhaust path of the internal combustion engine, at least one kind of the catalyst is noble metal supporting silicon carbide particles, and the noble metal supporting silicon carbide particles include a silicon oxide layer in which noble metal particles are supported on a surface of silicon carbide particles having an average primary particle diameter of 0.005 ?m or more and 5 ?m or less.

Abstract: A composite material including a carrier g of aluminum, an optically effective multi-layer system applied to a side (A) of the carrier. The system having at least 2 dielectric and/or oxidic layers, namely an upper layer and a lower, light-absorbing layer. The lower, light-absorbing layer contains a titanium-aluminum mixed oxide TiAlqOx and/or a titanium-aluminum makes nitride TiAlqNy and/or a titanium-aluminum mixed oxynitride TiAlqOxNy, while the upper layer is an oxidic layer made of titanium, silicon or tin of the chemical composition TiOz, SiOw, or SnOv, where the indices q, v, w, y and z each denote a stoichiometric or nonstoichiometric ratio.

Abstract: Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.

Abstract: A post-heat-treatable substrate with a thermochromic film. The post-heat-treatable substrate includes a base substrate, a thermochromic film coating the base substrate, an auxiliary film formed on at least one of the upper surface and the lower surface of the thermochromic film, and a sacrificial film formed between the thermochromic film and the auxiliary film. The sacrificial film is made of metal. Accordingly, the thermochromic material is prevented from agglomerating during post-heat-treatment of the substrate. The auxiliary film prevents oxygen and nitrogen from diffusing into the thermochromic film, so that high-temperature heat treatment, such as a process for tempering the substrate, a process for heat-strengthening the substrate and a process for forming the substrate to become curved, can be conducted on the substrate.

Abstract: A separator for a redox flow battery and a redox flow battery including the same, and the separator includes a cation conductive film and an anion conductive film disposed on either side of the cation conductive film.

Abstract: Nanocomposite compositions based on expandable thermoplastic polymers which comprise: a) a polymeric matrix produced by the polymerization of a base comprising one or more polymerizable monomers; b) 1-10% by weight, calculated with respect to the polymer (a), of an expanding agent englobed in the polymeric matrix; c) 0.004-15% by weight, calculated with respect to the polymer (a), of an athermanous filler comprising nano-scaled graphene plates with a thickness (orthogonal to the graphene sheet) not greater than 150 nm, an average dimension (length, width, or diameter) not greater than 10 micrometers and a surface area>50 m2/g.

Abstract: A device, in particular a cover panel for a display device or a monitor auxiliary panel or a surface for input devices, includes a substrate and a coating applied onto the substrate. The coating has a surface having a coefficient of friction in the range between approximately 0.01 and 0.12, in particular between approximately 0.02 and 0.1, or between approximately 0.03 and 0.09.

Abstract: A method for controlling surface morphology of a transparent conductive oxide film (TCO) is provided. A substrate is provided as a basis for forming a solar cell. Onto the substrate, a seed layer is deposited. Then, the method includes depositing the transparent conductive oxide film (TCO) above the seed layer. The seed layer is adapted to control the surface morphology of the transparent conductive oxide film. The surface of the transparent conductive oxide film is etched in order to provide a front contact of the solar cell.

Abstract: A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer 13, a reflecting structure 20, and a first electrode. The second semiconductor layer has a conductivity different from the first semiconductor layer. The active region is arranged between the first and second semiconductor layers. The transparent electrically-conducting layer 13 is arranged on or above the first semiconductor layer. The reflecting structure 20 is arranged on or above the transparent electrically-conducting layer 13. The first electrode is arranged on or above the reflecting structure 20, and electrically connected to the first semiconductor layer. The reflecting structure 20 includes at least a reflective layer 16. An intermediate layer 17 is interposed between the transparent electrically-conducting layer 13 and the reflecting structure 20.

Abstract: A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.

Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

Abstract: The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.

Abstract: A fuel cell catalyst layer includes first spaced apart strands extending longitudinally in a first direction, second spaced apart strands extending longitudinally in a second direction, the first and second spaced apart strands collectively defining openings bounded by an adjacent pair of the first spaced apart strands and an adjacent pair of the second spaced apart strands, a number of wires extending longitudinally in a third direction from one of the first and second spaced apart strands, the wires including an organic material, and a catalyst contacting at least a portion of the plurality of wires.

Abstract: An integrated circuit is disclosed that includes a split gate memory device comprising a select gate is located over a substrate. A charge storage layer includes a layer of discrete storage elements and a layer of high-k dielectric material covering at least one side of the layer of discrete storage elements. At least a portion of a control gate is located over the charge storage layer. The control gate includes a layer of barrier work function material and a layer of gate material located over the layer of barrier work function material.

Abstract: An electrolyte for a lithium secondary battery including a lithium salt, a nonaqueous organic solvent, and an additive, in which the additive is composed of one or more compounds including a purinone or a purinone derivative. The lithium secondary battery with improved life and high-temperature storage may be provided by using the electrolyte for a lithium secondary battery according to an embodiment of the present invention.

Abstract: A semiconductor fabrication method is provided, in which a protective layer is deposited on the dummy wafer such that the protective layer fully encases the dummy wafer. Therefore, the dummy wafer will not be oxidized during thermal oxidation, thereby reducing dummy wafer consumption, decreasing production cost, avoiding particulate matter produced due to oxidation of the dummy wafer, and preventing the wafer to be oxidized from contamination.

Abstract: Conductive particles include silver particles and at least one coating material which is selected from silver alloys and silver composites and which covers the silver particles.

Abstract: A phase shift mask blank having, on a transparent substrate, a phase shift film including, as main components, a metal, silicon (Si) and nitrogen (N), having optical characteristics of a transmittance of equal to or greater than 9% and equal to or less than 30% with respect to a wavelength of the ArF excimer laser beam and a phase difference of equal to or greater than 150° and less than 180°, and a light-shielding film formed on the phase shift film. A thickness of the phase shift film is equal to or less than 80 nrn, a refractive index (n) with respect to the wavelength of the ArF excimer laser beam is equal to or greater than 2.3, and an extinction coefficient (k) is equal to or greater than 0.28.

Abstract: According to one embodiment, a photomask blank wherein a second film is stacked on a first film, the first film containing chromium and which is not substantially etched by the dry etching using fluorine and which is etchable by the dry etching using oxygen-containing chlorine, and the second film containing no chromium and which is etchable by dry etching using fluorine and dry etching using oxygen-containing chlorine.

Abstract: A composite resin material particle of the present invention includes: a resin material particle that is a material for producing a resin molding product; and a conductive nano-material, wherein a dispersion mixing layer, which is obtained by dispersedly mixing the conductive nano-material from the surface to the inside of the resin material particle, is formed over all of the surface or at least a part of the surface of the resin material particle, the conductive nano-material is dispersedly mixed within a resin material of the resin material particle in the dispersion mixing layer, and the whole of the dispersion mixing layer forms a conductive layer.

Abstract: A fluoropolymer coated film comprising polymeric substrate film and fluoropolymer coating on the polymeric substrate film. The fluoropolymer coating comprises fluoropolymer selected from homopolymers and copolymers of vinyl fluoride and homopolymers and copolymers of vinylidene fluoride polymer blended with compatible adhesive polymer comprising functional groups selected from carboxylic acid, sulfonic acid, aziridine, amine, isocyanate, melamine, epoxy, hydroxy, anhydride and mixtures thereof. The polymeric substrate film comprises functional groups on its surface that interact with the compatible adhesive polymer to promote bonding of the fluoropolymer coating to the substrate film.

Abstract: The preparation of graphene, mono-, bi- and multi-layers from graphite-based precursor materials, for example, pencil lead or graphite, by a method of mechanical thinning on the surface of a planar substrate with controlled roughness, followed by sonication in order to collect the graphene deposited on the substrate in a liquid medium. The bearing force during thinning by mechanical friction enables the number of graphene sheets deposited on the surface of the substrate to be controlled.

Abstract: A FinFET device with an independent control gate, including: a silicon-on-insulator substrate; a non-planar multi-gate transistor disposed on the silicon-on-insulator substrate, the transistor comprising a conducting channel wrapped around a thin silicon fin; a source/drain extension region; an independently addressable control gate that is self-aligned to the fin and does not extend beyond the source/drain extension region, the control gate comprising: a thin layer of silicon nitride; and a plurality of spacers.

Abstract: A semiconductor device having a non-volatile memory and a method of manufacturing the same are provided. The semiconductor device includes a base material and a stack structure. The stack structure disposed on the base material at least includes a tunneling layer, a trapping layer and a dielectric layer. The trapping layer is disposed on the tunneling layer. The dielectric layer has a dielectric constant and is disposed on the trapping layer. The dielectric layer is transformed from a first solid state to a second solid state when the dielectric layer undergoes a process.

Abstract: A nanoconverter or nanosensor is disclosed capable of directly generating electricity through physisorption interactions with molecules that are dipole containing organic species in a molecule interaction zone. High surface-to-volume ratio semiconductor nanowires or nanotubes (such as ZnO, silicon, carbon, etc.) are grown either aligned or randomly-aligned on a substrate. Epoxy or other nonconductive polymers are used to seal portions of the nanowires or nanotubes to create molecule noninteraction zones. By correlating certain molecule species to voltages generated, a nanosensor may quickly identify which species is detected. Nanoconverters in a series parallel arrangement may be constructed in planar, stacked, or rolled arrays to supply power to nano- and micro-devices without use of external batteries. In some cases breath, from human or other life forms, contain sufficient molecules to power a nanoconverter.

Abstract: A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.

Abstract: Methods and devices for an anode formed from coated carbon nanofibers are provided. The carbon nanofibers having a cone geometry are coated with a silicon layer and a protective silicon oxide layer. The resulting composite material is suitable for high-capacity electrodes in lithium ion batteries. The electrodes incorporating the coated carbon nanofibers have improved rate capacity and decreased initial cycle irreversibility.

Abstract: A PMOS transistor is disclosed which includes a nitrogen containing barrier to oxygen diffusion between a gate dielectric layer and a metal gate in the PMOS transistor, in combination with a low oxygen region of the metal gate in direct contact with the nitrogen containing barrier and an oxygen rich region of the metal gate above the low oxygen content metal region. The nitrogen containing barrier may be formed by depositing nitrogen containing barrier material on the gate dielectric layer or by nitridating a top region of the gate dielectric layer. The oxygen rich region of the metal gate may be formed by depositing oxidized metal on the low oxygen region of the metal gate or by oxidizing a top region of the low oxygen region of the metal gate.

Abstract: Current collectors and methods are provided that relate to electrodes that are useful in lithium polymer electrochemical cells. The provided current collectors include a metallic substrate, a substantially uniform nano-scale carbon coating, and an active electrode material. The coating has a maximum thickness of less than about 200 nanometers.