Abstract: It is made possible to cause spin inversion at a low current density which does not cause element destruction and to conduct writing with a small current. A magnetoresistance effect element includes: a magnetization pinned layer in which magnetization direction is pinned; a magnetic recording layer in which magnetization direction is changeable, the magnetization direction in the magnetization pinned layer forming an angle which is greater than 0 degree and less than 180 degrees with a magnetization direction in the magnetic recording layer, and the magnetization direction in the magnetic recording layer being inverted by injecting spin-polarized electrons into the magnetic recording layer; and a non-magnetic metal layer provided between the magnetization pinned layer and the magnetic recording layer.

Abstract: Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.

Abstract: A quantum processor may employ a heterogeneous qubit-coupling architecture to reduce the average number of intermediate coupling steps that separate any two qubits in the quantum processor, while limiting the overall susceptibility to noise of the qubits. The architecture may effectively realize a small-world network where the average qubit has a low connectivity (thereby allowing it to operate substantially quantum mechanically) but each qubit is within a relatively low number of intermediate coupling steps from any other qubit. To realize such, some of the qubits may have a relatively high connectivity, and may thus operate substantially classically.

Abstract: A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially a polymer containing triazole derivatives, a spin transition phenomenon support material or a spin transition molecular complex; and a method for manufacturing a molecular memory including covering a substrate with a conductive layer; coating a dielectric material on the conductive layer; covering the dielectric material with the conductive layer; impregnating by immersion a buffer in an inking solution of hexadecanethiol; drying and washing the impregnated buffer; creating a protective monolayer on the conductive layer by application of the impregnated, dried and washed buffer; and creating a chemical etching on the sample.

Abstract: Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.

Abstract: A transistor device may comprise a source having a first ferromagnetic contact thereto, a drain having a second ferromagnetic contact thereto, an electrically conductive gate positioned over a channel region separating the source and the drain, and an electrically insulating layer disposed between the gate and the channel region. The first and second ferromagnetic contacts have anti-parallel magnetic orientations relative to each other. The electrically insulating layer includes a number of paramagnetic impurities each having two spin states such that electrons interacting with the paramagnetic impurities cause the paramagnetic impurities to flip between the two spin states.

Abstract: A racetrack memory device facilitates the manipulation of a series of domain walls along the racetrack. The racetrack is designed so that the domain wall energy increases and decreases in a continuous fashion between adjacent pinning sites, so that a domain wall does not become stuck between them. The variation in the domain wall energy along the racetrack can be provided by continuous variations of the racetrack's width (while maintaining constant thickness) and/or cross-sectional area (in which the racetrack dimensions are varied in both directions perpendicular to the length of the racetrack). Alternatively, this variation in domain wall energy may be provided by varying the magnetic properties of the racetrack along the racetrack while otherwise keeping the shape and size of the racetrack unchanged. In addition, variations of the racetrack's composition and/or shape can be used.

Abstract: Disclosed herein is a spin transistor including: a semiconductor substrate having a channel layer formed therein; first and second electrodes which are formed to be spaced apart from each other on the substrate at a predetermined distance along a longitudinal direction of the channel layer; a source and drain which include magnetized ferromagnetic materials and are formed to be spaced apart form each other between the first electrode and the second electrode at a predetermined distance along the longitudinal direction of the channel layer; and a gate which is formed on the substrate between the source and the drain, and adjusts spin orientations of electrons passing through the channel layer, wherein the electrons passing through the channel layer are spin-aligned at a lower side of the source by a stray magnetic field of the source and spin-filtered at a lower side of the drain by a stray field of the drain.

Abstract: A system and method for characterizing noise in a quantum system includes determining pulse sequences for unitary twirling operations. Twirling processes are applied to a quantum system to calibrate errors and to determine channel parameters. Noise characteristics are determined from calibration data collected to calibrate the errors and to determine the channel parameters. The noise characteristics are characterized to determine if the noise is independent relaxation of qubits or collective relaxation of qubits.

Abstract: A magnetic element includes a channel layer, a first magnetic electrode which is in contact with the channel layer, a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode, a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer, a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode, a first electrode which is connected to the first magnetic electrode, and a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode.

Abstract: A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer is sandwiched between the substrate and the free layer and is made of an insulating layer. The method uses a modified Landau-Lifshitz-Gilbert equation to obtain a critical current value as a function of exchange coupling constant. The critical current value is predictable under several external magnetic fields being applied. When the exchange coupling constant is proportionally varied, the critical current value is reduced to a third of its original value under an optimum state.

Abstract: A method for and system for training a connection network located between neuron layers within a multi-layer physical neural network. A multi-layer physical neural network can be formed having a plurality of inputs and a plurality outputs thereof, wherein the multi-layer physical neural network comprises a plurality of layers, wherein each layer comprises one or more connection networks and associated neurons. Thereafter, a training wave can be initiated across the connection networks associated with an initial layer of the multi-layer physical neural network which propagates thereafter through succeeding connection networks of succeeding layers of the neural network by successively closing and opening switches associated with each layer. One or more feedback signals thereof can be automatically provided to strengthen or weaken nanoconnections associated with each connection network.

Abstract: A quantum bit computation method includes operating a two-quantum-bit gate on quantum bits of a first physical system and a second physical system, second energy states of second physical systems except for the first physical system and the second physical system do not change, three energy states being represented by |0>, |1> and |3>, the two energy states being represented by |2> and |4>, energies of |2> and |4> being higher than energies of |0>, |1> and |3>, a transition frequency between |3> and |2> being equal to the resonance frequency, |0> and |1> representing quantum bits, flipping quantum bits of first physical systems after operating the two-quantum-bit gate, executing no operations by a time equal to a time for operating the two-quantum-bit gate, after flipping the quantum bits, and again flipping the quantum bits of the first physical systems after executing no operations.

Abstract: In an example, a determination circuit 5 determines whether an input waveform is a first waveform (=0) or a second waveform (=1). When magnetization switching is caused during writing, the second waveform (=1) having a large voltage change is outputted, and thus the determination circuit 5 determines that the output waveform is the second waveform, using threshold determination or the like. In another example, when an initial voltage V1 agrees with a voltage V2 stored by intentionally writing “0”, “0” is outputted; when V1 disagrees with V2, “1” is outputted. In the disagreement case, the written data is rewritten into the original data “1.

Abstract: A system for performing multi-dimensional quantum search, quantum computation, quantum memory, quantum storage, and quantum retrieval includes a structure and method for: enabling components and systems for quantum search, and more particularly to improved local and remote quantum computing and search components and systems; quantum memory component and systems; quantum storage components and systems; quantum retrieval components and systems; quantum logic gates; classical (non-quantum) search components and systems; integrated quantum-classical search components and systems; and integrated quantum-classical cryptosystems.

Abstract: A racetrack memory storage device moves domain walls along the racetrack in one direction only. The reading element can be positioned at one end of the racetrack (rather than in the middle of the racetrack). The domain walls are annihilated upon moving them across the reading element but their corresponding information is read into one or more memory devices (e.g., built-in CMOS circuits). The information can then be processed in circuits for computational needs and written back into the racetrack either in its original form (as it was read out of the racetrack) or in a different form after some computation, using a writing element positioned at the end of the racetrack opposite to the reading element. Such a racetrack can be built more simply and has greater reliability of operation than previous racetrack memory devices.

Abstract: An optical resonator includes a master resonator configured to resonate an electromagnetic wave, one structure or a pair of structures adjacent to each other, each of which is arranged at a position that overlaps one of resonance modes of the master resonator, is made up of a material in which a real part of a permittivity assumes a negative value, and an absolute value of the real part is larger than an absolute value of an imaginary part of the permittivity, and has a size which makes scattering that the electromagnetic wave suffers be Rayleigh scattering, and one or a plurality of particles, each of which is laid out near the structure by a distance smaller than the size of the structure.

Abstract: A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1), and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1<JC2, L1 is greater than about 300 nm, and L2 ranges from about 20 nm to about 200 nm. The device further comprises alternating magnetic domains of opposite directions that are separated by domain walls. The magnetic domains and domain walls are movable across the first and second ferromagnetic material layers upon application of a driving current. Correspondingly, data can be stored in the memory storage device as locations of the magnetic domains and domain walls.

Abstract: Nano-scale and multi-scale computational architectures using spin waves as a physical mechanism for device interconnection are provided. Solid-state spin-wave computing devices using nano-scale and multi-scale computational architectures comprised of a plurality of inputs and a plurality of outputs are described where such devices are configured to simultaneously transmit data elements from the inputs to the outputs by using spin-waves of differing frequencies. These devices include but are not limited to a spin-wave crossbar, a spin-wave reconfigurable mesh, a spin-wave fully-interconnected cluster, a hierarchical multi-scale spin-wave crossbar, a hierarchical multi-scale spin-wave reconfigurable mesh and a hierarchical multi-scale spin-wave fully-interconnected cluster.

Abstract: A MgO tunnel barrier is sandwiched between semiconductor material on one side and a ferri- and/or ferromagnetic material on the other side to form a spintronic element. The semiconductor material may include GaAs, for example. The spintronic element may be used as a spin injection device by injecting charge carriers from the magnetic material into the MgO tunnel barrier and then into the semiconductor. Similarly, the spintronic element may be used as a detector or analyzer of spin-polarized charge carriers by flowing charge carriers from the surface of the semiconducting layer through the MgO tunnel barrier and into the (ferri- or ferro-) magnetic material, which then acts as a detector. The MgO tunnel barrier is preferably formed by forming a Mg layer on an underlayer (e.g., a ferromagnetic layer), and then directing additional Mg, in the presence of oxygen, towards the underlayer.

Abstract: A system employs a plurality of physical qubits, each having a respective bias operable to up to six differentiable inputs to solve a Quadratic Unconstrained Binary Optimization problem. Some physical qubit couplers are operated as intra-logical qubit couplers to ferromagnetically couple respective pairs of the physical qubits as a logical qubit, where each logical qubit represents a variable from the Quadratic Unconstrained Binary Optimization problem.

Abstract: New kinds of nano-scale computational architectures using spin waves as a physical mechanism for device interconnection are described. A method for operating a logic device having a spin wave bus includes the step of receiving an input signal representing information. A spin wave is excited with the information coded in an aspect of the spin wave in response to receiving the input signal. The spin wave is propagated through a spin wave bus having an associated polarization. The information associated with the spin wave is determined in response to propagating the spin wave through the spin wave bus.

Abstract: Exemplary embodiments of detection and transmission arrangements are disclosed herein. For example, some of the disclosed embodiments comprise a splitter, a detector, first and second paths defined between the splitter and the detector, and a manipulation arrangement. In certain embodiments, the splitter is arranged to direct an incoming particle along the first or second path depending upon the value of a parameter of the incoming particle. In particular embodiments, the manipulation arrangement is located on at least one of the first and second paths, so that, if a particle in a superposition of values of the parameter impinges on the splitter and a wavefunction of the particle is directed along both the first and second paths, the manipulation arrangement will act on the wavefunction to allow interference, at or near the detector, between the portions of the wavefunction that were directed along the first and second paths.

Abstract: A quantum computer includes physical systems, included in an optical resonator, having at least four energy states, and in which letting |0>, |1>, |3>, and |2> be the four energy states, an energy of |2> is higher than energies of |0>, |1>, and |3>, a transition frequency of a |0>?|2> transition is equal to the resonance frequency, and |0> and |1> express a quantum bit, a first source emitting light that resonates with the optical resonator, a second source irradiating specific physical systems of the physical systems with light that couples |3> and |2>, a light detector detecting a photon emitted from the optical resonator, and a controller controlling the first source to irradiate the optical resonator with light and controlling the light detector to perform light detection during irradiation of the light that couples |3> and |2> from the second source to the specific physical systems.

Abstract: Methods and systems for modifying at least one synapse of a physicallelectromechanical neural network. A physical/electromechanical neural network implemented as an adaptive neural network can be provided, which includes one or more neurons and one or more synapses thereof, wherein the neurons and synapses are formed from a plurality of nanoparticles disposed within a dielectric solution in association with one or more pre-synaptic electrodes and one or more post-synaptic electrodes and an applied electric field. At least one pulse can be generated from one or more of the neurons to one or more of the pre-synaptic electrodes of a succeeding neuron and one or more post-synaptic electrodes of one or more of the neurons of the physical/electromechanical neural network, thereby strengthening at least one nanoparticle of a plurality of nanoparticles disposed within the dielectric solution and at least one synapse thereof.

Abstract: A quantum logic gate is formed from multiple qubits coupled to a common resonator, wherein quantum states in the qubits are transferred to the resonator by transitioning a classical control parameter between control points at a selected one of slow and fast transition speeds, relative to the characteristic energy of the coupling, whereby a slow transition speed exchanges energy states of a qubit and the resonator, and a fast transition speed preserves the energy states of a qubit and the resonator.

Abstract: A novel and efficient method for polarization conversion, particularly from linear polarization to circular polarization, and, importantly, vice versa, is obtained using shapeanisotropic self-assembled quantum dots, which, having the advantage of extremely small size (nanometer scale), may be readily incorporated into photonic crystals and/or other optical components. Such devices also have the advantage of working in the absence of an applied magnetic field. Such devices also, when a voltage bias is applied, can be used to manipulate electron spin by manipulating light polarization in the same circuit, and vice versa. This permits a high degree of control for either or both of these in spintronics and/or optical devices, the biased quantum dot being used as a nanometer scale electro-optic modulator. Components utilizing the method and/or devices may be used as part of highly compact optical computing networks and/or spintronics systems for e.g.

Abstract: Apparatus and methods of performing fast single-qubit quantum gates using ultrafast femtosecond frequency chirped laser pulses are disclosed. The use of chirped pulses removes the demanding restrictions of prior art approaches and allows for the construction of fast quantum gates that operate at speeds on the of order several picoseconds. The apparatus includes two synchronized lasers (pump and Stokes) used to manipulate a qubit wave function in a select manner. Each laser system generates a train of optical pulses. Pulse pickers choose pump and Stokes pulses, which propagate though respective pulse shapers that apply necessary time-dependent phases. To achieve complete overlap between the pulses in time domain, necessary adjustments can be made by using an additional time delay line, which can be located in any path or in both paths.

Abstract: The present disclosure concerns a means to use at least a form of electromagnetic excitation or light-matter interactions in a structure or material having one or more addressable frequencies to generate the exchange of thermal, kinetic, electronic or photonic energy. In some implementations this provides a means to use electromagnetic excitation or light-matter interactions to influence, cause, control, modulate, stimulate or change the state or phase of electrical, magnetic, optical or electromagnetic charge, emission, conduction, storage or similar properties. The method could include the use of light-matter interactions to generate electromagnetic excitation or light-matter interactions and concentrate extremely localized field effects or concentrated plasmonic field effects to cause an exchange of energy states in a material or structure.

Abstract: A spin transistor includes a first conductive layer that is made of a ferromagnetic material magnetized in a first direction, and functions as one of a source and a drain; a second conductive layer that is made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction, and functions as the other one of the source and the drain. The spin transistor also includes a channel region that is located between the first conductive layer and the second conductive layer, and introduces electron spin between the first conductive layer and the second conductive layer; a gate electrode that is located above the channel region; and a tunnel barrier film that is located between the channel region and at least one of the first conductive layer and the second conductive layer.

Abstract: This invention concerns quantum error correction, that is the correction of errors in the transport and processing of qubits, by use of logical qubits made up of a plurality of physical qubits. The process takes place on a spatial array of physical qubit sites arranged with a quasi-2-dimensional topology having a first line of physical qubit sites and second line of physical qubit sites, where the first and second lines are arranged in parallel, with the sites of the first line in registration with corresponding sites in the second line. Between the first and second lines of physical qubit sites are a plurality of logic function gates, each comprised of a first physical qubit gate site associated with a first physical qubit site in the first line, and a second physical qubit gate site associated with the physical qubit site in the second line that corresponds to the first physical qubit site.

Abstract: A spin oscillator device generates a microwave output in response to an applied DC current. The device includes a spin momentum transfer (SMT) stack including a top electrode, a free layer, a nonmagnetic layer, a pinned magnetic structure, and a bottom electrode. A local magnetic field source adjacent the SMT stack applies a local magnetic field to the free layer to cause the magnetization direction of the free layer to be oriented at a tilt angle with respect to plane of the free layer. The local magnetic field source can include coils or an electromagnet structure, or permanent magnets in close proximity to the SMT stack.

Abstract: A ferromagnetic thin-film based magnetic field detection system having a substrate supporting a magnetic field sensor in a channel with a first electrical conductor supported on the substrate positioned at least in part along the channel gap and in direct contact with at least some surface of the magnetic field sensor ands a second electrical conductor supported on the substrate positioned at least in part along the channel gap in a region thereof adjacent to, but separated from, the magnetic field sensor.

Abstract: Various method and system embodiments of the present invention are directed to implementing serial logic gates using nanowire-crossbar arrays with spintronic devices located at nanowire-crossbar junctions. In one embodiment of the present invention, a nanowire-crossbar array comprises a first nanowire and a number of substantially parallel control nanowires positioned so that each control nanowire overlaps the first nanowire. The nanowire-crossbar array includes a number of spintronic devices. Each spintronic device is configured to connect one of the control nanowires to the first nanowire and operate as a latch for controlling signal transmissions between the control nanowire and the first nanowire.

Abstract: A method for computing using a quantum system comprising a plurality of superconducting qubits is provided. Quantum system can be in any one of at least two configurations including (i) an initialization Hamiltonian H0 and (ii) a problem Hamiltonian HP. The plurality of superconducting qubits are arranged with respect to one another, with a predetermined number of couplings between respective pairs of superconducting qubits in the plurality of qubits, such that the plurality of superconducting qubits, coupled by the predetermined number of couplings, collectively define a computational problem to be solved. In the method, quantum system is initialized to the initialization Hamiltonian HO. Quantum system is then adiabatically changed until it is described by the ground state of the problem Hamiltonian HP. The quantum state of quantum system is then readout thereby solving the computational problem to be solved.

Abstract: Graphic displays or audio sound representations of numerical solutions of physics problems modeled by complicated, computationally complex mathematics are generated by Type I and Type II quantum computers, which employs a plurality of classically interconnected nodes each consisting of relatively few qubits, or classical computers emulating Type I and Type II quantum computers. This is done by setting the boundary conditions so that conservation is maintained within a high precision and performing multi-demensional computations as a series of single dimensional computations employing pseudo-random number generators on a classical computer to simulate the stochastic nature of the quantum process. On a quantum computer randomness is supplied the quantum process direction.

Abstract: A quantum computing structure comprising a superconducting phase-charge qubit, wherein the superconducting phase-charge qubit comprises a superconducting loop with at least one Josephson junction. The quantum computing structure also comprises a first mechanism for controlling a charge of the superconducting phase-charge qubit and a second mechanism for detecting a charge of the superconducting phase-charge qubit, wherein the first mechanism and the second mechanism are each capacitively connected to the superconducting phase-charge qubit.

Abstract: A method for reading out the state of a mesoscopic phase device. In the method the mesoscopic phase device is coherently coupled to a mesoscopic charge device using a phase shift device and the quantum state of the mesoscopic charge device is measured. A method for reading out the quantum state of a qubit in a heterogeneous quantum register. The heterogeneous quantum register includes a first plurality of phase qubits and a second plurality of charge qubits. In the method a first phase qubit or a first charge qubit in the heterogeneous quantum register is selected. The first phase qubit or the first charge qubit is coherently connected to a mesoscopic charge device for a duration tc. The quantum state of the mesoscopic charge device is read out after the duration tc has elapsed.

Abstract: A MgO tunnel barrier is sandwiched between semiconductor material on one side and a ferri- and/or ferromagnetic material on the other side to form a spintronic element. The semiconductor material may include GaAs, for example. The spintronic element may be used as a spin injection device by injecting charge carriers from the magnetic material into the MgO tunnel barrier and then into the semiconductor. Similarly, the spintronic element may be used as a detector or analyzer of spin-polarized charge carriers by flowing charge carriers from the surface of the semiconducting layer through the MgO tunnel barrier and into the (ferri- or ferro-) magnetic material, which then acts as a detector. The MgO tunnel barrier is preferably formed by forming a Mg layer on an underlayer (e.g., a ferromagnetic layer), and then directing additional Mg, in the presence of oxygen, towards the underlayer.

Abstract: Disclosed is a magnetic memory apparatus which comprises a patterned magnetic recording medium in which multilayered films each having a first magnetic layer, a nonmagnetic metal layer or a nonmagnetic insulating layer and a second magnetic layer deposited discretely on a conductive electrode layer formed on a substrate, and a cantilever array having a plurality of cantilevers each having a conductive chip at its distal end. This provides a magnetic solid memory apparatus that has a large memory capacity and a super fast transfer rate, the merits of a hard disk apparatus, and a nanostructure and low power consumption, which are the merits of a semiconductor memory.

Abstract: A method for determining whether a first state of a quantum system is occupied is provided. A driving signal is applied to the system at a frequency corresponding to an energy level separation between a first and second state of the system. The system produces a readout frequency only when the first state is occupied. A property of a measurement resonator that is coupled to the quantum system is measured when the quantum system produces the readout frequency, thereby determining whether the first state of the quantum system is occupied. A structure for detecting a qubit state of a qubit is provided. The structure comprises a quantum system that includes the qubit. The qubit has first and second basis states and an ancillary quantum state. The ancillary quantum state can be coupled to the first or second basis states. The structure has a measurement resonator configured to couple to Rabi oscillations between (i) one of the first and second basis states and (ii) the ancillary state in the quantum system.

Abstract: A spin filtering device has: a spin filter (1) having an input region (3) for carrying an electron current, an output region (4) for carrying an electron current, and a three-dimensionally confined quantum region (2a) arranged to operate in the Coulomb blockade regime and separating the input and output regions (3 and 4) whereby electrons can only pass from the input region to the output region by tunnelling through the quantum region; and Zeeman splitting means (5) for causing Zeeman splitting in the spin filter, the quantum region (2a) and input and output regions (3 and 4) being formed such that the Zeeman splitting in the input and output regions (3 and 4) is less than the Fermi energy such that, in operation, the spin filter outputs a tunnelling current predominantly of one spin polarity. The direction of Zeeman splitting may be controlled to control the predominant spin polarity.