Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device including a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.

Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.

Abstract: Method to produce diamonds containing Nitrogen-Vacancy centers from diamonds grown by a high pressure and high temperature process and containing isolated substitutional nitrogen, comprising: —Irradiating (12) said diamonds by an electron beam such that the irradiation dose is comprised between 1017 and 1019 electrons per square centimeter; —annealing (14) the irradiated diamonds in vacuum or in a inert atmosphere at a temperature above 700° C. and for at least 1 hour; characterized in that said electron beam has an acceleration energy above 7 MeV.

Abstract: There is provided a quantum dot light-emitting device including: a light-emitting layer containing a quantum dot luminescent material; and a metal-based particle assembly layer being a layer consisting of a particle assembly including 30 or more metal-based particles separated from each other and disposed in two-dimensions, said metal-based particles having an average particle diameter in a range of 200 to 1600 nm, an average height in a range of 55 to 500 nm, and an aspect ratio, as defined by a ratio of said average particle diameter to said average height, in a range of 1 to 8, wherein said metal-based particles that compose said metal-based particle assembly layer are disposed such that an average distance between adjacent metal-based particles may be in a range of 1 to 150 nm. The quantum dot light-emitting device provides enhanced emission via the metal-based particle assembly layer and thus presents high luminous efficiency.

Abstract: A liquid crystal display including: a liquid crystal display panel including a thin film transistor substrate and a liquid crystal layer disposed on the thin film transistor substrate; a heat generation unit that is configured to heat the liquid crystal layer; a resistance sensing unit that senses a change in a magnitude of resistance of the heat generation unit; a heat generation unit power controller that decreases a magnitude of power applied to the heat generation unit when the magnitude of resistance of the heat generation unit is equal to or greater than a reference magnitude of resistance; and a power supply unit that supplies power of a designated magnitude to the heat generation unit power controller.

Abstract: A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.

Abstract: An incandescent light source display includes a container and a number of incandescent light sources. The incandescent light sources are located in the container. Each of the incandescent light sources includes a first electrode, a second electrode and an incandescent element. The second electrode is spaced from the first electrode. The incandescent element is electrically connected to the first electrode and the second electrode. The incandescent element includes a carbon nanotube structure.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: A quantum dot organic light emitting device and a method of manufacturing the same are disclosed. A first electrode layer is formed on a substrate. A block copolymer film which can cause phase separation on the first electrode layer is formed. The block copolymer film is phase-separated into a plurality of first domains, each having a nano size column shape, and a second domain which surrounds the first domains. A quantum dot template film of the second domain, which comprises a plurality of nano size through holes, is formed by selectively removing the first domains. Quantum dot structures, each of which comprises an organic light emitting layer in the through hole of the quantum dot template film, is formed.

Abstract: An apparatus for producing x-rays for use in imaging applications having a piezoelectric or pyroelectric crystal with an upper surface and a conducting film coating the upper surface. The crystal includes a plurality of field emitters formed as micrometer-scale exposed regions in the crystal having a one or more sharp peaks or ridges, or parallel trenches forming a wedge shaped emitter. The crystal is alternately heated and cooled over a period of time so that spontaneous charge polarization occurs in the crystal. The spontaneous charge polarization causes a perpendicular electric field to arise on the crystal's top and bottom faces, that is enhanced by the sharp peaks or ridges, thereby causing field emission of surface electrons from that location. X-rays are produced when the emitted electrons strike a target material located adjacent to the emitting face, and the X-rays may be filtered or collimated.

Abstract: A lamp uses a solid state source to pump one or more doped semiconductor nanophosphors to produce a light output of a desired characteristic. The nanophosphor(s) is dispersed in a material, examples of which include liquids and gases. Various nanophosphors are discussed. In the examples, the material with the doped semiconductor nanophosphor(s) dispersed therein appears at least substantially clear when the lamp is off. The exemplary lamp also includes circuitry for driving the solid state source and a housing that at least encloses the drive circuitry. The lamp has a lighting industry standard lamp base mechanically connected to the housing and electrically connected to provide electricity to the circuitry for driving the solid state source.

Abstract: A fully-functional radio receiver fabricated from a single nanotube is being disclosed. Simultaneously, a single nanotube can perform the functions of all major components of a radio: antenna, tunable band-pass filter, amplifier, and demodulator. A DC voltage source, as supplied by a battery, can power the radio. Using carrier waves in the commercially relevant 40-400 MHz range and both frequency and amplitude modulation techniques, successful music and voice reception has been demonstrated. Also disclosed are a radio transmitter and a mass sensor using a nanotube resonator device.

Abstract: An organic light emitting device enables improvement on the loss of optical extraction efficiency due to total reflection and optical waveguide effects. The organic light emitting device has a structure wherein a first electrode, an organic substance layer, and a second electrode are sequentially laminated on a substrate, a random nano structure having a fine pattern of a peaks-and-valleys shape is formed between a substrate and a first electrode to extract any light that is wasted due to total reflection and an optical waveguide mode to the outside of the substrate so that an organic light emitting device with improved external quantum efficiency can be realized, and optical extraction patterns and color changes due to visual field angles can also be improved.

Abstract: Systems and methods related to the determination of one or more mechanical characteristics of a structural element are generally described. In some embodiments, a mechanical characteristic (e.g., a crack, a deformation, an inclusion, etc.) can be determined based at least in part upon the determination of a temperature generated, for example, by passing a current through a network of structures within the structural element. For example, in some embodiments, the structural element can comprise a network of electrically conductive nanostructures and, in some cases, a primary structural material that is not substantially electrically conductive. An electrical current can be passed through the network of electrically conductive nanostructures (e.g., by passing current through an electrical circuit comprising the network of electrically conductive nanostructures). This may result in resistive heating (also known as Joule-effect heating) of the nanostructure network.

Abstract: An electric energy generator may include a semiconductor layer and a plurality of nanowires having piezoelectric characteristics. The electric energy generator may convert optical energy into electric energy if external light is applied and may generate piezoelectric energy if external pressure (e.g., sound or vibration) is applied.

Abstract: A method of fabricating a nanodevice includes providing a nanowire having a first portion and a second portion. The nanowire has a polymer coating. A nanostructure is provided that is proximate to the second portion of the nanowire. Solely the first portion of the nanowire is irradiated with near-infrared radiation, thereby exciting the first portion to generate ultraviolet radiation. The generated ultraviolet radiation is guided from the first portion along the nanowire toward the second portion, so that a region of the polymer coating on the second portion is polymerized and bonds the nanostructure to the nanowire.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: The present teachings provide for systems, and components thereof, for detecting and/or analyzing light. These systems can include, among others, optical reference standards utilizing luminophores, such as nanocrystals, for calibrating, validating, and/or monitoring light-detection systems, before, during, and/or after sample analysis.

Abstract: An incandescent light source display includes a substrate, a plurality of first electrode down-leads, a plurality of second electrode down-leads and a plurality of heating units. The plurality of first electrode down-leads are located on the substrate in parallel to each other and the plurality of second electrode down-leads are located on the substrate in parallel to each other. The first electrode down-leads cross the second electrode down-leads and corporately define a grid having a plurality of cells. Each of the incandescent light sources is located in correspondence with each of the cells. Each incandescent light source includes a first electrode, a second electrode and an incandescent element. The incandescent element includes a carbon nanotube structure.

Abstract: The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.

Abstract: An organic light emitting display device includes a substrate; a first electrode layer formed on the substrate; an emission structure layer formed on the first electrode layer; an electron injection layer (EIL) formed immediately on the emission structure layer and comprising a composite layer of LiF:Yb; and a second electrode layer formed on the EIL.

Abstract: Method to produce diamonds containing Nitrogen-Vacancy centers from diamonds grown by a high pressure and high temperature process and containing isolated substitutional nitrogen, comprising: —Irradiating (12) said diamonds by an electron beam such that the irradiation dose is comprised between 1017 and 1019 electrons per square centimeter; —annealing (14) the irradiated diamonds in vacuum or in a inert atmosphere at a temperature above 700° C. and for at least 1 hour; characterized in that said electron beam has an acceleration energy above 7 MeV.

Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

Abstract: A method of manufacturing a down-conversion substrate for use in a light system includes forming a first crystallography layer including one or more phosphor materials and, optionally, applying at least one activator to the crystallography layer, heating the crystallography layer at high temperature to promote crystal growth in the crystallography layer, and drawing out the crystallography layer and allowing the crystallography layer to cool to form the down-conversion substrate. A light system includes an excitation source for emitting short wavelength primary emissions; and a down-conversion substrate disposed in the path of at least some of the primary emissions from the excitation source to convert at least a portion of the primary emissions into longer-wavelength secondary emissions, wherein the substrate includes one or more crystallography layers, wherein each crystallography layer includes one or more phosphor materials, and optionally at least one activator.

Abstract: A microcavity-controlled two-dimensional carbon lattice structure device selectively modifies to reflect or to transmit, or emits, or absorbs, electromagnetic radiation depending on the wavelength of the electromagnetic radiation. The microcavity-controlled two-dimensional carbon lattice structure device employs a graphene layer or at least one carbon nanotube located within an optical center of a microcavity defined by a pair of partial mirrors that partially reflect electromagnetic radiation. The spacing between the mirror determines the efficiency of elastic and inelastic scattering of electromagnetic radiation inside the microcavity, and hence, determines a resonance wavelength of electronic radiation that is coupled to the microcavity. The resonance wavelength is tunable by selecting the dimensional and material parameters of the microcavity. The process for manufacturing this device is compatible with standard complementary metal oxide semiconductor (CMOS) manufacturing processes.

Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may be a multi junction solar cell. The optoelectronic device may have a bi-layer electrical interconnect that is physically and electrically connected to sidewalls of the array of nanostructures. The optoelectronic device may be operated as a multi junction solar cell, wherein each junction is associated with one portion of the device. The bi-layer electrical interconnect allows current to pass from one portion to the next. Thus, the bi-layer electrical interconnect may serve as a replacement for a tunnel junction, which is used in some conventional multi junction solar cells.

Abstract: A bobbin includes a paper matrix and a plurality of carbon nanotubes dispersed in the paper matrix. A loudspeaker includes a magnetic circuit, a bobbin, a voice coil, a damper, and a diaphragm. The magnetic circuit defines a magnetic gap. The bobbin is located in the magnetic gap and includes a paper matrix and a plurality of carbon nanotubes dispersed in the paper matrix. The voice coil is wounded on the bobbin. The damper is fixed to the bobbin. The diaphragm includes an inner rim fixed to the bobbin and held mechanically by the damper.

Abstract: A bobbin for a loudspeaker includes at least one base and at least one carbon nanotube structure. The at least one carbon nanotube structure is positioned on at least one surface of the base. A loudspeaker includes a magnetic circuit, a bobbin; a voice coil, and a diaphragm. The magnetic circuit defines a magnetic gap. The bobbin is located in the magnetic gap and includes at least one carbon nanotube structure. The voice coil is wounded on the bobbin. The diaphragm includes an inner rim fixed to the bobbin.

Abstract: A bobbin is a hollow tubular structure formed of a carbon nanotube composite structure. A loudspeaker includes a magnetic circuit; a bobbin; a voice coil; and a diaphragm. The magnetic circuit defines a magnetic gap. The bobbin is located in the magnetic gap. The voice coil is wounded on the bobbin. The diaphragm includes an inner rim fixed to the bobbin. The bobbin is a hollow tubular structure formed of a carbon nanotube composite structure.

Abstract: The invention relates to imparting photoreactivity to target cells, e.g., retinal cells, by introducing photoresponsive functional abiotic nanosystems (FANs), nanometer-scale semiconductor/metal or semiconductor/semiconductor hetero-junctions that in this case include a photovoltaic effect. The invention further provides methods of making and using FANs, where the hetero-junctions bear surface functionalization that localizes them in cell membranes. Illumination of these hetero-junctions incorporated in cell membranes generates photovoltages that depolarize the membranes, such as those of nerve cells, in which FANs photogenerate action potentials. Incorporating FANs into the cells of a retina with damaged photoreceptor cells reintroduces photoresponsiveness to the retina, so that light creates action potentials that the brain interprets as sight.

Abstract: The present invention discloses a system and method for generating a beam of fast ions. The system comprising: a target substrate having a patterned surface, a pattern comprising nanoscale pattern features oriented substantially uniformly along a common axis; and; a beam unit adapted for receiving a high power coherent electromagnetic radiation beam and focusing it onto said patterned surface of the target substrate to cause interaction between said radiation beam and said substrate enabling creation of fast ions.

Abstract: A damper includes a paper matrix and a plurality of carbon nanotubes dispersed in the paper matrix. A loudspeaker includes a magnetic circuit, a bobbin, a voice coil, a damper, and a diaphragm. The magnetic circuit defines a magnetic gap. The bobbin is located in the magnetic gap. The voice coil is wounded on the bobbin. The damper is fixed to the bobbin and includes a paper matrix and a plurality of carbon nanotubes dispersed in the paper matrix. The diaphragm includes an inner rim fixed to the bobbin and mechanically held by the damper.

Abstract: A damper includes at least one matrix and at least one carbon nanotube structure disposed on at least one surface of the at least one matrix. A loudspeaker using the damper is also disclosed. The loudspeaker includes a frame, a diaphragm secured on the frame, a bobbin having a voice coil, and a damper. The bobbin is secured to the diaphragm. The damper has a first engaging surface engaged with the frame and a second engaging surface engaged with the bobbin.

Abstract: A diaphragm includes a central portion and an edge portion around the central portion. The central portion includes a plurality of carbon nanotubes therein. The central portion is a carbon nanotube structure or a carbon nanotube composite structure. A loudspeaker using the diaphragm is also disclosed. The loudspeaker includes the diaphragm and a voice coil connected to the diaphragm. The voice coil is connected to an outer periphery of the central portion or a joint portion between the central portion and the edge portion.

Abstract: A diaphragm includes a membrane and at least one reinforcing structure stacked on the membrane. The at least one reinforcing structure includes at least one free-standing carbon nanotube structure. The at least one free-standing carbon nanotube structure includes a net structure of a plurality of carbon nanotubes combined to each other due to the van der Waals attractive force. A loudspeaker using the diaphragm is also disclosed.

Abstract: A damper has ridges and furrows thereon and a through hole therein. The damper includes a carbon nanotube film structure and an amorphous carbon structure. The carbon nanotube film structure defines a number of micropores therein. The amorphous carbon structure is composited with the carbon nanotube structure. The amorphous carbon structure comprises a number of amorphous carbon particles received in the micropores.

Abstract: A diaphragm includes carbon nanotube wire structures. The carbon nanotube wire structures are crossed with each other and woven together to form the diaphragm with a sheet structure. Each of the carbon nanotube wire structures includes carbon nanotube wires substantially parallel to each other, and closely arranged along an axis of the carbon nanotube wire structure to form a bundle-like structure, or carbon nanotube wires twisted with each other around an axis of the carbon nanotube wire structure in a helical manner to form a twisted structure. A loudspeaker using the diaphragm is also disclosed.

Abstract: The present disclosure provides a damper. The damper has alternating ridges and furrows thereon and has a through hole defined at a center of the damper. The ridges and furrows are concentric. The damper includes a matrix and at least one carbon nanotube structure disposed in the matrix. The present disclosure also provides a loudspeaker using the damper.

Abstract: A loudspeaker includes a frame, a magnetic circuit, a voice coil bobbin, and a voice coil. The frame is mounted on a side of the magnetic circuit. The magnetic circuit defines a magnetic gap. The voice coil bobbin is disposed in the magnetic gap. The voice coil is wound around the voice coil bobbin. The voice coil bobbin includes a carbon nanotube layer structure. The carbon nanotube layer structure includes a plurality of carbon nanotubes.

Abstract: A thermoacoustic device includes a substrate, at least one first electrode, at least one second electrode and a sound wave generator. The at least one first electrode and the at least one second electrode are disposed on the substrate. The sound wave generator is contacting with the at least one first electrode and the at least one second electrode. The sound wave generator is suspended on the substrate via the first electrode and the second electrode. The sound wave generator includes a carbon nanotube structure.

Abstract: A diaphragm includes a diaphragm matrix and at least one reinforcing structure composited with the diaphragm matrix. The at least one reinforcing structure includes at least one freestanding carbon nanotube structure. A loudspeaker includes a magnetic circuit defining a magnetic gap; a bobbin located in the magnetic gap; a voice coil wound on the bobbin; and a diaphragm. The diaphragm includes an inner rim fixed to the bobbin a diaphragm matrix, and at least one reinforcing structure composited with the diaphragm matrix. The at least one reinforcing structure includes at least one freestanding carbon nanotube structure.

Abstract: A loudspeaker includes a frame, a magnetic circuit, a voice coil bobbin and a voice coil. The magnetic circuit defines a magnetic gap. The frame is mounted on a side of the magnetic circuit. The voice coil bobbin is received in the magnetic gap. The voice coil is wound around the voice coil bobbin. The voice coil includes a lead wire. The lead wire includes a linear carbon nanotube structure and an insulated layer. The insulated layer is coated on the linear carbon nanotube structure.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: Optical beam modulation is accomplished with the aid of a semiconductive nanomembrane, such as a silicon nanomembrane. A photocathode modulates a beam of charged particles that flow between the carbon nanotube emitter and the anode. A light source, or other source of electromagnetic radiation, supplies electromagnetic radiation that modulates the beam of charged particles. The beam of charged particles may be electrons, ions, or other charged particles. The electromagnetic radiation penetrates a silicon dioxide layer to reach the nanomembrane and varies the amount of available charge carriers within the nanomembrane, thereby changing the resistance of the nanomembrane. As the resistance of the nanomembrane changes, the amount of current flowing through the beam may also change.

Abstract: A method for fabrication of substrate having a nano-scale surface roughness is presented. The method comprises: patterning a surface of a substrate to create an array of spaced-apart regions of a light sensitive material; applying a controllable etching to the patterned surface, said controllable etching being of a predetermined duration selected so as to form a pattern with nano-scale features; and removing the light sensitive material, thereby creating a structure with the nano-scale surface roughness. Silanizing such nano-scale roughness surface with hydrophobic molecules results in the creation of super-hydrophobic properties characterized by both a large contact angle and a large tilting angle. Also, deposition of a photo-active material on the nano-scale roughness surface results in a photocathode with enhanced photoemission yield. This method also provides for fabrication of a photocathode insensitive to polarization of incident light.

Abstract: A light emitting chip includes a substrate, a buffer layer, a cap layer and a light emitting structure. The buffer layer is formed on the substrate and includes a carbon nano tube structure substantially parallel to the substrate. The carbon nano tube structure is comprised of nitride semiconductor. The cap layer grows from the buffer layer. The light emitting structure is formed on the cap layer. The light emitting structure sequentially includes a first cladding layer connected to the cap layer, a light emitting layer, and a second cladding layer.

Abstract: The present invention relates to X-ray generating technology in general. Providing X-ray generating device internal voltage sources or potentials may help reduce necessary feed-throughs into an evacuated envelope of an X-ray generating device. Consequently, an X-ray generating device comprising an electron scattering element is presented. According to the present invention, an X-ray generating device is provided, comprising an electron emitting element 16, an electron collecting element 20 and an electron scattering element 42. A primary electron beam 17a is arrangeable between the electron emitting element 16 and the electron collecting element 20. The electron emitting element 16 and the electron collecting element 20 are operatively coupled for generating X-radiation 14.

Abstract: Sidewall tracing nanoprobes, in which the tip shape of the nanoprobe Is altered so that the diameter or width of the very tip of the probe is wider than the diameter of the supporting stem. Such side protruding probe tips are fabricated by a subtractive method of reducing the stem diameter, an additive method of increasing the tip diameter, or sideway bending of the probe tip. These sidewall tracing nanoprobes are useful for inspection of semiconductor devices, especially to quantitatively evaluate the defects on the side wall of trenches or via holes.

Abstract: A manufacturing method of an LED device includes the following steps. First, a substrate and at least one LED disposed on the substrate are provided. Next, a porous material layer having a plurality of pores is formed on a surface of the LED. Finally, a plurality of nanocrystals are formed in the pores to construct a phosphor layer on the surface of the LED.