Abstract: The present teachings provide for systems, and components thereof, for detecting and/or analyzing light. These systems can include, among others, optical reference standards utilizing luminophores, such as nanocrystals, for calibrating, validating, and/or monitoring light-detection systems, before, during, and/or after sample analysis.

Abstract: A method for preparing an iridium tip with atomic sharpness. The method includes tapering an iridium wire to a needle shape and heating the iridium needle in an oxygen atmosphere. Also disclosed is an iridium needle having a pyramidal structure which terminates with a small number of atoms prepared by the methods.

Abstract: Method to produce diamonds containing Nitrogen-Vacancy centres from diamonds grown by a high pressure and high temperature process and containing isolated substitutional nitrogen, comprising: —Irradiating (12) said diamonds by an electron beam such that the irradiation dose is comprised between 1017 and 1019 electrons per square centimeter; —annealing (14) the irradiated diamonds in vacuum or in a inert atmosphere at a temperature above 700° C. and for at least 1 hour; characterized in that said electron beam has an acceleration energy above 7 MeV.

Abstract: A method for manufacturing a display device using light emitting diode chips contemplates manufacturing a plurality of light emitting diode (LED) chips using a porous template; forming a plurality of first electrodes on a substrate; attaching the LED chips to pixel sites on the first electrodes using fluidic self assembly (FSA); and forming a plurality of second electrodes on a top surface of the LED chips.

Abstract: A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer.

Abstract: The invention relates to processes for the production and elements (components) with a nanostructure (2; 4, 4a) for improving the optical behavior of components and devices and/or for improving the behavior of sensors by enlarging the active surface area. The nanostructure (2) is produced in a self-masking fashion by means of RIE etching and its material composition can be modified and it can be provided with suitable cover layers.

Abstract: A single-photon generating device is configured to have a solid substrate including abase portion, and a pillar portion which is formed on the surface side of the base portion with a localized level existent in the vicinity of the tip of the base portion. The above pillar portion is formed to have a larger cross section on the base portion side than the cross section on the tip side, so that the light generated from the localized level is reflected on the surface, propagated inside the pillar portion, and output from the back face side of the base portion.

Abstract: A plate for matrix-assisted laser desorption ionization (MALDI) mass spectrometry comprising an electrically conductive substrate (1) covered with a light sensitive matrix (2), the matrix (2) comprising a light absorber, a charge carrier, a probe molecule and a photo-sensitizer (3) arranged to oxidise the probe molecule when irradiated with light (4).

Abstract: The present application relates to an opto-electronic device. The opto-electronic device includes a first light-emitting structure and a second light-emitting structure. The first light-emitting structure is capable of generating a first light having a first wavelength. The second light-emitting structure is capable of generating a second light having a second wavelength. The first light-emitting structure includes a nanorod structure having a first active layer, and the first active layer can absorb the second light to generate the first light.

Abstract: A non-radioactive source for Atmospheric Pressure Ionization is described. The electron-beam sealed tube uses a pyroelectric crystal(s). One end of the crystal is grounded while the other end has a metallic cap with sharp feature to generate an electron beam of a given energy. The rate of heating and/or cooling of the crystal is used to control the current generated from a tube. A heating and/or cooling element such as a Peltier element is useful for controlling the rate of cooling of the crystal. A thin window that is transparent to electrons but impervious to gases is needed in order to prolong the life of the tube and allow the extraction of the electrons. If needed, multiple crystals with independent heaters can be used to provide continuous operation of the device. The energy of the electrons can be determined through the appropriate choice of the radius of curvature of the sharp feature and the gap between the sharp feature and the window, while the opposite side of the crystal is at low voltage.

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8?x?1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.

Abstract: A light emitting device includes a substrate layer, a first injection contact positioned over the substrate layer, a first dielectric layer positioned over the first injection contact, a light emission layer positioned over the first dielectric layer, a second dielectric layer positioned over the light emission layer and a second injection contact positioned over the second dielectric layer. The light emission layer includes an organic template having binding sites for binding nanoparticles into an array. The wavelength of emitted light is dependent upon the size of the nanoparticles and the pitch of the array. The light emitting device may include a first plurality of binding sites for binding a first set of nanoparticles and a second plurality of binding sites for binding a second set of nanoparticles. The wavelength depends upon a ratio of the first plurality to the second plurality of binding sites.

Abstract: Light emitting devices and devices with improved performance are disclosed. In one embodiment, a light emitting device includes an emissive material disposed between a first electrode, and a second electrode, wherein the emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation, wherein the light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. Also disclosed is a display including at least one light emitting device including an emissive material disposed between a first electrode, and a second electrode, wherein the at least one light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. In another embodiment, a light emitting device includes an emissive material disposed between a first electrode and a second electrode.

Abstract: A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.

Abstract: A light-emitting device includes a plurality of ultra-small resonant structures, each of said structures constructed and adapted to emit electromagnetic radiation (EMR) at a particular wavelength when a beam of charged particles is passed nearby. A combiner mechanism constructed and adapted to combine data from a data source with the EMR emitted by at least one of the ultra-small resonant structures.

Abstract: A method of manufacturing silicon nanowires is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a device including silicon nanowires formed using the above exemplary method according to the present invention can be effectively applied to various devices, for example, electronic devices such as field effect transistors, sensors, photodetectors, light emitting diodes, laser diodes, etc.

Abstract: A carbon nano-tube based variable frequency patch antennas which utilizes a dense network of semiconducting carbon nanotubes as the antenna patch is provided. In preferred embodiments, the resonant frequency of the antenna can be tuned electrically by adjusting appropriate sections of its back-gate, thus altering the effective size of the patch antenna and radiation beam direction can be formed and stirred. In one embodiment, a patch antenna comprises a dense network or thick layer of semiconducting carbon nanotubes grown or deposited on an oxide layer to form a carbon nanotube patch and a partitioned backgate is positioned below the oxide layer with a ground-plane formed from a thin layer of metal. In other embodiments, a patch antenna includes an array of carbon nanotube patches and the ground-plane doubles as the backgate.

Abstract: A waveguide conduit is constructed and adapted to capture the light emitted by the at least one nano-resonant structure. The nano-resonant structure emits light in response to excitation by a beam of charged particles, The source of charged particles may be an ion gun, a thermionic filament, a tungsten filament, a cathode, a field-emission cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, or an ion-impact ionizer.

Abstract: Methods for depositing material and nanomaterial onto a substrate are disclosed. Also disclosed are methods of making devices including nanomaterials, and a system useful for depositing materials and nanomaterials.

Abstract: A composition useful for altering the wavelength of visible or invisible light is disclosed. The composition comprising a solid host material and quantum confined semiconductor nanoparticles, wherein the nanoparticles are included in the composition in amount in the range from about 0.001 to about 15 weight percent based on the weight of the host material. The composition can further include scatterers. An optical component including a waveguide component and quantum confined semiconductor nanoparticles is also disclosed. A device including an optical component is disclosed. A system including an optical component including a waveguide component and quantum confined semiconductor nanoparticles and a light source optically coupled to the waveguide component is also disclosed. A decal, kit, ink composition, and method are also disclosed. A TFEL including quantum confined semiconductor nanoparticles on a surface thereof is also disclosed.

Abstract: Disclosed is an ion gage using a carbon nano-tube, more specifically a pressure sensor using a field emission of the carbon nano-tube. An array of carbon nano-tubes is formed on a metallic layer. A first grid is disposed on the array of the carbon nano-tubes. A second grid is disposed on the first grid in such a manner as to be spaced apart by a certain desired distance from the first grid. A collector is disposed on the second grid in such a manner as to be spaced apart by a certain desired distance from the second grid. Electrons emitted from the carbon nano-tube are collided with gas molecules to be ionized. The ionized cation is sensed by the collector to be outputted as an electrical signal.

Abstract: Provided are a cooling device coated with carbon nanotubes and method of manufacturing the same. Carbon nanotubes are dispersively coated on a surface of the cooling device that radiates generated by a predetermined apparatus or component through thermal exchange. Thus, a carbon nanotube structure is formed so that the cooling device can improve in a thermal radiation characteristic and become small-sized. As a result, electronic devices can be downscaled and heat generated by a highly integrated electronic circuit chip can be effectively radiated, thus increasing lifetime and performance of an operating circuit.

Abstract: A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment selectively disposed at a predetermined location within a resonant cavity that is configured to resonate at least one wavelength of electromagnetic radiation emitted by the segment within a range extending from about 300 nanometers to about 2,000 nanometers. Active nanoparticles are precisely positioned in resonant cavities by growing segments of nanowires at known growth rates for selected amounts of time.

Abstract: A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment selectively disposed at a predetermined location within a resonant cavity that is configured to resonate at least one wavelength of electromagnetic radiation emitted by the segment within a range extending from about 300 nanometers to about 2,000 nanometers. Active nanoparticles are precisely positioned in resonant cavities by growing segments of nanowires at known growth rates for selected amounts of time.

Abstract: The invention provides a semiconductor nanoparticle comprising a semiconductor nanoparticle core on the surface of which electron-releasing groups are arranged, the semiconductor nanoparticle having a fluorescent property and water-solubility. The invention also provides a water-soluble semiconductor nanoparticle with an excellent fluorescent property that can be easily prepared by adding a surface-treating material for providing a semiconductor nanoparticle with one or more kinds of electron-releasing groups, and arranging the electron-releasing groups on the surface of the semiconductor nanoparticle core.

Abstract: A coupled nano-resonating structure includes a plurality of a nano-resonating substructures constructed and adapted to couple energy from a beam of charged particles into said nano-resonating structure and to transmit the coupled energy outside said nano-resonating structure. The nano-resonant substructures may have various shapes and may include parallel rows of structures. The rows may be symmetric or asymmetric, tilted, and/or staggered.

Abstract: A carbon substance comprises a structure and line-shaped bodies, the structure having a size ranging from about 1 ?m to about 100 ?m and including carbon and a metal or a metallic oxide, and the line-shaped bodies having diameters smaller than about 200 nm and including carbon as a main component thereof and growing radially from a surface of the structure. A method for manufacturing the carbon substance uses a thermal decomposition of a source gas containing carbon in the vicinity of a catalyst, wherein the catalyst comprises a first and a second materials, the first material being Ni or a Ni oxide and the second material being In or an In oxide; and the thermal decomposition is performed at a temperature ranging from about 675° C. to about 750° C. An electron emission element uses the carbon substance as an electron emission material. A composite material includes the carbon substance in its matrix.

Abstract: A lymphatic system can be imaged with emissive semiconductor nanocrystals, for example, in the near infrared.

Abstract: A light emitting device comprises a gate electrode, a channel comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode, a source coupled to a first end of the channel injecting electrons into the channel, and a drain coupled to a second end of the channel injecting holes into the channel.

Abstract: A field emission array which does not contain any organic material is manufactured by separately preparing nanostructures whose one ends were coated and then adhering the coated ends of the nanostructures to a metal electrode layer formed on a substrate.