Abstract: An optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein the optical material has a solid state photoluminescent efficiency greater than or equal to 60%. Devices including optical materials and/or optical components and methods are also disclosed.

Abstract: The present invention relates to the use of light-converting, colloidal, doped semiconductor nanocrystals to provide a new generation of high performance, low cost monochromatic and white light sources based on LEDs.

Abstract: Provided are a carbon ion generating device and a tumor treatment apparatus using the same. The carbon ion generating device includes a carbon nanostructure, a carbon emitting structure, an ionizing structure, and an accelerator. The carbon emitting structure is configured to induce an emission of carbon atoms from one end of the carbon nanostructure. The ionizing structure is configured to ionize the emitted carbon atoms. The accelerator is configured to accelerate the ionized carbon atoms.

Abstract: A liquid crystal display including: a liquid crystal display panel including a thin film transistor substrate and a liquid crystal layer disposed on the thin film transistor substrate; a heat generation unit that is configured to heat the liquid crystal layer; a resistance sensing unit that senses a change in a magnitude of resistance of the heat generation unit; a heat generation unit power controller that decreases a magnitude of power applied to the heat generation unit when the magnitude of resistance of the heat generation unit is equal to or greater than a reference magnitude of resistance; and a power supply unit that supplies power of a designated magnitude to the heat generation unit power controller.

Abstract: Detecting electrical overstress events in electronic circuitry such as optical emitters. In one example embodiment, a laser includes an active area and a contact region in electrical communication with the active area. A portion of the contact region is configured to manifest a change in a visual attribute of the portion in response to exposure of the portion to an electrical overstress event.

Abstract: The present application relates to an opto-electronic device. The opto-electronic device includes a first light-emitting structure and a second light-emitting structure. The first light-emitting structure is capable of generating a first light having a first wavelength. The second light-emitting structure is capable of generating a second light having a second wavelength. The first light-emitting structure includes a nanorod structure having a first active layer, and the first active layer can absorb the second light to generate the first light.

Abstract: Various embodiments of the present invention are directed to external, electronically controllable, negative index material-based modulators. In one aspect, an external modulator comprises a negative index material in electronic communication with an electronic signal source. The negative index material receives an electronic signal encoding data from the electronic signal source and an unmodulated carrier wave from an electromagnetic radiation source. Magnitude variations in the electronic signal produce corresponding effective refractive index changes in the negative index material encoding the data in the amplitude and/or phase of the carrier wave to produce an electromagnetic signal.

Abstract: Embodiments of the present invention are directed to systems for performing surface-enhanced Raman spectroscopy. In one embodiment, a system (100, 400, 600, 800, 900, 950) for performing Raman spectroscopy comprises a substrate (102) substantially transparent to a range of wavelengths of electromagnetic radiation and a plurality of nanowires (104, 602) disposed on a surface of the substrate. The nanowires are substantially transparent to the range of wavelengths of electromagnetic radiation. The system includes a material disposed on each of the nanowires. The electromagnetic radiation is transmitted within the substrate, into the nanowires, and emitted from the ends of the nanowires to produce enhanced Raman scattered light from molecules located on or in proximity to the material.

Abstract: A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.

Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.

Abstract: A light emitting substrate configured to enhance luminance of an image display apparatus is disclosed. The light emitting substrate includes a transparent substrate, a photonic crystal structure, a transparent anode, a light emitting layer having a diffuse reflectance of 0.04% or less and having a side reflecting member at a side thereof. The photonic crystal structure, the transparent anode, and the light emitting layer are successively laminated in this order on the transparent substrate. The light emitting substrate satisfies the following Condition 1 or Condition 2: Condition 1: 95?c, and 40?a<100 Condition 2: 85?c<95, and 80?a<100 where a is a relative area of the photonic crystal structure to that of the light emitting layer, and c is a reflectance of the side reflecting member.

Abstract: Provided is a tunable radiation emitting structure comprising: a nanoamorphous carbon structure having a plurality of relief features provided in a periodic spatial configuration, wherein the relief features are separated from each other by adjacent recessed features, and wherein the nanoamorphous carbon comprises a total of from 0 to 60 atomic percent of one or more dopants of the dopant group consisting of: transition metals, lanthanoids, electro-conductive carbides, silicides and nitrides. In one embodiment, a dopant is selected from the group consisting of: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La and other lanthanides, Hf, Ta, W, Rh, Os, Ir, Pt, Au, and Hg. In one embodiment, a dopant is selected from the group consisting of: electro-conductive carbides (like Mo2C), silicides (like MoSi2) and nitrides (like TiN).

Abstract: An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Abstract: An organic light emitting device enables improvement on the loss of optical extraction efficiency due to total reflection and optical waveguide effects. The organic light emitting device has a structure wherein a first electrode, an organic substance layer, and a second electrode are sequentially laminated on a substrate, a random nano structure having a fine pattern of a peaks-and-valleys shape is formed between a substrate and a first electrode to extract any light that is wasted due to total reflection and an optical waveguide mode to the outside of the substrate so that an organic light emitting device with improved external quantum efficiency can be realized, and optical extraction patterns and color changes due to visual field angles can also be improved.

Abstract: The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).

Abstract: The present invention discloses a system and method for generating a beam of fast ions. The system comprising: a target substrate having a patterned surface, a pattern comprising nanoscale pattern features oriented substantially uniformly along a common axis; and; a beam unit adapted for receiving a high power coherent electromagnetic radiation beam and focusing it onto said patterned surface of the target substrate to cause interaction between said radiation beam and said substrate enabling creation of fast ions.

Abstract: A heat sink includes a thermally conductive layer comprising at least one of fullerenes and nanotubes disposed in a polymeric host. The thermally conductive layer may be disposed on a heat sink body, which may be thermally insulating and/or plastic, and may include surface area enhancing heat radiating structures, such as fins, with the thermally conductive layer being disposed over at least the surface area enhancing heat radiating structures. A light emitting diode (LED)-based lamp embodiment includes the heat sink and an LED module including one or more LED devices secured with and in thermal communication with the heat sink. A method embodiment includes forming the heat sink body and disposing the thermally conductive layer on the heat sink body. The disposing may comprise spray coating. An external energy field may be applied during spray coating to impart a non-random orientation to nanotubes in the polymeric host.

Abstract: Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot.

Abstract: An RF device is provided. The RF device includes a vibratile carbon nanotube having a nanotube natural frequency (f0), a negative electrode fixed to a first end of the carbon nanotube, a vibratile tuning electrode having a variable resonance frequency and facing a second end of the carbon nanotube, and a positive electrode electrically connected to a first end of the tuning electrode. A second end of the tuning electrode is adjacent to the second end of the carbon nanotube, and the carbon nanotube vibrates at a carrier frequency according to an external electromagnetic wave having the carrier frequency, and the tuning electrode having variable resonance frequency characteristics amplifies distance variation between the second end of the carbon nanotube and the second end of the tuning electrode to increase an electron emission sensitivity according to field emission.

Abstract: A quantum dot organic light emitting device and a method of manufacturing the same are disclosed. A first electrode layer is formed on a substrate. A block copolymer film which can cause phase separation on the first electrode layer is formed. The block copolymer film is phase-separated into a plurality of first domains, each having a nano size column shape, and a second domain which surrounds the first domains. A quantum dot template film of the second domain, which comprises a plurality of nano size through holes, is formed by selectively removing the first domains. Quantum dot structures, each of which comprises an organic light emitting layer in the through hole of the quantum dot template film, is formed.

Abstract: The present invention relates to a micro-composite pattern lens and to a method for manufacturing same. The micro-composite pattern lens of the present invention has a micro-composite pattern with one or more protrusions formed on one side of the lens having a predetermined curvature, and optical polymer nanoparticles arranged in the lens. The micro-composite pattern of the lens may form a wider angle of light emission, thus enabling an LED source, which is a point light source, to be converted into a surface light source having superior luminous intensity uniformity. The lens of the present invention is advantageous in that a single lens may serve as a light guide plate, a prism plate, and a diffusion plate, this eliminating the necessity of stacking optical plates, which might otherwise be required for conventional backlight units.

Abstract: Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced.

Abstract: An electrospray ion source for a mass spectrometer includes an electrode comprising at least a first plurality of protrusions protruding from a base, each protrusion of the at least a first plurality of protrusions having a respective tip; a conduit for delivering an analyte-bearing liquid to the electrode; and a voltage source, wherein, in operation of the electrospray ion source, the analyte-bearing liquid is caused to move, in the presence of a gas or air, from the base to each protrusion tip along a respective protrusion exterior so as to form a respective stream of charged particles emitted towards an ion inlet aperture of the mass spectrometer under application of voltage applied to the electrode from the voltage source.

Abstract: A method of predicting formation of an amyloid plaque in a peptide sample is disclosed. The method comprises determining presence of quantum confinement in the sample, and predicting that formation of an amyloid plaque is likely to occur if the sample exhibits quantum confinement.

Abstract: A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elements of compound semiconductor.

Abstract: Semiconductor nanowire arrays are used to replace the conventional planar layered construction for fabrication of LEDs and laser diodes. The nanowire arrays are formed from III-V or II-VI compound semiconductors on a conducting substrate. For fabrication of the device, an electrode layer is deposited on the substrate, a core material of one of a p-type and n-type compound semiconductor material is formed on top of the electrode as a planar base with a plurality of nanowires extending substantially vertically therefrom. A shell material of the other of the p-type and n-type compound semiconductor material is formed over an outer surface of the core material so that a p-n junction is formed across the planar base and over each of the plurality of nanowires. An electrode coating is formed an outer surface of the shell material for providing electrical contact to a current source.

Abstract: A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) situated between the first and the second doped semiconductor layer. The device also includes a first electrode coupled to the first doped semiconductor layer and a second electrode coupled to the second doped semiconductor layer. The device further includes a first passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and the part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. The first passivation layer is formed through an oxidation technique. The device further includes a second passivation layer overlaying the first passivation layer.

Abstract: One embodiment of the present invention provides a semiconductor light-emitting device which includes: a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, a multi-quantum-well (MQW) active layer situated between the first and the second doped semiconductor layers. The device further includes a first electrode coupled to the first doped semiconductor layer, a second electrode coupled to the second doped semiconductor layer, and a silicone protective layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.

Abstract: Self-healing photocathode device comprising a photoemissive multi-alkali semiconductor comprising a multi-alkali antimonide having the formula AxBy CzSb, where A, B and C are Group I alkali metals and x+y+z=3; a nanostructured porous membrane, one surface of which is in direct contact with the multi-alkali semiconductor and the opposing surface of which is disposed toward the inside of a sealed reservoir, such that the porous membrane and the sealed reservoir form a volume which is maintained at low pressure; a temperature control means in contact with the porous membrane, wherein the temperature control means regulates the temperature of the porous membrane at 200° C. or less; a source comprising elemental cesium which is releasable into the enclosed volume; and, a current conducting means attached to the source.

Abstract: Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

Abstract: A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than ?sec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope.

Abstract: The present invention relates to flexible devices including semiconductor nanocrystals, arrays including such devices, systems including the foregoing, and related methods. In one embodiment, a flexible light-emitting device includes a flexible substrate including a first electrode, an emissive layer comprising semiconductor nanocrystals disposed over the substrate, and second electrode disposed over the emissive layer comprising semiconductor nanocrystals, wherein, when the device is curved, the emissive layer comprising semiconductor nanocrystals lies substantially in the neutral plane of the device. In another embodiment, a light-emitting device includes an emissive layer comprising semiconductor nanocrystals disposed between two flexible substrates, a first electrode disposed over the emissive layer comprising semiconductor nanocrystals, and a second electrode disposed under the emissive layer comprising semiconductor nanocrystals.

Abstract: Systems and methods for performing transmission microscopy on a sample material are disclosed. The sample material is placed on a metal nanoparticle substrate. High intensity light, such as an infrared laser, is focused on the nanoparticle substrate, thereby exciting the silver nanoparticles. The excited nanoparticles emit intensely focused, spectrally broad white light that is able to pass through the sample material without significant scattering even when the sample material is highly diffuse. The emitted light that passes through the sample material is detected and used to generate images and characterize features of the sample material, including the internal structural composition of the sample material.

Abstract: A photonic sensor system is provided. The system generally includes a beta emission source, optionally, a scintillation layer, and a luminophore-containing sensory layer. The system can be embodied in a particle. Also provided are photonic sensor strategies which are highly accurate and photonic sensors which are highly stable.

Abstract: A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment selectively disposed at a predetermined location within a resonant cavity that is configured to resonate at least one wavelength of electromagnetic radiation emitted by the segment within a range extending from about 300 nanometers to about 2,000 nanometers. Active nanoparticles are precisely positioned in resonant cavities by growing segments of nanowires at known growth rates for selected amounts of time.

Abstract: X-ray systems for use in high-resolution imaging applications with an improved power rating are provided. An X-ray source comprises at least one integrated actuator unit (206, 206?, 206a or 206b) for performing at least one translational and/or rotational displacement by moving the position of the X-ray source's anode (204, 204?, 204a? or 204b?) relative to a stationary reference position. This helps to overcome power limitations due to an overheating of the anode at its focal ?spot position (205). In addition to that, a focusing unit (203) for allowing an adapted focusing of the anode's focal spot (205) which compensates deviations in the focal spot size resulting from said anode displacements and/or a deflection means (211, 21 Ia or 21 Ib) for generating an electric and/or magnetic field deflecting the electron beam (202, 202a or 202b) in a direction opposite to the direction of the rotary anode's displacement movement may be provided.

Abstract: An X-ray tube (1) comprising a cathode (3), an anode (5) and a further electrode (7) is proposed. Therein, the further electrode is arranged and adapted such that, due to impact of ‘free electrons (27) coming from the anode (5), the further electrode (7) negatively charges to an electrical potential lying between a cathode's potential and an anode's potential. The further electrode (7) may be passive, i.e. substantially electrically isolated and not connected to an active external voltage supply. The further electrode (7) may act as an ion pump removing ions from within a primary electron beam (21) and furthermore also removing atoms of residual gas within the housing (11) of the X-ray tube (1). In order to further increase the ion pumping capability of the further electrode (7), a magnetic field generator (61) can be arranged adjacent to the further electrode (7).

Abstract: A field emission lamp and method of fabricating the same are disclosed, the field emission lamp of the present invention comprising a lamp tube, an anode, at least one auxiliary electrode, a cathode, and an emitter layer. The anode comprises a transparent conductive layer and a phosphor layer, and the transparent conductive layer is made of ITO, IZO, AZO, GZO, zinc oxide, or the combination thereof. The auxiliary electrode of the field emission lamp of the present invention can shorten the electron transportation path length, increase the electron transportation efficiency, reduce the phenomenon of micro-discharges caused by electron charging, reduce the voltage loss, reduce the temperature increase of the phosphor layer and elongate the lifetime of the field emission lamp.

Abstract: A method for fabrication of substrate having a nano-scale surface roughness is presented. The method comprises: patterning a surface of a substrate to create an array of spaced-apart regions of a light sensitive material; applying a controllable etching to the patterned surface, said controllable etching being of a predetermined duration selected so as to form a pattern with nano-scale features; and removing the light sensitive material, thereby creating a structure with the nano-scale surface roughness. Silanizing such nano-scale roughness surface with hydrophobic molecules results in the creation of super-hydrophobic properties characterized by both a large contact angle and a large tilting angle. Also, deposition of a photo-active material on the nano-scale roughness surface results in a photocathode with enhanced photoemission yield. This method also provides for fabrication of a photocathode insensitive to polarization of incident light.

Abstract: A method for preparation of carbon nanotubes (CNTs) bundles for use in field emission devices (FEDs) includes forming a plurality of carbon nanotubes on a substrate, contacting the carbon nanotubes with a polymer composition comprising a polymer and a solvent, and removing at least a portion of the solvent so as to form a solid composition from the carbon nanotubes and the polymer to form a carbon nanotube bundle having a base with a periphery, and an elevated central region where, along the periphery of the base, the carbon nanotubes slope toward the central region.

Abstract: A portable and/or mobile detector for highly enriched uranium (HEU) and weapon grade plutonium (WGPu) is disclosed the detects HEU and/or WGPu based on neutron induced fission of a portion of the HEU and/or WGPu and detecting delayed neutron and/or ?-rays emission from delayed neutron emitters formed from the induced fission reactions.

Abstract: The present invention provides a luminescent fiber, which retains a certain shape with assembled nanoparticles, and a method for producing the luminescent fiber. Specifically, the present invention provides a luminescent fiber comprising silicon and semiconductor nanoparticles having a mean particle size of 2 to 12 nm, the luminescent fiber having a diameter of 20 nm to 2 ?m, a length of 40 nm to 500 ?m, an aspect ratio of 2 to 1,000, and photoluminescence efficiency of not less than 5%.

Abstract: A radiation therapy device having a therapeutic radiation source and an imaging unit is provided. The imaging unit includes a plurality of diagnostic radiation sources, from which diagnostic X-ray radiation are directed onto an object to be examined, and a diagnostic radiation detector, with which the diagnostic X-ray radiation is detected after passing through the object to be examined. The plurality of diagnostic radiation sources are X-ray radiation sources that are based on carbon nanotubes. A radiation therapy device having a housing, in which a diagnostic radiation source, a diagnostic radiation detector, and a therapeutic radiation source that is rotated in one plane are arranged, is also provided. The diagnostic radiation source and the diagnostic radiation detector are arranged in the housing such that diagnostic X-ray radiation, which is directed by the diagnostic radiation source onto the diagnostic radiation detector, travels at an angle through the plane.

Abstract: Described is an X-ray rotating anode plate having a base and X-ray active layer having the described acceptable properties and a method for producing same. The base comprises carbon nanoparticles in quasi-homogeneous spatial distribution. Carbon nanoparticles can be selected from among carbon nanotubes, nano-graphite powder particles having a substantially spherical shape, and mixtures thereof. The inclusion of described additives improves the stability and heat conductivity of the base. With the described method, the starting materials for the base and X-ray active layer, and other optional materials which may form functional layer are compressed to a preselected shape in a pressing mold with simultaneous application of pressure, elevated temperature and varied electric currents, compressing the shape to a final density exhibiting high-strength diffusion bonds between these starting materials.

Abstract: A quantum nanodot camera, comprising: a quantum nanodot camera sensor including: at least one visible pixel sensor configured to capture scenes including actors and/or objects in a visible band; and at least one IR pixel sensor configured to capture motions of at least one quantum nanodot (QD) marker tuned to emit a narrowband IR signal.

Abstract: A solid state white light emitting device includes a semiconductor chip producing near ultraviolet (UV) electromagnetic energy in a range of 380-420 nm, e.g. 405 nm. The device may include a reflector forming and optical integrating cavity. Phosphors, such as doped semiconductor nanophosphors, within the chip packaging of the semiconductor device itself, are excitable by the near UV energy. However the re-emitted light from the phosphors have different spectral characteristics outside the absorption ranges of the phosphors, which reduces or eliminates re-absorption. The emitter produces output light that is at least substantially white and has a color rendering index (CRI) of 75 or higher. The white light output of the emitter may exhibit color temperature in one of the following specific ranges along the black body curve: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245° Kelvin; 3,985±275° Kelvin; 4,503±243° Kelvin; 5,028±283° Kelvin; 5,665±355° Kelvin; and 6,530±510° Kelvin.

Abstract: An incandescent light source display includes a substrate, a plurality of first electrode down-leads, a plurality of second electrode down-leads and a plurality of heating units. The plurality of first electrode down-leads are located on the substrate in parallel to each other and the plurality of second electrode down-leads are located on the substrate in parallel to each other. The first electrode down-leads cross the second electrode down-leads and corporately define a grid having a plurality of cells. Each of the incandescent light sources is located in correspondence with each of the cells. Each incandescent light source includes a first electrode, a second electrode and an incandescent element. The incandescent element includes a carbon nanotube structure.

Abstract: Plasmon-enable devices such as ultra-small resonant devices produce electromagnetic radiation at frequencies in excess of microwave frequencies when induced to resonate by a passing electron beam. The resonant devices are surrounded by one or more depressed anodes to recover energy from the passing electron beam as/after the beam couples its energy into the ultra-small resonant devices.

Abstract: A polymer dispersed display apparatus includes a polymer layer, and a plurality of liquid crystal drops dispersed in the polymer layer. Quantum dots emitting a plurality of colors of light are mixed in the liquid crystal drops. Therefore, the polymer dispersed display apparatus displays colors without the need for a color filter. Thus, the polymer dispersed display apparatus need not include a polarization plate and a color filter, so that a light usage efficiency of the polymer dispersed display apparatus increases.

Abstract: A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer.