Abstract: A device for interfacing neurons includes a substrate that defines at least one via passing therethrough. The via is configured to allow at least one neurite to grow therethrough. A light generating unit is disposed adjacent to the substrate and is configured to generate light of a predetermined frequency when an action potential from the neurite is sensed. A light sensor that is spaced apart from the substrate is configured to assert a neural signal corresponding to the action potential when the light generating unit generates light of the predetermined frequency.

Abstract: A method and system of retro-emission include a microlens array to focus light of a first wavelength on a layer of luminescent material configured to emit light of a second wavelength when excited by a light of the first wavelength.

Abstract: A light emissive printed articles (101) include printing with ink that includes quantum dots in lieu of pigment. A pump light that emits light with photon energies sufficient to excite the quantum dot ink (102) is used to drive light emission.

Abstract: The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire.

Abstract: Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device may include an interface through which emitted light passes therethrough. The interface having a dielectric function that varies spatially according to a pattern, wherein the pattern is arranged to provide light emission that has a substantially isotropic emission pattern and is more collimated than a Lambertian distribution of light.

Abstract: Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device may include an interface including a first region and a second region. The first region having a dielectric function that varies spatially according to a first pattern, and the second region having a dielectric function that varies spatially according to a second pattern, wherein the second pattern is a rotation of the first pattern. A method of forming a light-emitting device is provided. The method comprises forming an interface comprising a first region and a second region. The first region having a dielectric function that varies spatially according to a first pattern, and the second region having a dielectric function that varies spatially according to a second pattern, wherein the second pattern is a rotation of the first pattern.

Abstract: A coupled nano-resonating structure includes a plurality of a nano-resonating substructures constructed and adapted to couple energy from a beam of charged particles into said nano-resonating structure and to transmit the coupled energy outside said nano-resonating structure. The nano-resonant substructures may have various shapes and may include parallel rows of structures. The rows may be symmetric or asymmetric, tilted, and/or staggered.

Abstract: An optical memory cell having a material layer associated with a pixel capable of emitting and receiving light. The material layer has phosphorescent material formed therein for storing data as light received from and emitted to the pixel.

Abstract: A backlight system (20) includes a light guide plate (220), a reflector (230) disposed below the light guide plate, and an LED (210) emitting light beams into the light guide plate. The LED includes an LED chip (213), which has a base (2131), a film layer (2132), a protecting layer (2133), and an organic layer (2134) sequentially stamped on a first electrode (212) from bottom to top. The LED chip further has an optical crystal structure including a plurality of micro-holes (2135) which run through the film layer, the protecting layer and the organic layer.

Abstract: A light emitting device including a transistor structure formed on a semiconductor substrate. The transistor structure having a source region, a drain region, a channel region between the source and drain regions, and a gate oxide on the channel region. The light emitting device including a plurality of nanocrystals embedded in the gate oxide, and a gate contact made of semitransparent or transparent material formed on the gate oxide. The nanocrystals are adapted to be first charged with first type charge carriers, and then provided second type charge carriers, such that the first and second type charge carriers form excitons used to emit light.

Abstract: A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an electroluminescent layer overlying the p+/n+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II–VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.

Abstract: The device implements nanotechnology by embedding nanocircuits with sensors to surfaces such as walls, wall coverings, clothing, windows, window coverings, flooring, roofs, roadways and telephone poles. Using a plurality of nanocircuits in a multitude of locations, events can be continuously detected and recorded without intrusion, and reconstructed at a later time.

Abstract: A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together.

Abstract: This invention pertains to an x-ray microprobe that can be placed very close the sample surface. A practical implementation is an x-ray target material integrated to an atomic force microscope (AFM) tip and an electron beam is focused to the target materials to generate x-ray emission. This microprobe can be combined with energy-resolved detector or a fluorescence imaging system for material analysis applications.