Abstract: A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer.

Abstract: Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.

Abstract: A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires.

Abstract: A system and method for imaging objects with a sparse detector array that includes fewer detectors than conventional x-ray scanning systems. The sparse detector array is positioned to receive x-ray radiation from the at least one x-ray source after passing through an inspection area. The sparse detector array includes a plurality of rows of detector elements, wherein at least some of the plurality of rows are separated by gaps such that the at least some of the plurality of rows are non-contiguous. An iterative reconstruction process is used to determine a volumetric image of the object from the radiation measurements recorded by the detectors in the sparse detector array.

Abstract: The invention relates to light-emitting devices, and related components, systems and methods. In one aspect, the present invention is related to light emitting diode (LED) light extraction efficiency. A non-limiting example, the application teaches a method for improving light emitting diode (LED) extraction efficiency, by providing a nano-rod light emitting diode; providing quantum wells; and reducing the size of said nano-rod LED laterally in the quantum-well plane (x and y), thereby improving LED extraction efficiency.

Abstract: A light emitting diode (LED) package and a method of fabricating an LED package are provided. The LED package can include a transparent substrate and an LED arranged on the transparent substrate. A reflective layer and/or a polarizing layer can also be included. The LED may be disposed on one surface of the transparent substrate with the reflective layer and/or polarizing layer formed on an opposing surface of the transparent substrate. The fabrication method may include forming an LED on one surface of a transparent substrate by mounting a flip-chip on the transparent substrate or vapor-depositing the LED directly on the transparent substrate. A multi-package stacked structure can also be provided wherein a plurality of LED packages are stacked together unidirectionally or bidirectionally, with or without a reflective layer and/or a polarizing layer.

Abstract: An antenna module capable includes a substrate unit and an antenna unit. The substrate unit includes at least one carrier substrate having a dielectric constant substantially between 7 and 13. The carrier substrate includes a dielectric body and a plurality of nano-scale microparticle structures distributed inside the dielectric body, and each nano-scale microparticle structure includes at least one nano-scale carbon particle and a nano-scale insulating encapsulation layer for totally encapsulating the nano-scale carbon particle. The antenna unit includes at least one antenna track disposed on the carrier substrate. The antenna track has an antenna usage volume that is adjustable within a predetermined volume range according to the VSWR value and the antenna efficiency maintained within a first and a second predetermined ranges, and the antenna track has at least one feeding portion and at least one grounding portion.

Abstract: The invention provides a lighting device comprising (a) a transparent waveguide plate (200), with first surface (201), opposite second surface (202), and edge surface between the first surface and the second surface, (b) a light source (300) for providing light source light towards a light incoupling surface of the transparent waveguide plate, configured to provide at least part of the light source light in a direction perpendicular to one or more of the first surface and the second surface. The transparent waveguide plate further comprises a luminescent material, (400) configured to convert at least part of the light source light into luminescent material emission, and light outcoupling means (220) for coupling luminescent material emission and optionally light source light out of the transparent waveguide plate as lighting device light in a direction away from one or more of the first surface and the second surface.

Abstract: An electronic device comprising a quantum dot and an organic host, a mixture comprising a quantum dot and an organic host, a quantum dot, a method for preparing a quantum dot (QD), and a formulation including the mixture or the quantum dot are provided.

Abstract: A liquid crystal display is provided. A liquid crystal display according to an exemplary embodiment of the present invention includes a first substrate, a second substrate facing the first substrate, and a liquid crystal layer interposed between the first substrate and the second substrate, wherein the liquid crystal layer includes liquid crystal molecules and nanoparticles including a hydrophobic group having a chain structure and a hydrophilic group.

Abstract: A nanofabric antenna is provided. The nanofabric antenna can include a fabric and a plurality of conductive nanowires extending outwardly from the fabric with the conductive nanowires forming a random array of monopoles. In this manner, an antenna can he included as part of a piece of clothing and/or a piece of fabric used or worn by an individual.

Abstract: An organic light emitting display device may include a substrate, a first electrode, a light emitting structure, a second electrode and a nanostructure. The first electrode may be disposed over the substrate. The light emitting structure may be disposed over the first electrode. The second electrode may be disposed over the light emitting structure. A plurality of nanoparticles may be disposed over the second electrode. The plurality of nanoparticles is capable of causing surface plasmon resonance by light. At least some of the plurality of nanoparticles have materials, sizes and shapes determined to cause surface plasmon resonance by light having a predetermined wavelength and emitted from the light emitting structure.

Abstract: Embodiments of the disclosed technique disclose an optical device generating light by luminescence comprising a substrate, a waveguide, a pump light source and a photoluminescent layer, wherein the waveguide is positioned between the substrate and the photoluminescent layer, or the photoluminescent layer is positioned between the substrate and the waveguide. The pump light source is provided opposite to the photoluminescent layer at the backside of the substrate. The pump light source is adapted to pump the photoluminescent layer to emit light; and at least some of the emitted light is evanescently coupled into the waveguide.

Abstract: A camouflage material comprising an electromagnetic energy (EME) absorbing layer comprising an array of carbon nanotubes and a plurality of energy transmitting elements embedded within the absorbing material. The energy transmitting elements are operative to convey energy to at least a portion of an outer surface of the absorbing layer.

Abstract: This invention relates to a backlight assembly having improved heat dissipation performance and a simplified structure and to a display device including the same. The backlight assembly includes a light source unit for generating light, a housing for accommodating the light source unit and having an aperture, a middle frame coupled to the housing and receiving the light source unit, and an LED fixing frame which is adjacent to the light source unit and is coupled to the housing and at least a part of which is exposed through the aperture.

Abstract: Described herein is a time-gated, two-step FRET relay effective to provide temporal transference of a prompt FRET pathway, or provide spectro-temporal encoding analytical signals and other information. A FRET relay assembly includes a long lifetime FRET donor (for example, a lanthanide complex), a semiconductor quantum dot (QD) configured as an intermediate acceptor/donor in FRET, and a fluorescent dye configured as a terminal FRET acceptor, wherein the long lifetime FRET donor has an excited state lifetime of at least one microsecond and the QD and fluorescent dye each have excited state lifetimes of less than 100 nanoseconds.

Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped.

Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

Abstract: Disclosed are a semiconductor nanowire solid state optical device and a control method thereof. The device comprises a nanowire, a first electrode, a second electrode, an electrical circuit and a mechanical micro device. The nanowire has a first end and a second end. The first electrode is coupled to the first end. The second electrode is coupled to the second end. The electrical circuit is coupled to the first electrode and the second electrode. The mechanical micro device is conjuncted with the nanowire for applying an external force to the nanowire to form highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) in the nanowire. The HOMO and LUMO are employed as an n-type semiconductor and a p-type semiconductor, respectively. The nanowire is a semiconductor when an external force is applied thereto.

Abstract: An optoelectronic device includes: an active semiconductor area (84) for the radiative recombination of electron-hole pairs made in the form of at least one nanowire made of an unintentionally doped semiconductor material; a semiconductor area (88) for the radial injection of holes into the or each nanowire, made of a doped semiconductor material having a first conductivity type and a bandgap smaller than the bandgap of the material forming the nanowire; and a semiconductor area (82) for the axial injection of electrons into the or each nanowire, made of a doped semiconductor material having a second conductivity type opposite to the first conductivity type.

Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may be a multi junction solar cell. The optoelectronic device may have a bi-layer electrical interconnect that is physically and electrically connected to sidewalls of the array of nanostructures. The optoelectronic device may be operated as a multi junction solar cell, wherein each junction is associated with one portion of the device. The bi-layer electrical interconnect allows current to pass from one portion to the next. Thus, the bi-layer electrical interconnect may serve as a replacement for a tunnel junction, which is used in some conventional multi junction solar cells.

Abstract: A nanocrystal composite that includes a matrix including semiconductor nanocrystals, and a barrier layer disposed on at least a portion of the surface of the matrix and including a polymer with low oxygen permeability, low moisture permeability, or both.

Abstract: A plurality of electrodes, and carbon nanotubes disposed between the electrodes, at least part of the carbon nanotubes including a metal carbon nanotube are provided. The metal carbon nanotube generates heat upon passing of current to the electrodes and emits light by blackbody radiation, so that the emitted light has a wide emission wavelength region and can be modulated at high speed. This makes it possible to implement a continuum spectrum light source that can be modulated at high speed, which is suitable for use in information communication, electrical and electronic fields.

Abstract: An optical device may include a substrate, a metal layer on the substrate, at least one first nano-structure in the layer, and at least one second nano-structure in the layer. The at least one first nano-structure may include a light source. The at least one first and second nano-structures may be spaced apart. A method of controlling a propagation direction of light output from an optical device that includes a metal layer on a substrate may include disposing first and second nano-structures in the layer; disposing at least one light source in the first nano-structure; and controlling the propagation direction of the light output from the at least one light source by changing at least one of a shape of the first nano-structure, a shape of the second nano-structure, a size of the first nano-structure, a size of the second nano-structure, and an interval between the first and second nano-structures.

Abstract: A single-photon generator contains nitrogen-vacancies or other color centers in diamond as emitters of single photons which are excited by the laser beam or another optical source and can work stably under normal conditions, the metamaterial with hyperbolic dispersion as enhancing environment, and photonic guiding structure to collect and transmit single photons further.

Abstract: An optical/electrical transducer device has housing, formed of a thermally conductive section and an optically transmissive member. The section and member are connected together to form a seal for a vapor tight chamber. Pressure within the chamber configures a working fluid to absorb heat during operation of the device, to vaporize at a relatively hot location as it absorbs heat, to transfer heat to and condense at a relatively cold location, and to return as a liquid to the relatively hot location. The transducer device also includes a wicking structure mounted within the chamber to facilitate flow of condensed liquid of the working fluid from the cold location to the hot location. At least a portion of the wicking structure comprises semiconductor nanowires, configured as part of an optical/electrical transducer within the chamber for emitting light through and/or driven by light received via the transmissive member.

Abstract: A light extraction film having multi-periodic zones of engineered nanostructures. The light extraction film includes a flexible substrate, a layer of low index engineered nanostructures applied to the substrate, and a high index backfill layer applied over the nanostructures. The multi-periodic zones include a repeating zone of the nanostructures having multi-periodic characteristics. The repeating zone includes first and second sets of nanostructures having different periodic pitches. The multi-periodic zones can be used to enhance the light output and tune the angular luminosity of organic light emitting diode devices.

Abstract: A light emitting device includes a light emitting element that emits primary light and a wavelength conversion unit that absorbs part of the primary light and emits secondary light. In the light emitting device, the wavelength conversion unit includes a plurality of types of phosphors that emit secondary light having wavelengths different from each other, and at least one of the phosphors is a covered phosphor covered with a surface film that reflects secondary light emitted from a phosphor other than the covered phosphor.

Abstract: An organic light emitting element includes a first electrode, a second electrode, and an organic layer. The organic layer includes a first emission layer between the first electrode and the second electrode, a second emission layer between the first emission layer and the second electrode, and an electron injection layer (EIL) between the first emission layer and the second emission layer, the electron injection layer (EIL) containing fullerene (C60).

Abstract: Methods for making tin oxide films comprising nano-whiskers comprises providing a solution comprising a tin precursor and a solvent; preparing aerosol droplets of the solution; and applying the aerosol droplets to a heated glass substrate, converting the tin chloride to tin oxide to form a tin oxide film on the glass substrate, wherein the tin oxide film comprises nano-whiskers.

Abstract: A camouflage material comprising an electromagnetic energy (EME) absorbing layer comprising an array of carbon nanotubes and a plurality of energy transmitting element embedded within the absorbing material. The energy transmitting elements are operative to convey energy to at least a portion of an outer surface of the absorbing layer.

Abstract: A color display device that increases the efficiency of use of white light emitted from an organic light-emitting diode (OLED) in producing an improved color display. The device includes a plurality of color OLED display pixels, which include an OLED, a color filter layer, and a color conversion matrix sandwiched between the OLED and the color filter layer. The color filter layer has a plurality of color filter elements including a red, green and blue color filter element. The array of subpixels comprised in the color conversion matrix is composed of semiconductor nanocrystals uniformly dispersed in an organic binding material, which may be employed in either down-emitting or up-emitting color OLED display devices.

Abstract: A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

Abstract: A display apparatus and a backlight assembly are provided. The display apparatus includes a display panel; and a backlight unit disposed on a rear surface of the display panel and discharging light to the display panel, the backlight unit comprising white light emitting diodes (LEDs) and Quantum Dot (QD) LEDs.

Abstract: A light emitting composition includes a light-emitting iridium-functionalized nanoparticle, such as a compound of formula (I). The compound of formula (I) further comprises at least one host attached to the core. A light emitting device includes an anode, a cathode, and a layer containing such a light-emitting composition is also disclosed. In an embodiment, the light emitting device can emit white light.

Abstract: Photovoltaic and Light emitted diode devices comprise of epitaxial wafer of plurality of layers has been proposed. Quantum Dots are deposited onto the micro-nanostructure layer from the light incident direction to increasing light transmission to the active layer. Quantum dots deposited between the light source and the active layer, on the micro-nanostructure layer, to improve light excitation, since it can absorb wavelengths, which are not absorbed by the active layer, and the size and composition of quantum dots can determine its bandgap. A micro-nanostructured layer at the bottom of the PV wafer, which is produced by Molecular Beam Epitaxy (MBE), increases the internal light reflections in the active layer, which increases the efficiency of light absorption and that leads to a photocurrent enhancement.

Abstract: Provided are an emulsion comprising graphene oxide, a first fluid and a second fluid, and a drug delivery system comprising the emulsion. This emulsion is based on the discovery that graphene oxide is an amphiphile with hydrophilic edges and a more hydrophobic basal plane, and thus graphene oxide can act as a surfactant. Since the degree of ionization of the edge —COOH groups of the graphene oxide is affected by pH, the amphiphilicity of graphene oxide can be adjusted based on pH. Therefore, a method of separating a first liquid from a second liquid by providing an emulsion comprising graphene oxide, the first liquid and the second liquid is also provided. It was also discovered that graphene oxide can act as a molecular dispersing agent to process insoluble materials. Based on this discovery, a composition comprising graphene oxide, a solvent and an insoluble solid is provided.

Abstract: Light emitting devices include a light emitting diode (“LED”) and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

Abstract: Coherent electronic current, which can be used to generate coherent radiation, is generated by first generating and transmitting an array of discrete electron beamlets from a nanocathode array along a longitudinal axis. The array of electron beamlets is then focused to reduce the spacing that separates the electron beamlets. The transverse-axis spacing of the electron beamlets is then transferred to the longitudinal axis via an emittance exchange beamline, creating a periodically modulated distribution of coherent electronic current. The coherent electronic current can then be directed into a stream of photons to generate coherent radiation.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, an upper electrode, and a lower electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer. The lower electrode is electrical connected with the first semiconductor layer, and the upper electrode is electrical connected with the second semiconductor layer. A surface of the second semiconductor layer away from the active layer is used as the light extraction surface. A surface of the first semiconductor layer connected with the lower electrode is a patterned surface comprising a plurality of grooves.

Abstract: A light emitting diode includes a substrate, a carbon nanotube layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is adjacent to the substrate. The carbon nanotube layer is located between the first semiconductor layer and the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

Abstract: A light emitting diode includes a second electrode, a first semiconductor layer, an active layer, a second semiconductor layer, a reflector, and a first electrode. The second electrode, the first semiconductor layer, the active layer, the second semiconductor layer, and the reflector are stacked on the first electrode in that order. The first semiconductor layer defines a plurality of grooves on a surface contacting the second electrode. The plurality of grooves form a patterned surface used as the light extraction surface. A carbon nanotube layer is located on the patterned surface and embedded into the grooves.

Abstract: The present invention relates to X-ray generating technology in general. Providing X-radiation having multiple photon energies may help differentiating tissue structures when generating X-ray images. Consequently, an X-ray generating device that allows the switching of a potential of an electron collecting element versus an electron emitting element for providing different energy modes is presented. According to the present invention, an X-ray generating device is provided, comprising an electron emitting element (16) and electron collecting element (20). The electron emitting element (16) and the electron collecting element (20) are operatively coupled for the generation of X-radiation (14). A potential is arranged between the electron emitting element (16) and the electron collecting element (20) for acceleration of electrons from the electron emitting element 16 to the electron collecting element (20), the electrons constituting an electron beam (7).

Abstract: Optical beam modulation is accomplished with the aid of a semiconductive nanomembrane, such as a silicon nanomembrane. A photocathode modulates a beam of charged particles that flow between the carbon nanotube emitter and the anode. A light source, or other source of electromagnetic radiation, supplies electromagnetic radiation that modulates the beam of charged particles. The beam of charged particles may be electrons, ions, or other charged particles. The electromagnetic radiation penetrates a silicon dioxide layer to reach the nanomembrane and varies the amount of available charge carriers within the nanomembrane, thereby changing the resistance of the nanomembrane. As the resistance of the nanomembrane changes, the amount of current flowing through the beam may also change.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: Transparent electrodes, devices incorporating such electrodes, and associated methods are provided. In one aspect, for example, a method for fabricating a transparent electrode can include providing a carbon-insoluble support substrate, forming a carbon-soluble layer on the support substrate, and applying a carbon source to the carbon-soluble layer to form a plurality of graphene layers on the carbon-soluble layer. In another aspect, the method can further include providing a transparent substrate having an adhesive surface, applying the adhesive surface to the plurality of graphene layers such that the transparent substrate is adhered thereto, and removing the carbon-soluble layer and the support substrate from the plurality of graphene layers.

Abstract: Methods and apparatuses to produce graphene and nanoparticle catalysts supported on graphene without the use of reducing agents, and with the concomitant production of heat, are provided. The methods and apparatuses employ radiant energy to reduce (deoxygenate) graphite oxide (GO) to graphene, or to reduce a mixture of GO plus one or more metals to to produce nanoparticle catalysts supported on graphene. Methods and systems to generate and utilize heat that is produced by irradiating GO, graphene and their metal and semiconductor nanocomposites with visible, infrared and/or ultraviolet radiation, e.g. using sunlight, lasers, etc. are also provided.

Abstract: There is herein described a LED lighting device utilizing quantum dots in layers on top of an LED chip. The quantum dots layers and the LED chip are arranged with gradient refractive indices, so that the refractive index of each layer is preferably less than the refractive index of the immediately underlying layer or chip. The quantum dots with emission peaks at longer wavelengths are preferably arranged in lower layers closer to the LED chip; while the quantum dots with emission peaks at shorter wavelengths are arranged in higher layers farther from the LED chip.