Abstract: A sample analysis device capable of realizing the enhancement of a near-field light while increasing a hotspot areal density is provided. In a sample analysis device, multiple nanostructures are arranged on the surface of a base body. A dielectric body is covered with a metal film in each nanostructure. The nanostructures form multiple nanostructure lines. In each nanostructure line, the nanostructures are arranged at a first pitch SP which is smaller than the wavelength of an excitation light and the nanostructure lines are arranged in parallel with one another at a second pitch LP which is greater than the first pitch SP.

Abstract: A nanostructure, an optical device including the nanostructure, and methods of manufacturing the nanostructure and the optical device. A method of manufacturing a nanostructure may include forming a block copolymer template layer and a precursor pattern of metal coupled to the block copolymer template layer on a graphene layer, and forming a metal nanopattern on the graphene layer by removing the block copolymer template layer and reducing the precursor pattern.

Abstract: Provided are an optical device, a detection apparatus, etc., capable of obtaining a sufficiently large enhanced electric field without utilizing coupling between a localized surface plasmon and a propagating surface plasmon. An optical device includes a substrate, a metal layer formed on the substrate, a dielectric layer formed on the metal layer, and multiple metal nanostructures formed on the dielectric layer. When the thickness of the dielectric layer is denoted by d and the polarizability of the metal nanostructures is denoted by ?, the following formulae are satisfied: d>?1/3/2 and d>40 nm.

Abstract: Apparatus, systems, and methods may operate to transmit energy to a nanofiber sampling coil and/or a nanofiber reference coil. Further activity may include receiving the energy as modified by evanescent interaction with a sampled material located proximate to the sampling coil and/or as modified by propagation through the reference coil, and comparing the energy modified by evanescent interaction with the energy modified by propagation through the reference coil to determine a spectroscopic property of the sampled material. Additional apparatus, systems, and methods, including the use of nanofibers and fluorescence induced by evanescent radiation to conduct spectroscopic analysis, are disclosed.

Abstract: Devices (e.g., optoelectronic devices such as solar cells and infrared or THz photodetectors) with a nanomaterial having vertically correlated quantum dots with built-in charge (VC Q-BIC) and methods of making such devices. The VC Q-BIC material has two or more quantum dot layers, where the layers have quantum dots (individual quantum dots or quantum dot clusters) in a semiconductor material, and adjacent quantum dot layers are separated by a spacer layer of doped semiconductor material. The VC-QBIC nanomaterial provides long photocarrier lifetime, which improves the responsivity and sensitivity of detectors or conversion efficiency in solar cells as compared to previous comparable devices.

Abstract: A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate (3) having a surface (31), wherein a region (4) at the surface (31) of the substrate (3) is doped such that a first p-n junction is formed in the substrate (3). The photovoltaic cell has a nanowire (2) that is arranged on the surface (31) of the substrate (3) at a position where the doped region (4) is located in the substrate (3), such that a second p-n junction is formed at the nanowire (2) and in series connection with the first p-n junction.

Abstract: Radiation detectors having nanowires with charged, radiation-labile coatings configured to change the electrical properties of nanowires are provided. In one aspect, a radiation detection device is provided. The radiation detector device includes at least one nanowire having a radiation-labile coating with charged moieties on a surface thereof, wherein the radiation-labile coating is configured to degrade upon exposure to radiation such that the charged moieties are cleaved from the radiation-labile coating upon exposure to radiation and thereby affect a transconductance of the nanowire.

Abstract: A radiographic imaging detector has photoimaging pixels disposed in an array, control electronics for controlling operation of the array to capture radiographic images, and a voltage source for powering the array of photoimaging pixels and the control electronics. A housing with multiple parts encloses at least the array and the control electronics and provides a seating for the voltage source. A first part has a first mating surface, a second part has a second mating surface. The first and second mating surfaces are disposed adjacent to each other and define a gap therebetween with a hydrophobic material deposited along at least one of the first and second mating surfaces.

Abstract: A method and communication system for ophthalmic device manufacturing line is disclosed. More specifically, the communication device may be incorporated in early stages of manufacturing of the ophthalmic device to monitor process controls without delay. In some embodiments, a unique pedigree profile can be stored for an ophthalmic device during manufacturing and correlated with one or more of: design profiles, controlled process parameters, performance, and distribution channels.

Abstract: A radiometer includes a substrate; a radiation absorber disposed on the substrate to absorb radiation; a thermal member disposed on the substrate to change electrical resistance in response to a change in temperature of the radiometer; and a thermal link to connect the radiometer to a thermal reference, wherein the radiation absorber, the thermal member, or a combination comprising at least one of the foregoing includes a plurality of carbon nanotubes, the carbon nanotubes being mutually aligned with respect to the substrate, and the radiometer being configured to detect optical power.

Abstract: A single-walled carbon nanotube-based planar photodetector includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other; a plurality of single-walled carbon nanotubes, each of the plurality of single-walled carbon nanotubes contacting the first electrode and the second electrode; and an adsorbent attached to a surface of at least one of the plurality of single-walled carbon nanotubes, wherein the adsorbent is capable of doping the at least one of the plurality of single-walled carbon nanotubes by photo-excitation.

Abstract: An apparatus for detecting an object capable of emitting light. The apparatus includes a light source and a waveguide. The waveguide includes a core layer and a first cladding layer. At least one nanowell is formed in at least the first cladding layer. The apparatus further includes a light detector. The light detector can detect a light emitted from a single molecule object contained in the at least one nanowell.

Abstract: An apparatus for detecting an object capable of emitting light. The apparatus comprises a light source and a waveguide. The waveguide comprises a core layer and a first cladding layer. At least one nanowell is formed in at least the first cladding layer. The apparatus further comprises a light detector. The light detector can detect a light emitted from a single molecule object contained in the at least one nanowell.

Abstract: The present invention provides a device and system for high-efficiency and low-noise detection of single photons within the visible and infrared spectrum. In certain embodiments, the device of the invention can be integrated within photonic circuits to provide on-chip photon detection. The device comprises a traveling wave design comprising a waveguide layer and a superconducting nanowire atop of the waveguide.

Abstract: Surface plasmon-based nanosensor, comprising: at least one first element of metal, preferably silver or gold, or of semiconductor, the first element being excitable to surface Plasmon resonance, in particular localized surface plasmon resonance, in the presence of electromagnetic radiation from a source, and at least one second element preferably near the first element that in the presence of the electromagnetic radiation is exciton-plasmon coupled to the first element and emits electromagnetic radiation representative of the exciton-plasmon coupling, and systems and methods for sensing photons and chemical or biological agents.

Abstract: An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals.

Abstract: The present invention involves the interaction of radiation with functionalized carbon nanotubes that have been incorporated into various host materials, particularly polymeric ones. The present invention is directed to chemistries, methods, and apparatuses which exploit this type of radiation interaction, and to the materials which result from such interactions. The present invention is also directed toward the time dependent behavior of functionalized carbon nanotubes in such composite systems.

Abstract: The present disclosure provides a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor (CMOS)-compatible growth temperature of around 400° C. Each nanoneedle has a sharp 2 to 5 nanometer (nm) tip, a 600 nm wide base and a 4 micrometer (?m) length. Thus, the disclosed nanoneedles are substantially hexagonal needle-like crystal structures that assume a 6° to 9° tapered shape. The 600 nm wide base allows the typical micro-fabrication processes, such as optical lithography, to be applied. Therefore, nanoneedles are an ideal platform for the integration of optoelectronic devices on Si substrates. A nanoneedle avalanche photodiode (APD) grown on silicon is presented in this disclosure as a device application example. The APD attains a high current gain of 265 with only 8V bias.

Abstract: An apparatus for use in a sensing application includes a body having a cavity containing an opening. The apparatus also includes a plurality of nano-fingers positioned in the cavity and a destructible cover covering the opening in the cavity to protect the plurality of nano-fingers, wherein the destructible cover is to be destroyed to enable access to the plurality of nano-fingers.

Abstract: Photonic nanostructures, light absorbing apparatuses, and devices are provided. The photonic nanostructures include a plurality of photonic nanobars configured to collectively absorb light over an excitation wavelength range. At least two of the photonic nanobars of the plurality have lengths that are different from one another. Each photonic nanobar of the plurality has a substantially small width and a substantially small height relative to the different lengths. A method for forming such may comprise forming a plurality of first photonic nanobars comprising a width and a height that are smaller than a length of the plurality of first photonic nanobars, and forming a plurality of second photonic nanobars comprising a width and a height that are smaller than a length of the second photonic nanobar, wherein the lengths of the plurality of first photonic nanobars and the lengths of the plurality of second photonic nanobars are different from one another.

Abstract: Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light. An IR sensing layer can be incorporated with an OLED to provide IR-to-visible color up-conversion. Improved dark current characteristics can be achieved by incorporating a poor hole transport layer material as part of the IR sensing layer.

Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

Abstract: The present disclosure focuses on Ge nanostructured materials for optoelectronic devices: including high-efficiency quantum dot (QD) photodetectors and Si and Ge heteronanowire solar cells. The common thread among these materials is the use of Ge/Si or Ge/oxide barriers to confine carriers and enhance photoconductive gain in detectors and optical absorption and spectral coverage in solar cells.

Abstract: “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.

Abstract: A silicon nano-crystal biosensor includes a flexible substrate transformed depending on a shape of a body organ, a light emitting device disposed on the flexible substrate and emitting light, and a light detector opposite to the light emitting device on the flexible substrate. The light detector absorbs the emitted light. A length of the flexible substrate is substantially equal to or greater than a radius of curvature of the body organ.

Abstract: Disclosed is an organic photoelectric conversion element having high photoelectric conversion efficiency and high durability. Also disclosed are a solar cell and an optical sensor array, each using the organic photoelectric conversion element. The organic photoelectric conversion element comprises a bulk heterojunction layer wherein an n-type semiconductor material and a p-type semiconductor material are mixed. The organic photoelectric conversion element is characterized in that the n-type semiconductor material is a polymer compound and the p-type semiconductor material is a low-molecular-weight compound.

Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.

Abstract: The invention provides novel Compton camera detector designs and systems for enhanced radiographic imaging with integrated detector systems which incorporate Compton and nuclear medicine imaging, PET imaging and x-ray CT imaging capabilities. Compton camera detector designs employ one or more layers of detector modules comprised of edge-on or face-on detectors or a combination of edge-on and face-on detectors which may employ gas, scintillator, semiconductor, low temperature (such as Ge and superconductor) and structured detectors. Detectors may implement tracking capabilities and may operate in a non-coincidence or coincidence detection mode.

Abstract: A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to inhibits photo-carrier recombination, thus enhancing the photocurrent response. Circuits of 1D nanowire photodetectors include groups of photodetectors addressed by their individual 1D nanowire electrode contacts. Placement of 1D nanostructures is accomplished with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of 1D nanostructures. The 1D nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the 1D nanostructures in predetermined, registered positions on the substrate.

Abstract: A preparation method of silver nanostructure for use as substrate of surface-enhanced Raman scattering (SERS), which can ensure the ‘hot spot’, which provides the considerably very intense electromagnetic field in which the silver nano-structures have uniform average size and very strong forms of particles, by characterizing a variety of conditions such as, for example, concentration of AgNO3 and reductant, reaction temperature, stirring velocity, single dropwise addition quantity, dropwise addition rate, or total dropwise addition quantity, which were unpredictable in the conventional silver nanoparticle preparation method using AgNO3 aqueous solution and NaBH4 reductant, so that the preparation method can be advantageously applied for the mass production of silver nano-structures for use as substrate of SERS because the method can provide multimer form with enhanced SERS signals and reproducibility, and also ability to selectively control the particle size.

Abstract: A method of fabricating an antenna. In one embodiment, the method includes the steps of providing a substrate treated with a plasma treatment, providing a nanoparticle ink comprising nanoparticles, painting the nanoparticle ink on the substrate to form an antenna member in which the nanoparticles are connected, determining a feed point of the antenna member, and attaching an feeding port onto the substrate at the feed point to establish a contact between the feeding port and the antenna member.

Abstract: There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: An apparatus, system, and method are disclosed for a frequency selective imager. In particular, the frequency selective imager includes an array of pixels arranged in a focal plane array. Each pixel includes at least one nanoparticle-sized diameter thermoelectric junction that is formed between nanowires of different compositions. When a nanoparticle-sized diameter thermoelectric junction senses a photon, the nanoparticle-sized diameter thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. In one or more embodiments, the frequency selective imager is a frequency selective optical imager that is used to sense photons having optical frequencies. In at least one embodiment, at least one of the nanowires in the frequency selective imager is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te).

Abstract: An apparatus, system, and method are disclosed for nonlinear optical surface sensing with a single thermo-electric detector. In particular, the system includes at least two signal sources that are co-aligned to propagate photons to the same location on a surface. The system also includes at least one focusing element that focuses a sequence of photons that is reflected from the location on the surface. In addition, the system includes at least one frequency selective electromagnetic detector that detects the sequence of photons that are focused from the focusing element(s). When the frequency selective electromagnetic detector senses a photon, the frequency selective electromagnetic detector emits an electrical pulse that has a voltage that is proportional to the energy level of the photon. Additionally, the system includes a processor that processes the electrical pulses, and de-multiplexes the sequence of emitted electrical pulses based on the electrical pulse voltage of the electrical pulses.

Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.

Abstract: The present disclosure provides solutions to probing an interface. With a noninvasive measuring device provided in one embodiment of the disclosure, an acoustic wave whose frequency is higher than approximately 300 GHz is generated to propagate in a buffering film. With measuring the reflection from the interface of an object to be measured interfacing with the buffering film, it is possible in one embodiment of the disclosure that at least one physical property of the interface may be analyzed, preferably with approximately 0.3 nm resolution.

Abstract: An electrical device comprising (A) a substrate having a surface and (B) a nanohole superlattice superimposed on a portion of the surface is provided. The nanohole superlattice comprises a plurality of sheets having an array of holes defined therein. The array of holes is characterized by a band gap or band gap range. The plurality of sheets forms a first edge and a second edge. A first lead comprising a first electrically conductive material forms a first junction with the first edge. A second lead comprising a second electrically conductive material forms a second junction with the second edge. The first junction is a Schottky barrier with respect to a carrier. In some instances a metal protective coating covers all or a portion of a surface of the first lead. In some instances, the first lead comprises titanium, the second lead comprises palladium, and the metal protective coating comprises gold.

Abstract: The present disclosure provides a method for a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor (CMOS)-compatible growth temperature of around 400° C. Each nanoneedle has a sharp 2 to 5 nanometer (nm) tip, a 600 nm wide base and a 4 micrometer (?m) length. Thus, the disclosed nanoneedles are substantially hexagonal needle-like crystal structures that assume a 6° to 9° tapered shape. The 600 nm wide base allows the typical micro-fabrication processes, such as optical lithography, to be applied. Therefore, nanoneedles are an ideal platform for the integration of optoelectronic devices on Si substrates. A nanoneedle avalanche photodiode (APD) grown on silicon is presented in this disclosure as a device application example. The APD attains a high current gain of 265 with only 8V bias.

Abstract: Provided is an analysis apparatus for a high energy particle and an analysis method for a high energy particle. The analysis apparatus for the high energy particle includes a scintillator generating photons with each unique wavelength by the impinging with a plurality of kinds of accelerated high energy particles, a parallel beam converting unit making the photons proceed in parallel to one another, a diffraction grating panel making the photons proceeding in parallel to one another enter at a certain angle, and refracting the photons at different angles depending on each unique wavelength, and a plurality of sensing units arranged on positions where the photons refracted at different angles from the diffraction grating panel reach in a state of being spatially separated, and detecting each of the photons.

Abstract: Embodiments of the detailed description include optical phantoms for use with ocular surface interferometery (OSI) devices and systems configured to measure tear film layer thickness(es), and related use for calibration. The ocular surface interferometry (OSI) devices, systems, and methods can be used for imaging an ocular tear film and/or measuring a tear film layer thickness (TFLT) in a patient's ocular tear film. The OSI devices, systems, and methods can be used to measure the thickness of the lipid layer component (LLT) and/or the aqueous layer component (ALT) of the ocular tear film. “TFLT” as used herein includes LLT, ALT, or both LLT and ALT. “Measuring TFLT” as used herein includes measuring LLT, ALT, or both LLT and ALT. Imaging the ocular tear film and measuring TFLT can be used in the diagnosis of a patient's tear film, including but not limited to lipid layer and aqueous layer deficiencies.

Abstract: The present invention introduces a detector that is able to detect single microwave photons propagating in a waveguide. The waveguide of the invention is lowered to a temperature where it becomes superconductive. Disposed between a middle wire and a ground plane of the waveguide is a very small piece of a desired normal metal, whereby so-called SN contacts are formed between these materials. A separate reflection measurement circuit is coupled to the normal metal piece. When the impedance of the waveguide is matched to the impedance of the normal metal piece as well as possible, a photon propagating in the waveguide is most likely absorbed in the normal metal. The absorption slightly raises the temperature of the piece, which further changes the impedance observed in a so-called SIN junction between the reflection measurement circuit and the piece.

Abstract: A 3D ultraviolet (UV) imaging LADAR system includes a UV source configured to generate a UV interrogation beam, a sensor configured to receive a UV return beam reflected from a target and to produce an electrical signal, and an imaging module coupled to the sensor and configured to receive the electrical signal and to generate a corresponding 3D image of the target. In one example, the sensor includes a down-shifting device configured to down-shift the UV return beam to a down-shifted light beam of a different wavelength, for example, in the visible or SWIR wavelength ranges.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: An electron multiplier for a system for detecting electromagnetic radiation or an ion flow is disclosed. The multiplier includes at least one active structure intended to receive a flow of incident electrons, and to emit in response a flow of electrons called secondary electrons. The active structure includes a substrate on which is positioned a thin nanodiamond layer formed from diamond particles the average size of which is less than or equal to about 100 nm.

Abstract: A nanothermocouple detector includes a nanowire coupled across two electrodes. The two electrodes are electrically connected to an amplifier. The two electrodes generally have a separation of about five micrometers to about thirty micrometers across which the nanowire is coupled. A focusing element is disposed to admit photons that fall on the focusing element onto the nanowire to heat it. A voltage change across the nanowire caused by the heating of the nanowire by the light is detected by the amplifier. The voltage change corresponds to the energy absorbed from the light by the nanowire. The color of a single photon can be detected using such device. An array of such devices can be used for sensing light on a two-dimensional scale, thereby providing an image showing small variances in the energies of the light impinging upon the detector array.

Abstract: An apparatus, system, and method are disclosed for a frequency selective electromagnetic detector. In particular, the frequency selective electromagnetic detector includes a nanowire array constructed from a plurality of nanowires of different compositions. At least one nanoparticle-sized diameter thermoelectric junction is formed between the nanowires of different compositions. When a nanoparticle-sized diameter thermoelectric junction senses a photon, the nanoparticle-sized diameter thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. In one or more embodiments, the frequency selective electromagnetic detector is a frequency selective optical detector that is used to sense photons having optical frequencies. In at least one embodiment, at least one of the nanowires in the nanowire array is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te).

Abstract: A semiconductor device includes: a photoelectric conversion layer; a continuous or discontinuous cylindrical metal microstructure embedded in the photoelectric conversion layer; and a dielectric film with which an inner side surface and an outer side surface of the metal microstructure are coated.

Abstract: Systems, methods and devices for the efficient photocurrent generation in single- or multi-walled carbon nanotubes, which includes (SWNTs)/poly [3-hexylthiophene-2,5-diyl] (P3HT) hybrid photovoltaics, and exhibit the following features: photocurrent measurement at individual SWNT/P3HT heterojunctions indicate that both semiconducting (s-) and metallic (m-) SWNTs function as excellent hole acceptors; electrical transport and gate voltage dependent photocurrent indicate that P3HT p-dopes both s-SWNT and m-SWNT, and exciton dissociation is driven by a built-in voltage at the heterojunction. Some embodiments include a mm2 scale SWNT/P3HT bilayer hybrid photovoltaics using horizontally aligned SWNT arrays, which exhibit greater than 90% effective external quantum efficiency, among other things, which advantageously provide carbon nanomaterial based low cost and high efficiency hybrid photovoltaics.

Abstract: A sensor apparatus including at least one analog and one digital circuit component and an analog/digital converter for converting analog signals of the analog circuit component into digital signals for the digital circuit component, and vice versa, wherein the analog circuit component and the digital circuit components include at least one module for electronically implementing a function, and wherein one of the modules of the analog circuit component is embodied as a sensor device for detecting optical radiation and one of the modules of the digital circuit component is embodied as a signal processing device for processing digital signals. In order to enable improved integration into application-based sensor devices, the circuit components including the analog/digital converter are integrated as an integrated circuit in a chip and the chip is manufactured as a semiconductor structure using 1-poly technology.

Abstract: A digital quantum dot radiographic detection system described herein includes: a scintillation subsystem and a semiconductor visible light detection subsystem (including a plurality of quantum dot image sensors). In a first preferred digital quantum dot radiographic detection system, the plurality of quantum dot image sensors is in substantially direct contact with the scintillation subsystem. In a second preferred digital quantum dot radiographic detection system, the scintillation subsystem has a plurality of discrete scintillation packets, at least one of the discrete scintillation packets communicating with at least one of the quantum dot image sensors.