Abstract: Silicon grids with electron-transparent SiO2 windows for use as substrates for high-resolution transmission electron microscopy of chemically-modified SiO2 surfaces are fabricated by forming an oxide layer on a silicon substrate. An aperture is defined in the silicon substrate by etching the substrate to the oxide layer. A single substrate can include a plurality of apertures that are in respective frame regions that are defined by one or more channels in the substrate. Structural or chemical functionalizations can be provided, and surface interactions observed via TEM.

Abstract: High-efficiency neutron detector substrate assemblies comprising a first conductive substrate, wherein a first side of the substrate is in direct contact with a first layer of a powder material having a thickness of from about 50 nm to about 250 nm and comprising 10boron, 10boron carbide or combinations thereof, and wherein a conductive material is in proximity to the first layer of powder material; and processes of making said neutron detector substrate assemblies.

Abstract: An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar.

Abstract: A system that incorporates teachings of the present disclosure may include, for example, a memory device having a memory cell to selectively store holes by photon and bias voltage induction as a representation of binary values.

Abstract: The present invention relates to compositions comprising functionalized or un-functionalized multi cyclic hydrocarbons and functional organic compounds, which can be used in different electronic devices. The invention further relates to an electronic device comprising one or more organic functional layers, wherein at least one of the layers comprises at least one functionalized or un-functionalized multi cyclic hydrocarbon. Another embodiment of the present invention relates to a formulation comprising functionalized or un-functionalized multi cyclic hydrocarbons, from which a thin layer comprising at least one functionalized or un-functionalized multi cyclic hydrocarbon can be formed.

Abstract: In certain embodiments, an apparatus for down-converting and detecting photons includes a detector layer and a nanocrystal layer. The nanocrystal layer includes nanocrystals operable to absorb first photons of a higher energy and emit second photons of a lower energy in response to the absorption. The detector layer is configured to detect the second photons. In certain embodiments, a method for manufacturing an apparatus for down-converting and detecting photons includes preparing an outer surface of a substrate. Nanocrystals are disposed outwardly from the outer surface. The nanocrystals are operable to absorb first photons of a higher energy and emit second photons of a lower energy in response to the absorption.

Abstract: A light amplifying device for surface enhanced Raman spectroscopy is disclosed herein. The device includes a dielectric layer having two opposed surfaces. A refractive index of the dielectric layer is higher than a refractive index of a material or environment directly adjacent thereto. At least one opening is formed in one of the two opposed surfaces of the dielectric layer, and at least one nano-antenna is established on the one of the two opposed surfaces of the dielectric layer. A gain region is positioned in the dielectric layer or adjacent to another of the two opposed surfaces of the dielectric layer.

Abstract: Embodiments of the present invention are directed to nanowire-based systems for performing surface-enhanced Raman spectroscopy. In one embodiment, a system comprises a substrate (102) having a surface and a plurality of tapered nanowires (104) disposed on the surface. Each nanowire has a tapered end directed away from the surface. The system also includes a plurality of nanoparticles (110) disposed near the tapered end of each nanowire. When each nanowire is illuminated with light of a pump wavelength, Raman excitation light is emitted from the tapered end of the nanowire to interact with the nanoparticles and produce enhanced Raman scattered light from molecules located in close proximity to the nanoparticles.

Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.

Abstract: A sensing device that produces a Raman signal includes micro-rods or nano-rods arranged on a substrate in a two-dimensional (2D) array, each of the rods having a length in a single row being substantially the same, with the rod length of each row being different from the rod length of each other row. Each row of rods has a respective resonant vibration frequency that varies from row to row. A source of vibration energy, operatively connected to the substrate, excites vibration in each of the rods such that a responding row resonates when an exciting frequency approaches the resonant vibration frequency of the responding row. A method includes exposing the 2D array to a light source and analyzing Raman scattering at each rod of the 2D array to render a Raman map.

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer may be disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.

Abstract: A detector including a layer of scintillation material, a layer of spacer material on the scintillation material, and a spectral purity filter layer on the spacer material.

Abstract: An optical fiber probe includes an optical fiber, a carbon nanotube film structure, and a number of metallic particles. The optical fiber includes a detecting end. The carbon nanotube film structure is located on a surface of the detecting end. The carbon nanotube film structure includes a number of carbon nanotubes joined by van der Waals attractive force therebetween. The metallic particles are located on outer surfaces of the carbon nanotubes.

Abstract: In order to provide the high sensitivity SERS active substrates needed for rapid and sensitive chemical/biological agent detection, the present invention provides a Plasmonic Nano-antenna Array (PNA) substrate with large local electromagnetic field enhancements; a controllable and repeatable nano-fabrication process for creating the PNA surface; and a system design for a compact, portable device capable of using the PNA technology to acquire and analyze target molecular samples. Both 2D and 3D systems are provided.

Abstract: Methods and devices relating to a radiation detector comprising of a gas chamber having a cathode plate and a substrate separated by a gap. An array of nano-tips deposited on the substrate that forms an anode structure for electron charge collection. An external power source in communication with the cathode plate and the substrate, wherein the external power source is capable of generating a plurality of regions and each region includes an electric field near each nano-tip of the array of the nano-tips that results in initiating a radiation induced controlled discharge of electrons and ions from at least one gas or at least one gas mixture. Finally, the plurality of regions include multiple generated electric fields near tips of the array of nano-tips such as CNTs, that communicatively create a conductive path between the cathode plate and the substrate, the radiation detector is capable of determining at least one radiation property.

Abstract: A lateral p-i-n photodetector is provided that includes an array of vertical semiconductor nanowires of a first conductivity type that are grown over a semiconductor substrate also of the first conductivity type. Each vertically grown semiconductor nanowires of the first conductivity type is surrounded by a thick epitaxial intrinsic semiconductor film. The gap between the now formed vertically grown semiconductor nanowires-intrinsic semiconductor film columns (comprised of the semiconductor nanowire core surrounded by intrinsic semiconductor film) is then filled by forming an epitaxial semiconductor material of a second conductivity type which is different from the first conductivity type. In a preferred embodiment, the vertically grown semiconductor nanowires of the first conductivity type are n+ silicon nanowires, the intrinsic epitaxial semiconductor layer is comprised of intrinsic epitaxial silicon, and the epitaxial semiconductor material of the second conductivity type is comprised of p+ silicon.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: An image sensor and a method of forming an image sensor. The image sensor includes an array of pixel cells at a surface of a substrate. Each pixel cell has a photo-conversion device. At least one a micro-electro-mechanical system (MEMS) element including a photonic crystal structure is provided over at least one of the pixel cells. The MEMS-based photonic crystal element is supported by a support structure and configured to selectively permit electromagnetic wavelengths to reach the photo-conversion device upon application of a voltage. As such, the MEMS-based photonic crystal element of the invention can replace or compliment conventional filters, e.g., color filter arrays.

Abstract: The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional bicontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer.

Abstract: Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 ?m or more. An absorption layer 3 has a multiple quantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusing an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less, the diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration.

Abstract: A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate (3) having a surface (31), wherein a region (4) at the surface (31) of the substrate (3) is doped such that a first p-n junction is formed in the substrate (3). The photovoltaic cell has a nanowire (2) that is arranged on the surface (31) of the substrate (3) at a position where the doped region (4) is located in the substrate (3), such that a second p-n junction is formed at the nanowire (2) and in series connection with the first p-n junction.

Abstract: A detection device includes a light-receiving element array and a read-out integrated circuit (CMOS), bumps of the light-receiving element array being bonded to bumps of the read-out integrated circuit, and at least one of the light-receiving element array and the read-out integrated circuit having a concaved surface which faces the other. The bonded bumps positioned in a region near the periphery of the arrangement region of the bonded bumps have a larger diameter and a lower height than those of the bumps positioned in a central region. Therefore, it is possible to prevent bonding failure and insulation failure in the bumps from occurring due to a difference in coefficient of thermal expansion, while securing a small size and low cost.

Abstract: A neutron detector employs a porous material layer including pores between nanoparticles. The composition of the nanoparticles is selected to cause emission of electrons upon detection of a neutron. The nanoparticles have a maximum dimension that is in the range from 0.1 micron to 1 millimeter, and can be sintered with pores thereamongst. A passing radiation generates electrons at one or more nanoparticles, some of which are scattered into a pore and directed toward a direction opposite to the applied electrical field. These electrons travel through the pore and collide with additional nanoparticles, which generate more electrons. The electrons are amplified in a cascade reaction that occurs along the pores behind the initial detection point. An electron amplification device may be placed behind the porous material layer to further amplify the electrons exiting the porous material layer.

Abstract: Systems, methods and devices for the efficient photocurrent generation in single- or multi-walled carbon nanotubes, which includes (SWNTs)/poly [3-hexylthiophene-2,5-diyl] (P3HT) hybrid photovoltaics, and exhibit the following features: photocurrent measurement at individual SWNT/P3HT heterojunctions indicate that both semiconducting (s-) and metallic (m-) SWNTs function as excellent hole acceptors; electrical transport and gate voltage dependent photocurrent indicate that P3HT p-dopes both s-SWNT and m-SWNT, and exciton dissociation is driven by a built-in voltage at the heterojunction. Some embodiments include a mm2 scale SWNT/P3HT bilayer hybrid photovoltaics using horizontally aligned SWNT arrays, which exhibit greater than 90% effective external quantum efficiency, among other things, which advantageously provide carbon nanomaterial based low cost and high efficiency hybrid photovoltaics.

Abstract: Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer.

Abstract: A nanowire array is described herein. The nanowire array comprises a substrate and a plurality of nanowires extending essentially vertically from the substrate; wherein: each of the nanowires has uniform chemical along its entire length; a refractive index of the nanowires is at least two times of a refractive index of a cladding of the nanowires. This nanowire array is useful as a photodetector, a submicron color filter, a static color display or a dynamic color display.

Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.

Abstract: A conductive polymer and a semiconducting carbon nanotube material are combined to form a highly conductive composite. The composite can be used for EMI shielding, optical sensing, optical switching, and other uses.

Abstract: Patterning planar photo-absorbing materials into arrays of nanowires is demonstrated as a method for increasing the total photon absorption in a given thickness of absorbing material. Such a method can provide faster, cheaper, and more efficient photo-detectors and solar cells. A thin nanowire can absorb many more photons than expected from the size of the nanowire. The reason for this effect is that such nanowires support cylindrical particle resonances which can collect photons from an area larger than the physical cross-section of the wire. These resonances are sometimes referred to as Mie resonances or Leaky Mode Resonances (LMRs). The nanowires can have various cross section shapes, such as square, circle, rectangle, triangle, etc.

Abstract: Photoconductive optoelectronic devices, such as photodetectors and photovoltaics, are provided. The devices are sensitized to a particular wavelength (or range of wavelengths) of electromagnetic radiation such that the devices provide increased performance efficiency (e.g., external quantum efficiency) at the wavelength. The devices include a photoconductive semiconductor layer spanning an electrode gap between two electrodes to provide a photoconductive electrical conduit. Abutting the semiconductor layer is a plurality of plasmonic nanoparticles. The improved efficiency of the devices results from wavelength-dependent plasmonic enhancement of device photosensitivity by the plasmonic nanoparticles.

Abstract: In a metallic structure including a metallic nano-chain with plasmon resonance absorption, a metallic nanoparticle forming the metallic nano-chain is formed in a circular, triangle, or rhomboid shape. The wavelength selectivity can be increased also by forming a closed region by mutually linking all of metallic nanoparticles that are mutually linked with bottlenecks. In a photodetector, a photodetection unit including a current detection probe, a nano-chain unit, and a current detection probe is arranged on a substrate. The nano-chain unit is a metallic structure with plasmon resonance absorption, where metallic nanoparticles are mutually linked with bottlenecks. Each current detection probe has a corner whose tip is formed with a predetermined angle, and this corner is arranged to face the tip of the nano-chain unit, i.e., a corner of the metallic nanoparticle. Photodetection with high wavelength selectivity is performed based on a change in the initial voltage of the current-voltage characteristic.

Abstract: An integrated device for enhancing signals in Surface Enhanced Raman Spectroscopy (SERS). The integrated device comprising an array of nanostructures comprising a material, wherein the material is configured to allow light to pass through. The integrated device also comprising SERS active nanoparticles disposed on at least portion of the array of nanostructures and a mirror integrated below a base of the array of nanostructures. The mirror is configured to reflect light passing through the material into the array of nanostructures.

Abstract: Compositions and methods for preparing nucleic acid nanotubes using DNA origami techniques are described, which provide for nanotubes of predictable and uniform length. The nucleic acid nanotubes thus formed are suitable as liquid crystal preparations enabling liquid-crystal NMR spectroscopy of proteins solubilized in detergent.

Abstract: An underwater data transmission system including arrays of nano-meter scaled photon emitters and sensors on an outer surface of an underwater platform. For the emitters, a laser is pulsed to correlate with data packets, providing a beam of photons at a prescribed frequency. Nano-scaled collecting lenses channel the incoming photons to photo-receptors located at a focal plane for the frequency at the base of each lens. A coating on the lenses absorbs photons at the frequency that are not aligned with the longitudinal axes of the lenses or tubes. Nano-wires connect the photo-receptors to a light intensity integrator. The integrator integrates the intensity over a surface area. The output of the integrator is fed to a signal processor to track and process the arriving digital packets.

Abstract: A nanoscale electron shuttle with two elastically mounted conductors positioned within a gap between conductors produces asymmetrical electron conduction between the conductors when the conductors receive an AC signal to provide for rectification, detection and/or power harvesting.

Abstract: According to one embodiment, a carbon nanotube assembly includes a plurality of carbon nanotubes having a length of 10 ?m or less in a major axis direction assembled with a space filling rate of 30% or more.

Abstract: A method for measuring properties of an electromagnetic signal includes following steps. An electromagnetic signal measuring device that includes a carbon nanotube structure is provided. The carbon nanotube structure has a plurality of carbon nanotubes. An electromagnetic signal is received by the carbon nanotube structure in the electromagnetic signal measuring device. The intensity of the electromagnetic signal is measured by a sound produced by the carbon nanotube structure.

Abstract: An apparatus for detecting electromagnetic wave includes an electromagnetic wave sensor, a first electrode and a second electrode spaced from each other and electrically connected to the electromagnetic wave sensor, and a measuring device electrically connected to the first electrode and the second electrode. The electromagnetic wave sensor includes a carbon nanotube structure. The carbon nanotube structure includes a plurality of carbon nanotubes extending along a same direction from the first electrode to the second electrode. The measuring device is capable of measuring resistance of the carbon nanotube structure.

Abstract: A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).

Abstract: A photovoltaic device that includes a substrate and a nanowall structure disposed on the substrate surface. The device also includes at least one layer conformally deposited over the nanowall structure. The conformal layer(s) is at least a portion of a photoactive junction. A method for making a photovoltaic device includes generating a nanowall structure on a substrate surface and conformally depositing at least one layer over the nanowall structure thereby forming at least one photoactive junction. A solar panel includes at least one photovoltaic device based on a nanowall structure. The solar panel isolates such devices from its surrounding atmospheric environment and permits the generation of electrical power. Optoelectronic device may also incorporate a photovoltaic device based on a nanowall structure.

Abstract: The present invention provides a fullerene derivative represented by the following formula (1).

Abstract: An device for Raman spectroscopy such as surface enhanced Raman spectroscopy (SERS) is disclosed herein. Various embodiments may be utilized to prepare a SERS substrate using several deposition techniques such as pulsed laser deposition. Some embodiments optimize coverage, volume, or elements of SERS active metals. The method is a single step inexpensive method for preparing a SERS active substrate. In some embodiments a coating layer underneath the SERS active metals is utilized for additional enhancements.

Abstract: A photovoltaic device is disclosed that includes a transparent front electrode formed by the self-assembly of conductive nanoparticles from an emulsion coated onto a substrate and dried. The nanoparticles self-assemble into a network-like pattern of conductive traces that define randomly-shaped transparent cells. The cells may be filled with various transparent filler materials and additional layers may be present in the device in addition to conventional components. Processes for forming the transparent electrode are also disclosed.

Abstract: The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric.

Abstract: A photonic device, a method of making the device and a nano-scale antireflector employ a bramble of nanowires. The photonic device and the method include a first layer of a microcrystalline material provided on a substrate surface and a second layer of a microcrystalline material provided on the substrate surface horizontally spaced from the first layer by a gap. The photonic device and the method further include, and the nano-scale antireflector includes, the bramble of nanowires formed between the first layer and the second layer. The nanowires have first ends integral to crystallites in each of the first layer and the second layer. The nanowires of the bramble extend into the gap from each of the first layer and the second layer.

Abstract: A metal nanoantenna for use in a biosensing device is disclosed. The metal nanoantenna is arranged to exhibit at least two particle plasmon resonances or surface plasmon resonances (SPRs). The nanoantenna is for use in a sensor and allows detection at low concentration of biological components. In one aspect, the nanoantenna can have an asymmetric structural configuration and spectrally separated resonances. In one aspect, there is a location in its structure providing local electromagnetic field enhancement at all of the SPRs. The metal nanoantenna can be used for background free measuring of a quantity of a biological component.

Abstract: An electromagnetic and/or chemical enhancement which greatly enhances the Raman signal response for Surface Enhanced Raman is directed to molecular probe systems. Such molecular probe systems have many properties that make them ideal as probes for Scanning Probe Microscopy, Atomic Force Microscopy, and many other applications.

Abstract: A photovoltaic device includes a substrate having at least two surfaces and a multilayered film disposed on at least a portion of at least one surface of the substrate. Elongated nanostructures are disposed on the multilayered film. The device incorporates a top layer of the multilayered film contacting the elongated nanostructures that is a tunnel junction. The device has at least one layer deposited over the elongated nanostructures defining a portion of a photoactive junction. A solar panel includes at least one photovoltaic device. The solar panel isolates each such devices from its surrounding atmospheric environment and permits the generation of electrical power.

Abstract: An exemplary touch panel, includes a flexible first substrate, a second substrate opposite to the first substrate, a first electrically conductive layer formed on the first substrate and facing the second substrate, a second electrically conductive layer formed on the second substrate and facing the first substrate, a carbon nanotube film formed on the second electrically conductive layer, a plurality of insulated dot spacers arranged between the first electrically conductive layer and the carbon nanotube film, an infrared sensor array arranged on the second substrate and including a number of infrared sensors corresponding to pixels of the touch panel; and a signal processor receiving signals from the infrared sensors.

Abstract: The present disclosure provides a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor (CMOS)-compatible growth temperature of around 400° C. Each nanoneedle has a sharp 2 to 5 nanometer (nm) tip, a 600 nm wide base and a 4 micrometer (?m) length. Thus, the disclosed nanoneedles are substantially hexagonal needle-like crystal structures that assume a 6° to 9° tapered shape. The 600 nm wide base allows the typical micro-fabrication processes, such as optical lithography, to be applied. Therefore, nanoneedles are an ideal platform for the integration of optoelectronic devices on Si substrates. A nanoneedle avalanche photodiode (APD) grown on silicon is presented in this disclosure as a device application example. The APD attains a high current gain of 265 with only 8V bias.