Of Radiant Energy Patents (Class 977/954)
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Publication number: 20110133088Abstract: A light detection system which comprises an active region between a back contact layer and a front contact layer is disclosed. The active region comprises a quantum well structure having a quantum well between quantum barriers, wherein the quantum well comprises foreign atoms that induce an excited bound state at an energy level which is above an energy level characterizing the quantum barriers.Type: ApplicationFiled: August 19, 2010Publication date: June 9, 2011Applicant: Technion Research & Development Foundation Ltd.Inventors: Asaf ALBO, Gad Bahir, Dan Fekete
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Publication number: 20110133061Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.Type: ApplicationFiled: December 8, 2009Publication date: June 9, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June YU, Munib Wober
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Publication number: 20110133060Abstract: An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may also include a readout circuit which may include a reset transistor, a charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive the light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light beam to the bulk substrate. In the embodiments herein, with the presence of the nanowire photogate and a substrate photogate, light of different wavelengths can be detected.Type: ApplicationFiled: December 8, 2009Publication date: June 9, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June Yu, Munib Wober
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Publication number: 20110123146Abstract: A nano-wire optical block device for amplifying, modulating, and detecting an optical signal in a large-core hollow metallized waveguide. The nano-wire optical block device comprises a substrate with a plurality of nano-wires coupled to the substrate to form the nano-wire optical block. Each properly formed nano-wire is comprised of a p-doped region, an intrinsic region, and an n-doped region. The nano-wire optical block is operable to be inserted into the large-core hollow metallized waveguide to provide at least one of amplifying, modulating, and detecting the optical signal.Type: ApplicationFiled: July 31, 2008Publication date: May 26, 2011Inventors: Sagi Varghese Mathai, Shih-Yuan Wang
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Publication number: 20110116089Abstract: A substrate primarily for SERS determination, the substrate has a number of elongate elements with a density of at least 1×108 elongate elements per cm2 and having metal coated tips. When the elements may be made to lean toward each other, such as by providing a drop of a liquid thereon and allowing the liquid to dry, groups of tips of elongate elements are formed and the Raman enhancement is extremely high.Type: ApplicationFiled: October 25, 2010Publication date: May 19, 2011Inventors: Michael Stenbaek Schmidt, Anja Boisen, Jörg Hübner
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Publication number: 20110114921Abstract: An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.Type: ApplicationFiled: July 11, 2006Publication date: May 19, 2011Inventors: Fan Yang, Stephen R. Forrest
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Publication number: 20110103424Abstract: According to certain embodiments, an electro-magnetic radiation detector includes a sensor coupled to multiple nanostructures and an electro-magnetic radiation indicating device. The nanostructures are adapted to absorb electro-magnetic energy and generate heat according to the absorbed electro-magnetic energy. The sensor is adapted to measure the heat generated by the plurality of nanostructures and to generate a first signal according to the measured heat. The electro-magnetic radiation indicating device is operable to receive the signal from the sensor and indicate a level of electro-magnetic energy absorbed by the plurality of nanostructures according to the received signal.Type: ApplicationFiled: October 28, 2010Publication date: May 5, 2011Applicant: Raytheon CompanyInventor: Timothy J. Imholt
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Publication number: 20110090505Abstract: The present invention relates to a quantum infrared sensor and a gas concentration meter using the same, the quantum infrared sensor having a small and simple device shape and also being capable of performing stable measurement against disturbance changes such as changes in the flow amount and the temperature of gas to be measured. The quantum infrared sensor includes a pair of quantum infrared sensor elements, a pair of optical filters and a holding frame. The pair of optical filters is provided closer to an infrared light source than is the pair of quantum infrared sensor elements. The pair of optical filters is configured to selectively transmit infrared rays in specific different wavelength ranges, respectively. The pair of optical filters is housed in an upper level of the holding frame and provided while facing the pair of quantum infrared sensor elements through a pair of through holes, respectively.Type: ApplicationFiled: June 4, 2009Publication date: April 21, 2011Inventors: Naohiro Kuze, Seiichi Tokuo, Yoshinori Yanagita
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Publication number: 20110085166Abstract: Provided herein are new methods and apparatus for quantitative measurement and analysis of particles, including new apparatus systems to process and detect nanoparticles in suspension. By focusing a laser beam at the center of a reservoir, nanoparticles are concentrated by optical energy, and fluorescent intensity at the focal point of the laser is measured to quantify particle concentration in the reservoir. The techniques may be applied to the analysis of suspensions of nanoparticles, including natural particles (e.g., microorganisms including whole viruses, bacteria, animal cells, and proteins) and synthetic particles (e.g., colloidal latexes, paints, pigments, and metallic or semiconductor nanoparticles) for medical and industrial applications, among others.Type: ApplicationFiled: March 2, 2009Publication date: April 14, 2011Applicant: LEHIGH UNIVERSITYInventors: H. Daniel Ou-Yang, Xuanhong Cheng
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Publication number: 20110079706Abstract: A quantum tunneling photodetector array and a method of generating an image. The photodetector array comprises an array of pairs of opposing first and second electrodes; a photo-sensitive insulating material disposed between the opposing first and second electrodes of the respective pairs; an electrical circuit for detecting photo-assisted quantum tunneling currents between the opposing first and second electrode of the respective pairs.Type: ApplicationFiled: December 18, 2007Publication date: April 7, 2011Inventor: Marek T. Michalewicz
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Patent number: 7915598Abstract: An electromagnetic signal measuring device includes a carbon nanotube structure. The carbon nanotube structure is capable of producing a sound by absorbing an electromagnetic signal. The electromagnetic signal measuring device is able to determine the intensity and polarization of the electromagnetic signal.Type: GrantFiled: September 3, 2009Date of Patent: March 29, 2011Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Kai-Li Jiang, Lin Xiao, Zhuo Chen, Shou-Shan Fan
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Publication number: 20110069308Abstract: Embodiments of the present disclosure relate to methods of melamine detection and quantification. In particular, embodiments of the present disclosure include the detection of very low concentrations of melamine using silver nanorod array substrates fabricated by oblique angle deposition (OAD) technique.Type: ApplicationFiled: June 11, 2010Publication date: March 24, 2011Inventors: Yiping Zhao, Xiaobing Du
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Publication number: 20110062416Abstract: A nanowire-based photodiode and an interdigital p-i-n photodiode use an i-type semiconductor nanowire in an i-region of the photodiode. The nanowire-based photodiode includes a first sidewall of a first semiconductor doped with a p-type dopant, a second sidewall of the first semiconductor doped with an n-type dopant, and an intrinsic semiconductor nanowire that spans a trench between the first and second sidewalls. The trench is wider at a top than at a bottom adjacent to a substrate. The first semiconductor of one or both of the first sidewall and the second sidewall is single crystalline and together the first sidewall, the nanowire and the second sidewall form a p-i-n semiconductor junction of the photodiode.Type: ApplicationFiled: May 5, 2008Publication date: March 17, 2011Inventors: Shih-Yuan Wang, Michael R. Tan
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Publication number: 20110063612Abstract: A Raman detecting system for detecting a vapor of an explosive includes a surface-enhanced Raman scattering substrate for absorbing the vapor of the explosive. The substrate includes a carbon nanotube film structure and a plurality of metallic particles disposed on the carbon nanotube film structure. The carbon nanotube film structure includes a plurality of stacked carbon nanotube films.Type: ApplicationFiled: June 15, 2010Publication date: March 17, 2011Applicants: TSINGHUA UNIVERSITY, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: YING-HUI SUN, XIAO-FENG FENG, JIAO MIAO, XU XIE, KAI-LI JIANG, KAI LIU, SHOU-SHAN FAN
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Patent number: 7893348Abstract: In some embodiments, the present invention is directed to photovoltaic (PV) devices comprising silicon (Si) nanowires as active PV elements, wherein such devices are typically thin film Si solar cells. Generally, such solar cells are of the p-i-n type and can be fabricated for front and/or backside (i.e., top and/or bottom) illumination. Additionally, the present invention is also directed at methods of making and using such devices, and to systems and modules (e.g., solar panels) employing such devices.Type: GrantFiled: August 25, 2006Date of Patent: February 22, 2011Assignee: General Electric CompanyInventors: Bastiaan Arie Korevaar, Loucas Tsakalakos
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Publication number: 20110037976Abstract: Flexible SERS substrates, methods of making flexible SERS substrates, and methods of using flexible SERS substrates are disclosed.Type: ApplicationFiled: August 17, 2010Publication date: February 17, 2011Inventors: Yiping Zhao, HsiaoYun Chu
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Publication number: 20110036406Abstract: Disclosed is an organic photoelectric conversion element having high photoelectric conversion efficiency and high durability. Also disclosed are a solar cell and an optical sensor array, each using the organic photoelectric conversion element The organic photoelectric conversion element comprises a bulk heterojunction layer wherein an n-type semiconductor material and a p-type semiconductor material are mixed. The organic photoelectric conversion element is characterized in that the n-type semiconductor material is a polymer compound and the p-type semiconductor material is a low-molecular-weight compound.Type: ApplicationFiled: August 21, 2009Publication date: February 17, 2011Applicant: KONICA MINOLTA HOLDINGS, INC.Inventors: Yasushi Okubo, Takahiko Nojima, Hiroaki Itoh, Ayako Wachi
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Publication number: 20110031399Abstract: Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.Type: ApplicationFiled: October 22, 2010Publication date: February 10, 2011Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.Inventor: FRANKY SO
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Publication number: 20110032743Abstract: Colloidal-processed Si particle devices, device fabrication, and device uses have been presented. The generic device includes a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing. A colloidal-processed Si particle layer overlies the first electrode, the second electrode, and the spacing between the electrodes. The Si particle layer includes a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles.Type: ApplicationFiled: July 14, 2010Publication date: February 10, 2011Inventors: Jiandong Huang, Liang Tang, Changqing Zhan, Chang-Ching Tu
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Publication number: 20110031403Abstract: Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.Type: ApplicationFiled: October 22, 2010Publication date: February 10, 2011Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.Inventor: FRANKY SO
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Publication number: 20110031406Abstract: An X-ray detector for a tomography device is disclosed, including a plurality of detector elements, each including a photodiode and a scintillator fixed to the optically active surface of the photodiode by a connecting medium. In at least one embodiment, the optically active surface of the photodiode has a nanostructure, which forms a transition region having gradually progressing refractive indices between a refractive index of the connecting medium and a refractive index of the photodiode. Reflections at the optical transition of connecting medium/photodiode and also optical crosstalk to adjacent detector elements are greatly reduced in this way. Such an X-ray detector therefore has a higher luminous efficiency, with which a signal-to-noise ratio and a spatial resolution of the X-ray detector are improved. At least one embodiment of the invention additionally relates to a method for producing an X-ray detector having the properties mentioned.Type: ApplicationFiled: August 3, 2010Publication date: February 10, 2011Inventor: Stefan Wirth
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Publication number: 20110006204Abstract: A detector array and method for making the detector array. The detector array includes a substrate including a plurality of trenches formed therein, and a plurality of collectors electrically isolated from each other, formed on the walls of the trenches, and configured to collect charged particles incident on respective ones of the collectors and to output from the collectors signals indicative of charged particle collection. In the detector array, adjacent ones of the plurality of trenches are disposed in a staggered configuration relative to one another. The method forms in a substrate a plurality of trenches across a surface of the substrate such that adjacent ones of the trenches are in a staggered sequence relative to one another, forms in the plurality of trenches a plurality of collectors, and connects a plurality of electrodes respectively to the collectors.Type: ApplicationFiled: February 24, 2009Publication date: January 13, 2011Applicant: RESEARCH TRIANGLE INSTITUTEInventors: Christopher A. Bower, Kristin Hedgepath Gilchrist, Brian R. Stoner
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Publication number: 20110001124Abstract: Apparatuses capable of and techniques for detecting the visible light spectrum are provided.Type: ApplicationFiled: July 6, 2009Publication date: January 6, 2011Applicant: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATIONInventor: Doyeol AHN
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Publication number: 20110001125Abstract: Apparatuses capable of and techniques for detecting long wavelength radiation are provided.Type: ApplicationFiled: July 6, 2009Publication date: January 6, 2011Applicant: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATIONInventor: Doyeol AHN
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Publication number: 20100320391Abstract: A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.Type: ApplicationFiled: June 17, 2010Publication date: December 23, 2010Applicant: Regents of the University of MichiganInventor: Larry E. ANTONUK
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Publication number: 20100308214Abstract: An embodiment relates to image sensor comprising one or more nanowires on a substrate of a cavity, the nanowire being configured to transmit a first portion of an electromagnetic radiation beam incident on the sensor, and the substrate that absorbs a second portion of the electromagnetic radiation beam incident on the sensor, wherein the first portion is substantially different from the second portion. The substrate could have a anti-reflective material. The ratio of a diameter of the cavity to a diameter of the nanowire could be at less than about 10.Type: ApplicationFiled: June 4, 2009Publication date: December 9, 2010Applicant: ZENA TECHNOLOGIES, INC.Inventor: Munib Wober
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Publication number: 20100301216Abstract: A light detecting system is disclosed. The system comprises an arrangement of quantum dots forming an optically active region, a channel region and a charge carrier extractor between the active region and the channel region. The charge carrier extractor is characterized by a set of gradually decreasing energy levels between a characteristic excited energy level of the active region and a characteristic conductance energy level of the channel region.Type: ApplicationFiled: May 28, 2010Publication date: December 2, 2010Applicant: Technion Research & Development Foundation Ltd.Inventors: Alon VARDI, Gad Bahir
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Publication number: 20100302440Abstract: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.Type: ApplicationFiled: May 26, 2009Publication date: December 2, 2010Applicant: ZENA TECHNOLOGIES, INC.Inventor: Munib Wober
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Publication number: 20100294350Abstract: Provided are a photo-electrode for dye-sensitized solar cells, and back contact dye-sensitized solar cells comprising the same. The photo-electrode includes a porous membrane having metal oxide nano-particles adsorbed in a photosensitive dye directly contacting a transparent substrate without intermediation of a conductive film, so that the photo-electrode has advanced light transmittance without absorption and scattering of incident light by the conductive film and application possibilities to a thin film retaining a high-level of electrical conductivity, as well as an easy forming method for the conductive film.Type: ApplicationFiled: November 9, 2009Publication date: November 25, 2010Inventors: Min-Jae KO, Won-Mok Kim, Kyung-Kon Kim, Nam-Gyu Park, Boem-Jin Yoo, Yong-Hyun Kim
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Publication number: 20100296086Abstract: An integrated chemical separation device includes a single device body, a chemical separation unit configured to separate a chemical from a fluid, a Raman sensor substrate comprising one or more surfaces configured to be adsorbed by molecules of the chemical from the fluid, and a Raman scattering spectrometer unit that can emit a laser beam to illuminate the Raman sensor substrate and to detect the chemical from the light scattered from the Raman sensor substrate. The chemical separation unit, the Raman sensor substrate, and the Raman scattering spectrometer unit are held in or mounted to the single device body.Type: ApplicationFiled: August 2, 2010Publication date: November 25, 2010Inventors: Hong Wang, Xun Guo
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Publication number: 20100295635Abstract: A tunable terahertz resonator includes a semiconductor substrate and a metal layer contacting a surface of the semiconductor substrate. A depletion layer is formed in the semiconductor substrate near an interface between the metal layer and the semiconductor substrate. A chiral nanostructure is coupled to the substrate or the metal layer, the chiral nanostructure including a conducting or semiconducting material and having an inductance. A bias circuit applies a bias voltage across the metal layer and the semiconductor substrate to control a capacitance of a tunable capacitor that includes the depletion layer. The chiral nanostructure and the tunable capacitor form a tunable resonant circuit. The tunable terahertz resonator can be used in a terahertz radiation emitter or receiver.Type: ApplicationFiled: May 20, 2010Publication date: November 25, 2010Inventors: Eva Schubert, Mathias M. Schubert, Tino Hofmann
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Patent number: 7829054Abstract: In an actuator including at least one active electrode disposed in an electrolyte and comprising at least two webs of an electrically conductive material with a plurality of geometrically anisotropic nanoparticles disposed thereon and oriented uni-directionally in a preferential direction with an electrically conductive connection between the nanoparticles and the webs and a potential difference with respect to ground can be applied to the active electrode by a voltage or current source, the nanoparticles are connected in each case to two webs and the connections are material-interlocking.Type: GrantFiled: June 27, 2006Date of Patent: November 9, 2010Assignee: Forschungszentrum Karlsruhe GmbHInventors: Torsten Koker, Ulrich Gengenbach
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Publication number: 20100264333Abstract: The present invention relates to a gas sensing device comprising a nanoparticle layer (1) and a quantum dot layer (3) separated from each other by a gas absorption layer (2) which has a thickness which changes upon absorption of a gas. The nanoparticle layer (1) is provided for generating a surface plasmon resonance within a plasmon resonance frequency range upon illumination with light within a light frequency range; the quantum dot layer (3) has an absorption spectrum overlapping with said plasmon resonance frequency range of said nanoparticle layer (1) and shows photoluminescence in a photoluminescence emission frequency range upon absorption of energy within its absorption spectrum. The present invention further relates to a method for fabricating such a gas sensing device and to a method of using such a gas sensing device.Type: ApplicationFiled: December 17, 2008Publication date: October 21, 2010Applicant: STICHTING IMEC NEDERLANDInventors: Peter Offermans, Mercedes Crego Calama
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Publication number: 20100259752Abstract: Systems and methods for sensing an external measurand are disclosed. A sensor includes an optical fiber having at least one fiber Bragg grating (FBG) section and a plurality of carbon nanotubes (CNTs) surrounding at least a portion of the FBG section. Light is provided into the sensor while the CNTs are exposed to one or more measurands. A change in a spectrum of one of a transmitted portion and a reflected portion of the light is determined. A measurand that has caused the change is identified.Type: ApplicationFiled: April 12, 2010Publication date: October 14, 2010Applicant: LOCKHEED MARTIN CORPORATIONInventors: Tushar K. Shah, John J. Morber, Pierre Kabro, Sanjay Gupta
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Publication number: 20100258784Abstract: A cavity free, broadband approach for engineering photon emitter interactions via sub-wavelength confinement of optical fields near metallic nanostructures. When a single CdSe quantum dot (QD) is optically excited in close proximity to a silver nanowire (NW), emission from the QD couples directly to guided surface plasmons in the NW, causing the wire's ends to light up. Nonclassical photon correlations between the emission from the QD and the ends of the NW demonstrate that the latter stems from the generation of single, quantized plasmons. Results from a large number of devices show that the efficient coupling is accompanied by more than 2.5-fold enhancement of the QD spontaneous emission, in a good agreement with theoretical predictions.Type: ApplicationFiled: September 18, 2008Publication date: October 14, 2010Inventors: Mikhail D. Lukin, Alexander S. Zibrov, Alexey V. Akimov, Philip R. Hemmer, Hongkun Park, Aryesh Mukherjee, Darrick E. Chang, Chun Liang Yu
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Publication number: 20100245814Abstract: An analytical substrate for amplifying Raman signals by a factor greater than 10,000, or by a factor less than 1,000,000. The analytical substrate is fabricated by depositing a film on the substrate and heating the substrate to a temperature less than 100 degrees Celsius for a period of time less than 30 seconds. The film can comprise a metallic nanoparticle dispersion that can further comprise a population of metallic nanoparticles. In some instances, the metallic nanoparticles have an average cross-sectional dimension in a range of about 1 nm to about 100 nm. In other instances each nanoparticle comprises at least one ligand bound to a surface of the nanoparticle, where the ligand comprises a heteroatom head group bound to the nanoparticle surface and a tail bound to the heteroatom head group.Type: ApplicationFiled: February 26, 2010Publication date: September 30, 2010Inventors: Gregory Jablonski, Michael Mastropietro
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Publication number: 20100245817Abstract: The present invention relates to the microsphere whose surface is covered with hot spots and the method for identifying chemicals through Surface Enhanced Raman Scattering (SERS) using the same. The microsphere having hot spots, according to the present invention, includes a microsphere and metal networks as a shell which covers the surface of the microsphere, and nano-sized pores are distributed randomly on the surface or in the interstitial space of the metal networks. The microsphere having hot spots, according to the present invention, can be individually manipulated under a conventional optical microscope. SERS spectra of the monolayer of molecules on Pt or Au can be measured using single microsphere having hot spots mentioned as a sensitive probe. The microsphere having hot spots can be applied for decoding the microspheres with Raman tags flowing in a microfluidic system.Type: ApplicationFiled: March 30, 2010Publication date: September 30, 2010Inventors: Se Jin PARK, Taek Dong Chung, Lilin Piao, Han Kil Boo
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Publication number: 20100207012Abstract: A waveform detector may include multiple stages.Type: ApplicationFiled: March 31, 2010Publication date: August 19, 2010Applicant: Searete LLCInventors: Roderick A. Hyde, Muriel Y. Ishikawa, Edward K.Y. Jung, Nathan P. Myhrvold, Clarence T. Tegreene, Lowell L. Wood, JR.
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Publication number: 20100201664Abstract: Provided are a photosensor, a photosensor apparatus including the photosensor, and a display apparatus including the photosensor apparatus. The photosensor includes a substrate; a first light receiving layer which is formed on the substrate and comprises an oxide; a second light receiving layer which is connected to the first light receiving layer and comprises an organic material; and first and second electrodes which are respectively connected to the first and second light receiving layers.Type: ApplicationFiled: January 25, 2010Publication date: August 12, 2010Applicant: Samsung Mobile Display Co., Ltd.Inventors: Moon-Jae Lee, Won-Jun Song, Sun-Hee Lee, Young-Hee Lee, Mu-Hyun Kim, Hye-Dong Kim
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Publication number: 20100193695Abstract: Radiation dosimeters that are based on carbon materials such as carbon powder, carbon fibers, carbon nanoparticles and carbon nanotubes are developed. The dosimeter may contain a singular element or multiple sensing elements that are arrayed in 1-D, 2-D and 3-D formations. Each sensing element is made up of two electrodes with carbon materials deposited between the electrodes. The sensing elements may be deposited on flexible substrates to create flexible dosimeters. In addition, the carbon sensing materials may be deposited onto transparent substrates to achieve a transparent dosimeter. Transparent and/or flexible dosimeters can be fabricated with the carbon materials. The sensing elements are connected to external power sources. As the elements are exposed to radiation beams, the change in resistivity or conductance of the carbon materials is measured by current detection circuitry.Type: ApplicationFiled: November 14, 2008Publication date: August 5, 2010Inventors: John T.W. Yeow, Jiazhi Ma
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Publication number: 20100190661Abstract: A surface-enhanced Raman spectroscopy (SERS)—active structure for use in Raman scattering detection has an array of nanostructures formed on a substrate by deposition and chemical etching. The nanostructures are coated with metal nanoparticles.Type: ApplicationFiled: January 26, 2009Publication date: July 29, 2010Applicant: CITY UNIVERSITY OF HONG KONGInventors: Shuit-Tong Lee, Ning Bew Wong, Ming-Liang Zhang, Meng-Su Yang, Ming-Wang Shao
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Publication number: 20100187404Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: March 19, 2010Publication date: July 29, 2010Inventors: Ethan Jacob Dukenfield Klem, Dean Delehanty Macneil, Gerasimos Konstantatos, Jiang Tang, Michael Charles Brading, Hui Tian, Edward Hartley Sargent
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Publication number: 20100187408Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: March 19, 2010Publication date: July 29, 2010Inventors: Ethan Jacob Dukenfield Klem, Dean Delehanty Macneil, Gerasimos Konstantatos, Jiang Tang, Michael Charles Brading, Hui Tian, Edward Hartley Sargent
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Publication number: 20100181482Abstract: A transmission electron microscope (TEM) micro-grid includes a grid, a carbon nanotube film structure and two electrodes electrically connected to the carbon nanotube film structure.Type: ApplicationFiled: March 30, 2010Publication date: July 22, 2010Applicants: TSINGHUA UNIVERSITY, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: LI-NA ZHANG, CHEN FENG, KAI-LI JIANG, SHOU-SHAN FAN
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Publication number: 20100177306Abstract: A method of producing a surface enhanced Raman scattering spectrum which is useful for certain types of assays, in particular proximity assays. The method includes providing two SERS-active nanoparticles. The first SERS-active nanoparticle will absorb a photon at a first wavelength and emit a Raman-shifted photon at a second wavelength. The second SERS-active nanoparticle will absorb a photon at the second wavelength and emit a Raman-shifted photon at a third wavelength. Accordingly, when the first and second SERS-active nanoparticles are proximate to one another and the first SERS-active nanoparticle is illuminated at the first wavelength a Raman-shifted photon at the second wavelength may be emitted. This photon can be absorbed by the second SERS-active nanoparticle causing detectable emission of a second Raman-shifted photon at the third wavelength. Various assays may be designed based upon the above.Type: ApplicationFiled: April 18, 2008Publication date: July 15, 2010Inventor: Michael J. Natan
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Publication number: 20100171025Abstract: A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different.Type: ApplicationFiled: October 6, 2009Publication date: July 8, 2010Applicant: IMECInventors: Anne S. Verhulst, Wilfried Vandervorst
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Publication number: 20100171092Abstract: A new single optical interband transition occurs at the corresponding p-doping state of the carbon nanotubes in the VIS-NIR region when the degree of p-doping of carbon nanotubes is increased beyond a certain degree. P-doped carbon nanotubes to exhibit the new single optical interband transition in the VIS-NIR region may be used for devices so as to improve sensitivity and selectivity of the devices.Type: ApplicationFiled: February 12, 2009Publication date: July 8, 2010Applicant: Samsung Electronics Co., Ltd.Inventors: Seonmi YOON, Jaeyoung CHOI, Hyeon Jin SHIN, Young Hee LEE, Ki Kang KIM
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Patent number: 7750285Abstract: An optical sensor is characterized by comprising a photoconductive material (1) which generates a carrier (4) inside when irradiated with a light or an electromagnetic wave (3), and carbon nanotube (2), and by sensing the carrier (4), which is generated within the photoconductive material (1) by irradiation of the light or electromagnetic wave (3), through change of electrical conduction of the carbon nanotube (2).Type: GrantFiled: July 15, 2004Date of Patent: July 6, 2010Assignees: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and TechnologyInventors: Yasushi Nagamune, Kazuhiko Matsumoto
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Publication number: 20100155620Abstract: Silicon grids with electron-transparent SiO2 windows for use as substrates for high-resolution transmission electron microscopy of chemically-modified SiO2 surfaces are fabricated by forming an oxide layer on a silicon substrate. An aperture is defined in the silicon substrate by etching the substrate to the oxide layer. A single substrate can include a plurality of apertures that are in respective frame regions that are defined by one or more channels in the substrate. Structural or chemical functionalizations can be provided, and surface interactions observed via TEM.Type: ApplicationFiled: May 19, 2008Publication date: June 24, 2010Inventors: James E. Hutchison, Gregory J. Kearns
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Patent number: 7741664Abstract: Provided are a CMOS image sensor and a method for fabricating the same. A nanopillar is plurally formed at an upper end of a light receiving element.Type: GrantFiled: December 6, 2006Date of Patent: June 22, 2010Assignee: Korea Advanced Institute of Science & TechnologyInventors: Yang-Kyu Choi, Kuk-Hwan Kim