Abstract: A freeway routing system that connects interface groups in said field programmable gate array. The freeway system has a first set of routing conductors configured to transfer signals to the input ports of at least one interface group in a first tile of the field programmable gate array and configured to transfer signals from the output ports of other tiles in the field programmable gate array. The first set of conductors include vertical conductors that form intersections horizontal conductors and programmable interconnect elements located at the intersections of the vertical conductors and horizontal conductors in a diagonal orientation to connect each of horizontal conductors to one of the vertical conductors.

Abstract: An inter-tile buffering system for a field programmable gate array (FPGA) comprising a plurality of FPGA tiles arranged in rows and columns. Each file comprises a plurality of functional and interface groups and a primary routing structure, which is coupled to the functional and interface groups and is configured to receive and route primary output signals within at least one FPGA tile, and provide primary input signals to the functional and interface groups. Each functional group is configured to receive input signals, perform logic operations, and generate output signals and is configured to transfer signals from the routing structure to outside of at least one FPGA file, and includes a plurality of input multiplexers configured to select signals received from outside at least one FPGA tile and provide signals to the routing structure inside at least one FPGA tile.

Abstract: A vertical-color-filter detector disposed in a semiconductor structure comprises a complete-charge-transfer detector comprising semiconductor material doped to a first conductivity type and has a horizontal portion disposed at a first depth in the semiconductor structure substantially below an upper surface thereof and a vertical portion communicating with the upper surface of the semiconductor structure. The complete-charge-transfer detector is disposed within a first charge container forming a potential well around it. The horizontal portion of the complete-charge-transfer detector has a substantially uniform doping density in a substantially horizontal direction and the vertical portion of the complete-charge-transfer detector has a doping density that is a monotonic function of depth and is devoid of potential wells. A first charge-transfer device is disposed substantially at an upper surface of the semiconductor structure and is coupled to the vertical portion of the complete-charge-transfer detector.

Abstract: An integrated circuit includes a plurality of inputs, a plurality of output pads, a programmable logic block, an analog circuit block, an analog-to-digital converter programmably coupleable to individual analog circuits in the analog circuit block, and an interconnect architecture programmably coupling selected ones of the plurality of inputs, the plurality of outputs, the programmable logic block, the analog circuit block, and the analog-to-digital converter. At least one of the inputs may be programmably configured as one of a digital input programmably coupleable to elements in the programmable logic block or as an analog input to an analog circuit in the analog circuit block.

Abstract: An apparatus and a method are provided to allow a portion of a captured image to be evaluated with a digital camera. A display device of the digital camera can display the captured image. A specific area of interest of the captured image can be defined on the display device by zooming and panning or by defining a window over the captured image, and a histogram derived from only that area of interest can be displayed. The histogram can represent different types of information about the pixels of the captured image within the area of interest such as the levels of individual colors and luminance.

Abstract: A non-volatile-memory-transistor based lookup table for an FPGA includes a n:1 multiplexer. A non-volatile memory transistor is coupled to each of the n inputs of the multiplexer. The multiplexer has x address inputs wherein 2x=n as is known in the art. The output of the multiplexer is coupled to VCC through a pullup transistor. The gate of the pullup transistor is coupled to the output of an address transition detector circuit that has inputs coupled to the address inputs of the multiplexer. A sense amplifier is coupled to the output of the multiplexer.

Abstract: Methods and apparatus are disclosed for updating personal financial information on a web site. Preferred methods include a web site configured for receiving a request from a user to update personal financial information on the web site, verifying the user's identity, and allowing financial information to be updated if the user's response contains a proper password.

Abstract: The patent is for certain developments in hanger technology. Particularly attachments to provide broader shoulder supports for wood wire and plastic hangers and combinations thereof.

Abstract: The present invention comprises a device and a method for a deglitching circuit for a radiation tolerant static random access memory (SRAM) based field programmable gate array. The deglitching circuit for a radiation tolerant static random access memory (SRAM) based field programmable gate array comprises a configuration memory that has a plurality of configuration bits Read and write circuitry is provided to configure the plurality of configuration bits. A radiation hard latch is coupled to and controls a programmable element and an interface couples at least one of the plurality of configuration bits to the radiation hard latch when the write circuitry writes to the plurality of configuration bits.

Abstract: A routing architecture in a field programmable gate array (FPGA) having a plurality of logic clusters wherein each logic cluster has at least two sub-clusters. The logic clusters are arranged in rows and columns and each logic clusters has a plurality of receiver components, a plurality of transmitter components, at least one buffer module, at least one sequential logic component and at least one combinatorial logic component. A first-level routing architecture is programmably coupled to the logic clusters and a second-level routing architecture is programmably coupled to the logic clusters and to the first-level routing architecture through at least one of the transmitter components and at least one of the receiver components.

Abstract: A field-programmable gate array (FPGA) having an array of RAM memory cells comprising at least one row of RAM memory cells, each RAM cell of the at least one row of RAM memory cells coupled to a row driver line; a row decoder coupled to a first end of the row driver line of each at least one row of RAM memory cells. A monitoring memory cell is coupled to a row driver line. Each monitoring memory cell is also coupled to a memory writing line. An FPGA also has RAM memory cells that act as the programming mechanism. The FPGA further has erase circuitry for clearing the RAM memory cells for reprogramming of the FPGA. The FPGA is erased by providing at least one monitoring memory cell coupled to the erase circuitry. A memory clear phase is initiated on at least one monitoring memory cell. The monitoring memory cell then indicts the cell has been cleared.

Abstract: A method for detecting an error in data stored in configuration SRAM and user assignable SRAM in a FPGA comprises providing serial data stream into the FPGA from an external source, loading data from the serial data stream into the configuration SRAM in response to address signals generated by row column counters, loading data from the serial data stream into the user assignable SRAM in response to address signals generated by row and column counters, loading a seed and signature from the serial data stream into a cyclic redundancy checking circuit, cycling data out of configuration SRAM and user assignable SRAM by the row and column counters, performing error checking on the data that has been cycled out of the configuration SRAM and out of the user assignable SRAM by the cyclic redundancy checking circuit, and generating an error signal when an error is detected by the error checking circuit.

Abstract: A circuit for selectively interconnecting two nodes in an integrated circuit device includes a memory array having a plurality of wordlines and a plurality of bitlines. A refresh transistor has a source coupled to one of the plurality of bitlines, a control gate coupled to a dynamic random access memory wordline and a drain. A switching transistor has a gate coupled to the drain of the refresh transistor, a source coupled to a first one of the nodes and a drain coupled to a second one of the nodes. An address decoder for supplies periodic signals to the wordlines and the dynamic random access memory wordline.

Abstract: A low voltage signaling differential signaling driver comprising a first output line coupled to a delay circuit, a first multiplexer and a first output buffer. The first output line is also coupled to an inverter, a second multiplexer and a second output buffer.

Abstract: A system for monitoring movement of a person. The system includes a mobile transmitter that is affixed to the person to be monitored. The transmitter transmits radio signals to a receiver that may be used to track the person. The receiver may include an indicator that shows when the receiver is proximate the person. The indicator changes intensity as the distance between the transmitter and receiver changes.

Abstract: A charge pump is configured to receive an external voltage level and generate a high voltage level, wherein the high voltage level is higher than the external voltage level. A memory control circuit is configured to receive the external voltage level and the high voltage level, and to select one of the voltage levels. A memory array, with a word line and a bit line, is configured to receive the external and high voltage levels at the word line and the high voltage levels at the bit line. A word line driver is configured to provide the external and high voltage levels to the word line. A bit line selector is configured to select the bit line and receive the high, external, and regulated voltage levels. A bit line driver is configured to provide the external voltage levels to the bit line selector.

Abstract: A floating-gate transistor for an integrated circuit is formed on a p-type substrate. An n-type region is disposed over the p-type substrate. A p-type region is disposed over the n-type region. Spaced apart n-type source and drain regions are disposed in the p-type region forming a channel therein. A floating gate is disposed above and insulated from the channel. A control gate is disposed above and insulated from the floating gate. An isolation trench disposed in the p-type region and surrounding the source and drain regions, the isolation trench extending down into the n-type region. The substrate, the n-type region and the p-type region each biased such that the p-type region is fully depleted.

Abstract: A power-up and power-down circuit for an integrated circuit includes a voltage regulator set for a first voltage. A first I/O pad is coupled internally to an input to the voltage regulator and to first internal circuits. The second voltage is externally coupled to the first I/O pad. A second I/O pad is coupled internally to an output of the voltage regulator configured to drive the base of an external transistor. A third I/O pad of the integrated circuit is coupled internally to a reference-voltage input of the voltage regulator. A fourth I/O pad is coupled to a feedback input of the voltage regulator. A fifth I/O pad of the integrated circuit is coupled internally to logic circuitry that controls power-up and power down of the integrated circuit from internal signals including internal signals from a real-time clock circuit disposed on the integrated circuit.

Abstract: The invention relates to a semiconductor structure for use in the near infrared region, preferably in the range from 1.3 to 1.6 ?m, said structure comprising an active zone consisting of a plurality of epitaxially grown alternating layers of Si and Ge, a base layer of a first conductivity type disposed on one side of said active zone, and a cladding layer of the opposite conductivity type to the base layer, the cladding layer being provided on the opposite side of said active zone from said base layer, wherein the alternating Si and Ge layers of said active zone form a superlattice so that holes are located in quantized energy levels associated with a valance band and electrons are localized in a miniband associated with the conduction band and resulting from the superlattice structure. The invention is also directed to a method of manufacturing aforementioned structure.

Abstract: A method and apparatus for reducing flooding in a bridged network. The invention generally allows broadcast flooding for a predefined limited time period to permit mapping of a MAC address to a port by the bridge and disallows broadcast flooding for a second predefined time period. After the second time period expires, the process is repeated to allow the bridge to flood the networks for the predefined limited time period again. The bridge allows or disallows broadcasts flooding independently based on the destination MAC address.