Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of ?15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract: The object of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which suppresses decomposition of hydrogen peroxide, has a long liquid service life, and has less need for controlling the concentration of hydrogen peroxide in the etching agent, even in the cases where the etching agent is used for a semiconductor substrate having the titanium-based metal and a metallic copper or a metal alloy; an etching method; and an etching agent preparation liquid for use by mixing with hydrogen peroxide.

Abstract: Provided is a polishing composition which exhibits favorable storage stability and polishes a polishing object poor in chemical reactivity at a high speed. The invention is a polishing composition which contains silica having an organic acid immobilized on a surface thereof, a dihydric alcohol having a molecular weight of less than 20,000 and a pH adjusting agent, the polishing composition having a pH of 6 or less.

Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions having a pH ranging from 2.5 to 5.3 and comprising a mixture of spherical colloidal silica particles and from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition, of elongated, bent or nodular silica particles wherein the colloidal and elongated, bent or nodular silica particles differ from each other in weight average particle size (CPS) less than 20 nm, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms. The present invention further provides methods of using the compositions in high downforce CMP polishing applications.

Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Abstract: Technique to provide an abrasive regeneration method which, from a used abrasive slurry, can recover an abrasive by an efficient method and can thereafter obtain a high-purity regenerated abrasive by a simple method. This abrasive regeneration method uses an abrasive comprising at least one type of abrasive selected from diamond, boron nitride, silicon carbide, alumina, alumina zirconia and zirconium oxide. The abrasive regeneration involves a slurry recovery step (A) for recovering an abrasive slurry discharged from a polishing machine, a separation and concentration step (B) for adding an alkaline earth metal salt as an inorganic salt to the recovered abrasive slurry to aggregate the abrasive, and separating and concentrating the abrasive from a mother liquor, and an abrasive recovery step (C) for recovering the separated and concentrated abrasive.

Abstract: An optionally VOC-free silicone containing furniture polish is prepared using one or both of 1) a low viscosity silicone fluid and 2) a polydiorganosiloxane; and 3) a phosphonic acid dispersant together with water and one or more suitable surfactants.

Abstract: A rough surface of a starting synthetic quartz glass substrate is polished to a mirror finish, using a polishing slurry containing tetragonal or cubic zirconia.

Abstract: Provided herein are polishing compositions for removal of Co, for example, selectively over Cu, and methods of their use. A polishing composition comprising an abrasive and one or more Co complexors, where the polishing composition has a pH of 9 or more, and the Co complexor comprises one or more of functional groups selected from phosphonic acid (—P(?O)(OH)2) group or carboxyl (—C(?O)OH) group.

Abstract: A wafer polishing process includes polishing a central area on the back side of a wafer, polishing a peripheral area on the back side of the wafer, buffing the central area, and buffing the peripheral area. The process can significantly reduce scratch-related wafer breakage, can correct focus spots on wafers, and can replace cleaning processes that use chemical etchants. Polishing and buffing can include polishing and buffing the bevel region. Further improvements include polishing with abrasive pads having a soft backing, polishing or buffing with pads having relatively soft abrasive particles, polishing or buffing with abrasive pads made from abrasive particles that have been sorted and selected for regularity of shape, irrigating the surface being polished or buffed with an aqueous solution that includes a friction-reducing agent, and buffing with abrasive pads having 20k or finer grit or non-abrasive pads.

Abstract: Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.

Abstract: A polishing composition of the present invention contains a water-soluble polymer and abrasive grains. The water-soluble polymer is an anionic compound having an acid dissociation constant pKa of 3 or less. Specific examples of such a compound include polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyethyl acrylate sulfonic acid, polybutyl acrylate sulfonic acid, poly(2-acrylamide-2-methylpropanesulfonic acid), and polyisoprenesulfonic acid. The abrasive grains exhibit a negative zeta potential at a pH of 3.5 or less. Specific examples of such abrasive grains include colloidal silica.

Abstract: A sprayable depilatory composition including a depilatory agent; a surfactant present in the range 0.1% to 5.0% by weight of the composition, wherein the composition has an initial viscosity substantially less than about 7.00 Pas.

Abstract: The silver surface treatment agent of the present invention contains a layered silicate compound. The light-emitting device of the present invention comprises a substrate having a silver-plated layer; a light-emitting diode mounted on the substrate; and a film, provided on a surface of the silver-plated layer, containing a layered silicate compound.

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.

Abstract: Embodiments of the disclosure provide a filter structure. A second porous film having a plurality of second holes is disposed on a first porous film having a plurality of first holes. The second holes are smaller than the first holes. The filter structure is dried by an easy and power-saving method such as compression.

Abstract: An advanced reflexive structure system is disclosed. The reflexive system mimics the pain withdrawal reflex on which the human body relies. The reflexive system incorporates a continuous health and performance monitoring system via an embedded dielectric film, an adaptive composite structure based on shape memory composite material, and an intelligence system which will be interfaced with both the health/performance sensors and the adaptive structure. When activated shape memory polymer will recover its structural integrity via shape recovery and a reptation healing process. These features enable the use of SMP as an adaptive structure in the proposed reflexive system. The development of a reflexive system for structures will enable increased safety and security and demonstrate a better understanding of integrated performance systems.

Abstract: The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

Abstract: The present invention is the aqueous floor polishing composition which contains the polyoxyalkylene diester compound represented by the following general formula (1) and does not contain the phosphorus-containing plasticizer. R1 and R2 represent each independently alkyl groups having 1 to 24 carbon atoms, m represents an integer from 2 to 4, n represents a number from 2 to 40. The aqueous floor polishing composition of the present invention does not contain the phosphorus-containing plasticizer. Therefore, it does not affect the environment negatively, in spite of having excellent leveling properties, lustering properties and heel mark resistance properties.

Abstract: A polishing composition for a magnetic disk substrate of the present invention includes water, silica particles, and at least one or more selected from an acid, a salt of the acid, and an oxidizing agent. The silica particles are observed with a transmission electron microscope to measure a maximum diameter and a projected area of each particle, and a value obtained by dividing the area of a circle whose diameter is the maximum diameter of a silica particle by the projected area of the silica particle and multiplying the result by 100, is in the range of 100 to 130.

Abstract: The invention provides a polishing composition containing a pyrrolidone polymer, an aminophosphonic acid, a tetraalkylammonium salt, and water, wherein the composition has a pH of about 7 to about 11.7. The invention further provides a method of using such a polishing composition to polish a substrate, especially a substrate containing silicon.

Abstract: The present invention relates to nanoparticulate UV protectants which are obtainable by hydrothermal treatment of a nanoparticulate metal oxide and subsequent application of a silicon dioxide coating, and to the preparation and use thereof. The present invention furthermore relates to novel compositions, in particular for topical application, which are intended, in particular, for light protection of the skin and/or of the hair against UV radiation, and to the use thereof in the above-mentioned cosmetic application.

Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.

Abstract: Compositions comprising a fluorosurtactant and a fluoro-free hydrotrope are disclosed. The fluoro-free hydrotropes are cationic aromatic compounds, anionic aromatic compounds, or water soluble azo derivatives.

Abstract: The inventive chemical-mechanical polishing composition comprises a liquid carrier, hydrogen peroxide, benzotriazole, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing composition.

Abstract: A fluorine-containing compound exhibiting excellent surface tension-reducing ability despite the absence of perfluoroalkyl group having a chain length of 8 or more which had been the cause of the PFOS and PFOA problems and use of a fluorine material with low environmental load is provided. Also provided are a fluorine-containing surfactant and a composition thereof, an aqueous resin emulsion and a floor polish composition containing such surfactant. The fluorine-containing compound is represented by the following formula (1): Rf1—CpH2p—CH(OH)—CqH2q—NR—CrH2r—(O)n—SO3M (1) wherein Rf1 is a C1-6 perfluoroalkyl group, p, q, and r are independently an integer of 1 to 6, M is a cationic atom or atomic group, n is 0 or 1, R is hydrogen atom, a C1-12 alkyl group, or a group represented by the following formula (2): Rf2—CsH2s—CH(OH)—CtH2t—??(2) wherein Rf2 is a C1-6 perfluoroalkyl group, and s and t are independently an integer of 1 to 6.

Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Abstract: A slurry for use in a chemical mechanical planarization process for a wafer comprises a chemical portion and a mechanical portion. The chemical portion comprises a surfactant that forms a layer over a metallic layer of the wafer to decreasing dishing to less than an average of 843 ? reduce the static etch rate of the metallic layer. The mechanical portion comprises an abrasive agent to assist in the planarization of the metallic layer of the wafer. In another embodiment, a slurry for polishing a copper layer formed over a first layer is disclosed. The slurry comprises an abrasive agent; and a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer. The shelf life of the slurry exceeds 90 days.

Abstract: The invention provides an aqueous floor coating composition, comprising water, at least one polymer film forming agent, and a plasticizing agent, wherein at least a portion of the plasticizing agent is a synergistic combination of tributoxyethyl phosphate and a benzoate ester blend. Such compositions have reduced phosphorus content, yet retain the leveling and gloss of tributoxyethyl phosphate plasticizers and also exhibit improved soil resistance.

Abstract: This invention is directed to a composition capable of imparting surface effects to a liquid by contacting the liquid with a partially fluorinated phosphate with an ammonium cation (NH2R1R2)+ wherein R1 and R2 are independently linear or branched organic groups containing at least one carboxylate moiety and one amino moiety, and optionally be substituted, interrupted, or both with oxygen, sulfur, or nitrogen-containing moieties, or with cyclic alkyl or aryl moieties containing up to 10 carbon atoms.

Abstract: An optionally VOC-free silicone containing furniture polish is prepared using one or both of 1) a low viscosity silicone fluid and 2) a polydiorganosiloxane; and 3) a phosphonic acid dispersant together with water and one or more suitable surfactants.

Abstract: The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Abstract: The invention is directed to a composition for simultaneously washing and waxing an automotive exterior surface. More particularly, this invention relates to a wash and wax composition that imparts a detergent-resistant wax to the vehicle surface. The composition comprises water, nano-scale particles of a wax, a surfactant, n-octyltriethoxysilane, diethoxyoctylsilyl trimethylsilyl ester of silicic acid, and an amino-functional siloxane or tetra(trimethylsiloxy) silane, wherein the wax particles, n-octyltriethoxysilane, diethoxyoctylsilyl trimethylsilyl ester of silicic acid, and amino-functional siloxane or tetra(trimethylsiloxy) silane form an emulsion or dispersion in the water.

Abstract: Disclosed is a method of altering the surface behavior of a liquid by adding to the liquid a compound of a Formula (1): Rf—O—(CF2)x(CH2)y—O-(QO)z—H ??(1) Wherein Rf is a linear or branched perfluoroalkyl having 1 to 6 carbon atoms, optionally interrupted by one to three ether oxygen atoms, x is an integer of 1 to 6; y is an integer of 1 to 6; Q is a linear 1,2-alkylene group of the formula CmH2m where m is an integer of 2 to 10; and z is an integer of 1 to 30.

Abstract: Disclosed is the use of benzotropolone derivatives of formula (1), wherein R1, R2 and R7 independently from each other are hydrogen; C1-C3alkyl; or COR8; R3 is hydrogen; or COOR9 R4 is hydrogen; or C1-C3alkyl; R5 is hydrogen; hydroxy; C1-C3-alkoxy; or -0-(CO)—R10; R6 is hydrogen; C1-C3alkyl; or COR8; or R5 and R6 together may form a five or six membered ring; or R6 and R7 together form a five or six membered ring; and R8, R9, R10 independently of each other are C1-C30alkyl; for protecting body-care and household products from photolytic and oxidative degradation.

Abstract: A buffing composition includes an emulsion having an aqueous liquid phase and an oily liquid phase; a solubilized zirconium carboxylate; and fine abrasive particles having a Mohs hardness of at least 4. The fine abrasive particles have a particle size distribution having at least one mode with a particle size of at least 5 micrometers. A method of finishing a surface of a material using the buffing composition is also disclosed.

Abstract: The invention is a method and composition for polishing a wet surface. The invention is a water based composition for polishing wet surfaces and a method of applying the water based composition to polish wet surfaces. The method does not include a dry to haze or buffing step in order to achieve a lasting high gloss shine on the polished surface.

Abstract: A fluorine-containing compound exhibiting excellent surface tension-reducing ability despite the absence of perfluoroalkyl group having a chain length of 8 or more which had been the cause of the PFOS and PFOA problems and use of a fluorine material with low environmental load is provided. Also provided are a fluorine-containing surfactant and a composition thereof, an aqueous resin emulsion and a floor polish composition containing such surfactant. The fluorine-containing compound is represented by the following formula (1): Rf1—CpH2p—CH(OH)—CqH2q—NR—CrH2r—(O)n—SO3M??(1) wherein Rf1 is a C1-6 perfluoroalkyl group, p, q, and r are independently an integer of 1 to 6, M is a cationic atom or atomic group, n is 0 or 1, R is hydrogen atom, a C1-12 alkyl group, or a group represented by the following formula (2): Rf2—CsH2s—CH(OH)—CtH2t—??(2) wherein Rf2 is a C1-6 perfluoroalkyl group, and s and t are independently an integer of 1 to 6.

Abstract: A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.

Abstract: A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic monomer units (preferably 100 mol % non-ionic monomer units), has a number average molecular weight (Mn) of at least about 5 kDa, and is present in the composition at a concentration sufficient to provide a Brookfield viscosity for the composition in the range of about 50 to about 1000 cP, e.g., 50 to about 700 cP, at about 25° C. at a spindle rotation rate of about 60 rpm. In one embodiment, the viscosity modifier comprises a polymer having a weight average molecular weight (Mw) of at least about 200 kDa. When a viscosity modifier of 200 kDa or greater Mw is utilized, a preferred wiresaw cutting method the cutting fluid is circulated and applied by pumps and nozzles operating at a relatively low shear rate of not more than about 104 s?1.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains having a pore volume of 0.14 ml/g or more, and (B) a dispersion medium.

Abstract: Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process.

Abstract: Provided herein are cyclosiloxane-substituted polysiloxane compounds, compositions that include the polysiloxane compounds, and methods for preparation and use of the polysiloxane compounds. Provided are mechanical lubricant compositions, hydraulic fluid compositions, anti-foam compositions, water repellant agent compositions, release agent compositions, personal care compositions, cosmetic compositions, household care compositions and drug delivery compositions that include one or more of the cyclosiloxane-substituted polysiloxane compounds provided herein.

Abstract: The present invention comprises fluorinated ethoxylated polyurethanes of formula [Rf—(X)n—(CH2CHR1—O)m—CH2CH2—O—C(O)—NH]p-A, wherein Rf is a C1 to C6 perfluoroalkyl; X is a divalent radical; n is 0 or 1; R1 is H or C1 to C4 alkyl; m is 1 to 20; p is a positive integer of at least 2; and A is the residue of a polyisocyanate, and methods for altering surface behavior of liquids using such compounds.

Abstract: The invention provides an anti-corrosive package which can be added to release agents used in preparing textiles and molded articles from lignocellulosic materials, concrete and polyurethane foam.

Abstract: The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing.

Abstract: To provide a polishing composition particularly useful for an application to polish a conductor layer made of copper in a semiconductor wiring process, and a polishing process employing it. A polishing composition comprising an anionic surfactant and a nonionic surfactant, characterized in that the composition is prepared so that the water contact angle of the surface of an object to be polished, after being polished by the composition, would be at most 60°.

Abstract: An ultrasonic mixing system having a treatment chamber in which at least two separate phases can be mixed to prepare an emulsion is disclosed. Specifically, at least one phase is a dispersed phase and one phase in a continuous phase. The treatment chamber has an elongate housing through which the phases flow longitudinally from a first inlet port and a second inlet port, respectively, to an outlet port thereof. An elongate ultrasonic waveguide assembly extends within the housing and is operable at a predetermined ultrasonic frequency to ultrasonically energize the phases within the housing. An elongate ultrasonic horn of the waveguide assembly is disposed at least in part intermediate the inlet and outlet ports, and has a plurality of discrete agitating members in contact with and extending transversely outward from the horn intermediate the inlet and outlet ports in longitudinally spaced relationship with each other.