Abstract: An asymmetric organomodified disiloxane surfactant having the formula: MM? wherein M comprises branched hydrocarbon substituents and M? comprises a cationic, anionic or zwitterionic substituent and a polyether substituent that may be combined as one moiety, wherein the disiloxane surfactant has an enhanced resistance to hydrolysis between a pH of about 3 to about 12.

Abstract: A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises about 0.1 to about 10 percent by weight of a zirconia or fumed alumina abrasive, about 0.1 to about 10 percent by weight of an alkali metal iodate salt and an aqueous carrier. The composition has a pH of at least about 10. The composition is utilized to polish a surface of a tantalum-containing substrate.

Abstract: The polishing composition contains polyoxyethylene sorbitan mono-fatty acid ester, silicon dioxide, water soluble cellulose, an alkaline compound, and water. The content of polyoxyethylene sorbitan mono-fatty acid ester in the polishing composition is less than 0.0025% by mass. The polishing composition is appropriate for final polishing of silicon wafers.

Abstract: An aqueous gel wax formulation includes a cationic wax microemulsion and an anionically charged polishing agent having a particle size less than about 200 nanometers and optimally a quaternary ammonium substituted silicone and an amino functional silicone. The components combine to form a gel wax formulation which can be applied without buffing.

Abstract: A composition that rapidly passivates copper-containing surface to yield a uniform layer of insoluble copper oxide, the composition being useful in chemical-mechanical planarization of copper-containing surfaces is disclosed. The composition is a solution having a pH of equal to or greater than 9 and having an oxidation potential sufficient to oxidize the surface to form non-soluble copper oxides. Also disclosed are methods of making and using the composition.

Abstract: Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

Abstract: The proposed slurry can be used to planarize polymeric candidate ILD materials such Benzocylobutene (BCB), SILK, Polyimide, etc. The slurry consists of colloidal suspension of nanoparticle abrasives made up of Tetraethylorthosilicate (TEOS)-derived silica and Zirconium-dioxide (ZrO2), its derivatives and any materials modified from ZrO2 and/or TEOS, in a chemically active medium. The base solution of the slurry consists of deionized (Dl) water, buffering agents like inorganic buffer comprised of inorganic acids such as TRIS-Hcl, its derivatives and variants, cleansing agents, surface modified catalysts, and surface reagents. The organic solvents like isopropyl alcohol, methanol, and other organic alcohols ranging from 0.0005 to 0.05% are employed for active dissolution of the chemical surface complex formed as a result of the slurry chemical action. The inorganic buffer is so chosen that the complex salts resulting from the reaction impart hydrophobicity to the polished thin film surface.

Abstract: A polishing slurry for polishing an aluminum film used for LSI or the like and a method for polishing an aluminum film using the same are provided. A polishing slurry for polishing an aluminum film comprising a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, and a polishing method for polishing an aluminum film using the polishing slurry.

Abstract: A composition for sealing exposed wood before finishing the wood, which composition includes polymer solids and an acid neutralizing agent. The acid neutralizing agent may be a weak base and/or a buffering agent. The polymer solids may include acrylate monomers, urethane monomers, and the like. Also disclosed is a method of sealing and neutralizing a wood surface before finishing the wood surface by applying the composition to the exposed wood surface.

Abstract: A composition for sealing exposed wood before finishing the wood, which composition includes polymer solids and an acid neutralizing agent. The acid neutralizing agent may be a weak base and/or a buffering agent. The polymer solids may include acrylate monomers, urethane monomers, and the like. Also disclosed is a method of sealing and neutralizing a wood surface before finishing the wood surface by applying the composition to the exposed wood surface.

Abstract: Embodiments of the present invention provide polymer matrix nanocomposites reinforced with nano-scale materials such as nanoparticles and carbon nanotubes and methods of fabricating. The nanomaterials are provided within relatively low weight fractions, for example in the range of approximately 0.01 to about 0.4% by weight and distributed within the matrix by a magnetic mixing procedure to provide substantially uniform reinforcement of the nanocomposites. Advantageously, these nanocomposites provide significantly enhanced tensile strength, strain to failure, and fracture toughness over corresponding neat matrices.

Abstract: This invention provides film-forming compositions, including but not limited to polishes, coatings, adhesives and inks, comprising a at least one acrylic or vinyl acetate polymer or copolymer as a film-forming ingredient and, as the plasticizer, a blend in specified proportions of a) the benzoate of a 6-carbon monohydric alcohol, b) diethylene glycol dibenzoate and c) diethylene glycol monobenzoate.

Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Abstract: Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and impurities that are attached around these diamond particles. The density of non-diamond carbon contained in the impurities is in the range of 95% or more and 99% or less, and the density of chlorine contained in other than non-diamond carbon in the impurities is 0.5% or more and preferably 3.5% or less. The diameters of these diamond clusters are in the range of 30 nm or more and 500 nm or less, and their average diameter is in the range of 30 nm or more and 200 nm or less. Such polishing material is produced first by an explosion shock method to obtain diamond clusters and then removing the impurities such that density of non-diamond carbon contained in the impurities and density of chlorine contained in other than non-diamond carbon in the impurities become adjusted.

Abstract: A heterocyclic benzene compound such as benzotriazole, is dissolved in at least one substance selected from the group consisting of a primary alcohol having from 1 to 4 carbon atoms, a glycol having from 2 to 4 carbon atoms, an ether represented by the Formula 2 (wherein m is an integer of from 1 to 4), N-methyl-2-pyrrolidone, N,N-dimethylformamide, dimethyl sulfoxide, ?-butyrolactone and propylene carbonate, and an aqueous dispersion of fine oxide particles which constitute abrasive grains is mixed therewith, whereby a polishing compound is obtained. By use of this polishing compound in polishing a substrate provided with an insulating film 2 on which a wiring metal film 4 and a barrier film 3 are formed, the formation of an embedded wiring 5 is made possible with low dishing, low erosion and low scratching at a high removal rate.

Abstract: A coating formulation containing at least one surface-modified silicon dioxide having a 60° reflectometer value of <3 and a black number My of at least 140 has excellent performance properties, for example, a very good transparency.

Abstract: A floor-polish leveling agent containing an ester compound obtained by reacting a hydroxycarboxylic acid with at least one glycol ether so that substantially all of the carboxyl groups are esterified. The ester compound may be an acetylated ester compound in which one or more hydroxyl groups are acetylated. An aqueous floor-polish composition containing this ester compound and/or acetylated ester compound, and a water-insoluble polymer.

Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, an oxidizing agent, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing system.

Abstract: A surfactant of formula 1 (Rf-A)a-Q-([B]k—R)b??Formula 1 wherein a and b are each independently 1 or 2; Rf is a linear or branched perfluoroalkyl radical having from 2 to about 20 carbon atoms, optionally interrupted with at least one oxygen; R is a C1 to C20 linear, branched or cyclic alkyl, or a C6 to C10 aryl; B is —(CH2CHR1O)x—, k is 0 or 1, x is 1 to about 20, A is —(CH2)m[(CHR1CH2O)]s—[(CH2)m(CH)tCHOH(CH2)m]e—, wherein each m is independently 0 to 3, s is 0 to about 30, t is 0 or 1, and e is 0 or 1, R1 is H or CH3, Q is: —OP(O)(O?M+)(O)—, —O—, —S—(CH2)m—C(O)—O—, —SO2—O— —CH2CH2O—C(O)CH2C(OH)(V)CH2C(O)O—; —(CH2CH2O)xCH2CH(OH)—(CH2CH2O)x—(CH2)m—Si[OSi(R2)3]2—, —SO2NR2—, —(CH2CH2O)zC(O)CH(SO3?M+)CH2C(O)(OCH2CH2)z— wherein z is 1 to about 15, or a bond when s is a positive integer, V is —C(O)OR3 and R3 is H, CH3 or Rf; R2 is C1 to C4 alkyl, and M+ is a Group 1 metal or an ammonium (NHxR2y)+ cation wherein x+y=4, and R2 is C1 to C4 alkyl, provided that when Q is —OP(O)(O?M+)(O)— or when Q is —(

Abstract: A process of repairing a plasma etched low-k dielectric material having surface-bound silanol groups includes exposing at least one surface of the dielectric material to (a) a catalyst so as to form hydrogen bonds between the catalyst and the surface-bound silanol groups obtaining a catalytic intermediary that reacts with the silane capping agent so as to form surface-bound silane compounds, or (b) a solution comprising a supercritical solvent, a catalyst, and a silane capping agent so as to form hydrogen bonds between a catalyst and the surface-bound silanol groups obtaining a catalytic intermediary that reacts with the silane capping agent so as to form surface-bound silane compounds. Horizontal networks can be formed between adjacent surface-bound silane compounds.

Abstract: The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.

Abstract: A liquid polishing composition of the invention suitable for polishing an automobile and the like comprises about 0.01 to about 3 percent by weight of at least one silicone-based wax, about 0.20 to about 10 percent by weight of poly(alpha olefin) compounds including about 0.1 to about 5 percent by weight of at least one hyperbranched poly(alpha olefin), about 6 to about 60 percent by weight of at least one polydimethylsiloxane silicone fluid, about 1 to about 20 percent by weight of at least one volatile cyclic silicone, about 0.25 to about 3 percent by weight of at least one amino-functional silicone, about 0.01 to about 5 percent by weight of at least one UV absorber, and a petroleum-based carrier therefor. The liquid polishing composition can be packaged together with a microfiber polishing cloth in the form of a polishing kit.

Abstract: A process for replacing the continuous phase of a nanoparticle dispersion with a less polar phase, includes filtering the dispersion through a semi-permeable membrane filter to remove the continuous phase, and introducing a less polar phase.

Abstract: A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.

Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Abstract: There is provided a hydrophilizable wax composition which provides a wax coating layer having a hydrophilic surface and imparts a gloss and long-lasting stain-proofing property on a substrate. The hydrophilizable wax composition can form a hydrophilizable wax coating layer by applying the composition containing a hydrophilizing agent and wax component and wiping off the composition, in which the hydrophilizing agent has hydrolyzable groups which are converted into hydrophilic groups by hydrolysis in the presence of water and are condensed to enable the hydrophilizing agent to have a high molecular weight and is, for example, an organometallic compound having a releasable group by hydrolysis, its oligomer and/or a co-oligomer comprising two or more of the compounds.

Abstract: Compositions comprising disiloxane surfactant compositions comprising a silicone composition comprising a silicone having the formula: MM? where M=R1R2R3SiO1/2; M?=R4R5R6SiO1/2; with R1 selected from the group consisting of branched monovalent hydrocarbon radical of from 3 to 6 carbon atoms and R7, where R7 has the formula: R8R9R10SiR12 with R8, R9, and R10 each independently selected from the group of monovalent hydrocarbon radicals having from 1 to 6 carbon atoms and monovalent aryl or alkaryl hydrocarbon radicals having from 6 to 13 carbon atoms and R12 is a divalent hydrocarbon radical having from 1 to 3 carbon atoms, R2 and R3 are each independently selected from the group of from 1 to 6 carbon atom monovalent hydrocarbon radicals or R1, with R4 an alkylpolyalkyleneoxide of the general formula: R13(C2H4O)a(C3H6O)b(C4H8O)cR14 where R13 is a divalent linear or branched hydrocarbon radical having the structure: —CH2—CH(R15)(R16)dO— where R15 is H or methyl; R16 is a divalent al

Abstract: Provided are azeotrope-like compositions consisting essentially of 1,1,1,2-tetrafluoropropene and 1,1,1,2-tetrafluoroethane and uses thereof, including use in refrigerant compositions, refrigeration systems, blowing agent compositions, and aerosol propellants.

Abstract: A polishing composition comprising an abrasive and water, wherein the polishing composition has an index of degree of sedimentation of 80 or more and 100 or less; a process for producing a substrate comprising polishing a substrate to be polished using the above-mentioned composition; a process for preventing clogging of a polishing pad comprising applying the above-mentioned composition; a process for preventing clogging of a polishing pad comprising applying the above-mentioned composition to polishing with a polishing pad for a nickel-containing object to be polished; and a process for preventing clogging of a polishing pad comprising applying a composition comprising a hydrophilic polymer having two or more hydrophilic groups in its molecule and a molecular weight of 300 or more, or a compound capable of dissolving nickel hydroxide at a pH of 8.0, and water to polishing with a polishing pad for a nickel-containing object to be polished.

Abstract: The present invention provides a method of synthesizing abrasive particles and methods of using the same in chemical mechanical polishing slurry applications. The nanosized abrasive particles according to the invention are produced by hydrothermal synthesis using an insoluble source of cerium. The crystallites of the particles include cerium ions and titanium ions.

Abstract: Embodiments of the present invention provide polymer matrix nanocomposites reinforced with nano-scale materials such as nanoparticles and carbon nanotubes and methods of fabricating. The nanomaterials are provided within relatively low weight fractions, for example in the range of approximately 0.01 to about 0.4% by weight and distributed within the matrix by a magnetic mixing procedure to provide substantially uniform reinforcement of the nanocomposites. Advantageously, these nanocomposites provide significantly enhanced tensile strength, strain to failure, and fracture toughness over corresponding neat matrices.

Abstract: A water-based, non-oily, scented, liquid composition, with an ultraviolet filter, to be applied manually by brush or sponge, or by using an air gun, to surfaces of a synthetic nature. When impregnated, such surfaces recover their shine to an extent according to the number of layers applied, and are renewed in appearance.

Abstract: A composition comprising a compound of formula (I) or (II): (A)w-P(O)(O?M+)3-w ??(I) or wherein A is Rf—(CH2)k?[(CF2CF)y—(CH2CH2)z]mO and contains from about 8 to about 22 carbon atoms; Rf is CnF2n+1; n and k are each independently 1 to about 6; y, z, and m are each independently 1, 2, 3, or mixture thereof; w is 1 or 2 or a mixture thereof; and M is hydrogen, ammonium ion, an alkali metal ion, or an alkanolammonium ion.

Abstract: Polish compositions for coating pharmaceutical solid dosage forms such as tablets are disclosed. The polish composition comprises water, coating agent, and a film forming agent. Polished pharmaceutical solid dosage forms such as tablets comprising a polished exterior surface are also disclosed. Processes of polishing pharmaceutical solid dosage forms such as tablets are disclosed.

Abstract: A semiconductor polishing composition is disclosed. The composition includes fumed silica. The semiconductor polishing composition is an aqueous dispersion solution of fumed silica. Further, the number of particles of fumed silica having a particle diameter of 0.5 ?m or more is 600,000 pieces/ml or less and the number of particles of fumed silica having a particle diameter of 1 ?m or more is 6000 pieces/ml or less.

Abstract: A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition preferably further contains an alkali compound, a water-soluble polymer, or a chelating agent. The polishing composition is suitable for use in polishing an edge of an object such as a semiconductor substrate.

Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

Abstract: The invention relates to application of solvent(s) to a product including at least one binder, wherein the product is a paint or coating formulation and the solvent is a compound of renewable vegetable origin, notably agricultural origin. It also relates to a paint or coating including at least one binder and one solvent, wherein the solvent is of renewable vegetable origin. Formulations are given.

Abstract: The present invention provides an abrasive compound suitable for polishing the surface of a glass substrate for an optical disk platter or a magnetic disk platter. More specifically, the present invention provides an abrasive compound for a glass hard disk platter, characterized as comprising a stable slurry having water and, dispersed therein as an abrasive, cerium(IV) oxide particles having an average secondary particle size of 0.1 to 0.5 ?m and containing CeO2 in a concentration of 0.2 to 30 wt %. Preferably, the present invention provides the above abrasive compound in which cerium amounts for 95% or more in terms of oxides of the total amount of rare earth elements in the abrasive.

Abstract: A new barrier slurry composition enables metal and barrier layer material (as well as cap layer material, if necessary) to be removed at a practical rate whilst eliminating, or significantly reducing, the removal of underlying low-k or ultra-low-k dielectric material. The barrier slurry composition comprises: water, an oxidizing agent such as hydrogen peroxide, an abrasive such as colloidal silica abrasive, a complexing agent such as citrate, and may comprise a corrosion inhibitor such as benzotriazole. The preferential removal of cap layer material relative to underlying ULK dielectric material can be enhanced by including in the barrier slurry composition a first additive, such as sodium bis(2-ethylhexyl) sulfosuccinate. The removal rate of the barrier layer material can be tuned by including in the barrier slurry composition a second additive, such as ammonium nitrate.

Abstract: The present invention relates to a process for preparing a polishing composition comprising a colloidal silica prepared from a silicate. The first step involves adjusting the pH of a silica dispersion comprising colloidal silica, having an average particle size of primary particles of 1 nm or more and less than 40 nm, to a range of from 10 to 14. The second step involves re-adjusting the pH of the silica dispersion obtained in the first step to a range of from 1 to 6. A density of silanol groups is formed on the surface of the colloidal silica that is from 0.06 to 0.3 mmol per 1 g of the colloidal silica.

Abstract: In certain embodiments, a method of processing detonation nanodiamonds to fractionate the detonation nanodiamonds involves, in order forming a combination of detonation nanodiamonds and a solvent, said solvent containing at least approximately 10% DMSO (v/v), applying a dispersive technique to said combination, subjecting said combination to a procedure that causes nanodiamond particles of a first size range to be substantially spatially separated from nanodiamonds of a second size range, and collecting said nanodiamonds of said first size range essentially free of said second size range. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

Abstract: The invention provides a surface active ingredient composition, which includes a base liquid including water which has dispersed therein in percentages by volume: Sodium Chloride 1 to 3% Magnesium 1 to 2% Calcium 1 to 2% Potassium 1 to 2% Sulphate 1 to 2% Carbon 0.5 to 1% Nitrate 1 to 2% and Phosphate 1 to 2% sodium chloride dissolved in the base liquid; and sodium alkyl ether sulphate dissolved in the base liquid, with the portion of the base liquid to sodium chloride and sodium alkyl ether sulphate being between 1:1:1.5 and 1:1:5. The invention further provides a process for producing same and uses thereof.

Abstract: Corrosion inhibiting composition for use in aqueous or semi-aqueous stripping, cleaning, abrasive lapping and abrasive slurry compositions that form 5, 6, 7, or 8-membered chelating rings with a base metal together with a film forming polymeric chelation agent. Optionally there is included an oxygen scavenger.

Abstract: A microwaviness reducing agent for polishing a substrate for a precision part, containing either a surfactant having two or more ionic hydrophilic groups, or a polycarboxylic acid compound having 2 to 15 total carbon atoms and having either OH group or groups or SH group or groups, or a salt thereof; a polishing composition for a substrate for a precision part, containing the microwaviness reducing agent, an abrasive and water; a polishing composition comprising water, an abrasive, an organic acid or a salt thereof, and a surfactant, wherein the organic acid is a polycarboxylic acid compound having 2 to 15 total carbon atoms and having either OH group or groups or SH group or groups, and wherein the surfactant has two or more ionic hydrophilic groups in its molecule and has a molecular weight of 300 or more; a method of reducing microwaviness of a substrate for a precision part; and a method for manufacturing a substrate for a precision part.

Abstract: The use of 2,4?-dimethylpropiophenone as a fragrance substance is described, preferably as a fragrance substance for imparting, modifying and/or reinforcing one, two, three or all the odor notes floral, rosy, rose oxide-like and herbal-like, preferably both of the odor notes rose oxide-like and herbal-like.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 ?m. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

Abstract: A metal polishing composition comprising at least one of the compound represented by formula (1) defined herein and the compound represented by formula (2) defined herein, and an oxidizing agent, and a chemical mechanical polishing method comprising bringing the metal polishing composition into contact with a surface to be polished and providing a relative movement between the surface to be polished and a polishing surface.

Abstract: A composition for simultaneously cleaning and waxing non-porous surfaces without the need for additional rinsing of the treated surface with water, has a pH of from about 6 to about 7 and contains by weight: (a) from about 0.04 to about 0.12% of an acrylic-based polymer, wherein the acrylic-based polymer is a hydrophobically modified, crosslinked polyacrylate powder which has been crosslinked with a polyalkenyl polyether or is an acrylic polymer containing acid groups and which dissolves and swells immediately when neutralized with an alkali salt (b) from about 0.5 to about 5.0% of a silicone blend composed of: (i) from about 70 to about 95% of a first polydiorganosiloxane fluid having a viscosity of from about 0.65 to about 60,000 centistokes at 25° C., and (ii) from about 5 to about 30% of a polydiorganosiloxane fluid mixture having a viscosity of from about 500 to about 2000 centistokes at 25° C.

Abstract: Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2˜10 weight % of colloidal silica having an average particle size of 30˜80 nm; 0.5˜1.5 % by weight of ammonia; 0.2˜1 weight % of a hydroxyalkycellulose-based polymer for modifying rheology of the composition; 0.03˜0.5 weight % of a polyoxyethylenealkylamine ether-based nonionic surfactant; 0.01˜1 weight % of a quaternary ammonium base and the balance of deionized water.