Abstract: A slurry for chemical mechanical polishing (CMP) of a copper or silver containing film provides at least one reactant for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film. The soft layer has a hardness less than the copper or silver film. The slurry preferably includes either no particles or particles which are softer than the copper or silver layer. A method for chemical mechanical polishing (CMP) a copper or silver containing film includes the steps of providing a slurry for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film and uses either no particles or particles softer than the copper or silver film, applying the slurry to the copper or silver film to form the soft layer, and removing the soft layer using a polishing pad.

Abstract: The present invention provides a process for producing particles suitable for use as abrasives in chemical-mechanical polishing slurries. The process according to the invention includes mixing at least one crystallization promoter such as Ti[OCH(CH3)2)]4 with at least one cerium compound and at least one solvent, and subjecting said mixture to hydrothermal treatment at a temperature of from about 60° C. to about 700° C. to produce the particles. Particles formed in accordance with the present invention exhibit a large crystallite size, and can be used to polish silicon-containing substrates to a high degree of planarity at a relatively high rate.

Abstract: A polishing composition comprising an abrasive, an oxidizing agent, a polishing accelerator, and water, wherein the polishing accelerator comprises an organic phosphonic acid; a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above polishing composition; a method for polishing a substrate comprising polishing a substrate to be polished with the above polishing composition; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above polishing composition; and a process for accelerating polishing of a magnetic disk substrate, comprising applying the above polishing composition to a magnetic disk substrate to be polished. The polishing composition is highly suitable for polishing a magnetic disk substrate requiring high surface quality to be used in memory hard disk drives.

Abstract: A polishing composition for polishing a semiconductor device having at least a tungsten film and an insulating film, which comprises the following components (a) to (d): (a) silicon dioxide, (b) periodic acid, (c) at least one pH controlling agent selected from the group consisting of ammonia, potassium hydroxide, sodium hydroxide, ammonium periodate, potassium periodate and sodium periodate, and (d) water.

Abstract: The present invention provides a polishing composition that inhibits the occurrence of erosion. The polishing composition contains silicon oxide, a polyoxyethylene alkyl ether sulfate, a benzotriazole corrosion inhibitor, an acid, and water. The silicon oxide is preferably colloidal silica, the acid is preferably lactic acid, and the pH of the polishing composition is preferably 1.5 to 4.0.

Abstract: This invention relates to a chemical mechanical polishing slurry comprising polishing grains, ammonium nitrate as an oxidizing agent, 1,2,4-triazole as a polishing promoter for a copper metal film and water and having a pH within a range of 3 to 4. The polishing slurry is suitable for forming a damascene copper-based metal interconnection comprising a tantalumr-based metal as a barrier metal film material.

Abstract: A polishing composition for a substrate for a magnetic disk, which comprises: (a) a polishing accelerator composed of at least one compound selected from the group consisting of malic acid, glycolic acid, succinic acid, citric acid, maleic acid, itaconic acid, malonic acid, iminodiacetic acid, gluconic acid, lactic acid, mandelic acid, crotonic acid, nicotinic acid, aluminum nitrate, aluminum sulfate and iron(III) nitrate, (b) an edge sagging preventive agent composed of at least one compound selected from the group consisting of a polyvinylpyrrolidone, a polyoxyethylene sorbitan fatty acid ester and a polyoxyethylene sorbit fatty acid ester, (c) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide and silicon carbide, and (d) water.

Abstract: A polishing slurry composition for CMP comprising 0.5 to 5% by weight of a silica-coated ceria powder dispersed in an aqueous medium can be beneficially used in the planarization of the surfaces of various film layers of semi-conductors and electro-luminescent devices.

Abstract: The present invention provides nanoporous &agr;-alumina powders comprising powder comprising interconnected &agr;-alumina primary particles having an average particle size of less than about 100 nm and an interpenetrated array of pores or voids. The invention also provides nanosized &agr;-alumina powders comprising &agr;-alumina particles having an average particle size of less than about 100 nm and slurries, particularly aqueous slurries, which comprise nanosized &agr;-alumina powders of the invention. The invention further provides methods of manufacturing nanoporous &agr;-alumina powders and nanosized &agr;-alumina powders of the invention and methods of polishing using slurries of the invention.

Abstract: An abrasive for metal having particle that have a functional group capable of trapping a metal ion, a process for producing the abrasive, and a polishing composition having the abrasive, an oxidizing agent and water, are provided.

Abstract: The present invention relates to a polishing composition more suitable for use in polishing synthetic resin products or metal products. The polishing composition includes a reaction product produced by a reaction between a polyalkylene oxide and a compound having a functional group having reactivity with a hydroxyl group, aluminum oxide, a polishing accelerator including at least one salt selected from the group consisting of a metal salt of an inorganic acid or organic acid and an ammonium salt of an inorganic acid or organic acid, and water.

Abstract: A wax or polish also known as a surface protectant where ones primary reason for applying it is to impart a long lasting and specific scent or fragrance to a surface, such as that of an automobile, or any other surface of choice. As a secondary consideration the product will also offer surface protection from the elements.

Abstract: An aqueous dispersion for chemical mechanical polishing that is hard to putrefy, scarcely causes scratches, causes only small dishing and is suitable for used in a micro isolating step or a planarizing step of an inter layer dielectric in production of semiconductor devices, which dispersion comprises ceria particles, a preservative composed of a compound having a heterocyclic structure containing a nitrogen atom and a sulfur atom in the ring, such as an isothiazolone compound, and an organic component such as organic abrasive grains composed of resin particles, a dispersing agent composed of a water-soluble polymer having a specific molecular weight or the like, a surfactant and/or an organic acid or a salt thereof contained in an aqueous medium, wherein the ceria particles, preservative and organic component are contained in proportions of 0.1 to 20% by mass, 0.001 to 0.2% by mass and 0.

Abstract: A polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g/cm3 and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time.

Abstract: A finishing composition for a variety of surfaces, including, without limitation, paints, metals, plastics and fiberglass, comprises water, wax, soap, scent, hair conditioner, mineral spirits and abrasives.

Abstract: A novel CMP slurry composition used for polishing metals, the composition comprising: a dispersion solution comprising an abrasive. The slurry composition has a large particle count of about 25 to about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.

Abstract: The invention provides a chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged electrolyte.

Abstract: A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide, a polyoxyethylene alkyl ether, a polyoxypropylene alkyl ether, a polyoxyethylenepolyoxypropylene alkyl ether and a polyoxyalkylene addition polymer having a C≡C triple bond, represented by the formula (1): wherein each of R1 to R6 is H or a C1-10 alkyl group, each of X and Y is an ethyleneoxy group or a propyleneoxy group, and each of m and n is a positive number of from 1 to 20, (c) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (e) hydrogen peroxide, and (f) water.

Abstract: Metal oxide particles having a metal oxide core and a silicon dioxide coating have a low structure. The particle are produced by a base dissolved in water being added under agitation to a dispersion comprising a metal oxide, at least one compound of the type XnSi(OR)4−n, and water, the reaction product being separated out, optionally washed with water and dried. The metal oxide particles coated with silicon dioxide may be used in sun screening agents and in chemical-mechanical-polishing (CMP) applications.

Abstract: The present invention relates to an aqueous dispersion containing a silicon dioxide powder coated with cerium oxide. In addition, the present invention provides a method of producing an aqueous dispersion containing a silicon dioxide powder coated with cerium oxide and methods of using this aqueous dispersion for chemical-mechanical polishing.

Abstract: A self-shining aerosol-type shoe polish composition consisting essentially of 0.5 to 25% by volume of a silicone compound, optionally 3 to 25% by volume of a drying retardant and/or 0.1 to 1% by volume of an anti-static agent component, and the remainder of liquefied gas as a solvent as well as a propellant gas, exhibits excellent drying properties and self-shining effect when sprayed on the surface of shoes.

Abstract: A process for producing a hardenable composition with high storage stability containing scaly silica particles which consist essentially of foliar secondary silica particles and have a laminated structure, said process comprising: (1) a step of subjecting a silica sol, a silica hydrogel or hydrous silicic acid to hydrothermal treatment in the presence of an alkali metal salt to form tertiary agglomerated particles of the scaly silica in the form of porous three-dimensional disorderly agglomerates of foliar secondary silica particles, each secondary particle being formed by a parallel face-to-face alignment of a plurality of flaky primary particles which are overlaid one on another, and (2) a step of disintegrating and dispersing the tertiary agglomerated particles of silica in an organic polymer in the form of an aqueous emulsion by a wet method.

Abstract: The present invention provides a polishing composition that inhibits the occurrence of erosion. The polishing composition contains silicon oxide, a polyoxyethylene alkyl ether sulfate, a benzotriazole corrosion inhibitor, an acid, and water. The silicon oxide is preferably colloidal silica, the acid is preferably lactic acid, and the pH of the polishing composition is preferably 1.5 to 4.0.

Abstract: An aqueous dispersion containing abrasive particles comprises abrasive particles having superparamagnetic metal oxide domains in a non-magnetic metal oxide or non-metal oxide matrix. The abrasive particles of the aqueous dispersion can have an average particle size of below 400 nm and a BET surface area of 50 to 600 m2/g. The dispersion can be produced by dispersing the abrasive particles with an energy of at least 200 kJ/m3 using a device in which the abrasive particles are first subjected to high pressure, then decompressed through a nozzle so that the abrasive particles collide with one another or against sections of wall in the device. The aqueous dispersion can be used for chemical mechanical polishing (CMP).

Abstract: A composition is described that comprises an abrasive, and a hydrocarbon containing component that is coupled to the abrasive. Such a composition may be included in a slurry that is used to polish a substrate, when forming a semiconductor device. Also described is a method for modifying a surface of an abrasive that comprises coupling a hydrocarbon containing component to the surface of the abrasive.

Abstract: Furniture polishes, and methods for their use, are disclosed. The polishes are liquids in the form of a dispersion which is a biliquid foam with a thickener, where the foam is structured as an oil-in-water complex. The dispersion has an oil portion having a polysiloxane and/or a hydrocarbon oil such as a mineral oil. There is also surfactant such as one nonionic surfactant and one more polar surfactant. Water is also provided. The polish is preferably essentially free alcohols.

Abstract: The present invention provides the colloidal silica slurry which does not have a bad influence, such as corrosion, to a silicon wafer and wiring material on a silicon wafer and inhibits growth of microbes, and whereof preserving stability is high because stability of particle diameters of a colloidal particle is superior and using for a long period continuously is possible. For providing the above, the colloidal silica slurry wherein hydrogen peroxide from 5 to 100 ppm is added.

Abstract: An ultrahigh molecular weight polymer, such as ultrahigh molecular weight polyisobutylene, is used as an additive to enhance the coating properties of a solvent. The polyisobutylene has a molecular weight of at least 2.5-3.0 million daltons, preferably greater than about 6 daltons, and is provided in a preferred concentration of 0.05 to 0.3%. The solvent can be a medicinal grade mineral oil. Other suitable solvents include hydrocarbon oil and low viscosity, synthetic compositions. In all cases, the coating properties of the solvent are greatly enhanced by the addition of ultrahigh molecular weight polyisobutylene. In another aspect of the invention, ultrahigh molecular weight polyisobutylene is used as an additive to enhance the viscoelasticity of a mineral oil based sunscreen formulation. In still another aspect of the invention, the fibers of a fabric material are coated with an ultrahigh molecular weight polymer to greatly strengthen the fabric.

Abstract: A composition is described that comprises an abrasive, and a hydrocarbon containing component that is coupled to the abrasive. Such a composition may be included in a slurry that is used to polish a substrate, when forming a semiconductor device. Also described is a method for modifying a surface of an abrasive that comprises coupling a hydrocarbon containing component to the surface of the abrasive.

Abstract: Methods and apparatus for chemical mechanical planarization of an article such as a semiconductor wafer use polishing slurries including a carbon dioxide solvent or a carbon dioxide-philic composition. A carbon dioxide cleaning solvent step and apparatus may also be employed.

Abstract: Gel-free colloidal abrasive polishing compositions and associated methods for polishing (e.g., chemical mechanical polishing) are described. These abrasive polishing compositions are comprised of a surface-modified colloidal abrasive that has been modified with a boron-containing compound(s), such as boron surface-modified colloidal ceria or silica. These compositions are useful in chemical mechanical planarization (CMP) applications as well as in substrate polishing applications. These abrasive compositions are most often negatively-charged colloids, which remain as stable negatively-charged colloids even in acidic media.

Abstract: Granules based on aluminium oxide having the characteristics: Average grain diameter: 5.0 to 150 &mgr;m Tamped density: 300 to 1200 g/l The granules are produced by dispersing aluminium oxide in water, performing spray drying, optionally heat treatment and/or silanization. In silanized form, the granules have the following characteristics: Average grain diameter: 5 to 160 &mgr;m Tamped density: 300 to 1200 g/l Carbon content: 0.3 to 12.0 wt. % The granules are used inter alia as catalyst supports, in cosmetics, in toner powders, in paints and lacquers, as abrasives and polishing agents and as a raw material in the production of glass and ceramics.

Abstract: A tantalum-based liner for copper metallurgy is selectively removed by chemical-mechanical planarization (CMP) in an acidic slurry of an oxidizer such as hydrogen peroxide, deionized water, a corrosion inhibitor such as BTA, and a surfactant such as Duponol SP, resulting in a high removal rate of the liner without appreciable removal of the exposed copper and with minimal dishing.

Abstract: A reaction product of (I) an aqueous emulsion of a copolymer of (a) 5-50 wt % of an ethylenically unsaturated carboxylic acid monomer and/or the salt thereof, (b) 0.05-20 wt % of ethylenically unsaturated sulfonic acid monomer and/or the salt thereof, and (c) other ethylenically unsaturated monomers polymerizable with the monomers (a) and (b), provided that the total of monomers (a), (b), and (c) is 100 wt %, the copolymer having a Tg from −30° C. to +20° C., and (II) a polyvalent metal compound. The reaction product is useful as a floor polish excelling in durability, adhesion to substrates, and recoatability that are well balanced with removability with an alkali, and decreased TVOC due to absence or low content of a low boiling point coalescent agent and plasticizer.

Abstract: Furniture polishes, and methods for their use, are disclosed. The polishes are liquids in the form of a dispersion which is a biliquid foam with a thickener, where the foam is structured as an oil-in-water complex. The dispersion has an oil portion having a polysiloxane and/or a hydrocarbon oil such as a mineral oil. There is also surfactant such as one nonionic surfactant and one more polar surfactant. Water is also provided. The polish is preferably essentially free alcohols.

Abstract: The present invention can provide an abrasive composition for polishing a semiconductor device which composition contains water, microparticles of an abrasive, and a chelating agent, wherein the abrasive is cerium oxide; the microparticles of cerium oxide have an average particle size of 0.01-1.0 &mgr;m and which composition is used for suitably forming a shallow trench isolation structure in a well-controlled manner during planarization of a semiconductor device including element-isolated structure. The invention also provides a method for producing the semiconductor device by use of the abrasive composition.

Abstract: The invention pertains to a liquid polish for metals, glass, plastics and their derivatives: the novel liquid polish reduces application and buffing time significantly compared to prior art polishes using animal fat, glycerides, oils, wetting agents or tallow and uses unique compounds for increasing contact between the abrasive oxides within said liquid polish and surface contaminants of polished materials.

Abstract: A polishing composition comprising an abrasive, an acid and/or a salt thereof, and water, wherein copper (Cu) is contained in an amount of 1 mg or less per kg of the polishing composition; a process for reducing a surface defect of a substrate comprising applying to a substrate or a polishing pad a polishing composition comprising an abrasive, an acid and/or a salt thereof, and water, wherein copper (Cu) is contained in an amount of 1 mg or less per kg of the polishing composition fed to the substrate or the polishing pad; and a process for manufacturing a substrate comprising a polishing step comprising applying to a substrate or a polishing pad the above polishing composition.

Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be coformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.

Abstract: For aluminum disks and glass-made hard disks, those disks having a mean waviness of less than 3 Å are being desired in order to increase the density of memory capacity. The present invention provides polishing compositions that can give smoothly polished surfaces for the disks. The polishing compositions are polishing compositions for aluminum disks or substrates having silica on the surface thereof, which contain colloidal silica particle groups having different particle size distributions and have a SiO2 concentration of 0.5 to 50% by weight.

Abstract: A polishing composition comprising polymer particles and inorganic particles in an aqueous medium, wherein the inorganic particles have an average particle size of from 5 to 170 nm, and wherein an average particle size Dp (nm) of said polymer particles and an average particle size Di (nm) of said inorganic particles satisfy the following formula (1): Dp≦Di+50 nm (1); a polishing process for a substrate to be polished comprising polishing the substrate to be polished with the polishing composition as defined above; and a process for improving a rate for polishing a substrate to be polished with the polishing composition as defined above. The polishing composition of the present invention can be favorably used in polishing the substrate for precision parts, including semiconductor substrates; substrates for magnetic recording media such as magnetic discs, optical discs and opto-magnetic discs; photomask substrates; glass for liquid crystals; optical lenses; optical mirrors; optical prisms; and the like.

Abstract: An acidic polishing slurry for chemical-mechanical polishing, containing 0.1 to 5% by weight of a colloidal silica abrasive and 0.5 to 10% by weight of a fluoride salt, is distinguished by a higher polishing selectivity with regard to the rate at which silica is removed compared to the rate at which silicon nitride is removed compared to a conventional polishing slurry containing pyrogenic silica.

Abstract: A polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g/cm3 and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time.

Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

Abstract: The present invention provides an abrasive compound suitable for polishing the surface of a glass substrate for an optical disk platter or a magnetic disk platter. More specifically, the present invention provides an abrasive compound for a glass hard disk platter, characterized as comprising a stable slurry having water and, dispersed therein as an abrasive, cerium(IV) oxide particles having an average secondary particle size of 0.1 to 0.5 &mgr;m and containing CeO2 in a concentration of 0.2 to 30 wt %. Preferably, the present invention provides the above abrasive compound in which cerium amounts for 95% or more in terms of oxides of the total amount of rare earth elements in the abrasive.

Abstract: Polishing rate selectivity is increased by providing a polyelectrolyte in the polishing slurry. The polishing selectivity of silicon oxide to silicon nitride is enhanced by using an anionic polyelectrolyte. The polishing selectivity of metals to silicon oxide, silicon nitride and/or silicon oxynitride is increased by using a cationic polyelectrolyte.

Abstract: Substantially monodisperse crystalline ceric oxide sols and processes for producing such sols are provided. Sols include crystalline ceric oxide particles having a particle size I (particle size converted from specific surface area by gas absorption method) ranging from 10 nm to 200 nm and a ratio of particle size II (particle size measured by dynamic light scattering method) to particle size I ranging from 2 to 6. Sols can be prepared by reacting a cerium (III) salt with an alkaline substance in an aqueous medium under an inert gas atmosphere to obtain a suspension of cerium (III) hydroxide, immediately blowing oxygen or a gas containing oxygen into the suspension to obtain a sol comprising crystalline ceric oxide particles, and wet grinding the resulting sol. Sols are also prepared by calcining cerium carbonate at a temperature of 300 to 1100° C. to give cerium oxide particles, and wet-grinding the resulting particles.

Abstract: A polishing composition comprising an aqueous medium and abrasive particles, wherein the abrasive particles comprise abrasive particles having a particle size of 2 to 200 nm in an amount of 50% by volume or more, the abrasive particles having a particle size of 2 to 200 nm comprising (i) 40 to 75% by volume of small size particles having a particle size of 2 nm or more and less than 58 nm; (ii) 0 to 50% by volume of intermediate size particles having a particle size of 58 nm or more and less than 75 nm; and (iii) 10 to 60% by volume of large size particles having a particle size of 75 nm or more and 200 nm or less; a polishing composition comprising an aqueous medium and abrasive particles, wherein the abrasive particles comprise abrasive particles (A) having an average particle size of 2 to 50 nm; and abrasive particles (B) having an average particle size of 52 to 200 nm, wherein a weight ratio of A to B (A/B) is from 0.5/1 to 4.

Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: A polish composition includes a siloxane polymer of the formula 1