Abstract: A leveling agent for water-based floor polishes which contains a nonionic surfactant, characterized in that the nonionic surfactant is at least one member selected from the group consisting of compounds represented by the general formula (1): R1—C(R2)H—CH2O—(C2H4O)m(C3H6O)n—H [wherein R1 represents C4-10 alkyl; R2 represents C6-12 alkyl; m is an integer of 1 to 10; n is an integer of 0 to 6; and the ethylene oxide unit(s) and the propylene oxide unit(s) are bonded in any desired sequence, i.e., in either block or random arrangement] and compounds represented by the general formula (II): R3O—(C2H4O)p(C3H6O)q—H [wherein R3 represents at least one residue of one or more aliphatic alcohols selected among 3,5,5-trimethylhexanol, isooctyl alcohol, isodecyl alcohol, isoundecyl alcohol, and isotridecyl alcohol; p is an integer of 0 to 8 and q is an integer of 0 to 8, provided that p+q is an integer of 2 to 8; and the ethylene oxide unit(s) and the propylene oxide unit(s) are bonded in any desired sequence, i.e.

Abstract: The invention provides a polishing composition comprising fumed alumina, alpha alumina, silica, a nonionic surfactant, a metal chelating organic acid, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, and abrading at least a portion of the substrate to polish the substrate.

Abstract: A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4.

Abstract: Provided are azeotrope-like compositions comprising difluoromethane and trifluoroiodomethane and uses thereof, including use in refrigerant compositions, refrigeration systems, blowing agent compositions, and aerosol propellants.

Abstract: A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Surprisingly, as little as 0.2 ppm and 12 ppm of activator is useful, if the activator-containing particles are suspended in the fluid as a slurry. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.

Abstract: A solvent based paste wax polish composition for metallic, plastic, and painted surfaces containing a blend of synthetic and natural waxes, a blend of silicone fluids, blend of solvents, zinc oxide nanoparticles UV agent having a particle size of 100 nanometers or less, alumina nanoparticles polishing agent having a particle size of 200 nanometers or less, and hydrophobically modified silica nanoparticles of 50 nanometers or less producing a polish having cleaning properties and an enhanced high glossed finish from a single application while exhibiting reduced white dry polish residue during the waxing process.

Abstract: A water in oil emulsion wax composition composed of natural and synthetic waxes, surfactants, suspending agents, and aluminum oxide particles of high purity of 0.20 micrometer or less containing no magnesium oxide and being agglomerate free together with a aliphatic hydrocarbon solvent producing a wax having cleaning properties and an enhanced high gloss surface from a single application.

Abstract: A chemical mechanical planarization solution is useful for removing tantalum barrier materials. The solution includes by weight percent 0 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal and 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tantalum removal agent selected from the group consisting of formamidine, formamidine salts, formamidine derivatives, guanidine derivatives, guanidine salts and mixtures thereof, 0 to 5 abrasive, 0 to 15 total particles selected from the group consisting of polymeric particles and polymer-coated coated particles and balance water. The solution has a tantalum nitride to TEOS selectivity of at least 3 to 1 as measured with a microporous polyurethane polishing pad pressure measure normal to a wafer less than 20.7 kPa.

Abstract: A polishing slurry is disclosed, which is to be used for polishing an ionic material, the polishing slurry including a dispersant which is to form a nonionic adsorbing layer on a surface of the ionic material. The dispersant may be selected by separately preparing first and second solutions containing first and second different dispersants, immersing test pieces each made of said ionic material into the first and second solutions, respectively, comparing a step between an etched portion and a non-etched portion of the test piece immersed in the first solution with a step between an etched portion and a non-etched portion of the test piece immersed in the second solution, and selecting the dispersant used in the solution in which the test piece having the smaller step is immersed.

Abstract: Compounds of formula (I) and formula (III): wherein A is —F or —CF3; Rf is independently C1-C6 perfluorinated linear or branched alkyl optionally interrupted by one or more oxygens; Ro is a linear or branched aliphatic group of about 10 to about 100 carbon atoms, interrupted by about 5 to about 50 ether oxygens, wherein the ratio of ether oxygen to carbon atoms is about 1:2 to about 1:3; and wherein each carbon atom has at most one ether oxygen atom bonded to it, and covalent bonding between ether oxygen atoms is absent; m is an integer of 1 to 3; Y?m is an anionic radical selected from the group consisting of halide, C1-C6 carboxylate, carbonate, hydrocarbonate, sulfate, hydrosulfate, C1-C6 sulfonate, phosphate, hydrophosphate, and dihydrophosphate. Further embodiments include methods of lowering surface tension of a medium comprising contacting the medium with a composition of formula (I), (III), or a mixture thereof.

Abstract: A surfactant of formula 1 (Rf-A)a-Q-([B]k—R)b??Formula 1 wherein a and b are each independently 1 or 2; Rf is a linear or branched perfluoroalkyl radical having from 2 to about 20 carbon atoms, optionally interrupted with at least one oxygen; R is a C1 to C20 linear, branched or cyclic alkyl, or a C6 to C10 aryl; B is —(CH2CHR1O)x—, k is 0 or 1, x is 1 to about 20, A is —(CH2)m[(CHR1CH2O)]s—[(CH2)m(CH)tCHOH(CH2)m]e—, wherein each m is independently 0 to 3, s is 0 to about 30, t is 0 or 1, and e is 0 or 1, R1 is H or CH3, Q is: —OP(O)(O?M+)(O)—, —O—, —S—(CH2)m—C(O)—O—, —SO2—O— —CH2CH2O—C(O)CH2C(OH)(V)CH2C(O)O—; —(CH2CH2O)xCH2CH(OH)—(CH2CH2O)x—(CH2)m—Si[OSi(R2)3]2—, —SO2NR2—, —(CH2CH2O)zC(O)CH(SO3?M+)CH2C(O)(OCH2CH2)z— wherein z is 1 to about 15, or a bond when s is a positive integer, V is —C(O)OR3 and R3 is H, CH3 or Rf; R2 is C1 to C4 alkyl, and M+ is a Group 1 metal or an ammonium (NHxR2y)+ cation wherein x+y=4, and R2 is C1 to C4 alkyl, provided that when Q is —OP(O)(O?M+)(O)— or when Q is —(

Abstract: Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

Abstract: A single step rub-on, rub-off combination cleaning and waxing CD and DVD restoration method and composition particularly suited for repairing damaged and dirty reflective coatings.

Abstract: The production method for cerium oxide particles of the present invention is a method of producing a cerium oxide particle by heating a cerium compound from a normal temperature to a temperature range of 400° C. to 1200° C., and comprises at least a temperature raising stage of a temperature rise speed of 2° C./hour to 60° C./hour, or proceeds via a stage of heating while supplying a humidified gas in a temperature raising process. By the method of the present invention, a cerium oxide powder whose particle diameter distribution of primary particles is narrow can be obtained. An aqueous cerium oxide slurry produced from the powder enables an improvement in the productivity and a reduction in the cost of a polishing step, because if it is used as an abrasive a high-quality polished face is obtained without deteriorating the polishing speed. The aqueous cerium oxide slurry of the present invention is particularly useful as an abrasive for final finish of a substrate whose main component is silica.

Abstract: Nanosized semiconductor particles of a core/shell structure is disclosed, wherein the particles each comprise a core and a shell and exhibit an average particle size of not more than 100 nm and a coefficient of variation in core size distribution of not more than 30%.

Abstract: Provided are methods for manufacturing improved cerium oxide abrasives suitable for forming slurry compositions suitable for CMP processes. The cerium oxide abrasives are produced by the heat treatment of a mixture of a cerium precursor compound under conditions that produce primary cerium oxide particles that are incorporated in larger secondary abrasive particles. The structure of the primary cerium oxide particles and/or the presence of incompletely oxidized cerium within the secondary abrasive particle tend to reduce its mechanical strength, thereby reducing the likelihood of damaging a substrate surface during a CMP process utilizing such abrasives.

Abstract: A cleaning and polishing composition contains mineral spirits, a first abrasive component of particles having a median size in a range of 1-4 microns, a second abrasive component of particles having a median size in a range of 15-30 microns and a fatty acid. The composition is a free flowing liquid having the viscosity of mineral spirits and has the ability to provide a long lasting finish. After cleaning and polishing an aluminum surface and after several weeks of rough use, the surface may be washed and looks like a newly polished surface. A preferred composition is 85-90% mineral spirits, balance stearic acid and aluminum oxide. The median particle size of the abrasive is less than about six microns and a sizeable fraction is below one micron.

Abstract: This invention relates to a method of making selected oxidizers or other free radical-producing compounds become more effective chemical etchants and/or oxidizers for CMP activities by promoting the formation of the free radicals in a CMP composition with one or more activators. The activator comprises iron, copper or combinations thereof. The activator coated abrasive is particularly effective as it brings the activator in close proximity to the targeted material on the substrate surface, and thus facilitates or accelerates the removal reaction substantially at the site of the targeted material. The activator reacts with the per-type oxidizer to form at least one oxygen-containing free radical. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced by this method.

Abstract: A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises a carrying fluid, colloidal particles, etchant, and a surfactant adsorbed and/or precipitated onto a surface of the colloidal particles and/or substrate. The surfactant has a hydrophobic section that forms a steric hindrance barrier and substantially prevents contaminates, including colloidal particles, from bonding to the substrate surface. The slurry is applied to the surface of the substrate while a pad mechanically rubs the surface. Subsequent cleaning with standard soap solutions removes substantially all remaining contamination from the substrate surface. In an exemplary embodiment, the slurry is used to superfinish a glass disk substrate to a surface roughness of less than 2 ?, with substantially no surface contamination as seen by atomic force microscopy (AFM) after standard soap cleaning steps.

Abstract: An abrasive composite, a method for making the abrasive composite, and a polishing apparatus using the abrasive composite are disclosed. The abrasive composite includes a matrix and a plurality of nano-particles distributed therein. The nano-particles are made of at least nano carbon sphere particles and fullerene particles. A ratio by weight of the nano carbon sphere particles to the fullerene particles is advantageously in the range from about 1:2 to about 1:1. The fullerenes are preferably C60 fullerenes. The abrasive composite further includes an amount of diamond particles admixed in the matrix, for improving hardness of the abrasive composite so as to accelerate polishing rate. The abrasive composite is preferably in a form of pellets. The pellets have an average grain size in the range from about 10 nanometers to about 200 nanometers.

Abstract: The invention provides low surface tension surfactants based on amino alcohol and also provides for their use in aqueous coating formulations, said surfactants being preparable by reacting at least one secondary amine of formula (I): with at least one diepoxide of formula (IV): and/or with at least one triepoxide of formula (IV): in essentially equivalent amounts of amine hydrogen atoms and epoxide groups.

Abstract: A composition for simultaneously cleaning and waxing non-porous surfaces without the need for additional rinsing of the treated surface with water, has a pH of from about 6 to about 7 and contains by weight: (a) from about 0.04 to about 0.12% of an acrylic-based polymer, wherein the acrylic-based polymer is a hydrophobically modified, crosslinked polyacrylate powder which has been crosslinked with a polyalkenyl polyether or is an acrylic polymer containing acid groups and which dissolves and swells immediately when neutralized with an alkali salt (b) from about 0.5 to about 5.0% of a silicone blend composed of: (i) from about 70 to about 95% of a first polydiorganosiloxane fluid having a viscosity of from about 0.65 to about 60,000 centistokes at 25° C., and (ii) from about 5 to about 30% of a polydiorganosiloxane fluid mixture having a viscosity of from about 500 to about 2000 centistokes at 25° C.

Abstract: A water based spray wax composition containing a microemulsion of a cationic wax nanoparticles, a quaternary silicone compound and zinc oxide nanoparticles providing long lasting protection of paint, glass, and metal, plastic, rubber, or elastomeric trim surfaces. The use of microemulsions or nanometer sized particles in the primary ingredients provides a transparent spray wax composition, which provides excellent coverage due to a significantly larger surface area, due to the nanoparticles used in the formulation. It also enables the wax particles to penetrate and fill small cracks and crevices for improved appearance, and durability of the spray wax properties.

Abstract: The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer of acrylic acid and methacrylic acid, and balance water, wherein the copolymer of acrylic acid and methacrylic acid has a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymer has a molecular weight in the range of 1K to 1000K.

Abstract: The present invention provides a liquid protectant composition composed of a cationic microemulsion of a natural wax (carnauba wax) nanometer sized particles and zinc oxide nanometer sized particles in combination with a quaternary siloxane compound. The protectant composition of the present invention cleans, protects preserves and enhances the appearances of leather or vinyl surfaces used for covering items in the home or in vehicles. The product is easy to apply to both smooth and textured surfaces and has a transparent appearance. The product dries quickly and does not leave an oily residue. Utilization of nano technology to select components having nano sized particles provides a uniform deposition of the product leaving a thin film having exceptional protection properties. Unlike conventional protectants, the invention of the instant composition dries quickly and leaves no oily residue behind.

Abstract: Finishing composition substantially free of non-volatile silicone materials and comprises a mixture of abrasive particles and an emulsion, which comprises water, a volatile siloxane, and a lubricant.

Abstract: A wax composition for application to a wet surfaces utilizing a polymeric emulsion with a cross-linked copolymer of acrylic acid and C10-30 alkyl acrylate whereby upon application to the surface to be waxed the hydrophilic portion of the polymer instantly collapses releasing the oil phase and providing immediate coverage of the application surface forming a film upon drying, and buffing the waxed surface with an absorbent material leaves a protective coating of wax of the surface which does not easily re-emulsify or wash off when further exposed to water.

Abstract: To provide a floor coating composition and floor coating composition additive. It is possible to improve the leveling performance, mopping performance, and other properties of a floor coating composition over those obtained with a conventional tributoxyethyl phosphate leveling agent by adding to a floor coating composition 1) a (C7-C10) aliphatic monocarboxylic acid monoester of a diol, or 2) a (C7-C10) aliphatic monocarboxylic acid monoester or diester of a triol.

Abstract: A polish composition for metallic surfaces containing a polish and abrasive alumina nanoparticles in a water in oil emulsion composition composed of surfactants, suspending agents, and aluminum oxide particles of high purity of 200 nanometers or less having a median particle diameter of 0.24 microns together with an aliphatic hydrocarbon solvent producing a polish having cleaning properties and an enhanced high glossed surface from a single application.

Abstract: A CMP slurry comprising polishing abrasives containing mixture abrasives of silica and alumina is used. In CMP using the slurry comprising mixture abrasives of silica and alumina as polishing abrasives, a down force-dependency of a polishing rate is high and an increase in dishing can be effectively suppressed.

Abstract: A dispersion of pyrogenically produced cerium oxide, which does not contain any particles larger than 1 ?m, is produced by dispersing a pyrogenically produced cerium oxide in water by means of a dissolver, centrifuging it, separating the supernatant from the bottom product, and again dispersing the supernatant by means of ultrasound. The dispersion can be used for chemical-mechanical polishing (CMP).

Abstract: Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 ?m or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 ?m or less, particularly, the STI process.

Abstract: A single step rub-on, rub-off combination cleaning and waxing composition particularly suited for automobiles, glass, plastics, fiberglass, tile, and floor coverings.

Abstract: The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.

Abstract: The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2) in a concentration working range of 4% to 12%. In a preferred embodiment the H2O2 concentration is approximately 6% and the pH is approximately 4.0 at polishing pressure 6 psi. A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole, 5-Methyl-1H-Benzotriazole, hydrogenated 4-Methyl-1H-Benzotriazole, hydrogenated 5-Methyl-1H-Benzotriazole, sodium octanoate, and water.

Abstract: A product for treating the surfaces of vehicles comprising a silanol-containing composition used to enhance gloss and aid in protecting substrates. More particularly, a product for treating vehicles comprising silanols and catalysts that cure to form a durable coating when exposed to the moisture in air.

Abstract: A polishing composition for memory hard disk containing water and silica particles, wherein the silica particles have a particle size distribution in which the relationship of a particle size (R) and a cumulative volume frequency (V) in a graph of particle size-cumulative volume frequency obtained by plotting a cumulative volume frequency (%) of the silica particles counted from a small particle size side against a particle size (nm) of the silica particles in the range of particle sizes of from 40 to 100 nm satisfy the following formula (1): V?0.5×R+40 (1), wherein the particle size is determined by observation with a transmission electron microscope (TEM). The polishing composition of the present invention can be even more suitably used for the manufacture of a substrate for precision parts such as substrates for memory hard disks.

Abstract: The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.

Abstract: The present invention provides an aqueous slurry composition that comprises cerium oxide and/or cerium oxide-containing mixed rare earth oxide abrasive particles, a polyacrylate, and an agent that retards hard settling. The agent that retards hard settling is preferably a polysaccharide such as xanthan gum, microcrystalline cellulose and/or sodium alginate, the latter of which may be treated with a divalent metal salt such as calcium carbonate. The slurry composition according to the invention can be used to polish glass and glass ceramics at a high removal rate, but does not hard settle upon extended static conditions and can be easily resuspended. The present invention also provides a method of polishing a glass or glass ceramic substrate using the slurry composition.

Abstract: The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.

Abstract: There is provided a composition comprising (a) at least one aqueous polymer dispersion, (b) at least one ester in the amount of 0.005 to 50 parts by weight of said ester, based on 100 weight parts of solids of all polymers in said aqueous composition, wherein said ester is selected from the group consisting of (i) a monoester of a C7-C10 aliphatic monocarboxylic acid with a dihydric alcohol, (ii) a monoester of a C7-C10 aliphatic monocarboxylic acid with a trihydric alcohol, (iii) a diester of a C7-C10 aliphatic monocarboxylic acid with a trihydric alcohol, and (iv) a mixture of two or more of said (i), (ii), and (iii), and (c) at least one surfactant, in the amount of 1.2 to 10 parts by weight of said surfactant, based on 100 weight parts of solids of all polymers in said aqueous composition.

Abstract: A polishing composition is provided containing an abrasive having an average particle size of from 1 to 30 nm and water, wherein the abrasive has a packing ratio of from 79 to 90% by weight; a method for manufacturing a substrate, including the steps of introducing the above polishing composition between a substrate and a polishing pad, and polishing the substrate, while contacting the substrate with the polishing composition; and a method for reducing scratches of a substrate to be polished, including the step of polishing the substrate to be polished with the above polishing composition. The polishing composition is suitable for polishing substrates for precision parts including, for example, substrates for magnetic recording media, such as magnetic disks, and opto-magnetic disks, photomask substrates, optical disks, optical lenses, optical mirrors, optical prisms and semiconductor substrates, and the like.

Abstract: Polycrystalline cerium oxide powder in the form of aggregates of primary particles with a specific surface of between 70 and 150 m2/g, an average primary particle diameter of between 5 and 20 nm and an average, projected aggregate diameter of between 20 and 100 nm. It is produced in that an aerosol is reacted in a flame obtained from a hydrogen-containing combustible gas and primary air and the solid obtained is then separated from the gaseous substances.

Abstract: A fumed-silica, which can make a slurry having sufficient wettability to a polar liquid, excellent dispersibility, and low viscosity even in the high concentration, and a slurry thereof. A fumed-silica and its slurry are provided, wherein the water content is controlled so that a weight loss after drying Y, and a dynamic wetting rate to water Z, have specified values.

Abstract: A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

Abstract: An abrasive composition is provided based on the following: an abrasive, preferably feldspar ??7-59% a clay, preferably smectite clay ??3-7% water ??37-64% an organic solvent, such as kerosene ??3-20%, and additionally, preferably contains calcium carbonate ??20-30%, and a surfactant 0.01-1%. The composition may have particles of up to 100 ?m, and preferably average particle size diameter of 30-45 ?m.

Abstract: The present invention relates to the manufacture and use of novel pre-coated abrasive particles and particle slurries for the chemical mechanical polishing (CMP) of semiconductor wafers, thin films, inter-layer dielectric, metals, and other components during integrated circuit, flat panel display, or MEMS manufacturing. For example, polishing slurry abrasive particles can be pre-coated with additives, such as, inhibitors and/or surfactants during manufacture of the abrasive particles or slurry. The additive's opportunity to react directly with the abrasive particles early in the particle manufacturing process provides a slurry having a more stable, selectable, and predictable ratio of abrasive particles pre-coated with a more stable, selectable, and predictable amount and type of additives.

Abstract: The invention provides a water-based low VOC shoe and leather care product having good product properties and characteristics, which can be formulated by making an appropriate and careful selection of ingredients and their amounts. A shoe and leather care product according to the invention has been found to give results in the treatment of leather (shoes) closely resembling the results found when using a conventional, high VOC shoe care product. Furthermore, such favourable results can be achieved while significantly reducing the amount of organic solvents in the product.

Abstract: A polishing composition for reducing the haze level of the surface of silicon wafers contains hydroxyethyl cellulose, polyethylene oxide, an alkaline compound, water, and silicon dioxide.

Abstract: The present invention relates to a polishing composition more suitable for use in polishing synthetic resin products or metal products. The polishing composition includes a reaction product produced by a reaction between a polyalkylene oxide and a compound having a functional group having reactivity with a hydroxyl group, aluminum oxide, a polishing accelerator including at least one salt selected from the group consisting of a metal salt of an inorganic acid or organic acid and an ammonium salt of an inorganic acid or organic acid, and water.