Abstract: The present invention relates to a polishing composition that can be preferably used to polish a silicon wafer. The polishing composition includes a block polyether represented by the chemical formula HO—(EO)a—(PO)b—(EO)c—H, wherein EO represents an oxyethylene group, PO represents an oxypropylene group, each of a and c represents the polymerization degree of ethylene oxide, b represents the polymerization degree of propylene oxide, and each of a, b, and c is an integer of 1 or greater; silicon dioxide; a basic compound; at least either one of hydroxyethyl cellulose and polyvinyl alcohol; and water.

Abstract: Slurries and methods for the chemical mechanical polishing of high density copper interconnects in a low k ILD are presented. In a particular embodiment of the present invention, a slurry for polishing copper is formed by combining a surfactant comprising an alkyl ethoxy organic acid such as glycolic acid ethoxylate lauryl ether (GAELE), an abrasive such as silica, an oxidizing agent such as hydrogen peroxide, and a chelating buffer system such as citric acid and potassium citrate dissolved in the mixture. This slurry provides a very low incidence of bent line defects, a low erosion rate, and a low dishing rate on a substrate comprising high density copper interconnects in a low k ILD. Embodiments of methods of the present invention use the disclosed slurries.

Abstract: A high concentration silica slurry can be used for polishing of substrates, such as semiconductor materials. The slurry contains a silica powder dispersed in an solvent. The silica slurry has a silica concentration of more than 50% by weight and a viscosity of less than 1000 mPa·s, wherein the silica powder has a ratio DL/DT of less than 1.3, wherein DL is an average particle size of the silica powder measured by a laser diffraction particle size distribution method and DT is an average primary particle size of the silica powder measured by a TEM photography observation, and wherein the silica powder has an average primary particle size of from 0.08 ?m to 0.8 ?m.

Abstract: Preservative composition for various materials and method of preserving the same is disclosed. The preservative composition includes at least one silane-containing material and at least one hydrocarbon solvent containing molecules of at least five carbon atoms.

Abstract: A chemical mechanical polishing slurry contains an alumina powder including ?-alumina particles and at least one other alumina particles having a crystal structure different from that of ?-alumina, and resin particles.

Abstract: The polishing composition is suitable for chemical mechanical polishing magnetic, optical, semiconductor or silicon substrates. The polishing composition includes abrasive particles in a liquid media. The abrasive particles have a particle core, the particle core having a hardness and a polymeric shell physisorbed to and encapsulating the particle core. The polymeric shell has a solid structure and a hardness lower than the hardness of the particle core. The abrasive particles have an average particle size of less than or equal to about 2 micrometers dispersed in the liquid media.

Abstract: Methods and solutions for forming self assembled organic monolayers that are covalently bound to metal interfaces are presented along with a device containing a self assembled organic monolayer. Embodiments of the present invention utilize self assembled thiolate monolayers to prevent the electromigration and surface diffusion of copper atoms while minimizing the resistance of the interconnect lines. Self assembled thiolate monolayers are used to cap the copper interconnect lines and chemically hold the copper atoms at the top of the lines in place, thus preventing surface diffusion. The use of self assembled thiolate monolayers minimizes the resistance of copper interconnect lines because only a single monolayer of approximately 10 ? and 20 ? in thickness is used.

Abstract: Aqueous dispersion containing a silicon-aluminum mixed oxide powder, the powder containing 0.1 to 99.9 wt. % Al2O3 and Si—O—Al-bonds. The dispersion can be produced using dispersing and/or grinding devices which a achieve an energy input of at least 200 KJ/m3. The dispersion can be used for the chemical-mechanical polishing of semiconductor substrates.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.

Abstract: A polishing composition for a substrate for memory hard disk comprising water and silica particles, wherein the silica particles have a particle size distribution in which the relationship of a particle size (R) and a cumulative volume frequency (V) in a graph of particle size-cumulative volume frequency obtained by plotting a cumulative volume frequency (%) of the silica particles counted from a small particle size side against a particle size (nm) of the silica particles satisfies the above formula (1) and the above formula (2), and wherein a particle size at 90% of a cumulative volume frequency (D90) is within the range of 65 nm or more and less than 105 nm. By using the polishing composition of the present invention, there can be efficiently manufactured an Ni—P plated substrate for a disk polished to have an excellent surface smoothness, in which the micropits are effectively reduced.

Abstract: Polishing slurry has abrading particles dispersed in a liquid dispersant. The abrading particles are composite particles each having a first particle and a plurality of second particles smaller than the first particles attached to the surface of the first particle through a metal oxide membrane. The first particles have average diameter of 0.1–20 ?m and the second particles have average diameter of 0.001–0.5 ?m. Elastic particles may be used as the first particles such as polymer particles.

Abstract: The present invention relates to a metal oxide powder for high precision polishing and prepartion thereof, comprising aggregates formed by cohesion of primary particles, which has a cohesive degree (?) of 1.1 to 2.0 and a cohesive scale (?) of 3 to 10, the cohesive degree (?) and the cohesive scale (?) being defined by formula (I) and formula (II), respectively: ?=6/(S×?×d(XRD)) ??(I) ?=weight average particle diameter/d(XRD) ??(II) wherein, S is the specific surface area of the powder; ?, the density; and d(XRD), the particle diameter of the powder determined by X-ray diffraction analysis. In accordance with the present invention, it is possible to provide a high polishing speed and reduce scratches.

Abstract: A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stabilizer. The composition can further include a medium containing the abrasive and an oxidizing agent (e.g., hydrogen peroxide), wherein the at least one catalyst is adapted to catalyze oxidation of a substrate by the oxidizing agent. Preferably, the abrasive is alumina, titania, zirconia, germania, silica, ceria and/or mixtures thereof, the stabilizer includes B, W and/or Al, and the catalyst is Cu, Fe, Mn, Ti, W and/or V. Both the stabilizer and the catalyst are immobilized on the abrasive surface. The method includes applying the composition to a substrate to be polished, such as substrates containing W, Cu and/or dielectrics.

Abstract: A tire dressing composition comprises a silicone emulsion system which polishes and protects tires, while at the same time imparting water repellency to the subject tires. In some embodiments, the tire dressing composition comprises a silicone microemulsion, a wetting agent, and optionally a fluorocarbon or hydrocarbon propellant when an aerosol system is used.

Abstract: A polishing composition of the present invention, which is used in polishing the edge of a wafer for semiconductor devices, effectively suppresses remaining amounts of abrasives on the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-soluble polymer, and water. The average primary particle diameter DSA of the silicon dioxide is at least 40 nm. The ratio D95/D5 of the silicon dioxide is no more than 3.8. The value D95/D5/DSA of the silicon dioxide is no more than 0.07.

Abstract: A multi-component kit and method is provided to pretreat, resurface, and restore a plastic material, and in particular, the plastic lens covers over the headlights and taillights of an automobile. The multi-component kit includes a pretreatment formulation, a resurfacing formulation, and a restoration formulation. Each formulation is structured for application to the plastic lens covers by hand, thereby eliminating the need for specialized equipment or training. The method includes application of each formulation to the plastic lens covers using clean, lint free applicators. The pretreatment formulation is applied to clean the plastic lens covers and to prepare them for application of the resurfacing formulation, which repairs scratches and removes discoloration. The restoration formulation is applied to restore a high gloss shine to the plastic lens covers as well as to protect the plastic lens covers from the elements such as dust, dirt, and/or ultra-violet radiation.

Abstract: A composition for chemical-mechanical polishing, comprising an aqueous solution and an abrasive that comprises polymer particles, is described. The polymer particles carry an electrical charge, such that nearby particles repel one another. Accordingly, aggregation of polymer particles may be reduced, minimized or eliminated. The composition may additionally comprise an oxidizing agent. A method of using the composition to polish a substrate surface, such as a substrate surface having a metal surface feature or layer, is also described. A substrate so polished may exhibit good surface characteristics, such as a relatively smooth surface or a reduced number of, or a lack of, microscratches on the surface of the substrate.

Abstract: An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001–20 w/w % of non-polymeric organic particles, 0.1–10 w/w % of an oxidizing agent, 0.05–10 w/w % of a chelating agent, 0.01–10 w/w % of a surfactant, and 0–10 w/w % of a passivation agent at a pH in the range of 2–12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

Abstract: The present invention relates to a CMP (chemical mechanical polishing) slurry composition and a method for planarizing a semiconductor device. The CMP composition comprises fumed silica, tetramethyl ammonium hydroxide, phosphates, fluorine compounds and deionized water. The method of planarizing comprises the steps of etching, subsequently laminating and polishing a semiconductor device by said CMP slurry composition.

Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the activator coated on the surface of the abrasive particles and the oxidizing agent, at the activator surface, to form free radicals. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.

Abstract: A method for evaluating the quality of abrasive grains for polishing glass, which comprises adding abrasive grains to be measured, to an aqueous medium having silica dissolved therein, to have the silica adsorbed on the abrasive grains under such a condition that the silica undergoes substantially no polymerization in the aqueous medium, followed by solid-liquid separation to separate the abrasive grains from the mother liquor, and measuring the concentration of silica remaining in the mother liquor to measure the adsorption rate (?) of silica on the abrasive grains.

Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a catalyst. The catalyst comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the catalyst coated on the surface of the abrasive particles and the oxidizing agent, at the catalyst surface. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.

Abstract: Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium.

Abstract: A polish composition includes a siloxane polymer of the formula wherein each group A independently represents an alkyl group having up to 6 carbon atoms, M represents an alkyl group having up to 6 carbon atoms and Q represents an alkyl group, wherein a proportion of the groups Q have more than 20 carbon atoms and the remainder have up to 6 carbon atoms, and wherein “x” is an integer selected to give a molecular weight of the polymer III in the range 3,000–30,000. In prior polish compositions the radical “Q” have been of shorter chain lengths. We have found that a longer chain length promotes reduced smearing.

Abstract: A single step rub-on, rub-off combination cleaning and waxing composition particularly suited for automobiles, glass, plastics, fiberglass, tile, and floor coverings.

Abstract: A mixed light rare earth compound which has been obtained by chemically removing medium-to-heavy rare earth elements, Nd and impurities other than rare earth elements from an ore containing rare earth elements is fired at 500 to 1100° C. to yield a mixed rare earth oxide. A cerium-based rare earth fluoride is added to the mixed rare earth oxide to obtain a mixture. The mixture is subjected to wet-pulverization, drying, firing, disintegration and classification to thereby yield a cerium-containing abrasive.

Abstract: The present invention provides a chemical metal polishing (CMP) method with improved flexibility and improved processing window, especially as it relates to the chemical aspect of CMP technology. Broadly speaking, the invention has two aspects: according to one aspect, the invention provides a new CMP composition, comprising as an oxidizer, at least one of inorganic halogen derivative and dissolved oxygen while in a second aspect the invention provides an improved method for polishing metals.

Abstract: Water based waxing mixtures for protecting surfaces providing ionically neutral ingredients adhering to the surface while repelling environmental impurities, such as dirt. Surface precleaning need not precede the wax application because of an exchange, which takes place between the mixture and surface dirt. The mixture constitutes an emulsion of an organic phase in an aqueous phase. The aqueous phase amounts to 70 percent to 92 percent by weight, while the organic phase provides the remainder of the mixture and contains suspended waxes. The organic phase includes natural waxes, silicone compounds, nonionic emulsifiers and suspending agents. The mixture may be applied to wet or dry surfaces in shade or bright sunlight and then wiped off to leave a durable shine. The compound finds use on painted, polished, or smooth texture surfaces such as on an automobile. Surfactants and suspending agents stabilize the phase ingredients to allow suspension of the wax in the water.

Abstract: Method of making abrasive compositions comprised of water-insoluble abrasive polishing agents suspended in an aqueous medium in combination, which avoids the need and associated cost of dry milling the abrasive particle content, and products thereof. In particular, the abrasive compositions made by the method contain appropriately sized abrasive particles provided without the need for drying or dry milling, while also providing an abrasive composition which is Theologically stable, settling-resistant, and re-agglomeration resistant, even during and after transport and/or storage before end-use, such as incorporation into dentifrice formulations or other oral cleaning compositions.

Abstract: A finish for application over an article of furniture includes an emulsion that if formed by blending together an oil-based furniture type of wax with a water based automotive type of wax. The furniture wax is limited to less than one-third the total volume. This results in a furniture finish that resists smudging, smearing, and dust collection and is also easy to apply and durable. A deep luster similar to that obtained by the use of a quality furniture wax is obtained without the disadvantages thereof.

Abstract: The present invention is based on the practice of abrasive machining with no sealed working chamber by the employment of a visco-elastic abrasive medium, behaving predominantly as an elastic solid at the applied strain of the orbital working motion, and applying orbital or other relative working motion to produce strain rates which bring the medium into a predominantly elastic deformation and often near, but not to exceed, the compressive stress limit at the strain rate employed. The preferred visco-elastic abrasive medium is a rheopectic poly(boro-siloxane) filled with viscosity increasing stiffening agents and high loadings of the abrasive of choice and relatively mono amounts of plasticizers.

Abstract: A polishing composition comprising an abrasive, an acid and/or a salt thereof, and water, wherein copper (Cu) is contained in an amount of 1 mg or less per kg of the polishing composition; a process for reducing a surface defect of a substrate comprising applying to a substrate or a polishing pad a polishing composition comprising an abrasive, an acid and/or a salt thereof, and water, wherein copper (Cu) is contained in an amount of 1 mg or less per kg of the polishing composition fed to the substrate or the polishing pad; and a process for manufacturing a substrate comprising a polishing step comprising applying to a substrate or a polishing pad the above polishing composition.

Abstract: An aqueous chemical mechanical polishing slurry is provided that comprises precipitated amorphous silica abrasive particles treated with acidic aluminum. Also provided is a method of polishing an electronic component substrate comprising the steps of: a) obtaining an electronic component substrate, the electronic component substrate having an insulating film deposited over it, an interconnection pattern formed in the insulating film, and interconnection material deposited on the insulated film and in the interconnection pattern; and b) polishing the interconnection material until a surface of said insulating film is exposed by using an aqueous chemical mechanical polishing slurry comprising: precipitated amorphous silica abrasive particles treated with acidic aluminum.

Abstract: Iodine or iodophor stain resistance is imparted to a surface by applying a hardenable coating composition containing an effective amount of a reducing agent having a redox potential sufficient to decolorize an iodine or iodophor stain. The reducing agent reacts with triiodide anion in the stain to change the stain coloration from a yellowish hue (e.g., yellow-white, yellow or brown) towards a lighter hue (e.g., pale yellow, white or transparent). This decolorization reaction takes place over a period of minutes, hours or days, and preferably can eventually cause the stain to disappear.

Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

Abstract: A polishing composition comprising an abrasive, water and an organic acid or a salt thereof, wherein the composition has a specified viscosity of from 1.0 to 2.0 mPa·s at a shearing rate of 1500 s?1 and 25° C.; a roll-off reducing agent comprising a Brönsted acid or a salt thereof, having an action of lowering viscosity so that the amount of viscosity lowered is 0.01 mPa·s or more, wherein the amount of viscosity lowered is expressed by the following equation: (Amount of Viscosity Lowered)=(Viscosity of Standard Polishing Composition)?(Viscosity of Roll-Off Reducing Agent-Containing Polishing Composition), wherein the standard polishing composition is prepared which comprises 20 parts by weight of an abrasive, said abrasive being high-purity alumina having Al2O3 purity of 98.

Abstract: The present invention provides a novel, structurally improved, abrasive agent, with improved surface properties resulting, inter alia, in enhanced wettability, dispersability and bonding. More specifically, the present invention provides according to an aspect thereof, an abrasive agent comprising abrasive particles, said particles being in the form of a composite material comprising more than one metal oxide material. In another aspect, the present invention provides an abrasive agent comprising metal oxide abrasive particles, said particles being coated at least partially with an extraneous metal or metal bearing layer.

Abstract: A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

Abstract: The present invention provides a cerium-based abrasive slurry particles including a cerium-based abrasive particle of no less than 95% by weight of total rare earth oxides (TREO), in which the cerium-based abrasive particle has less than 3% by weight of fluorine content of TREO, and a particle size distribution determined by a laser diffraction method is within a predetermined range. And adhesion property is further improved by setting this fluorine content in 0.005 to 0.5% by weight of TREO.

Abstract: There is provided an abrasive used for polishing a substrate which comprises silica as a main component, for example a rock crystal, a quartz glass for photomask, for CMP of an organic film, Inter Layer Dielectric (ILD) and shallow trench isolation of a semiconductor device, or for polishing a hard disk made of glass. A sol which particles are dispersed in a medium, wherein the particles have a particle size of 0.005 to 1 ?m and comprise as a main component crystalline cerium oxide of the cubic system and as an additional component a lanthanum compound, a neodymium compound or a combination thereof, wherein the additional component is contained in X/(Ce+X) molar ratio of 0.001 to 0.5 in which X is lanthanum atoms, neodymium atoms or a combination thereof.

Abstract: Pressurized mixtures of propellant gasses and liquid surface or air treating materials are disclosed. The liquid materials are in the form of a dispersion which is a biliquid foam with a thickener, where the foam is structured as an oil-in-water complex. The dispersion has an oil portion having a polysiloxane and/or a hydrocarbon oil. There is also surfactant such as one nonionic surfactant and one polar surfactant. Water is also provided.

Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Abstract: A polishing composition which comprises the following components (a) to (d): (a) silicon dioxide, (b) at least one basic substance selected from the group consisting of an inorganic salt of an alkali metal, an ammonium salt, piperazine and ethylenediamine, (c) at least one chelating agent selected from the group consisting of a compound represented by the following general formula [1] and its salt: wherein each of R1 and R2 which are the same or different, is a lower alkylene group, and n is an integer of from 0 to 4, and (d) water.

Abstract: There is provided a polishing composition that reduces erosion and is used in a final polishing step of a semiconductor device manufacturing process. The polishing composition contains colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water and its pH is 1.8 to 4.0.

Abstract: A cerium-based abrasive and a production method of the cerium-based abrasive excellent in polishing properties of a high polishing speed and scarce formation of polishing scratches are provided by keeping the color of the abrasive in specified ranges or stably making fluorine be contained in the abrasive. For example, as such a cerium-based abrasive, examples include a cerium-based abrasive containing cerium oxide as a main component and having an L* value in a range not lower than 65 and or lower 90, an a* value in a range 0 or higher but 15 or lower, and a b* value in a range 10 or higher but 30 or lower in the case the color is expressed by an L*a*b* color system.

Abstract: An object of the present invention is to provide a metal polishing composition which can polish a metal such as Cu and Ta at a high speed, has a higher efficiency of washing for a hydrophobic low dielectric constant film, and is excellent stability without precipitation of a polishing particle during storage (excellent in stability for storing). The object is achieved by a metal polishing composition comprising an anionic surfactant having 2 or more anionic functional groups in a molecule, a polishing abrasive, an inorganic salt, and water.

Abstract: A problem to be solved is to provide a slurry that is capable of flattening an uneven film on a substrate with good precision, and that has good stability, not separating into two layers, solidifying through flocculated settling or undergoing changes in viscosity. This problem is solved by adding poly ammonium acrylates having different degrees of neutralization to one another as surfactants to a cerium oxide slurry containing cerium oxide particles, and suitably adjusting the total amount of polyacrylates added.

Abstract: A polishing material is provided in which the dispersibility of the abrasive grains of the polishing material having, as a major component, rare earth oxides including cerium oxide is made better and the hardness of abrasive grain precipitates is reduced, and at the same time high efficiency of polishing can be achieved stably. According to the present invention, in a polishing material having, as the major component, rare earth oxides including cerium oxide, any one of crystalline cellulose, calcium secondary phosphate, a condensate of sodium &bgr;-naphthalenesulphonate and formalin, and synthetic silica is contained as an anti-solidification agent capable of softening abrasive grain precipitates of the polishing material when the abrasive grains of the polishing material are dispersed into a dispersion medium, and sodium hexametaphosphate or pyrophosphate is contained as a dispersant capable of dispersing the abrasive grains of the polishing material into the dispersion medium.

Abstract: Polishing rate selectivity is increased by providing a polyelectrolyte in the polishing slurry. The polishing selectivity of silicon oxide to silicon nitride is enhanced by using an anionic polyelectrolyte. The polishing selectivity of metals to silicon oxide, silicon nitride and/or silicon oxynitride is increased by using a cationic polyelectrolyte.