Abstract: In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.

Abstract: One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder.

Abstract: A magnetron sputtering electrode for use within a magnetron sputtering device that includes a cathode body, a target receiving area defined adjacent the cathode body, a plurality of magnets received within a magnet receiving chamber and an anode shield surrounding the cathode body. At least a portion of a coolant passageway is defined by the anode shield, whereby the coolant passageway is adapted to receive coolant to circulate therethrough thereby cooling the anode shield.

Abstract: There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.

Abstract: A combinatorial processing chamber having an integrated magnetic confinement system is described herein. The chamber comprises source magnetic confinement assemblies that are configured to shape ion beams produced by associated sputter sources. The chamber further comprises magnetic confinement assemblies that are configured to drive a combined ion beam onto an exposed surface of the substrate to combinatorial process regions of the substrate.

Abstract: A magnetron include a center plurality of magnets and an outer plurality of magnets arranged around the center plurality of magnets in a shape of two long sections and two shorter turnaround sections. The outer plurality of magnets are configured with at least one region of weaker magnetic field strength in at least one of the two long sections and adjacent to one of the two turnaround sections.

Abstract: A sputtering apparatus includes a template having cells. Removable inserts are disposed within the cells. The cells may be circular, triangular, square, diamond shaped, or hex shaped. The removable inserts may be magnetic or non-magnetic inserts. A cover is connected with a first side of the template. A yoke is connected with a second side of the template. The removable inserts are operable to customize or shape a magnetic field over a target. The yoke is operable to provide a return path for the magnetic field.

Abstract: In one aspect of the invention, a sputter source is provided. The sputter source includes a target source affixed to a bottom plate of the sputter source. A plurality of magnets spaced apart from each other is included. The plurality of magnets is disposed above a surface of the bottom plate, wherein a surface of the target source is profiled such that the target source has a minimum thickness aligned with an axis of each of the plurality of magnets and a maximum thickness aligned with an axis of a gap defined between each of the plurality of magnets. A method of processing a substrate is also included.

Abstract: A plurality of targets are disposed in parallel with, and at a given distance to, one another. In case a predetermined thin film is formed by sputtering, the occurrence of non-uniformity in the film thickness distribution and the film quality distribution can be restricted. During the time when electric power is charged to a plurality of targets (31a to 31h) which are disposed inside a sputtering chamber (11a) so as to lie opposite to the process substrate (S), and are disposed at a predetermined distance from, and in parallel with, one another, thereby forming a predetermined thin film by sputtering, each of the targets is reciprocated at a constant speed in parallel with the process substrate. Also, magnet assemblies that form tunnel-shaped magnetic flux (M) in front of each target are reciprocated at a constant speed in parallel with each of the targets.

Abstract: Provided is a thin film manufacturing method which is capable of reducing foreign matters to be adhered to a substrate in number while lowering the arcing count. The thin film manufacturing method involves placing a magnet unit (5) which includes a first magnet (51) and a second magnet (52). The first magnet (51) has a first polarity on its top face which is opposed to a target (94). The second magnet (52) has a second polarity on its top face and is arranged around the first magnet (51). The method also involves reducing a closest distance between an edge (52a) of the magnet unit (5) and an edge (94a) of the target (94) in a Y-direction as an amount of the target (94) used increases.

Abstract: Equipment for making IC shielding coating layer and a metal shielding layer of IC. The equipment comprises a base, a work support, a plurality of medium frequency magnetron targets and a plurality of multi-arc ion targets. The base comprises a chamber. The work support is disposed in the chamber and movably connected with a plurality of rotation axes. Each rotation axes comprises at least one fixture. The fixture is used to put at least one IC. Each medium frequency magnetron target and each multi-arc ion target are disposed in the chamber. The medium frequency magnetron targets and the multi-arc ion targets are used to sputter a metal material over the IC to form at least one metal shielding layer on a surface of the IC.

Abstract: A vacuum deposition system for forming a dense coating includes a substrate holder for holding a substrate having a substrate surface to be coated, a magnetic field generator, an optional electron source, an optional electron drain, and a deposition source. The magnetic field generator generates a magnetic field in which the substrate is at least partially immersed such that a component of the magnetic field is parallel to the substrate surface such that electrons are forced along a path that causes ionization in the vicinity of the substrate surface. The magnetic field strength at the substrate surface is between 5 and 1000 Gauss. The deposition source provides material to coat the substrate. The vacuum deposition system includes the optional electron source if the deposition source does not provide a source of electrons. A method for depositing a dense coating is also provided.

Abstract: The invention relates to an arc deposition device, comprising a cathode, an anode, as well as a voltage source for putting the anode at positive potential relative to the cathode. The device also comprises magnetic elements, which cause a magnetic field over the cathode surface, wherein the anode is arranged in the vicinity of the cathode in such a way that the magnetic field lines exiting from the cathode surface hit the anode.

Abstract: A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behinds the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. The movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge and trailing edge of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone.

Abstract: A magnetron sputtering apparatus where a target is disposed to face a substrate installed in a vacuum chamber and magnets are disposed on a rear surface of the target, including a power supply unit configured to apply a voltage to the target; and a magnet array body including a magnet group arranged on a base body provided at the rear surface of the target. In the magnet array body, rod-shaped magnets each having different polarities at opposite ends thereof are disposed in a mesh shape on a surface of the base body facing the target; the mesh has a 2n polygonal shape (n being an integer greater than or equal to 2); permeable core members are disposed at intersection points of the mesh surrounded by the ends of the rod-shaped magnets; and end portions of the rod-shaped magnets which surround each of the core members have a same polarity.

Abstract: An in-line film forming apparatus capable of conveying a carrier at a high speed, increasing the exhaust capability within a film forming chamber, and easily realizing a high vacuum degree in a short time is provided. A conveyor mechanism has a linear motor drive mechanism which drives the carrier in a noncontact state, a horizontal guide mechanism which is provided so as to be able to contact a side portion of the carrier, and guides the carrier driven by the linear motor drive mechanism in a horizontal direction, and a vertical guide mechanism which is provided so as to be able to contact a lower end of the carrier, and guides the carrier driven by the linear motor drive mechanism in the vertical direction.

Abstract: A magnetron sputtering apparatus in which a target is disposed to face a substrate includes a magnet array body including a magnet group arranged on a base body, and a rotating mechanism for rotating the magnet array body around an axis perpendicular to the substrate. In the magnet array body, N poles and S poles constituting the magnet group are arranged to be spaced from each other along a surface facing the target such that a plasma is generated based on a drift of electrons by a cusp magnetic field. Magnets located on the outermost periphery of the magnet group are arranged in a line to prevent the electrons from being released from constraint of the cusp magnetic field and jumping out of the cusp magnetic field. A distance between the target and the substrate during sputtering is equal to or less than 30 mm.

Abstract: A sputter deposition apparatus can sputter the entire sputtering surface of a target, and thereby increase the usage efficiency of the target and prevent arcing. An adhesion-preventing member, which surrounds the outer periphery of a sputtering surface of an electrically-conductive target 211, is formed by insulating ceramic. The target is sputtered in a reaction gas atmosphere while moving a magnet device between a position where the entire outer periphery of an outer peripheral magnet is on the inside of the outer periphery of the sputtering surface and a position where a part of the outer periphery of the outer peripheral magnet protrudes to the outside of the outer periphery of the sputtering surface. Since the entire sputtering surface of the target is sputtered, an insulating compound does not accumulate on the target and arcing does not occur.

Abstract: A medium frequency magnetron sputtering device comprises a vacuum chamber, a rotary rack located in the center of the vacuum chamber, a pair of targets located between the inner wall of the vacuum chamber and the rotary rack, an inner partition, and at least one outer partition. The inner partition is located between the inner wall of the vacuum chamber and the pair of targets, the at least one outer partition is moveable and prevents the deposition of any sputtered target atoms on the rotary rack during the cleaning target process.

Abstract: A magnet target comprising a fixing plate, a plurality of shafts arranged in an array, a plurality of connecting rods pivotably provided onto a plate surface of the fixing plate at one end and capable of rotating about corresponding one of the shafts, and a plurality of magnets that are each attached to the other fee end of one connecting rod. The magnets comprise magnets having external S poles and magnets having external N poles, and the magnets having external S poles and magnets having external N poles are arranged alternatively in an array.

Abstract: A magnetron sputtering device includes a base arranged adjacent to a sputtering target, and a plurality of movable magnet assemblies. Each movable magnet assembly includes a support fixed to the base, and a plurality of magnets that are connected to each other, arranged on the support and comprising opposing poles facing the base. Each movable magnet assembly also includes a driving device to drive the plurality of magnets to slide with respect to the support.

Abstract: A plasma lens for enhancing the quality and rate of sputter deposition onto a substrate is described herein. The plasma lens serves to focus positively charged ions onto the substrate while deflecting negatively charged ions, while at the same time due to the line of sight positioning of the lens, allowing for free passage of neutrals from the target to the substrate. The lens itself is formed of a wound coil of multiple turns, inside of which are deposed spaced lens electrodes which are electrically paired to impress an E field overtop the B field generated by the coil, the potential applied to the electrodes increasing from end to end towards the center of the lens, where the applied voltage is set to a high potential at the center electrodes as to produce a potential minimum on the axis of the lens.

Abstract: The present invention is to reduce the variation in axis of easy magnetization of a magnetic thin film with respect to a large diameter substrate. A plasma processing apparatus (1) includes: a substrate holder (11) that supports a substrate (10); a magnet holder (31) that is provided around the substrate holder and supports a magnet (30); a cathode unit (50) that is provided above the substrate, and applied with a discharge voltage; a rotating mechanism (20, 40) that is capable of rotating one or both of the substrate holder and the magnet holder along the planar direction of the process surface of the substrate; a rotational position sensor (25, 45) that detects the rotating positions of the substrate and the magnet; and a control device (60) that controls an operation of each operation element.

Abstract: There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.

Abstract: A sputtering device for depositing a deposition material from a deposition source to a deposition target, wherein a sputtering pressure between the deposition source and the deposition target is from about 6.70×10?2 Pa to about 1.34×10?1 Pa.

Abstract: A magnetron sputtering device includes a cathode source assembly, and a target assembly removably coupled to the cathode source assembly. The cathode source assembly comprises a rotatable drive shaft, and a water feed tube located in the drive shaft and coupled to a tube support. The target assembly comprises a rotary cathode including a rotatable target cylinder, the rotary cathode removably mounted to the drive shaft. A magnet bar inside of the target cylinder is coupled to an end portion of the feed tube. A sweeping mechanism coupled to the magnet bar includes a control motor. An indexing pulley is coupled to the control motor, and a magnet bar pulley is coupled to the indexing pulley. The magnet bar pulley is affixed to the tube support such that any motion of the magnet bar pulley is translated to the magnet bar through the tube support and the feed tube.

Abstract: A sputter device including a plurality of targets having magnetism; a reflector having magnetism and arranged between neighboring targets of the plurality of targets; a wave guide having magnetism and arranged adjacent the targets, the wave guide forming a guide space for guiding microwaves; and a limiter having magnetism and arranged adjacent the wave guide, the limiter forming an electron cyclotron resonance area together with the targets, the reflector, and the wave guide.

Abstract: Apparatus for coating a substrate with a material in a chamber subject, during use, to substantial evacuation, which includes a coating station within the chamber for coating a substrate by sputtering and/or by evaporation; at least one treating station disposed in serial with the coating station and equipped with a plasma treater incorporating a plasma generator in sufficient proximity to the substrate to treat the substrate; a magnetic device for generating a magnetic field; at least one cylindrical electrode surrounding the magnetic device, the plasma treater incorporates a device for rotating the electrode about its longitudinal axis.

Abstract: The arrangement and method for sputtering material onto a workpiece and cleaning a target of the sputtering chamber includes exposing a target to an electromagnetic field of a strength sufficient to remove particles from the target. The electromagnetic field is generated by an electromagnetic device that is positioned in proximity to the target and generates a strength greater than a strength of a cathode magnetic field behind the target to safely remove the contaminating particulates from the target, which may be made of a strong magnetic material.

Abstract: Disclosed is a vacuum deposition apparatus which suppresses mutual interference of magnetic fields generated by multiple magnetic-field applying mechanisms for evaporation sources. The vacuum deposition apparatus includes a deposition chamber; a magnetic-field applying mechanism of sputtering evaporation source disposed in the deposition chamber; a magnetic-field applying mechanism of arc evaporation source disposed in the same deposition chamber; and magnetic-field shielding units arranged so as to cover partially or entirely at least one of these magnetic-field applying mechanisms for evaporation sources (preferably the magnetic-field applying mechanism of sputtering evaporation source). Portions (portions to face a target material upon dosing) of openable units of magnetic-field shielding units are preferably made from a non-magnetic material.

Abstract: Disclosed invention uses a coaxial microwave antenna to enhance ionization in PVD or IPVD. The coaxial microwave antenna increases plasma density homogeneously adjacent to a sputtering cathode or target that is subjected to a power supply. The coaxial microwave source generates electromagnetic waves in a transverse electromagnetic (TEM) mode. The invention also uses a magnetron proximate the sputtering cathode or target to further enhance the sputtering. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency. The target comprises dielectric materials, metals, or semiconductors. The target also has a cross section being substantially symmetric about a central axis that the target rotates around. The target may have a substantially circular or annular a cross section.

Abstract: A physical vapor deposition (PVD) system includes a chamber and a plurality of electromagnetic coils arranged around the chamber. First and second annular bands of permanent magnets are arranged around the chamber with poles oriented perpendicular to a magnetic field imposed by the electromagnetic coils. Each of the permanent magnets in the first annular band is arranged with poles having a first polarity closest to a central axis of the chamber. Each of the permanent magnets in the second annular band is arranged anti-parallel with respect to the permanent magnets in the first annular band.

Abstract: The present invention provides a film forming method which can reduce deterioration of film thickness distribution even if the thickness of a film to be formed is extremely small while improving use efficiency of a target and a sputtering apparatus. A film forming method by a sputtering apparatus according to one embodiment of the present invention has a first step of fixing a magnet to a first position and performing film formation on a substrate on a substrate support surface, a second step of moving the magnet to a second position different from the first position after finishing the film formation on the substrate and then fixing it thereto, and a third step of performing film formation on the substrate on the substrate support surface by using the magnet fixed to the second position.

Abstract: According to the embodiment, a sputtering device and a sputtering method includes: a target of which a bottom surface is arranged so as to be opposed to a wafer substrate; a magnetic field forming portion which is arranged to be opposed to an upper surface of the target, and includes a magnet forming a magnetic field; a mechanism which changes a distance from a center point on a surface of the target opposed to the wafer substrate to a predetermined reference point of the magnetic field forming portion, while making the magnetic field forming portion go around the center point, with maintaining a spacing between the target and the magnetic field forming portion; and a wafer retaining portion which is capable of arranging the wafer substrate at a predetermined position.

Abstract: An apparatus and method are provided for improved utilization of a sputter target in the longitudinal end regions. The focus of erosion in the end regions is widened, thereby extending the useful life of the target. This provides improved efficiency and reduces waste because a greater proportion of the target material in the more expansive central region can be harvested, because the target is utilized for a longer period of time.

Abstract: A physical vapor deposition (PVD) system includes N coaxial coils arranged in a first plane parallel to a substrate-supporting surface of a pedestal in a chamber of a PVD system and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. Plasma is created in the chamber. A magnetic field well is created above a substrate by supplying N currents to the N coaxial coils, respectively, and M currents to the M coaxial coils, respectively. The N currents flow in a first direction in the N coaxial coils and the M second currents flow in a second direction in the M coaxial coils that is opposite to the first direction. A recessed feature on the substrate arranged on the pedestal is filled with a metal-containing material by PVD using at least one operation with high density plasma having a fractional ionization of metal greater than 30%.

Abstract: According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber.

Abstract: A steered arc physical vapor deposition (PVD) system includes an anode and a cathode. The cathode is a hollow cylindrical post cathode. A magnet is movably suspended within the cathode.

Abstract: A magnet array for a steered arc physical vapor deposition system has multiple magnets sandwiched between two pole plates.

Abstract: A magnetic field generating apparatus which generates a cusped magnetic field on an electrode includes a magnet mechanism which is attached to the electrode and includes a plurality of magnets held on a holding plate, and a rotation mechanism which rotates the holding plate. The plurality of magnets (61) are regularly arrayed to be point-symmetrical about a specific point. The specific point is at a position shifted from the center of rotation of the holding plate by the rotation mechanism.

Abstract: Nanoparticle deposition systems including one or more of: a hollow target of a material; at least one rotating magnet providing a magnetic field that controls movement of ions and crystallization of nanoparticles from released atoms; a nanoparticle collection device that collects crystallized nanoparticles on a substrate, wherein relative motion between the substrate and at least a target continuously expose new surface areas of the substrate to the crystallized nanoparticles; a hollow anode with a target at least partially inside the hollow anode; or a first nanoparticle source providing first nanoparticles of a first material and a second nanoparticle source providing second nanoparticles of a second material.

Abstract: In one embodiment, a magnetron assembly comprises a plurality of magnets and a yoke configured to hold the plurality of magnets in at least four independent linear arrays. The plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion. The outer portion substantially surrounds the perimeter of the inner portion. The magnets used to form the outer portion have a first polarity and the magnets used to form the inner portion having a second polarity. The outer portion of the pattern comprises a pair of elongated sections that are substantially parallel to one another. The outer portion of the pattern comprises a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections and wherein each turnaround section comprises a plurality of magnets having the first polarity. Other embodiments are described.

Abstract: A method and apparatus for forming a thermal barrier coating system in communication with at least a portion of at least one substrate. The method includes: depositing a first bond coat on at least a portion of at least one substrate; depositing a first thermal barrier coat disposed on the bond coat; whereby the deposition occurs in one or more chambers to form the thermal barrier coating system; and wherein the deposition of the first bond coat (or subsequent bond coats) and the deposition of the first thermal barrier coat (or subsequent thermal barrier coats) is performed without out-of chamber handling of the thermal barrier coating system.

Abstract: The invention relates to a method and apparatus for the application of material to form a layer of an organic electroluminescent device. The material is sputter deposited typically from at least one target of material held in respect to a magnetron in a coating chamber. The magnetrons used can be unbalanced magnetrons and/or are provided with other magnetrons and/or magnet arrays in a closed field configuration. The material is found to be deposited in a manner which prevents or minimises damage to the device and hence reduces or removes the need for a barrier layer to be applied.

Abstract: A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.

Abstract: It is an object of the present invention to provide a wiring board plasma processing apparatus capable of improving throughput and achieving reduction in running cost while a sputtering process is employed in manufacturing a wiring board. The wiring board plasma processing apparatus of the present invention has, in a same plasma processing chamber, a surface processing portion provided with a plasma source and performing a pretreatment of a board to be processed, and a plurality of sputtering film forming portions forming a seed layer formed of a plurality of films.

Abstract: A film forming method of forming a coating on a surface of an object to be processed includes disposing a target forming a base material of the coating and the object to be processed in a chamber so as to face each other, and generating a magnetic field through which a vertical line of magnetic force locally passes from a sputter surface of the target toward a surface to be film formed of the object to be processed at predetermined intervals; generating plasma in a space between the target and the object to be processed by introducing a sputter gas into the chamber, controlling a gas pressure in the chamber to a range of 0.3 Pa to 10.0 Pa, and applying a negative DC voltage to the target; and inducing and depositing the sputter particles on the object to be processed and forming the coating, while controlling flying direction of the sputter particles generated by sputtering the target.

Abstract: A rotary magnetron is provided with an end block for rotatably supporting a target on an axis of rotation. An elongate magnetic bar assembly is disposed within the target. A stator shaft is affixed in the end block; one end of the stator shaft is coupled to the elongate magnetic bar assembly to support the elongate magnetic bar assembly. The target has a target shaft extending over the stator shaft and rotatable thereon around the axis of rotation. The rotary magnetron is characterized by a rotating coolant seal disposed inside the target shaft proximate the one end of the stator shaft and proximate to the elongate magnetic bar assembly.

Abstract: A magnet unit for a magnetron sputtering system includes a base plate and a plurality of magnet parts each including a first magnet and a first supporting member. The first supporting member supports the first magnet and fixes the first magnet to the base plate. The magnet parts confine a plasma.

Abstract: A magnetron sputtering apparatus includes a cathode electrode having a first surface and a second surface opposite to the first surface, a target attachable to the first surface of the cathode electrode, and a magnet unit which is adjacent to the second surface of the cathode electrode and forms a magnetic field on the target surface. The magnet unit includes a plurality of magnet pieces each having a first magnet member which is magnetized in a direction perpendicular to the target and is arranged with a magnetic pole end face oriented toward the target, and a second magnet member which is magnetized opposite to the first magnet member in the direction perpendicular to the target and is arranged in contact with the first magnet member with a magnetic pole end face being oriented toward the target.