Abstract: A magnetron sputtering apparatus suitable for coating on a workpiece is provided. The magnetron sputtering apparatus includes a vacuum chamber, a holder, a magnetron plasma source and a high-power pulse power supply set, wherein the magnetron plasma source includes a base, a magnetron controller and a target. A reactive gas is inputted into the vacuum chamber, and the holder supporting the workpiece is disposed inside the vacuum chamber. The magnetron plasma source is disposed opposite to the workpiece, wherein the magnetron controller is disposed in the base, and the target is disposed on the base. The high-power pulse power supply set is coupled to the vacuum chamber, the magnetron plasma source and the holder, and a high voltage pulse power is inputted to the magnetron plasma source to generate plasma to coat a film on the surface of the workpiece.

Abstract: Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.

Abstract: Methods and devices for forming an ultra-thin doping layer in a semiconductor substrate include introducing a thin film of a dopant onto a surface of the substrate and driving at least a portion of the thin dopant layer into a surface of the semiconductor. Gas ions used in the driving-in process may be inert to minimize contamination during the drive in process. The thin films can be deposited using know methods, such as physical deposition and atomic layer deposition. The dopant layers can be driven into the surface of the semiconductor using known techniques, such as pulsed plasma discharge and ion beam. In some embodiments, a standard ion implanter can be retrofit to include a deposition source.

Abstract: A filtered cathodic arc device includes a plasma generating module which generates plasma using an arc discharge which has a cathode target as a deposition raw material; a deposition processing chamber in which a deposition receiving substrate is placed; a curved magnetic field duct that is placed between the plasma generating module and the deposition processing chamber, and that guides plasma generated by the plasma generating module to the deposition processing chamber with a magnetic field; a wool medium formed of a nonmagnetic metal fiber which covers the interior wall of the magnetic field duct; and a bias power source for the wool medium. The device balances reduction of particulate particles and a high deposition rate.

Abstract: A electromagnet array structure including multiple electromagnetic coils captured in a rigid encapsulant, for example, of cured epoxy resin, to form a unitary free-standing structure which can be placed around the walls of a plasma processing chamber. A liquid cooling coil may also be captured in the encapsulant between the electromagnetic coils. The structure may additionally include water fittings, locating pins, through tubes for chamber bolts, and lifting brackets.

Abstract: In a sputtering film forming method of the invention, a magnetron cathode with a magnet arranged on a back surface side of a target is used, a substrate is transported in a first direction on a front surface side of the target, and the magnet is moved in reciprocating motion in the first direction and a second direction which is opposite to the first direction, thereby performing sputtering film formation on the substrate. Sputtering film formation is performed where a speed of the movement of the magnet in the first direction and a speed of the movement of the magnet in the second direction are different from each other.

Abstract: A deposition system includes a drum for supporting a web substrate during deposition that defines a plurality of apertures in an outer surface for passing cooling gas. A gas manifold includes an input that is coupled to an output of a gas source and at least one output that is coupled to the plurality of apertures in the outer surface of the drum. The gas manifold provides gas to the plurality of apertures that flows between the outer surface of the drum and the web substrate, thereby increasing heat transfer from the web substrate to the drum. At least one deposition source is positioned so that material deposits on the web substrate.

Abstract: The apparatus includes a coating chamber, two or more cathodes which are arranged peripherally within the coating chamber, substrate carriers for holding the substrate, vacuum pumps and voltage sources wherein an individual anode is arranged centrally between the cathodes in the coating chamber and the substrate is positioned between the anode and the cathode. In each case a gas discharge with a plasma is ignited between the individual anode and the cathodes. The substrates are held fixed in position or are rotated about one or more axes and in the process subjected to the plasma.

Abstract: The present invention provides a portable, compact, metallizer for metallizing an article with a coating of metal. The metallizer includes a circular transport member having a plurality of cavities each for receiving an object to be metallized; wherein each cavity and object passes through a loading station and a metallization station. The transport member moves each of the cavities to a loading station for receiving the object and then to a metallization station for metallizing the object. Vacuum means are provided for creating a partial vacuum in one of the cavities at the loading station. A metallization unit is disposed at the metallization station having a magnetron for creating an electromagnetic field for energizing a source of gas. A source of metal is impacted by the energized gas to metallize the object in one of the cavities. A turbo pump is provided for creating a high vacuum in one of the cavities when it is at the metallization station.

Abstract: A plasma source includes a chamber for containing a feed gas. An anode is positioned in the chamber. A segmented magnetron cathode comprising a plurality of electrically isolated magnetron cathode segments is positioned in the chamber proximate to the anode. A power supply is electrically connected to an electrical input of a switch. A respective one of the plurality of electrical outputs of the switch is electrically connected to a respective one of the plurality of magnetron cathode segments. The power supply generates a train of voltage pulses that ignites a plasma from the feed gas. Individual voltage pulses in the train of voltage pulses are routed by the switch in a predetermined sequence to at least two of the plurality of magnetron cathode segments.

Abstract: A substrate stage that is arranged in a vacuum chamber and that has a substrate mounting surface on which a substrate is mounted, including a first magnetic field applying unit that applies a magnetic field to the substrate, in which the internal magnetization direction of the first magnetic field applying unit and the thickness direction of the substrate match.

Abstract: A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

Abstract: A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

Abstract: The invention relates to a sputtering cathode (1) for coating a substrate (6), which comprises a device (5) for generating an external magnetic field with substantially parallel magnetic field lines (8) substantially in the plane of the substrate. The invention further relates to a device and a method for coating a substrate with several layers, whereby several sputtering cathodes are disposed in a circle with their target effective areas pointing radially outward.

Abstract: A method and apparatus for performing physical vapor deposition on a large-area substrate is provided. One or more sputtering targets are disposed in a chamber, with each sputtering target comprising a magnet assembly. Each magnet assembly may comprise a plurality of magnet units aligned such that the magnetic polarity of the magnet units is complementary, and the magnetic fields of the magnet units couple. Each magnet unit thus comprises a plurality of magnets arranged such that the polarity of each magnet is opposite that of adjacent magnets in the same magnet unit. Alternately, each magnet assembly may comprise a plurality of magnets individually oriented to complement the magnetic fields of its neighbors. A substrate support having an insulating surface may also be provided.

Abstract: In the case of the treatment installation for the vacuum treatment, in particular vacuum coating, of a front side of substrates in strip form in a first process chamber with a first process roller and at least one process source and a second process chamber with a second process roller and at least one process source, it is provided that there is a transfer chamber which is arranged between the first and second process chambers, is coupled with both process chambers and can be separated in terms of pressure from at least one of the process chambers and an unwinding device with a removable unwinding reel and a winding-up device with a removable winding-up reel for the substrate to be treated as well as an outside air lock for loading and unloading the unwinding reel and/or winding-up reel.

Abstract: The present invention provides a magnetron co-sputtering device (6) comprising a main magnetron cathode (x) and a secondary cathode (Y) adapted to be associated with each other to sputter deposit a material on a substrate (2) arranged at a substrate position, the material comprising a first material derived from the main cathode (X) and a second material derived from the secondary cathode (Y), wherein the secondary cathode (Y) is arranged between the main cathode (X) and the substrate position, at a position selected from: (i) a position within a magnetic field derived from a main cathode (X) magnetic source, and (ii) a position within the footprint (6) of the main cathode (X).

Abstract: A magnet target comprising a fixing plate, a plurality of shafts arranged in an array, a plurality of connecting rods pivotably provided onto a plate surface of the fixing plate at one end and capable of rotating about corresponding one of the shafts, and a plurality of magnets that are each attached to the other fee end of one connecting rod. The magnets comprise magnets having external S poles and magnets having external N poles, and the magnets having external S poles and magnets having external N poles are arranged alternatively in an array.

Abstract: A magnetron sputtering cathode, comprising: a metal tube being hollow; and a plurality of magnet units, disposed inside the metal tube forming a plurality of sputtering zones on the surface of the metal tube, each of the sputtering zones corresponding to a substrate; wherein, each sputtering zone is provided with a magnetic tunnel and the magnetic tunnels are configured to communicate with each other to form a closed loop for guiding electrons to circulate therein. Thus, by the use of only one aforesaid magnetron sputtering cathode, multiple substrates can be coated at the same time, the waste related to plasma usage can be prevented to reduce power and target loss, and the same time that the probability of depositing the sputtered target on the portion of the sputtering chamber at the back of the magnetron sputtering cathode is reduced and thus the efficiency of the target is increased.

Abstract: A method of and system for pretreating the lumen of a catheter or small diameter tubing. A vacuum chamber includes a microwave port and a microwave supply subsystem including a microwave generator, and a circular polarizer produces circularly polarized microwaves propagated into the vacuum chamber via the port at a frequency which produces electron cyclotron resonance. A magnetic coil about the vacuum chamber generates a magnetic field in the vacuum chamber with magnetic field lines co-linear with the propagation direction of the microwaves. A catheter manifold positions at least one catheter in the vacuum chamber and supplies a gas within the catheter lumen to generate a plasma in the lumen for pretreating the same.

Abstract: An apparatus and method for controlling local deposition rate in a physical vapor deposition process is provided. A magnet bar assembly is disposed inside a sputtering target. The magnet bar assembly comprises a magnet bar, a support member aligned with the magnet bar, and one or more sliding brackets that couple the support member to the magnet bar. Each sliding bracket compresses the magnet bar to the support member, allowing the use of spacers between the support member and the magnet bar to adjust local proximity of the magnet bar to the plasma bombarding the target.

Abstract: An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.

Abstract: A processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate back and forth across an arc over their respective targets for uniform target erosion and uniform deposition on the wafers.

Abstract: A new and useful rotatable sputter magnetron assembly is provided, that addresses the issue of uneven wear of the target electrode tube. According to the principles of the present invention, a rotatable sputter magnetron assembly for use in magnetron sputtering target material onto a substrate comprises a. a longitudinally extending tubular shaped target electrode tube having a longitudinal central axis, b. the target electrode tube extending about a magnet bar that is configured to generate a plasma confining magnetic field adjacent the target electrode tube, c. the magnet bar being held substantially stationary within the target electrode tube, and d. the target electrode tube supported for rotation about its longitudinal central axis and for axial movement along its longitudinal central axis, so that wear of the target electrode tube can be controlled by moving the target electrode tube axially during magnetron sputtering of the target material.

Abstract: Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity.

Abstract: In the present invention, in forming a LaB6 thin film by magnetron sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film are improved. In one embodiment of the present invention, in a magnetron sputtering apparatus, parallel magnetic field strength on a surface of the substrate is set to 0.1 times or less parallel magnetic field strength on a surface of the target.

Abstract: A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.

Abstract: An arc plasma source 101 for evaporating a cathode material of a cathode 22 by arc discharge controlled by a magnetic field, comprising a magnetic field forming mechanism 42 arranged outside the cathode for forming a magnetic field M in parallel to the center axis of the cathode near an evaporation surface 22a; a supporting mechanism 26 for supporting the cathode; a cooling mechanism 61 for cooling the cathode; and a tapered ring 64 being truncated cone shaped and having a through-hole into which the cathode penetrates along the axial direction of the through-hole, the tapered ring being arranged to be tapered toward the evaporation surface of the cathode; wherein the tapered ring is made of a ferromagnetic material and the front end of the tapered ring is positioned coplanar with the evaporation surface of the cathode or is positioned posterior to the evaporation surface in use.

Abstract: In a PVD reactor having a sputter target at the ceiling, a conductive housing enclosing the rotating magnet assembly has a central port for the rotating magnet axle. A conductive hollow cylinder of the housing surrounds an external portion of the spindle. RF power is coupled to a radial RF connection rod extending radially from the hollow cylinder. DC power is coupled to another radial DC connection rod extending radially from the hollow cylinder.

Abstract: A system for depositing material on a substrate using plasma and a target. The target may include the material and/or a second material. The system may include a plasma source for providing the plasma. The system may also include a chamber for containing the substrate, the plasma, and the target during deposition of the material on the substrate. The system may also include a first magnet disposed above the chamber or disposed below the chamber for influencing distribution of the plasma inside the chamber. At least one of a bottom surface of the magnet and a top surface of the magnet is at an angle with respect to an imaginary axis of the plasma source. A circular cross section of the plasma source is symmetrical with respect to the imaginary axis of the plasma source. The angle is greater than 0 degree and less than 90 degrees.

Abstract: The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled.

Abstract: Apparatus for coating a substrate with a material in a chamber subject, during use, to substantial evacuation, which includes a coating station within the chamber for coating a substrate by sputtering and/or by evaporation; at least one treating station disposed in serial with the coating station and equipped with a plasma treater incorporating a plasma generator in sufficient proximity to the substrate to treat the substrate; a magnetic device for generating a magnetic field; at least one cylindrical electrode surrounding the magnetic device, the plasma treater incorporates a device for rotating the electrode about its longitudinal axis.

Abstract: A plasma processing system and method provide an internal coil in a vacuum chamber for maintaining a high density plasma therein in a manner that may have a less restrictive requirement on metal flux shielding than when the shield protects a dielectric window. The shield also shields the coil from plasma heat load. The coil need not be actively cooled. Some metal is allowed to pass through the shield and deposit on the coil. This leads to a thinner shield with less complicated slots than for shields in external coil configurations. Good RF transparency of the shield is a result of the much simpler shield shape. The coil is not sputtered and is thus not consumable. The coil is enclosed in a small conductive space, reducing its inductance, resulting in reduced coil current and voltage, in turn simplifying the design and construction of the tuning network and RF connectors. Stiffeners support the coil and are profiled to avoid formation of conductive paths forming from metal deposits.

Abstract: A dual magnetron for plasma sputtering in which two distinctly different magnetrons are mounted on a common plate rotating about a central axis in back of a target. At least one of the magnetrons is switched on and off by changes in chamber pressure or target power while the other magnetron, if it does switch, switches in complementary fashion. When the two magnetrons are mounted at different radii, the switching effects a effective movement of the magnetron such that different areas of the target are exposed to a sputtering plasma. In particular, a small unbalanced magnetron may scan the target edge to produce a highly ionized sputter flux and a larger magnetron positioned near the center can be switched on to clean sputter material redeposited on the target center.

Abstract: A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.

Abstract: A processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate back and forth across an arc over their respective targets for uniform target erosion and uniform deposition on the wafers.

Abstract: Magnetron source has a target configuration with a sputter surface, a magnet configuration generating above the sputter surface a magnetic field which forms, in top view onto the sputter surface, at least one magnet field loop. Viewed in a cross-sectional direction upon the target configuration, a tunnel-shaped arc magnet field is formed and further an electrode configuration is provided which generates, when supplied by a positive electric potential with respect to an electric potential applied to the target configuration, an electric field which crosses at an angle the magnetic field and wherein the electrode configuration comprises a distinct electrode arrangement in a limited segment area of the electrode configuration, which is substantially shorter than the overall length of the magnet field loop.

Abstract: Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

Abstract: A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

Abstract: In a magnetron sputtering apparatus an arrangement is made such that the peripheral portion of a target is uniformly eroded to attain a high efficiency in target utilization and, in addition, that an abnormal discharging hardly occurs to thereby enable satisfactory thin film forming. A magnet assembly is provided behind a target that is disposed opposite to the process substrate. This magnet assembly has a central magnet that is disposed linearly along the longitudinal direction, and a peripheral magnet that is disposed so as to enclose the periphery of the central magnet, while changing the polarity on the side of the target. At this time, among the respective magnetic fluxes generated between the central magnet and the peripheral magnet at the longitudinally end portions of the magnet assembly, the position at which the vertical component of the magnetic field becomes zero is locally shifted to the central magnet within a certain range.

Abstract: The present invention refers to a method of operating a coating chamber as well as a coating chamber comprising a coating source, a transport device for moving a substrate carrier adapted to be able to carry a substrate to be coated into at least one coating position with respect to the coating source, so that the substrate may be coated, and at least one first shield being arranged in an area between the coating position of the substrate and the coating source to prevent coating of areas other than the surface of the substrate to be coated, wherein the first shield comprises a moving apparatus and a coupling device for coupling the first shield and the substrate carrier, so that first shield and substrate carrier are movable together.

Abstract: A cylindrical magnetron sputtering apparatus includes a rotating cylindrical sputtering target, a non-rotating magnet structure within the cylindrical sputtering target and at least one non-rotating trim magnet adjacent an end of the magnet structure. The trim magnets are manipulated during operation of the apparatus to alter a magnetic field produced by the magnet structure within the cylindrical sputtering cathode. As a result the shape of a racetrack discharge plasma formed at an end of the sputtering target is altered such that the formation of an erosion groove is avoided.

Abstract: An end block for a magnetron device having a rotatable target comprises an end block housing having a pivot bearing. The end block housing is adapted on its outer side for attachment on a support unit, and the pivot bearing is adapted on an end that is accessible from outside the end block housing, for connection to the rotatable target. The end block housing is movably attached on the support unit. A vacuum coating apparatus has a vacuum chamber, a magnetron device situated in the vacuum chamber, and a rotatable target rotatably mounted on at least one such end block.

Abstract: A magnetic field generation control unit and a magnetron sputtering apparatus and method using the magnetic field generation control circuit. The magnetic field generation control unit includes a magnetic field generator for providing a specific magnetic field to a target consisting of a metal material to be deposited on a substrate, and a magnetic field generator control module electrically connected with the magnetic field generator, receiving an electrical signal from outside, and selectively supplying a current capable of generating the magnetic field to the magnetic field generator. The target is prevented from being magnetized when a sputtering process is not performed, and the magnetic field is generated from the target when the process is performed. Consequently, it is possible to perform uniform deposition on the substrate.

Abstract: A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed.

Abstract: A method of producing substrates with functional layers which have high optical properties and/or a high surface smoothness, in particular a low turbidity and significantly lower roughness, is provided. The method includes a sputtering process for coating a substrate with at least one functional layer, the sputtering process being interrupted at least once by the application of an intermediate layer with a thickness of less than 20 nm.

Abstract: The present invention refers to a coating device for depositing of barrier layers on a plastic substrate comprising a first coating station for depositing a first layer comprising a metal and a second coating station for depositing a second layer comprising a resin, wherein a treatment station for treating the deposited first layer is arranged between the first and the second coating stations which comprises sputter means for depositing one or several atomic layers or isles of deposition material. The invention further refers to an appropriate method which can be carried out by the coating device and to a layer system produced thereby.

Abstract: A sputtering apparatus includes a chamber for containing a feed gas. An anode is positioned inside the chamber. A cathode assembly comprising target material is positioned adjacent to an anode inside the chamber. A magnet is positioned adjacent to cathode assembly. A platen that supports a substrate is positioned adjacent to the cathode assembly. An output of the power supply is electrically connected to the cathode assembly. The power supply generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge from the feed gas that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train.

Abstract: A magnetron source for producing a magnetic field near a surface of a target in a deposition system include a first magnet, a second magnet separated by a gap from the first magnet along a first direction, and a target holder configured to hold the target in the gap between the first magnet and the second magnet. The target includes a sputtering surface from which target material can be sputtered and deposited on a substrate. The target holder is so configured that the sputtering surface is substantially parallel to the first direction and the first magnet and the second magnet can produce a magnetic field near a surface of the target.

Abstract: A capacitive-coupled magnetic neutral line plasma sputtering system having such a structure that the utilization efficiency of a target can be increased drastically by sputtering the target uniformly, distribution of magnetic lines of force is vertical and uniform in the vicinity of the substrate, and charge up does not take place. The capacitive-coupled magnetic neutral line plasma sputtering system comprises a vacuum chamber (1), a target (2) placed in the vacuum chamber (1), a magnetic field generation means forming annular magnetic neutral line of zero magnetic field in the vacuum chamber (1), and an electric field generation means for generating plasma along the magnetic neutral line by applying a high frequency bias to the target (2), wherein the gradient of magnetic field is set at 2 gauss/cm or above in the vicinity of zero magnetic field of the magnetic neutral line, and a film is deposited on the substrate placed oppositely to the target by sputtering the target with plasma.