Abstract: Certain example embodiments of this invention relate to techniques for sputter-depositing a thin film(s) including two or more materials using targets such as rotating cylindrical sputtering targets, including a method and apparatus. Magnet bar assemblies in first and second adjacent sputtering targets are oriented differently. The different orientations of the magnet bar assemblies allows material from the second target to be sputtered onto the first target, or vice versa. The mixture of material on the first target, including sputtering material from both the first and second targets, is then sputtered onto a substrate to form a sputter-deposited thin film that includes a mixture of the sputtering materials from the targets.

Abstract: A sputter target has a carrier body and a target material arranged on the carrier body, wherein the carrier body has a rear surface facing away from the target material and the target material has a front surface facing away from the carrier body. A ferromagnetic material is arranged between the front surface and the rear surface.

Abstract: A sputtering system includes a first sputtering assembly configured to sputter material onto a first disk and a second sputtering assembly configured to sputter material onto a second disk, the second sputtering assembly positioned proximate the first sputtering assembly. The first sputtering assembly includes a first magnetic ring, and the second sputtering assembly includes a second magnetic ring. The first magnetic ring includes a first region of lower relative magnetic strength positioned near the second magnetic ring, and the second magnetic ring includes a second region of lower relative magnetic strength positioned near the first magnetic ring.

Abstract: A sputtering apparatus for uniformly eroding a sputtering target is disclosed.

Abstract: The apparatus (1) for coating a substrate (14) by reactive sputtering comprises an axis (8), at least two targets (11,12) in an arrangement symmetrically to said axis (8) and a power supply connected to the targets (11,12), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate (14) by coating a substrate (14) by reactive sputtering in an apparatus (1) comprising an axis (8). The method comprises a) providing a substrate (14) to be coated; b) providing at least two targets (11,12) in an arrangement symmetrically to said axis (8); c) alternatively operating said targets (11,12) as cathode and anode during coating. Preferably, the targets (11,12) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

Abstract: A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.

Abstract: Described are an apparatus and a method for depositing a thin film on a web. The method includes depositing a first layer of a composite metal onto a web. A first selenium layer is deposited onto the first layer and the web is heated to selenize the first layer. Subsequently, a second layer of the composite metal is deposited onto the selenized first layer and a second selenium layer is deposited onto the second layer. The web is then heated to selenize the second layer. The composition of each composite metal layer can be varied to achieve desired bandgap gradients and other film properties. Segregation of gallium and indium is substantially reduced or eliminated because each incremental layer is selenized before the next incremental layer is deposited. The method can be implemented in production systems to deposit CIGS films on metal and plastic foils.

Abstract: A sputtering chamber contains a plurality of substantially triangular targets supported by a top wall. The targets have narrow ends pointing toward a center of the top wall. Above each target is a relatively small substantially triangular magnet. Each magnet is connected to a single central actuator that scans all magnets back and forth through an arc across its associated target. Each magnet is also movably connected to an arm connected to the central scanning actuator. A linear actuator moves each magnet up and down the arm simultaneously with the angular scanning movement. The combination of the simultaneous angular movement and linear movement (perpendicular to the arc) of the magnet causes each magnet to move only over a substantially triangular area corresponding to an area of an associated target. In one embodiment, the linear speed of the magnets is varied to achieve uniform erosion of the target.

Abstract: Disclosed is a method for the low cost manufacturing a plurality of rigid sputtered magnetic media disks of one or more sizes from a rigid sheet, in which one or more initial steps of preparing the media are performed while the media is in sheet form. The individual disks are then removed from the sheet, and final processing is performed individually on the disks.

Abstract: A vacuum pumping system and method in conjunction with a sputter reactor having a vacuum-pumped magnetron chamber sealed to the target backing plate. A main sputter chamber is vacuum sealed to the target front and cryo pumped. A bypass conduit and valve connect the magnetron and main chambers. A mechanical roughing pump connected to the magnetron chamber pumps the main chamber through the bypass conduit to less than 1 Torr before the bypass valve is closed and the cryo pump is opened and thereafter continues to pump the magnetron chamber to reduce the pressure differential across the target. A pressure differential switch connected across the bypass valve immediately open it whenever the pressure differential exceeds a limit, such as 20 Torr, for example when there is a leak or an electrical failure. The bypass conduit is also used in a venting procedure.

Abstract: The present invention is a device for controlling sputter coating deposition to at least one surface of at least one substrate. The device includes a magnetic structure having a plurality of electrically isolated and magnetically coupled magnetic pole piece structures. A plurality of magnetic concentric rings is mounted behind at least one target surface. A central upright common magnetic core connects the plurality of magnetic pole piece structures. A plurality of upright pole pieces arranged parallel to each other is attached to each of the magnetic pole piece structures and arranged at midpoints of the plurality of magnetic concentric rings. The magnetic structure includes a plurality of electromagnetic coils wound over the plurality of magnetic pole piece structures arranged to form sets of coils. The sets of coils can be energized in forward or reverse mode thereby impacting the target at a greater angle resulting in higher angle particle ejection.

Abstract: The invention is directed toward a method and apparatus which can be used to allow the sputter deposition of material onto at least one article to form a coating on the same. The new form of magnetron described herein allows an increase in sputter deposition rates to be achieved at higher powers and without causing damage to the coating being created. This can be achieved by improved cooling and use of a relatively high magnetic field in the magnetron while at the same time increasing the power to the magnetron by increasing the current at a rate faster than the voltage.

Abstract: An exemplary sputtering apparatus includes a chamber, a rotatable rack, a gate, two first magnetic elements, and a second magnetic element. A sidewall of the chamber has an opening defined therein. The rotatable rack is provided in a center of the chamber. The gate is provided in the opening. The two first magnetic elements are mounted on the gate. The second magnetic element is mounted inside the chamber. The second magnetic element neighbors one of the two first magnetic elements. A first angle is defined between two imaginary lines running from the rack to each of the two first magnetic elements. A second angle is defined between an imaginary line running from the rack to the second magnetic element and the imaginary line running from the rack to said one of the two first magnetic elements neighboring the second magnetic element. The first angle and the second angle are different.

Abstract: Apparatus for treating and/or coating the surface of substrate components by deposition from the gas phase. A plurality of substrate carriers and a plurality of coating and/or treating units are arranged in a deposition or treatment chamber which can be evacuated. The system can be equipped in a modular fashion such that the substrate components introduced into the system in a batch can be subjected to different treatments. Method for treating and/or coating the surface of substrate components. The procedure comprises: a) compiling coating and/or treating units and shielding elements from modules in the deposition or treatment chamber; b) equipping the substrate carriers with those substrate components that are to be subjected to the same treatment; c) closing the deposition or treatment chamber; and d) carrying out the individual treatment or coating programs for the substrate components combined in groups on the substrate carriers in one batch.

Abstract: A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller.

Abstract: The present invention provides a magnet unit and a magnetron sputtering apparatus which can suppress the consumption amount of a target by efficiently consuming the target and can easily cause erosion on the target to progress uniformly regardless whether the target size is small or large and whether the target is made of magnetic material or not.

Abstract: In a PVD reactor having a sputter target at the ceiling, a conductive housing enclosing the rotating magnet assembly has a central port for the rotating magnet axle. A conductive hollow cylinder of the housing surrounds an external portion of the spindle. RF power is coupled to a radial RF connection rod extending radially from the hollow cylinder. DC power is coupled to another radial DC connection rod extending radially from the hollow cylinder.

Abstract: Disclosed is an invention that uses a coaxial microwave antenna as a primary plasma source in PVD. The coaxial microwave antenna is positioned inside a sputtering target. Instead of using a cathode assist in sputtering, microwaves generated from the coaxial microwave antenna may leak through the sputtering target that comprises a dielectric material to form microwave plasma outside the sputtering target. To further enhance plasma density, a magnetron or a plurality of magnetrons may be added inside the target to help confine secondary electrons. An electric potential may be formed between adjacent magnetrons and may further enhance ionization. To achieve directional control of the generated microwaves, a shield that comprises a dielectric material or dielectric material coated metal may be added proximate the coaxial microwave antenna. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency.

Abstract: The system (1) for the continuous vacuum coating of a continuously suppliable material in web form (2) provided with feed means; at least one inlet chamber (4), wherein the transition between the inlet atmospheric pressure and the vacuum pressure of a coating chamber (5) incorporating at least one vacuum deposition module (6) for depositing metallic and/or dielectric components on the material in web form is carried out; at least one outlet chamber (7); and collecting means (8) which collect the coated material in web form. The system further comprises drive and support means (9), on which the material in web form is fixed for its transport and by one of its faces, which material follows a preferably straight path at least through the coating chamber.

Abstract: A sputtering system includes at least two treatment chambers, at least two antechambers, a gas withdrawal device, a placement device, a removal device, and a transport device. The antechambers and the treatment chambers are connected to each other alternatively to form a loop. Each of the treatment chambers includes arcing sources received therein. The arcing sources are configured for carrying target materials and ionizing the target materials by electronic arc. The gas withdrawal device is configured for vacuuming the treatment chambers and the antechambers. When working, the placement device places workpieces into the loop, the transport device transports the workpieces in the loop for undergoing continuously sputtering, the removal device removes the workpieces from the loop after the sputtering process is finished.

Abstract: When a film is formed by using a sputter method, distribution variation due to a progress of target erosion generated during the film formation is suppressed, and film thickness distribution and resistance value distribution are corrected to an optimal state. In order to maintain the magnetic flux density formed on the target surface at a constant level, the distance between the target surface and the magnet surface (MT distance) is corrected in accordance with the progress of the target erosion. Further, two or more MT distances are set by a process recipe or the like while forming a thin film, and different distribution shapes are combined to form a near flat distribution shape.

Abstract: A magnetron sputtering device includes a holding compartment, a target assembly, a supporting base, and a rotation module. The holding compartment is divided to a reactive chamber and a receiving chamber. The target assembly includes two cooling plates, two magnetic units, and a target. The two cooling plates define a magnetron room communicating with the receiving chamber. The two magnetic units are suspended in the magnetron room. The target is attached on the cooling plate under the magnetic units. The supporting base is for supporting work-pieces. The rotation module is received in the receiving chamber, and jointed to the two magnetic units. The rotation module drives the magnetic units to spin about a central axis thereof and move back and forth along a direction lengthwise of the magnetic unit.

Abstract: The invention relates to a rotatable sputter target and to a method to manufacture such a sputter target. The sputter target comprises a target material and a magnet array located at the interior of the target material. The magnet array defines a central zone extending along the major part of the length of the target material and defines an end zone at each end of the central zone. The target material comprises a first material and a second material. The target material comprises the first material at least on the central zone and comprises the second material at least on the end zones. The second material has a lower sputter deposition rate than the first material. The second material is preferably applied by thermal spraying. The first material comprises a first element and the second material comprises a compound of the first element of the first material.

Abstract: A sputter deposition apparatus and method, and a substrate holder for use with a sputter deposition apparatus is disclosed. According to one embodiment of the invention, a sputter deposition apparatus is provided, including at least one sputter target, a first plasma, a substrate holder, and a further plasma. In one embodiment, the further plasma is an ECWR plasma. According to an additional embodiment of the invention, an anode is provided between the further plasma, and the substrate holder. According to a further embodiment, the substrate holder includes a dielectric layer with varying thickness.

Abstract: A method for substrate processing includes producing a magnetic field by a magnetron across the full width of a sputtering surface of a target in a first direction. The magnetron can produce two erosion grooves separated by a distance S on the sputtering surface. The method includes moving the magnetron continuously at a first speed by the distance S in a first segment along a linear travel path. The linear travel path is along a second direction perpendicular to the first direction. The method includes continuously sputtering a material off the sputtering surface and depositing the material on the substrate during the first segment, and moving the magnetron by the distance S in a second segment along the linear travel path at a second speed higher than the first speed without sputtering the material off the sputtering surface or sputtering materials off at significant lower rate.

Abstract: Rotatable magnetron sputtering apparatuses are described for depositing material from a target while reducing premature burn through issues. The rotatable magnetron sputtering apparatus includes electric coils wound on pole pieces to modulate the magnetic fields at the ends of the magnetron magnetic assembly. Changing the direction of electric current moves the sputtering region alternately around its normal central position to decrease the rate of erosion depth at the ends of the target material.

Abstract: The invention relates to a device (10) for sputtering at least one selected materialonto a substrate (5) and bringing about a reaction of this material, comprising a vacuum chamber (11), in which a substrate holder (12) is arranged, at least one magnetron sputtering mechanism (15), which is arranged in a workstation close to the substrate holder (12) and which has a target of the selected material which is suitable for producing a first plasma for sputtering at least one material onto the substrate (5), as well as a secondary plasma mechanism (16) for producing a secondary plasma, which is arranged in the workstation close to the magnetron sputtering mechanism (15) and close to the substrate holder (12), the sputtering mechanism (15) and the secondary plasma mechanism (16) forming a sputtering zone and an activation zone.

Abstract: A magnetron plasma sputtering apparatus includes a sputtering chamber having a loading portion and an engaging portion opposite to the loading portion. A substrate is mounted to the loading portion. A target is mounted to the engaging portion. A sputtering space is defined between the loading portion and the engaging portion. A reference line extends through the loading portion, the sputtering space, and the engaging portion in sequence. A guiding coil surrounds the sputtering space with the reference line located in the center. A magnetron device is located at a side of the sputtering chamber adjacent to the engaging portion. The magnetron device has a magnetization side facing the engaging portion.

Abstract: A physical vapor deposition (PVD) system includes a chamber and a plurality of electromagnetic coils arranged around the chamber. First and second annular bands of permanent magnets are arranged around the chamber with poles oriented perpendicular to a magnetic field imposed by the electromagnetic coils. Each of the permanent magnets in the first annular band is arranged with poles having a first polarity closest to a central axis of the chamber. Each of the permanent magnets in the second annular band is arranged anti-parallel with respect to the permanent magnets in the first annular band.

Abstract: Disclosed is magnetron based metallization processing apparatuses. The apparatus comprises a magnetron which comprises at least one pole piece that is not a permanent magnet at least before the at least one pole piece is assembled in the magnetron assembly. The balance or unbalance ratio of magnetic strength between inner and outer pole pieces may be adjusted by a gap between inner or outer pole pieces and mounting plate. The apparatus may comprise a second magnet assembly that is used to modify the electromagnetic field created by the magnetron assembly for fabricating a semiconductor device. The second magnet assembly comprises electromagnet(s), permanent magnet(s), or ferrous materials. The apparatus may further comprise either DC, pulsed, or RF power supply for charging a sputtering target. The apparatus may comprise a plenum that is used to control the thermal behavior of the sputtering target and is separated from the magnetron assembly.

Abstract: Previous limitations in utilizing energetic vapor deposition means are addressed through the introduction of a novel means of vapor deposition, namely, an Electron-Assisted Deposition (EAD) process and apparatus. The EAD mode of film growth disclosed herein is generally achieved by, first, forming a magnetic field that possesses field lines that intersect electrically non-grounded first and second surfaces, wherein at least one surface is a workpiece, thereby forming a magnetic trap between first and second surfaces; second, introducing a high flux of electrons axially into the magnetic field existing between the first and second surfaces, so that the electrons form an electron-saturated space-charge in the space adjacent to the substrate, wherein plasma interactions with the substrate are substantially avoided, and modification of film growth processes is provided predominantly by electron—rather than plasma—bombardment.

Abstract: The present invention is to provide a sputtering apparatus and a sputtering method, specifically, a magnetron sputtering apparatus having a magnetron electrode capable of generating plasma in a wide region near the surface of a target, and a sputtering method using the apparatus. Thereby, a magnetic field shape enabling to generate plasma in a wide region near the surface of a target is realized, the use efficiency of the target material is increased, and dusts and abnormal electric discharges may be prevented. Magnetic circuit 10 of a magnetron electrode is set as “magnetic circuit 10 in which center perpendicular magnet 101, inside parallel magnet 103, outside parallel magnet 104, and perimeter perpendicular magnet 102 are arranged” from the central part of target 2 toward the perimeter part, and inside parallel magnet 103 is brought close to target 2.

Abstract: The present invention is to reduce the variation in axis of easy magnetization of a magnetic thin film with respect to a large diameter substrate. A plasma processing apparatus (1) includes: a substrate holder (11) that supports a substrate (10); a magnet holder (31) that is provided around the substrate holder and supports a magnet (30); a cathode unit (50) that is provided above the substrate, and applied with a discharge voltage; a rotating mechanism (20, 40) that is capable of rotating one or both of the substrate holder and the magnet holder along the planar direction of the process surface of the substrate; a rotational position sensor (25, 45) that detects the rotating positions of the substrate and the magnet; and a control device (60) that controls an operation of each operation element.

Abstract: A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder: a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron sputtering magnet has a strength equal to or higher than a predetermined level.

Abstract: A film forming method for an antireflection film that has a first indium oxide-based thin film and a second indium oxide-based thin film that is laminated on the first indium oxide-based thin film, including a first film forming step that forms the first indium oxide-based thin film by performing sputtering using a first indium oxide-based target in a first reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor; and a second film forming step that forms on the first indium oxide-based thin film the second indium oxide-based thin film by performing sputtering using a second indium oxide-based target in a second reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor, and that has a different composition from the first reactive gas.

Abstract: A magnetron source comprises a target (39) with a sputtering surface and a back surface. A magnet arrangement (30, 32, 19a, 19b) is drivingly moved along the backside of the target (39). A tunnel-shaped magnetron magnetic field is generated between an outer loop (30) and an inner loop (32) of the magnet arrangement. Elongated pivotable or rotatable permanent magnet arrangements (19a, 19b) of the magnet arrangement are provided in an interspace between the outer and inner loops (30, 32) of the overall arrangement.

Abstract: A magnetron sputtering electrode for use in a rotatable cylindrical magnetron sputtering device, the electrode including a cathode body defining a magnet receiving chamber and a cylindrical target surrounding the cathode body. The target is rotatable about the cathode body A magnet arrangement is received within the magnet receiving chamber, the magnet arrangement including a plurality of magnets. A shunt is secured to the cathode body and proximate to a side of the magnet arrangement, the shunt extending in a plane substantially parallel to the side of the magnet arrangement. A method of fine-tuning a magnetron sputtering electrode in a rotatable cylindrical magnetron sputtering device is also disclosed.

Abstract: A magnet assembly for a rotary cathode having a rotatable target cylinder is provided. The magnet assembly comprises a coolant tube configured to be positioned within the target cylinder, and a magnet bar configured to be positioned within the target cylinder and extending substantially parallel to the coolant tube. The magnet bar moves laterally with respect to the target cylinder in a synchronous manner with rotation of the target cylinder.

Abstract: A structure for increasing utilization rate of target is disclosed, which comprises: a magnetic base, capable of moving relative to a target in a reciprocating manner; and two magnetic conductors, disposed respectively at two motion limits with respect to the reciprocating range of the magnetic base. Thereby, when the magnetic base is moved to a position close to any one of magnetic conductors, the surface magnetic field intensity of the target that is caused by the magnetic base is reduced so that the ion bombardment happening at the two ends of the target will be eased off for increasing the utilization rate of the target.

Abstract: A magnetic field generating apparatus which generates a cusped magnetic field on an electrode includes a magnet mechanism which is attached to the electrode and includes a plurality of magnets held on a holding plate, and a rotation mechanism which rotates the holding plate. The plurality of magnets (61) are regularly arrayed to be point-symmetrical about a specific point. The specific point is at a position shifted from the center of rotation of the holding plate by the rotation mechanism.

Abstract: A magnetron sputtering apparatus of the invention includes: a sputtering chamber in which a target can be opposed to an object to be subjected to film formation; a gas introduction port facing the sputtering chamber; a magnet provided outside the sputtering chamber and opposite to the target and being rotatable about a rotation center which is eccentric with respect to center of the magnet; a sensor configured to detect a circumferential position of the magnet in a plane of rotation of the magnet; and a controller configured to start voltage application to the target to cause electrical discharge in the sputtering chamber on the basis of the circumferential position of the rotating magnet and gas pressure distribution in the sputtering chamber.

Abstract: The invention provides an arc coating apparatus having a steering magnetic field source comprising steering conductors (62, 64, 66, 68) disposed along the short sides (32c, 32d) of a rectangular target (32) behind the target, and a magnetic focusing system disposed along the long sides (32a, 32b) of the target (32) in front of the target which confines the flow of plasma between magnetic fields generated on opposite long sides (32a, 32b) of the target (32). The plasma focusing system can be used to deflect the plasma flow off of the working axis of the cathode. Each steering conductor (62, 64, 66, 68) can be controlled independently. In a further embodiment, electrically independent steering conductors (62, 64, 66, 68) are disposed along opposite long sides (32a, 32b) of the cathode plate (32), and by selectively varying a current through one conductor, the path of the arc spot shifts to widen the erosion corridor.

Abstract: A magnetic mirror plasma source includes a gap separating a substrate from a cathode. A mirror magnetic field extends between the substrate and the cathode through the gap. The magnetic field lines at a proximal surface of the substrate are at least two times as strong as those field lines entering the cathode. An anode is disposed such that a closed loop electron Hall current containment region is formed within the magnetic field.

Abstract: Previous limitations in utilizing energetic vapor deposition means are addressed through the introduction of a novel means of vapor deposition, namely, an Electron-Assisted Deposition (EAD) process and apparatus. The EAD mode of film growth disclosed herein is generally achieved by, first, forming a magnetic field that possesses field lines that intersect electrically non-grounded first and second surfaces, wherein at least one surface is a workpiece, thereby forming a magnetic trap between first and second surfaces; second, introducing a high flux of electrons axially into the magnetic field existing between the first and second surfaces, so that the electrons form an electron-saturated space-charge in the space adjacent to the substrate, wherein plasma interactions with the substrate are substantially avoided, and modification of film growth processes is provided predominantly by electron—rather than plasma—bombardment.

Abstract: A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 ?s.

Abstract: There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.

Abstract: Uniformity in a plasma process can be increased by increasing a plasma confining effect by a cusp magnetic field over the whole circumference. There is provided a plasma processing apparatus which performs a process on a substrate by generating plasma of a processing gas in a depressurized processing chamber. The apparatus includes a magnetic field generation unit 200 including two magnet rings 210 and 220 vertically spaced from each other and arranged along a circumferential direction of the processing chamber. Each of the magnet rings includes multiple segments 212 and 222 of which magnetic poles are alternately reversed two by two along a circumferential direction of an inner surface of the magnet ring. In the magnetic field generation unit 200, arrangement of upper and lower magnetic poles is changed by rotating the lower magnet ring 220 in a circumferential direction with respect to the upper magnet ring 210.

Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.

Abstract: A magnetron sputtering device includes a base arranged adjacent to a sputtering target, and a plurality of movable magnet assemblies. Each movable magnet assembly includes a support fixed to the base, and a plurality of magnets that are connected to each other, arranged on the support and comprising opposing poles facing the base. Each movable magnet assembly also includes a driving device to drive the plurality of magnets to slide with respect to the support.