Abstract: A magnetron sputter source for a sputter-coating installation includes a cathode and a target assigned to the cathode or formed as the cathode. The target provides coating and/or treatment material for the coating and/or treatment of a substrate. Furthermore, the magnetron sputtering source has means for generating a coating plasma and a magnet arrangement for generating a magnetic field for the purpose of influencing the coating plasma such that a plasma channel is generated above a partial section of a surface of the target. The magnet arrangement and the surface of the target are arranged such that they can be moved relative to each other, and the plasma channel is traversable above the surface of the target. The magnetron sputtering source is adjustable such that, when the plasma channel moves over the surface of the target, a duration of exposure of the surface to the plasma is reduced by an increase in a relative velocity (v, v+u) between the magnet arrangement and the target.

Abstract: A vacuum process system for surface-treating work pieces uses an arc evaporation source. The system has a first electrode connected to a DC power source and a second electrode, disposed separately from the arc evaporation source. The two electrodes are operated while being connected to a single pulsed power supply.

Abstract: A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other.

Abstract: A magnetron sputtering apparatus includes a target, a substrate holder, a magnetic field generator and a driving device. The substrate holder is arranged in front of the target. The magnetic field generator is arranged in back of the target. The driving device moves the magnetic field generator between a first position and a second position. The second position is closer to the target than the first position. The magnetic generator is arranged at the first position during a thin film formation. Repeated thin film formation may induce a sputtering particle to grow to be a lump on the target. If the lump is not removed from the target, the lump may fall on a substrate on the substrate holder. During cleaning of the target, the magnetic field generator is arranged at the second position and generates magnetic field to remove the lump from the target.

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

Abstract: A magnetron sputtering target assembly, comprises a target adapted to comprise of at least one material to be sputtered, the target including a pair of oppositely facing surfaces; and a magnet assembly comprising a plurality of Halbach magnet arrays adjacent one of the surfaces for providing magnetic field lines which emerge from and re-enter the other of the surfaces to form an arched, closed-loop magnetic field path over the other surface. The enhanced magnetic flux intensity provided by the Halbach magnet assemblies, relative to conventional magnetron magnet assemblies, facilitates sputtering of thick targets comprised of magnetic materials in the manufacture of recording media, as well as low pressure sputtering of high quality carbon-containing protective overcoat materials for such media.

Abstract: A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.

Abstract: A processing system includes a chamber. A plurality of processing stations in a center region in the chamber can be sequentially positioned when viewed in a first direction. The plurality of processing stations is configured to provide at least one processing step selected from the group consisting of thermal evaporation, thermal sublimation, sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), ion etching, or sputter etching. A plurality of substrates in the chamber can be sequentially positioned when viewed in the first direction. At least one of the plurality of substrate comprises a receiving surface configured to receive the at least one processing step from the plurality of processing stations.

Abstract: A magnetron sputtering apparatus has a controller for selectively releasing the spread of plasma on a substrate on a support. The controller can also contain the plasma when the substrate is to be coated with the target material. This enables cleaning of the target surface during intervals between deposition of target material onto a desired substrate, such as a wafer, and ensures that layers or flakes of back-scattered deposited target material do not build up on the target itself. A platen coil is located between the magnetron and the support to increase both uniformity and density of target material arriving nearly normal to the substrate surface.

Abstract: A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.

Abstract: A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.

Abstract: The present invention discloses a physical vapor deposition apparatus and a method for sputtering. When sputtering from a plurality of sputtering targets, a plurality of magnetrons may be used. The number of magnetrons may correspond to the number of targets. Each magnetron may be different to control the amount of material deposited from each sputtering target and the specific location on the sputtering target that is sputtered. The magnetrons may be spaced a different distance from the backing plate and hence, the target. The magnetrons may be of different sizes. The magnetrons may have a different magnetic path. The magnetrons may have a different pitch. The magnetrons may have a different magnitude. By tailoring the distance, size, path, pitch, and magnitude, uniform sputtering and target erosion may be achieved.

Abstract: A physical vapor deposition (PVD) apparatus and a PVD method are disclosed. Extending an anode across the processing space between the target and the substrate may increase deposition uniformity on a substrate. The anode provides a path to ground for electrons that are excited in the plasma and may uniformly distribute the electrons within the plasma across the processing space rather than collect at the chamber walls. The uniform distribution of the electrons within the plasma may create a uniform deposition of material on the substrate. The anodes may be cooled with a cooling fluid to control the temperature of the anodes and reduce flaking. The anodes may be disposed across the process space perpendicular to the long side of a magnetron that may scan in two dimensions across the back of the sputtering target. The scanning magnetron may reduce localized heating of the anode.

Abstract: The present invention provides a magnetron cathode comprising a circular inner target and an outer target provided outside said inner target and concentrically to said inner target, wherein an outer magnet unit positioned behind said outer target, immovable against a back panel portion for outer target holding said outer target, and comprising an magnet group for outer target and an outer yoke on which said magnet group for outer target is fixed, an inner magnet unit positioned behind said inner target, provided movably and rotatably on a back panel portion for inner target, and comprising an magnet group for inner target and an inner yoke on which said magnet group for inner target is fixed, a movement control means for moving said inner magnet unit to said inner target; and a rotation control means for rotating said inner magnet unit to said inner target are provided, so that improvement of distribution and uniformity of erosion of the targets are achieved and further increase of availability and life of th

Abstract: A magnetic dipole ring assembly positioned inside a vacuum chamber and around a wafer being sputter deposited with a ferromagnetic material such as NiFe or other magnetic materials so that the material is deposited with a predetermined magnetization direction in the plane of the wafer. The magnetic dipole ring may include 8 or more arc-shaped magnet segments arranged in a circle with the respective magnetization directions precessing by 720° around the ring. The dipole ring is preferably encapsulated in a vacuum-tight stainless steel carrier and placed inside the vacuum chamber. The carrier may be detachably mounted on a cover ring, on the shield, or on the interior of the chamber sidewall. In another embodiment, the magnet is a magnetic disk placed under the wafer. Such auxiliary magnets allow the magnetron sputter deposition of aligned magnetic layers.

Abstract: An apparatus and method for sputter depositing a magnetic film on a substrate to produce a magnetic device such as magnetic recording heads for reading digital information from a storage medium. The apparatus of the invention includes a sputtering chamber containing a target and a substrate, and a magnet array disposed within the chamber to form a substantially parallel magnetic field at a surface of the substrate. The sputtering chamber reduces interference between the magnetron and the magnet array by providing a long throw distance and/or a grounded collimator. The magnet array is preferably a circular ring.

Abstract: The present invention relates a physical vapor deposition (PVD) system. e.g. a planetary system, for forming one or more layers of a coating material on a substrate and for treating, or modifying, the substrate surface, which can include the surface of the substrate or a deposited layer of coating material thereon. The PVD system includes a single vacuum (or process) chamber having an ion source and at least one PVD source of the coating material. The ion source, such as a linear ion source, is configured to emit a beam of energetic particles at a substrate for surface modification of the substrate surface, for example, to provide film densification, etching, cleaning, surface smoothing, and/or oxidation thereof. The PVD source(s) of the coating material deposits one or more layers of coating material(s) on the substrate.

Abstract: A device (1) for amplifying the current of an abnormal electrical discharge, characterized in that it comprises an electrode which is positively polarized (2) and associated with a magnetic circuit (3) producing a magnetic field (4) which is uniformly divergent, whereby the intensity on the surface of the electrode is more than approximately 6.102 Tesla, the electrode being positioned in the region where the magnetic field is at its most intense.

Abstract: A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, wherein one magnet unit is disposed around the outer circumference of another magnet unit and adjacent magnet units have opposite poles facing toward the same direction. Uniform magnetic field distribution is obtained. Therefore, the erosion profile of a target is wide and uniform.

Abstract: One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.

Abstract: In a sputtering apparatus, target particles to be deposited onto a substrate are selectively ionized relative to other particles in the deposition chamber. For example, titanium or titanium-containing target particles are selectively ionized, while inert particles, such as argon atoms, remain substantially unaffected. Advantageously, one or more optical ionizers, such as lasers, are used to create one or more ionization zones within the deposition chamber in which such selective ionization takes place.

Abstract: The ion source apparatus of the present invention includes at least one pair of antenna-opposed magnets sandwiching an antenna element and moveable to magnetic element and the antenna element both in horizontal and vertical directions in a plasma chamber, and a control means performing a positional adjustment over the antenna-opposed magnets to the antenna element in the plasma chamber. An electrons-generated region of high-concentration is formed around the antenna element through electric fields based on outputs of the antenna element and magnetic fields of the antenna-opposed magnets crossing the antenna element.

Abstract: Provided is a method of forming ferromagnetic sputter targets and sputter target assemblies having a uniform distribution of magnetic leakage flux. The method includes providing a ferromagnetic sputter workpiece and hot rolling the workpiece to a substantially circular configuration sputter target; machining a taper in a surface of the sputter target to have a thickness gradient of the sputter target, where the center of the sputter target is about 0.020 to about 0.005 inches thinner than the edge of the sputter target, and where the magnetic leakage flux across the sputter target is uniformly distributed.

Abstract: There is disclosed a dual magnetron sputtering apparatus that is comprised of a balancing circuit connected to the output of an ac power source that supplies ac power to at least two target materials such that the balancing circuit allows the power supply to deliver equal power to each target material. In those applications where there may be an erosion of one target material faster than the other, the balancing circuit allows the power supply to deliberately unbalance the power to at least one of the target materials to reduce power to the target to compensate for faster erosion of the target.

Abstract: A facing targets sputtering device for semiconductor fabrication includes an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween; a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates; a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; and a back-bias power supply coupled to the substrate holder.

Abstract: Anode with a 2450 MHz resonance frequency, and magnetron therewith, the anode including a cylindrical anode body with an inside diameter in a range of 32.5 to 34.0 mm, a total of ten vanes fitted to an inside circumferential surface of the anode body in a radial direction, and an inner strap and an outer strap provided to both of an upper surface and a lower surface of each vane, a distance of the inner strap and the outer strap being in a range of 0.8 to 1.2 mm, and each of the inner strap and outer strap being in contact with every second vanes for electrical connection of the vanes alternately. The anode body and the vanes are formed as one unit for simplification of a fabrication process.

Abstract: Techniques for producing and manipulating magnetic fields. The techniques employ the mutual repulsion of magnetic fields to create uniform magnetic fields and to manipulate the uniform magnetic fields. The uniform magnetic field is created between two planar magnets. The planar magnets have cores which describe a closed curve. Like poles of the electromagnets are connected by the cores. When the electromagnets are activated, repulsion between the magnetic fields generated by the electromagnets creates a magnetic field which extends above and below the planes of the planar magnets. If the planar magnets are positioned parallel to each other and aligned so that the magnetic fields generated by the planar magnets repel each other in the space between the planar magnets, the repulsion between the fields generates a resultant field.

Abstract: A high frequency plasma source includes a support element, on which a magnetic field coil arrangement, a gas distribution system and a unit for extraction of a plasma beam are arranged. Additionally a high frequency matching network is arranged within the plasma source.

Abstract: A method for forming a conductive region on a first portion of a substrate, the method being constituted by exposing the first portion to a filtered beam of substantially fully ionised metallic ions under a pulsed, modulated electrical bias. The method uses FCVA (Filtered Cathodic Vacuum Arc) techniques to generate the filtered ion beam and permits the formation of a conformal metal coating, even in high aspect ratio visa and trenches. The method also permits the in-filling of vias and trenches to form conductive interconnects. Particular examples concern the deposition of copper ions. An adapted FCVA apparatus deposits metals on substrates. A control apparatus controls ion beams impacting upon substrates, the control apparatus being suitable for incorporation within existing filtered ion beam sources.

Abstract: An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber.

Abstract: A sputtering chamber system and method uses at least one sputtering source with a new sputter surface at least approximately symmetrical with respect to a central axis. A substrate carrier is arranged to be drivingly rotatable about a substrate carrier axis. The central axis and the substrate carrier axis are oblique with respect to one another, and the sputtering source is a magnetron sputtering source. The new sputter surface is substantially rotationally symmetrical with respect to the central axis, with the central axis and the substrate carrier axis intersecting at least approximately. With respect to an angle ? between the central axis and the substrate carrier axis, 30°???60°, preferably 40°???55°, particularly preferably 43°???50°, particularly ??45°.

Abstract: Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic fi

Abstract: Sputtering particles emitted from a target are ionized by the Penning ionization process. And the sputtering particles ionized are caused to fly in the direction of the substrate by a magnetic field formed by ambipolar diffusion due to a magnetic field generating means without scattering the particles to deposit the particles on the substrate. The partial pressure of a sputtering discharge gas in a discharge space is set to 1.3 Pa or less and a distance from the target to an ionization space is within twice the mean free path of the partial pressure of the sputtering discharge gas.

Abstract: A method of depositing lithium phosphorus oxynitride on a substrate, the method comprising loading a substrate into a vacuum chamber having a target comprising lithium phosphate, introducing a process gas comprising nitrogen into the chamber and maintaining the gas at a pressure of less than about 15 mTorr; and forming a plasma of the process gas in the chamber to deposit lithium phosphorous oxynitride on the substrate.

Abstract: A magnet assembly for producing a varying magnetic field is provided wherein a plurality of permanent magnets are interposed between two members which are constructed of a ferromagnetic material. Each of the magnets is rotatable and has a north and south magnetic pole. Each of the magnets is disposed so that the north magnetic poles of the plurality of permanent magnets have a common magnetic orientation with respect to the first member. An orienter, such as, for example, a ring gear and pinion arrangement, is coupled to the magnets to change their common magnetic orientation with respect to the first member. The magnetic field projected by the assembly varies as a function of the orientation of the magnets.

Abstract: A small unbalanced magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly may pass through the target center, thus allowing full target coverage. A geared planetary mechanism may include a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plate supporting a cantilevered magnet assembly on the side of the drive plate facing the target. The erosion profile may be controlled by varying the rotation rate through the rotation cycle or by modulating the target power. A second planetary stage may be added or non-circular gears be used. Auxiliary electromagnetic coils may create a focusing magnetic field.

Abstract: Methods and apparatuses for shielding magnetic flux which is associated with a semiconductor fabrication system are provided. A magnetic shield assembly substantially surrounds a side wall of a plasma reactor. The shield assembly comprises a passive shield member in combination with an active shield member. As a result, effective shielding of magnetic flux can occur without excessive distortion of the magnetic field line pattern in the plasma region of the plasma reactor. In one aspect, the shield assembly comprises a first shield member adapted to attenuate a magnetic flux density. The first shield member is disposed in a parallel, spaced apart relationship from the side wall. A second member is attached to the first shield member and is constructed of a ferromagnetic material which is permanently magnetized.

Abstract: A system for sputtering uniformly thick films on a substrate is disclosed. The system includes a magnetron-sputtering cathode in a vacuum chamber, a gas inlet which injects processing gas at one end of the chamber, and a pump that pumps the processing gas from the other end of the chamber causing the process gas to flow across the substrate during processing. The magnetron-sputtering cathode includes a magnet array that is substantially circular. The magnets on the magnet array are positioned such that the gap between the magnets is smaller on the top of the array near the gas inlet than on the bottom of the array near the pump. The distribution of magnets creates a magnetic flux profile that results in more of the target being sputtered near the top of the cathode creating a thicker film at the top of the substrate.

Abstract: An apparatus for film deposition onto a substrate from a source of target particles including a plasma generator creating a plasma that isotropically accelerates the target particles towards the substrate. A secondary ionizer creates a secondary ionization zone between the plasma and the substrate support. The isotropically accelerated target particles are ionized as they pass through the secondary ionization zone. A static field generator creates a static field between the secondary ionization zone and the substrate accelerating the ionized target particles along a substantially collimated trajectory perpendicular to the substrate. Optionally, a collimator is included between the secondary ionization zone and the substrate and biased to focus and accelerate the collimated target particles.

Abstract: A magnetron with mechanisms for smoothly and continuously adjusting a DC power applied to its targets to compensate for the changes in the sputtering characteristics of the targets that occur with target aging. A magnetron according to the present teachings includes a set of concentric targets for sputtering a film onto a wafer in response to an AC power and a DC power applied to the targets and a power controller that adjusts the DC power. The adjustments to the DC power enable the magnetron to maintain uniformity in the thicknesses of films formed with the magnetron throughout the life of its targets.

Abstract: In a sputtering apparatus, target particles to be deposited onto a substrate are selectively ionized relative to other particles in the deposition chamber. For example, titanium or titanium-containing target particles are selectively ionized, while inert particles, such as argon atoms, remain substantially unaffected. Advantageously, one or more optical ionizers, such as lasers, are used to create one or more ionization zones within the deposition chamber in which such selective ionization takes place.

Abstract: A sputtering apparatus is provided. The sputtering apparatus comprises cooling water system having a temperature-controlling device for controlling the temperature of the sidewalls of the reaction chamber. During the deposition process of titanium/titanium nitride, the sidewall temperature of the chamber is controlled at about 50° C.˜70° C. for reducing the difference of temperature distribution in the chamber so that the reaction temperature within the reaction chamber can be rendered substantially uniform.

Abstract: Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.

Abstract: A sputtering magnetron arrangement is disclosed, comprising a magnetic field generator (1) and a target (4) which is associated with said magnetic field generator (1). The magnetic field generator (1) includes a magnetically active element (5-9) and an adjusting means (20-25) which is adapted to deform or deflect locally the magnetically active element (5-9) so as to alter with respect to the target (4) the position of at least a portion of the magnetic field generator (1).

Abstract: An arrangement and method orients the magnetization direction of magnetic layers on a plate shaped substrate on a mounting. The mounting defines a positioning plane for the substrate and a magnet arrangement is on one side of the positioning plane. The magnet arrangement has at least three electromagnets whose dipole axes are at least approximately parallel to the positioning plane and, viewed perpendicularly to the positioning plane, define a closed surface.

Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.

Abstract: The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10) is positioned proximal to at least one of the electrodes (11, 12) and is moved relative to the plasma, the substrate (10) is plasma treated, coated or otherwise modified depending upon the process gas used and the process pressure. This confinement arrangement produces dramatic results not resembling known prior art. Using this new source, many applications for PECVD, plasma etching, plasma treating, sputtering or other plasma processes will be substantial improved or made possible. In particular, applications using flexible webs (10) are benefited.

Abstract: When a substrate 30 is to be subjected to a magnetron plasma process, a dipole ring magnet 21 is provided, in which a large number of anisotropic segment magnets 22 are arranged in a ring-like shape around the outer wall of a chamber 1. A magnetic field gradient, wherein the magnetic field strength decreases from the E pole side toward the W pole side in a direction perpendicular to a magnetic field direction B, is formed in a plane perpendicular to the direction of an electric field between a pair of electrodes separated from each other. The anisotropic segment magnets have a first section a including anisotropic segment magnets arranged in the vicinity of a region A located outside an E pole side end of the process substrate with an N pole thereof being directed toward this region, and a second portion b including anisotropic segment magnets arranged with an S pole thereof being directed toward this region, to locally increase the magnetic field strengths of the first and second regions.

Abstract: A magnetic field generator for confining plasma within a vacuum chamber is disclosed. The magnetic field generator produces a multi-pole magnetic field around a workpiece positioned within the vacuum chamber. The magnetic field generator is provided outside the vacuum chamber and comprises a plurality of segment type permanent magnets circularly arranged. The magnetic field generator further comprises a plurality of magnetic members to which the segment type permanent magnets are selectively attached.