Abstract: A method for horizontally electroplating or electro deposition a thin film on a substrate comprises the steps of transferring and positioning a substrate on a substrate supporter; the substrate being positioned approximately horizontally; moving a plurality of stop plates to enclose horizontal edges of the substrate so as to form with an enclosure around an edge of the substrate; moving a first electrode to be in contact with a portion of the substrate; the portion being a non-wired area; moving a second electrode to be above and not in contact with the substrate; wherein the second electrode has a polarity opposite to that of the first electrode; and filling electroplating liquid into the enclosure formed by the stop plates so as to be in contact with the second electrode above the substrate for electroplating or electro deposition.

Abstract: A multi-layered wafer support apparatus is provided for performing an electroplating process on a semiconductor wafer (“wafer”). The multi-layered wafer support apparatus includes a bottom film layer and a top film layer. The bottom film layer includes a wafer placement area and a sacrificial anode surrounding the wafer placement area. The top film layer is defined to be placed over the bottom film layer. The top film layer includes an open region to be positioned over a surface of the wafer to be processed, i.e., electroplated. The top film layer provides a liquid seal between the top film layer and the wafer, about a periphery of the open region. The top film layer further includes first and second electrical circuits that are each defined to electrically contact a peripheral top surface of the wafer at diametrically opposed locations about the wafer.

Abstract: The invention relates generally to electrodeposition apparatus and methods. The invention finds particular use in fabricating thin film solar cells. Electrodeposition is improved by using a continuous thin film flow of electrodeposition solution between a substrate and a counter electrode, positioned in close proximity to each other, while the plating current is applied. Apparatus for carrying out methods described herein are highlighted particularly by flow manifolds that allow electrodeposition in the manner described.

Abstract: A method of fabricating an energy storage device with a large surface area electrode comprises: providing an electrically conductive substrate; depositing a semiconductor layer on the electrically conductive substrate, the semiconductor layer being a first electrode; anodizing the semiconductor layer, wherein the anodization forms pores in the semiconductor layer, increasing the surface area of the first electrode; after the anodization, providing an electrolyte and a second electrode to form the energy storage device. The substrate may be a continuous film and the electrode of the energy storage device may be fabricated using linear processing tools. The semiconductor may be silicon and the deposition tool may be a thermal spray tool. Furthermore, the semiconductor layer may be amorphous. The energy storage device may be rolled into a cylindrical shape. The energy storage device may be a battery, a capacitor or an ultracapacitor.

Abstract: A high quality, highly adherent layer of a metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. The substrate is activated prior to the electro deposition of the metal and oxygen material thereonto by contacting it with a multidentate activating agent which promotes the adhesion of the metal and oxygen material to the substrate. Use of the activation agent eliminates the need to pre-deposit a “seed” layer of the metal and oxygen material onto the substrate by a vacuum deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device In particular instances the activation method may be implemented in a continuous, roll-to-roll process.

Abstract: A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.

Abstract: Two rotating members placed to face each other and nipping a web such that only an end of the web provided with conductivity is pressed are provided, at least one of the rotating members serves as a feeding electrode, and these rotating members are rotated about the same velocity, to a transportation velocity of the web.

Abstract: An improved plating system comprises a plurality of non-electrically conductive shields forming an elongated upper channel and an elongated lower channel, the upper and lower channels each having a width less than or equal to one inch; a plurality of part holding clamps electrically coupled to a power source and positioned within the upper channel or the lower channel; a plating solution sparger comprising a series of inlets oriented to direct any plating solution flowing through the inlets into the lower channel and towards the upper channel; and a plurality of anodes positioned outside and along the length of the upper and lower channels.

Abstract: An actuator capable of flagellar motion is disclosed. The actuator comprises a carbon nanotube (CNT) rope and at least one metal/CNT composite part formed on the CNT rope.

Abstract: A plating method is capable of mechanically and electrochemically preferentially depositing a plated film in fine interconnect recesses such as trenches and via holes, and depositing the plated film to a flatter surface. The plating method including: disposing a substrate having fine interconnect recesses such that a conductive layer faces an anode; disposing a porous member between the substrate and the anode; filling a plating solution between the substrate and the anode; and repeating a process of holding the conductive layer and the porous member in contact with each other and moving the conductive layer and the porous member relatively to each other, a process of passing an electric current between the conductive layer and the anode while keeping the conductive layer still with respect to the porous member, and a process of stopping the supply of the electric current between the conductive layer and the anode.

Abstract: An electrochemical plating apparatus and method for facilitating uniform current distribution across a wafer during loading into an ECP (electrochemical plating) apparatus is disclosed. The apparatus includes a bath container for containing a bath solution, an anode provided in the bath container, a cathode ring for supporting a wafer in the bath container and a current source electrically connected to the anode and the cathode ring. According to the method, a voltage potential is applied to the cathode ring as it is immersed into the solution and prior to immersion of the wafer in the solution, thereby facilitating a substantially uniform plating current across the wafer upon immersion of the wafer.

Abstract: A plating method includes providing an article in a plating bath, covering a surface of the article with an insulating member in the plating bath, and electrolytically plating the article while moving one of the insulating member and the article relative to each other.

Abstract: The invention relates to a device for the electrolytic coating of at least one electrically conductive substrate (8) or a structured or full-surface electrically conductive surface on a nonconductive substrate (8), which comprises at least one bath, one anode and one cathode (1), the bath containing an electrolyte solution containing at least one metal salt, from which metal ions are deposited on electrically conductive surfaces of the substrate to form a metal layer while the cathode is brought in contact with the surface to be coated of the substrate and the substrate is transported through the bath. The cathode comprises at least one band (2) having at least one electrically conductive section (12), which is guided around at least two rotatable shafts (3).

Abstract: A method for applying a strike voltage to one or more substrates during plating. During this method, the substrates are moved in a planetary manner while being held at their exterior edges by a set of parallel mandrels. (The substrates are held in a mutually parallel orientation, typically vertically, during plating.) A voltage is applied to the substrates via a contact pin, a contact plate, a set of ball bearings, a rack end-plate, and the mandrels.

Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Abstract: A process for hydrogenating carbon dioxide to generate methanol. In the process, a strip of copper base plate is transported by the groups of rotating drive rollers to deposit porous metallic zinc on the copper base plate. Hydrogen is generated from the porous metallic zinc upon electrochemical reactions in the inner space sealed with the above groups of rollers. Simultaneously, zinc oxide and copper oxide catalysts are formed on the porous metallic zinc. Carbon dioxide is introduced into the sealed inner space under high-temperature and high-pressure to generate methanol by hydrogenation.

Abstract: Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.

Abstract: A plating assembly for use in plating metallic materials onto a surface of a substrate is provided. The plating assembly comprising a delivery unit having a fluid chamber, a metallic source, and a porous insert. The plating assembly also comprising a receiving unit having a fluid chamber and a metallic receiver. The receiving unit also has a porous insert. The porous insert of the delivery unit being substantially aligned with, and spaced apart from, the porous insert of the receiving unit. The metallic receiver being substantially aligned with the porous insert of the delivery unit and a path being defined between the delivery unit and the receiving unit. Wherein a plating meniscus is capable of being defined in the path between the porous inserts of the delivery unit and the receiving unit and a substrate is capable of being moved through the plating meniscus to enable the plating of metallic materials onto the surface of the substrate. Examples for de-plating are also provided.

Abstract: A copper electroplating bath composition and a method of copper electroplating to improve gapfill are provided. The method of electroplating includes providing an aqueous electroplating composition, comprising copper, at least one acid, at least one halogen ion, an additive including an accelerating agent, a suppressing agent, and a suppressing-accelerating agent, and the solution and mixture products thereof; contacting a substrate with the plating composition; and impressing a multi-step waveform potential upon the substrate, wherein the multi-step waveform potential includes an entry step, wherein the entry step includes a first sub-step applying a first current and a second sub-step applying second current, the second current being greater than the first current. The accelerating agent is provided in concentration of greater than 1.

Abstract: Clip devices contemplated herein comprise a metal-containing base, wherein the base comprises a lower clip body and an upper clip body, and wherein the lower clip body further comprises at least two sets of electrically conducting wire springs. Contemplated electrically conducting wire springs comprise at least one non-contact body section and a plurality of contact points.

Abstract: A holder-wafer conjugate, including a wafer in a wafer holder, is tilted so that the planar wafer surface makes a small angle with a plane parallel to the liquid surface of a liquid bath. Then, the holder-wafer conjugate is moved downward and a leading edge of the holder-wafer conjugate makes initial contact with the liquid surface of a liquid bath at a slow piercing speed to minimize generation of shock waves and bubbles. After a small portion of the holder-wafer conjugate is immersed in the liquid bath at a first pause location, the downward movement is stopped for a first pause time. After the first pause time, downward movement of the holder-wafer conjugate is resumed at a faster post-piercing speed until the wafer is fully immersed.

Abstract: The aqueous acidic solution for electrolytically depositing high polish, decorative bright, smooth and level copper coatings on large area metal or plastic parts contains a) at least one oxygen-containing, high molecular additive and b) at least one water soluble sulfur compound, wherein the solution additionally contains c) at least one aromatic halogen derivative having the general formula (I), wherein R1, R2, R3, R4, R5 and R6 are each independently radicals selected from the group comprising hydrogen, aldehyde, acetyl, hydroxyls, hydroxyalkyl having 1-4 carbon atoms, alkyl having 1-4 carbon atoms and halogen, with the proviso that the number of residues R1, R2, R3, R4, R5 and R6 which are halogen ranges from 1 to 5.

Abstract: Disclosed herein are a biaxially textured pure metal or alloy layer deposited by electroplating process on the surface of a single-crystalline or quasi-single-crystalline metal substrate, and a method for manufacturing the biaxially textured pure metal or alloy layer.

Abstract: A method for plating includes positioning a substrate facing a plating solution. The method also includes immersing the substrate into the plating solution while plating a layer of material over a surface of the substrate, wherein an immersion speed of the substrate is about 100 millimeters per second (mm/s) or more while at least one portion of the substrate contacts the plating solution.

Abstract: There is provided a plating apparatus and method which can control the temperature of a plating solution during plating more uniformly and easily form a uniform plated film on the to-be-plated surface of a workpiece, and which can simplify the device and decrease the footprint. The plating apparatus includes a plating bath having a double bath structure including an inner bath for holding a plating solution and carrying out plating, and an outer bath which surrounds the inner bath and is in fluid communication therewith. A heating device is disposed in the outer bath. The plating apparatus may further include means for circulating or stirring the plating solution in the plating bath.

Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Abstract: A tank is utilized for containing a plating solution. A rotatable support assembly rotatably supports a combustion chamber component relative to the tank for providing partial immersion of the combustion chamber component within the plating solution. An anode is positioned within the tank proximate a surface of the combustion chamber component to be electroplated. A current source is connected to the anode and in electrical contact with the combustion chamber component. When the combustion chamber component is rotated, the submerged portions are deposited with metal from the plating solution.

Abstract: Various embodiments of the invention provide techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion process. Preferred embodiments perform the extrusion processes via depositions through anodeless conformable contact masks that are initially pressed against substrates that are then progressively pulled away or separated as the depositions thicken. A pattern of deposition may vary over the course of deposition by including more complex relative motion between the mask and the substrate elements. Such complex motion may include rotational components or translational motions having components that are not parallel to an axis of separation. More complex structures may be formed by combining the electrochemical extrusion process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of a multi-layer electrochemical fabrication process.

Abstract: A phosphate coating apparatus for depositing a phosphate coating on a metal material by electrolyzing the metal material in a predetermined electrolysis solution includes a positive electrode and a negative electrode, of which one electrode being disposed in contact with the metal material and the other electrode being disposed away from the metal material with a predetermined distance, and the other electrode being formed into a tubular shape so as to cover the entire length of the metal material.

Abstract: The present invention provides a method for forming a conductive film with uniform properties on a wafer surface that has features or cavities. During the process, the workpiece is rotated and laterally moved while an electrodeposition solution is delivered onto the wafer surface at a predetermined flow rate, and a potential difference is applied between the workpiece surface and the electrode. The workpiece is rotated about an axis at predetermined revolutions per minute so that an edge region of the workpiece has a first predetermined linear velocity due to the rotation. The workpiece has a second predetermined linear velocity due to the lateral motion. The second predetermined velocity may be larger than the first predetermined velocity. Further, the wafer may not be rotated.

Abstract: The present invention includes a mask plate design that includes at least one or a plurality of channels portions on a surface of the mask plate, into which electrolyte solution will accumulate when the mask plate surface is disposed on a surface of wafer, and out of which the electrolyte solution will freely flow. There are also at least one or a plurality of polish portions on the mask plate surface that allow for polishing of the wafer when the mask plate surface is disposed on a surface of wafer.

Abstract: A process is provided for making a composite work article suitable for fabricating rigid sheet metal can components. A steel sheet having first and second surfaces is pre-treated to enhance reception and retention of a multi-layer polymer coating on the pre-treated first surface. The multi-layer polymer coating is melt extruded on the pre-treated first surface and beyond opposite lateral edges of the work article to establish overhang portions, then solidified. The multi-layer polymeric coating has a tie polymeric layer contacting the pre-treated first surface, and a finish-surface polymeric layer.

Abstract: Various embodiments of the invention provide techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion process. Preferred embodiments perform the extrusion processes via depositions through anodeless conformable contact masks that are initially pressed against substrates that are then progressively pulled away or separated as the depositions thicken. A pattern of deposition may vary over the course of deposition by including more complex relative motion between the mask and the substrate elements. Such complex motion may include rotational components or translational motions having components that are not parallel to an axis of separation. More complex structures may be formed by combining the electrochemical extrusion process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of a multi-layer electrochemical fabrication process.

Abstract: A plating apparatus and method which smoothly perform contact of a plating liquid with a surface of the substrate and which can prevent air bubbles from remaining on the surface to be plated. The plating apparatus includes a plating bath containing a plating liquid in which an anode is immersed, a head portion for holding a substrate detachably and bringing a lower surface, to be plated, of the substrate into contact with an overflow surface of the plating liquid held in the plating bath, a drive mechanism for rotating the head portion, and a tilt mechanism for tilting the head portion so that the substrate held by the head portion is inclined relative to a horizontal plane.

Abstract: Various embodiments of the invention provide techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion process. Preferred embodiments perform the extrusion processes via depositions through anodeless conformable contact masks that are initially pressed against substrates that are then progressively pulled away or separated as the depositions thicken. A pattern of deposition may vary over the course of deposition by including more complex relative motion between the mask and the substrate elements. Such complex motion may include rotational components or translational motions having components that are not parallel to an axis of separation. More complex structures may be formed by combining the electrochemical extrusion process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of a multi-layer electrochemical fabrication process.

Abstract: There is provided a semiconductor device comprising: a first plating layer formed on one surface of an interconnect pattern; a second plating layer formed within through holes in the interconnect pattern; a semiconductor chip electrically connected to the first plating layer; an anisotropic conductive material provided on the first plating layer; and a conductive material provided on the second plating layer, wherein the first plating layer has appropriate adhesion properties with the anisotropic conductive material, and the second plating layer has appropriate adhesion properties with the conductive material.

Abstract: A plating machine for plating a film carrier tape for mounting electronic parts includes a plating tank for plating wiring patterns of a film carrier tape and also has a bubble adhesion prevention means that is position adjustable with respect to the surface of a plating solution contained in the plating tank. The process for producing film carrier tapes for mounting electronic parts comprises partially immersing a film carrier tape in a plating solution contained in a plating tank and selectively plating wiring patterns formed in the immersed area while adsorbing bubbles generated in the plating solution to a bubble adhesion prevention means arranged at the surface of the plating solution.

Abstract: An anodic oxidation apparatus and an anodic oxidation method are provided that enable uniform photoirradiation of a treatment part of a target substrate, thereby realizing enhancement in uniformity of anodic oxidation in the surface of the target substrate. The anodic oxidation apparatus includes: a lamp that emits light; a target substrate holder provided at a position reached by the emitted light and capable of holding the target substrate; a cathode electrode that is provided on the way of the emitted light to reach the target substrate and that has an opening portion to allow light to pass therethrough and has a conductor section not transmitting light; and a vibrating mechanism to periodically vibrate a spatial position of one of the cathode electrode, the lamp, and the target substrate holder.

Abstract: The present invention provides an apparatus for electrochemical mechanical processing of a surface of a workpiece by utilizing a process solution. The apparatus of the present invention includes an electrode touching the process solution, a belt workpiece surface influencing device extended between a supply spool and a receiving spool. During the process, the surface of the workpiece is placed in proximity of the workpiece surface influencing device and the process solution is flowed through the process section and onto the surface while a potential difference is applied between the electrode and the surface of the workpiece.

Abstract: A method of producing metal ferrules and an apparatus therefore enable metal ferrules to be produced with high productivity and high dimensional accuracy by arranging a plurality of long-sized core wires. A jig receives a metal to be electroformed and is placed in an electroforming tank, a holding unit in which a plurality of core wire holder for holding core wires are held in circumferential array is installed in the electroforming tank, and the core wire holders and the holding unit are rotatable on their respective axes. It is preferable that the resistivity of the core wires be 5×10?6 ?cm or less. A core wire plated within a thin layer of metal having a resistivity of 5×10?6 ?cm or less may be used. A conductive electric discharge body may be provided on the front end of the core wire.

Abstract: The present invention relates to a method of reducing a band mark on an electroplating steel sheet, which can also reduce plating defects and damages to the materials caused by the differences in the physical characteristics of composition materials of a conductor roll used during electroplating Zn or Ni onto a steel sheet. In other words, the present invention comprises ceramic coating portions of circular bands, placed respectively in a thin strip at the both edge regions of the metal band position at the central portion of a conductor roll. In this manner, the present invention has the effects of reducing a band mark on a plating steel sheet, and also suppressing the generation of static electricity by eliminating the level difference between the conductive material (metal band portion) and the non-conductive material (rubber section). The present invention is also cabaple extending the life of a conductor roll by enhancing the wear and corrosion resistances thereof.

Abstract: The present invention provides apparatus and methods for controlling flow dynamics of a plating fluid during a plating process. The invention achieves this fluid control through use of a diffuser membrane. Plating fluid is pumped through the membrane; the design and characteristics of the membrane provide a uniform flow pattern to the plating fluid exiting the membrane. Thus a work piece, upon which a metal or other conductive material is to be deposited, is exposed to a uniform flow of plating fluid.

Abstract: The present invention relates to a method for forming a planar conductive surface on a wafer. In one aspect, the present invention uses a no-contact process with electrochemical deposition, followed by a contact process with electrochemical mechanical deposition.

Abstract: An apparatus for processing a material on a wafer surface includes a cavity defined by a peripheral wall and configured to direct a process solution and direct it to the surface to to a first wafer surface region without being directed to a second wafer surface region, a head configured to hold the wafer so that the surface of the wafer faces the cavity, and an electrical contact member positioned outside the cavity peripheral wall and configured to contact the second wafer surface region extending beyond the cavity, when the wafer is moved relative to the contact member. Advantages of the invention include substantially full surface treatment of the wafer.

Abstract: For electrolytic treatment of circuit boards and foils LP, a method and a device are used in which the sheets and foils are transported through a treatment unit and brought thereby in contact with treatment fluid 3. The sheets and foils are guided during transportation past at least one electrode arrangement, which comprises respectively cathodically polarized electrodes 6 and anodically polarized electrodes 7, the cathodically and anodically polarized electrodes also being brought in contact with the treatment fluid. The cathodically polarized electrodes and the anodically polarized electrodes are connected to a current/voltage source 8, so that a current flows through the electrodes 6, 7 and the electrically conductive surfaces 4.

Abstract: An electroplating device including an anode inserted through and disposed in a hole provided in a work and communicating with the outside, and a member for rotating the work about its center axis and supplying a plating electric current to the work. Alternatively, a separate member may supply the plating electric current to the work. A plating solution in the hole in the work may be allowed to flow. Thus, a uniform plated film can be formed on both of the outer and inner surfaces of the work having the communicating with the outside such as a ring-shaped work, of which a ring-shaped bonded magnet is representative, by using the electroplating device.

Abstract: Electroplating station S has a head 1 with anode 2, to one side of which there is located an electrically neutral wall 3. The width of anode 2 is provided to accommodate the width of web 6. Serrations 9 are provided on the anode 2, especially in the area of top surface 8. A passageway 4 for electrolyte 5 is between anode 2 and wall 3. Mesh 11 is located at a throat section 12 of passageway 4 shortly before the start of the guide 7. In addition, mesh 13 is located further upstream in passageway 4 as an alternative and/or as an addition to mesh 11. Guide 7 of wall 3, serrations 9, and meshes 11 and 13 enhance and maximize the production of stream-wise vortices. These vortices cause a substantial increase in the ion flow, which overcomes boundary layers and results in additional deposition of copper onto the web 6.

Abstract: A cathode potential is applied to a conductive layer formed on a substrate having a depression pattern. A plating solution in electrical contact with an anode is supplied to the conductive layer to form a plating film on the conductive layer. At this time, the plating solution is supplied by causing an impregnated member containing the plating solution to face the conductive layer. Since the plating solution stays in the depression, a larger amount of plating solution is supplied than on the upper surface of the substrate, and the plating rate of the plating film in the depression increases. Consequently, the plating film can be preferentially formed in the depression such as a groove or hole.

Abstract: The present invention relates to a copper electroplating bath composition and method of using it for microelectronic device fabrication. In particular, the present invention relates to copper electroplating in the fabrication of interconnect structures in semiconductor devices. By use of the inventive copper electroplating bath composition, the incidence of voids in the interconnect structures is reduced.

Abstract: A plating method and apparatus using contactless electrode is described. In one embodiment an inductive element is placed proximally to a substrate and a moving electromagnetic field generates an emf in the substrate to plate the surface. In another embodiment, a conductive plate is used, so that the conductive plate and the wafer, separated by a dielectric material, operate as two plates of a capacitor when voltage is applied to the conductive plate. The resulting electrostatic field impresses a charge potential on the substrate to plate the surface of the substrate.