Abstract: Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.

Abstract: The present invention provides an edge cleaning system and method in which a directed stream of a mild etching solution is supplied to an edge area of a rotating workpiece, including the front surface edge and bevel, while a potential difference between the workpiece and the directed stream is maintained. In one aspect, the present invention provides an edge cleaning system that is disposed in the same processing chamber that is used for deposition or removal processing of the workpiece. In another aspect, the mild etching solution used for edge removal is also used to clean the front surface of the wafer, either simultaneously with or sequentially with the edge removal process.

Abstract: A negative bias is applied to an integrated circuit wafer immersed in an electrolytic plating solution to generate a DC current. After about ten percent to sixty percent of the final layer thickness has formed in a first plating time, biasing is interrupted during short pauses during a second plating time to generate substantially zero DC current. The pauses are from about 2 milliseconds to 5 seconds long, and typically about 10 milliseconds to 500 milliseconds. Generally, about 2 pauses to 100 pauses are used, and typically about 3 pauses to 15 pauses. Generally, the DC current density during the second plating time is greater than the DC current density during the initial plating time. Typically, the integrated circuit wafer is rotated during electroplating. Preferably, the wafer is rotated at a slower rotation rate during the second plating time than during the first plating time.

Abstract: The invention relates to a device for conveying electrodes, used in the electrolytic refining or electrowinning of metals, from one station to another, particularly when the electrodes are conveyed in an essentially perpendicular direction with respect to the line connecting the electrode support points. According to the invention, in order to convey an electrode, the device is provided with mutually separate members, at least one lift member for a vertical motion of the electrode and at least one conveyor member for the horizontal motion of the electrode.

Abstract: Apparatus and methods are disclosed for electroplating conductive films on semiconductor wafers, wherein field adjustment apparatus is located in a reservoir between a cathode and an anode to influence the electric field used in the plating process. Field adjustment apparatus is presented having one or more apertures, which may be selectively plugged to adjust the electrical fields during plating.

Abstract: Embodiments of the invention generally provide a method for removing a substrate from a processing fluid contained in a processing cell. The method includes tilting the substrate to a tilt angle, rotating the substrate, vertically moving the substrate upward out of the processing fluid, and applying an electrical removal bias to the substrate during the vertical movement of the substrate out of the processing fluid.

Abstract: The present invention relates to a plating method and a plating apparatus which can attain embedding of copper into fine interconnection patterns with use of a plating liquid having high throwing power and leveling properties, and which can make film thickness of a plated film substantially equal between an interconnection region and a non-interconnection region. A plating method comprises filling a plating liquid containing metal ions and an additive into a plating space formed between a substrate and an anode disposed closely to the substrate so as to face the substrate, and changing concentration of the additive in the plating liquid filled into the plating space during a plating process.

Abstract: The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath.

Abstract: The present invention provides a method for forming a conductive film with uniform properties on a wafer surface that has features or cavities. During the process, the workpiece is rotated and laterally moved while an electrodeposition solution is delivered onto the wafer surface at a predetermined flow rate, and a potential difference is applied between the workpiece surface and the electrode. The workpiece is rotated about an axis at predetermined revolutions per minute so that an edge region of the workpiece has a first predetermined linear velocity due to the rotation. The workpiece has a second predetermined linear velocity due to the lateral motion. The second predetermined velocity may be larger than the first predetermined velocity. Further, the wafer may not be rotated.

Abstract: An improved plating system comprises a plurality of non-electrically conductive shields forming an elongated upper channel and an elongated lower channel, the upper and lower channels each having a width less than or equal to one inch; a plurality of part holding clamps electrically coupled to a power source and positioned within the upper channel or the lower channel; a plating solution sparger comprising a series of inlets oriented to direct any plating solution flowing through the inlets into the lower channel and towards the upper channel; and a plurality of anodes positioned outside and along the length of the upper and lower channels.

Abstract: The invention relates to a novel apatite-coated metallic material having improved surface quality and biocompatibility, a process for its preparation, and the use of the material for bone implants, in particular dental implants, artificial joints and fixative material for accident surgery (osteosynthesis material). The coating in this case consists of a thick covering of hydroxyapatite crystals and/or amorphous calcium phosphate spheres having a specific surface area of less than 15 m2/g.

Abstract: A wafer electroplating apparatus and method, comprising a wafer turning assembly, a vertical movement assembly, a wafer tilting assembly, and a frame. The wafer turning assembly has a turning shaft and a clasp for holding a wafer. The wafer tilting assembly has a tilting table being driven by a driving system, e.g. a cylinder, carrying an electroplating unit and wafer turning assembly. Thus the clasp holding a wafer and the electroplating unit are simultaneously inclined at preset angle against the horizontal plane, allowing for a large inclination angle. Therefore, gas bubbles generated during electroplating readily escape, and quality of electroplating is improved.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a workpiece surface in a highly desirable manner. Using a workpiece-surface-influencing device, such as a mask or sweeper, that preferentially contacts the top surface of the workpiece, relative movement between the workpiece and the workpiece-surface-influencing device is established so that an additive in the electrolyte solution disposed on the workpiece and which is adsorbed onto the top surface is removed or otherwise its amount or concentration changed with respect to the additive on the cavity surface of the workpiece. Plating of the conductive material can place prior to, during and after usage of the workpiece-surface-influencing device, particularly after the workpiece surface influencing device no longer contacts any portion of the top surface of the workpiece, to achieve desirable semiconductor structures.

Abstract: The present invention provides a web conveying apparatus for conveying a web while holding the web and applying tension to the web, wherein the conveying apparatus has a plurality of rollers with which the web contacts to be conveyed, and at least one roller of the plurality of rollers has a mechanism for limiting deformation of the web within Y/E, and a web conveying method using a web conveying apparatus for conveying a web while holding the web and applying tension to the web, wherein the conveying apparatus has a plurality of rollers with which the web contacts to be conveyed, and the web is conveyed while the deformation of the web is limited within Y/E by a mechanism that is provided for at least one roller of the plurality of rollers. The apparatus and the method prevent meandering of the web.

Abstract: Electroplating methods and systems employing ultrasonic energy to enhance electroplating processes. The electroplating methods involve sweeping a plating surface with ultrasonic energy having an area of maximum ultrasonic energy density while simultaneously performing electroplating. The systems include movement apparatus providing relative movement between an ultrasonic energy source and a cathode while the ultrasonic energy source and the cathode are located within a plating tank.

Abstract: A cell to electroplate and/or electropolish semiconductor wafers includes an electrolyte receptacle and a wafer chuck assembly. The cell also includes a first actuator configured to translate the wafer chuck assembly between a first position and a second position, where the wafer chuck assembly covers the electrolyte receptacle in the first position and retracts from the electrolyte receptacle in the second position.

Abstract: A tank is utilized for containing a plating solution. A rotatable support assembly rotatably supports a combustion chamber component relative to the tank for providing partial immersion of the combustion chamber component within the plating solution. An anode is positioned within the tank proximate a surface of the combustion chamber component to be electroplated. A current source is connected to the anode and in electrical contact with the combustion chamber component. When the combustion chamber component is rotated, the submerged portions are deposited with metal from the plating solution.

Abstract: A plating apparatus continuously plates a surface of a substrate with metal and performs its supplementary process in one housing unit. The plating apparatus comprises a cassette stage for placing a substrate cassette thereon, a pre-treatment unit for pre-treating a surface of a substrate, and a plating unit for plating a surface of the substrate pre-treated in the pre-treatment unit. The plating apparatus further comprises a first substrate stage disposed between the cassette stage and the pre-treatment unit, a cleaning and drying unit disposed between the cassette stage and the first substrate stage, a first transfer device, and a second transfer device. The first transfer device transfers a substrate between the substrate cassette, the cleaning and drying unit, and the first substrate stage. The second transfer device transfers a substrate between the first substrate stage, the pre-treatment unit, and the plating unit.

Abstract: After bubbles adsorbed to a substrate are removed by rotating the substrate in a plating solution at a higher speed or after the wettability of the surface of the substrate to be plated is improved before the substrate is immersed in the plating solution, the substrate is rotated in the plating solution at a lower speed so that a plating process is performed with respect to the substrate.

Abstract: A processing rack, such as for electroplating, which minimizes shelf areas of an article during processing of the article and during removal of the article from a processing bath and which allows easy mounting of articles on the rack and demounting of articles from the rack includes a frame and a plurality of article mounting fixtures that are each pivotally mounted on the frame and independently pivotable from a first orientation that facilitates mounting and/or demounting of articles, to a second orientation that is most conducive to producing high quality, substantially defect-free plating.

Abstract: A plating apparatus for performing a plating process for plating a surface of a substrate. This plating apparatus is provided with a first electrode to be brought into contact with a peripheral edge portion of the substrate; a plating vessel for containing a plating liquid to be brought into contact with the surface of the substrate, the plating vessel having a vertical tubular interior surface; a second electrode disposed in the plating vessel, the second electrode being spaced from the substrate by a distance which is not smaller than a distance between a center portion and a peripheral edge portion of the substrate during the plating process; and an electric current limiting member for limiting horizontal flow of an electric current in the plating liquid between the second electrode and the substrate within the plating vessel during the plating process.

Abstract: What is disclosed is a no-rinse autodeposition process to dip-apply a metal part in an aqueous resin coating bath with an immersion time and, wherein the removal rate of the dipped part is kept equal or below drainage rate of mobile liquid portion, such that upon removal of the part, drip edge formation is minimized and a DFT is maintained within acceptable tolerance levels.

Abstract: A method to make probes of a probe card includes providing a blocking plate on an electroplating tank. The blocking plate has a plurality of openings according to the layout of contact pads on a probe head. There are bumps on the contact pads of probe head. Continuous electroplating process can be executed after bumps (contact pads) contact electroplating solution in the electroplating tank through the openings of the blocking plate. By continuously moving the probe head according to the desired shape of probes, probes were formed by electroplating. These probes can be made into different shapes with good uniformity in elasticity and heights to increase the quality of electrical contact during wafer probing. Moreover, the process lead time and fabrication cost are saved.

Abstract: The disclosed embodiments represent a method and apparatus for improving a lead-free electroplating process in the manufacture of semiconductor devices. To prevent the buildup of undesirable copper or bismuth on a conveyor belt and the associated tooling used to transport integrated circuit devices through an electroplating bath, a metal more noble than copper or bismuth, depending on which is used as a plating metal, is plated onto the surface of the conveyor belt and associated tooling.

Abstract: A method for immersing a substrate into a processing solution. The method includes connecting a power supply between a conductive layer on the substrate and an electrode positioned in the processing solution, immersing the substrate into the processing solution, and applying an electrical bias to the conductive layer during the immersion.

Abstract: According to aspect of the invention, a plating system is provided which includes a tank for containing a plating solution, a shaft extending into the tank, and a substrate holder mounted to the shaft. The shaft and the tank are rotatable relative to one another. The substrate holder is configured to support a substrate in position so that at least a first face of the substrate is exposed to the plating solution in the tank.

Abstract: A method and apparatus for immersing a substrate for plating operations. The apparatus generally includes a plating cell configured contain a plating solution therein. The plating cell includes at least one fluid basin, a diffusion plate position in a lower portion of the at least one fluid basin, and an anode positioned below the diffusion plate, the anode and the diffusion plate being positioned in parallel orientation with each other and in a tilted orientation with respect to horizontal. The apparatus further includes a head assembly positioned proximate the plating cell, the head assembly including a base member, an actuator positioned at a distal end of the base member, and a substrate support assembly in mechanical communication with the actuator, the substrate support assembly being configured to support a substrate in the at least one fluid basin for processing in an orientation that is generally parallel to the diffusion plate.

Abstract: In an electroplating apparatus for semiconductor wafers, the currents to each of a plurality of contact portions contacting the wafer edge are individually adjustable and/or a parameter indicative of the current flow in each contact portion may be determined. Moreover, for precise control of the currents, means are provided for monitoring the currents.

Abstract: An apparatus and method for supporting a substrate is provided. In one embodiment, an apparatus for supporting a substrate includes a body having a band extending therefrom. The band is adapted to retain a fluid on the body thereby forming a shallow processing bath for processing the substrate. The band is adapted to deflect under centrifugal force to release the fluid from the substrate as the body is rotated above a predetermined rate.

Abstract: An apparatus and associated method for deposition of metal ions contained in an electrolyte solution to form a metal film primarily on a seed layer formed on at least a first side of a substrate. The substrate has a second side that is opposed the first side and an edge joining the first side and the second side. The apparatus comprises a substrate holder system and an electric contact element. The electric contact element physically contacts one of the second side or the edge of the substrate. In one aspect, the substrate is rotated about its vertical axis when the seed layer of substrate is immersed in the electrolyte solution during the metal film deposition. In another aspect, the substrate is not rotated about its vertical axis when the seed layer on the substrate is immersed in the electrolyte solution during the metal film deposition.

Abstract: A system for depositing materials on a surface of a wafer or removing materials from the surface of a wafer includes an electrode, a shaping plate, a liquid solution contained between the electrode and the wafer surface, and electrical contact members contacting selected locations on the wafer surface. The shaping plate is supported between the electrode and the wafer surface such that an upper surface of the shaping plate faces the wafer surface. The shaping plate can have a plurality of channels where each puts the wafer surface in a fluid communication with the electrode. The electrical contact members contact the selected locations on the wafer surface through a recessed edge of the shaping plate such that when the wafer is rotated, the selected contact locations move over the shaping plate and are plated under an applied potential. Advantages of the invention include substantially full surface treatment of the wafer.

Abstract: A conveyorized electroplating device having an anode positioned proximate to a plurality of absorptive applicator assemblies that apply a plating solution to a substrate and a conveyor device that grips the substrate thereby isolating the electrical contact from the plating solution. The conveyorized electroplating device has a fluid bed assembly with a manifold and an anode, a conveyor device adjacent to the fluid bed assembly, and a plurality of absorptive applicator assemblies, wherein the plurality of absorptive applicator assemblies are adjacent and in close proximity to the anode and in fluid communication with the fluid bed assembly. The conveyor device isolates the electrical contacts from the plating solution and is able to handle various sizes and thicknesses of substrates.

Abstract: An electrochemical reaction assembly and methods of inducing electrochemical reactions, such as for deposition of materials on semiconductor substrates. The assembly and method achieve a highly uniform thickness and composition of deposition material or uniform etching or polishing on the semiconductor substrates by retaining the semiconductor substrates on a moving cathode immersed in an appropriate reaction solution wherein a wire mesh anode rotates about the moving cathode during electrochemical reaction.

Abstract: An apparatus and method for electro-chemically depositing a uniform metal layer onto a substrate is provided. In one aspect, the apparatus includes a cathode connected to the substrate plating surface, an anode disposed above the substrate support member and an electroplating solution inlet supplying an electroplating solution fluidly connecting the anode and the substrate plating surface. In another aspect, the apparatus further includes a dual catch-cup system having an electroplating solution catch-cup and a rinse catch-cup. The dual catch-cup system provides separation of the electroplating solution and the rinse solutions during processing and provides re-circulating systems for the different solutions of the electroplating system.

Abstract: The present invention relates to a process for electrolytically producing metal foil which is diminished in pinhole defects and has a uniform thickness. The metal foil is produced by passing an electric current between a cylindrical cathode immersed in an electrolytic solution and an anode opposed to the cathode, continuously electrodepositing a metal layer on the surface of the cathode while rotating the cathode and thereafter peeling the metal layer off. An auxiliary anode capable of adjusting the current density when electrodeposition is started is disposed at a position downstream from the anode with respect to the direction of flow of the electrolytic solution. The auxiliary anode is an electrode having a coating layer comprising an electrode active substance and formed over an electrically conductive metal substrate, with an intermediate layer of tantalum or a tantalum alloy formed between the coating layer and the substrate.

Abstract: An electrochemical deposition apparatus and method for depositing a material onto a surface of a workpiece and for polishing the material are disclosed. The apparatus includes a platen and a polishing surface, including a conductive material and conductors embedded therein, disposed proximate the platen. During material deposition, a bias is applied across the conductor and the platen to cause deposition of material onto the workpiece surface.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: A method of immersing a substrate into electrolyte solution for electroplating, the method comprising connecting an electric source between an anode immersed in the electrolyte solution and a seed layer formed on the substrate. A first voltage level of the seed layer is biased to be equal to, or more positive than, a second voltage level of the anode. The substrate is then immersed into the electrolyte solution.

Abstract: The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Abstract: For manufacturing printed circuit boards and films 7 with little variations in the layer thickness of the circuit structures without damaging the surfaces of the boards and films, a rotatory element 9, 10, more specifically a contact roll, is used for placing the printed circuit boards and films in electric contact, an elastic, electrically conductive material 2, 5, 6 being at least partially applied on the running tread unreeling on the printed circuit boards and films.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion and causing greater plating of the cavity portion relative to the top portion.

Abstract: The present invention relates to a method for forming a planar conductive surface on a wafer. In one aspect, the present invention uses a no-contact process with electrochemical deposition, followed by a contact process with electrochemical mechanical deposition.

Abstract: A method of processing wafers or other articles within a processing cell, entailing transporting a carrier supporting a vertically-oriented wafer horizontally through an inlet opening of a process cell, processing the vertically-oriented wafer within the process cell, and then transporting the carrier out of the process cell horizontally through an outlet opening of the process cell. In one exemplary implementation, the process performed within the cell is a pre-or post- treatment where the wafer is subjected to an acid solution treatment and/or a rinsing with de-ionized water treatment. In another exemplary implementation, the process performed within the process cell is an electroplating of the plating surface of the wafer. Additionally, a method of processing an empty carrier entailing transporting the carrier horizontally through an inlet opening of a process cell, processing the carrier within the process cell, and transporting the carrier out of the process cell horizontally through an outlet opening.

Abstract: A composite for use in forming a multi-layer printed circuit board, comprised of an INVAR® sheet having a thickness of between 0.5 mil and 5 mil; and a layer of electrodeposited copper on at least one side thereof. The copper has a thickness of between 1&mgr; and 50&mgr;, wherein the composite has a thermal coefficient of expansion (TCE) of about 2.8 to 6.0 ppm at temperatures between 0° F. and 200° F.

Abstract: Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.

Abstract: In a device, rod-shaped objects 10 (rods of various length and diameter) are electrochemically partially processed in dip plants (galvanized, pickled). Stationary tubular electrodes 30, into which the rods 10 are centrically entered, are provided in the plating tank of the plant. The surfaces to be plated are each axially limited by an adjustable membrane carrier 26, in which elastic shielding membranes 9 for delimiting the field lines are arranged. The membranes 9 are held by membrane holders 5. The membrane holders 5 are arranged in a cage where they are free to move radially and are provided with inner centering springs 7 and with outer centering springs 19 so that the membrane holder 5 and the membranes 9 are held in such a way as to be self-centering.

Abstract: A method of processing wafers or other articles within a processing cell, entailing transporting a carrier supporting a vertically-oriented wafer horizontally through an inlet opening of a process cell, processing the vertically-oriented wafer within the process cell, and then transporting the carrier out of the process cell horizontally through an outlet opening of the process cell. In one exemplary implementation, the process performed within the cell is a pre-or post-treatment where the wafer is subjected to an acid solution treatment and/or a rinsing with de-ionized water treatment. In another exemplary implementation, the process performed within the process cell is an electroplating of the plating surface of the wafer. Additionally, a method of processing an empty carrier entailing transporting the carrier horizontally through an inlet opening of a process cell, processing the carrier within the process cell, and transporting the carrier out of the process cell horizontally through an outlet opening.

Abstract: A single delivery channel is formed by, and between, inner wall 2 and baffle 3. Electrolyte 5 is pumped up the interior of channel 1 and is directed onto substrate 4 being a cathode maintained at −10 volts. The upper part of the inner wall 2 of channel 1 forms the anode such that electrote is forced between the substrate and the upper horizontal surface of the anode 6. A second baffle 7 is provided in order to assist in collecting and removing electrolyte 5 after impingement with substrate 4, possible for re-use. Contact between the electrolyte 5 and substrate 4 is optimised by providing the electrolyte with a swirling motion as it passes up channel 1. Anode 6 is a solid conducting bar 10, alternatively it is formed of solid rods 11 nor tubes 12.

Abstract: An electroplating apparatus includes a plurality of feeding rollers adapted to advance a sheet-shaped article, and a spraying unit. The spraying unit has a pair of upper and lower casings, each of which includes a casing body defining a chamber, and a net plate disposed to confront with the article. An electrolyte is sprayed from the chamber via meshes in the net plate and onto a side surface of the article. An anode current-conducting assembly includes a conducting net that is disposed fixedly within the chamber and that is superimposed on the net plate so as to cover the meshes in the net plate, and two conducting units respectively in electrical contact with two opposite side portions of the conducting net so as to supply electric current to the conducting net.