Abstract: Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.

Abstract: To avoid the formation of undesirable plating on electric supply rollers, there is provided a continuous plating apparatus in which a planar article to be plated is vertically clamped on both sides by electric supply rollers and the article to be plated is moved horizontally in a plating bath by the rotation of the electric supply rollers to plate both surfaces of the article to be plated. The apparatus is characterized in that the electric supply rollers are divided into conductive segments and non-conductive segments in the circumferential direction, with only the conductive segment which is in contact with the article to be plated being negatively charged, and other conductive segments which are at a distance from the article being positively charged.

Abstract: The invention provides an electro-chemical deposition cell for face-up processing of semiconductor substrates comprising a substrate support member, a cathode connected to the substrate plating surface, an anode disposed above the substrate support member and an electroplating solution inlet supplying an electroplating solution fluidly connecting the anode and the substrate plating surface. Preferably, the anode comprises a consumable metal source disposed in a liquid permeable structure, and the anode and a cavity ring define a cavity for holding and distributing the electroplating solution to the substrate plating surface. Preferably, the substrate support member comprises a vacuum chuck having vacuum ports disposed on the substrate supporting surface that serves to provide suction during processing and to provide a blow-off gas flow to prevent backside contamination during substrate transfers.

Abstract: A method and associated apparatus of electroplating an object and filling small features. The method comprises immersing the plating surface into an electrolyte solution and mechanically enhancing the concentration of metal ions in the electrolyte solution in the features. In one embodiment, the mechanical enhancement comprises mechanically vibrating the plating surface. In another embodiment, the mechanical enhancement comprises mechanically vibrating the electrolyte solution. In a further embodiment, the mechanical enhancement comprises increasing the pressure applied to the electrolyte solution.

Abstract: The present invention provides an electroplating device including an anode inserted through and disposed in a hole provided in a work and communicating with the outside, and a member for rotating the work about its center axis and supplying a plating electric current to the work. The present invention also provides an electroplating device including an anode inserted through and disposed in a hole provided in a work and communicating with the outside, a member for rotating the work about its center axis, and a member for supplying a plating electric current to the work. Further, the present invention provides an electroplating device including an anode inserted through and disposed in a hole provided in a work and communicating with the outside, and a means for allowing a plating solution in the hole in the work to flow.

Abstract: The present invention provides a method and apparatus for plating a conductive material to a substrate and also modifying the physical properties of a conductive film while the substrate is being plated. The present invention further provides a method and apparatus that plates a conductive material on a workpiece surface in a “proximity” plating manner while a pad type material or other fixed feature is making contact with the workpiece surface in a “cold worked” manner. In this manner, energy stored in the cold worked regions of the plated layer is used to accelerate and enhance micro-structural recovery and growth. Thus, large grain size is obtained in the plated material at a lower annealing temperature and a shorter annealing time.

Abstract: Electro-plating apparatus 1 has an electro-plating bath 2 containing electrolyte 3, an anode configuration immersed in electrolyte 3 being a planar anode 4 and an arcuate solid anode 5. In use, a continuous web of flexible substrate 6 (onto both side of which material is to be deposited) is passed along a transport system 7 in a direction shown by arrow A. Transport system 7 comprises a set of rollers 8, 9 of which rollers 8 are generally cylindrical, driving rollers while rollers 9 are cathode connectors and have a number of circumferential projections 10 which ensure electrical contact with unconnected or discreet regions on substrate 6. Another electro-plating apparatus 20 has a cathode connector configuration 21 with four comb electrodes 22 each having a main portion 23 with a plurality of teeth 24 each of which has end 25 inclined in the direction of the movement fo the substrate.

Abstract: A process for electrolytically processing a flat perforated item, comprising the steps of: moving the item in a transport direction to a treatment station where the item is contacted with an electrolyte, continuously mechanically wiping, in the presence of one of a cathodic item and an anode, and an anodic item and a cathode, a surface of the item using means for reducing the thickness of a diffusion layer depleted in metal ions adjacent the surface of the item, which means include a wiping roller extending perpendicular to the transport direction over the entire width of the item and in contact with the item; and moving the electrolyte in a direction substantially perpendicular to a plane of the item so as to direct the electrolyte only toward the perforations in the item and to convey the electrolyte through the in the item under pressure.

Abstract: In a device for surface treatment, in particular for electrochemical coating followed by electrophoretic coating, the material to be treated is moved through coating vessels in one or more planes. This is carried out using stepped cage conveyors which are provided, at different heights, with bearing arms for trays on which the material to be treated is located. Horizontal electrodes, past which the trays are moved, project between the bearing arms of each plane or into the space between each tray.

Abstract: The present invention relates to a plating method and a plating apparatus which can attain embedding of copper into fine interconnection patterns with the use of a plating liquid having high throwing power and leveling properties, and which can make the film thickness of the plated film substantially equal between the interconnection region and the non-interconnection region, thereby facilitating a later CMP processing. A plating method comprising filling a plating liquid containing metal ions and an additive into a plating space formed between a substrate and an anode disposed closely to the substrate so as to face the substrate, and changing the concentration of the additive in the plating liquid filled into the plating space during a plating process.

Abstract: The present invention is applicable to composite particles for composite dispersion plating used for forming a self-lubricating composite dispersion coating and a method of plating using such composite particles as well as a plating (coating) using the same. The purpose of the invention is to obtain a composite particle for composite dispersion plating which is comprised of a particle with an excellent capability of reducing the friction and a low or very low specific gravity, and a method of plating using such composite particles. In this invention, each of the composite particles includes a friction-reducing mother or core particle (1) encapsulated with shell particles (2) comprised of the same components as a base metal of a composite dispersion plating bath (5). This provides a composite particle for composite dispersion plating which is comprised of a particle with an excellent capability of reducing the friction and a low or very low specific gravity.

Abstract: The present invention relates to a copper electroplating bath composition and method of using it for microelectronic device fabrication. In particular, the present invention relates to copper electroplating in the fabrication of interconnect structures in semiconductor devices. By use of the inventive copper electroplating bath composition, the incidence of voids in the interconnect structures is reduced.

Abstract: This invention relates, particularly, to a plating method and apparatus for a substrate for uses, such as the filling of a metal, e.g., copper (Cu), into a fine interconnection pattern (recesses) formed in a semiconductor substrate.

Abstract: The present invention is directed to processes and devices for performing the processes comprising electroplating one or more metallic or non-metallic continuous products with metals or metal alloys in a continuous process from aprotic electrolytes free of water and oxygen, wherein the continuous product is passed through a lock system (1) into an encapsulated coating plant under inert gas atmosphere, and the following steps are performed at temperatures ≦120° C.: activating the continuous product to be coated; rinsing the continuous product to be coated; contacting the continuous product to be coated; electroplating the continuous product to be coated using a metal or metal alloy; drying the coated continuous product; discharge of the coated continuous product from the plant through a lock system.

Abstract: An electrochemical reaction assembly and methods of inducing electrochemical reactions, such as for deposition of materials on semiconductor substrates. The assembly and method achieve a highly uniform thickness and composition of deposition material or uniform etching or polishing on the semiconductor substrates by retaining the semiconductor substrates on a moving cathode immersed in an appropriate reaction solution wherein a wire mesh anode rotates about the moving cathode during electrochemical reaction.

Abstract: In an electroplating method, a plating target article (X) disposed so as to be in contact with plating bath (14) is set as a cathode while a metal member disposed so as to be in contact with the plating bath (14) is set as an anode, and a voltage is applied between the cathode and the anode while vibrational flow is induced by vibrating vibrational vanes (16f) which are fixed in multi-stage style to a vibrating rod (16e) vibrating in the plating bath (14) interlockingly with vibration generating means (16d). Plating current flowing from the anode through the plating bath (14) to the cathode is pulsed and alternately set to one of a first state where the plating current keeps a first value I1 for a first time T1 and a second state where the plating current keeps a second value I2 having the same polarity as the first value I1 for a second time T2, the first value I1 being five or more times larger than the second value I2, and the first time T1 being three or more times longer than the second time T2.

Abstract: The invention relates to a device and a method for evening out the thickness of metal layers on electrical contact points on flat items to be treated 7, such as conductor foil and printed circuit boards, during the electrolytic treatment of the items to be treated, guided in a horizontal plane of conveyance in a continuous electroplating plant. The device has counter-electrodes 2, 3 located opposite the plane of conveyance and clamps 4, secured to a continuously revolving means of conveyance 5, for contacting the items to be treated 7. The clamps 4 have a lower portion 14 and an upper portion 13 which are electrically conductive, have a surface consisting of metal, are moveable in relation to one another and respectively have at least one contact point 6 for the items to be treated 7. In addition, at least one current source is provided to produce a flow of current between the counter-electrodes and the items to be treated.

Abstract: Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.

Abstract: A conveyorized electroplating device having an anode positioned proximate to a plurality of absorptive applicator assemblies that apply a plating solution to a substrate and a conveyor device that grips the substrate thereby isolating the electrical contact from the plating solution. The conveyorized electroplating device has a fluid bed assembly with a manifold and an anode, a conveyor device adjacent to the fluid bed assembly, and a plurality of absorptive applicator assemblies, wherein the plurality of absorptive applicator assemblies are adjacent and in close proximity to the anode and in fluid communication with the fluid bed assembly. The conveyor device isolates the electrical contacts from the plating solution and is able to handle various sizes and thicknesses of substrates.

Abstract: An electrochemical reaction assembly and methods of inducing electrochemical reactions, such as for deposition of materials on semiconductor substrates. The assembly and method achieve a highly uniform thickness and composition of deposition material or uniform etching or polishing on the semiconductor substrates by retaining the semiconductor substrates on a moving cathode immersed in an appropriate reaction solution wherein a wire mesh anode rotates about the moving cathode during electrochemical reaction.

Abstract: The present invention relates to new methods for delivering solutions during electronic device manufacture. Methods of the invention include delivering metallization solutions to the device at an angle of less than 90 degrees with the surface of the device. The method may further comprise partially treating the device by delivering the metallization solutions from above the device, turning the device over, and then completing treatment by delivering the metallization solutions from below the article. The method is particularly useful in the formation of printed circuit boards and other electronic packaging devices having through-holes and blind vias.

Abstract: In a plating method for successively treating a plating target from a pre-treatment step until a plating treatment, (A) a vibrationally stirring apparatus for a treatment bath, (B) an aeration apparatus for the treatment bath, (C) an apparatus for swinging an electrode bar for suspending the plating target thereon, and (D) an apparatus for applying vibration to the electrode bar, are operated in a cleaning tank and at least one of an electroless plating tank and an electroplating tank used as a treatment tank in the pre-treatment step and the plating step.

Abstract: An apparatus and a method for electroplating for forming a metal film by an electroplating method. The apparatus comprises a plating bath provided in a non-oxidative atmosphere, and in the method, an article to be plated is immersed in a plating bath through a non-oxidative atmosphere.

Abstract: Both a process and plant are provided for electrolytically coating with a metal layer the casting surface of a roll for twin-roll or single-roll continuous casting of thin metal strip. The casting surface is at least partially immersed in an electrolyte solution containing a salt of the metal to be deposited, so as to face at least one anode. The surface is placed at a cathode and a relative movement is created between the casting surface and the electrolyte solution. Insulating masks are interposed between the anode or anodes and the arrises of the casting surface, the insulating masks preventing a concentration of the lines of current on the arrises and in their vicinity.

Abstract: A megasonic plating technique employs a megasonic transducer to create a ridge of electrolyte that extends upward above a plating tray. A chuck holds the substrate to be plated so the face of the wafer is oriented downwards. The megasonic transducer extends along a base of the center part of the tray, and an elongated anode element is positioned above the transducer. Spargers introduce electrolyte into the tray non-turbulently along opposite sides of the transducer. There is a transverse relative motion created between the tray and the chuck so that the ridge of electrolyte sweeps across the face of the substrate.

Abstract: The apparatus according to the invention is used for electrolytically treating a board-shaped substrate to be treated, preferably printed circuit boards, in a continuous system, through which the item to be treated is guidable in a plane of conveyance in a substantially horizontal direction of conveyance, the apparatus having counter-electrodes (2), which are situated substantially parallel to one another opposite the plane of conveyance, and screens (11) for shielding from high current density fields in the edge region of the item to be treated (1), said screens being disposed between the plane of conveyance and the counter-electrodes, the screens each being in the form of at least two flat portions (12,13), which are disposed substantially parallel to each other, one portion (13) of the screens being disposed so as to lie opposite the plane of conveyance, and the other portion (12) being disposed so as to lie opposite the counter-electrodes, and the screens being mounted so as to be displaceable in a direct

Abstract: A transport system for the implementation of electrolytic deposition, coating or etching; and more particularly, an apparatus for selective electrolytic metallization and deposition utilizing a fluid head arrangement. A method is provided for making and maintaining an electrical contact with a product being processed in a transport system employed for selective electrolytic metallization and deposition, coating or etching. The method of making and maintaining an electrical contact with a product being processed may be utilizing a fluid head arrangement.

Abstract: A process and apparatus for forming oxide coatings on bodies of aluminum and aluminum alloys are described. The process includes forming an electrolyte bath in an inert container. At least two reactive metal bodies are suspended in the bath. The bodies are connected to electrodes which, in turn, are connected to a multiphase AC circuit. A multiphase power (preferably three-phase between three bodies) potential is imposed between each of the bodies. The bodies are moved in the electrolyte bath relative to each other until micro-arcs occur on the surfaces of the bodies, whereby to commence oxidation of the bodies. The imposition of the potential between each of the bodies is continued until the desired thickness of oxide is formed on the bodies.

Abstract: The current density with which the process is used is of essential importance for the economy of a method of electrolytically treating materials. Normally only low or medium current densities are used, as the speed of replacement of consumed materials in the direct vicinity of the surface of the material for treatment has a restrictive effect on the magnitude of the current density at which a usable process result can still be achieved. However, a low current density leads to long electrolysis times and to complex treatment installations.

Abstract: A conductive electrode wire is passed through a molten salt bath maintained at a temperature above the melting point of the salts. A main electrical power supply passes an electric current between the electrode wire and an anode in the molten salt bath so that a metal coating layer is electrolytically deposited onto the core of the electrode wire. The high temperature of the molten salt bath ensures inter-diffusion of the metals of the core and the coating. This enables diverse coating structures to be obtained by choosing electrolysis and diffusion parameters.

Abstract: An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thickness of the deposited electrically conductive layer on the edge region. Further, the cylindrical wall of the flange can be provided with a plurality of apertures adjacent the wafer allowing gas bubbles entrapped on the wafer surface to readily escape.

Abstract: The present invention provides an improved method for electroplating metallic ions onto a conductive substrate. In one embodiment, the method comprises at least partially covering a selected surface of the conductive substrate with an electrode wrap that includes a pad having an abrasive surface.The metallic ions are electrically depositing onto the selected surface through the electrode wrap while the conductive substrate is moved (e.g., rotated) relative to the electrode wrap. A substantially constant frictional force is controllably applied from the abrasive surface onto the selected surface while the metallic ions are being deposited. In this manner, a substantially constant abrasive force is applied to the selected surface as the thickness of the deposited metallic coating increases to create a relatively smooth, uniform, thick deposition that is substantially free of defects.

Abstract: An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.

Abstract: An apparatus for measuring the throwing power of electroplating solutions which provides a nearly linear current density distribution across the panel. The apparatus includes a cylindrical body adapted for rotation about a longitudinal axis thereof, a cylindrical cathode arranged coaxially about a central portion of the cylindrical body, an anode coaxially positioned at a lower end portion of the cylindrical body, a conical shield coaxially arranged around an upper end portion of the cathode; and an annular disk-baffle coaxially arranged around a lower end portion of the cathode. The conical shield and the disk-baffle provide a substantially linear current distribution over the cathode.

Abstract: Plating of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly a single metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.

Abstract: In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region.

Abstract: A method and a system are provided for plating workpieces as part of an "on-track" in-line or a radially arranged manufacturing system, including "on-site" measurement of at least one plating characteristic for computer controlled process regulation and quality control. Movement of workpieces between various stations is controlled in response to a comparison of the measured value(s) of the plating characteristic(s) and (a) target value(s) or target range(s) of values.

Abstract: According to aspect of the invention, a plating system is provided which includes a tank for containing a plating solution, a shaft extending into the tank, and a substrate holder mounted to the shaft. The shaft and the tank are rotatable relative to one another. The substrate holder is configured to support a substrate in position so that at least a first face of the substrate is exposed to the plating solution in the tank.

Abstract: A method for electroplating of a substrate traveling in a substrate direction. The method comprises directing a first fluid stream and a second fluid stream respectively across the first and second width portions of the substrate. The first and second fluid streams do not flow substantially cocurrently with nor countercurrently to the substrate direction.

Abstract: A method of manufacturing a permanent magnet rotor comprising a rotor yoke (2) of a rotor (1) which is formed by laminating a large number of steel sheets (4), (14), (24), (34) and (44), has 2n times (n is a positive integer) of magnetic poles (5) on the outer periphery, has slots (6) at the bases of all or every other magnetic poles at a substantially equal distance from a rotatable shaft hole (7), and has permanent magnets (3) for a field inserted into the slots, and a method for producing it. It has a structure that the permanent magnets for the field are prevented from coming out, or the permanent magnets for the field have their faces treated in order to improve the safety and reliability of the permanent magnet rotor.

Abstract: An electroplating system includes shield(s) to control the thickness profile of a metal electrodeposited onto a substrate. The shield(s) are positioned between the anode and the cathode in a standard electroplating apparatus with a device for rotating the plating surface. The cathode is rotated so that the shield(s) in conjunction with the rotation of the cathode selectively alters or modulates a time average of the electric field characteristics between the anode and the cathode. The modulated electric field is used to control the electrodeposition rate at selected area(s) of the plating surface of the cathode, thereby causing the metal deposited on the cathode to have a modified thickness profile.

Abstract: A rotary plater and method of plating are provided which improve the uniformity of plating across a plating surface of a workpiece. A plating solution distribution device is located in a plating cup between an anode and a cathode in a spaced relationship therebetween and is centered about a vertical axis of the plating cup. A motor is provided for relatively rotating the cathode and the plating solution distribution device with respect to one another. The plating solution distribution device distributes the plating solution over the plating surface at a distribution rate which increases radially outwardly from the vertical axis. With this arrangement the volume of plating solution at the outer periphery of the plating surface is enriched with ions to promote plating uniformity.

Abstract: Process for electrolytic treatment of continuous running material in which the material runs through an electrolytic liquid and electric potential is applied to the material. In order to guarantee freedom from differential potential in the material to be treated in any form of electrolytic treatment, the differential potential in the treated material is measured after electrolytic treatment and at least the same degree of inverse compensating potential is applied to the material.

Abstract: The invention relates to a method and device for electroplating plate-shaped product, particularly printed circuit boards, in horizontal continuous plants with optional sequence of product, revolving contacting means serving for electrical connection of a source of bath current via wiper rails with the product, and the beginning and end of each individual product item at the inlet to the electroplating plant, and the transport speed of the product, being detected with the aid of sensors, said sensors sending sensor signals to a control system which ascertains whether a product item is present at the gripping point of the contacting means or not, the contacting means being connected electrically and in the electroplating sense in a low-resistance manner to the sources of bath current only when product is present in the region of contacts of the contacting means.

Abstract: An apparatus and method for electroplating and deplating a rotogravure cylinder out of a plating solution using ultrasonic energy is disclosed. The apparatus includes a plating tank adapted to rotatably maintain the cylinder and to contain a plating solution so that the cylinder is at least partially disposed into the plating solution. The apparatus also includes a mounting structure mountable within the tank partially on each side of and generally below the cylinder, along with a plurality of conductors at least partially disposed within the plating solution. A current source is electrically connected to the upper portions of the conductors and to the cylinder. An ultrasonic system to introduce wave energy into the plating solution includes at least one transducer element mountable within the tank and a power generator adapted to provide electrical energy to the transducer element. A holding tank having a circulating pump and heating and cooling elements for the plating solution may be provided.

Abstract: Gas shielding is employed to prevent metal plating on contacts during electroplating to reduce particulate contamination and increase thickness uniformity. In another embodiment, gas shielding is employed to prevent deposition on the backside and edges of a semiconductor wafer during plating.

Abstract: An electrochemical reaction assembly and methods of inducing electrochemical reactions, such as for deposition of materials on semiconductor substrates. The assembly and method achieve a highly uniform thickness and composition of deposition material or uniform etching or polishing on the semiconductor substrates by retaining the semiconductor substrates on a moving cathode immersed in an appropriate reaction solution wherein a wire mesh anode rotates about the moving cathode during electrochemical reaction.

Abstract: A new field of technology, near-field photolithography, is proposed. In near-field photolithography, an opaque pattern having a nanoscale resolution is made using a modified scanning tunneling microscope to deposit the opaque material on an electrically conductive material. A transparent sheet of indium tin oxide is patterned with a plurality of opaque copper deposits having a nanoscale resolution. The patterned indium tin oxide is then used as a photolithographic mask in the optical near-field. Near-field resolution is not diffraction limited, and near-field photolithography is able to pattern objects with sub-wavelength resolution. As a result, smaller semiconductor microchips can be manufactured and a new nanotechnology, e.g., nanomachines, can be developed. The scanning tunneling microscope (STM) is used as an "electrochemical paintbrush" to transfer the copper from a massive copper supply to the STM electrode tip and then to the ITO surface without degrading the STM tip.

Abstract: A method and an apparatus for thermal process control in electroforming stampers for the production of CD/LD data carriers or the like. The temperature of an electrolytic solution in an electroforming cell is maintained at a value nearest a specific maximum temperature by raising or lowering the temperature of the electrolytic solution in a storage tank provided outside of the electroforming cell as a function of the temperature measured in a cathode space of the electroforming cell. A temperature sensor is disposed in or near the cathode space adjacent an electrolyte injection nozzle in a space between the anode and cathode means for supplying signals to a control unit. The temperature sensor and the injection nozzle are preferably assembled into a single mounting unit. The electroforming process can thus be run with an optimum effectivity in the vicinity of a maximum permissible temperature of the electrolytic solution.

Abstract: An apparatus for simultaneously anodizing the heads of several aluminum pistons includes a plating tank with an array of apertures extending through one side wall, one aperture for each piston; a fixture on the wall providing a cylindrical bore aligned with each aperture adapted to receive a piston; and a plurality of actuators which, when pivoted and locked into alignment with the fixture bores, operate to secure individual pistons in their respective apertures. A masking/sealing assembly within each fixture bore ensures that each aperture is sealed upon the securing of a piston therein, with only the piston's head and peripheral land being placed in fluid communication with the interior of the plating tank. A remote storage tank provides a supply of an electrolyte which is circulated by a fluid supply network between the storage tank and the thus-sealed plating tank during electrolysis. After the desired coating is achieved, the electrolyte is drained from the tank.