Abstract: A semiconductor package that stably protects an internal semiconductor chip from external shocks, and a method of manufacturing the semiconductor package is disclosed. The semiconductor package includes a first semiconductor chip including a first body layer having a first surface, a second surface, and a lateral surface between the first surface and the second surface, and a first protective layer that exposes an edge portion of the first surface and forms a step difference with the first surface; an encapsulation structure that covers a lateral surface of the first body layer and the edge portion of the first surface so as to encapsulate the first semiconductor chip to have a locking structure; and a first conductive terminal formed on the first body layer through the protective layer.

Abstract: A semiconductor device has a first semiconductor wafer mounted to a carrier. A second semiconductor wafer is mounted to the first semiconductor wafer. The first and second semiconductor wafers are singulated to separate stacked first and second semiconductor die. A peripheral region between the stacked semiconductor die is expanded. A conductive layer is formed over the carrier between the stacked semiconductor die. Alternatively, a conductive via is formed partially through the carrier. A bond wire is formed between contact pads on the second semiconductor die and the conductive layer or conductive via. An encapsulant is deposited over the stacked semiconductor die, bond wire, and carrier. The carrier is removed to expose the conductive layer or conductive via and contact pads on the first semiconductor die. Bumps are formed directly on the conductive layer and contact pads on the first semiconductor die.

Abstract: A stacked integrated circuit package-in-package system is provided including forming a first external interconnect; mounting a first integrated circuit die below the first external interconnect; stacking a second integrated circuit die over the first integrated circuit die in an offset configuration not over the first external interconnect; connecting the first integrated circuit die with the first external interconnect; and encapsulating the second integrated circuit die with the first external interconnect and the first integrated circuit die partially exposed.

Abstract: A chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. Tx terminals are grouped contiguously to each other, and are segregated as a group to a given edge of the package, Rx terminals are similarly grouped and segregated to a different edge of the package. Tx and Rx data channels are disposed in a respective single layer of the package, or both are disposed in a same single layer of the package. Rx ports and Tx ports are located at an approximate center of the package, with Tx and Rx ports disposed on respective opposite sides of an axis bisecting the package. Data signals received by, and transmitted from, the chip flow in a same direction, from a first edge of the package to the center of the package and from the center of the package to a second edge of the package, respectively.

Abstract: An electrode connection structure of a semiconductor chip is provided to realize a highly reliable electrical connection with low stress without using a bump. A conductive member may be used for such an electrode connection structure. A semiconductor device is provided wherein semiconductor chips are arranged in layers without providing the semiconductor chips with a through via, and a method is provided for manufacturing such a semiconductor device. A part or all of the surface of a horizontal recess, which is formed in an adhesive layer arranged between a first electrode of a lower layer and a second electrode of an upper layer, is provided with a conductive member for connecting the first electrode and the second electrode.

Abstract: Disclosed are a semiconductor apparatus and a manufacturing method thereof. The manufacturing method of the semiconductor apparatus includes: forming a semiconductor chip on a semiconductor substrate; adhering a carrier wafer with a plurality of through holes onto the semiconductor chip; polishing the semiconductor substrate; forming a first via hole at the rear side of the polished semiconductor substrate; forming a first metal layer below the polished semiconductor substrate and at the first via hole; and removing the carrier wafer from the polished semiconductor substrate.

Abstract: A test structure may characterize the properties of a transistor including a DC test structure for testing DC properties of the transistor, and an AC test structure for testing AC properties of the transistor. The DC and AC test structures may have common test pads.

Abstract: A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.

Abstract: A chip scale package implements solder bars to form a connection between a chip and a trace, formed in a substrate, such as another chip or PCB. Solder bars are formed by depositing one or more solder layers into the socket, or optionally, depositing a base metal layer into the socket and applying the solder layer to the base metal layer. The geometry of a solder bars may be rectangular, square, or other regular or irregular geometry. Solder bars provide a greater utilization of the connectivity footprint and increase the electrical and thermal flow capacity. Solder bars also provide a robust connection.

Abstract: A via structure includes at least a first via set and a second via set electrically connected to the first via set. There is at least one via in the first via set and at least one via in the second via set. The via in the first via set has a cross-sectional area which is larger than that of the via in the second via set.

Abstract: A semiconductor device includes a plurality of protrusions formed on a first face of the semiconductor device; first bonding portions formed on upper portions of the plurality of protrusions; second bonding portions formed on side faces of the plurality of protrusions; and third bonding portions formed on the first face between the plurality of protrusions, wherein the semiconductor device is configured to bond to an other semiconductor device through the third from the first bonding portions.

Abstract: An integrated circuit fabrication is disclosed, and more particularly a field effect transistor with a low resistance metal gate electrode is disclosed. An exemplary structure for a metal gate electrode of a field effect transistor comprises a lower portion formed of a first metal material, wherein the lower portion has a recess, a bottom portion and sidewall portions, wherein each of the sidewall portions has a first width; and an upper portion formed of a second metal material, wherein the upper portion has a protrusion and a bulk portion, wherein the bulk portion has a second width, wherein the protrusion extends into the recess, wherein a ratio of the second width to the first width is from about 5 to 10.

Abstract: An example of a semiconductor device according to the present invention includes: a protective film (1) which has an opening to expose a part of the surface of an electrode pad (4) and covers the surface of the electrode pad (4) excluding the opening; and a bump (6) which is electrically connected with the electrode pad (4) through the opening of the protective film (1) and has a part exposed outside within the area of the electrode pad (4), wherein probe marks (7) are formed by a probe brought into contact with the electrode pad (4) for electrical characteristic inspection, and the probe marks (7) are positioned within a region where the protective film (1) is formed and are covered by the protective film (1).

Abstract: A plurality of semiconductor chips may be stacked on the substrate, and each of them may include at least one electrode pad. At least one of the plurality of semiconductor chips may include at least one redistribution pad configured to electrically connect with the at least one electrode pad.

Abstract: Methods of forming a metal silicide region in an integrated circuit are provided herein. In some embodiments, a method of forming a metal silicide region in an integrated circuit includes forming a silicide-resistive region in a first region of a substrate, the substrate having the first region and a second region, wherein a mask layer is deposited atop the substrate and patterned to expose the first region; removing the mask layer after the silicide-resistive region is formed in the first region of the substrate; depositing a metal-containing layer on a first surface of the first region and a second surface of the second region; and annealing the deposited metal-containing layer to form a first metal silicide region in the second region.

Abstract: A wiring substrate in which a semiconductor element is built includes a semiconductor element; a peripheral insulating layer covering at least an outer circumferential side surface of this semiconductor element; and an upper surface-side wiring line provided on the upper surface side of the wiring substrate. The semiconductor element includes an internal terminal electrically connected to the upper surface-side wiring line on the upper surface side of the semiconductor element. This internal terminal includes a first conductive part exposed out of an insulating surface layer of the semiconductor element; an adhesion layer on this first conductive part; and a second conductive part on this adhesion layer.

Abstract: An assembly of nanoelements forms a three-dimensional nanoscale circuit interconnect for use in microelectronic devices. A process for producing the circuit interconnect includes using dielectrophoresis by applying an electrical field across a gap between vertically displaced non-coplanar microelectrodes in the presence of a liquid suspension of nanoelements such as nanoparticles or single-walled carbon nanotubes to form a nanoelement bridge connecting the microelectrodes. The assembly process can be carried out at room temperature, is compatible with conventional semiconductor fabrication, and has a high yield. The current-voltage curves obtained from the nanoelement bridge demonstrate that the assembly is functional with a resistance of ?40 ohms for gold nanoparticles. The method is suitable for making high density three-dimensional circuit interconnects, vertically integrated nanosensors, and for in-line testing of manufactured conductive nanoelements.

Abstract: An SiP (semiconductor device) using a stacked packaging method for stacking a microcomputer IC chip over a driver IC chip in which circuits sensitive to heat or noise, including an analog to digital conversion circuit, a digital to analog conversion circuit, a sense amplifier circuit of a memory (RAM or ROM), or a power supply circuit of a microcomputer IC chip, are prevented from two-dimensionally overlapping with a driver circuit of the lower-side driver IC chip to reduce, during the operation, the effect of heat or noise, which the circuits sensitive to heat or noise of the microcomputer IC chip receive from the driver circuit of the lower-side driver IC chip, thereby improving the operation stability of the SiP (semiconductor device) using the stacked packaging method.

Abstract: A bonding pad structure for an optoelectronic device. The bonding pad structure includes a carrier substrate having a bonding pad region and an optoelectronic device region. An insulating layer is disposed on the carrier substrate, having an opening corresponding to the bonding pad region. A bonding pad is embedded in the insulating layer under the opening to expose the top surface thereof. A device substrate is disposed on the insulating layer corresponding to the optoelectronic device region. A cap layer covers the device substrate and the insulating layer excluding the opening. A conductive buffer layer is disposed in the opening to directly contact the bonding pad. The invention also discloses a method for fabricating the same.

Abstract: In an embodiment, a wafer level package may be provided. The wafer level package may include a device wafer including a MEMS device, a cap wafer disposed over the device wafer, at least one first interconnect disposed between the device wafer and the cap wafer and configured to provide an electrical connection between the device wafer and the cap wafer, and a conformal sealing ring disposed between the device wafer and the cap wafer and configured to surround the at least one first interconnect and the MEMS device so as to provide a conformally sealed environment for the at least one first interconnect and the MEMS device, wherein the conformal sealing ring may be configured to conform to a respective suitable surface of the device wafer and the cap wafer when the device wafer may be bonded to the cap wafer. A method of forming a wafer level package may also be provided.

Abstract: Semiconductor device modules having two or more integrated circuit dies mounted on opposing sides of a substrate. The integrated circuit dies are mounted by use of surface mount connections, such as flip chip connections implemented using conductive bumps. Systems may include one or more of the present semiconductor device modules, and in some cases may also include other modules, such as a system module.

Abstract: A multi-channel package has at least four channels and includes a package substrate having a first surface and a second surface, semiconductor chips mounted on the first surface of the package substrate, and external connection terminals disposed on the second surface of the package substrate and electrically connected to the semiconductor chips by the at least four channels. Each channel is dedicated to one or a group of the chips. An electronic system includes a main board, at least one such multi-channel package mounted on the main board, and a controller package that is mounted on the main board, has 4n channels (wherein n?2) and controls the at least one multi-channel package.

Abstract: A semiconductor device including a plurality of copper interconnects. At least a first portion of the plurality of copper interconnects has a meniscus in a top surface. The semiconductor device also includes a plurality of air gaps, wherein each air gap of the plurality of air gaps is located between an adjacent pair of at least the first portion of the plurality of bit lines.

Abstract: A contact pad for an electronic device integrated in a semiconductor material chip is formed from a succession of protruding elements. Each protruding element extends transversally to a main surface of the chip and has a rounded terminal portion. Adjacent pairs protruding elements define an opening which is partially filled with a first conductive material to form a contact structure that is in electrical contact with an integrated electronic device formed in the chip. A layer of a second conductive material is deposited to cover said protruding elements and the contact structures so as to form the contact pad.

Abstract: The chip stack of semiconductor chips with enhanced cooling apparatus includes a first chip with circuitry on a first side and a second chip electrically and mechanically coupled to the first chip by a grid of connectors. The apparatus further includes a thermal interface material pad placed between the first chip and the second chip, wherein the thermal interface material pad includes nanofibers aligned parallel to mating surfaces of the first chip and the second chip. The method includes creating a first chip with circuitry on a first side and creating a second chip electrically and mechanically coupled to the first chip by a grid of connectors. The method further includes placing a thermal interface material pad between the first chip and the second chip, wherein the thermal interface material pad includes nanofibers aligned parallel to mating surfaces of the first chip and the second chip.

Abstract: Methods of directly bonding a first semiconductor structure to a second semiconductor structure include directly bonding at least one device structure of a first semiconductor structure to at least one device structure of a second semiconductor structure in a conductive material-to-conductive material direct bonding process. In some embodiments, at least one device structure of the first semiconductor structure may be caused to project a distance beyond an adjacent dielectric material on the first semiconductor structure prior to the bonding process. In some embodiments, one or more of the device structures may include a plurality of integral protrusions that extend from a base structure. Bonded semiconductor structures are fabricated using such methods.

Abstract: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

Abstract: In a method of manufacturing a semiconductor package including a wire binding process, a first end of the bonding wire is bonded to a first pad so as to form a first bond portion. A second end of the bonding wire is bonded to a second pad, wherein an interface surface between the bonding wire and the second pad has a first connecting area. The bonded second end of the bonding wire is scrubbed so as to form a second bond portion, wherein a new interface surface between the bonding wire and the second pad has a second connecting area larger than the first connecting area. A remainder of the bonding wire is separated from the second bond portion.

Abstract: A packaged semiconductor device has a metal plate (1200) with sawed sides (1200c), a flat first surface (1200a) and a parallel second surface (1200b); the plate is separated into a first section (1201) and a second section (1202) spaced apart by a gap (1230). The plate has on the second surface (1200b) at least one insular mesa (1205) of the same metal in each section, the mesas raised from the second plate surface. The device further has an insulating member (1231), which adheres to the first plate surface, bridges the gap, and thus couples the first and second sections together. The device further has a vertical stack (1270) of two power FET chips (1210) and (1220), each having a pair of terminals on the first chip surface (1211 and 1212; 1221 and 1222 respectively) and a single terminal on the second chip surface. The single terminals of chip (1210) and chip (1220) are attached to each other to form the common terminal (1240).

Abstract: Multi-chip quad flat no-lead (QFN) packages and methods for making the same are disclosed. A multi-chip package may include a first die including a plurality of first bond pads, wherein selected first bond pads are wire-bonded to a first side of a leadframe, and a second die mounted on the first die and including a plurality of second bond pads, wherein selected second bond pads are wire-bonded to a second side, opposite the first side, of the leadframe. Another package may include a first die including a plurality of first bond pads, wherein selected first bond pads are wire-bonded to a first side of a leadframe, and a second die flip-chip mounted on a second side of the leadframe and including a plurality of second bond pads, wherein selected second bond pads are bonded to the second side of the leadframe. Other embodiments are also described.

Abstract: A microelectronic package can include a substrate having first and second opposed surfaces, at least two pairs of microelectronic elements, and a plurality of terminals exposed at the second surface. Each pair of microelectronic elements can include an upper microelectronic element and a lower microelectronic element. The pairs of microelectronic elements can be fully spaced apart from one another in a horizontal direction parallel to the first surface of the substrate. Each lower microelectronic element can have a front surface facing the first surface of the substrate and a plurality of contacts at the front surface. A surface of each of the upper microelectronic elements can at least partially overlie a rear surface of the lower microelectronic element in its pair. The microelectronic package can also include electrical connections extending from at least some of the contacts of each lower microelectronic element to at least some of the terminals.

Abstract: A semiconductor device has a first conductive layer formed over a substrate. A first insulating layer is formed over the substrate and first conductive layer. A second conductive layer is formed over the first conductive layer and first insulating layer. A second insulating layer is formed over the first insulating layer and second conductive layer. The second insulating layer has a sidewall between a surface of the second insulating material and surface of the second conductive layer. A protective layer is formed over the second insulating layer and surface of the second conductive layer. The protective layer follows a contour of the surface and sidewall of the second insulating layer and second conductive layer. A bump is formed over the surface of the second conductive layer and a portion of the protective layer adjacent to the second insulating layer. The protective layer protects the second insulating layer.

Abstract: In a chip package, semiconductor dies in a vertical stack of semiconductor dies or chips (which is referred to as a ‘plank stack’) are aligned by positive features that are mechanically coupled to negative features recessed below the surfaces of adjacent semiconductor dies. Moreover, the chip package includes an interposer plate at approximately a right angle to the plank stack, which is electrically coupled to the semiconductor dies along an edge of the plank stack. In particular, electrical pads proximate to a surface of the interposer plate (which are along a stacking direction of the plank stack) are electrically coupled to pads that are proximate to edges of the semiconductor dies by an intervening conductive material, such as solder balls or spring connectors. Note that the chip package may facilitate high-bandwidth communication of signals between the semiconductor dies and the interposer plate.

Abstract: A semiconductor device has a first insulating layer formed over a substrate. The substrate has a plurality of conductive layers and plurality of second insulating layers formed between the conductive layers. The substrate can be a PCB or interposer. A plurality of openings is formed in the first insulating layer by etching or laser direct ablation. A semiconductor die has a plurality of bumps formed over a surface of the semiconductor die. The pattern of openings coincides with a pattern of the bumps. The die is mounted to the substrate with the bumps disposed within the openings in the first insulating layer. Alternatively, a conductive paste can be disposed within the openings in the first insulating layer. The bumps are reflowed to electrically connect the die to the first substrate. The bumps are substantially contained within the openings of the first insulating layer to reduce bridging between adjacent bumps.

Abstract: In an embodiment, a semiconductor device includes a semiconductor substrate. The semiconductor substrate has a first cavity disposed through it, and conductive material covers at least the bottom portion of the first cavity. An integrated circuit is disposed on the top surface of the conductive material. The device further includes a cap disposed on the top surface of the substrate, such that a cavity disposed on a surface of the cap overlies the first cavity in the substrate.

Abstract: A circuit board structure with an embedded semiconductor chip and a fabrication method thereof are provided, including the steps of providing a semiconductor wafer having an active surface with a plurality of electrode pads, a connection metal layer formed on the electrode pads: forming a protective layer on the connection metal layer and the semiconductor wafer, performing a cutting process to form a plurality of semiconductor dies, providing a carrier board having at least one cavity for receiving the semiconductor chip; and forming sequentially on the protective layer covering the semiconductor chip and the carrier board a dielectric layer and a circuit layer electrically connected to the connection metal layer of the semiconductor chip. The present invention is a simple, in process and low in process cost, due to the connection metal layer covered by the protective layer formed on the semiconductor chip protected from oxidation and contamination.

Abstract: The present invention provides a semiconductor structure and a manufacturing method thereof. The method comprises: providing a semiconductor substrate comprising semiconductor devices; depositing a copper diffusion barrier layer on the semiconductor substrate; forming a copper composite layer on the copper diffusion barrier layer; decomposing the copper composite at corresponding positions, where copper interconnection is to be formed, into copper according to the shape of the copper interconnection; and etching off the undecomposed copper composite and the copper diffusion barrier layer underneath, to interconnect the semiconductor devices. The present invention is adaptive for manufacturing interconnection in integrated circuits.

Abstract: A chip-stacked semiconductor package including a stacked chip structure including a plurality of separate chips stacked on each other; a flexible circuit substrate having the stacked chip structure mounted on a first side of the flexible circuit substrate in a first region of the flexible circuit substrate, and being electrically connected to at least one of the plurality of separate chips of the stacked chip structure by folding a second region of the flexible circuit substrate; a sealing portion sealing the stacked chip structure and the flexible circuit substrate; and an external connecting terminal on a second side of the flexible circuit substrate.

Abstract: In one implementation, an apparatus includes a semiconductor die, a lead, a non-conductive epoxy, and a conductive epoxy. The semiconductor die includes an upper surface and a lower surface opposite the upper surface. The lead is electrically coupled to the upper surface of the semiconductor die. The non-conductive epoxy is disposed on a first portion of the lower surface of the semiconductor die. The conductive epoxy is disposed on a second portion of the lower surface of the semiconductor die. In some implementations, a conductive wire extends from the lead to the upper surface of the semiconductor die to electrically couple the lead to the upper surface of the semiconductor die.

Abstract: A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material. Resulting semiconductor device structures are also disclosed, as are compositions used to form the semiconductor device structures.

Abstract: A semiconductor device package including a substrate, first and second solder joints, a die pad, leads and enhancement elements surrounding the die pad, a chip electrically connected to the leads, and a package body encapsulating the chip, portions of the leads, and portions of the enhancement elements, but leaving exposed at least a side surface of each enhancement element. Side surfaces of the enhancement elements and the package body are coplanar. The substrate includes first pads corresponding to the leads and second pads corresponding to the enhancement elements. The first solder joints are disposed between the first pads and the leads. The second solder joints are disposed between the second pads and the enhancement elements. The second solder joints contact side surfaces of the enhancement elements. The surface area of the second pads is greater than the surface area of the corresponding enhancement elements.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor element mounting unit, a first conductor, a semiconductor element, a first connection and a second connection. The first conductor is provided around the semiconductor element mounting unit. The semiconductor element is provided on the semiconductor element mounting unit and includes a first switch element and a second switch element provided parallel to the first switch element. The first connection and the second connection are provided on the first switch element side of an imaginary boundary line obtained by extending a boundary between the first switch element and the second switch element. The first connection and the second connection are electrically connected to the first switch element and the second switch element, respectively, and electrically connected to the first conductor.

Abstract: An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material.

Abstract: A semiconductor device (130) including: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90a) bonded to the bonding substrate (100), the semiconductor element including a semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on a side of the semiconductor element main body facing the bonding substrate (100), wherein the underlying layer (54) closest to the bonding substrate (100) includes an extended section (E) formed by extending the circuit pattern toward the thin film element (80), a resin layer (120) is provided between the thin film element (80) and the semiconductor element (90a), and the thin film element (80) is connected to the semiconductor element main body (50) via a connection line (121a) provided on the resin layer (120), the extended section (E), and the circuit patterns.

Abstract: A method for fabricating a semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer comprises metal interconnects therein; forming a top metal layer on the dielectric layer; and forming a passivation layer on the top metal layer through high-density plasma chemical vapor deposition (HDPCVD) process.

Abstract: An electronic component includes a semiconductor chip with an active front face and a passive rear face, with contact connections and contact surfaces respectively being provided on the active front face and/or on the passive rear face, and with conductive connections being provided in the form of structured conductive tracks for providing an electrical connection from the active front face to the passive rear face. An electronic assembly formed of stacked semiconductor chips, and a method for producing the electronic component and the electronic assembly are also provided.

Abstract: A microelectronic assembly that includes a first microelectronic element having a first rear surface. The assembly further includes a second microelectronic element having a second rear surface. The second microelectronic element is attached to the first microelectronic element so as to form a stacked package. A bridging element electrically connects the first microelectronic element and the second microelectronic element. The first rear surface of the first microelectronic element faces toward the second rear surface of the second microelectronic element.

Abstract: There are constituted by a tab on which a semiconductor chip is mounted, a sealing portion formed by resin-sealing the semiconductor chip, a plurality of leads each having a mounted surface exposed to a peripheral portion of a rear surface of the sealing portion and a sealing-portion forming surface disposed on an opposite side thereto, and a wire for connecting a pad of the semiconductor chip and a lead, wherein the length between inner ends of the sealing-portion forming surfaces of the leads disposed so as to oppose to each other is formed to be larger than the length between inner ends of the mounted surfaces. Thereby, a chip mounting region surrounded by the inner end of the sealing-portion forming surface of each lead can be expanded and the size of the mountable chip is increased.

Abstract: A stack package includes a first package having a first semiconductor chip and a first encapsulation member which seals the first semiconductor chip. A second package is stacked on the first package, and includes a second semiconductor chip and a second encapsulation member which seals the second semiconductor chip. Flexible conductors are disposed within the first encapsulation member of the first package in such a way as to electrically connect the first package and the second package.

Abstract: A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.