Abstract: A substrate (1) made of a transparent material, preferably glass, which substrate has a planar first side (1a) for the application of an electroluminescent layered structure (21, 22, 23) for emitting light and having a structured second side (1b) for the effective coupling-out of light (6), comprising at least one element of structure (2) comprising first regions (3) having first surfaces (3a) that have a surface roughness of between 0.2 ?m and 100 ?m, and preferably of between 0.4 ?m and 70 ?m, and as a particular preference of between 0.7 ?m and 40 ?m.

Abstract: In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.

Abstract: An electro-optical device that includes a transistor and an insulating film over the semiconductor layer of the transistor. The insulating film has an opening portion that overlaps the channel region. The gate electrode of the transistor includes a body portion arranged in the opening portion of the insulating film and an elongated portion that extends onto the insulating film so as to cover the second junction portion of the transistor. The second junction region is located in an intersection region of a non-aperture region of the display pixel.

Abstract: A light emitting device having a monolithic protection element and a method of fabricating the light emitting device are provided. The light emitting device includes: a light emitter having a cathode and an anode; and the resistive protection element connected to the light emitter in parallel through the cathode and the anode. Here, a resistance Rs of the resistive protection element has a value between a forward resistance Rf and a reverse resistance Rr of a current of the light emitter.

Abstract: Provided is an array substrate of an LCD that includes a substrate, an active layer, a first insulating layer, and a gate electrode sequentially formed on the substrate. A source region and a drain region reside in predetermined regions of the active layer and each is doped with impurity ions. A second insulating layer overlies an entire surface of the substrate including the gate electrode. A pixel electrode resides on the second insulating layer. First and second contact holes reside in the first and second insulating layer and expose portions of the source region and the drain region, respectively. A portion of a source electrode contacts the source region through the first contact hole and a first portion of a drain electrode contacts the drain region and a second portion contacts the pixel electrode.

Abstract: A flip chip type LED lighting device manufacturing method includes the step of providing a strip, the step of providing a submount, the step of forming a metal bonding layer on the strip or submount, the step of bonding the submount to the strip, and the step of cutting the structure thus obtained into individual flip chip type LED lighting devices.

Abstract: A pixel may include a light emitting element, a first transistor, a second transistor, a storage capacitor, and a third transistor. The first transistor may be configured to transfer a data signal to a data line when a scan signal is supplied to a scan line. The second transistor may be configured to supply a predetermined electric current from a first power supply to a second power supply through the light emitting element. The storage capacitor may be charged with a voltage corresponding to the data signal, one terminal being coupled to a gate electrode of the first transistor, and another terminal being coupled to the organic light emitting diode. The third transistor may supply a voltage of a reference power supply to the light emitting element when the scan signal is supplied to the scan line.

Abstract: Source driver IC chips 3 are mounted on flexible substrates 7a and 7b. A source input pattern, to which a source driver signal is inputted, and a source output pattern, from which a source drive signal is outputted, are formed on the flexible substrates 7a and 7b. An end portion of the source input pattern is connected to a printed circuit board 5. Moreover, an end portion of the source output pattern is connected to a glass substrate 2. A gate driver transmission pattern for transmitting gate driver signals, which are outputted from a signal processing IC 4, to the glass substrate 2 is formed on the flexible substrate 7a. In this liquid display apparatus, a gate driver IC chip 6, which is formed by using monocrystalline silicon and has a gate driver circuit integrated thereon, is COG-mounted on the glass substrate 2.

Abstract: An organic light emitting diode display includes an insulating layer, a stress buffer disposed on the insulating layer, a first electrode disposed on the stress buffer, an organic light emitting member disposed on the first electrode, and a second electrode disposed on the organic light emitting member.

Abstract: A manufacturing method of a display panel for an LCD includes forming a gate line on a flexible insulation substrate, depositing a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer and forming a data line and a drain electrode on the semiconductor layer and the gate insulating layer. The forming the semiconductor layer may be performed by PECVD at about 100° C. to about 180° C., the gate insulating layer may have a thickness of about 2000 ? to about 5500. The method may further include performing hydrogen plasma treatment on the gate insulating layer after the depositing the gate insulating layer and annealing the substrate having the plurality of thin films after the forming the data line and the drain electrode. The insulation substrate may include PES.

Abstract: One embodiment of the invention relates to a method of manufacturing a light emitting diode. The method includes forming an insulating layer on an area, not covered by a seed layer, of at least one of a p-type semiconductor layer and an n-type semiconductor layer, wherein the impurity concentration varies on the surface of the area; and immersing at least part of the seed layer into an electrolyte having metal ions which tend to reduce and deposit on the seed layer under no bias voltage.

Abstract: The present invention provides an light-emitting element in which an organic compound layer containing a carbonate, for example Cs2CO3 and Li2CO3, as a dopant is in substantially electrical contact with a cathode by providing an organic compound layer having a dopant easy in handling so as to bring the organic compound layer into contact with the cathode. The light-emitting element includes a pair of electrodes sandwiching the organic compound layer, which is a co-evaporation layer of an organic compound and the carbonate.

Abstract: A method for producing an LED package is provided, the LED package includes an LED die, which has a light-emitting surface, a non-light-emitting surface opposite to the light-emitting surface, a first electrode and a second electrode arranged on the non-light-emitting surface, a reverse-voltage protection member arranged on the non-light-emitting surface of the LED die, a conductive member electrically connecting the respective electrode of the LED die and the respective pole of the reverse-voltage protection member, and two outer conductive members electrically connecting the selected electrode or pole to an exterior circuit. Wherein the reverse-voltage protection member has a first pole that is the first polarity and a second pole that is the second polarity; the polarity of each pole of the reverse-voltage protection member is opposite to that of the electrode of the LED die.

Abstract: A light emitting diode (LED) covered with a reflective layer by imprinting process is provided. The imprinting process includes coating a plastic layer on a mold to form an imprinting substrate; coating a reflective layer on the plastic layer and modifying the shape of the reflective layer to fit the shape of outer surfaces of the light emitting diode; softening the plastic layer and impressing the mold covered with the reflective layer upon the LED structure so that the reflective layer adheres to the surfaces of LED; and removing the mold. Because the reflective layer has high reflectivity, the light emitted from the top surface and side surfaces of LED is reflected back to the light extraction direction, and thereby the light extraction efficiency is enhanced.

Abstract: A light emitting device has a light emitting element and an adhesion layer to bond the light emitting element to a mounting member. The adhesion layer is of inorganic material particles and a transparent inorganic binding layer to be formed between the neighboring inorganic material particles, and the inorganic material particles are substantially connected with each other in the adhesion layer. Another light emitting device has a light emitting element and a phosphor layer that radiates fluorescent light while being excited by light emitted from the light emitting element. The phosphor layer is of phosphor particles and transparent inorganic binding layer to be formed between the neighboring phosphor particles.

Abstract: A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon. The energy band-modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming at least one pair of oppositely-doped regions in the superlattice defining at least one semiconductor junction.

Abstract: A sideway-emission light emitting diode includes a light emitting diode package comprised of a light emitting diode dice that gives off light and a lens that is positioned in front of a front end face of the package for receiving the light and redirecting the received light toward a circumference of the package and a light guide comprised of a board defining a cavity to receive and retain the light emitting diode package therein. The board has opposite sides each forming a cut-off delimited by opposite inclined edges, a refraction section extending from each inclined edge, and a projection section formed between opposite refraction sections, whereby light transmitting into the light guide is directed, by means of the reflection/refraction by the inclined edges, the refraction sections and the projection sections, toward and projected from the projection sections in sideway directions.