Abstract: A plasma processing apparatus for plasma processing a substrate comprising includes a chamber having one or more walls, in which a portion of the walls of the chamber is an electrode structure formed from a metallic material and configured to act as a primary winding of an inductively coupled plasma source, and an electrical signal supply device for supplying an electrical signal that drives the electrode structure as a primary winding of an inductively coupled plasma source to sustain an inductively coupled plasma within the chamber.

Abstract: The invention relates to a method (S) for generating a plurality of cold-plasma jets at atmospheric pressure in order to treat a target (2), wherein said method includes the following steps: producing (S1) a primary cold-plasma jet (3) at atmospheric pressure using a plasma source (10); placing (S2) a substrate (20, 21, 30, 32, 34) near the target (2) to be treated, said substrate (20, 21, 30, 32, 34) including at least two through-holes; and passing (S3) the plasma through the through-holes (22) of the substrate (20) such as to generate at least two secondary cold-plasma jets (4) at atmospheric pressure.

Abstract: A plasma impedance matching unit for a plasma power supply system includes a first power connector for coupling the matching unit to a RF power source, a second power connector for coupling the matching unit to a plasma load, a data link interface for directly coupling the matching unit to another plasma impedance matching unit via a data link, and a controller configured to control the matching unit to match an impedance from the first power connector to an impedance at the second power connector, to operate as a master for at least one other impedance matching unit and/or at least one RF power source of the plasma power supply system, and to communicate via the data link interface with the at least one other impedance matching unit and/or the at least one RF power source of the plasma power supply system.

Abstract: A surgical instrument system and method are disclosed. The surgical instrument system includes an instrument case and a charging plate that may be placed in a sterile surgical field. The charging plate is configured to receive electrical power from outside the sterile surgical field and transmit that electrical power to other devices within the sterile field.

Abstract: A plasma generation device and/or a plurality of plasma generation modules are provided. Responsive to a first plasma generation module of the plurality of plasma generation modules being attached to the plasma generation device, the plasma generation device is configured to supply a first voltage to a first electrode of the first plasma generation module and conduct process gas from a tank to the first plasma generation module in order to generate a first type of plasma at the first plasma generation module. Alternatively and/or additionally, responsive to a second plasma generation module of the plurality of plasma generation modules being attached to the plasma generation device, the plasma generation device is configured to supply a second voltage to a second electrode of the second plasma generation module in order to generate a second type of plasma at the second plasma generation module.

Abstract: Systems and methods for frequency and match tuning in one state S1 and frequency tuning in another state S2 are described. The systems and methods include determining one or more variables for the states S1 and S2, and tuning a frequency for the state S1 of a radio frequency (RF) generator based on the one or more variables.

Abstract: PROBLEM: To improve the stability of the process of the plasma ignition, by allowing a high current to pass through an induction coil without increasing the power-supply voltage in the process of the plasma ignition. SOLUTION: An impedance conversion circuit 16 including an inductor 17 and a capacitor 18 is arranged between a full-bridge drive circuit 13 for switching DC voltage and an LC resonance circuit 19 including an induction coil 21 for plasma generation. The capacitance of the capacitor 18 can be varied between two levels, with a switching driver 23 serving as a switcher. When the plasma is to be ignited, the capacitance of the capacitor 18 is set at the higher level to allow a high current to be supplied to the LC resonance circuit 19. After the plasma is brought into a steady state of lighting, the capacitance of the capacitor 18 is changed to the lower level at which an impedance matching is achieved so as to maximize the power efficiency.

Abstract: Systems and methods for tuning an impedance matching network in a step-wise fashion are described. By tuning the impedance matching network in a step-wise fashion instead of directly to achieve optimum values of a radio frequency (RF) and a combined variable capacitance, processing of a wafer using the tuned optimal values becomes feasible.

Abstract: A control system is provided and includes a memory and a conversion module. The memory is configured to store position data of first positions of a first variable capacitor of a first match network of a first plasma processing system. Each of the first positions of the first variable capacitor corresponds to a respective one of multiple loads experienced by the first match network. The conversion module is configured to: obtain the position data stored in the memory; determine reference capacitor positions based on the position data; determine a calibrated conversion model based on the reference capacitor positions, where the calibrated conversion model converts second positions of the first variable capacitor to comparable capacitor positions, and where the second positions are positions of the first variable capacitor existing subsequent to the determination of the calibrated conversion model; and store the calibrated conversion model.

Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

Abstract: A system and method to control active and adaptive antenna arrays processes information to determine one or more areas of interest for subsequent transmission. The method includes selecting one or more antennas among a set of available antennas in different locations of a vehicle to perform the subsequent transmission. Each of the one or more antennas includes one or more antenna elements. The method also includes assigning a magnitude and phase for the subsequent transmission by each of the one or more antenna elements of each of the one or more antennas.

Abstract: Aspects of this disclosure relate to selectively shielded radio frequency modules. A radio frequency module can include a package substrate, a radio frequency shielding structure extending above the package substrate, a radio frequency component over the package substrate and in an interior of the radio frequency shielding structure, and an antenna on the package substrate external to the radio frequency shielding structure. The shielding structure can include a shielding layer providing a shield over the radio frequency component and leaving the radio frequency module unshielded over the antenna.

Abstract: An electron accelerator is provided. The electron accelerator comprises a resonant cavity comprising a hollow closed conductor, an electron source configured to inject a beam of electrons, and an RF system. The electron accelerator further comprises a magnet unit, comprising a deflecting magnet. The deflecting magnet is configured to generate a magnetic field in a deflecting chamber in fluid communication with the resonant cavity by a deflecting window. The magnetic field is configured to deflect an electron beam emerging out of the resonant cavity through the deflecting window along a first radial trajectory in the mid-plane (Pm) and to redirect the electron beam into the resonant cavity through the deflecting window towards the central axis along a second radial trajectory. The deflecting magnet is composed of first and second permanent magnets positioned on either side of the mid-plane (Pm).

Abstract: Within an ion pump, accelerated ions leave the center portion of an anode tube due to the anode tube symmetry and the generally symmetrical electric fields present. The apparent symmetry within the anode tube may be altered by making the anode tube longitudinally segmented and applying independent voltages to each segment. The voltages on two adjacent segments may be time varying at different rates to achieve a rasterizing process. In various embodiments, one or more wire internal to the anode structure and having a time-varying electric potential may alter the trajectory of the ions leaving the anode tube, as may the shape of the anode near the ends of the anode tube.

Abstract: Systems and methods for tuning a radio frequency (RF) generator are described. One of the methods includes supplying, by a high frequency RF generator, a high frequency RF signal to the IMN. The method includes accessing a plurality of measurement values of a variable measured at an output of the high frequency RF generator to generate a parameter. The variable is measured during a plurality of cycles of operation of a low frequency RF generator. The measurement values are associated with a plurality of values of power supplied by the high frequency RF generator. The method includes determining, for one of the cycles, a value of a frequency of the high frequency RF generator and a value of a factor associated with a shunt circuit of the IMN for which there is an increase in efficiency in power delivered by the high frequency RF generator.

Abstract: Selectively shielded radio frequency modules are disclosed. A radio frequency module can include a package substrate, a radio frequency component on the package substrate, a multi-layer antenna, a radio frequency shielding structure configured to provide shielding between the multi-layer antenna and the radio frequency component. The radio frequency shielding structure can include a shielding layer providing a shield over the radio frequency component and leaving the radio frequency module unshielded over the antenna.

Abstract: A pulsed plasma analyzer includes a pulse modulator that controls an off-time of a pulsed plasma that includes a target radical, an optical spectrometer that measures optical emissions of the pulsed plasma after the off-time to determine optical emission data, and a concentration estimating module that estimates a concentration of the target radical during the off-time based on an initial optical emission value of the optical emission data that changes as a function of the off-time, and outputs an estimated concentration.

Abstract: A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group.

Abstract: A feedstock delivery system transfers a carbonaceous material, such as municipal solid waste, into a product gas generation system. The feedstock delivery system includes a splitter for splitting bulk carbonaceous material into a plurality of carbonaceous material streams. Each stream is processed using a weighing system for gauging the quantity of carbonaceous material, a densification system for forming plugs of carbonaceous material, a de-densification system for breaking up the plugs of carbonaceous material, and a gas and carbonaceous material mixing system for forming a carbonaceous material and gas mixture. A pressure of the mixing gas is reduced prior to mixing with the carbonaceous material, and the carbonaceous material to gas weight ratio is monitored. A transport assembly conveys the carbonaceous material and gas mixture to a first reactor where at least the carbonaceous material within the mixture is subject to thermochemical reactions to form the product gas.

Abstract: A feedstock delivery system transfers a carbonaceous material, such as municipal solid waste, into a product gas generation system. The feedstock delivery system includes a splitter for splitting bulk carbonaceous material into a plurality of carbonaceous material streams. Each stream is processed using a weighing system for gauging the quantity of carbonaceous material, a densification system for forming plugs of carbonaceous material, a de-densification system for breaking up the plugs of carbonaceous material, and a gas and carbonaceous material mixing system for forming a carbonaceous material and gas mixture. A pressure of the mixing gas is reduced prior to mixing with the carbonaceous material, and the carbonaceous material to gas weight ratio is monitored. A transport assembly conveys the carbonaceous material and gas mixture to a first reactor where at least the carbonaceous material within the mixture is subject to thermochemical reactions to form the product gas.

Abstract: Traditional plasma voltage generator circuits consist mainly of fly-back or pulse forming networks. These systems tend supply plasma generating pulses to plasma reactors at frequencies less than 30 kHz with most being less than 5 kHz. In addition these traditional plasma voltage generators are limited in the ability to adjust to dynamic reactor conditions, are energy inefficient and are limited in the amount of material ionized. An innovative drive system is presented herein that is energy efficient, can operate at frequencies below and well above 30 kHz, and can react to dynamic conditions in the plasma reactor allowing much greater flexibility and enhanced operating capabilities.

Abstract: In an inductively-coupled plasma torch unit, a coil, a first ceramic block, and a second ceramic block are arranged parallel to one another, and an elongated chamber has an annular shape. Plasma generated inside the chamber is ejected toward a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the elongated chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. A rotating ceramic pipe having a cylindrical shape is provided so as to cause a refrigerant to flow into a cavity formed inside the ceramic pipe. Accordingly, it becomes possible to apply greater high-frequency power, thereby enabling fast plasma processing.

Abstract: The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source.

Abstract: Methods and systems for performing non-contact temperature measurements of optical elements with long wavelength infrared light are described herein. The optical elements under measurement exhibit low emissivity to long wavelength infrared light and are often highly reflective or highly transmissive to long wavelength infrared light. In one aspect, a material coating having high emissivity, low reflectivity, and low transmission at long wavelength IR wavelengths is disposed over selected portions of one or more optical elements of a metrology or inspection system. The locations of the material coating are outside the direct optical path of the primary measurement light employed by the metrology or inspection system to perform measurements of a specimen. Temperature measurements of the front and back surfaces of an IR-transparent optical element are performed with a single IR camera. Temperature measurements are performed through multiple optical elements in an optical path of a primary measurement beam.

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

Abstract: Systems and methods for defining a refined RF model of an RF transmission path includes identifying a selected initial term in the RF model having a least significant impact on a goodness of fit of the RF model with the selected initial term removed from the RF model. The initial term having the least significant impact on the goodness of fit is removed from the RF model. A selected non-initial term having a most significant impact on the goodness of fit of the RF model is identified and added to the RF model. The non-initial term being selected from a set of terms describing corresponding elements of the RF transmission path. The initial terms and non-initial terms having the most significant impact of goodness of fit are selected for a refined RF model.

Abstract: A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

Abstract: A source hollow body serves for predefining a plasma chamber for a section of a source plasma of an EUV plasma light source. The hollow body has at least one chamber wall that delimits the plasma chamber. The chamber wall has a multilayer construction. This results in a source hollow body that improves the practical usability of an EUV plasma light source equipped with the source hollow body.

Abstract: An electrically heated aerosol-generating system is provided, including an aerosol-generating device and a cartridge configured to be used with the device, the device including a device housing; a flat spiral inductor coil; and a power supply connected to the flat spiral inductor coil and configured to provide a high frequency oscillating current to the flat spiral inductor coil; the cartridge including a cartridge housing containing an aerosol-forming substrate and configured to engage the device housing; and a susceptor element positioned and configured to heat the aerosol-forming substrate by a high-frequency oscillating current passed through the flat spiral inductor coil to generate heat in the susceptor element.

Abstract: Systems and methods for tuning a radio frequency (RF) generator are described. One of the methods includes supplying, by a high frequency RF generator, a high frequency RF signal to the IMN. The method includes accessing a plurality of measurement values of a variable measured at an output of the high frequency RF generator to generate a parameter. The variable is measured during a plurality of cycles of operation of a low frequency RF generator. The measurement values are associated with a plurality of values of power supplied by the high frequency RF generator. The method includes determining, for one of the cycles, a value of a frequency of the high frequency RF generator and a value of a factor associated with a shunt circuit of the IMN for which there is an increase in efficiency in power delivered by the high frequency RF generator.

Abstract: Systems and methods for determining a value of a variable on a radio frequency (RF) transmission model are described. One of the methods includes identifying a complex voltage and current measured at an output of an RF generator and generating an impedance matching model based on electrical components defined in an impedance matching circuit coupled to the RF generator. The method further includes propagating the complex voltage and current through the one or more elements from the input of the impedance matching model and through one or more elements of an RF transmission model portion that is coupled to the impedance matching model to determine a complex voltage and current at the output of the RF transmission model portion.

Abstract: A power supply device includes: an oscillation unit for outputting a high frequency signal; a modulation unit for outputting a pulsed high frequency signal; a level adjustment unit for adjusting and outputting a level of the pulsed high frequency signal; a power amplifier for amplifying a power outputted from the level adjustment unit; an output power detection unit for detecting an output power value from the power amplifier; and a control unit. The control unit corrects and outputs a level control signal for controlling the level of the pulsed high frequency signal based on a corresponding correction factor at each of elapsed times in an on state of the pulsed high frequency signal, and compares comparison values in a current pulse and a previous pulse to update the correction factor such that comparison result between the set power value and the output power value becomes smaller at each reflection coefficient.

Abstract: Impedance matching circuits and methods for radio frequency (RF) transmission coil are disclosed. An example impedance matching circuit includes a coil matching circuit, a RF power detection circuit, and a spectrometer. The spectrometer outputs an output voltage reversely applied on a varactor diode of the coil matching circuit. An impedance of the coil matching circuit is changed based on the output voltage. The spectrometer outputs a RF transmission signal to the RF power detection circuit, receives a power of a RF reflected signal corresponded to the output voltages. The spectrometer receives powers of different RF reflected signals corresponded to different output voltages, and assigns an output voltage corresponded to a minimum power of the RF reflected signals as an impedance matching voltage, where an equivalent impedance of the coil matching circuit and the RF transmission coil matches with an impedance of RF transmission lines.

Abstract: Examples of a system for generating and confining a compact toroid are disclosed. The system comprises a plasma generator for generating magnetized plasma, a flux conserver for receiving the compact toroid, a power source for providing current pulse and a controller for actively controlling a current profile of the pulse to keep plasma's q-profile within pre-determined range. Examples of methods of controlling a magnetic lifetime of a magnetized plasma by controlling a current profile of the current pulse are disclosed.

Abstract: A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.

Abstract: Provided herein are approaches for dynamically modifying plasma volume in an ion source chamber by positioning an end plate and radio frequency (RF) antenna at a selected axial location. In one approach, an ion source includes a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall, and an RF antenna adjacent a plasma within the plasma chamber, wherein the RF antenna is configured to provide RF energy to the plasma. The ion source may further include an end plate disposed within the plasma chamber, adjacent the first end wall, the end plate actuated along the longitudinal axis between a first position and a second position to adjust a volume of the plasma. By providing an actuable end plate and RF antenna, plasma characteristics may be dynamically controlled to affect ion source characteristics, such as composition of ion species, including metastable neutrals.

Abstract: A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20° C. to 145° C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/m2 to 3.5 kW/m2 with respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

Abstract: Disclosed is a method of producing a processing condition of a plasma processing apparatus. The method includes producing a plurality of processing conditions having different processing parameters, which are applied to an intermediate process performed between an ignition process that ignites plasma of a processing gas using a high frequency wave and a processing process that processes a workpiece by the plasma; sequentially performing the ignition process, the intermediate process applied with each of the processing conditions, and the processing process; measuring, when the intermediated process is changed to the processing process, a power of a reflected wave of the high frequency wave during the processing process in association with each of the processing conditions; and selecting, among the plurality of processing conditions, a processing condition in which the power of the reflected wave of the high frequency wave is minimized.

Abstract: There is provided an airflow control device of an internal combustion engine comprising: a plasma actuator provided in an intake passage, a fuel injector for port injection provided in the intake passage so as to inject fuel toward the plasma actuator and a control unit for controlling them. The control unit is configured to actuate the plasma actuator after valve opening of an intake valve, in addition to causing the fuel injector to perform an operation of fuel injection, and causing the plasma actuator to perform an operation in a part of a valve closing period of the intake valve. Furthermore, the control unit includes a determination unit to determine whether or not water has adhered to the plasma actuator, and makes port injection operation and plasma actuator operation be performed only when water has adhered.

Abstract: A system for the active remote detection of radioactivity from a target of interest includes a first laser source for generating an ionizing laser beam when remotely directed on a radioactive target of interest, a second laser source for generating a laser probe beam on the radioactive target of interest, and a spectrometer configured to measure the frequency modulation of the probe beam caused by the ionization from the radioactive target of interest.

Abstract: Methods and apparatus for plasma processing are provided herein. The method for controlling current ratio in a substrate processing chamber may include (a) providing a first RF signal to a first RF coil and a second RF coil at a first current ratio set point and a first current operating mode, (b) determining a first dynamic control limit for the first current ratio set point based on a value of the first current ratio set point and the first current operating mode, (c) measuring an amount of current supplied to each of the first and second coils, (d) determining the actual current ratio based on the measured amounts of current supplied to each of the first and second coils, (e) determining whether the actual current ratio determined is within the dynamic control limits, and (f) repeating steps (b)-(e) until the actual current ratio determined is within the dynamic control limits.

Abstract: Systems and methods for using multiple one or more fixtures and efficiency to determine fixed parameters of a match network model are described. A value of efficiency that is measured using a network analyzer and a value of predicted efficiency that is determined using the match network model are compared. The comparison is made to determine whether the fixed parameters are to be assigned to the match network model.

Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.

Abstract: Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate flattening system includes: a first process chamber having a first substrate support and a first showerhead, wherein the first substrate support does not include a chucking mechanism; a first heater disposed in the first substrate support to heat a substrate placed on a first support surface of the first substrate support; a second heater configured to heat a process gas flowing through the first showerhead into a first processing volume of the first process chamber; and a second process chamber having a second substrate support, wherein the second substrate support is not heated, and wherein the first process chamber and the cooling chamber are both non-vacuum chambers.

Abstract: A generator and method for tuning the generator are disclosed. The method includes setting the frequency of power applied by the generator to a current best frequency and sensing a characteristic of the power applied by the generator. A current best error based upon the characteristic of the power is determined, and the frequency of the power at the current best frequency is maintained for a main-time-period. The frequency of the power is then changed to a probe frequency and maintained at the probe frequency for a probe-time-period, which is less than the main-time-period. The current best frequency is set to the probe frequency if the error at the probe frequency is less than the error at the current best frequency.

Abstract: At a time point T0 when starting a process, a duty ratio of a high frequency power RF1 to which power modulation is performed is set to be an initial value (about 90%) which allows plasma to be ignited securely under any power modulating conditions. At the substantially same time of starting the process, the duty ratio of the high frequency power RF1 is gradually reduced from the initial value (about 90%) in a regular negative gradient or in a ramp waveform. At a time point t2 after a lapse of a preset time Td, the duty ratio has an originally set value Ds for an etching process. After the time point t2, the duty ratio is fixed or maintained at the set value Ds until the end (time point T4) of the process.

Abstract: The invention relates to a method and to a control unit for operating the plasma generation apparatus. The invention is based on a method and a control unit in which a voltage is applied as an ignition voltage between an anode and a cathode for ignition of a plasma. In order to enable a gentle operation of the plasma generation apparatus it is provided in accordance with the invention that a check is continuously carried out during the ignition process whether the ignition of the plasma has been effected. Additionally, the ignition voltage (UZ) is increased starting from an initial ignition voltage (UZA) and after recognizing an effected ignition (at the point in time tZ) of the plasma, the voltage is reduced between the anode and the cathode to a maintenance voltage (UA).

Abstract: An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

Abstract: A method, apparatus, and system for mitigating undesired effects of a vehicle traveling at a speed greater than a critical Mach number for the vehicle. Ultraviolet energy is generated using a plurality of ultraviolet energy sources associated with an interior structure of the vehicle that travels at the speed greater than the critical Mach number for the vehicle. The ultraviolet energy is transported from the plurality of ultraviolet energy sources past an exterior of the vehicle around a selected location of the vehicle. A plasma is created around the selected location to mitigate the undesired effects of the vehicle traveling at the speed greater than the critical Mach number for the vehicle.

Abstract: An open plasma lamp includes a cavity section. A gas input and gas output of the cavity section are arranged to flow gas through the cavity section. The plasma lamp also includes a gas supply assembly fluidically coupled to the gas input of the cavity section and configured to supply gas to an internal volume of the cavity section. The plasma lamp also includes a nozzle assembly fluidically coupled to the gas output of the cavity section. The nozzle assembly and cavity section are arranged such that a volume of the gas receives pumping illumination from a pump source, where a sustained plasma emits broadband radiation. The nozzle assembly is configured to establish a convective gas flow from within the cavity section to a region external to the cavity section such that a portion of the sustained plasma is removed from the cavity section by the gas flow.