Abstract: Illumination sources are turned ON and turned OFF in response to detected levels of illumination in an ambient environment reaching respective thresholds, which may be user set. The detection of these turn ON and turn OFF events is verified, for instance against expected events or conditions for the particular location, date and/or time. An alert or log entry may be generated if a detected event or condition appears to be invalid. For instance, if an amount of illumination in the environment is different than predicted by a threshold amount or if a time that the event occurs or is detected is different than expected or predicted by more than a threshold amount. A level of illumination may be decreased to some non-zero level after a specified time after turn ON, and increased at some specified time before turn OFF. Use of information from external sources (e.g., satellites, cell towers) may allow times to be using local time, including daylight savings if applicable.

Abstract: A method with various related apparatus polarizes the orbits of atomic electrons by strong magnetic fields creating in the atomic structure a magnetic field. The polarized atoms are introduced onto fuels, improving an efficiency of the fuels, including but not limiting to, new forms of gaseous, liquid and solid fuels with a bonded-in content of Hydrogen, Oxygen and/or other gases to enhance energy output and decrease contaminants in the exhaust. Further, methods of coating computer chips and other surfaces for their protection against oxidation, new fuels with energy content and flame temperatures greater than those of the conventional form of the same fuels, etc.

Abstract: In one aspect, a method includes protecting passive components connected to a high-frequency generator. In another aspect, a system includes a high-frequency generator having an HF source generating a high-frequency power signal at a fundamental frequency, and having a first control circuit which is fed with a signal related to an HF power transmitted by a high-frequency cable between the high-frequency generator and a load.

Abstract: A thermally insulating panel (e.g., vacuum IG window unit) includes first and second opposing substrates spaced apart from one another by a plurality of spacers. A low pressure space is defined between the substrates, and is hermetically sealed off by at least one edge seal. During evacuation of the space, a plasma is ignited within the space via a static grid assembly in order to reduce the time needed to evacuate the space down and/or to help remove debris from within the space to the desired low pressure.

Abstract: Disclosed is a method for presetting a tuner that matches a power required for plasma emission in a plasma processing apparatus. The method includes: obtaining a relationship of a time lapse from power supply, an emission intensity of plasma, and a setting position of the tuner by emitting plasma; differentiating the emission intensity by time to calculate a time when an increase rate of the emission intensity becomes maximum; and setting the setting position of the tuner at a time, which is obtained by subtracting a time required from the setting of the tuner until the setting is reflected on the emission intensity from the time when the increase rate of the emission intensity becomes maximum, as a preset position.

Abstract: A plasma cell for controlling convection includes a transmission element configured to receive illumination from an illumination source in order to generate a plasma within a plasma generation region of the volume of gas. The transmission element of the plasma cell is at least partially transparent to at least a portion of the illumination generated by the illumination source and at least a portion of broadband radiation emitted by the plasma. The plasma cell also includes one or more gas return channels formed within the transmission element for transferring gas from a region above the plasma generation region to a region below the plasma generation region.

Abstract: An antenna structure includes four induction antennas which have the same structure, are connected in parallel and are disposed to be overlapped. The induction antennas include an external upper section arranged on a first quadrant of a first layer, an internal upper section connected to the external upper section and arranged on a second quadrant of the first layer, an internal lower section connected to the internal upper section and arranged on a third quadrant of a second layer arranged on a lower part of the first layer, and an external lower section connected to the internal lower section and arranged on a fourth quadrant of the second layer. An RF power is supplied to one end of the external upper section, and the other end of the external lower section is grounded.

Abstract: Provided herein an apparatus for generating plasma, the apparatus including a nozzle array, first electrode, and housing. The nozzle discharges plasma. The first electrode is disposed to surround the nozzle array. The housing is disposed to surround the nozzle array and first electrode. The nozzle includes a plurality of nozzles disposed adjacent to one another and in the form of an array, each nozzle configured to discharge plasma. Therefore, it is possible to generate a large size plasma evenly and stably.

Abstract: A lighting device may include a tube and end caps located at two ends of the tube, a lighting assembly arranged in the tube, a driver for the lighting assembly, an antenna, and a wireless communication circuit for conducting wireless communication, the antenna being provided in the end cap and the wireless communication circuit being provided in the tube or at least partially provided in the end cap, and one side of the wire communication circuit being connected to the driver and the other side thereof being connected to the antenna.

Abstract: A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

Abstract: An output matching network for a differential power amplifier comprises an output transformer having a center tap and a low pass filter. The output transformer is configured to receive a first amplified signal from a first differential output stage amplifier of the differential power amplifier and provide a first output signal to the low pass filter. The output transformer is also configured to receive a second amplified signal from a second differential output stage amplifier of the differential power amplifier and provide a second output signal to the low pass filter. The low pass filter is configured to receive the first and second output signal from the output transformer and provide a filtered output signal.

Abstract: An arrangement for cooling a plasma-based radiation source with a metal cooling liquid and a method for starting up a cooling arrangement of this type has a pump unit for conveying the metal cooling liquid from a reservoir to an immersion bath in a pipe portion that is connected to the reservoir in the conveying direction of the cooling circuit has at least one pump for conveying the metal cooling liquid through an external field effect of the at least one pump. A control unit for controlling the at least one pump controls the at least one pump at least temporarily in a pumping direction opposite to the conveying direction of the cooling circuit in order to generate a heating effect through external field effect on metal cooling liquid located in the pipe portion.

Abstract: A power generation system and method for identifying characteristics of a plasma load are disclosed. The power generation system may include a power source configured to apply a primary power signal at a primary frequency to an output and one or more secondary power signals at one or more secondary frequencies to the output. A sensor is arranged to monitor a characteristic of the power delivered to the plasma load, and an identification module analyzes the monitored characteristic to extract characteristics of the plasma load.

Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

Abstract: Methods and apparatus provide for: producing a plasma plume within a plasma containment vessel from a source of plasma gas; feeding an elongate feedstock material having a longitudinal axis into the plasma containment vessel such that at least a distal end of the feedstock material is heated within the plasma plume; and spinning the feedstock material about the longitudinal axis as the distal end of the feedstock material advances into the plasma plume, where the feedstock material is a mixture of compounds that have been mixed, formed into the elongate shape, and at least partially sintered.

Abstract: A system and method of improving the performance and extending the lifetime of an ion source is disclosed. The ion source includes an ion source chamber, a suppression electrode and a ground electrode. In the processing mode, the ion source chamber may be biased to a first positive voltage, while the suppression electrode is biased to a negative voltage to attract positive ions from within the chamber through an aperture and toward the workpiece. In the cleaning mode, the ion source chamber may be grounded, while the suppression electrode is biased using a power supply having a high current capability. The voltage applied to the suppression electrode creates a plasma between the suppression electrode and the ion source chamber, and between the suppression electrode and the ground electrode.

Abstract: Plasma processing systems and methods including a plasma processing chamber and an RF transmission path. The plasma processing chamber including an electrostatic chuck. The RF transmission path including one or more RF generators, a match circuit coupled the RF generator and an RF feed coupling the match circuit to the electrostatic chuck. The system also includes an RF return path coupled between the plasma processing chamber and the RF generator. A plasma processing system controller is coupled to the plasma processing chamber and the RF transmission path. The controller includes recipe logic for at least one plasma processing recipe including multiple plasma processing settings and an RF power compensation logic for adjusting at least one of the plasma processing settings.

Abstract: A plasma source is provided including a core element extending from a first end to a second end along a first axis. The plasma source further includes one or more coils disposed around respective one or more first portions of the core element. The plasma source further includes a plasma block having one or more interior walls at least partially enclosing an annular plasma-generating volume that is disposed around a second portion of the core element. The annular plasma-generating volume includes a first region that is symmetrical about a plurality of perpendicular axes that are perpendicular to a first point positioned on the first axis, the first region having a width in a direction parallel to the first axis and a depth in a direction perpendicular from the first axis. The first region has a width that is at least three times greater than the depth of the first region.

Abstract: A radical generator includes a supply tube, a plasma-generating tube, a coil winding about an outer circumference of the plasma-generating tube, for generating an inductively coupled plasma in the plasma-generating tube, an electrode for generating a capacitively coupled plasma in the plasma-generating tube and adding the capacitively coupled plasma to the inductively coupled plasma, and a parasitic-plasma-preventing tube including a dielectric material which extends from a bottom of the plasma-generating tube to an opening of the supply tube in a space between the bottom and the opening, and a tip part thereof is inserted into the supply tube to cover an inner wall of the supply tube for preventing a generation of a parasitic plasma between the electrode and the inner wall of the supply tube.

Abstract: A microwave plasma generating device has a plasma chamber. A microwave generating device is provided outside of the plasma chamber, and the microwaves are coupled into the plasma chamber via a microwave in-coupling device. The microwave in-coupling device has an inner conductor which leads into the plasma chamber through a chamber wall of the plasma chamber, an insulating tube which encloses the inner conductor and separates the inner conductor from an interior of the plasma chamber, and an outer conductor which leads into the plasma chamber through the chamber wall and which is coaxial to the inner conductor. The outer conductor has an outer conductor end in the plasma chamber. The inner and outer conductors form a microwave line, an outlet of microwaves out of the microwave line is provided in the plasma chamber to generate microwave plasma in the interior of the plasma chamber.

Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.

Abstract: A system and method of cleaning a plasma processing chamber component includes removing the component from the plasma processing chamber, the removed component including a material deposited on the surface of the component. A heated oxidizing solution is applied to the material deposited on the component to oxidize a first portion deposited material. A stripping solution is applied to the component to remove the oxidized first portion of the deposited material. An etching solution is applied to remove a second portion of the deposited material and the cleaned component can be rinsed and dried.

Abstract: The chamber, having a ceramic window disposed in a ceiling of the chamber is provided. Included is a ceramic support having a plurality of spokes that extend from a center region to an outer periphery, and each of the spokes include a hammerhead shape that radially expands the ceramic support in a direction that is away from an axis of a spoke. Also included is a plurality of screw holes disposed through the ceramic support. The plurality of screw holes defined to enable screws to connect to a TCP coil having an inner and outer coil. The outer coil is to be disposed under the hammerhead shape of each of the spokes, and a radial gap is defined between each of the hammerhead shapes. The radial gap defines a non-continuous ring around the outer coil. A plurality of screws are disposed through the screw holes for attaching the TCP coil.

Abstract: A pulse plasma apparatus includes a process chamber, source RF generator configured to supply first and second level RF pulse power having first and second duty cycles to an upper electrode of the process chamber, a reflected power indicator configured to indicate reflection RF power, a first matching network, and a controller. The first matching network is configured to match an impedance of the process chamber with an impedance of the source RF generator as a first or second matching capacitance value, respectively when the first level RF pulse power or second level RF pulse power is supplied, respectively. The controller is configured to calculate a third matching capacitance value based on the first and second matching capacitance values and a ratio of the first and second duty cycles, provide the third matching capacitance values to the first matching network, and control the source RF generator and first matching network.

Abstract: The present invention relates to a process for preventing substrate damages in an installation for surface treatment by dielectric barrier discharge (DBD) and a surface treatment DBD installation for carrying out such process. It comprises:—detecting the amplitude of the voltage at the terminals of the electrodes and the amplitude of the current circulating between said electrodes;—defining the maximum number of alternations of voltage at the terminals of the electrodes in the presence of a hot electric arc (n max) in order not to exceed 50 Joules as dissipated energy in said substrate;—when a hot electric arc appears between said electrodes, modifying with inverse feedback the voltage at the terminals of said electrodes before the defined maximum number of alternations of voltage at the terminals of the electrodes is reached.

Abstract: A plasma gate includes at least one conductive input line having a corresponding at least one terminal end, a plurality of conductive output lines having a corresponding plurality of input ends, and a plasma gap having opposite first and second ends, where the plasma gap extends between the terminal ends of the input lines and the input ends of the output lines. A plasma-generating gas is resident in the plasma gap. At least one field generator having a field-generating distal end is mounted so as to position the distal end of the field generator adjacent the plasma gap. The output lines are arrayed along the plasma gap in a spaced apart array. The distal end of the field generator is positioned at least at the first end of the plasma gap.

Abstract: An apparatus for generating and maintaining plasma for plasma processing using inductively coupled RF power. The apparatus includes a resonant circuit having a resonant capacitance and a resonant inductance, an excitation circuit for exciting the resonant circuit, and a coupling element for coupling RF power from the inductance into a plasma chamber.

Abstract: A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.

Abstract: A plasma device includes a dielectric barrier, a first electrode structure, a second electrode structure, and a third electrode structure. The dielectric barrier has an upstream terminal and a downstream terminal and defines a space, in which the first electrode structure is disposed. A gap with multiple widths is formed between the first electrode structure and the dielectric barrier. The dielectric barrier is located between the first electrode structure and the second electrode structure. The second electrode structure includes electrode blocks sequentially arranged from the upstream terminal to the downstream terminal. The dielectric barrier, the first electrode structure, and the second electrode structure are located on the same side of the third electrode structure located at the downstream terminal. A minimum distance between the electrode blocks and the third electrode structure is not less than a distance between the first electrode structure and the third electrode structure.

Abstract: The present invention relates to a non-thermal plasma jet device as spatial ionization source for ambient mass spectrometry of the type which allows a free adjustment of the geometry of the plasma beam, wherein the device comprises a double dielectric barrier probe of non-thermal plasma or NTP probe, which generates a non-thermal plasma jet; a high voltage and high frequency transformer circuit that connects an outer electrode through which it is possible to perform a discharge for the ionization of a gas which produces plasma, and wherein said plasma generator circuit is in turn connected to a source of AC power; an inner electrode which is grounded and allows to perform the discharge for the production of plasma; a storage tank of a gas serving as discharge gas; a test sample on which the non-thermal plasma jet is applied; and a ion transfer adapter to direct the ions produced by the device from the vacuum-free sample into a mass analyzer.

Abstract: This disclosure relates to methods and devices for generating electron dense air plasmas at atmospheric pressures. In particular, this disclosure relate to self-contained toroidal air plasmas. Methods and apparatuses have been developed for generating atmospheric toroidal air plasmas. The air plasmas are self-confining, can be projected, and do not require additional support equipment once formed.

Abstract: The invention relates to a flexible flat electrode arrangement for a dielectrically limited gas discharge, comprising a central region (3), an edge region, and a flat electrode (14) which conducts a high-voltage potential and which is embedded in a flat dielectric that forms an upper face (10) and a contact face (6). The invention allows the active surface of the electrode arrangement to be matched to the size of a surface to be treated in that the flat dielectric is in the form of a flat strip (1) wound into a spiral at least in the edge region, and the electrode (14) is formed by at least one electric conductor which runs in the longitudinal direction of the wound strip (1) and which leads into an end surface (13) of the strip (1).

Abstract: A plate of substantially uniform thickness is formed from an electrically conductive material. The plate has a top surface defined to support a part to be measured. The plate has a bottom surface defined to be connected to a radiofrequency (RF) transmission rod such that RF power can be transmitted through the RF transmission rod to the plate. The plate is defined to have a number of holes cut vertically through the plate at a corresponding number of locations that underlie embedded conductive material items in the part to be measured when the part is positioned on the top surface of the plate.

Abstract: Methods and apparatuses for controlling plasma generation in a plasma processing chamber to reduce an effective residence time of by-product gases or to control in real time the concentration of certain polymer pre-cursors or reaction by-products in the plasma processing chamber are disclosed. The gas residence time is “effectively” reduced by reducing the plasma reaction for at least a portion of the process time. Thresholds can be provided to control when the plasma reaction is permitted to proceed at the full rate and when the plasma reaction is permitted to proceed at the reduced rate. By reducing the rate of plasma by-product generation at least for a portion of the process time, the by-product gas residence time may be effectively reduced to improve process results.

Abstract: An extreme ultraviolet (EUV) radiation source pellet includes at least one metal particle embedded within a heavy noble gas cluster contained within a noble gas shell cluster. The EUV radiation source assembly can be activated by a sequential irradiation of at least one first laser pulse and at least one second laser pulse. Each first laser pulse generates plasma by detaching outer orbital electrons from the at least one metal particle and releasing the electrons into the heavy noble gas cluster. Each second laser pulse amplifies the plasma embedded in the heavy noble gas cluster triggering a laser-driven self-amplifying process. The amplified plasma induces inter-orbital electron transitions in heavy noble gas and other constitute atoms leading to emission of EUV radiation. The laser pulsing units can be combined with a source pellet generation unit to form an integrated EUV source system.

Abstract: A plasma system includes a plasma device, an ionizable media source, and a power source. The plasma device includes an inner electrode and an outer electrode coaxially disposed around the inner electrode. The inner electrode includes a distal portion and an insulative layer that covers at least a portion of the inner electrode. The ionizable media source is coupled to the plasma device and is configured to supply ionizable media thereto. The power source is coupled to the inner and outer electrodes, and is configured to ignite the ionizable media at the plasma device to form a plasma effluent having an electron sheath layer about the exposed distal portion.

Abstract: Methods and apparatus provide for: feeding glass batch material into a plasma containment vessel; directing one or more sources of plasma gas into an inner volume of the plasma containment vessel in such a way that the plasma gas swirls in a cyclonic fashion within the plasma containment vessel; and applying first and second electromagnetic fields to the plasma gas to facilitate production of a plasma plume within the inner volume of the plasma containment vessel, where the plasma plume is of a generally cylindrical configuration, and is of sufficient thermal energy to cause the glass batch material to thermally react.

Abstract: The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end.

Abstract: An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.

Abstract: The present invention provides a plasma processing apparatus. The apparatus includes a vacuum chamber, a plasma reactor arranged in the vacuum chamber for plasma processing, an RF power source for providing RF signals to the plasma reactor and an RF power transmission unit for transmitting RF signals from the RF power source to the plasma reactor inside the vacuum chamber. The RF power transmission unit includes a transmission line for transmitting RF signals and an outer conductor for shielding the electromagnetic field around the transmission line. The invention can effectively avoid the problem of electric discharge when RF signals transmit in a vacuum chamber, resulting in more security and less transmission power loss.

Abstract: An open plasma lamp includes a cavity section. A gas input and gas output of the cavity section are arranged to flow gas through the cavity section. The plasma lamp also includes a gas supply assembly fluidically coupled to the gas input of the cavity section and configured to supply gas to an internal volume of the cavity section. The plasma lamp also includes a nozzle assembly fluidically coupled to the gas output of the cavity section. The nozzle assembly and cavity section are arranged such that a volume of the gas receives pumping illumination from a pump source, where a sustained plasma emits broadband radiation. The nozzle assembly is configured to establish a convective gas flow from within the cavity section to a region external to the cavity section such that a portion of the sustained plasma is removed from the cavity section by the gas flow.

Abstract: The present invention provides a light emitting diode (LED) driving device, which comprises: a direct current/direct current (DC/DC) controller, for controlling an output segment that is used to generate an output voltage from an input voltage and supply the output voltage to an LED; an output current driver, for generating an output current of the LED; and an output discharging circuit, for performing, based on a predetermined control signal, discharging of the output voltage when a generation action of the output voltage and the output current stops.

Abstract: A radical etching apparatus comprising a vacuum chamber for a substrate to be treated; a pipe pathway, connected to the vacuum chamber, a zone for generating plasma and a gas introduction device through which N2 and at least one of H2 and NH3 can be introduced; a microwave applying microwaves to the interior of the pipe pathway; a gas introducer as a source of supply for F, between the vacuum chamber and the zone; and a shower plate. A method comprises introducing N2 and at least one of H2 and NH3 into a pipe pathway and applying microwaves. The gas mixture is decomposed by the plasma forming decomposition products as active species which react with F during transportation to the vacuum chamber to make radicals. An SiO2 layer on the substrate etched in the vacuum chamber, by irradiating the substrate with the radicals through the shower plate.

Abstract: A plasma cell for controlling convection includes a transmission element configured to receive illumination from an illumination source in order to generate a plasma within a plasma generation region of the volume of gas. The plasma cell also includes a top flow control element disposed above the plasma generation, which includes an internal channel configured to direct a plume of the plasma upward, and a bottom flow control element disposed below the plasma generation region, which includes an internal channel configured to direct gas upward toward the plasma generation region. The top flow control element and the bottom flow control element are arranged within the transmission element to form one or more gas return channels for transferring gas from a region above the plasma generation region to a region below the plasma generation region.

Abstract: A plasma processing apparatus includes a processing container and a plasma generating mechanism including a high-frequency oscillator. The arrangement is configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator. In addition, an impedance regulator is configured to adjust impedance to be applied to the high-frequency oscillator. Further, a determining unit is configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on (a) a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and (b) a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed.

Abstract: The present invention provides a surface wave plasma source including an electromagnetic (EM) wave launcher comprising a slot antenna having a plurality of antenna slots configured to couple the EM energy from a first region above the slot antenna to a second region below the slot antenna, and a power coupling system is coupled to the EM wave launcher. A dielectric window is positioned in the second region and has a lower surface including the plasma surface. A slotted gate plate is arranged parallel with the slot antenna and is configured to be movable relative to the slot antenna between variable opacity positions including a first opaque position to prevent the EM energy from passing through the first arrangements of antenna slots, and a first transparent position to allow a full intensity of the EM energy to pass through the first arrangement of antenna slots.

Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.

Abstract: A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided.

Abstract: A lens for electron capture dissociation may include: a first electrode and a second electrode spaced apart from each other and arranged along a first direction; and a third electrode and a fourth electrode spaced apart from each other and arranged along a second direction perpendicular to the first direction. The first electrode and the second electrode may be disposed in a space in which a magnetic field is formed in the first direction and trap electrons. The third electrode and the fourth electrode may be in the form of a flat plate and may apply an electric field to the trapped electrons in the second direction.

Abstract: For ion-mode plasma containment, a toroidal vacuum vessel (322) has a major radius (208) and a minor radius (212). The toroidal vacuum vessel (322) is filled with a gas (391) having an initial particle density. An ionizing device (341) ionizes the gas (391) into a plasma (400). A transformer inductively (326) drives a toroidal particle current (332) comprising an ion current and an electron current about a toroidal axis. The toroidal particle current (322) heats the plasma (400) and generates a poloidal magnetic field (373). Field coils (414) wound poloidally about the toroidal vacuum vessel (322) generate a toroidal magnetic field (371). The toroidal magnetic field (371) at a wall of the toroidal vacuum vessel (322) is adjusted to satisfy a boundary condition for a minimum-energy. The plasma (400) is contained by the radial electric field, the poloidal magnetic field (373), and the toroidal magnetic field (371) within the toroidal vacuum vessel (322) in the minimum-energy state.