Abstract: A device is described herein which may comprise a chamber, a fluid line, a pressurized source material in the fluid line, a component restricting flow of the source material into the chamber, a sensor measuring flow of a fluid in the fluid line and providing a signal indicative thereof, and a pressure relief valve responsive to a signal to reduce a leak of source material into the chamber in the event of a failure of the component.

Abstract: The present invention is direct to a nano-probe corona tool and uses thereof. A nano-probe corona tool is disclosed having a tip with a diameter in the nano-scale, typically around 100 nm. The nano-probe corona tool is constructed of electrically conductive material. On the other end of the tool, a pulsed voltage source outputs a pulsed voltage to generated a pulsed electrical potential at the tip. The pulsed electrical potential at the tip causes a plasma discharge corona to occur. Uses of the corona discharge include, but are not limited to, optical emission spectroscopy, in the enhancement of deposition of coatings and nanoscale welding, e.g., nanotube or nanowires to a contact pad and welding two nanowires together, and in nanoscale surgery. For example, a nano-probe comprising CNTs may be inserted into cell membranes. The resulting corona discharge may be used to destroy tumors within the cell.

Abstract: An intensity distribution of an electric field of a high frequency power used for generating plasma is controlled by using an electrode made of a homogeneous material and a moving body. There is provided a plasma processing apparatus for introducing a processing gas into an evacuable processing chamber 100 and generating plasma by a high frequency power and performing a plasma process on a wafer W by the plasma. The plasma processing apparatus includes a dielectric base 105a having a multiple number of fine holes A; a varying member 200 as the moving body provided with a multiple number of rod-shaped members B capable of being inserted into and separated from the fine holes A; and a driving mechanism 215 configured to drive the varying member 200 to allow the rod-shaped members B to be inserted into and separated from the fine holes A.

Abstract: A temperature controlled dielectric window of an inductively coupled plasma processing chamber includes a dielectric window forming a top wall of the plasma processing chamber having at least first and second channels therein. A liquid circulating system includes a source of cold liquid circulating in a first closed loop which is not in fluid communication with the channels, a source of hot liquid circulating in a second closed loop which is in fluid communication with the channels, and first and second heat exchangers. The cold liquid passes through the first heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the first heat exchanger and then through the inlet of the first channel.

Abstract: The invention relates to a plasma generation device comprising a plurality of plasma modules for generating a plasma. Each plasma module has a module housing with at least one gas inlet for supplying a process gas. Furthermore, a discharge device for generating the plasma from the process gas and a plasma outlet are provided. The plasma generation device has at least two plasma modules for generating a plasma. Each plasma module has at least one gas outlet for some of the process gas, wherein the at least one gas outlet of at least one plasma module issues into a respective gas inlet of another plasma module.

Abstract: Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.

Abstract: A device (200) for generating a plasma that comprises a plasma source (241) designed as a hollow space and a resonator (201) that includes a waveguide (211, 212, 2131) and the plasma source (241), wherein the waveguide (212, 213) is operatively connected with the plasma source (241); the device further comprising a first coupling means (231) for energy introduction (251) and a second coupling means (232) for energy extraction (252), wherein each coupling means (231, 232) is in an energy- and signal-carrying (251, 252) operative connection with the waveguide; the device further comprising an active element (261) for energy supply to the resonator (201), operatively connected with the first (231) and the second (232) coupling means, wherein the plasma source (241) is at least partially integrated into a section of the waveguide (211, 212, 213) that extends between the first coupling means (231) and the second coupling means (232).

Abstract: A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal.

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Abstract: Preferred embodiments of the present invention include microplasma jet devices and arrays in various materials, and low temperature microplasma jet devices and arrays. These include preferred embodiment single microplasma jet devices and arrays of devices formed in monolithic polymer blocks with elongated microcavities. The arrays can be densely packed, for example having 100 jets in an area of a few square centimeters. Additional embodiments include metal/metal oxide microplasma jet devices that have micronozzles defined in the metal oxide itself. Methods of fabrication of microplasma jet devices are also provided by the invention, and the methods have been demonstrated as being capable of producing tailored micronozzle contours that are unitary with the material insulating electrodes.

Abstract: An apparatus for generating electromagnetic radiation includes an envelope, a vortex generator configured to generate a vortexing flow of liquid along an inside surface of the envelope, first and second electrodes within the envelope configured to generate a plasma arc therebetween, and an insulative housing associated surrounding at least a portion of an electrical connection to one of the electrodes. The apparatus further includes a shielding system configured to block electromagnetic radiation emitted by the arc to prevent the electromagnetic radiation from striking all inner surfaces of the insulative housing. The apparatus further includes a cooling system configured to cool the shielding system.

Abstract: A method for performing chamber-to-chamber matching includes receiving a voltage and a current measured at an output of an RF generator of a first plasma system. The method further includes calculating a sum of terms. The first term is a first product of a coefficient and a function of the voltage. The second term is a second product of a coefficient and a function of the current. The third term is a third product of a coefficient, a function of the voltage, and a function of the current. The method further includes determining the sum to be the etch rate associated with the first plasma system and adjusting power output from an RF generator of a second plasma system to achieve the etch rate associated with the first plasma system.

Abstract: This disclosure describes systems, methods, and apparatus for reducing a DC bias on a substrate surface in a plasma processing chamber due to cross coupling of RF power to an electrode coupled to the substrate. This is brought about via tuning of a resonant circuit coupled between the substrate and ground based on indirect measurements of harmonics of the RF field level at a surface of the substrate. The resulting reduction in DC bias allows a lower ion energy than possible without this resonant circuit and tuning thereof.

Abstract: A power supply for providing HV power to a lithography illumination source comprising a HV power source arranged to provide the HV power, a HV power transmission line arranged to transmit the HV energy from the HV power source and one or more RF terminations provided on one or more of an input end of the transmission line or an output end of the transmission line. The one or more RF terminations terminate the transmission line to reduce reflection of RF energy at the end of the transmission line.

Abstract: Disclosed is a plasma processing apparatus including: a processing container; a plasma generating mechanism including a high-frequency oscillator, and configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator; an impedance regulator configured to adjust impedance to be applied to the high-frequency oscillator; and a determining unit configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed.

Abstract: A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.

Abstract: Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a cooling plate. In addition, the microwave plasma processing apparatus includes an intermediate metal body installed on a processing container side of the cooling plate to be spaced apart from the cooling plate so that a spacing between the intermediate metal body and the cooling plate forms a waveguide of microwaves. The intermediate metal body is in contact with the cooling plate at one or plural convex portions arranged to block a portion of the waveguide. Further, the microwave plasma processing apparatus includes a coaxial waveguide configured to supply microwaves to the waveguide, a slot antenna plate configured to radiate microwaves via the waveguide, a dielectric window installed on the processing container side of the slot antenna plate, and a processing container installed to be sealed by the dielectric window.

Abstract: A method of establishing a DC bias in front of at least one electrode in a plasma operating apparatus by applying an RF voltage with at least two harmonic frequency components with a controlled relative phase between the components, where at least one of the higher frequency components is established as an even multiple of the lower frequency component.

Abstract: An electrode for a plasma arc torch includes a conductive body and a plurality of emissive inserts. The conductive body includes a proximal end portion, a distal end portion and a cavity extending from the proximal end portion to the distal end portion. The distal end portion defines a distal end face. The plurality of emissive inserts extend through the distal end face. The conductive body further defines a dimple extending into the distal end face and at least partially into the emissive inserts. The dimple is positioned concentrically about a centerline of the conductive body.

Abstract: A plasma interaction simulator is presented. The simulator magnetically induces multiple distinct flows of plasma within a physical plasma vessel. The plasma flows collide with each other at flow interaction boundaries where discontinuities arising due to differences between the flows give rise to interactions. Sensors can be incorporated into the plasma simulator to observe and collect data about the plasma flow interactions.

Abstract: An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.

Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume; a first RF coil to couple RF energy into the processing volume; a second RF coil to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil; and a third RF coil to couple RF energy into the processing volume, the third RF coil disposed coaxially with respect to the first RF coil, wherein when RF current flows through the each of the RF coils, either the RF current flows out-of-phase through at least one of the RF coils with respect to at least another of the RF coils, or the phase of the RF current may be selectively controlled to be in-phase or out-of-phase in at least one of the RF coils with respect to at least another of the RF coils.

Abstract: Preferred embodiments of the present invention include microplasma jet devices and arrays in various materials, and low temperature microplasma jet devices and arrays. These include preferred embodiment single microplasma jet devices and arrays of devices formed in monolithic polymer blocks with elongated microcavities. The arrays can be densely packed, for example having 100 jets in an area of a few square centimeters. Additional embodiments include metal/metal oxide microplasma jet devices that have micronozzles defined in the metal oxide itself. Methods of fabrication of microplasma jet devices are also provided by the invention, and the methods have been demonstrated as being capable of producing tailored micronozzle contours that are unitary with the material insulating electrodes.

Abstract: A physical vapor deposition system may include an RF generator configured to supply a pulsing AC process signal to a target in a physical vapor deposition chamber via the RF matching network. A detector circuit may be coupled to the RF generator and configured to sense the pulsing AC process signal and to produce a corresponding pulsing AC voltage magnitude signal and pulsing AC current magnitude signal. An envelope circuit may be electrically coupled to the detector circuit and configured to receive the pulsing AC voltage and current magnitude signals and to produce a DC voltage envelope signal and a DC current envelope signal. A controller may be electrically coupled to the envelope circuit and the RF matching network and configured to receive the DC voltage and current envelope signals and to vary an impedance of the RF matching network in response to the DC voltage and current envelope signals.

Abstract: A cold plasma treatment device for delivery of a cold plasma to patient treatment area. Gas is fed to a gas compartment where it is energized by an electrode coupled to a pulse source to thereby generate a cold plasma. A dielectric barrier is sandwiched between the gas compartment and the electrode to form a dielectric barrier discharge device. The cold plasma exits the gas compartment via a bottom member having a plurality of holes. Gases that can be used include noble gases such as helium or combinations of noble gases.

Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

Abstract: A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A detector circuit may be configured to sense the AC process signal and output a DC magnitude error signal and a DC phase error signal. A controller may be coupled to the detector circuit and the RF matching network and configured to receive the DC magnitude and phase error signals and to vary an impedance of the RF matching network in response to the DC magnitude and phase error signals.

Abstract: Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold.

Abstract: A bellows which forms a flexible coupling between the lid of a processing chamber and an antenna feed through. One embodiment provides an apparatus comprising a chamber body having a chamber lid, a feed through extending through the chamber lid, an antenna coupled to and extending through the feed through to an internal volume of the chamber body, and a bellows comprising a first flange, the first flange coupled to the feed through, a second flange, the second flange coupled to the chamber lid, and a center portion extending between the first flange and the second flange.

Abstract: A gas diffuser unit for a process chamber includes at least one controllable diffuser, a power source, and a controller. The at least one controllable diffuser is configured to generate controllable forces acting in various directions on a gaseous material in a flow of the gaseous material introduced into the process chamber, to spread the gaseous material inside the process chamber. The power source is coupled to the at least one controllable diffuser, and configured to supply power to the at least one controllable diffuser to generate the controllable forces. The controller is coupled to the power source and configured to control the power supplied by the power source to the at least one controllable diffuser.

Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

Abstract: A large-area plasma generating apparatus is disclosed, which includes a reaction chamber; a first electrode disposed in the reaction chamber; a second electrode parallel with the first electrode and disposed in the reaction chamber; and a discharge region formed between the first and second electrodes and a plasma can be formed therein; wherein a travelling wave or a traveling-wave-like electromagnetic field is generated via at least one of the first and second electrodes and travels from one end of the discharge region to its opposite end, so as to uniform the plasma in the discharge region.

Abstract: A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.

Abstract: Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.

Abstract: Embodiments of the present invention include methods and apparatus for plasma processing in a process chamber using an RF power supply coupled to the process chamber via a matching network. In some embodiments, the method includes providing RF power to the process chamber by the RF power supply at a first frequency while the matching network is in a hold mode, adjusting the first frequency, using the RF power supply, to a second frequency during a first time period to ignite the plasma, adjusting the second frequency, using the RF power supply, to a known third frequency during a second time period while maintaining the plasma, and changing an operational mode of the matching network to an automatic tuning mode to reduce a reflected power of the RF power provided by the RF power supply.

Abstract: A method for controlling pulsed power that includes measuring a first pulse of power from a power amplifier to obtain data. The method also includes generating a first signal to adjust a second pulse of delivered power, the first signal correlated to the data to minimize a power difference between a power set point and a substantially stable portion of the second pulse. The method also includes generating a second signal to adjust the second pulse of delivered power, the second signal correlated to the data to minimize an amplitude difference between a peak of the second pulse and the substantially stable portion of the second pulse.

Abstract: A light source device is disclosed that can be regarded as a point light source and that emits vacuum ultraviolet light at a sufficiently high optical intensity. The device has a lamp housing to house a flash lamp and a parabolic mirror. Light emitted from the flash lamp is converted to parallel light by the parabolic mirror, and the parallel light exits the lamp housing from a quartz window. The flash lamp has a pair of electrodes, and the distance between the electrodes is 12.5 mm or less. The filler gas pressure is between 2 atm and 8 atm. A current is fed to the flash lamp from an electricity feeding unit. This current requires 8 ?s or less from the start of discharge until the current value reaches the peak value. The peak current value is 1500 A or more. The flash lamp emits light including vacuum ultraviolet light.

Abstract: The invention relates to an apparatus for generating a thermodynamically cold plasma under standard atmospheric conditions by injecting microwave radiation at a frequency of >3 GHz into a plasma chamber (6) and subsequent superposition of a plurality of waves with constructive interference. The microwave radiation, which is generated in specifically geometrically arranged, preferably cylindrical resonant cavities in an evacuated anode block, is coupled out via hollow waveguides (5) and fed to a separated plasma chamber (6). Using the combination of a plurality of microwave generators (7) it is possible to inject a multiplicity of microwaves into the plasma chamber (6). A material stream, for example a process gas, can be fed in through an inlet (9) at the upper side of the plasma chamber and be discharged through an outlet for example in nozzle form at the lower side of the plasma chamber (6) and be fed to the surface that is to be processed.

Abstract: In a capacitively coupled plasma processing apparatus, a susceptor (lower electrode) 16 within a decompression chamber 10 faces an upper electrode 46 serving as a shower head. The susceptor 16 is electrically connected with a first high frequency power supply 36 and a second high frequency power supply 38 via matching devices 40 and 42, respectively. The first high frequency power supply 36 is formed of a linear amplifier type high frequency power supply and outputs a first high frequency power RF1 for plasma generation. The second high frequency power supply 38 is formed of a switching type high frequency power supply and outputs a second high frequency power RF2 for ion attraction. A residual high frequency power removing unit 74 is connected to a high frequency power supply line 45 on a side of the second high frequency power supply 38.

Abstract: A plasma light source includes a pair of coaxial electrodes 10 facing each other, a radiation environment sustaining device 20 that supplies a plasma medium into the insides of the coaxial electrodes and holds the coaxial electrodes at a temperature and a pressure suitable for plasma generation, and a voltage application device 30 that applies a discharge voltage of an inverted polarity to each of the coaxial electrodes. Tubular discharge 4 is formed between the pair of coaxial electrodes and plasma 3 is confined in an axial direction of the coaxial electrodes.

Abstract: A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode. During the cleaning mode, the plasma is biased at a higher potential than the walls, thereby causing energetic ions from the plasma to strike the plasma wall, dislodging material previously deposited. This may be achieved through the use of one or more electrodes disposed in the plasma chamber, which are maintained at a first voltage during normal operating mode, and a second, higher voltage, during the cleaning mode.

Abstract: An extreme ultraviolet light source apparatus generating an extreme ultraviolet light from plasma generated by irradiating a target material with a laser light within a chamber, and controlling a flow of ions generated together with the extreme ultraviolet light using a magnetic field or an electric field, the extreme ultraviolet light source apparatus comprises an ion collector device collecting the ion via an aperture arranged at a side of the chamber, and an interrupting mechanism interrupting movement of a sputtered particle in a direction toward the aperture, the sputtered particle generated at an ion collision surface collided with the ion in the ion collector device.

Abstract: A plasma processing apparatus and method are disclosed which allows switching between the E and H operation modes and also increase the coupling efficiency of the RF power to the plasma. This apparatus may increase plasma density by a factor of about 1.25-1.65 for a given power output. Simultaneously, due to the high efficiency, the need to cool the antenna may be eliminated. A new antenna geometry which increases the amount of surface area for a given volume is used to take advantage of skin effects associated with RF electric current. In some embodiments, the antenna has a single turn to reduce proximity effects. The antenna may also be embedded in a ferrite material to further optimize its performance.

Abstract: A plasma torch is provided having an electrode with a frustoconical end portion. The electrode is received by a plunger during a contact start sequence of the plasma torch and is self-releasing from the torch. The electrode may include a shoulder portion that provides concentric alignment and centering of the electrode with respect to the central longitudinal axis of the components. Other components of the torch include a nozzle, a swirl ring, and retaining cup, such that the consumables of the torch may be toollessly removed and installed.

Abstract: A remote plasma system having a self-management function measures an operating state of a remote plasma generator while a remote plasma generator operates, which generates plasma and remotely supplies the generated plasma to a process chamber, thereby allowing a process manager to check the measured operating state and performing a required process control depending on an operating state. According to the remote plasma system having the self-management function, it is possible to check operating state information of the remote plasma generator and plasma treatment process progress state information in the process chamber in real time so as to determine whether the remote plasma generator normally operates and immediately sense occurrence of an error during the operation.

Abstract: The present invention discloses a system for the administration of a plasma modified field (PMF) to a subject comprising: (a) a non thermal plasma (NTP) emitting source for emitting a plasma beam; (b) a plasma modified field coupling mechanism (PMFCM) comprising a plasma beam dish having at least one opening for the passage of said plasma beam; said plasma beam dish having a first surface and a second opposite surface; and (c) a controller for controlling said PMFCM. In a main aspect of the invention, said first surface of said plasma beam dish is mounted with: (i) at least one coupling element selected from the group consisting of: (1) at least one ferroelectric element for providing said field; (2) at least one ferromagnetic element for providing said field; (3) at least one piezoelectric element for providing said field; and (4) at least one piezomagnetic element for providing said field; and (ii) at least one reflecting element.

Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.

Abstract: An electrode tile configuration is disclosed. The tile has contoured edges dimensioned to control any coupling effects. A plurality of tiles in a matrix configuration is also described.

Abstract: In an ignition circuit for igniting a plasma fed with alternating power in a gas discharge chamber, having two line sections for connection to an alternating power source and at least one line section for connection to a housing earth of the gas discharge chamber, at least one series connection of a non-linear element and an energy store is connected between the line sections for connection to an alternating power source, and the line section for connection to a housing earth of the gas discharge chamber is connected to a connection node between an energy store and a non-linear element.

Abstract: The present invention relates to inductively coupled plasma mass spectrometry (ICPMS) in which a collision cell is employed to selectively remove unwanted artefact ions from an ion beam by causing them to interact with a reagent gas. The present invention provides a first evacuated chamber (6) at high vacuum located between an expansion chamber (3) and a second evacuated chamber (20) containing the collision cell (24). The first evacuated chamber (6) includes a first ion optical device (17). The collision cell (24) contains a second ion optical device (25). The provision of the first evacuated chamber (5) reduces the gas load on the collision cell (24), by minimising the residual pressure within the collision cell (24) that is attributable to the gas load from the plasma source (1). This serves to minimise the formation, or re-formation, of unwanted artefact ions in the collision cell (24).