With Magnetic Field Patents (Class 315/111.41)
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Publication number: 20140096908Abstract: A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.Type: ApplicationFiled: October 10, 2012Publication date: April 10, 2014Applicant: LAM RESEARCH CORPORATIONInventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William R. Entley
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Patent number: 8692468Abstract: A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.Type: GrantFiled: October 3, 2011Date of Patent: April 8, 2014Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kamal Hadidi, Rajesh Dorai
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Patent number: 8680770Abstract: A power splitter and/or combiner is described. The power splitter may be provided as a broadband, passive, divide by N power splitter that may be advantageously employed in providing power to multiple electrodes within a plasma source. The power splitter comprises a transmission line and a plurality of N secondary windings arranged about the transmission lines.Type: GrantFiled: April 6, 2009Date of Patent: March 25, 2014Assignee: Dublin City UniversityInventors: Albert Rogers Ellingboe, Tomasz Michna
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Patent number: 8674327Abstract: Systems and methods for uniformly implanting materials on substrates using directed magnetic fields are provided. One such system includes a chamber configured to receive a preselected material and to enclose a first substrate, first and second rotating assemblies configured to facilitate an implantation of the preselected material onto first and second surfaces of the first substrate and including first and second rotating magnet sub-assemblies configured to direct magnetic fields onto the first and second surfaces, and an RF energizer configured to apply RF energy to the first substrate, where the first magnetic field and the second magnetic field combine to form a resultant magnetic field that is substantially parallel along the first surface, and where the implantation of the preselected material onto the first substrate occurs based on a combination of the RF energy and the resultant magnetic field.Type: GrantFiled: May 10, 2012Date of Patent: March 18, 2014Assignee: WD Media, LLCInventors: Chin Yim Poon, Yew Ming Chiong, Paul C. Dorsey, Tatsuru Tanaka
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Patent number: 8674607Abstract: There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.Type: GrantFiled: May 25, 2011Date of Patent: March 18, 2014Assignee: Tokyo Electron LimitedInventor: Hachishiro Iizuka
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Publication number: 20140062285Abstract: A plasma source for providing dissociated gas to semiconductor process chamber is provided. The plasma chamber can have at least one gas inlet and at least one chamber wall for containing the gas, a plurality of magnetic cores disposed relative to the plasma chamber such that the plasma chamber passes through each of the plurality of magnetic cores. A primary winding can be coupled to the plurality of magnetic cores. The plasma chamber can generate a toroidal plasma along a plane extending through the plasma chamber and which is at least substantially parallel to a top surface of a sample holder disposed within the semiconductor process chamber.Type: ApplicationFiled: August 29, 2012Publication date: March 6, 2014Applicant: MKS Instruments, Inc.Inventor: Xing Chen
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Patent number: 8664862Abstract: A plasma source includes a first rod forming a quarterwave antenna, surrounded by at least one parallel rod forming a coupler and which is substantially the same length as the first rod, set to a reference potential, the coupler rods being evenly distributed radially about the first rod, at a distance of around one-fifth to one-twentieth of the quarter of the wavelength.Type: GrantFiled: October 16, 2009Date of Patent: March 4, 2014Assignee: Centre National de la Recherche ScientifiqueInventors: Pascal Sortais, Thierry Lamy
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Publication number: 20140055035Abstract: A device for quick closing of an electric circuit having a main spark gap with main electrodes and a triggering device. The triggering device has an auxiliary spark gap with auxiliary electrodes for igniting an arc in the main spark gap. The auxiliary electrodes are shielded from the main spark gap by a shielding unit having channel means extending therethrough from an auxiliary spark gap facing side to a main spark gap facing side of the shielding unit. The device further includes a nozzle with a first end being most close to the auxiliary spark gap and a second end most close to the main spark gap. The first end has an inlet opening that is in connection with the channel means and the second end has an outlet opening. The invention also relates to a corresponding method and to a use of the device.Type: ApplicationFiled: November 4, 2013Publication date: February 27, 2014Inventors: Ola Jeppsson, Lars Paulsson
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Patent number: 8659229Abstract: A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.Type: GrantFiled: May 16, 2011Date of Patent: February 25, 2014Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter Kurunczi, Frank Sinclair, Costel Biloiu, Ludovic Godet, Ernest Allen
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Patent number: 8648536Abstract: A pair of coaxial electrodes 10 that face each other, a discharge-environment-maintaining device 20, and a voltage-applying device 30 are provided. Each coaxial electrode 10 includes a center electrode 12, a guide electrode 14 which surrounds the front end portion of the facing center electrode, and an insulation member 16 which insulates the center electrode and the guide electrode from each other. The insulation member 16 is formed of partially porous ceramics including an insulative dense portion 16a and a porous portion 16b. The insulative dense portion 16a includes a reservoir 18 which holds a plasma medium therein, and by the porous portion 16b, the inner surface of the reservoir 18 communicates with a gap between the center electrode 12 and the guide electrode 14 through the inside of the insulative dense portion 16a.Type: GrantFiled: August 31, 2010Date of Patent: February 11, 2014Assignee: IHI CorporationInventor: Hajime Kuwabara
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Patent number: 8648534Abstract: The present invention relates to the new structure antenna to create the uniform large area plasma using microwave. The microwave antenna to create the plasma of present invention comprises the waveguide, main body of antenna and the coaxial structure connecting part which connects said waveguide and said main body of antenna electrically, the main body of antenna comprises the conductive block in donut shape forming multiple slots, and notches are formed between the multiple slots of the conductive block and multiple permanent magnets are inserted into the notches. The multiple slots can be formed by passing through the inside and outside of the conductive block and the multiple slots can be formed with repetitive square wave pattern.Type: GrantFiled: July 6, 2010Date of Patent: February 11, 2014Assignee: Korea Basic Science InstituteInventors: Hyun Jong You, Soo Ouk Jang, Yong Ho Jung, Bong Ju Lee
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Patent number: 8635972Abstract: A plasma excitation device is described for use in depositing a film on a substrate from a plasma formed by distributed electron cyclotron resonance. The device comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna.Type: GrantFiled: October 26, 2007Date of Patent: January 28, 2014Assignees: Ecole Polytechnique, Dow Corning CorporationInventors: Pere Roca I Cabarrocas, Pavel Bulkin, Dmitri Daineka, Patrick Leempoel, Pierre Descamps, Thibault Kervyn De Meerendre
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Publication number: 20140007813Abstract: One embodiment is directed to a plasma source comprising a cavity and at least first and second electrodes. The plasma source is configured to, during a first portion of each cycle, bias the first electrode as a cathode and use the second electrode as an anode, during a second portion of each cycle, apply an ion flush bias to the first and second electrodes, during a third portion of each cycle, bias the second electrode as a cathode and use the first electrode as an anode, and during a fourth portion of each cycle, apply an ion flush bias to the first and second electrodes. Other embodiments are disclosed.Type: ApplicationFiled: July 1, 2013Publication date: January 9, 2014Inventor: Patrick Lawrence Morse
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Patent number: 8624502Abstract: An ion source is disclosed including: a chamber disposed about a longitudinal axis and containing a gas, a magnetic confinement system configured to produce a magnetic field in a confinement region within the chamber, an electron cyclotron resonance driver which produces a time varying electric field which drives the cyclotron motion of electrons located within the confinement region, the driven electrons interacting with the gas to form a confined plasma. During operation, the magnetic confinement system confines the plasma in the confinement region such that a portion of atoms in the plasma experience multiple ionizing interactions with the driven electrons to form multiply ionized ions having a selected final ionization state.Type: GrantFiled: July 16, 2009Date of Patent: January 7, 2014Assignee: Alpha Source LLCInventor: Glenn B. Rosenthal
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Patent number: 8610354Abstract: The invention is related to a gas discharge-based radiation source which emits short-wavelength radiation, wherein an emitter is ionized and compressed by pulse-shaped currents between two electrodes arranged in a vacuum chamber and is excited to form an emitting plasma. According to the invention, the plasma is preserved by means of a high-frequency sequence of pulse-shaped currents the pulse repetition period of which is adjusted so as to be shorter than a lifetime of the plasma so that the plasma is kept periodically alternating between a high-energy state of an emitting compressed plasma and a low-energy state of a relaxing plasma. For exciting the relaxing plasma to the compressed plasma, excitation energy is coupled into the relaxing plasma by making use of pulse-shaped currents with repetition frequencies between 50 kHz and 4 MHz and pulse widths equal to the pulse repetition period.Type: GrantFiled: December 5, 2011Date of Patent: December 17, 2013Assignee: XTREME technologies GmbHInventors: Max Christian Schuermann, Lutz Dippmann, Juergen Kleinschmidt, Guido Schriever
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Patent number: 8610356Abstract: An iodine fueled plasma generator system includes a plasma generator. At least one storage vessel is configured to store condensed phase iodine therein. A heating device proximate to the storage vessel is configured to create iodine vapor from the condensed phase iodine. A propellant management subsystem is configured to deliver the iodine vapor to the plasma generator. A feedback control subsystem is responsive to one or more of plasma generator discharge current, the pressure of the iodine vapor, and/or the temperature of the iodine vapor configured to regulate the flow rate of the iodine vapor to the plasma generator.Type: GrantFiled: July 27, 2012Date of Patent: December 17, 2013Assignee: Busek Co., Inc.Inventors: James J. Szabo, Jr., Bruce Pote, Surjeet Paintal, Michael Robin, Vladimir Hruby
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Patent number: 8610355Abstract: A distance from a negative output terminal of a secondary winding of the transformer to a feeding terminal of the cathode plate is longer than a distance from a positive output terminal of the secondary winding to a feeding terminal of the anode. The anode side feeding path electrically connects the feeding terminal of the anode bar to the positive output terminal of the secondary winding. The cathode side feeding path electrically connects the feeding terminal of the cathode plate to the negative output terminal of the secondary winding. A path length of the cathode side feeding path is longer than a path length of the anode side feeding path. The housing is formed by an electric conductor and is electrically connected to the cathode side feeding path.Type: GrantFiled: August 17, 2012Date of Patent: December 17, 2013Assignee: NGK Insulators, Ltd.Inventors: Tatsuya Terazawa, Wataru Shionoya
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Patent number: 8610353Abstract: An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots.Type: GrantFiled: September 2, 2011Date of Patent: December 17, 2013Assignees: Tokyo Electron Limited, National University Corporation Nagoya UniversityInventors: Hitoshi Itoh, Hidenori Miyoshi, Masaru Hori, Hirotaka Toyoda, Makoto Sekine
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Patent number: 8597428Abstract: A linear actuator comprised of an actuator body having a first portion and a second portion, each arranged along a longitudinal axis of the actuator body. A vacuum bellows is concentrically located in the first portion and is configured to seal a vacuum environment from the second portion. A linear motion shaft is concentrically located substantially within the actuator body and is configured to move in a linear direction along the longitudinal axis. An electrically conductive portion of the shaft is concentrically located substantially within the vacuum bellows and electrically insulated therefrom and is configured to receive and conduct a signal. A lift force generating portion of the shaft is concentrically located substantially within the second portion. An electrical contact pad is electrically coupled to the conductive portion of the shaft and is configured to couple the signal to another surface upon activation of the shaft.Type: GrantFiled: December 12, 2008Date of Patent: December 3, 2013Assignee: Lam Research CorporationInventors: Danny Brown, Allan Ronne, Arthur Sato, John Daugherty, Leonard Sharpless
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Publication number: 20130300289Abstract: Electrode assemblies for plasma reactors include a structure or device for constraining an arc endpoint to a selected area or region on an electrode. In some embodiments, the structure or device may comprise one or more insulating members covering a portion of an electrode. In additional embodiments, the structure or device may provide a magnetic field configured to control a location of an arc endpoint on the electrode. Plasma generating modules, apparatus, and systems include such electrode assemblies. Methods for generating a plasma include covering at least a portion of a surface of an electrode with an electrically insulating member to constrain a location of an arc endpoint on the electrode. Additional methods for generating a plasma include generating a magnetic field to constrain a location of an arc endpoint on an electrode.Type: ApplicationFiled: July 16, 2013Publication date: November 14, 2013Inventors: Peter C. Kong, Jon D. Grandy, Brent A. Detering, Larry D. Zuck
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Patent number: 8581494Abstract: A glow discharge spectrometer discharge lamp includes: a lamp body having a vacuum enclosure connected to pump elements and to injector elements for injecting an inert gas into the enclosure; a hollow cylindrical first electrode of longitudinal axis X-X?; a second electrode for receiving a sample for analysis and for holding the sample facing one end of the cylindrical electrode; electric field generator including an applicator for applying to the terminals of the electrodes an electric field that is continuous, pulsed, radiofrequency, or hybrid, and suitable for generating a glow discharge plasma in the presence of the gas; coupler elements for coupling the discharge lamp to a spectrometer suitable for measuring at least one component of the plasma; and magnetic field generator elements for generating a magnetic field having field lines oriented along the axis X-X?, the magnetic field being uniform in orientation and in intensity over an area of the sample that is not less than the inside area of the hollowType: GrantFiled: February 10, 2010Date of Patent: November 12, 2013Assignee: Horiba Jobin Yvon SASInventors: Mihai Ganciu-Petcu, Virgil Mircea Udrea, Agnes Tempez, Patrick Chapon
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Publication number: 20130285551Abstract: A method for improving the uniformity of high-frequency discharge plasma by means of frequency modulation is disclosed. In a plasma discharge chamber, there is a pair of parallel electrodes. A high-frequency power supply is adopted to feed the electrodes. The frequency range of the electromagnetic field is 13.56 MHz˜160 MHz. Discharge gas is input to form plasma. The frequency of the fed-in high-frequency electromagnetic field is under automatic tuning control, and keeps changing cyclically without stop in the course of plasma discharge. The range of the frequency change may fall into either a portion of or the entire range of 13.56 MHz˜160 MHz and makes the locations with higher plasma density on the plane in parallel with the electrodes and in the plasma discharge space changed cyclically. In a time slot longer than one frequency change cycle, the average plasma density between the parallel electrodes is uniform.Type: ApplicationFiled: June 18, 2012Publication date: October 31, 2013Applicant: BEIJING UNIVERSITY OF TECHNOLOGYInventors: Bo Wang, Lichun Xu, Ming Zhang, Ruzhi Wang, Xuemei Song, Yudong Hou, Mankong Zhu, Jingbing Liu, Hao Wang, Hui Yan
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Publication number: 20130278141Abstract: An inductively coupled plasma reactor has three concentric RF coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying only two reactive elements in the current divider circuit.Type: ApplicationFiled: March 15, 2013Publication date: October 24, 2013Inventors: Leonid Dorf, Shahid Rauf, Jonathan Liu, Jason A. Kenney, Andrew Nguyen, Kenneth S. Collins, Kartik Ramaswamy, Steven Lane
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Publication number: 20130278142Abstract: An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface.Type: ApplicationFiled: April 16, 2013Publication date: October 24, 2013Inventors: Leonid Dorf, Shahid Rauf, Jonathan Liu, Jason A. Kenney, Andrew Nguyen, Kenneth S. Collins, Kartik Ramaswamy, Steven Lane
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Publication number: 20130278135Abstract: A plasma reactor having multi discharging tubes is disclosed, through which activated gas containing ion, free radical, atom and molecule is generated through plasma discharging, and different process gases are injected into multi discharging tubes in which solid, power and gas, etc., are plasma-treated with the activated gas to perform processes including cleaning process for semiconductor, and a plasma state can be maintained even at low power.Type: ApplicationFiled: December 28, 2012Publication date: October 24, 2013Inventor: Dai-Kyu CHOI
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Patent number: 8552651Abstract: In a high frequency plasma generation system, a magnetic resonance section is provided as a frequency multiplier section between a discharge circuit and a power booster circuit. The magnetic resonance section extracts from a fundamental wave of a predetermined frequency generated by a frequency generator higher harmonic components, which are multiplied waves of the predetermined frequency and as high as two or more integer times of the fundamental wave. A resonance frequency of the power booster circuit and a first resonance coil is set to be equal to the frequency of the multiplied wave and match to equal a resonance frequency of the discharge circuit and a second resonance coil of the magnetic resonance section when a discharge electrode and a ground electrode are in a predetermined pressure range.Type: GrantFiled: August 14, 2012Date of Patent: October 8, 2013Assignees: Nippon Soken, Inc., Denso CorporationInventors: Masayoshi Sugino, Kazuki Fukatsu, Yoshitaka Tomita, Masamichi Shibata, Yuya Abe
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Patent number: 8525588Abstract: Various apparatuses and methods for a vacuum electronic device are disclosed herein. In one embodiment, a vacuum electronic device includes a vacuum housing, an array of slow wave structures inside the vacuum housing sharing a common electron beam tunnel, an electron beam input port at a first end of the common electron beam tunnel, and an electron beam output port at a second end of the common electron beam tunnel.Type: GrantFiled: July 13, 2012Date of Patent: September 3, 2013Assignee: InnoSys, Inc.Inventors: Ruey-Jen Hwu, Laurence P. Sadwick, Jishi Ren
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Publication number: 20130221847Abstract: An apparatus for detecting an arc in a plasma chamber is designed to detect the respective voltage and current values of RF power supplied to the plasma chamber and calculate the ratio of the voltage and current values to accomplish a required control of the supplying of the power. When it is determined that the arc is generated, the apparatus rapidly controls the supplying of the power to prevent damages on the plasma chamber and contaminations on the materials to be processed due to the generation of the arc.Type: ApplicationFiled: February 27, 2013Publication date: August 29, 2013Applicant: NEW POWER PLASMA CO., LTD.Inventor: New Power Plasma Co., Ltd.
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Publication number: 20130214684Abstract: The proposed method allows forming cathode arc plasma flows for high quality coatings. The plasma flows are transported in a plasma-optical system by means of a transport magnetic field generated by electromagnetic coils, super-positioning a constant magnetic field and additional variable magnetic fields deflecting the plasma flows from internal surfaces of the system's elements. In a device for implementing the proposed method, an arc power supply is connected to an anode via a coil, surrounding the anode. In a linear embodiment of the system, an electrically conductive tube section inside the anode is connected to one end of the deflection coil. The other end is connected to the positive terminal of power supply. In the system's non-linear embodiment, additional magnetic fields are established using two additional electromagnetic coils, surrounding the anode and a nonlinear part respectively. The method and device allow for a significantly reduction of losses of macroparticle-free plasma.Type: ApplicationFiled: October 31, 2011Publication date: August 22, 2013Inventors: Volodymyr Vasilievich Vasyliev, Volodymyr Evgenievich Strelnytskiy
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Publication number: 20130193848Abstract: A plasma processing apparatus and method are disclosed which allows switching between the E and H operation modes and also increase the coupling efficiency of the RF power to the plasma. This apparatus may increase plasma density by a factor of about 1.25-1.65 for a given power output. Simultaneously, due to the high efficiency, the need to cool the antenna may be eliminated. A new antenna geometry which increases the amount of surface area for a given volume is used to take advantage of skin effects associated with RF electric current. In some embodiments, the antenna has a single turn to reduce proximity effects. The antenna may also be embedded in a ferrite material to further optimize its performance.Type: ApplicationFiled: January 31, 2012Publication date: August 1, 2013Applicant: Varian Semiconductor Equipment Associations, Inc.Inventors: Costel Biloiu, Craig Chaney
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Publication number: 20130187546Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.Type: ApplicationFiled: January 20, 2012Publication date: July 25, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bo-Hung Lin, Ming-Chih Tsai, Chia-Ho Chen, Chung-En Kao
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Publication number: 20130175928Abstract: A hybrid plasma reactor includes a first plasma chamber for providing a first ring-shaped plasma discharge space, second plasma chambers providing a second plasma discharge space connected to the first plasma discharge space and coupled to magnetic flux channels, a hybrid plasma source including magnetic cores, which partially surround the first plasma chamber and have magnetic entrances forming the magnetic flux channels, and primary winding coils wound in the magnetic cores and complexly generating ring-shaped transformer-coupled plasma in the first plasma discharge space and magnetic flux channel coupled plasma in the second plasma discharge space, and an AC switching power supply for supplying plasma generation power to the primary winding coils. The hybrid plasma reactor can complexly generate magnetic flux channel coupled plasma and transformer coupled plasma so that it has a high control capability for plasma ion energy and a wide operation region from a low-pressure region to a high-pressure region.Type: ApplicationFiled: January 10, 2013Publication date: July 11, 2013Inventor: Dae-Kyu CHOI
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Patent number: 8461762Abstract: An apparatus and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions ions are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.Type: GrantFiled: July 29, 2009Date of Patent: June 11, 2013Assignee: The Regents of The University of CaliforniaInventors: Norman Rostoker, Michl Binderbauer
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Patent number: 8461763Abstract: An apparatus of an electron cyclotron resonance ion source may include: a magnet unit containing a magnet for generating magnetic fields; an ionizing chamber housing unit for generating ions through electron cyclotron resonance from a plasma; a microwave generating unit for injecting microwaves to the ionizing chamber housing unit to generate ions; and a beam integrating and guiding unit for treating the generated ions. The magnet unit may include: a bobbin for winding the magnet; a variable spacer for dividing the bobbin into a plurality of sections; and the magnet which is wound into the form of a wire or a tape in the plurality of sections formed by the variable spacer.Type: GrantFiled: November 16, 2009Date of Patent: June 11, 2013Assignee: Korea Basic Science InstituteInventors: Mi-Sook Won, Byoung-Seob Lee, Jong-Pil Kim, Jang-Hee Yoon, Jong Seong Bae, Jeong Kyu Bang, Hyosang Lee, Jinyong Park
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Publication number: 20130119865Abstract: The plasma generation device 30 is provided with a high frequency generation device 37 that generates a high frequency wave, and a high frequency radiator 15 that radiates the high frequency wave outputted from the high frequency generation device 37 to a target space 10, and generates plasma by supplying energy of the high frequency wave to the target space 10. In the plasma generation device 30, the high frequency generation device 37 is provided with an oscillator 41 that oscillates a high frequency wave, and an amplifier 42 that amplifies and outputs the high frequency wave oscillated by the oscillator 41 to the high frequency radiator 15. In the high frequency generating device 37 the amplifier 42 alone is integrated with the high frequency radiator 15, from among the oscillator 41 and the amplifier 42.Type: ApplicationFiled: January 7, 2013Publication date: May 16, 2013Applicant: IMAGINEERING, Inc.Inventor: IMAGINEERING, Inc.
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Publication number: 20130105086Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.Type: ApplicationFiled: October 22, 2012Publication date: May 2, 2013Applicant: APPLIED MATERIALS, INC.Inventor: APPLIED MATERIALS, INC.
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Publication number: 20130082599Abstract: A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.Type: ApplicationFiled: October 3, 2011Publication date: April 4, 2013Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Kamal Hadidi, Rajesh Dorai
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Patent number: 8395322Abstract: A first radio frequency (RF) generator includes a first RF power source that generates an RF power output. A first sensor generates at least one sensor signal based on the RF power output. A first signal processing unit generates magnitude and phase signals associated with the at least one sensor signal. A second signal processing unit generates a first control signal to control a frequency and a phase of the first RF power source based on the magnitude and phase signals. The first RF power source determines, based on the magnitude signals, whether to generate the RF power output in response to the first control signal or in response to a second control signal received from a second RF generator.Type: GrantFiled: September 23, 2011Date of Patent: March 12, 2013Assignee: MKS Instruments, Inc.Inventor: David J. Coumou
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Publication number: 20130049593Abstract: In a high frequency plasma generation system, a magnetic resonance section is provided as a frequency multiplier section between a discharge circuit and a power booster circuit. The magnetic resonance section extracts from a fundamental wave of a predetermined frequency generated by a frequency generator higher harmonic components, which are multiplied waves of the predetermined frequency and as high as two or more integer times of the fundamental wave. A resonance frequency of the power booster circuit and a first resonance coil is set to be equal to the frequency of the multiplied wave and match to equal a resonance frequency of the discharge circuit and a second resonance coil of the magnetic resonance section when a discharge electrode and a ground electrode are in a predetermined pressure range.Type: ApplicationFiled: August 14, 2012Publication date: February 28, 2013Applicants: DENSO CORPORATION, NIPPON SOKEN, INC.Inventors: Masayoshi SUGINO, kazuki Fukatsu, Yoshitaka Tomita, Masamichi Shibata, Yuya Abe
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Publication number: 20130034668Abstract: Provided are a plasma stream generation method, a plasma processing method, a plasma generation apparatus, and a plasma processing apparatus using same, which enable plasma processing with rotating plasma to be controllably performed with stability and thereby improved in quality. The frequencies in four quadrants Z1-Z4 are set at 7, 15, 6, and 20 Hz, respectively. This frequency variability can realize different rotational velocity of plasma in the four-portion partitioned rotational angle regions. The rotational velocities of plasmas P2, P4 are greater than those of plasmas P1, P3. Thus, the rotating plasma, which rotates at a periodically varied rotational velocity as plasma P1, plasma P2, plasma P3, and plasma P4 in that order while traveling in a circular orbit C, can be used for irradiation therewith, thereby performing uniform film formation treatment in first quadrant Z1 to fourth quadrant Z4.Type: ApplicationFiled: April 20, 2011Publication date: February 7, 2013Applicant: Ferrotec CorporationInventors: Keisuke Sagisaka, Yoshifumi Noguchi
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Patent number: 8368032Abstract: A plasma radiation source includes a vessel configured to catch a source material transmitted along a trajectory, and a decelerator configured to reduce a speed of the source material in a section of the trajectory downstream of a plasma initiation site.Type: GrantFiled: February 25, 2010Date of Patent: February 5, 2013Assignee: ASML Netherlands B.V.Inventors: Dzmitry Labetski, Erik Roelof Loopstra, Gerardus Hubertus Petrus Maria Swinkels, Tom Van Zutphen
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Publication number: 20130025788Abstract: A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.Type: ApplicationFiled: September 26, 2012Publication date: January 31, 2013Inventors: Ali Shajii, Richard Gottscho, Souheil Benzerrouk, Andrew Cowe, Siddharth P. Nagarkatti, William Entley
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Publication number: 20130026920Abstract: An iodine fueled plasma generator system includes a plasma generator. At least one storage vessel is configured to store condensed phase iodine therein. A heating device proximate to the storage vessel is configured to create iodine vapor from the condensed phase iodine. A propellant management subsystem is configured to deliver the iodine vapor to the plasma generator. A feedback control subsystem is responsive to one or more of plasma generator discharge current, the pressure of the iodine vapor, and/or the temperature of the iodine vapor configured to regulate the flow rate of the iodine vapor to the plasma generator.Type: ApplicationFiled: July 27, 2012Publication date: January 31, 2013Applicant: BUSEK COMPANY, INC.Inventors: James J. Szabo, JR., Bruce Pote, Surjeet Paintal, Michael Robin, Vladimir Hruby
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Publication number: 20130026919Abstract: A pulsed electrostatic/electric field generator apparatus providing a source of large quantity, free slow-speed high energy free electrons, or high energy positive ions, contained in an electrostatic/electric field capacity exceeding 1 Joule. The pulsed electrostatic/electric field generator apparatus encapsulates an enclosed non-equilibrium, non-thermal pulsed power plasma. A key subcomponent of this apparatus incorporates an innovative unipolar piezoelectric capacitor creating high voltage nanosecond rise time pulses in a multistage high energy step-up pulsed plasma generation sequence of steps. The resulting multi-Joule electrostatic/electric field is then tapped to provide a source of current and/or potential for use by external loads.Type: ApplicationFiled: July 28, 2011Publication date: January 31, 2013Inventor: Kirk W. Rosener
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Patent number: 8362444Abstract: A patterned beam of radiation is projected onto a substrate. A reflective optical element is used to help form the radiation beam from radiation emitted from a plasma region of a plasma source. In the plasma source, a plasma current is generated in the plasma region. To reduce damage to the reflective optical element, a magnetic field is applied in the plasma region with at least a component directed along a direction of the plasma current. This axial magnetic field helps limit the collapse of the Z-pinch region of the plasma. By limiting the collapse, the number of fast ions emitted may be reduced.Type: GrantFiled: October 19, 2010Date of Patent: January 29, 2013Assignee: ASML Netherlands B.V.Inventors: Vladimir Vitalevitch Ivanov, Vadim Yevgenyevich Banine, Konstantin Nikolaevitch Koshelev
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Publication number: 20130020939Abstract: Provided is an atmospheric plasma equipment and a waveguide for the same. The atmospheric plasma equipment according to this disclosure includes: an oscillator supplying an electromagnetic wave; and a waveguide into which the electromagnetic wave generated from the oscillator is input to be propagated therethrough, wherein the waveguide includes at least one or more steps, and plasma is generated at a waveguide region including a final short portion. The atmospheric plasma equipment may simultaneously attain an effect of causing concentration of an electromagnetic wave applied through the waveguide with one or more steps and an effect of stably maintaining generated plasma.Type: ApplicationFiled: July 22, 2011Publication date: January 24, 2013Inventors: Ik Nyeon KIM, Young Yeon JI
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Publication number: 20130015766Abstract: Systems and methods for formation of an ultra high frequency atmospheric pressure plasma jet are presented. A magnetic loop has first and second ends and a gap for generating the plasmas. An inner arc provides RF power to the magnetic loop. Use of the described structure allows for generation of plasmas in air and in inert gases such as argon and helium. Various properties, including the non-thermal nature and shape of the plasma jet are discussed. Applications for utilizing the non-thermal plasma jet are provided.Type: ApplicationFiled: May 11, 2012Publication date: January 17, 2013Applicant: The George Washington UniversityInventors: Mazdak TAGHIOSKOUI, Mona ZAGHLOUL
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Patent number: 8327816Abstract: Stable and highly efficient combustion/reaction is provided, even when fuel ratio of mixture is decreased and combustion/reaction of the lean mixture is performed in a heat engine such as a reciprocating engine, for controlling dielectric constant of mixture in a combustion/reaction chamber 8 by introducing water and/or exhaust gas into the combustion/reaction chamber, by introducing water and/or exhaust gas into the combustion/reaction chamber. A microwave radiation antenna for irradiation of the combustion/reaction chamber, and a discharge unit for igniting the mixture in the combustion/reaction chamber are provided. The dielectric constant of the mixture before the combustion/reaction of the mixture is controlled so that the resonance frequency of the mixture corresponds to the frequency of the microwave.Type: GrantFiled: September 23, 2011Date of Patent: December 11, 2012Assignee: Imagineering, Inc.Inventor: Yuji Ikeda
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Patent number: 8324592Abstract: Multiple control electrodes are provided asymmetrically within the plasma chamber of an ion source at respective positions along the length of the plasma chamber. Biasing the control electrodes selectively can selectively enhance the ion extraction current at adjacent positions along the length of the extraction slit. A method of generating an ion beam is disclosed in which the strengths of the transverse electric fields at different locations along the length of the plasma chamber are controlled to modify the ion beam linear current density profile along the length of the slit. The method is used for controlling the uniformity of a ribbon beam.Type: GrantFiled: November 2, 2010Date of Patent: December 4, 2012Assignee: Twin Creeks Technologies, Inc.Inventors: Geoffrey Ryding, Drew Arnold, William H. Park, Ronald Horner
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Publication number: 20120293071Abstract: A plasma equipment comprising a microwave oscillator for generating a predetermined microwave band, a microwave resonant cavity for allowing the predetermined microwave band to resonate, and microwave radiation means for radiating the microwave into the microwave resonant cavity, wherein the microwave radiation means is a microwave radiation antenna having the shape and the size so as to form a strong electric field of the microwave in a plasma generation field formed by the microwave.Type: ApplicationFiled: July 20, 2012Publication date: November 22, 2012Applicant: IMAGINEERING, Inc.Inventor: Yuji Ikeda