Abstract: Some embodiments include apparatus and methods having dice arranged in a stack. The dice include at least a first die and a second die, and a connection coupled to the dice. The connection may be configured to transfer control information to the first die during an assignment of a first identification to the first die and to transfer the control information from the first die to the second die during an assignment of a second identification to the second die.

Abstract: A method and system are provided for implementing enhanced memory performance management with configurable bandwidth versus power usage in a chip stack of memory chips. A chip stack of memory chips is connected in a predefined density to allow a predefined high bandwidth connection between each chip in the stack, such as with through silicon via (TSV) interconnections. Large-bandwidth data transfers are enabled from the memory chip stack by trading off increased power usage for memory performance on a temporary basis.

Abstract: A configurable memory subsystem includes a memory module with a circuit board having a first and a second memory-containing device (MCD) pair mounted thereto. Each MCD pair has a first MCD in communication with a second MCD. Each MCD has an input port, an output port, and a memory each communicating with a bridge. In response to a command, the bridge transfers at least one of a portion of a data packet from the input port to the output port or to the memory, or transfers a portion of a memory packet from the memory to the output port. A loop-back device receives the command and the data packet form the first MCD pair and transmits the command and data packet to the second MCD pair.

Abstract: A device that includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip includes a first terminal, a second terminal, a first circuit electrically coupled to the second terminal, a second circuit electrically coupled to the first terminal and the first circuit, and a third circuit electrically coupled to the second circuit. The second semiconductor chip includes a third terminal, a fourth terminal, a fourth circuit electrically coupled to the fourth terminal, a fifth circuit electrically coupled to the third terminal and the fourth circuit, and a sixth circuit electrically coupled to the fifth circuit.

Abstract: A memory module, system and method of forming the same includes a memory module including a plurality of memory devices having a first portion of memory devices cooperatively forming a first rank of memory devices and a second portion of memory devices cooperatively forming a second rank of memory devices. The first and second portions of memory devices are grouped into a plurality of memory device stacks, wherein each of the plurality of memory device stacks includes at least one of the plurality of memory devices coupled to a first portion of a plurality of DQ signals and at least another one of the plurality of memory devices coupled to a different second portion of the plurality of DQ signals.

Abstract: Memory die, stacks of memory dies, memory devices and methods, such as those to construct and operate such die, stacks and/or memory devices are provided. One such memory die includes an identification configured to be selectively coupled to an external select connection node depending on how the die is arranged in a stack. The identification circuit can determine an identification of its respective memory die responsive to how, if coupled, the identification circuit is coupled to the external select connection node.

Abstract: A magnetic sensor comprises a support; a nonmagnetic conductive layer disposed on the support; a fixed magnetization layer disposed on a first part of the nonmagnetic conductive layer and on the support; a free magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part and on the support; and a nonmagnetic low resistance layer, disposed on a part overlapping the nonmagnetic conductive layer in at least one of the fixed magnetization layer and free magnetization layer, having an electrical resistivity lower than that of the one layer.

Abstract: A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

Abstract: A memory system is provided in which at least one DRAM chip and a memory controller chip are mounted in a side-by-side relationship on an interposer. The DRAM chip is connected to the interposer via a Wide I/O interface to enable the DRAM chip and the memory controller chip to communicate with each other via the Wide I/O interface. The memory controller chip has a SerDes interface for communicating with a SerDes interface of an integrated circuit (IC) chip of the memory system.

Abstract: Large capacity memory systems are constructed using stacked memory integrated circuits or chips. The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.

Abstract: Embodiments of the present invention provide local checkpoint memories that are closely coupled to the processor of a computing system used during normal operation. The checkpoint memory may be coupled to the processor through a peripheral bus or a memory bus. The checkpoint memory may be located on a same semiconductor substrate or circuit board as the processor. The checkpoint memory may be located on a same semiconductor substrate as a main memory used by the processor during normal operation. The checkpoint memory may be included in a memory hub configuration, with a checkpoint memory hub provided for access to the checkpoint memory.

Abstract: Large capacity memory systems are constructed using stacked memory integrated circuits or chips. The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.

Abstract: A memory device includes a substrate and a plurality of cell arrays stacked above the substrate. The cell arrays have bit lines coupled to first ends of memory cells and word lines coupled to the other ends. Each of the memory cells includes a variable resistance element to be set at a resistance value. While a selected bit line is set at a certain potential, word lines coupled to different memory cells, which are coupled in common to the selected bit line, are sequentially driven, so that different memory cells are accessed in a time-divisional mode.

Abstract: A device that includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip includes a first terminal, a second terminal, a first circuit electrically coupled to the second terminal, a second circuit electrically coupled to the first terminal and the first circuit, and a third circuit electrically coupled to the second circuit. The second semiconductor chip includes a third terminal, a fourth terminal, a fourth circuit electrically coupled to the fourth terminal, a fifth circuit electrically coupled to the third terminal and the fourth circuit, and a sixth circuit electrically coupled to the fifth circuit.

Abstract: A portable, high-capacity data storage device for storage, transport, and retrieval of multi-terabyte-level data sets comprises a plurality of individual main data storage units coupled to a data bus and a controller isolated from the data bus. The data storage device can be coupled to an external system to establish data access connections between the external system and the individual main data storage units via a first communication path comprising the data bus, with the controller and external system communicating with one another via a second communication path logically isolated from the first communication path. The data storage device can be provided with sensors that enable the controller to monitor the surrounding environment, and can be provided with a non-volatile display.

Abstract: A motherboard assembly includes a motherboard and a serial advanced technology attachment dual-in-line memory module (SATA DIMM) module with a circuit board. The motherboard includes an expansion slot and a storage device interface. An edge connector is set on a bottom edge of the circuit board to be detachably engaged in the expansion slot, and a notch is set on a bottom edge of the circuit board to engage in a protrusion of the expansion slot. A SATA connector of the circuit board is connected to the storage device interface of the motherboard.

Abstract: A memory module and a layout method of the memory module. The memory module includes memory devices connected to corresponding tabs through corresponding damping resistors formed on a printed circuit board and includes a first signal line group in a first region between the memory devices and the damping resistors and a second signal line group in a second region between the corresponding damping resistors and the connecting terminals.

Abstract: A serial advanced technology attachment dual in-line memory module (SATA DIMM) includes a control chip having a first input output (I/O) pin and a second I/O pin, first and second switches, a resistor, and a number of storage chips connected to the control chip. First terminals of the first and second switches are respectively connected to the first and second I/O pins. Second terminals of the first and second switches are grounded. The first and second I/O pins receive different signals through controlling the first and second switches, to change work modes of the storage chips.

Abstract: A configurable memory subsystem includes a memory module with a circuit board having a first and a second memory-containing device (MCD) pair mounted thereto. Each MCD pair has a first MCD in communication with a second MCD. Each MCD has an input port, an output port, and a memory each communicating with a bridge. In response to a command, the bridge transfers at least one of a portion of a data packet from the input port to the output port or to the memory, or transfers a portion of a memory packet from the memory to the output port. A loop-back device receives the command and the data packet form the first MCD pair and transmits the command and data packet to the second MCD pair.

Abstract: All interface pins for transmitting and receiving a signal having a predetermined function of a semiconductor integrated circuit element are formed on an outer periphery of the semiconductor integrated circuit element along one side of the semiconductor integrated circuit element. The one side of the semiconductor integrated circuit element is adjacent to two of sides of a BGA substrate, the two sides being not parallel to the one side. Of balls provided on the BGA substrate, balls electrically connected to the interface pins for transmitting and receiving a signal having a predetermined function are provided between the one side of the semiconductor integrated circuit element and the two sides of the BGA substrate.

Abstract: A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogenide material and a memory cell constituted of a diode are stacked, and an initialization condition and a rewriting condition are changed in accordance with the layer where a selected memory cell is located. A current mirror circuit is selected in accordance with an operation, and at the same time, the initialization condition and the rewriting condition (here, reset condition) are changed in accordance with the operation by a control mechanism of the reset current in a voltage selection circuit and a current mirror circuit.

Abstract: A semiconductor die having a functional circuit (e.g., a memory array) and a decode circuit suitable for use in a stacked die semiconductor component (e.g., a random access memory component) is described. The decode circuit permits individual die in a stacked die structure to automatically determine their location or position in the stack and, in response to this determination, selectively pass one or more external control signals (e.g., chip select and clock enable signals) to the decode circuit's associated functional circuit based on inter-die connection patterns. This “self-configuring” capability permits all die designated for a specified functionality (e.g., a memory module including four vertically aligned die) to be uniformly or consistently manufactured. This, in turn, can reduce the cost to manufacture stacked die components.

Abstract: A permanent solid state memory device is disclosed. Recording data in the permanent solid state memory device forms voids in a data layer between a first wire array and a second wire array. Wires of the first wire array extend transversely to wires in the second wire array. The data layer is at least partially conductive such that a voltage applied between a selected first wire in the first wire array and a selected second wire in the second wire array creates a heating current through the data layer at a data point between the first wire and the second wire. The heating current causes a data layer material to melt and recede to form a permanent void. Control elements are operably connected to apply voltages to predetermined combinations of wires to form permanent voids at data points throughout the solid state memory device.

Abstract: The present description relates to non-volatile memory arrays and the operation thereof In at least one embodiment, the non-volatile memory array may include a plurality of memory modules coupled in a daisy chain with enable in/out signals, and a single chip enable signal coupled in parallel to each memory module. With such a configuration, all memory units within each of the memory modules of each memory array may be addressed with the single chip enable signal.

Abstract: Memory die, stacks of memory dies, memory devices and methods, such as those to construct and operate such die, stacks and/or memory devices are provided. One such memory die includes an identification configured to be selectively coupled to an external select connection node depending on how the die is arranged in a stack. The identification circuit can determine an identification of its respective memory die responsive to how, if coupled, the identification circuit is coupled to the external select connection node.

Abstract: A memory storage system for installing in a wall, building, structure, or tombstone. The system features a microprocessor and memory storage component for storing pictures, videos, audio files, personal information, building plans, building information, inspection information, or a combination thereof. The system can be connected to a computer system via a cable so that the information can be accessed.

Abstract: A DRAM cell and method for storing information in a dynamic random access memory using an electrostatic actuator beam to make an electrical connection between a storage capacitor and a bit line.

Abstract: A semiconductor device according to the present invention includes plural controlled chips CC0 to CC7 that hold mutually different layer information, and a control chip IF that supplies in common layer address signals A13 to A15 and a command signal ICMD to the controlled chips. Each bit that constitutes the layer address signals A13 to A15 is transmitted via at least two through silicon vias that are connected in parallel for each controlled chip out of plural first through silicon vias. Each bit that constitutes the command signal ICMD is transmitted via one corresponding through silicon via that is selected by an output switching circuit and an input switching circuit. With this configuration, the layer address signals A13 to A15 reach the controlled chips earlier than the command signal ICMD.

Abstract: A module having first and second memory devices and a termination component. A first signal line is coupled to the first memory device to provide first data thereto, the first data to be stored in a memory array of the first memory device during a write operation. A second signal line is coupled to the second memory device to provide thereto, the second data to be stored in a memory array of the second memory device during the write operation. A control signal path is coupled to the first memory device, the second memory device and the termination component such that a write command propagating on the control signal path propagates past the first memory device and the second memory device before reaching the first termination component, wherein the write command specifies the write operation.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first memory chip, a second memory chip, and a control chip. The first chip includes a first inductor configured to transmit/receive a signal, and a memory cell. The second chip is disposed on the first chip and includes a second inductor configured to transmit/receive a signal, and a memory cell. The control chip includes a control circuit configured to control the first and second chips, and a third inductor configured to transmit/receive a signal to/from the first and second inductors. The outer peripheries of the first and second inductors are included in a closed space produced by extending the outer periphery of the third inductor in a direction perpendicular to a plane that includes the third inductor. The inductance of the third inductor is greater than at least one of the inductances of the first and second inductors.

Abstract: Described are systems that employ configurable on-die termination elements that allow users to select from two or more termination topologies. One topology is programmable to support rail-to-rail or half-supply termination. Another topology selectively includes fixed or variable filter elements, thereby allowing the termination characteristics to be tuned for different levels of speed performance and power consumption. Termination voltages and impedances might also be adjusted.

Abstract: A semiconductor apparatus has a plurality of chips stacked therein. Read control signals for controlling read operations of the plurality of chips are synchronized with a reference clock such that the time taken from the application of a read command to the output of data for each of the plurality of chips is maintained substantially the same.

Abstract: A three dimensional memory module and system are formed with at least one slave chip stacked over a master chip. Through semiconductor vias (TSVs) are formed through at least one of the master and slave chips. The master chip includes a memory core for increased capacity of the memory module/system. In addition, capacity organizations of the three dimensional memory module/system resulting in efficient wiring is disclosed for forming multiple memory banks, multiple bank groups, and/or multiple ranks of the three dimensional memory module/system.

Abstract: A semiconductor device to improve layout uniformity may include an active region formed in a substrate, a dummy active region formed in the substrate and separated from the active region, a word line crossing over the active region, and a dummy word line. The dummy word line is formed over the dummy active region to overlap at least part of the dummy active region and may have an end positioned within the dummy active region.

Abstract: In one embodiment of the invention, a memory integrated circuit is provided including a memory array, a register, and control logic coupled to the register. The memory array in the memory integrated circuit stores data. The register includes one or more bit storage circuits to store one or more identity bits of an identity value. The control logic provides independent sub-channel memory access into the memory integrated circuit in response to the one or more identity bits stored in the register.

Abstract: A memory chip includes a memory circuit unit configured to include memory cells for storing data, a data input and output (I/O) buffer unit configured to include a plurality of data I/O buffer circuits, wherein one of the data I/O buffer circuits is operated by default in order to input and output data to and from the memory chip, a plurality of driver control units configured to generate a plurality of driver addition signals to enable corresponding ones of the data I/O buffer circuits depending on whether a power supply voltage has been received, and a controller configured to generate I/O enable signals for controlling an operation of the data I/O buffer unit.

Abstract: Methods and apparatus are provided for a solid state non-volatile storage sub-system of a computer. The storage sub-system includes a write-once storage sub-system memory device and a write-many storage sub-system memory device. The write-once storage sub-system memory device includes a recoverable system configuration. Numerous other aspects are provided.

Abstract: A smart card is foamed of a memory having light-sensing cells to sense externally supplied light and generate a detection signal in response to the externally supplied light being sensed by the light-sensing cells, and a reset control circuit generating a reset signal in response to the detection signal, the reset signal operating to reset the smart card.

Abstract: A three dimensional memory module and system are formed with at least one slave chip stacked over a master chip. Through semiconductor vias (TSVs) are formed through at least one of the master and slave chips. The master chip includes a memory core for increased capacity of the memory module/system. In addition, capacity organizations of the three dimensional memory module/system resulting in efficient wiring is disclosed for forming multiple memory banks, multiple bank groups, and/or multiple ranks of the three dimensional memory module/system.

Abstract: A multi-chip package memory includes an interface chip generating at least one reference signal defined in relation to a reference process variation, and a stacked plurality of memory chips electrically connected to the interface chip via a vertical connection path and receiving the reference clock signal via the vertical connection path, wherein each one of the stacked plurality of memory chips is characterized by a process variation and actively compensates for said process variation in relation to the reference signal.

Abstract: In a method of manufacturing a semiconductor device, element properties of an element property extraction pattern formed on a semiconductor wafer is extracted as element properties of a current control element corresponding to the element property extraction pattern. A supply energy to the current control element is set which is formed between nodes on the semiconductor wafer, based on the extracted element properties. The set supply energy is supplied to the current control element to irreversible control an electrical connection between the nodes through the device breakdown by the current control element.

Abstract: Large capacity memory systems are constructed using stacked memory integrated circuits or chips. The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.

Abstract: A memory module, system and method of forming the same includes a memory module including a plurality of memory devices having a first portion of memory devices cooperatively forming a first rank of memory devices and a second portion of memory devices cooperatively forming a second rank of memory devices. The first and second portions of memory devices are grouped into a plurality of memory device stacks, wherein each of the plurality of memory device stacks includes at least one of the plurality of memory devices coupled to a first portion of a plurality of DQ signals and at least another one of the plurality of memory devices coupled to a different second portion of the plurality of DQ signals.

Abstract: A DIMM riser card that includes a PCB having a first edge, a second edge, and one or more faces. The first edge of the PCB is configured for insertion into a main board DIMM socket. The first edge includes electrical traces that electrically couple to a memory bus. The DIMM riser card includes an angled DIMM socket mounted on one face of the PCB, where the angled DIMM socket is configured to accept a DIMM at an angle not perpendicular to the PCB and electrically couple the DIMM to the memory bus. The DIMM riser card includes a straddle mount DIMM socket mounted on the second edge of the PCB. The straddle mount DIMM socket is configured to accept a DIMM and electrically couple the DIMM to the memory bus through the electrical traces on the first edge of the PCB.

Abstract: A memory module includes an electronic printed circuit board with at least one contact strip, a plurality of integrated memory components, at least one first and one second buffer component, and a number of conductor tracks, which proceed from the contact strip and which are arranged on or in the printed circuit board. The conductor tracks include data lines, control lines and address lines. The conductor tracks lead from the contact strip to the buffer components or to one of the buffer components. The printed circuit board has conductor tracks that are interposed between the first buffer component and the second buffer component and that lead from the first buffer component to the second buffer component.

Abstract: A portable, high-capacity data storage device for storage, transport, and retrieval of multi-terabyte-level data sets comprises a plurality of individual main data storage units coupled to a data bus and a controller isolated from the data bus. The data storage device can be coupled to an external system to establish data access connections between the external system and the individual main data storage units via a first communication path comprising the data bus, with the controller and external system communicating with one another via a second communication path logically isolated from the first communication path. The data storage device can be provided with sensors that enable the controller to monitor the surrounding environment, and can be provided with a non-volatile display.

Abstract: Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.

Abstract: Systems, memory modules and methods of configuring systems including memory modules are provided. The memory modules include device parameters specifically corresponding to memory devices of the memory module. The device parameters may be retrieved from a database, and the system may be configured in accordance with the device parameters retrieved from the database.

Abstract: A memory device includes a single or a plurality of memory chips. In the memory device (memory module), the single memory chip or each of the plurality of memory chips has a memory part storing control data such as specification data and function data, and control data stored on the memory part is rewritable. Control data stored on the memory part separately disposed on each memory chip enables separate use of the memory chip, which improves compatibility and flexibility of the memory.

Abstract: In one embodiment of the invention, a memory integrated circuit is provided including a memory array, a register, and control logic coupled to the register. The memory array in the memory integrated circuit stores data. The register includes one or more bit storage circuits to store one or more identity bits of an identity value. The control logic provides independent sub-channel memory access into the memory integrated circuit in response to the one or more identity bits stored in the register.