Abstract: An integrated circuit includes memory circuitry with a number of bit line structures, each including at least three bit lines; a number of word lines that intersect with the bit line structures at a number of sites; and a number of switching devices located at the sites. A number of VSS planes are interconnected with the switching devices. The switching devices and the VSS planes are formed at a first level. The VSS planes can be formed as substantially complementary interlocking regions that also form functional portions of the switching devices. The switching devices can be connected between an adjacent one of the word lines and a selected one of the bit lines of an adjacent one of the bit line structures for selective electrical conduction therebetween upon activation by the adjacent one of the word lines.

Abstract: Methods and apparatus for interfacing a memory device with a host device are 5 disclosed. According to one aspect of the present invention, an apparatus which enables a non-volatile memory device to communicate with a host device includes a body and an element. The body has a boundary, and the element is arranged to move at least partially within the body. The element includes an interface which may be coupled to the host device when the element is in a first position with respect to the body. The element is 10 also arranged to receive the non-volatile memory device and to move the non-volatile memory device and the interface with respect to the body. In one embodiment, when the element is in the first position with respect to the body, the interface at least partially extends past the boundary associated with the body.

Abstract: A card device has a regulator (5), a first internal circuit (6) and a second internal circuit (7), and the regulator supplies, to the second internal circuit, an internal voltage generated by dropping an external voltage (VCC) when the external voltage is high, and exactly supplies the external voltage as the internal voltage to the second internal circuit when the external voltage is low, and the external voltage is supplied as an operating power source to the first internal circuit and a transition to a low consumed power state is carried out if a command is not input for a certain period. The card device stops the operation of the regulator and suppresses the supply of the internal voltage to the second internal circuit in the transition to the low consumed power state. In the low consumed power state, consequently, it is possible to suppress a power consumption in each of the regulator and the second internal circuit in the card device.

Abstract: A semiconductor device uses a package substrate on which bonding leads are formed respectively corresponding to bonding pads for address and data which are distributed to opposing first and second sides of a memory chip and address terminals and data terminals which are connected to the bonding leads. The semiconductor device further includes an address output circuit and a data input/output circuit which also serves for memory access and a signal processing circuit having a data processing function. A semiconductor chip having bonding pads connected to the bonding leads corresponding to the address terminals of the package substrate and bonding pads connected to the bonding leads corresponding to the data terminals of the package substrate and distributed to two sides out of four sides and the above-mentioned memory chip are mounted on the package substrate in a stacked structure.

Abstract: A BLT can include a different channel length, channel width, or both to compensate for bit line loading effects. The channel length and/or channel width of the transistor structure can be configured so as to achieve a desired loading. Thus, the bit line transistor structure can improve global metal bit line loading uniformity and provide greater uniformity in bit line bias. Additionally, the greater uniformity in bit line bias can improve reliability.

Abstract: Disclosed is a memory module and a method of calibrating an impedance of a semiconductor memory device of the memory module, where the memory module includes semiconductor memory devices each having a separate terminal for calibrating impedance characteristics, and a reference resistor commonly connected to the separate terminals, such that the number of reference resistors used in calibration of impedance characteristics of an off-chip driver or an on-die termination circuit of the semiconductor memory device is reduced.

Abstract: A method of forming a stacked memory module from a plurality of memory devices is provided. Each of the plurality of memory devices is modified to include a logic block for decoding a plurality of chip select signals. A first high density memory module is also provided that includes the modified memory devices and a serial presence detect device. The first high density memory module is included within an electronic system. Also, an additional method of forming a stacked memory module is provided, the method requiring modification of an address buffer to include a logic block for decoding a plurality of chip select signals. A second high density memory module is also provided that includes the modified address buffer and a serial presence detect device. The second high density memory module is included within an electronic system.

Abstract: A DRAM adopting a single-intersection memory cell array having randomly accessible data registers accessed whenever the chip is accessed externally. When data items recorded in the data registers are simultaneously written in the memory cell array, the data items are encoded. When data items are read from the memory cell array into the data registers, the data items are decoded. The margin is enhanced because array noise derived from reading is reduced. In addition, the access time of the DRAM is also reduced.

Abstract: A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.

Abstract: The semiconductor memory system includes a memory controller, N system data buses, and first through P-th memory module groups. The N system data buses are connected to the memory controller and respectively have a width of M/N bits. The first through P-th memory module groups are connected to the N system data buses and respectively have N memory modules. In each of the first through P-th memory module groups, a different one of the N system data buses is connected to each of the N memory modules, and each of the N system data buses has a data bus width of M/N bits. The first through P-th memory module groups are operated in response to first through P-th corresponding chip select signals. M is the bit-width of an entire system data bus of the semiconductor memory system. The N system data buses are wired such that data transmission times are the same from each N memory modules that operate in response to the same chip select signal to the memory controller.

Abstract: Memory apparatus and methods align a core clock for a memory agent to one of a plurality of lanes. A memory agent may have logic circuit between the lanes and a core clock generator to align the core clock to one of the lanes. A deskew circuit may be coupled to the logic circuit. Other embodiments are described and claimed.

Abstract: To provide laminated type semiconductor memory devices that can improve the yield of chips without complicating wirings and components. There are provided a plurality of laminated semiconductor chip layers, and chip selection pads provided on each of the chip layers, which are mutually connected across the chip layers, respectively, such that a chip selection signal for selecting each of the chip layers is commonly inputted in each of the chip layers. Each of the chip layers is equipped with program circuits each of which is capable of programming an output signal, and a chip selection judging circuit that judges a chip selection based on the chip selection signal and an output signal of the program circuit. As a result, address information can be set afterwards by the program circuit, such that one kind of chips may suffice in the chip manufacturing stage. Because the chip selection signal is inputted in the common chip selection pads, independent wirings for the respective chips are not required.

Abstract: A method and system for expanding the number of memory modules that can be coupled to a motherboard such as a server blade is presented. A stack of multiple Dual In-line Memory Modules (DIMMs) is formed using novel double-connector-edge DIMMs, which each have connector pins on their opposite edges. Alternatively, the double-connector-edge DIMM is used to couple the motherboard to a memory expansion card that has multiple single-edge pinned DIMMs coupled in a “daisy-chain.

Abstract: A computer body outputting a predetermined number of address signals A0 to A11 and a plurality of select signals CSO and CSI, generates a memory select signal CS and an additional address signal A12 added to the signals A0 to A11 according to the inputted signals CSO and CSI, and provides the signal CS, signal A12, and signals A0 to AI1 to a 256-megabit SDRAM (memory), so that the computer body can access the corresponding data. The computer body can access the data corresponding to the generated additional address signal A12 and predetermined number of the address signals A0 to A11.

Abstract: A memory module has a plurality of DRAMs (115), which share a bus line, on the front surface and the back surface of a board. The bus line is connected through a via hole (113) from a terminal (111) to one end of a strip line (112), and the other end of the strip line is connected to a strip line in the other layer through a via hole (119) provided for looping back the line. A termination resistor (120), provided near a termination voltage terminal (VTT), is connected to the looped-back strip line in the other layer through a via hole. The DRAM terminals are connected to the strip line each through a via hole. This memory module is mounted on a motherboard, on which a memory controller is provided, through a connector. The effective characteristic impedance of the bus line is matched with the characteristic impedance of the line in the motherboard.

Abstract: Memory apparatus and methods accumulate data between a data path and a memory device. A memory agent may have a data accumulator between a redrive circuit and a memory device or interface. The data accumulator may accumulate data to or from the redrive circuit. Other embodiments are described and claimed.

Abstract: In a memory circuit integrated on a semiconductor chip, an interface system is formed between the connection pads and associated internal signal lines and contains a respective separate and complete interface circuit for each of at least two different modes of operation of the memory circuit. Each interface circuit is arranged distributed over a plurality of spaced sections of the chip surface such that sections of different interface circuits alternate with one another. Only the interface circuit which is associated with the mode of operation which is desired when the memory circuit is being used is operatively connected between the connection pads and the associated internal signal lines by metallizations in the topmost metallization plane.

Abstract: A very small computer memory card is densely packed with a large number of flash EEPROM integrated circuit chips. A computer memory system provides for the ability to removably connect one or more of such cards with a common controller circuit that interfaces between the memory cards and a standard computer system bus. Alternately, each card can be provided with the necessary controller circuitry and thus is connectable directly to the computer system bus. An electronic system is described for a memory system and its controller within a single memory card. In a preferred physical arrangement, the cards utilize a main circuit board with a plurality of sub-boards attached thereto on both sides, each sub-board carrying several integrated circuit chips.

Abstract: A computer system includes a controller linked to a plurality of memory modules each of which has an optical memory hub and several memory devices coupled to the memory hub. The controller communicates with the memory hubs by coupling optical signals to and from the memory hubs using an optical communication path, such as one or more optical waveguides. In one example of the invention, the memory modules transmit and receive optical signals having different wavelengths. In another example of the invention, the memory modules receive optical signals corresponding to memory command and address signals at different wavelengths, but they transmit and receive optical signals corresponding to memory commands at the same wavelength.

Abstract: A computer system includes a controller linked to a plurality of memory modules each of which has an optical memory hub and several memory devices coupled to the memory hub. The controller communicates with the memory hubs by coupling optical signals to and from the memory hubs using an optical communication path, such as one or more optical waveguides. In one example of the invention, the memory modules transmit and receive optical signals having different wavelengths. In another example of the invention, the memory modules receive optical signals corresponding to memory command and address signals at different wavelengths, but they transmit and receive optical signals corresponding to memory commands at the same wavelength.

Abstract: To provide laminated type semiconductor memory devices that can improve the yield of chips without complicating wirings and components. There are provided a plurality of laminated semiconductor chip layers, and chip selection pads provided on each of the chip layers, which are mutually connected across the chip layers, respectively, such that a chip selection signal for selecting each of the chip layers is commonly inputted in each of the chip layers. Each of the chip layers is equipped with program circuits each of which is capable of programming an output signal, and a chip selection judging circuit that judges a chip selection based on the chip selection signal and an output signal of the program circuit. The program circuit is equipped with writable nonvolatile memory cells, and a logical circuit that is connected to the nonvolatile memory cells and outputs a signal that is different depending on a recoded content in the nonvolatile memory cells, such that a step of melting fuses is not necessary.

Abstract: The invention pertains to an electro-optical connector module comprising a connection part, at least one optical transmitter circuit and/or optical receiver circuit and at least one electro-optical converter for respectively converting electrical signals into optical signals or vice versa. The module further comprises at least two substantially flat and substantially parallel electrically insulating sheets on which the transmitter circuit and/or receiver circuit and the converter are mounted. It is preferred that the connector module according, comprises at least one optical transmitter circuit, at least one optical receiver circuit and at least two electro-optical converters for respectively converting electrical signals into optical signals and vice versa, wherein the optical transmitter circuit and a first converter are mounted on a first sheet and the optical receiver circuit and a second converter are mounted on a second sheet.

Abstract: A semiconductor memory module includes a wiring board in or on which at least a number of data line runs are conducted in a respective width of k bits and which exhibits a number of memory ranks which in each case have n memory chips, and at least one signal driver/control chip (hub), a k-bit-wide data line run in each case connecting a memory chip from each memory rank to the signal driver/control chip (hub) and four or eight memory ranks in each case being arranged distributed on the top and bottom of the wiring board along the associated data line run in such a manner that, in operation, the load is distributed along the respective data line run.

Abstract: A method of forming a stacked memory module from a plurality of memory devices is provided. Each of the plurality of memory devices is modified to include a logic block for decoding a plurality of chip select signals. A first high density memory module is also provided that includes the modified memory devices and a serial presence detect device. The first high density memory module is included within an electronic system. Also, an additional method of forming a stacked memory module is provided, the method requiring modification of an address buffer to include a logic block for decoding a plurality of chip select signals. A second high density memory module is also provided that includes the modified address buffer and a serial presence detect device. The second high density memory module is included within an electronic system.

Abstract: A storage apparatus 10 is disclosed, that comprises a wiring substrate 11 having a first surface and a second surface, a flat type external connection terminal 12a disposed on the first surface of the wiring substrate 11, a semiconductor device 14 disposed on the second surface of the wiring substrate 11 and having a connection terminal 14a connected to the flat type external connection terminal 12a, a molding resin 15 for coating the semiconductor device 14 on the second surface of the wiring substrate 11, a card type supporting frame 10a having a concave portion or a hole portion fitting the wiring substrate 11, the semiconductor device 14, and the molding resin 15 in such a manner that the flat type external connection terminal 12a is exposed to the first surface of the wiring substrate 11, and adhesive resin a adhering integrally the flat type external connection terminal 12a, the wiring substrate 11, the semiconductor device 14, the molding resin 15, and the card type supporting frame 10a.

Abstract: A device is provided for accessing circuit units via access registers. The circuit units have a plurality of inputs for access to said circuit units. A first access register having register outputs which are connected to a first part of the inputs of at least one first circuit unit, and having register outputs which are connected to inputs of at least one second circuit unit is provided. In addition, a second access register having register outputs which are connected to a second part of the inputs of said at least one first circuit unit, and having register outputs connected to inputs of at least one third circuit unit is provided.

Abstract: A memory module is capable of constituting short loop-through form memory bus systems in which the length of the entire channel can be reduced. As a result, the systems are suitable for a high-speed operation, and costs for fabricating systems such as a board and a module connector can be reduced. The memory module includes a plurality of tabs located in one side of the front and in one side on the rear of the memory module, for being interconnected by a connector on a system board, a plurality of vias for connecting two different signal layers of the memory module, and a plurality of data buses extended from the tabs on the front of the memory module to the tabs on the rear of the memory module through each of the vias. At least one memory device is connected to each of the data buses. Preferably, each of the data buses is formed to be perpendicular to one side of the memory module on which the tabs are formed.

Abstract: A CPU locks a memory card attached to a card mount with a password by a lock/unlock processing according to an access limit application program, and unlocks the lock based on a predetermined condition. The function to control the secrecy of data recorded on the card is thus improved.

Abstract: The control logic for a hot-pluggable memory cartridge for use in a redundant memory system. To implement a hot-pluggable memory cartridge in a redundant memory system, control logic to control the sequence of events for powering-up and powering-down a memory cartridge is provided.

Abstract: An embedded memory on an integrated circuit chip is capable of being isolated from other on chip and off chip circuitry during power failure modes on the integrated circuit chip. The embedded memory preferably has its own external power supply. When power on chip fails or falls below a threshold level, input to and output from the embedded memory is prohibited by CMOS isolation cells. The CMOS isolation cells are controlled by enable signals and the power level of other power supplies within the integrated circuit.

Abstract: A bus system for carrying out data transfer between one bus master and a plurality of bus slaves. The bus system includes plural directional couplers which are formed by arranging respective parts of lines drawn from the bus slaves, without being in contact with, in the neighborhood of, and in parallel with a line drawn from the bus master. The line drawn from the bus master to a terminating resistance is wired to be folded. The directional couplers are further formed by arranging parts of the lines drawn from the bus slaves alternatively with respect to a first line part of the line drawn from the bus master ranging from the bus master to a fold of the line drawn from the bus master and with respect to a second line part of the line drawn from the bus master ranging from the fold to the terminating resistance.

Abstract: The invention relates to a semiconductor memory module having a plurality of memory chips and at least one buffer chip, which drives clock signals and command and address signals to the memory chips and also drives data signals to, and receives them from, the memory chips via a module-internal clock, address, command and data signal bus. The buffer chip forms an interface to an external memory main bus and the memory chips are arranged in at least one row.

Abstract: A very small computer memory card is densely packed with a large number of flash EEPROM integrated circuit chips. A computer memory system provides for the ability to removably connect one or more of such cards with a common controller circuit that interfaces between the memory cards and a standard computer system bus. Alternately, each card can be provided with the necessary controller circuitry and thus is connectable directly to the computer system bus. An electronic system is described for a memory system and its controller within a single memory card. In a preferred physical arrangement, the cards utilize a main circuit board with a plurality of sub-boards attached thereto on both sides, each sub-board carrying several integrated circuit chips.

Abstract: The present invention creates a memory chip, a memory component and a corresponding memory module. The memory chip is equipped with a multiplicity of memory cells and has an an [sic] array (20) of fuses and anti-fuses respectively, which can be written to and read individually in order to store specification information.

Abstract: A semiconductor device having at least three independently accessible memories, with at least one of the memories having a different memory capacity than the others. Separate selection signals are provided to the memories so that they can be independently activated. This allows the memories to be separately tested. When testing the semiconductor device, the memories are tested serially, except for the memory with the largest capacity, since this memory also has the longest test time. The memory with the longest test time is tested in parallel with the serially tested memories. This reduces the current that must be supplied by a test device to the semiconductor device during testing.

Abstract: A memory module includes at least one CAR and a plurality of DRAMs provided so as to be close and adjacent to one another on one face and the other face of a module substrate. The DRAMs are divided into a plurality of memory groups. Memory groups adjacent to each other of these memory groups are paired with each other. One of this pair is a 1-ranked memory group and the other is a 2-ranked memory group. This pair of the memory groups is connected to the CAR via short wiring with a T-branch structure having a short stub. One of the pair of the memory groups on the signal-reception side functions as an open end. Active termination is performed by a termination resistor of the other of the pair of the memory groups on the signal-non-reception side. Subsequently, signal reflections can be reduced.

Abstract: A local word-line redundancy architecture and method that implements both word-line and match-line steering for semiconductor memories and more particularly for content-addressable memories (CAM) are introduced. According to the present invention, the method of performing local word-line redundancy comprising: testing by using BIST, storing results, comparing failing read address data and failing match-line address data to determine if redundancy is possible and, if so, storing the redundancy repair data pattern and loading that patten upon initialization so that redundancy steering is activated.

Abstract: A programmable logic device, a memory device and a microcontroller manufactured on a single integrated circuit chip. In one example, the programmable logic device may comprise one or more macrocells each comprising an input/output macrocell or a buried macrocell. In another example, the programmable logic device may be a complex programmable logic device (CPLD) or a programmable logic array (PLA).

Abstract: A multiple chip memory system capable of providing state information relating to each chip embedded therein. The multiple chip memory system includes a first chip enabled by a first chip selection signal, and informing of a self state by a first ready/busy signal; and a second chip enabled by a second chip selection signal, and informing of a self state by a second ready/busy signal.

Abstract: An apparatus and method for exclusively binding data to a data processing system. The logical binding apparatus of the present invention includes a detachable circuit device mounted within a system planar. Data to be bound within the system planar is stored in a memory device within the detachable circuit device. A battery signal is applied from the system planar to a binding pin on the detachable circuit device, wherein the binding pin is applied to the input of a binding latch. The binding latch remains in a reset state while the battery signal is applied. Upon removal of said binding signal from the binding pin, the binding latch is set thus signaling a processing unit within the detachable circuit device to remove the data from the memory device.

Abstract: A memory module of the unbuffered type with ECC function is employed. Configuration of an internal C/A bus is set to a single T-branch topology. An output impedance of a chipset is maintained substantially constant. A capacitor for cutting high-frequency components of a C/A signal is added on a C/A bus.

Abstract: A method and apparatus for making a multiply folded BGA package design with shortened communication paths and more electrical routing flexibility. A package apparatus includes a substrate and a first integrated circuit (IC), wherein the first IC is electrically connected to the first face of the substrate, and wherein a first segment and a second segment of the substrate are both folded around the first IC. A second IC is electrically connected to the second face of the substrate, such that the second IC is connected to the first and second folded segments of the substrate abode the first IC.

Abstract: The present invention provides a read-only memory array having a flat-type structure. The read-only memory array comprises at least two memory banks having a plurality of memory cells. At least two inter-bank transistors are coupled to the two memory banks and shared by the two memory banks. Each inter-bank transistor is used for enabling to select the memory cells of the two memory banks. At least a contact commonly is coupled to the two memory banks through the two inter-bank transistors.

Abstract: In one embodiment, a modular memory device is presented comprising a substrate, a memory array fabricated above the substrate, and first and second circuitry fabricated on the substrate and under the memory array. The first and second circuitry allow the modular memory device to interface with first and second varieties of host devices, respectively. In another embodiment, a modular memory device is presented comprising a substrate, a memory array fabricated above the substrate, memory array support circuitry fabricated on the substrate, and logic circuitry fabricated on the substrate and under the memory array.

Abstract: A memory module for an electronic device provides means for reducing the amount of power necessary to access a desired number of data bits. This provides a design of memory modules which requires fewer DRAMs to be turned on during a read or write cycle than present module designs, thereby using much less power.

Abstract: The present disclosure relates to a write-once storage device. In one arrangement, the storage device comprises write-once memory adapted to store data files, re-writable memory that contains a file access table, and a device controller that is configured to control operation of the storage device. In use, the storage device can be used to receive data to be stored from a host device, store the data within write-once memory of the storage device, and update a file access table stored in re-writable memory of the storage device so as to emulate a re-writable storage card.

Abstract: A removable memory card and an associated read/write device and its method of operation are disclosed. The memory card may be formed of a sheet of chalcogenide glass material which has memory storage locations therein defined by the locations of conductive read/write elements of the read/write device.

Abstract: An electronic package is provided, having a flexible substrate, a first plurality of conductors, and a second plurality of conductors. The flexible substrate has first and second portions with a fold portion between the first and second portions, and is folded at the fold portion to position the second portion over the first portion. Each one of the first plurality of conductors runs from the first portion over the fold portion onto the second portion. Each one of the second plurality of conductors runs from the first portion onto the second portion without running over the fold portion.

Abstract: In a method of storing a quantity of data in a target memory location, the data quantity is stored first in a non-volatile buffer memory location. It is then examined whether the data are successfully stored in the non-volatile buffer memory location. If the step of examining produces a positive result, the target memory location to which the predetermined quantity of data is to be written is cleared. After the step of clearing of the target memory location, the data are transferred from the non-volatile buffer memory location to the target memory location. To conclude the storage cycle, the non-volatile buffer memory location is then cleared so as to be available for a new storage operation. The effect achieved thereby is a secure and uncomplicated transfer of information from a source memory to the target memory.

Abstract: According to one embodiment of the present invention, a circuit is disclosed. The circuit includes: a plurality of memory modules; a memory controller coupled to the plurality of memory modules; a plurality of bus splitters coupled between the plurality of memory modules and the memory controller to split signals communicated between the plurality of memory modules and the memory controller; and a plurality of terminators to reduce signal reflections corresponding to the split signals.