Abstract: Subject matter disclosed herein relates to memory devices comprising a memory array, a first port to interface with a memory controller directly or indirectly via another memory device, a second port to interface with yet another memory device, and a switch to selectively electrically connect the memory controller to a circuit path leading to the second port or to the memory array, wherein the switch may be responsive to a signal generated by the memory controller.

Abstract: A modular mass storage system and method that enables cableless mounting of ATA and/or similar high speed interface-based mass storage devices in a computer system. The system includes a printed circuit board, a system expansion slot interface on the printed circuit board and comprising power and data pins, a host bus controller on the printed circuit board and electrically connected to the system expansion slot interface, docking connectors connected with the host bus controller to receive power and exchange data therewith and adapted to electrically couple with industry-standard non-volatile memory devices without cabling therebetween, and features on the printed circuit board for securing the memory devices thereto once coupled to the docking connectors.

Abstract: In an embodiment, a processor includes a cache data array including a plurality of physical ways, each physical way to store a baseline way and a victim way; a cache tag array including a plurality of tag groups, each tag group associated with a particular physical way and including a first tag associated with the baseline way stored in the particular physical way, and a second tag associated with the victim way stored in the particular physical way; and cache control logic to: select a first baseline way based on a replacement policy, select a first victim way based on an available capacity of a first physical way including the first victim way, and move a first data element from the first baseline way to the first victim way. Other embodiments are described and claimed.

Abstract: Apparatus, systems, and methods to broadcast a memory command are described. In one embodiment, a memory controller comprising logic to insert a first predetermined value into an all ranks parameter in a memory command, and transmit the memory command to a memory device. Other embodiments are also disclosed and claimed.

Abstract: A transparent four rank memory module has a front side and a back side. The front side has a third memory rank stacked on a first memory rank. The back side has a fourth memory rank stacked on a second memory rank. An emulator coupled to the memory module activates and controls one individual memory rank from either the first memory rank, the second memory rank, the third memory rank, or the fourth memory rank based on the signals received from a memory controller.

Abstract: Aspects of the disclosure provide for increasing the capacity of ternary content addressable memories (TCAMs). For example, one aspect provides a method for adding rules to a TCAM, wherein the TCAM comprises multiple configurable banks. According to this method, a range of candidate banks in which the proposed rule may be stored is identified based on a priority of the proposed rule, and one of the candidate banks is selected for storing the proposed rule based on a width of the proposed rule and widths of the candidate banks. Another aspect provides a method for deleting one or more rules from a TCAM comprising multiple configurable banks. According to this method, once the rule is deleted, the bank from which it was deleted may be reduced in width, and therefore increased in capacity. For example, wider rules stored in this bank may be relocated to other banks using the method for adding rules to a TCAM.

Abstract: Memory controller concepts are disclosed in which hardware resources of a memory controller can be re-used or re-configured to accommodate various different memory configurations. The memory configuration may be stored in mode register bits (228), settable by a host or operating system. By re-configuring or reallocating certain resources of a memory controller, for example command logic blocks (A, B, C, D in FIG. 1A), a single controller design can be used to interface efficiently with a variety of different memory components. Command logic blocks that support N×M memory ranks, for example, can be reconfigured to support N ranks and M threads for multi-threaded memories (FIG. 1A). Data buffer (232, 254) depth can be extended by reconfiguring the buffers responsive to the mode register bits (228). Request buffers can be shared across command logic blocks, for example to increase the request buffer depth (FIG. 3A). Unused circuits can be powered down to save power consumption (FIG. 4A).

Abstract: Techniques for processing signal information from a high speed communication bus. The techniques includes determining spatial regions on an eye characterized by a start point, an end point, a middle point, a left point, and a right point. The start point is a beginning of an eye opening at a reference voltage. The end point is at an ending of eye opening at the reference voltage. The middle point is at a center point of eye opening at the reference voltage. The left point is a left sampling location characterized by a minimum setup time requirement, and the right point is a right sampling location characterized by a minimum hold time requirement. Determining the points is based on shifting a DQS position and a DQ position and running a plurality of memory built-in self test (BIST) engines and a plurality of results of BIST tests.

Abstract: Various embodiments for storing a logical object are provided. In one such embodiment, by way of example only, incoming data is divided corresponding to a logical data object into a plurality of independent streams, associating each data chunk of a plurality of obtained data chunks with a corresponding stream among the plurality of independent streams. At least one of the obtained data chunks and derivatives thereof is sequentially accommodated in accordance with an order the obtained chunks are received, while keeping the association with the corresponding streams. A global index is generated as a single meta-data stream accommodated in the logical data object and comprising information common to the plurality of independent streams and related to mapping between data in the logical data object and the obtained data chunks.

Abstract: Apparatuses, systems, and methods are disclosed for managing lifetime for a data storage device. A target module determines a write bandwidth target for a data storage device. An audit module monitors write bandwidth of the data storage device relative to the write bandwidth target. A throttle module adjusts execution of one or more write operations on the data storage device in response to the write bandwidth of the data storage device failing to satisfy the write bandwidth target.

Abstract: A memory module, comprising: a first pin, arranged to receive a first signal; a second pin, arranged to receive second signal; a first conducting path, having a first end coupled to the first pin; at least one memory chip, coupled to the first conducting path for receiving the first signal; a predetermined resistor, having a first terminal coupled to a second end of the first conducting path; and a second conducting path, having a first end coupled to second pin for conducting the second to a second terminal of the predetermined resistor; wherein the first signal and the second are synchronous and configured to be a differential signal, for enabling a selected memory chip from the at least one memory chip to be accessed.

Abstract: An adaptive memory system is provided for improving the performance of an external computing device. The adaptive memory system includes a single controller, a first memory type (e.g., Static Random Access Memory or SRAM), a second memory type (e.g., Dynamic Random Access Memory or DRAM), a third memory type (e.g., Flash), an internal bus system, and an external bus interface. The single controller is configured to: (i) communicate with all three memory types using the internal bus system; (ii) communicate with the external computing device using the external bus interface; and (iii) allocate cache-data storage assignment to a storage space within the first memory type, and after the storage space within the first memory type is determined to be full, allocate cache-data storage assignment to a storage space within the second memory type.

Abstract: A memory device includes an on-board processing system that facilitates the ability of the memory device to interface with a plurality of processors operating in a parallel processing manner. The processing system includes circuitry that performs processing functions on data stored in the memory device in an indivisible manner. More particularly, the system reads data from a bank of memory cells or cache memory, performs a logic function on the data to produce results data, and writes the results data back to the bank or the cache memory. The logic function may be a Boolean logic function or some other logic function.

Abstract: Methods and apparatus to improve throughput and efficiency in memory devices are described. In one embodiment, a memory controller may include scheduler logic to issue read or write requests to a memory device in an optimal fashion, e.g., to maximize bandwidth and/or reduce latency. Other embodiments are also disclosed and claimed.

Abstract: Apparatus, systems, and methods for configuring a plurality of stacked semiconductor dice with unique identifiers and identifying a die in the stack using the unique identifier are provided. Additional apparatus and methods are disclosed.

Abstract: Systems and methods for using memory commands are described. The systems include a memory controller. The memory controller receives a plurality of user transactions. The memory controller converts each user transaction into one or more row and column memory commands. The memory controller reorders the memory commands associated with the plurality of user transactions before sending the memory commands to a memory device.

Abstract: One embodiment of the present invention sets forth a hybrid memory module that combines memory devices of different types while presenting a single technology interface. The hybrid memory module includes a number of super-stacks and a first interface configured to transmit data between the super-stacks and a memory controller. Each super-stack includes a number of sub-stacks, a super-controller configured to control the sub-stacks, and a second interface configured to transmit data between the sub-stacks and the first interface. Combining memory devices of different types allows utilizing the favorable properties of each type of the memory devices, while hiding their unfavorable properties from the memory controller.

Abstract: A bad page management system is provided to guarantee a yield of a volatile semiconductor memory device such as a DRAM. A bad page list exists in a DRAM. A page remapper in a memory controller performs a page remapping operation in parallel with a normal operation of a scheduling unit to perform a latency overhead hidden function. A chip size of the DRAM is reduced or minimized. A DRAM controller performs a latency overhead hidden function to control a DRAM.

Abstract: Described herein are methods, systems and machine-readable media for migrating data between storage devices of a storage array. A metric is used to measure the optimality of candidate data migrations, the metric taking into account capacity balance and proper data striping. Candidate migrations are evaluated against the metric. The candidate migration that ranks as the best migration according to the metric may be carried out. This process of evaluating candidate migrations and carrying out the best candidate migration may be iterated until data is properly distributed among the storage devices of the storage array.

Abstract: Techniques and mechanisms for exchanging information from a memory controller to a memory device via a command/address bus. In an embodiment, the memory device samples a first portion of a command during a first sample period and samples a second portion of the command during a second sample period, the first portion and second portion exchanged via the command/address bus. The first sample period and the second sample period are concurrent with, respectively, a first transition of a clock signal and a second transition of the clock signal. In another embodiment, a mode of the memory device determines a relationship between the first transition and the second transition.

Abstract: Systems and methods to simplify population of modular components in an information handling system are disclosed. A method of populating modular components in an information handling system comprises a first step of initializing a populating sequence. A first socket corresponding to a first modular component is then identified. The first socket is flagged if it does not contain the first modular component. The first modular component is then installed in the first socket which is flagged.

Abstract: Embodiments of the invention relate to a method and apparatus for a zero voltage processor sleep state. A processor may include a dedicated cache memory. A voltage regulator may be coupled to the processor to provide an operating voltage to the processor. During a transition to a zero voltage power management state for the processor, the operational voltage applied to the processor by the voltage regulator may be reduced to approximately zero and the state variables associated with the processor may be saved to the dedicated cache memory.

Abstract: Logically arranged hierarchy or tiered storage may comprise a layer of storage being a faster access storage (e.g. solid state drive (SSD)) and another (e.g., next) layer being a traditional disk (e.g. HDD). In one embodiment, compaction occurs within the higher layer, e.g., until there is no more room and then during the compaction sequence the data may be moved down to the lower layer. In another embodiment, compaction and migration to a lower layer may occur within the higher layer, e.g., based on one or more policies, even if the higher layer is not full. In one embodiment, the data between layers are maintained as disjoint. In one embodiment, the more recent versions are always in the higher layer and the older versions are always in the lower layer.

Abstract: There is provided with an information processing apparatus comprising a DRAM, a memory controller configured to access the DRAM, and a bus master configured to send, to the memory controller, an access request to the DRAM, the bus master comprises a transmission unit configured to transmit, to the memory controller, using a signal indicating a type of burst access which is requested of the memory controller by the bus master, an instruction to designate that an auto-precharge operation is not to be performed after accessing the first address, and an instruction to designate that an auto-precharge operation is to be performed after accessing the first address.

Abstract: A semiconductor memory device including a plurality of memory die and a controller die. The controller die is connected to an internal control bus. The controller die is configured to provide to a selected one of the memory die an internal read command responsive to an external read command. The selected memory die is configured to provide read data to the controller in response to the internal read command; wherein latency between receipt by the controller die of the external read command and receipt of the read data from the selected memory die differs for at least two of the memory die when selected as the selected memory die.

Abstract: Computer-implemented methods for temporarily storing history of a web browsing session are provided. In one aspect, the method includes receiving a request to temporarily store session information for a web browsing session comprising at least one request to view a web page. The method also includes compressing data for the session information associated with the web browsing session, and storing the compressed data for the session information associated with the web browsing session only in a volatile memory. The compressed data for the session information stored in the volatile memory is lost when power to the volatile memory is off. A reference to the compressed data for the session information in the volatile memory is removed when the web browsing session is terminated.

Abstract: A close proximity memory arrangement maintains a point to point association between DQs, or data lines, to DRAM modules employs a clockless state machine on a DRAM side of the memory controller-DRAM interface such that a single FIFO on the memory controller side synchronizes or orders the DRAM fetch results. Addition of a row address (ROW-ADD) and column address (COL-ADD) strobe reducing latency and power demands. Close proximity point to point DRAM interfaces render the DRAM side FIFO redundant in interfaces such as direct stacked 3D DRAMs on top of the logic die hosting the memory controller. The close proximity point to point arrangement eliminates the DRAM internal FIFO and latency scheme, resulting in just the memory controller internal clock domain crossing FIFOs.

Abstract: Systems and methods are provided for managing performance of a computing device having dissimilar memory types. An exemplary embodiment comprises a method for interleaving dissimilar memory devices. The method involves determining an interleave bandwidth ratio comprising a ratio of bandwidths for two or more dissimilar memory devices. The dissimilar memory devices are interleaved according to the interleave bandwidth ratio. Memory address requests are distributed from one or more processing units to the dissimilar memory devices according to the interleave bandwidth ratio.

Abstract: A memory command scheduler is provided. The memory command scheduler includes a scheduler queue receiving first and second requests for a memory access from external devices and storing the first and second requests therein; and a controller generating a command of the second request after a preset number of clock cycles from a current clock cycle and transferring the generated command to a memory, if generation of a command of the first request is possible in the current clock cycle and generation of the command of the second request is possible after the preset number of clock cycles from the current clock cycle.

Abstract: A memory interface which is capable of performing calibration of a physical interface by realizing handshake of Update Interface signals. The physical interface connects memory and a memory controller which controls the memory to each other and converts data between the memory and the memory controller. A data conversion unit is disposed between the memory controller and the physical interface, for adjusting output timing of signals output from the memory controller to the physical interface and adjusting output timing of signals output from the physical interface to the memory controller. An update process unit is disposed between the memory controller and the physical interface, for controlling executing timing of calibration for adjusting drive performance of the physical interface.

Abstract: A computer system includes a controller coupled to a plurality of memory modules each of which includes a memory hub and a plurality of memory devices. The memory hub includes a row cache memory that stores data as they are read from the memory devices. When the memory module is not being accessed by the controller, a sequencer in the memory module generates requests to read data from a row of memory cells. The data read responsive to the generated read requests are also stored in the row cache memory. As a result, read data in the row being accessed may be stored in the row cache memory even though the data was not previously read from the memory device responsive to a memory request from the controller.

Abstract: A communication apparatus comprises a general-purpose memory, and a high-speed memory that allows higher-speed access than the general-purpose memory. Protocol processing is executed to packetize transmission data using a general-purpose buffer allocated to the general-purpose memory and/or a high-speed buffer allocated to the high-speed memory as network buffers.

Abstract: An integrated circuit device includes a transmitter circuit operable to transmit a timing signal over a first wire to a DRAM. The DRAM receives a first signal having a balanced number of logical zero-to-one transitions and one-to-zero transitions and samples the first signal at a rising edge of the timing signal to produce a respective sampled value. The device further includes a receiver circuit to receive the respective sampled value from the DRAM over a plurality of wires separate from the first wire. In a first mode, the transmitter circuit repeatedly transmits incrementally offset versions of the timing signal to the DRAM until sampled values received from the DRAM change from a logical zero to a logical one or vice versa; and in a second mode, it transmits write data over the plurality of wires to the DRAM according to a write timing offset generated based on the sampled values.

Abstract: A system and method are provided for simulating an aspect of a memory circuit. Included is an interface circuit that is in communication with a plurality of memory circuits and a system. Such interface circuit is operable to interface the memory circuits and the system for simulating at least one memory circuit with at least one aspect that is different from at least one aspect of at least one of the plurality of memory circuits. In accordance with various embodiments, such aspect may include a signal, a capacity, a timing, and/or a logical interface.

Abstract: A signal control circuit includes: a delay acquisition circuit configured to obtain a first delay amount to be added to an input signal for aligning timing of rise of the input signal with timing of fall or rise of a reference signal and a second delay amount to be added to the input signal for aligning timing of fall of the input signal with timing of the fall or the rise of the reference signal; and a ratio calculation circuit configured to calculate a duty ratio of the input signal based on a difference between the first delay amount and the second delay amount.

Abstract: A secure demand paging system (1020) includes a processor (1030) operable for executing instructions, an internal memory (1034) for a first page in a first virtual machine context, an external memory (1024) for a second page in a second virtual machine context, and a security circuit (1038) coupled to the processor (1030) and to the internal memory (1034) for maintaining the first page secure in the internal memory (1034).

Abstract: Embodiments include a system, an apparatus, a device, and a method. The apparatus includes a processor, a dynamic memory, and a hardware-implemented memory control circuit. The hardware-implemented control circuit includes a control circuit for establishing an extended refresh period of the dynamic memory based at least in part on a monitored result that indicates an occurrence of a memory loss in the dynamic memory. The hardware-implemented control circuit also includes a control circuit for causing a refresh of the dynamic memory during each of at least two extended refresh periods.

Abstract: Exemplary embodiments include a memory module including a plurality of connectors, at least one memory, at least one transmitter and at least one receiver. The connectors are configured to fit with a form factor of a memory socket on a server board. The memory is coupled with the connectors. The transmitter(s) are coupled with the memory. The transmitter(s) are configured to send a first plurality of signals from the memory module such that the first plurality of signals bypass the connectors. The receiver(s) are coupled with the memory. The receiver(s) are configured to receive a second plurality of signals to the memory module such that the second plurality of signals bypass the plurality of connectors.

Abstract: A mobile device including: a storage device; a system-on-chip (SOC) including a central processing unit (CPU) and a memory interface configured to access the storage device in response to a request of the CPU; and a working memory including an input/output (I/O) scheduler and a device driver, the I/O scheduler configured to detect real time processing requests and store the real time processing requests in a sync queue, and detect non-real time processing requests and store the non-real time processing requests in an async queue, the device driver configured to adjust the performance of the mobile device based on the number of requests in the sync queue.

Abstract: An integrated circuit memory device is disclosed. The memory device includes a memory core having a timing input to receive a clock signal. An interface couples to the memory core. The interface includes a receiver to receive a serial stream of write data bits and a sampler clocked by a strobe signal to generate serialized write data. The interface also includes a deserializer and control logic. The deserializer includes an input to receive the serialized write data and an output to generate parallel data responsive to a control signal generated by the control logic. In a first mode of operation, the control logic generates the control signal with respect to the clock signal. In a second mode of operation, the control logic generates the control signal with respect to the strobe signal.

Abstract: A monolithic three dimensional (3D) memory cell array architecture with bitcell and logic partitioning is disclosed. A 3D integrated circuit (IC) (3DIC) is proposed which folds or otherwise stacks elements of the memory cells into different tiers within the 3DIC. Each tier of the 3DIC has memory cells as well as access logic including global block control logic therein. By positioning the access logic and global block control logic in each tier with the memory cells, the length of the bit and word lines for each memory call are shortened, allowing for reduced supply voltages as well as generally reducing the overall footprint of the memory device.

Abstract: A memory device that includes an input interface that receives instructions and input data on a first plurality of serial links. The memory device includes a memory block having a plurality of banks, wherein each of the banks has a plurality of memory cells, and wherein the memory block has multiple ports. An output interface provides data on a second plurality of serial links. A cache coupled to the IO interface and to the plurality of banks, stores write data designated for a given memory cell location when the given memory cell location is currently being accessed, thereby avoiding a collision. Memory device includes one or more memory access controllers (MACs) coupled to the memory block and one or more arithmetic logic units (ALUs) coupled to the MACs.

Abstract: A memory device includes a memory array with random defective memory cells. The memory array is organized into rows and columns with a row and column identifying a memory location of a memory cell of the memory array. The memory device includes a row address device and a column address device and is operative to use a grouping of either the row or the column addresses to manage the random defective memory cells by mapping the memory location of a defective memory cell to an alternate memory location.

Abstract: A data processing device is provided that includes an array of working memory banks and an associated processing engine. The working memory bank array is configured with at least one independently activatable memory bank. A dirty data counter (DDC) is associated with the independently activatable memory bank and is configured to reflect a count of dirty data migrated from the independently activatable memory bank upon selective deactivation of the independently activatable memory bank. The DDC is configured to selectively decrement the count of dirty data upon the reactivation of the independently activatable memory bank in connection with a transient state. In the transient state, each dirty data access by the processing engine to the reactivated memory bank is also conducted with respect to another memory bank of the array. Upon a condition that dirty data is found in the other memory bank, the count of dirty data is decremented.

Abstract: System refresh in a cache memory that includes generating a refresh time period (RTIM) pulse at a centralized refresh controller of the cache memory and activating a refresh request at the centralized refresh controller based on generating the RTIM pulse. The refresh request is associated with a single cache memory bank of the cache memory. A refresh grant is received and transmitted to a bank controller. The bank controller is associated with and localized at the single cache memory bank of the cache memory.

Abstract: Hybrid multi-level memory architecture technologies are described. A System on Chip (SOC) includes multiple functional units and a multi-level memory controller (MLMC) coupled to the functional units. The MLMC is coupled to a hybrid multi-level memory architecture including a first-level dynamic random access memory (DRAM) (near memory) that is located on-package of the SOC and a second-level DRAM (far memory) that is located off-package of the SOC. The MLMC presents the first-level DRAM and the second-level DRAM as a contiguous addressable memory space and provides the first-level DRAM to software as additional memory capacity to a memory capacity of the second-level DRAM. The first-level DRAM does not store a copy of contents of the second-level DRAM.

Abstract: A memory device includes a first bank group, a second bank group, where the first and second bank groups are each configured to output multi-bit data in parallel in response to a read command, a data transferor configured to receive the multi-bit data outputted in parallel from the first bank group or the second bank group and output the multi-bit data at a time interval corresponding to an operation mode, first global data buses configured to transfer the multi-bit data outputted from the first bank group to the data transferor, second global data buses configured to transfer the multi-bit data outputted from the second bank group to the data transferor, and a parallel-to-serial converter configured to convert the multi-bit data outputted from the data transferor into serial data according to the operation mode.

Abstract: Various embodiments of the present invention are directed multi-core memory modules. In one embodiment, a memory module (500) includes memory chips, and a demultiplexer register (502) electronically connected to each of the memory chips and a memory controller. The memory controller groups one or more of the memory chips into at least one virtual memory device in accordance with changing performance and/or energy efficiency needs. The demultiplexer register (502) is configured to receive a command indentifying one of the virtual memory devices and send the command to the memory chips of the identified virtual memory device. In certain embodiments, the memory chips can be dynamic random access memory chips.

Abstract: An apparatus includes a printed circuit board with a plurality of printed circuit board traces, a memory controller mounted on the printed circuit board coupled to one or more of the plurality of printed circuit board traces, a plurality of non-volatile type of memory integrated circuits coupled to the printed circuit board, and a plurality of support integrated circuits coupled between the memory controller and the plurality of non-volatile type of memory integrated circuits.

Abstract: Dynamic/static random access memory (D/SRAM) cell, block shift static random access memory (BS-SRAM) and method using the same employ dynamic storage mode and dynamic storage mode switching to shift data. The D/SRAM cell includes a static random access memory (SRAM) cell having a pair of cross-coupled elements to store data, and a dynamic/static (D/S) mode selector to selectably switch the D/SRAM cell between the dynamic storage mode and a static storage mode. The BS-SRAM includes a plurality of D/SRAM cells arranged in an array and a controller to shift data from an adjacent D/SRAM cell in a second row of the array to a D/SRAM cell in a first row. The method includes switching the mode of, coupling data from an adjacent memory cell to, and storing the coupled data in, a selected D/SRAM cell.