Abstract: The preferred embodiment of the invention disclosed herein relates to an apparatus for testing semiconductor devices on a wafer containing a plurality of such devices. The apparatus includes a base having a support surface on which the semiconductor wafers can be located. The base further includes heater means for heating the surface and, thus, any wafers located thereon. Support stand means is associated with the base and extends above the support surface and a test probe unit connected in an electric test circuit is adjustably mounted on the support plate so that the probe unit is normal to and movable relative to the surface. Preferably, the test probe includes a tip that engages the wafer and this tip does not rotate when the position of the probe unit is adjusted.

Abstract: A sapphire chip is bonded to a metal substrate by means of an intermediate layer of 98% by weight of gold and 2% by weight of silicon. The intermediate layer directly contacts and is bonded to a bare, uncoated surface of the sapphire chip and a surface of the substrate.

Abstract: A liquid spray apparatus provides predetermined, uniform quantity of liquid (such as photoresist developer) per unit area of surface by a parabolic cam mechanism, arranged to repeatedly reciprocate a nozzle at a predetermined varying linear velocity a plurality of times over a spinning surface, such as a semiconductor device wafer. The mechanism moves the nozzle at a parabolic varying velocity whereby the liquid is deposited at a uniform quantity per unit area. The cam is continuously rotated and engaged with a spring-biased cam follower during the spraying period. The cam follower is engaged and disengaged with the cam by a programable timer defining the spraying period.

Abstract: The invention is an APD array having a plurality of p-n junctions. The p-n junctions comprise a plurality of separate regions which extend a distance into a semiconductor body from a surface thereof and have a conductivity type opposed to that of the body. A region of the same conductivity type as that of the body extends a further distance into the body and is composed of sub-regions which overlap one another in the direction parallel to the surface of the body. The elements so formed have a more uniform avalanche gain and, because of the overlap of the sub-regions of first conductivity type, the likelihood of electric breakdown at the surface is reduced and the electrical isolation between the elements is increased. Moreover, because of the proximity of the adjacent elements the likelihood of breakdown at the junction edges is reduced.

Abstract: A monolithic voltage controlled oscillator is fabricated on a single semiconductor body. The oscillator includes an FET and a varactor diode interconnected such that a voltage applied across the varactor modulates the oscillating frequency of the FET output.

Abstract: Methyl alkyl siloxane lubricants and dopants for capacitance electronic discs are applied to the discs from a butanol solution.

Abstract: An apparatus and method for determining the doping profile of an epitaxial layer of a semiconductor as a function of conductivity (or resistivity) vs. distance (depth) includes modifying a d.c. generated current by a focused laser beam modulated at high frequencies in the order of 20 MHz, and directed in sequence on a point-by-point basis to the layer surface. Photocurrent variations from point-to-point effected by the laser beam striking the layer at each of the sequence of points are detected to provide a signal related to conductivity, (or, if desired, resistivity) of the layer material.

Abstract: Capacitance electronic discs comprising conductive carbon-loaded PVC records are lubricated with a long chain polyalkylethylene lubricant containing 9-phenylstearyl alcohol as a dopant in an amount sufficient to reduce the moisture sensitivity of the discs.

Abstract: A vertical MOSFET includes source and gate electrodes on a major semiconductor surface, and a drain electrode on an opposing semiconductor surface. A shield electrode is disposed in proximity to the gate electrode so as to minimize feedback capacitance between the gate electrode and drain region. Additionally, the shield electrode increases the level of space charge limited current that can be supported in the drain region, and minimizes current crowding in the device.

Abstract: Method and apparatus are provided for determining the diffusion length of minority carriers in semiconductor material, particularly amorphous silicon which has a significantly small minority carrier diffusion length using the constant magnitude surface-photovoltage (SPV) method. Steady or modulated illumination at several wavelengths provides the light excitation on the surface of the material to generate the SPV. A manually controlled or automatic servo system maintains a constant predetermined value of the SPV for each wavelength. A drop of a transparent electrolyte solution containing redox couples (preferably quinhydrone) having an oxidation-reduction potential (E) in the order of +0.6 to -1.65 volts couples the SPV to a measurement system. The drop of redox couple solution functions to create a liquid Schottky barrier at the surface of the material. Illumination light is passed through a transparent rod supported over the surface and through the drop of transparent electrolyte.

Abstract: A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.

Abstract: Low value resistor inks comprising a conductive component consisting of stannous oxide and molybdenum trioxide or a mixture of molybdenum trioxide and metallic molybdenum; a glass powder selected from the group consisting of a barium aluminum borate glass and a barium calcium borosilicate glass; and a suitable organic vehicle are improved by the addition of a TCR modifier. Cadmium oxide is added to raise the TCR value of the subject resistor inks, and ferric oxide, vanadium oxide or mixtures thereof is added to lower the TCR value thereof.

Abstract: An automatic fluid dispensing apparatus for coating to a substantially uniform thickness a rotating surface, such as the surface of a semiconductor wafer, with a viscous liquid, such as a slurry of passivating glass. The wafer rotation rate is related to the radial movement of a dispensing arm to maintain a constant tangential velocity of the wafer at the radial location of the dispensing arm while a bead of the slurry is dispensed at a constant rate proportional to the tangential velocity to provide a spiral beaded coating of constant volume per square. By allowing the bead to heal during or following the dispense cycle, the viscous liquid spreads to a uniform thickness.

Abstract: An improved heating fixture, wherein the support means upon which a workpiece to be heated is mounted, is a vitreous carbon plate. The use of a vitreous carbon support plate significantly reduces the time required to heat and cool the support plate and a workpiece thereon.

Abstract: A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

Abstract: A video disc is molded in an apparatus which includes a pair of opposed mold members each having a mold cavity in its surface which faces the other mold member and a stamper is mounted across the mold cavity in each of the mold members. Each stamper has on its surface a surface relief pattern arranged along a spiral path. The stampers are arranged on the mold members so that any imperfections in the mold members which may pass through the stampers and be impressed on the disc being molded are aligned with areas of the stamper which do not contain information which impacts the picture quality so that such imperfections are impressed in areas of the disc which will not adversely impact the perceived picture quality during playback of the disc.

Abstract: A method is provided for fabricating a via connector from a first surface of a semiconductor wafer to an opposite second surface of the wafer. The first step consists of forming an adherent metal layer on the first surface on the semiconductor wafer. If the first surface of the semiconductor wafer has electronic components formed thereon, the metal layer is applied over the electronic components and preferably a protective layer of material is formed over the metal layer. Via holes are then laser drilled at predetermined locations through the metal layer and then through the semiconductor wafer. Thereafter a photoresist layer is applied over the first surface and exposed and developed to provide passage holes in the photoresist which are in alignment with the laser drilled apertures. The metal layer is then connected in the cathode position of the electroforming apparatus and via connectors are thereafter electroformed in the via holes.

Abstract: An improved cathode head is provided for use in the matrixing of masters, molds and stampers for use in the manufacture of molded records and discs. The cathode head of this invention has a disc shaped member on which a matrix to be replicated is to be mounted and an outer threaded ring which is screwed on the outer edge of the disc member to secure the outer edge of a matrix to be replicated to the surface of the disc shaped member. It has been found in accordance with this invention that the seal formed at the outer edge between the ring member, the matrix replicated and the disc shaped member can be substantially improved as compared to that of a prior art cathode head by using a seal having a right triangular shaped lead section which, in addition to providing a substantially improved electrolyte seal disc, allows the replica to be formed having a perpendicular outer edge.

Abstract: A novel process for fabricating low resistance contacts for high density integrated circuits is described wherein during the initial processing of the device, after a scaled MOSFET is formed, contact openings, having vertical walls with respect to the underlying substrate, are provided. An apertured masking layer, having apertures which provide an open are a somewhat larger than the original contact opening, is formed on the structure after which, the structure is subjected to a high energy deep implant step followed by a low energy, shallow, supplemental implant step. The high energy implant serves to provide the device with a deep junction at the contact area to minimize spiking and, by reason of the shallow implant, good ohmic contact may be made. Since the oxide surrounding the contact opening is also implanted, there is provided means for tapering the edges of the contact opening.

Abstract: 9-Phenylstearyl alcohol, when added to a fractionated methyl alkyl siloxane lubricant for capacitive electronic discs, improves the playback performance and surface quality of the disc.