Patents Represented by Attorney Birgit E. Morris

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  • Video disc molding composition
    Patent number: 4512916
    Abstract: A conductive molding composition for the compression molding of high density information discs (video discs). The composition includes a polyvinylchloride-based resin containing sufficient carbon black particles to obtain a desired conductivity (bulk resistivity of about 500 ohm-cm at 900 mHz or less,) from about 1 to 5 weight percent of a stabilizer, from about 0.5 to 3 weight percent of a lubricant, from about 1 to 5 weight percent of a plasticizer and from about 0.1 to 1 weight percent of an organo-silicone compound having polar groups.
    Type: Grant
    Filed: December 27, 1982
    Date of Patent: April 23, 1985
    Assignee: RCA Corporation
    Inventor: Pabitra Datta
  • Disc turnover device
    Patent number: 4512455
    Abstract: A disc turnover device is mounted along a conveyor which supports discs in a flat horizontal position and carries the discs along a horizontal path.The turnover device includes a pair of wheels mounted on opposite sides of the conveyor for rotation about a common axis perpendicular to the path of the conveyor. Each wheel has a plurality of circumferentially spaced pickup arms pivotally mounted at one end on the wheel for pivotation toward and away from the conveyor. Each arm on one wheel is in parallel opposed relation with an arm on the other wheel to provide a plurality of opposed arms. A spring urges each arm toward the conveyor and caming projections move the arm away from the conveyor at selected positions along its path of rotation. A pickup head is mounted on each arm and is slidable longitudinally along the arm. Each head has fingers for engaging and holding the edge of a disc.
    Type: Grant
    Filed: October 3, 1983
    Date of Patent: April 23, 1985
    Assignee: RCA Corporation
    Inventors: Joseph H. Thorn, John J. Prusak
  • Glow discharge apparatus for use in coating a disc-shaped substrate
    Patent number: 4512284
    Abstract: An improved apparatus for preparing a coating by subjecting gaseous reactant precursors to a glow discharge is disclosed. The improvement comprises an electrode which is larger in all dimensions than the substrate which is to be coated. Electrically insulated magnets are arranged such that the area of the magnets is proportionally distributed with respect to the area of the substrate to be coated, whereby enhanced uniformity of quality and thickness of the deposited coating are provided. Unexpectedly the coating deposition rate increases substantially without increasing the power required or precursor consumption, and further, the temperature does not markedly increase during deposition.
    Type: Grant
    Filed: December 19, 1983
    Date of Patent: April 23, 1985
    Assignee: RCA Corporation
    Inventors: John W. Robinson, Grzegorz Kaganowicz
  • Electrically alterable, nonvolatile floating gate memory device
    Patent number: 4513397
    Abstract: An electrically alterable, nonvolatile floating gate memory device is described wherein the floating gate is a second level polysilicon layer. The first level polysilicon layer is provided with an aperture in order for only a small portion of the second level polysilicon floating gate to extend through the aperture for coupling to the substrate. Chip area is conserved by coupling the floating gate to the substrate at the portion of the channel region that conduction takes place by means of the self aligned aperture.
    Type: Grant
    Filed: December 10, 1982
    Date of Patent: April 23, 1985
    Assignee: RCA Corporation
    Inventors: Alfred C. Ipri, Roger G. Stewart
  • Method of forming self-aligned contact openings
    Patent number: 4512073
    Abstract: A process for forming reliable contacts in a VLSI device wherein, after the source and drain regions have been formed, the contact openings are formed and the source and drain regions redoped. A heat treatment step anneals surface damage and causes lateral migration of the implanted ions to preclude the contact from forming a short circuit between the doped region and the substrate exposed as a result of any misalignment of the contact openings. As an added benefit, the process also prevents the contact from "spiking" through the doped region to the underlying substrate.
    Type: Grant
    Filed: February 23, 1984
    Date of Patent: April 23, 1985
    Assignee: RCA Corporation
    Inventor: Sheng T. Hsu
  • Optical reflectance method for determining the surface roughness of materials in semiconductor processing
    Patent number: 4511800
    Abstract: This disclosure describes an optical reflectance method for rapid and simultaneous determination of surface roughness and structure of silicon films deposited by chemical vapor deposition. The magnitude of the reflectance of polycrystalline silicon films at a wavelength of about 280 nm can be used directly as a quantitative measure of film surface roughness. The magnitude of the reflectance of as-deposited amorphous or mixed amorphous-polycrystalline silicon films at a wavelength of about 400 nm can be used as a measure of the combined surface roughness and amorphism of the films. Other materials such as metals, alloys and silicides used in semiconductor technology may be evaluated with respect to surface roughness in a similar manner.
    Type: Grant
    Filed: March 28, 1983
    Date of Patent: April 16, 1985
    Assignee: RCA Corporation
    Inventors: Gunther Harbeke, Michael T. Duffy
  • Apparatus and method for automatically controlling an extruder for thermoplastic material
    Patent number: 4510104
    Abstract: There is described herein a method of operating an extruder for thermoplastic material to automatically control the output of the extruder. The extruder includes a kneader screw, a hopper having a feed screw for feeding the thermoplastic material in dry particulate form to the kneader screw and an outlet feed screw for removing the plastic material in molten form from the kneader screw. Each of the screws is operated by a separate electric motor. The method includes monitoring the current of the motor for the kneader screw. Variations in the current indicate variations in the opertion of the kneader screw. Upon any variation in the current of the kneader screw motor, the speed of the hopper feed screw and/or the outlet feed screw is varied to compensate for the variation in the operation of the kneader feed screw and return the current to its original value.
    Type: Grant
    Filed: October 7, 1983
    Date of Patent: April 9, 1985
    Assignee: RCA Corporation
    Inventors: Charles A. Weaver, Joseph W. Stephens
  • Surface preparation for determining diffusion length by the surface photovoltage method
    Patent number: 4507334
    Abstract: A method of treating the surface of a sample of n-type silicon material in preparation for measurements for determining the minority carrier diffusion length of the material by the surface photovoltage method comprises applying a strong oxidizing agent to an appropriately prepared surface of a semiconductor material such as silicon. The oxidizing agent is taken from the group consisting of potassium permanganate [KMnO.sub.4 ], potassium dichromate [K.sub.2 Cr.sub.2 O.sub.7 ], and ammonium dichromate [(NH.sub.4).sub.2 Cr.sub.2 O.sub.7 ]. The surface preparation assures a consistently large surface photovoltage that is stable during the surface photovoltage measurement for minority carrier diffusion length.
    Type: Grant
    Filed: October 31, 1983
    Date of Patent: March 26, 1985
    Assignee: RCA Corporation
    Inventor: Alvin M. Goodman
  • Diamond-like film and process for producing same
    Patent number: 4504519
    Abstract: An amorphous, carbonaceous, diamond-like film and a process for producing the same is disclosed. The film has an extremely low hydrogen content and an extremely low stress, is resistant to both acids and alkalis, and adheres tenaciously to many types of substrates including glasses, plastics, metals, and semiconductors. The process for producing this film is a hybrid process using radio frequency plasma decomposition of an alkane and a pair of spaced carbon electrodes.
    Type: Grant
    Filed: November 3, 1983
    Date of Patent: March 12, 1985
    Assignee: RCA Corporation
    Inventor: Joseph Zelez
  • Lubricant detector and measuring device
    Patent number: 4503806
    Abstract: A detector and measuring device for determining the presence and number of lubricant particles in a flow of air directed onto the surface of a disc to coat the disc with a thin layer of the lubricant. The detector includes means for removing a portion of the air containing the lubricant particles from the coating chamber, means for diluting the air containing the lubricant particles with additional clean air and means for passing diluted air through a particle counter which detects and counts the particles of lubricant.
    Type: Grant
    Filed: February 3, 1984
    Date of Patent: March 12, 1985
    Assignee: RCA Corporation
    Inventors: John J. Prusak, Brian E. Lock, Joseph H. Thorn
  • LPCVD Deposition of tantalum silicide
    Patent number: 4504521
    Abstract: An improved method of forming a polycide structure is disclosed. An in-situ doped silicon layer is deposited in the amorphous state by LPCVD at 560.degree.-580.degree. C., a polycrystalline tantalum rich tantalum silicide layer is deposited thereover by LPCVD and the structure annealed to convert the silicon to the polycrystalline state and the tantalum silicide to TaSi.sub.2. The deposition and annealing procedures are carried out sequentially in a single reaction vessel.
    Type: Grant
    Filed: March 22, 1984
    Date of Patent: March 12, 1985
    Assignee: RCA Corporation
    Inventors: Alois E. Widmer, Roland Fehlmann
  • Mechanical scriber for semiconductor devices
    Patent number: 4502225
    Abstract: A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.
    Type: Grant
    Filed: May 6, 1983
    Date of Patent: March 5, 1985
    Assignee: RCA Corporation
    Inventor: Peter T. Lin
  • Method of forming semiconductor contacts by implanting ions of neutral species at the interfacial region
    Patent number: 4502206
    Abstract: The contact resistance between a layer of conductive material, such as a metal or conductive polycrystalline silicon, and either a body of single crystalline silicon or another layer of the conductive material is reduced by implanting ions of a neutral material through the conductive layer into either the silicon body or the other conductive layer. After the implantation of the neutral ions, the device is annealed.
    Type: Grant
    Filed: November 18, 1983
    Date of Patent: March 5, 1985
    Assignee: RCA Corporation
    Inventors: George L. Schnable, Chung P. Wu
  • Method for the manufacture of record stampers
    Patent number: 4500393
    Abstract: A method is provided for the manufacture of record stampers having electroformed inner and outer edges of a predetermined configuration. In the disclosed method, a flat matrix is formed from a ductile metal. The inner and outer sections of the matrix are shaped into a form which is the mirror image of inner and outer edges desired be formed on the stamper. A metal, preferably a relatively hard metal, is then electroformed on the surface of the matrix in a preselected thickness required for the stamper. The resulting stamper is then stripped from the surfaces of the matrix. The stamper which is obtained will have electroformed inner and outer edges of the predetermined configurations.
    Type: Grant
    Filed: April 30, 1984
    Date of Patent: February 19, 1985
    Assignee: RCA Corporation
    Inventor: Donald J. Wierschke
  • Distributor tube for CVD reactor
    Patent number: 4499853
    Abstract: An apparatus for chemically vapor-depositing silicon material on surfaces of a plurality of substrates arranged in a stack that is continuously rotating. A gas distributor formed of a pair of coaxially tubes, in fixed relation with the rotating substrates, provides a pair of gas streams from a pair of parallel slots extending lengthwise of the tube facing the substrates. Gas input through the inner tube is passed through holes conducting gas from the inner tube to the outer tube and into the chamber as two gas streams. Substantially uniform deposition is achieved within .+-.5% with gas high deposition rates effected by high flow gas streams that are not turbulent.
    Type: Grant
    Filed: December 9, 1983
    Date of Patent: February 19, 1985
    Assignee: RCA Corporation
    Inventor: Edward A. Miller
  • Method to determine the crystalline properties of an interface of two materials by an optical technique
    Patent number: 4498772
    Abstract: Crystalline quality of a semiconductor material at its interface with an insulator is optically evaluated by a reflected light beam scanned in wavelength. The refractive index of the material at or near the interface is determined by calculation from the measured values of reflectivity extrema and compared, if desired, to the bulk refractive index of the material. This index is an indicia of the crystalline quality at the interface.
    Type: Grant
    Filed: November 5, 1982
    Date of Patent: February 12, 1985
    Assignee: RCA Corporation
    Inventors: Lubomir L. Jastrzebski, Jacek Lagowski
  • Method for detecting distance deviations to a photoresist surface in an optical printer
    Patent number: 4498775
    Abstract: A device for monitoring gap deviations in an optical printer comprises a mask having a plurality of closely-spaced differently-sized apertures. Actinic light passing through the aperture to a photoresist surface develops a pattern of diffraction-induced images in the photoresist surface. Each image is uniquely shaped according to its associated aperture size, gap dimension, light wavelength and photoresist characteristics. An indexing parameter (.DELTA..nu.) is used to relate the pattern of images developed to gapping or focusing deviations in the system. Either proximity or projection printers can be used.
    Type: Grant
    Filed: February 17, 1982
    Date of Patent: February 12, 1985
    Assignee: RCA Corporation
    Inventor: Lawrence K. White
  • Silicon photodiode with n-type control layer
    Patent number: 4499483
    Abstract: A p-.nu.-n Si photodiode having an n-type control layer extended into the silicon body from a portion of the surface contiguous to that portion from which a p-type region extends. Photodiodes incorporating this control layer have a much higher junction resistance.The invention also includes an improved method of making a photodiode which has a reduced number of processing steps. The improvement comprises implanting As or Sb into the surface of a .nu.-type Si body to form an n-type layer prior to the steps of passivating the surface and forming a p-type region extending into the body from the surface.
    Type: Grant
    Filed: April 26, 1984
    Date of Patent: February 12, 1985
    Assignee: RCA, Inc.
    Inventors: Tsuneo Yamazaki, Mervat Faltas, Paul P. Webb
  • Process for forming an improved silicon-on-sapphire device
    Patent number: 4496418
    Abstract: A novel process is described for the removal of the objectionable point (tilt projection, appearing at the top of a silicon island). The process includes the formation of a thick insulating layer on the top surface of the island, etching the top and sides of the insulating layer to expose, at the least, the objectionable point and, thereafter, etching the objectionable point to produce a rounded edge.
    Type: Grant
    Filed: June 30, 1982
    Date of Patent: January 29, 1985
    Assignee: RCA Corporation
    Inventor: William E. Ham
  • Method of making semiconductor device with multi-levels of polycrystalline silicon conductors
    Patent number: 4494301
    Abstract: A method of making a semiconductor device having multi-levels of polycrystalline silicon conductors insulated from each other and from the silicon substrate on which the semiconductor device if formed. In this method, each of the silicon oxide layers insulating the conductors from each other and from the substrate surface are each individually formed by thermal oxidation so that each is tailored in thickness and electrical characteristics for the particular purpose that each serves.
    Type: Grant
    Filed: September 1, 1983
    Date of Patent: January 22, 1985
    Assignee: RCA Corporation
    Inventor: Lorenzo Faraone