Abstract: A redundancy repair circuit and method therefor for use with a semiconductor memory device are provided. The redundancy repair circuit comprises: a memory circuit having a plurality of address lines and a plurality of redundancy address lines in a memory cell; a repair redundancy control circuit for repairing a defective address line using a redundancy address line of the plurality of redundancy address lines, and for encoding and outputting fuse repair information corresponding to redundancy address information, wherein addresses corresponding to defective memory cells are pre-programmed; and a redundancy line driver for receiving the fuse repair information from the repair redundancy control circuit, for decoding the fuse repair information and for activating a redundancy line corresponding to the decoded fuse repair information, wherein the repair redundancy control circuit is separate from the redundancy line driver.

Abstract: A connecting device comprises a first power plug for connecting to a power output port of a vehicle, a second power plug for connecting to a power input port on an electronic device, at least one signal plug for connecting to at least one signal output port of the electronic device, wherein visual signals and audio signals are received by the connecting device through the at least one signal plug, and a wireless transmitter for wirelessly transmitting the visual signals and the audio signals to a receiver in the vehicle.

Abstract: Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.

Abstract: A global positioning system (GPS) receiver is provided, comprising a converter for converting received GPS signals to in-phase (I) and quadrature-phase (Q) digital signals; a correlator for generating expected codes and correlating the I and Q digital signals with the expected codes to output sampled I values and sampled Q values for a tap; a filter for filtering the sampled I values and sampled Q values to modified I values to each of the modified Q values, and for adding each of the modified I values to each of the corresponding modified Q values of the tap, and for outputting a count for sum which is positive; a counter for incrementing a counter value upon each count received from the filter; and a comparator for comparing the counter value to a threshold value upon completion of measure of values of the tap for determining the presence of a peak.

Abstract: A backlight assembly removing dark areas and a display device including the backlight assembly are provided. The backlight assembly includes a light source to emit light, and a light guiding plate which receives and guides the light emitted from the light source. A light diffusing area is formed in a light incident portion of the light guiding plate.

Abstract: The shift register, which is an n-th shift register of a shift register chain, includes a first multiplexer, a second multiplexer, and a latch block, wherein n is a positive integer. The first multiplexer selects one of output data of the (n?1)-th shift register or output data of the (n+1)-th shift register and outputs the selected data to be used as a reset signal in the latch block. The second multiplexer selects one of the output data of the (n?1)-th shift register or the output data of the (n+1)-th shift register and outputs the selected data to be used as input data of the latch block. The latch block stores the output data of the second multiplexer in response to the clock control signal, the inverted clock control signal and the reset voltage, and outputs the stored data.

Abstract: In a method and an apparatus for inspecting a wafer surface, a wafer is loaded into a chamber. An incident light including a first light for sensing a vertical position of the wafer and a second light for inspecting the wafer surface is irradiated onto the wafer. The first light is reflected on an inspection region or a next inspection region of the wafer and is detected to control a wafer position. The second light is scattered on the inspection region and is detected to inspect the wafer surface of the inspection region. Position information of a wafer is examined and a position of the wafer is adjusted before inspecting a surface of inspection region of a wafer so as to enable accurate inspection of the wafer surface.

Abstract: A writing driver circuit of a phase-change memory array which has a pulse selection circuit, a current control circuit, and a current drive circuit. The current control circuit receives a bias voltage, outputs a control signal at a second level during an enable duration of the reset pulse when the data is at a first level, and outputs a control signal at a first level during an enable duration of the set pulse when the data is at a second level. The current drive circuit outputs writing current to the phase-change memory array during the enable duration of the reset pulse or the set pulse. The writing driver circuit can select the reset pulse or the set pulse according to the logic level of the data, and control the level of current applied to the phase-change memory array according to the reset pulse or the set pulse.

Abstract: A capacitor bank includes a first node, a second node, first blocking capacitors, N first AMOS varactors, second blocking capacitors and N second AMOS varactors. The first blocking capacitors have first terminals connected to the first node and second terminals where a bias voltage is applied. The N first AMOS varactors have first terminals connected to the second terminals of the first block capacitors. The second blocking capacitors have first terminals connected to the second node and second terminals where the bias voltage is applied. The N second AMOS varactors have first terminals connected to the second terminals of the second blocking capacitors and second terminals connected to second terminals of the first AMOS varactors, respectively, wherein N binary coded signals are applied to the respective second terminals of the first AMOS varactors and the second AMOS varactors. Therefore, phase-noise degradation caused by the FM modulation may be avoided.

Abstract: An input impedance matching circuit for a low noise amplifier includes a source pad, a gate pad, an input transistor, a source degeneration inductor and a matching capacitor. The gate pad receives an input signal and the input transistor amplifies the input signal transmitted from the gate pad. The source degeneration inductor electrically coupled to an external ground voltage is adapted for input impedance matching of the low noise amplifier. The source pad is coupled to a source electrode of the input transistor and the matching capacitor is formed between the gate pad and the source pad extending the source pad to be disposed under the gate pad. Accordingly, impedance matching of the low noise amplifier may be facilitated and the gain and noise figure of the low noise amplifier may be improved.

Abstract: The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.

Abstract: A method and apparatus for a hybrid network device for performing in a virtual private network (VPN) and a wireless local area network (WLAN) are provided. The hybrid network device comprises a VPN module serving as a VPN hardware accelerator in a WLAN module, which performs in the WLAN, wherein the hybrid network device integrates WLAN and VPN capabilities into one device.

Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

Abstract: A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.

Abstract: A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor connected to the first and the second signal lines; a pixel electrode connected to the thin film transistor; a regular domain defining member partitioning the pixel electrode into a plurality of partitions; and a subsidiary domain defining member extending substantially parallel to the regular domain defining member and disposed near edge or middle of the partitions.

Abstract: A TFT array panel includes an insulating substrate, a gate line and a storage electrode line formed thereon. The gate line and the storage electrode line are covered with a gate insulating layer, and a semiconductor island is formed on the gate insulating layer. A pair of ohmic contacts are formed on the semiconductor island, and a data line and a drain electrode are formed thereon. The data line and the drain electrode are covered with a passivation layer having a contact hole exposing the drain electrode. A pixel electrode is formed on the passivation layer and connected to the drain electrode through the contact hole. The TFT array panel is covered with an alignment layer rubbed approximately in a direction from the upper left corner to the lower right corner of the TFT array panel or the pixel electrodes. The pixel electrode has approximately a rectangular shape and overlaps the gate line and the data line.

Abstract: A backlight assembly includes a light source unit a light guiding plate and an optical changing pattern. The tight source unit includes a light source, a first lens portion enclosing the light source and a second lens portion positioned on the first lens portion. The second lens portion has a concave shape at an upper face. The light guiding plate includes an upper face and a lower face. The light guiding plate has a groove formed on the lower face to enclose at least a portion of the light source unit. The light guiding plate guides the light generated from the light source unit. The optical path changing pattern is formed on the upper face of the light guiding plate, and faces the light source unit. As a result, an optical distribution of the backlight assembly may be uniformized, and a size of the backlight assembly may be reduced.

Abstract: A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

Abstract: A shift register in which multiple stages are connected one after another to each other, the multiple stages having a first stage in which a start signal is coupled to an input terminal, the shift register sequentially outputting output signals of respective stages. The multiple stages have odd stages for receiving a first clock signal, and even stages for receiving a second clock signal having a phase opposite to the first clock signal. Each of the multiple stages has a pull-up section for providing a corresponding one of the first and second clock signals to an output terminal. A pull-up driving section is connected to an input node of the pull-up section. A pull-down section provides a first power voltage to the output terminal. A pull-down driving section is connected to an input node of the pull-down section.

Abstract: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.