Abstract: A silicon-germanium bipolar transistor includes a silicon substrate in which a first n-doped emitter region, a second p-doped base region adjoining the latter and a third n-doped collector region adjoining the latter, are formed. A first space charge zone is formed between the emitter region and the base region and a second space charge zone is formed between the base region and the collector region. The base region and an edge zone of the adjoining emitter region are alloyed with germanium. The germanium concentration in the emitter region rises toward the base region. The germanium concentration in a junction region containing the first space charge zone rises less sharply than in the emitter region or decreases and, in the base region, it initially again rises more sharply than in the junction region.
Type:
Grant
Filed:
July 22, 2002
Date of Patent:
June 15, 2004
Assignee:
Infineon Technologies AG
Inventors:
Wolfgang Klein, Rudolf Lachner, Wolfgang Molzer
Abstract: An interface circuit transmits data via a serial interface to and from a processor. A first-in-first-out memory is disposed between the serial interface and the processor. A suitable method transmits data which are received and read into the memory serially bit by bit and are read out of it byte by byte by the processor, or, respectively, can be written byte by byte into the memory by the processor and can be transmitted from the memory bit by bit.
Abstract: A system for a machine, in particular an automated production machine, has a large number of proximity sensors. Each proximity sensor has at least one secondary winding that is suitable for drawing power from a medium-frequency magnetic field. At least one primary winding, which is fed from a medium-frequency oscillator, is provided for supplying the proximity sensors with electrical power without using wires. Each proximity sensor is equipped with a transmitting device that emits radio signals, which contain sensor information of interest, to a central receiving device that is connected to a process computer for the machine. A proximity sensor and a primary winding for this purpose are also proposed.
Type:
Grant
Filed:
December 11, 2001
Date of Patent:
June 15, 2004
Assignee:
ABB Research Ltd.
Inventors:
Guntram Scheible, Bernd Smailus, Martin Klaus, Kai Garrels, Lothar Heinemann
Abstract: An ESD protective configuration for signal inputs and outputs is described. The inventive configuration is provided with an overvoltage tolerance, especially in CMOS circuits. An NMOS transistor acting as the ESD protective element is situated between an I/O pad and a low supply voltage, is impinged upon with an increased voltage at a gate thereof and is provided with a high threshold voltage.
Abstract: A method of forming a bitline and a bitline contact and a dynamic random access memory (DRAM) cell array includes the following steps. The bitline and the bitline contact are formed in a two-step process, in which, first, the bitline contact is formed in a first dielectric layer and, then, the bitline of a conductive material having a lower resistivity than the bitline contact material is defined in a second dielectric layer (5). According to a preferred embodiment, the second dielectric layer (5) is made of a low k dielectric. The retention anneal process, which is usually performed in the standard DRAM process, is preferably made before depositing the bitline material and, optionally, the low k dielectric. A dynamic random access memory cell array having at least one bitline and a bitline contact can be manufactured by this method.
Abstract: Conventional circuit configurations for range changeover between different bands (UHF, VHF) in television receivers utilize MOS tetrodes whose operating point adjustment is unproblematic. The MOS tetrodes of the inventive circuit configuration comprise a constant potential at their source electrode regardless of the band that is selected. Besides the savings in terms of components, the invention simplifies the dimensioning of the circuit configuration. The invention can be used in all high-frequency receivers having a plurality of frequency ranges between which a changeover is performed.
Abstract: A porthole window includes a circular base section being a viewing glass having a substantially planar inner surface and a border region, and a rigid plastic side-wall section of the bowl tapering in a direction of the base section. The viewing glass, over an entire border region of the base section, is curved in a direction of the side-wall section such that the border region of the base section forms a rounded glass shoulder. On the outer border of the glass shoulder, the viewing glass has an annular connecting section running obliquely in relation to the inner surface of the base section and, at its head end, firmly engages with the inner end of the side-wall section.
Abstract: In order to be able to carry out the testing of integrated semiconductor memory devices particularly rapidly, it is proposed that the test result data of the respective memory area which are obtained in the area of the semiconductor memory device are formed, transmitted and/or stored externally in each case as a plurality of blockwise test result lists.
Abstract: A method for controlling elements for guiding sheet material and for controlling a surface for holding a sheet pile, which comprises registering, by a first sensor element, a lateral position of the sheet material and, based thereon, moving the surface for holding the sheet pile in a lateral direction, and controlling, via a sensor element for sensing a side edge of the sheet pile, independently of a first guide element, the lateral position of a further guide element, which is disposed on a side of the sheet pile, which is opposite to an aligning member for laterally aligning the sheet material and is assigned to an upper pile region; and a device for performing the method.
Abstract: The circuit contains a series regulator with an FET. A capacitor and a further FET, which is provided as a transfer gate and is driven by the POR signal, are connected in series between the source terminal, to which the external supply voltage is applied, and the gate connection. When the external voltage is applied, the FET opens, with the transfer gate switched on, corresponding to the charging of the capacitor which now takes place. Because this charging process takes a certain amount of time, overshoots in the internal voltage are prevented.
Abstract: A method for structuring a photoresist layer includes the steps of providing a substrate on which a photoresist layer has been applied at least in some areas. The photoresist layer includes a film-forming polymer that contains molecule groups that can be converted into alkali-soluble groups by acid-catalyzed elimination reactions. The polymer further includes a photoacid generator that, on exposure to light from a defined wavelength range, releases an acid. The polymer additionally has a thermobase generator that releases a base when the temperature is raised. The photoresist layer is initially exposed, in some areas, to light from the defined wavelength range. The photoresist layer is then heated to a temperature at which the elimination reaction catalyzed by the photolytically generated acid takes place and the thermobase generator releases a base. Finally, the photoresist layer is developed.
Type:
Grant
Filed:
April 29, 2002
Date of Patent:
June 8, 2004
Assignee:
Infineon Technologies AG
Inventors:
Ernst-Christian Richter, Michael Sebald
Abstract: The light source has an LED, preferably produced for the surface-mounting technique, embedded in a transparent material filling. A converter substance is integrated in the filling for the at least partial wavelength conversion of the light emitted by the LED. A lens is glued onto the transparent material filling. The material filling has a convex surface and the lens has a concave underside entering into a form fit with the convex surface of the material filling.
Abstract: A comparator includes an adjustable offset and particularly dimensioned and configured components. The particular configuration and dimensioning of the comparator ensure that the offset voltage can be set precisely and permanently to a value, which can vary within a large range. The setting of an offset voltage does not lead to the degradation of other properties of the comparator, in particular to a slower reaction to changes in the input voltages.
Abstract: A metrology device is described which is couplable to a load port of a semiconductor product handling and/or processing tool. The tool encloses a mini-environmental atmosphere and has a load port table for supporting devices to be coupled to the load port. The metrology device contains a housing preserving an inner atmosphere, a coupling region for connecting the inner atmosphere to the mini-environmental atmosphere and a measuring device for measuring a property of a semiconductor product. The metrology device further has a support which is movable by a transport device and which is dimensioned such that the metrology device is self-supporting in a position appropriate for coupling the coupling region to the load port. The metrology device is thereby couplable to the load port without being supported by the load port table.
Abstract: A method of producing a layout for a mask for use in semiconductor production includes a two-stage, iterative optimization of the position of scatter bars in relation to main structures being carried out. In a first stage, following first production of scatter bars and carrying out an OPC, scatter bars are again generated based on the corrected main structures. A renewed OPC is then carried out, followed by the renewed formation of scatter bars. This is repeated until the layout has been optimized sufficiently. Then, in the second stage, defocused exposure of the layout is simulated and, if required, further adaptation of the scatter bars is carried out. The first and second iterative stages can also be employed independently of each other. The common factor in the iterations is that the scatter bar positions are varied with each iteration and is therefore optimized.
Abstract: A semiconductor memory module with a changeover device by which an internal voltage supply circuit can be switched on or off in a simple manner. The changeover device has two evaluation circuits, one evaluation circuit being used for switching on the voltage supply and the second evaluation circuit being used for switching off the voltage supply. In this way, the two evaluation circuits can be optimized with regard to functionality, circuit layout and current consumption.
Abstract: A lowermost layer of control chips carries on it layers of memory chips. The memory chips are contacted via looped-through contacts that reach from one side of the other side of the memory chips and they are driven by the control chips that contain the test circuit for the memory chips.
Type:
Grant
Filed:
May 31, 2002
Date of Patent:
June 1, 2004
Assignee:
Infineon Technologies AG
Inventors:
Harry Hedler, Jochen Müller, Barbara Vasquez
Abstract: A method for presetting an ink feed in multi-color printing derives presetting values for zonal ink metering devices and for ink metering rollers acting over a printing width from a set value for a weight per unit area of a full tone area, zonal area coverage values and an ink stripe width. For each of a plurality of printing inks, the zonal ink metering devices and the ink metering rollers are preset in dependence of an ink demand for an image to be printed.
Abstract: A terminal and a method for a digital mobile radio system having a receiving device for receiving digital data packets, and having a decision device which before complete reception of an information unit, which comprises one or more data packets, uses a part of the information unit which has already been received to determine whether the information unit is or is not important. If it is determined that the information unit is not important, the decision device causes the receiving unit to ignore the rest of the information unit.