Abstract: A micro-electro mechanical (MEM) switch capable of inductively coupling and decoupling electrical signals is described. The inductive MEM switch consists of a first plurality of coils on a movable platform and a second plurality of coils on a stationary platform or substrate, the coils on the movable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the movable platform with respect to the coils on the stationary substrate. Diverse arrangements of coils respectively on the movable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.

Abstract: A method for optimizing the design of a chip or system by decreasing the cost function that encompasses a plurality of constraints in the presence of variations in the design parameters is described. The method makes use of numerical optimization, simulated annealing, or any other objective-driven optimization means, and accounts for uncertainties in the modeling of the design variables and functions. A significant reduction in the number of design constraints which are violated at the end of an optimization process is achieved, even when all the design constraints cannot be satisfied. The optimization also reduces the cycle time at which the design operates and limits the increase in the minimum operational cycle time of a particular implementation in the presence of variations that cannot be modeled or unpredictable variations in delay introduced by elements of the design.

Abstract: A semiconductor method integrates a DTC on SOI for the purpose of accomplishing a robust circuit design with low noise while reducing the silicon area used. The DTC for SOI devices comprises a buried oxide layer on a silicon substrate with a silicon layer over the buried oxide layer. Shallow trench insulation extends to the buried oxide layer in the silicon layer. A first trench is formed in the shallow trench insulation and extends through the buried oxide layer into the silicon substrate. The first trench has formed on the walls thereof an oxide insulating layer and is then filled with polysilicon to form the DTC. A second trench is formed in the silicon layer adjacent to the first trench and extends through the buried oxide layer into the silicon substrate. The second trench is filled with polysilicon and forms the substrate contact for the DTC.

Abstract: A method of forming CMOS semiconductor materials with PFET and NFET areas formed on a semiconductor substrate, covered respectively with a PFET and NFET gate dielectric layers composed of silicon oxide and different degrees of nitridation thereof. Provide a silicon substrate with a PFET area and an NFET area and form PFET and NFET gate oxide layers thereover. Provide nitridation of the PFET gate oxide layer above the PFET area to form the PFET gate dielectric layer above the PFET area with a first concentration level of nitrogen atoms in the PFET gate dielectric layer above the PFET area. Provide nitridation of the NFET gate oxide layer to form the NFET gate dielectric layer above the NFET area with a different concentration level of nitrogen atoms from the first concentration level. The NFET gate dielectric layer and the PFET gate dielectric layer can have the same thickness.

Abstract: A memory chip having fast access to pixel data of graphics image to be stored therein is described. The memory chip consists of data inputs and outputs (I/Os) divided into a plurality of blocks; memory arrays for storing data received from or sent to the I/Os, which are divided into the same number of blocks as the I/Os; and address input terminals for specifying addresses to be accessed by respective blocks of the memory arrays, which are divided into the same number of blocks as the memory arrays. The memory chip and the method for storing data enable reading data in a vertical line, in a diagonal line, and the like, at the same access speed as data in a horizontal line is being read. Furthermore, power consumption of the chip is significantly reduced, and the wiring arrangement of the I/Os is greatly simplified.

Abstract: As disclosed herein, an integrated circuit memory is provided which includes primary sense amplifiers coupled for access to a multiplicity of storage cells, second sense amplifiers, and pairs of input/output data lines (IODLs), each IODL pair being coupled to a primary sense amplifier, and each IODL pair carrying complementary signals representing a storage bit. The memory further includes pairs of bi-directional primary data lines (BPDLs), each BPDL pair being coupled to a second sense amplifier and each BPDL pair being adapted to carry other complementary signals representing a storage bit. Local buffers are adapted to transfer, in accordance with control input, the complementary signals carried by the IODLs to the BPDLs, and vice versa.

Abstract: MLC (multilayer ceramic) frequency selective circuit structures are disclosed. The MLC frequency selective circuit structures have a solenoid and toroid coil geometry in a multilayer electronic package which functions as a frequency selective tuned circuit in which both the number of turns and the aspect ratio of the solenoid coil are selected to adjust the tuned frequency. In some embodiments, a plurality of such coils can be connected together to provide a selected bandwidth about a tuned center frequency.

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse.

Abstract: An abstraction based multi-phase method for VLSI chip floorplanning is described. The abstraction based approach provides a solution to macro floorplanning in the presence of leaf level intermediate logic, and achieves it without loss of accuracy in the results. Annotations generated during abstraction are presented as floorplanning constraints which account for the abstracted data. The floorplanning and placement algorithms handle detailed netlists consisting of large blocks and small leaf level cells in an efficient manner. The abstraction based approach phases out by abstracting the leaf level logic (thus reducing the solution space of the floorplanner) and reintroducing them in the form of floorplan constraints (to account for the presence of the leaf level logic while determining the location of large blocks). The abstraction and bundling phases achieves a significant improvement in the performance of a simulated annealing based floorplanner.

Abstract: The test generation software takes advantage of the regularity of the structure without introducing significant changes to the test pattern generation software or to the manufacturing test tools. In this manner, the number of test patterns, the pattern data volume, and the length of the scan chains used for testing the imbedded repetitive structures is substantially reduced. The imbedded repetitive structures are tested by structuring and connecting the scan chain segments of the repeated structures in a way that permits identical test stimuli to be loaded into each copy of the repeated structure. A multiple input signature register or other such equivalent data compressing means provide the necessary data compression for reducing the volume of the test results that can be observed during scan by the tester to detect the presence of any fault that was observed.

Abstract: A method of fabricating a semiconductor transistor device comprises the steps as follows. Provide a semiconductor substrate with a gate dielectric layer thereover and a lower gate electrode structure formed over the gate dielectric layer with the lower gate electrode structure having a lower gate top. Form a planarizing layer over the gate dielectric layer leaving the gate top of the lower gate electrode structure exposed. Form an upper gate structure over the lower gate electrode structure to form a T-shaped gate electrode with an exposed lower surface of the upper gate surface and exposed vertical sidewalls of the gate electrode. Remove the planarizing layer. Form source/drain extensions in the substrate protected from the short channel effect. Form sidewall spacers adjacent to the exposed lower surface of the upper gate and the exposed vertical sidewalls of the T-shaped gate electrode. Form source/drain regions in the substrate.

Abstract: An integrated circuit including a field effect transistor (FET) is provided in which the gate conducter has an even number of fingers disposed between alternating source and drain regions of a substrate. The fingers are disposed in a pattern over an area of the substrate having a length in a horizontal direction, the area equaling the length multiplied by a width in a vertical direction that is occupied by an odd number of the fingers.

Abstract: A method of fabricating and the structure of a micro-electromechanical switch (MEMS) device provided with self-aligned spacers or bumps is described. The spacers are designed to have an optimum size and to be positioned such that they act as a detent mechanism for the switch to minimize problems caused by stiction. The spacers are fabricated using standard semiconductor techniques typically used for the manufacture of CMOS devices. The present method of fabricating these spacers requires no added depositions, no extra lithography steps, and no additional etching.

Abstract: A method for further reducing RC parasitics in an interconnect network following internal node elimination is described. A resistor is initially selected as a candidate for shorting, and it is established whether the accumulated delay error at either end of the resistor is less than a predetermined threshold. This threshold must be a fraction of the time-constant threshold selected by internal node elimination techniques in order to limit the growth of the accumulated delay errors. An important aspect of the invention is the simplicity of the formula used to change the downstream resistor values, namely, the product of the value of the resistor shorted and the ratio of the cumulative downstream capacitances of the two ends of the resistor whose value is being changed. This particular choice of updating the downstream resistor values minimizes the absolute-value of the delay errors at every node due to shorting of the selected resistor.

Abstract: An on-chip circuit and testing method to quantify a transistor charge transfer performance and charge retention capability of a DRAM cell in a realistic operational environment is described. The method and circuit can be extended to evaluate aging of the cell transfer device due to MOSFET wearout mechanisms that become activate during the charge transfer as well as during storage under operating or burn-in conditions. The on-chip circuit forces and senses a voltage to an individual DRAM storage capacitor allowing the pulse test methodology characterize the individual storage capacitor charge leakage rate and quantify the rate of charge transfer between the bitline and the storage capacitor in the DRAM cell.

Abstract: High performance asymmetric transistors including controllable diode characteristics at the source and/or drain are developed by supplying impurities with high accuracy of location by angled implants in a trench or diffusion from a solid body formed as a sidewall of doped material. High concentration gradient of impurities to support high performance is achieved by providing for reduced heat treatment after the impurity is supplied in order to limit diffusion previously necessary to achieve the desired location of impurity structures. Damascene or quasi-Damascene gate structures are also provided for high dimensional uniformity, increased manufacturing yield and structural integrity of the transistor.

Abstract: Gain cells adapted to trench capacitor technology and memory array configured with these gain cells are described. The 3T and 2T gain cells of the present invention include a trench capacitor attached to a storage node such that the storage voltage is maintained for a long retention time. The gate of the gain transistor and the trench capacitor are placed alongside the read and write wordline. This arrangement makes it possible to have the gain transistor directly coupled to the trench capacitor, resulting in a smaller cell size.

Abstract: A method and apparatus for loading solder balls into a mold. Solder balls are loaded into a reservoir having multiple exit ports. A removable mold is fitted into the apparatus and the reservoir is passed across the top of the mold while solder balls are fed into cavities in the mold. After the reservoir has advanced across the mold and the mold cavities are filled with solder balls, the reservoir is reset as a roller is simultaneously guided across the mold to seat the solder balls firmly within the mold. Alternatively, the roller may be applied to the solder balls while the reservoir advances across the mold, or both as the the reservoir is advanced and when it is returned to its original position.

Abstract: Body effects in vertical MOSFET transistors are considerably reduced and other device parameters are unaffected in a vertical transistor having a threshold implant with a peak at the gate and an implant concentration distribution that declines rapidly away from the gate to a plateau having a low p-well concentration value. A preferred embodiment employs two body implants—an angled implant having a peak at the gate that sets the Vt and a laterally uniform low dose implant that sets the well dopant concentration.

Abstract: P-type metal-oxide semiconductor field effect transistor (PMOSFET) devices have a characteristic property known as threshold voltage. This threshold voltage may consist of separate threshold voltages associated with the main portion of the gate region of the device and with the sidewall corner of the device. Under some conditions, the threshold behavior in the sidewall corner region of the device may dominate the performance of the device, not necessarily in the manner intended by the designer of the device. A method of controlling threshold voltage behavior is described. In particular, ion implantation of nitrogen in the gate sidewall region of the device can provide such control. Devices made by this method are also described.