Abstract: A method for performing a static timing analysis on an integrated circuit chip or module taking into account the effect of wiring interconnection coupling is described. The wiring interactions are modeled as appropriate equivalent grounded capacitances, allowing traditional delay calculation methods to be applied.

Abstract: A method and apparatus for improving the efficiency of scan testing of integrated circuits is described. This efficiency is achieved by reducing the amount of required test stimulus source data and by increasing the effective bandwidth of the scan-load operation. The reduced test data volume and corresponding test time are achieved by integrating a real-time test data decoder or logic network into each integrated circuit chip.

Abstract: A complementary metal oxide semiconductor integrated circuit containing a notched gate in the support device region as well as a method of forming the same are provided.

Abstract: A universal fuse latch device includes a latch circuit receiving an electrical signal for initializing the latch circuit to a first state; one or more legs connected at the latch node, with a first leg implementing a fuse type element capable of transitioning the latch from the first state to a second state; and a second leg including an anti-fuse type element, wherein the fuse latch is provided with a fuse resistance trip point to ensure adequate reading of one of the fuse and anti-fuse type elements. The universal fuse latch device may be part of a programmable fuse bank including a plurality of information fuse latches for storing redundancy information in a memory system and capable of being simultaneously interrogated. A master fuse control device comprising the universal fuse latch circuit is programmed in accordance with a priority of legs to be interrogated in the information fuse latches.

Abstract: A method and structure for analyzing the effect of electrical noise in an integrated circuit fabricated in a silicon-on-insulator (“SOI”) technology. The present invention uses a static noise analysis to evaluate an integrated circuit's response to electrical noise, taking into account hysteresis effect and parasitic bipolar current voltage, both of which are unique to integrated circuits fabricated in a SOI technology process. The present invention also includes a computer, computer storage device, computer program and software incorporating the method steps and simulating the testing and analysis of the circuit under test.

Abstract: A silicon on insulator (SOI) dynamic random access memory (DRAM) cell and array and method of manufacture. The memory cell includes a trench storage capacitor connected by a self aligned buried strap to a vertical access transistor. A buried oxide layer isolates an SOI layer from a silicon substrate. The trench capacitor is formed in the substrate and the access transistor is formed on a sidewall of the SOI layer. A polysilicon strap connected to the polysilicon plate of the storage capacitor provides a self-aligned contact to the source of the access transistor. Initially, the buried oxide layer is formed in the wafer. Deep trenches are etched, initially just through the SOI layer and the BOX layer. Protective sidewalls are formed in the trenches. Then, the deep trenches are etched into the substrate. The volume in the substrate is expanded to form a bottle shaped trench.

Abstract: A method of distributed timing analysis for a network which has been partitioned into at least two partitions, with each partition being assigned to a separate timing analysis process which communicates with the other processes is provided. A depth first search is performed by the process assigned to the partition in which the node for which timing information is desired is located. When the depth first search encounters a node for which a timing value is required which is located in another partition, a request is immediately sent to the process corresponding to that partition for the required timing information. When the request for timing information from the other partition is answered, the associated node is placed in the propagation queue. Also, as a node is processed, successor nodes which have had their predecessors processed are added to the propagation queue. The nodes in the propagation queue are processed and timing values are computed.

Abstract: A method for etching an insulating layer without damage to the conducting layer and associated liner layer within the insulating layer. A dielectric layer is deposited on a semiconductor substrate and then patterned. A liner layer and a conducting layer are then deposited within the patterned dielectric. A passivating layer is deposited on top of the conducting layer after the conducting layer has been planarized through chemical-mechanical polishing while simultaneously etching the dielectric layer through a process that does not damage the underlying conducting and liner layers. The insulating layer is preferably a dielectric such as silicon dioxide and the liner layer is tantalum, tantalum nitride or a combination of the two. The passivating layer preferably consists of carbon and fluorine bound up in various chemical forms. The conducting layer preferably consists of copper.

Abstract: A method for generating a patterned SOI photomask used for embedded DRAMs is described. The method systematically identifies embedded DRAM areas to be excluded from the SOI process and generates the shapes to be printed on the photomask so that the embedded DRAM may be fabricated on bulk silicon. The method includes the steps of: identifying and sorting DRAM array well shapes by common electrical net, resulting in a single array well shape for each electrical net (i.e., embedded DRAM cell). Next, all the n-band contacts touching a given array well shape are collected. These shapes are merged by common electrical net. A shape is then generated which is the smallest enclosing rectangle of the common electrical net of the n-band contact shapes. This represents the patterned SOI shape and defines the bulk areas onto which the embedded DRAM is to be built. Accordingly, the embedded DRAM macro is constructed in bulk areas while the logic is constructed in SOI.

Abstract: A simple, low-cost package consisting of a plurality of charge-coupled devices (CCD) having a transparent cover integrated to the CCDs is described. Interconnecting wires having a fine pitch are defined on the cover away from the light sensitive area of the CCDs to provide enhanced wiring capability. The cover is constructed on the same semiconductor wafer containing the CCDs, which are preferably arranged in a matrix formation, allowing the wafer to be diced into individual chips having any desired number of CCDs, all of which are protected by the integrated transparent cover facing the light sensitive surface of the CCDs. This structure has the further advantage of reducing defects by mounting the cover before dicing and handling the individual chips only after the cover window is already in place. Dicping width control is achieved using oxide trench as an etch channel.

Abstract: A diagnostic method engages all the neurons of an artificial neural network (ANN) based on mapping an input space defined by vector components based on category, context, and actual field of influence (AIF). The method includes the steps loading the components of a first and second input vectors into the ANN; engaging all the neurons of a same prototype; having all the neurons compute their own distance between the respective prototypes and the second input vector (which should be the same if the neurons were good); determining the minimum distance Dmin and comparing Dmin with a distance D measured between the first and the second input vectors. If Dmin<D, it is indicative that at least one failing neuron exists (i.e., either the distance, the category or the AIF value differs from a predetermined expected value), in which case the failing neuron is isolated.

Abstract: A novel method for forming substrate contact regions on a SOI substrate without requiring additional space, and in order to provide lower diffusion capacitance. The method utilizes known semiconductor processing techniques. This method for selectively modifying the BOX region of a SOI substrate involves first providing a silicon substrate. Then, ion implanting the base using SIMOX techniques (e.g. O2 implant) is accomplished. Next, the substrate is photopatterned to protect the modified BOX region. Then, further ion implanting using a “touch-up” O2 implant is accomplished, thereby resulting in a good quality BOX as typically practiced. The final step is annealing the substrate. The area of the substrate, which had a mask present, would not receive the “touch-up” O2 implant (second ion implant), which in turn would result in a leaky BOX.

Abstract: A method of improving surface morphology of a semiconductor substrate when using an SOI technique comprises providing a silicon ingot positioned on a support member, orientating the silicon ingot in relation to the support member, and a cutting device, and cutting the silicon ingot along about a (100) crystal plane of the silicon ingot, preferably using a wire saw. This then provides a silicon substrate having an initial surface defining a miscut angle which is less than about 0.15 degrees from the (100) crystal plane. The method then comprises processing the silicon substrate using SIMOX processing, which includes implanting oxygen atoms in the silicon substrate to form a buried oxide layer and annealing the silicon substrate to provide a final substrate surface. Finally, the method includes accepting the final substrate surface for further processing when the final substrate surface measures between 2-20 Å RMS using an atomic force microscopy technique.

Abstract: A method of configuring partitions for different circuit or other operational areas on an integrated circuit initially identifies points representing components of an integrated circuit with respect to a coordinate system having a horizontal axis and a vertical axis, and subsequently creates a first isothetic rectangular partition containing all of the identified points of the integrated circuit. The method then continues by subdividing the first isothetic rectangular partition with respect to the horizontal axis by creating a plurality of isothetic rectangular sub-partitions collectively containing all of the identified points of the integrated circuit. Each of the isothetic rectangular sub-partitions is separated by a line parallel to the horizontal axis. These isothetic rectangular sub-partitions collectively encompass a minimum area containing all of the identified points.

Abstract: A self scrubbing buckling beam contactor for contacting an array of pads positioned on a device under test is described. The contactor consists of three insulating dies: a top, an offset and a lower die separated from each other by an insulated spacer of variable thickness. Each die is provided with holes. The buckling beam has an array of flexible wires positioned substantially perpendicular to the dies, each of the flexible wires crossing a corresponding hole in each of the top, offset and lower dies to allow each wire respectively contact a pad of the device under test. By shifting the center of the hole of the lower die relative to the center of the offset die, the tip of the wire exits from the lower die at an angle with respect to the plane formed by the pads of the device under test.

Abstract: A method for determining whether a defect that is detected by photomask inspection will adversely affect a semiconductor device, such as a wafer. The method has the ability of relating defect specifications directly to device performance and wafer yields, and assessing the impact of combining the defect with the critical dimension error using standard inspection tools.

Abstract: A process for in-line testing of a metal-oxide-semiconductor field effect transistor (MOSFET) device for negative bias thermal instability (NBTI), which degrades the gate oxide of the MOSFET device. The process generally comprises four steps. First, a hole injection method is selected that produces approximately the same gate oxide degradation as the NBTI under test. Second, a correlation is established between the NBTI degradation and device shifts due to the selected hole injection degradation method. Third, an in-line procedure is developed based on the hole injection method, using the second step to relate the measured shift to NBTI. Finally, a NBTI specification is defined based on the hole injection method using the second step. The MOSFET device is preferably a p-type MOSFET device and the hole injection method is preferably a channel hot-carrier stress method.

Abstract: A semiconductor device includes interconnected conductor lines comprising a lower Interlayer Dielectric (ILD) layer having a top surface formed on a substrate. Several lower conductor lines are formed on the top surface of the lower ILD layer surrounded by an insulator formed on the lower ILD layer. Each of a set of resistive studs has sidewalls, a lower end and an upper end and it is joined to the top of the lower conductor line at the lower end. There are several intermediate conductor lines formed between the resistive studs separated from adjacent studs by a liner layer and a capacitor dielectric layer. Upper conductor lines are formed on a upper level. Each has a bottom surface in contact with a corresponding one of the resistive studs. A central ILD layer is formed below the intermediate conductor to electrically insulate and separate the intermediate conductor lines from the lower conductor lines.

Abstract: A structure and process for semiconductor fuses and antifuses in vertical DRAMS provides fuses and antifuses in trench openings formed within a semiconductor substrate. Vertical transistors may be formed in other of the trench openings formed within the semiconductor substrate. The fuse is formed including a semiconductor plug formed within an upper portion of the trench opening and includes conductive leads contacting the semiconductor plug. The antifuse is formed including a semiconductor plug formed within an upper portion of the trench opening and includes conductive leads formed over the semiconductor plug, at least one conductive lead isolated from the semiconductor plug by an antifuse dielectric. Each of the fuse and antifuse are fabricated using a sequence of process operations also used to simultaneously fabricate vertical transistors according to vertical DRAM technology.

Abstract: An innovative MOSFET having a raised source drain (RSD) is constructed prior to implanting source-drain dopants. The RSD structure thus built has a distinct advantage in that the offset from the RSD to the MOSFET channel is fully adjustable to minimize the overlap capacitance in the device. The RSD construction uses a selective epitaxial process to effectively reduce the drain-source resistance. This improvement is even more significant in thin-film SOI technology. Using an RSD, the film outside the channel area thickens which, in turn, reduces the parasitic resistance.