Abstract: A tissue graft holder comprising a tray having a plurality of compartments for supporting tissue grafts and a hydrating solution, a channel connecting each compartment to an edge of the tray. The tray is rotatably mounted to a support which in turn is adapted for attachment to an appendage of a user. A dissecting cutting board to accommodate the graft trays and maintain tissue hydration during graft dissection.
Abstract: A back-end assembly for use with a front-end assembly in acquiring phase-shifted interferograms having a plurality of imaging modules (Ma, Mb, Mc). Each module (Ma, Mb, Mc) has a quarter wave plate (30a, 30b, 30c), a polarizer (32a, 32b, 32c), and an image sensor (34a, 34b, 34c) so that each polarizer has a different rotation orientation thus acquiring phase-shifted interferograms.
Type:
Grant
Filed:
November 26, 2003
Date of Patent:
January 27, 2009
Assignee:
Trology, LLC
Inventors:
Piotr Szwaykowski, Raymond J. Castonguay, Frederick N. Bushroe
Abstract: A nuclear-cored battery having a spherical core that emits radiation and is surrounded by a ceramic phosphor material having a structural defect such that the ceramic material within the ceramic phosphor material is used to shield and absorb the radiation emitted by the nuclear core while the phosphors are excited by the radiation causing them to produce energy in the form of photons. Surrounding the ceramic phosphor material is a photovoltaic layer that transforms the photons into a flow of electrons to create an energy source in the form of a sphere. A P and N layer sandwiches a plurality of spheres therebetween to harness the electron flow created by the photovoltaic layers of the spheres.
Abstract: A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.
Type:
Grant
Filed:
March 19, 2004
Date of Patent:
January 20, 2009
Assignee:
Tohoku Techno Arch Co., Ltd.
Inventors:
Takafumi Yao, Takuma Suzuki, Hang-ju Ko, Agus Setiawan
Abstract: A connection between a shielding sleeve of a connector housing and an inner as well as an outer braided shield of an electric cable is produced by providing a shielding sleeve with a contact, the end piece of which has an omega-like shape and regionally encompasses the braided shield in a contacting fashion, in which an additional contact tab protruding out of the contact pad is provided for contacting the braided shield.
Type:
Grant
Filed:
September 25, 2007
Date of Patent:
January 20, 2009
Assignee:
Harting Electronics GmbH & Co. KG
Inventors:
Jean Francois Bernat, Jean-Merri de Vanssay, Alexandre Mermaz
Abstract: A casing for a downlight having a tubular body from which the light of a lamp when installed in the body is emitted from the front of the body and having a rear end wall closing the body from the rear, wherein intumescent material is placed within the tubular body lining the tubular wall of the tubular body.
Abstract: An apparatus includes an integrated circuit that includes low side power supply circuitry that provides an output voltage for H-bridge circuitry. The low side power supply circuitry includes one transistor that provides one current to the output of the low side power supply circuitry in response to the output voltage of the low side power supply circuitry dropping below a quiescent level. The low side power supply circuitry also includes a second transistor that controls the conduction state of a third transistor, based at least in part, upon the first transistor providing the first current to the output of the low side power supply circuitry. The third transistor provides a second current to the output of the low side power supply circuitry.
Abstract: An in-plane-switching-mode (IPS) LCD device includes a TFT substrate and a CF substrate sandwiching therebetween a liquid crystal (LC) layer, and a pair of polarizing films sandwiching therebetween the TFT and CF substrates and LC layer. The TFT substrate includes a SiNx insulation layer having a higher refractive index compared to the TFT substrate and LC layer. The thickness (d) of the SiNx layer is expressed by d=(100+170×k)±30 where k is an integer not smaller than zero and not larger than 5. The protective layer of the light-incident-side polarizing film near the insulation film has a thickness larger than zero and not larger than 57 ?m.
Abstract: A method of manufacturing a film printed circuit board is provided. A film substrate consisting of a polyimide substrate, an alloy layer and a first copper layer is provided. A first lithographic and etching process is performed to pattern the copper layer and the alloy layer and a plurality of conductive line structures is formed on the polyimide substrate. A second copper layer is formed over the polyimide substrate and the conductive line structures. A second lithographic and etching process is performed to pattern the second copper layer.
Type:
Grant
Filed:
April 21, 2006
Date of Patent:
January 6, 2009
Assignee:
Himax Technologies Limited
Inventors:
Chia-Hui Wu, Pai-Sheng Cheng, Hung-Yi Wang
Abstract: A method for changing an amorphous silicon film to a poly-crystalline silicon film includes the steps of irradiating an elongate pulse laser beam onto the silicon film while scanning in the direction normal to the major axis of the elongate pulse laser beam, to form a plurality of irradiated areas, irradiating flat-surface light onto the irradiated areas in the direction parallel to the major axis, and analyzing distribution of the reflected light from the irradiated areas to determine the threshold value of micro-crystallization. The threshold value is used to further determine an energy density of the elongate pulse laser beam for the phase change process.
Abstract: In a connector for accommodating individual pre-fabricated electrical cables fitted with electric pin contacts or socket contacts is provided. The connector proposes to insert the electric contacts into longitudinally aligned and semi-enclosed contact chambers and to insert the carrier member into a surrounding connector sleeve, wherein a carrier sleeve arranged within the connector sleeve features raised longitudinal ribs for aligning the electric contacts in the contact chambers. The connector sleeve is composed of a first connector part, a second connector part and a carrier sleeve, wherein the first connector part on the mating side is rotatably arranged on the carrier sleeve while the second connector part that points to the cable connection side is rigidly connected to the carrier sleeve.
Abstract: A method of determining surface properties is provided, in which radiation is irradiated onto a first region of a surface to be examined, then at least some of the radiation irradiated onto the first region and returned by the latter is detected, and a measured value characteristic of this returned radiation is output. In a further step, the radiation is irradiated onto a second region of the surface and once again at least some of the radiation irradiated onto the second region and returned by the latter is detected, and a second measured value characteristic of this radiation is output. Finally, a result value is output which is characteristic of a relationship between the first measured value and the second measured value.
Type:
Grant
Filed:
May 30, 2006
Date of Patent:
December 23, 2008
Assignee:
BYK-Gardner GmbH
Inventors:
Peter Schwarz, Gerhard Hentschel, Konrad Lex
Abstract: A decoding method is provided which is capable of achieving decoding of error correcting codes in a simple configuration and in a short time. In the method of decoding error correcting codes to perform iterative decoding which consists of forward processing, backward processing, and extrinsic information value calculating, a backward processing path metric value obtained in the previous decoding iteration for a window boundary is used as an initial value of the backward processing path metric value for the window boundary in the next decoding iteration.