Abstract: Streaming data may be decoded by dividing a process for decoding the streaming data into two or more tasks based on data dependencies between the two or more tasks. The two or more tasks may be executed in parallel on three or more processors in a way that balances a processing load of executing the two or more tasks among the three or more processors.

Abstract: An optical metrology tool may include a source of electromagnetic radiation having a characteristic wavelength, an objective having a central obscuration, a near field element located within the central obscuration of the objective, and an electromagnetic radiation detector coupled to the near field element. A mechanism is configured to bring the near field element into proximity to the target. A characteristic dimension of the near field element is sufficient smaller than the wavelength of the electromagnetic radiation that when the electromagnetic radiation passes through the cavity and the cavity is in sufficient proximity to the target that evanescent waves can couple energy from propagating radiation in the near-field element to the target. The detector detects an optical signal due to the evanescent waves coupling to the target.

Abstract: A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad.

Abstract: An optical assembly for double passing a transmission grating may include a prism having first, second and third surfaces. A transmission grating may be bonded to the first surface. A first mirror coating may be bonded to the second surface and a second mirror coating to the third surface. The first, second and third surfaces, the transmission grating and the first and second mirror coatings are configured such that light of a predetermined wavelength entering the prism that is incident on the transmission grating is diffracted a first time by the transmission grating towards the second surface, reflected from the second surface to the third surface, reflected from the third surface back to the transmission grating, and diffracted a second time by the transmission grating as the light exits the prism.

Abstract: In an audio headset having one or more far-field microphones mounted to the headset; and one or more speakers mounted to the headset environmental sound may be recorded using the one or more far-field microphones and mixed with source media sound to produce a mixed sound. The mixed sound may then be played over the one or more speakers.

Abstract: Lateral DMOS devices having improved drain contact structures and methods for making the devices are disclosed. A semiconductor device comprises a semiconductor substrate; an epitaxial layer on top of the substrate; a drift region at a top surface of the epitaxial layer; a source region at a top surface of the epitaxial layer; a channel region between the source and drift regions; a gate positioned over a gate dielectric on top of the channel region; and a drain contact trench that electrically connects the drift layer and substrate. The contact trench includes a trench formed vertically from the drift region, through the epitaxial layer to the substrate and filled with an electrically conductive drain plug; electrically insulating spacers along sidewalls of the trench; and an electrically conductive drain strap on top of the drain contact trench that electrically connects the drain contact trench to the drift region.

Abstract: Embodiments of the invention relate to lithography method useful for patterning at sub-micron resolution. This method comprised of deposition and patterning self-assembled monolayer resists using rolling applicator and rolling mask exposure apparatus. Typically the application of these self-assembled monolayers involves contacting substrate materials with a rotatable applicator in the shape of cylinder or cone wetted with precursor materials. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact with self-assembled monolayer. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating mask surface comprises metal nano holes or nanoparticles.

Abstract: Consumer devices and methods for operating consumer devices are disclosed. A consumer electronic device may include user identification unit incorporated into a control module of the device. A user of a consumer electronics device is uniquely identified using a metric that is contingent upon the user using the device normally. Content that depends on the user's identity can be provided to or from the device. The user may be uniquely identified using a biometric sensor to provide the metric. The content provided to or from the device or other performance characteristics of the device may be tailored to the particular user based on the user's identity.

Abstract: Contamination may be removed from an emitter tip of a field emitter during operation of the emitter tip in a system having an electron beam column having an electrode with a beam defining aperture, an electron collector located proximate to the beam defining aperture between the electrode and the field emitter, and an electron deflector located between the emitter tip and the electron collector. At regular predetermined intervals an electron beam from the emitter tip may be deflected away from a path through the beam defining aperture and onto the electron collector. An electron beam current to the electron collector may be determined and the emitter tip may be flash heated if the current to the electron collector is below a threshold.

Abstract: A semiconductor device and a method for making a semiconductor device are disclosed. A trench mask may be applied to a semiconductor substrate, which is etched to form trenches with three different widths. A first conductive material is formed at the bottom of the trenches. A second conductive material is formed over the first conductive material. An insulator layer separates the first and second conductive materials. A first insulator layer is deposited on top of the trenches. A body layer is formed in a top portion of the substrate. A source is formed in the body layer. A second insulator layer is applied on top of the trenches and the source. A contact mask is applied on top of the second insulator layer. Source and gate contacts are formed through the second insulator layer. Source and gate metal are formed on top of the second insulator layer.

Abstract: Forward error correction may be implemented in a network having first, second, third and fourth nodes. The second node receives streaming media message packets and one or more check packets from an upstream first node. The second node transmits the message packets and check packets to a downstream third node. The second node transmits a second set of one or more check packets to a fourth node that is downstream of the third node.

Abstract: Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of rotationally symmetric disk materials, like magnetic and optical disks, where a rotatable mask is used to image a radiation-sensitive material. Typically the rotatable mask comprises a cone. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the disk is in contact or close proximity with the disk. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cone surface comprises metal nano holes or nanoparticles.

Abstract: Defects observed by imaging tools may be classified by automatic comparison of features observed in a defect image with design information relating to corresponding portions of the image. Defect information may be generated from a defect image from a defect imaging tool. Design information relating to one or more structures to be formed on the substrate in a vicinity of the defect may be retrieved. The defect may be classified based on a combination of the defect information from the defect image and design information relating to one or more structures to be formed on the substrate in the vicinity of the defect.

Abstract: An atomic compare and swap operation that can be implemented in processor system having first and second processors that have different sized memory transfer capabilities. The first processor notifies the second processor to perform a compare and swap operation on an address in main memory. The address has a size less than or equal to a maximum memory transfer size for the second processor and greater than a maximum memory transfer size for the first processor. The second processor atomically performs the compare and swap operation and notifies the first processor of the success or failure of the compare and swap operation.

Abstract: A polarizing device may be used with sample inspection system having one or more collection systems that receive scattered radiation from a region on a sample surface and direct it to a detector. The polarizing device disposed between the collection system(s) and the detector. The polarizing device may include a plurality of polarizing sections. The sections may be characterized by different polarization characteristics. The polarizing device is configured to transmit scattered radiation from defects to the detector and to block noise from background sources that do not share characteristics with scattered radiation from the defects from reaching the detector while, maximizing a capture rate for the defects the detector at a less than optimal signal-to-noise ratio.

Abstract: In a node configured to communicate with one or more other nodes over a network, available bandwidth for network traffic may be distributed among two or more distinct channels of communication within a single application running on the node. An available bandwidth may be detected for communication between the first node and a second node. A distribution may be determined for the available bandwidth among the two or more communication channels. A sending rate may be adjusted for data sent from the first node to the second node over one or more of the two or more communication channels in response to a detected change in the available bandwidth.

Abstract: Automatic player profile generation may be implemented for an interactive online game in which one or more players interact via one or more client devices connected to a server device via a network. Information relating to game activity may be collected for the one or more players during one or more game sessions with the server device. One or more player statistics relevant to the game activity may be calculated for each of the one or more players during the game session based on the information relating to game activity with the server device. A player profile may be generated for each of the one or more players with the server. Each player profile may include the one or more player statistics for a corresponding one of the one or more players.

Abstract: Output pulses from an optical system having a seed source and an optical amplifier coupled to the seed source may be controlled by controlling a power of a seed signal from the seed source. The seed signal may be varied between a minimum value and a maximum value in a way that the seed signal exhibits one or more pulse bursts. Each pulse burst may contain one or more pulses. During an inter-pulse period between successive pulses within a pulse burst or between successive pulse bursts, the power of the seed signal may be adjusted to an intermediate value that is greater than the minimum value and less than the maximum value. The intermediate value is chosen to control a gain in the optical amplifier such that a pulse or pulse burst that follows the period exhibits a desired behavior.

Abstract: A semiconductor device formed on a semiconductor substrate may include a component formed in a contact trench located in an active cell region. The component may comprise a barrier metal deposited on a bottom and portions of sidewalls of the contact trench and a tungsten plug deposited in a remaining portion of the contact trench. The barrier metal may comprise first and second metal layers. The first metal layer may be proximate to the sidewall and the bottom of the contact trench. The first metal layer may include a nitride. The second metal layer may be between the first metal layer and the tungsten plug and between the tungsten plug and the sidewall. The second metal layer covers portions of the sidewalls of not covered by the first metal layer.

Abstract: Methods and apparatus for cell processors are disclosed. A policy module is loaded from a main memory of a cell processor into the local memory of a selected synergistic processing unit (SPU) under control of an SPU policy module manager (SPMM) running on the SPU. The policy module loads a work queue from the main memory into the local memory of the SPU. The policy module interprets and process one or more tasks from the work queue on the SPU. The selected SPU performs the task(s) and after completion or upon a pre-emption, returns control of the SPU to the SPMM.