Abstract: A beam of incident light may be positioned on a target by directing the beam towards the target and transmitting the incident beam of light through one or more refractive plates having first and second parallel refracting surfaces in a path of the beam and adjusting an angular orientation of one or more refractive plates.

Abstract: An edge-handling chuck, a system for holding and rotating a test substrate at a high speed and a method for chucking a rotating substrate are disclosed. The Chuck includes a plate having a central axis, a fluid opening and a top surface with a varied topography characterized by symmetry about the central axis. The topography is such that a volume flow rate of fluid between the fluid opening and a periphery of the top surface sufficient to counteract substrate sagging is significantly less than a volume flow rate needed for a similar but flat-surfaced chuck to similarly counteract such sagging. The system may further include a spindle motor and a gas system that supplies gas through the fluid opening to a gap between the top surface and a back surface of the substrate. A radial velocity of the fluid through the gap is approximately constant.

Abstract: A sensor network collects time-series data from a process tool and supplies the data to an analysis system where pattern analysis techniques are used to identify structures and to monitor subsequent data based on analysis instructions or a composite model. Time-series data from multiple process runs are used to form a composite model of a data structure including variation. Comparison with the composite model gives an indication of tool health. A sensor network may have distributed memory for a more simplified configuration.

Abstract: Methods and apparatus for measuring an optical azimuth angle ?O of a substrate relative to a plane of detection in scatterometry tools are disclosed. A grating target on a stage of a scatterometry tool may be illuminated and positions of the resulting diffraction orders may be observed. The optical azimuth angle may be determined from the positions of the diffraction orders. Alternatively, polarization-dependent signals of radiation scattered from a line grating may be measured for equal and opposite polarization angles +A and ?A. A combination signal may be computed from the polarization-dependent signals obtained at +A and ?A and a property of the combination signal may be calculated for several mechanical Azimuth angles ?M. A relationship between the optical azimuth angle ?O and the mechanical azimuth angle ?M may be determined from a behavior of the property as a function of mechanical azimuth angle ?M.

Abstract: Methods copying data from one location to another in a main memory of a cell processor are disclosed. A portion of the data is transferred a first main memory location to the local store of one or more SPU and then transferred from the local store to a second main memory location.

Abstract: Cell processor task management in a cell processor having a main memory, one or more power processor units (PPU) and one or more synergistic processing units (SPU), each SPU having a processor and a local memory is described. An SPU task manager (STM) running on one or more of the SPUs reads one or more task definitions stored in the main memory into the local memory of a selected SPU. Based on information contained in the task definitions the SPU loads code and/or data related to the task definitions from the main memory into the local memory associated with the selected SPU. The selected SPU then performs one or more tasks using the code and/or data.

Abstract: A measuring device incorporating a substrate with sensors that measure the processing conditions that a wafer may undergo during manufacturing. The substrate can be inserted into a processing chamber by a robot head and the measuring device can transmit the conditions in real time or store the conditions for subsequent analysis. Sensitive electronic components of the device can be distanced or isolated from the most deleterious processing conditions in order increase the accuracy, operating range, and reliability of the device. Isolation may be provided by vacuum or suitable material and phase change material may be located adjacent to electronics to maintain a low temperature.

Abstract: Methods and systems for determining the quality of a substrate are disclosed. One or more substrates may be examined to determine whether bending is present at the edge of a substrate. The substrate may be accepted if it is determined that bending is not present at the edge of the substrate. The substrate may be rejected if it is determined that bending is present at the edge of the substrate.

Abstract: A method for determining the depth etch, a method of forming a shielded gate trench (SGT) structure and a semiconductor device wafer are disclosed. A material layer is formed over part of a substrate having a trench. The material fills the trench. A resist mask is placed over a test portion of the layer of material. The resist mask does not cover the trench. The layer of material is isotropically etched. An etch depth may be determined from a characteristic of etching of the material underneath the mask. Such a method may be used for forming SGT structures. The wafer may comprise a layer of material disposed on at least a portion of a surface of semiconductor wafer; a resist mask comprising an angle-shaped test portion disposed over a portion of the layer of material; and a ruler marking on the surface of the substrate proximate the test portion.

Abstract: Atomic operation may be implemented in a processor system comprising a main memory and a power processor element (PPE) including a power processor unit (PPU) coupled to an external cache. The PPE may atomically load data from a lock-line in the main memory into a first location X in the external cache. A size of the data and the lock line may be larger than a data size for the standard atomic operations that may be performed with the PPE. The data may be reserved in a second location Y in the external cache.

Abstract: Handling of multiple connections during NAT traversal for a node behind a symmetric NAT is disclosed. The likelihood of connection failure during symmetric NAT traversal may be reduced by serializing critical time windows after port prediction. Once a connection request has been sent for a first connection, port prediction for a subsequent connection may be delayed until a connectivity check has begun for the first connection. This process may be repeated to handle NAT traversal for multiple simultaneous connections to different nodes.

Abstract: Methods and apparatus for voice recognition are disclosed. A voice signal is obtained and two or more voice recognition analyses are performed on the voice signal. Each voice recognition analysis uses a filter bank defined by a different maximum frequency and a different minimum frequency and wherein each voice recognition analysis produces a recognition probability ri of recognition of one or more speech units, whereby there are two or more recognition probabilities ri. The maximum frequency and the minimum frequency may be adjusted every time speech is windowed and analyzed. A final recognition probability Pf is determined based on the two or more recognition probabilities ri.

Abstract: A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package.

Abstract: Methods and systems for increasing the threshold for stimulated Brillouin scattering are described. A seed source may generate one or more chirped seed pulses characterized by a pulse duration ?, and a frequency chirp. The pulse duration ? may be greater than about 2 nanoseconds. A photonic crystal amplifier amplifies the seed pulses to produce one or more amplified pulses characterized by a peak power P greater than about 1 kilowatt. The pulse duration ?, frequency chirp, and the photonic crystal fiber may be selected such that a threshold for stimulated Brillouin scattering (SBS) in the photonic crystal fiber is greater than the peak power P.

Abstract: A method for controlling chemical dry etching to improve smoothness of an etched surface is disclosed. Ions are implanted into a surface to form a volatilizable compound at a temperature low enough to avoid, reduce, or eliminate formation of three-dimensional structures of the volatilizable compound that might create the roughness at an etched surface of the volatilizable compound. The ions are applied in a sufficient energy to penetrate to a predetermined depth of material that is to be removed from the surface in an etching cycle, and in a sufficient dosage to achieve full formation of the volatilizable compound. The surface of the volatilizable compound is exposed to a gas composition for a time duration sufficient to completely etch the volatilizable compound.

Abstract: Prioritizing network traffic among two or more distinct channels of communication within a single application in a node configured to communicate with one or more other nodes over a network is disclosed. For a particular time quantum, a bandwidth quantum may be distributed amongst two or more communication channels according to priorities associated with those channels.

Abstract: A method and apparatus for determining dielectric layer properties are disclosed. Dielectric layer properties such as dielectric thickness, dielectric leakage or other electrical information may be determined for a multilayer film stack on a semiconducting or conducting substrate. The film stack may comprise a first dielectric layer between the substrate and an intermediate layer of semiconducting or conducting material, and a second dielectric layer disposed such that the intermediate layer is between the first and second dielectric layers. The dielectric layer properties may be determined by a) depositing electrical charge at one or more localized regions on an exposed surface of the second dielectric layer; b) performing a measurement of an electrical quantity at the one or more localized regions; and c) determining a property of the second dielectric layer from the one or more measurements.

Abstract: A hand-held electronic device is disclosed. The device may comprise a case case having one or more major surfaces; a touch screen disposed on one of the major surfaces, the touch screen; a processor operably coupled to the touch screen; and one or more tactile pixels disposed proximate the touch screen. Each of the tactile pixels includes an actuatable portion coupled to an actuator and a sensor. The actuator and sensor are coupled to the processor. The actuator is configured to actuate in response to instructions from the processor and the sensor is configured to generate signals as inputs to one or more programs executed by the processor when pressure is applied to the actuatable portion. The actuatable portion is actuatable by the actuator between first and second positions. A tactile feel of the actuatable portion is different in the first and second positions.

Abstract: A method for network communication and an apparatus for discovery of a maximum transmission unit (MTU) size in a path between two nodes of a network are disclosed. A plurality of test packets of varying transmission unit (TU) size may be sent from the first host to the second host. A “do not fragment” (DF) flag for the test packets is not set. It is determined whether one or more of the test packets were received by the second host. An estimated path MTU for a network path between the first and second hosts size may then be calculated based on one or more patterns of receipt of the test packets by the second host. Once the estimated Path MTU size has been determined, message packets of a size less than or equal to the Path MTU size may be sent over the network path.

Abstract: High-mobility vertical trench DMOSFETs and methods for manufacturing are disclosed. A source region, a drain region or a channel region of a high-mobility vertical trench DMOSFET may comprise silicon germanium (SiGe) that increases the mobility of the charge carriers in the channel region. In some embodiments the channel region may be strained to increase channel charge carriers mobility.