Abstract: A process for forming a bipolar transistor with a raised extrinsic base, an emitter, and a collector integrated with a CMOS circuit with a gate. An intermediate semiconductor structure is provided having CMOS and bipolar areas. An intrinsic base layer is provided in the bipolar area. A base oxide is formed across, and a sacrificial emitter stack silicon layer is deposited on, both the CMOS and bipolar areas. A photoresist is applied to protect the bipolar area and the structure is etched to remove the sacrificial layer from the CMOS area only such that the top surface of the sacrificial layer on the bipolar area is substantially flush with the top surface of the CMOS area. Finally, a polish stop layer is deposited having a substantially flat top surface across both the CMOS and bipolar areas suitable for subsequent chemical-mechanical polishing (CMP) to form the raised extrinsic base.

Abstract: An SOI chip having an isolation barrier. The SOI chip includes a substrate, an oxide layer deposited on the substrate, and a silicon layer deposited on the oxide layer. A gate is deposited above the silicon layer. A first metal contact is deposited above the gate to form an electrical contact with the gate. Second and third metal contacts are deposited to form electrical contacts with the silicon layer. The isolation barrier extends through the silicon layer and the oxide layer, and partially into the substrate, to block impurities in the oxide layer outside the isolation barrier from diffusing into the oxide layer inside the isolation barrier. The isolation barrier surrounds the gate, the first metal contact, the second metal contact, and the third metal contact—which define an active chip area inside the isolation barrier. A method of manufacturing the SOI chip is also disclosed.

Abstract: Method and structures for making a highly reliable metal interlock structure with continuous via and line structures. The absence of barrier layers between vias and lines or absence of interlevel dielectric layer is used to enhance chip performance.

Abstract: A method for forming a semiconductor devices structure includes providing a semiconductor substrate, forming a deep trench continuously in the substrate to separate a first region from a second region, and then forming a silicon-on-insulator region in the first region while maintaining a non-silicon-on-insulator region in the second region. The deep trench has a depth which is at least as deep as the depth of the buried oxide in the substrate. The invention also includes a device structure resulting from the method.

Abstract: Resist developers can attack some advanced dielectric materials such as silsesquioxane materials which can be used as an insulator between a surface of an integrated circuit chip and wiring layers formed on the surface of the dielectric material. By performing a resist stripping or etching process in which a reactant material is supplied externally or liberated from the dielectric material, an extremely thin surface protective covering of an intermediate material may be formed which is impervious to resist developers or any of a plurality of other materials which may damage the flowable oxide material. A dual Damascene process for forming robust connections and vias to the chip can thus be made compatible with advanced dielectrics having particularly low dielectric constants to minimize conductor capacitance and support fast signal propagation and noise immunity even where conductors are closely spaced to each other.

Abstract: A microstructure comprises a conductive layer of aluminum, copper or alloys thereof on a substrate wherein the layer comprises metal grains at least about 0.1 microns and barrier material deposited in the grainboundaries of the surface of the metal is provided along with a method for its fabrication.

Abstract: A digital to analog converter which produces a non-return to zero output voltage. Two SIN DAC converters having return to zero (RZ) output voltages connected to provide a common NRZ output signal. The SIN DAC converters receive the digital signal and a delayed version of the digital signal. The reference sine voltage applied to each SIN DAC have a respective phase shift so that the outputs from each SIN DAC are phase shifted. The combined phase shifted output signals produce an NRZ signal with a reduced susceptibility to clock signal jitter, and which contain significantly less high frequency content than the RZ output signal from a SIN DAC.

Abstract: A continuous time delta-sigma analog to digital converter is disclosed. A summing junction receives an input analog signal to be digitized and a feedback signal. A loop filter receives the combined signals from the summing junction, and a course analog to digital converter converts the combined signal to a multi-bit digital number. A sin DAC provides a feedback signal to the summing junction, by reconverting the multi-bit digital signal to an analog signal. The sin DAC produces a linear output signal having a reduced phase jitter, resulting in a lower noise floor for the multi-digital signal. The sin DAC may be an NRZ sin DAC which avoids stringent linearity requirements on the summing junction.

Abstract: A device for creating at least one aligned marking on opposite sides of a semiconductor wafer including a front side and a back side. A wafer receiving support unit including at least a first wafer receiving slot in a first side wall thereof receives a wafer inserted therein. A template positions at least one aligned marking on each of the front side of the semiconductor wafer and on the backside of the semiconductor wafer.

Abstract: A process for fabricating a tapered trench on a silicon substrate. The process comprises the steps of forming an initial trench in the substrate and implanting nitrogen ions on the initial trench side walls. More nitrogen ions are implanted adjacent the exposed surface of the substrate than adjacent the trench bottom. Finally, the initial trench side walls are oxidized to create the tapered shape.

Abstract: A process for making a SOI region and a bulk region in a semiconductor device. The process includes providing a SOI structure. The SOI structure has a thin silicon layer, a buried insulating oxide layer underlying the thin silicon layer, and a silicon substrate underlying the buried insulating oxide layer. Next, a nitride layer is deposited on top of the SOI structure. The SOI structure is exposed by selectively etching portions of the nitride layer. The portion of the nitride layer which is not etched forms the SOI region. The silicon substrate is exposed by selectively etching the remaining portion of the exposed SOI structure. An epitaxial layer is grown on top of the exposed silicon substrate to form the bulk region. The nitride portion above the SOI structure is finally removed.

Abstract: A SOI field effect transistor structure providing ESD protection. The structure has a source, a drain, a body, and a gate. The gate is formed from a thick oxide layer and a metal contact. The gate s formed during the BEOL process. The transistor may by a p-type transistor or an n-type transistor. The transistor may have its drain tied to either the gate, the body, or both the gate and body. When used as a protection device, the drain is tied to a signal pad and the source is tied to a potential reference.

Abstract: A semiconductor memory device including an NVRAM cell structure, a DRAM cell structure and an SRAM cell structure. The NVRAM cell structure, the DRAM cell structure, and the SRAM cell structure are on the same semiconductor on insulator substrate. An NVRAM cell structure. Processes for forming a memory structure that includes NVRAM, DRAM, and/or SRAM memory structures on one semiconductor on insulator substrate and processes for forming a new NVRAM cell structure. Preferably, the semiconductor-on-insulator substrate is an SOI substrate, a silicon on glass substrate or a silicon on sapphire substrate, as appropriate for a particular application.

Abstract: A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At least one base contact overlies the at least one base region and is associated with each transistor. A plurality of the base contacts are common to at least two transistors in the array. At least one collector reach through is associated with each transistor. A collector reach through contact overlies each collector reach through. A buried layer subcollector region of electrically conducting material electrically connects the collector reach through region to the collector pedestal region of each transistor.

Abstract: A process for forming a silicon-germanium base of a heterojunction bipolar transistor. First, a silicon substrate having a mesa surrounded by a trench is formed. Next, a silicon-germanium layer is deposited on the substrate and the portion of the silicon-germanium layer adjacent the mesa is removed to form the silicon-germanium base. In a second embodiment, the process comprises the steps of forming a silicon substrate having a mesa surrounded by a trench, forming a dielectric layer in the trench adjacent the mesa, and growing a silicon-germanium layer on the mesa top surface using selective epitaxial growth to form the silicon-germanium base.

Abstract: A method for forming a structure. A first dielectric material is deposited on a substrate. The first dielectric material is patterned. At least one metal is deposited in and on the first dielectric material. Portions of the at least one metal are removed at least in a region above an upper surface of the first dielectric material. The first dielectric material is removed. A second dielectric material is provided in place of first dielectric material.

Abstract: High frequency performance of transistor designs is enhanced and manufacturing yield improved by removing and reducing sources of parasitic capacitance through combinations of processes from different technologies. After formation of collector, base and emitter regions on a substrate and attachment of a second substrate, the original substrate is wholly or partially removed, the inactive collector area is removed or rendered semi-insulating and wiring and contacts are made from the original back side of the chip. Dielectric material used in the manufacturing process can be removed to further reduce capacitance. The high frequency transistors can be bonded to CMOS chips or wafers to form BICMOS chips.

Abstract: A method for forming source/drain extensions with gate overlap. An oxide layer is formed on a semiconductor substrate and a gate structure on the semiconductor substrate. First, sidewall spacer regions are formed on sides of the gate structure. Second spacer regions are formed on sides of the sidewall spacer regions. Upper regions of the gate structure and the sidewall spacer regions are silicided. Portions of source and drain extension regions in the semiconductor substrate adjacent the gate structure are also silicided.

Abstract: An apparatus for monitoring and adding solution to a plating bath and controlling the quality of deposited metal. At least one monitor monitors at least one condition within a plating bath and produces at least one signal corresponding to the at least one condition. At least one controller receives the at least one signal produced by the at least one monitor, processes the at least one signal, determines whether an additional amount of at least one chemical should be added to the plating bath, and controls at least one valve for controlling flow of the additional amount of the at least one chemical. A pre-mix tank pre-mixes chemicals to be added to the tank. A plurality of holding tanks holds chemicals and supplies the chemicals to the pre-mix tank. At least one valve is arranged between each holding tank and the pre-mix tank. At least one valve is also arranged between the pre-mix tank and the plating bath.

Abstract: A planar silicon-on-insulator (SOI) structure and a process for fabricating the structure. The SOI structure has a silicon wafer, an oxide layer, and a silicon layer. Trenches are formed, extending from the top surface of the structure to the silicon wafer, and are filled with a semiconductor. The trenches have a top, a bottom, and side walls. The side walls have side-wall silicon portions. The side-wall silicon portions of the trench side walls are covered by trench side-wall oxide layers. A protective side wall extends over the trench side walls and trench side-wall oxide layers from the trench top to the trench bottom.