Abstract: There are provided efficient basis conversion matrices Dsd and Dds and a basis conversion method in a finite field GF(2n) using the basis conversion matrices for a case where a defining polynomial is a pentanomial, xn+xk(3)+xk(2)+xk(1)+1, and the exponents n, k(3), k(2), and (k1) satisfy the condition, n?k(3)>k(3)?k(1). In addition, an apparatus for the basis conversion in the finite field GF(2n) is provided. Since a pentanomial having a general form in an arbitrary degree is used as the defining polynomial, basis conversion between a standard representation and a dual representation is efficiently performed. Consequently, a dual basis multiplier can be efficiently implemented.

Abstract: In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a photoresist film formed on a substrate. An interfered light generated from the irradiated light is transmitted through other portions of the photoresist film except a ring-shaped portion of the photoresist film having a predetermined width along a boundary of the selected portion. The photoresist film is exposed using the interfered light and the light irradiated onto the selected portion. A cylindrical photoresist pattern having a minute width may be formed through developing the photoresist film. With the cylindrical pattern, the capacitor can be easily formed.

Abstract: An optical element may include a first diffractive structure having a radially symmetric amplitude function and a second diffractive structure having a phase function. The second diffractive structure may serve as a vortex lens. A system employing the optical element may include a light source and/or a detector.

Abstract: A monolithic ink-jet printhead, and a method of manufacturing the same, includes a substrate having an ink chamber, an ink channel, and a manifold, a nozzle plate formed on the substrate, a nozzle, a heater, and a conductor. The ink chamber includes sidewalls formed to a predetermined depth from the front surface of the substrate for defining side surfaces of the ink chamber and a bottom wall formed parallel to the front surface of the substrate at the predetermined depth from the front surface of the substrate for defining a bottom surface of the ink chamber. The nozzle plate includes a plurality of passivation layers, a heat dissipating layer being stacked on the passivation layers, and the nozzle for ejecting ink out of the printhead. The heater is positioned above the ink chamber and heats ink in the ink chamber and the conductor delivers a current to the heater.

Abstract: A method of forming an interconnection line in a semiconductor device includes forming an interlayer insulating layer on an underlying layer having a lower conductive layer, patterning the interlayer insulating layer to form an opening exposing the lower conductive layer, forming an additional material layer conformally on the underlying layer including the opening, anisotropically etching the additional material layer to form an opening spacer covering a sidewall of the opening, performing a wet etch process using the opening spacer as an etch mask, forming a conductive layer pattern in the opening, and performing a heat treatment on the opening spacer.

Abstract: In a MIM capacitor, and method of fabricating the same, the MIM capacitor includes an interlayer insulating layer on a semiconductor substrate, a lower metal interconnection and a lower metal electrode in the interlayer insulating layer, an intermetal dielectric layer covering the lower metal interconnection, the lower metal electrode, and the interlayer insulating layer, a via hole exposing the lower metal interconnection, an upper metal interconnection groove crossing over the via hole, at least one capacitor trench region exposing the lower metal electrode, an upper metal interconnection filling the upper metal interconnection groove, the upper metal interconnection being electrically connected to the lower metal interconnection through the via hole, a dielectric layer covering inner surfaces of the at least one capacitor trench region, and an upper metal electrode surrounded by the dielectric layer to fill the at least one capacitor trench region.

Abstract: A method of forming a hydrophobic coating layer on a surface of a nozzle plate for an ink-jet printhead includes preparing a nozzle plate having a nozzle, forming a metal layer on a surface of the nozzle plate, forming a material layer covering the metal layer, selectively etching the material layer to expose a portion of the metal layer formed on an outer surface of the nozzle plate, and forming the hydrophobic coating layer of a sulfur compound on the exposed portion of the metal layer by dipping the nozzle plate in a sulfur compound-containing solution.

Abstract: A system for issuing cyber payment means (cyber notes, cyber checks, cyber payment certificates, etc.) marked with business identification information, on a computer network, and a method thereof are provided.

Abstract: A method for fabricating a membrane-electrode assembly, and fuel cells adopting a membrane-electrode assembly formed by the method, wherein the method includes: coating nano-sized catalytic metal particles on a proton exchange polymer membrane by sputtering a catalytic metal source; coating nano-sized carbon particles on the proton exchange polymer membrane by arc discharging or by sputtering a carbon source to form a nanophase catalyst layer; and bonding electrodes to the proton exchange polymer membrane having the nanophase catalyst layer. The nano-sized catalytic metal and nano-sized carbon particles can be coated on a proton exchanger polymer membrane to form a catalyst layer by simultaneously sputtering a catalyst metal source and a carbon source.

Abstract: Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.

Abstract: A method of fabricating a semiconductor device including a high-k dielectric for as a gate insulating layer is provided. The method includes forming a high-k dielectric layer and a conductive layer on a substrate, dry etching a portion of the conductive layer, performing a process to increase a wet etch rate of a remaining portion of the conductive layer, and forming a conductive layer pattern by wet etching the remaining portion of the conductive layer after performing the plasma process or the ion implantation. The process to increase the wet etch rate of the conductive layer including a plasma process and/or an ion implantation on the remaining portion of the conductive layer.

Abstract: An optical shutter includes a cell having a transparent panel and a hydrophobic transparent insulation panel which are arranged to face each other, a transparent electrode formed on an outer surface of the hydrophobic transparent insulation panel, and an opaque droplet contained in the cell and contacting an inner surface of the hydrophobic transparent insulation panel, wherein the amount of light transmitted is adjusted by changing a contact angle of the opaque droplet with respect to the hydrophobic transparent insulation panel. The opaque droplet may be hydrophobic or hydrophilic. The contact angle of the opaque droplet may be changed by applying an electric field between the transparent electrode and the opaque droplet.

Abstract: A mobile communication apparatus including a base station and at least two mobile stations, having multiple antennas, respectively is provided. In the mobile communication apparatus, the base station restores from feedback signals transmitted from the mobile stations weight information determined in the mobile stations, generates from the restored weight information downlink control information ensuring maximum throughput to each of the mobile stations, and selects from among data of all of the mobile stations data of a desired mobile station(s) to be transmitted, based on the downlink control information. Each of each of the mobile stations has at least one mobile station antenna, the base station has at least two base station antennas, and the downlink control information includes mobile station selection information, an optimal basis matrix index, and optimal gain indices. As a result, nominal peak throughput in multi-antenna mobile communications can be efficiently achieved at low costs.

Abstract: In a non-volatile flash memory device, and a method of fabricating the same, the device includes a semiconductor substrate, a source region and a drain region disposed in the semiconductor substrate to be spaced apart from each other, a tunneling layer pattern, a charge trap layer pattern and a shielding layer pattern, which are sequentially stacked on the semiconductor substrate between the source region and the drain region, adjacent to the source region, a first channel region disposed in the semiconductor substrate below the tunneling layer pattern, a gate insulating layer disposed on the semiconductor substrate between the drain region and the first channel region, a second channel region disposed in the semiconductor substrate below the gate insulating layer, a concentration of the second channel region being different from that of the first channel region, and a gate electrode covering the shielding layer pattern and the gate insulating layer.

Abstract: A trench isolation method for a semiconductor device, wherein a capping layer formed of an insulating material fills a recess generated at a border edge between an active area and an inactive area. The border edge is defined by a trench filled with insulating material. Filling the recess suppresses defects of the semiconductor device. Reduction of the isolating ability, due to the formation of gate poly residue during the forming of a gate, is prevented. Reduction of the threshold voltage of a transistor, caused by electric field concentration due to the gate poly residue, is suppressed. An oxide layer is also provided which protects an nitride pad during a plasma process.

Abstract: A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.

Abstract: In a non-invasive body component measuring apparatus for measuring a concentration of a body component in a measuring portion of a living body, and a method of non-invasively measuring the concentration of the body component, the non-invasive body component measuring apparatus includes a light source unit for generating light of a predetermined wavelength and for applying the light onto the measuring portion, a detection unit for detecting light reflected or transmitted by the measuring portion and for converting the detected light into an electrical signal, a signal processing unit for processing the electrical signal, and a body-apparatus interface unit for fixing a periphery of the measuring portion during measurement.

Abstract: In a method of determining a regression model, and a method of predicting a component concentration of a test mixture using the regression model, the method of determining the regression model includes selecting a regression model, generating a plurality of observation points, each one of the plurality of observation points having a prediction target value and a measured value, determining a weight of the prediction target value and the measured value at each one of the plurality of observation points, and obtaining a calculation amount by reflecting the weights in differences between predicted values acquired by applying the measured values to the regression model and the prediction target values, and determining coefficients of the regression model to minimize the calculation amount.

Abstract: A nonvolatile semiconductor device includes trench isolation layers formed in a semiconductor substrate, each trench isolation layer having a protruding portion having a height that is higher than a height of a surface of the semiconductor substrate, a control gate electrode crossing an active region between the trench isolation layers, a floating gate disposed between the control gate electrode and the active region, a gate interlayer dielectric film disposed between the floating gate and the control gate electrode, and a tunnel oxide layer disposed between the floating gate and the active region, wherein the protruding portion of each trench isolation layer has a sidewall profile where a width of the protruding portion continuously tapers from a lower portion of the protruding portion to an upper portion of the protruding portion.

Abstract: A blood component measuring apparatus includes a fixing apparatus for fixing a body part of an examinee, the body part including a tissue to be examined, a light source portion for radiating light onto the tissue to be examined, the tissue to be examined covering the light source portion, a photodetector for detecting light passing through the tissue to be examined, the photodetector facing the light source portion, and an analyzer for analyzing the light detected by the photodetector, wherein the fixing apparatus includes first and second fixing members for fixing first and second portions of the body part, respectively, the first and second portions of the body part being connected to the tissue to be examined, wherein the first and second fixing members are operable to move depending on a location of the tissue to be examined.